CN111029447A - Sapphire planar epitaxial wafer for Micro-LED and growth method thereof - Google Patents
Sapphire planar epitaxial wafer for Micro-LED and growth method thereof Download PDFInfo
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- CN111029447A CN111029447A CN201911174891.1A CN201911174891A CN111029447A CN 111029447 A CN111029447 A CN 111029447A CN 201911174891 A CN201911174891 A CN 201911174891A CN 111029447 A CN111029447 A CN 111029447A
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- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 53
- 239000010980 sapphire Substances 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 230000000903 blocking effect Effects 0.000 claims abstract description 8
- 238000004544 sputter deposition Methods 0.000 claims description 12
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 8
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 57
- 235000012431 wafers Nutrition 0.000 description 30
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 3
- 238000005034 decoration Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention provides a sapphire planar epitaxial wafer for Micro-Led, which is used for growing the sapphire planar epitaxial wafer, wherein the sapphire planar epitaxial wafer sequentially comprises the following components from bottom to top: the GaN-based LED chip comprises a sapphire planar substrate, an AlN film layer, a uGaN layer, an nGaN layer, an InGaN stress modulation layer, an MQW layer, an electron blocking layer, a pGaN layer and an ohmic contact layer, wherein the thickness range of the AlN film layer is 7-25 nm. The method effectively improves the stability of the Micro-LED manufacturing stripping process and improves the yield.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a sapphire planar epitaxial wafer for Micro-Led and a growth method thereof.
Background
The Micro-Led thins, microminiaturizes and arrays the Led structure, reduces the size to about 1-10 microns, transfers the Led structure to a substrate in batches, completes the preparation of a protective layer and an electrode by using a physical deposition mode, and finally performs encapsulation. Compared with an OLED, the Micro-LED has higher brightness, higher luminous efficiency and lower power consumption, and can realize a more exquisite display effect. However, the size of the Micro-Led is small, the number of the transferred crystal grains in the chip manufacturing process can reach ten thousand or even hundreds of thousands, and the Micro-Led needs to be as thin as possible and needs to be completed by more fine operation to realize mass transfer. The laser stripping technology utilizes laser energy to decompose a GaN buffer layer at an interface between a GaN layer and a sapphire substrate, and separation of an LED epitaxial wafer and the sapphire substrate is achieved.
At present, an LED epitaxial wafer is generally obtained by means of epitaxial growth on a sapphire patterned substrate, the patterned substrate is provided with a pattern, the surface is uneven, the stress between the sapphire substrate and a GaN layer can be relieved, the subsequent stripping effect and the surface flatness are poor, and the defect is particularly obvious for small-size Micro-LED.
Disclosure of Invention
In order to solve the peeling problem of the sapphire patterned substrate epitaxial wafer, the invention provides a sapphire planar epitaxial wafer for Micro-Led and a growth method thereof, which effectively improve the technical problems of poor peeling stability and poor surface flatness of the existing growth method and ensure the crystal quality and warpage control of the epitaxial wafer.
The invention provides a technical scheme of a sapphire planar epitaxial wafer for Micro-Led, which comprises the following steps:
a sapphire planar epitaxial wafer for Micro-Led, comprising in order from bottom to top: the multilayer film comprises a Sapphire planar substrate (FSS), an AlN film layer, a uGaN layer, an nGaN layer, an InGaN stress modulation layer, an MQW layer, an electron blocking layer, a pGaN layer and an ohmic contact layer, wherein the AlN film layer has a thickness ranging from 7 nm to 25 nm.
The invention also provides a sapphire planar epitaxial wafer growth method for Micro-Led, which comprises the following steps:
placing a sapphire planar substrate in a PVD AlN sputtering machine, and sputtering an AlN film layer with a preset thickness on the surface of the sapphire planar substrate;
and placing the sapphire planar substrate sputtered with the AlN film in an MOCVD machine, and sequentially growing a uGaN layer, an nGaN layer, an InGaN stress modulation layer, an MQW layer, an electron blocking layer, a PGaN layer and an ohmic contact layer on the surface of the AlN film to obtain the sapphire planar epitaxial wafer.
According to the sapphire planar epitaxial wafer for Micro-LED and the growth method thereof, provided by the invention, the sapphire planar substrate is pretreated in the PVD AlN sputtering machine, the AlN film is obtained by sputtering, and then the sapphire planar substrate is placed in the MOCVD machine to grow the epitaxial wafer, so that the process stability of the MOCVD machine for growing the sapphire planar epitaxial wafer is effectively improved, the quality of double crystals and the wavelength distribution are greatly improved, and the epitaxial time is reduced. In addition, the technical problems of poor crystal quality and large substrate warpage which are easily caused when a GaN layer is directly grown on the surface of the sapphire plane substrate relative to a patterned substrate are effectively solved by sputtering the AlN film on the surface of the sapphire plane substrate.
Drawings
FIG. 1 is a schematic structural view of a sapphire planar epitaxial wafer for Micro-Led in the present invention;
FIG. 2 is a schematic structural diagram of a patterned sapphire substrate epitaxial wafer in the prior art;
FIG. 3 is a GAN (102) XRD contrast of a sapphire planar epitaxial wafer without and without an AlN plating film in example 2;
fig. 4 is a wavelength distribution diagram of the sapphire planar epitaxial wafer in example 2.
Description of reference numerals:
1-sapphire planar substrate, 2-AlN film layer, 3-uGaN layer, 4-nGaN layer, 5-InGaN stress modulation layer, 6-MQW layer, 7-electron barrier layer, 8-pGaN layer and 9-ohmic contact layer
Detailed Description
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following description will be made with reference to the accompanying drawings. It is obvious that the drawings in the following description are only some examples of the invention, and that for a person skilled in the art, other drawings and embodiments can be derived from them without inventive effort.
As shown in fig. 1, which is a schematic structural diagram of a sapphire planar epitaxial wafer for Micro-Led provided in the present invention, it can be seen that the sapphire planar epitaxial wafer sequentially includes, from bottom to top: the solar cell comprises a sapphire planar substrate 1, an AlN film layer 2, a uGaN layer 3, an nGaN layer 4, an InGaN stress modulation layer 5, an MQW layer 6, an electron blocking layer 7, a pGaN layer 8 and an ohmic contact layer 9, wherein the thickness range of the AlN film layer is 7-25 nm.
In the generation process, firstly, a sapphire planar substrate is placed in a PVD AlN sputtering machine, and an AlN film with a preset thickness is sputtered on the surface of the substrate; and then, placing the sapphire planar substrate sputtered with the AlN film in an MOCVD machine, and sequentially growing a uGaN layer, an nGaN layer, an InGaN stress modulation layer, an MQW layer, an electron blocking layer, a PGaN layer and an ohmic contact layer on the surface of the AlN film to obtain the sapphire planar epitaxial wafer.
In the process of growing epitaxial wafers in an MOCVD machine table, high-purity N is adopted2Or high purity H2Or high purity H2High purity N2The mixed gas of (2) is used as a carrier gas, high-purity NH3As the N source, metal organic sources trimethyl gallium (TMGa) and triethyl gallium (TEGa) as gallium sources, trimethyl indium (TMIn) as indium sources, and the N-type dopant is sapphire planalane (SiH)4) The p-type dopant is magnesium dicocene (Cp)2Mg)。
It should be understood that, compared with the conventional epitaxial wafer (as shown in fig. 2) grown by using a sapphire patterned substrate, the epitaxial wafer in the present invention is grown directly from a gan layer after sputtering an AlN film layer on the surface of a sapphire planar substrate, without a buffer layer and a three-dimensional coarsening layer, in addition to the used growth substrate.
Examples
1. Placing the sapphire planar substrate into a PVD AlN sputtering machine, sputtering an AlN film layer with the thickness of 7-25nm at the temperature of 600 ℃, and adjusting the distribution condition of the wavelength through different AlN film thicknesses;
2. and placing the sapphire planar substrate sputtered with the AlN film into a reaction chamber of an MOCVD machine table, heating to 1080-.
3. The temperature is raised to 1080-1100 ℃, the pressure is controlled at 100-200Torr, an nGaN layer with the thickness of 2.2-2.8 μm is grown, the TMGa flow is 500-650ml/min, SiH4The flow rate is 90-110ml/min, and the growth rotation speed is 1000-1200 r/min.
4. The temperature is reduced to 800-900 ℃, the pressure is controlled to 100-400Torr, and the InGaN stress modulation layer is grown, wherein the InGaN/GaN transition layer comprises 5-20 periods and the InGaN/GaN light-emitting layer comprises 7-9 periods, and the total thickness is about 0.25 μm. The TEGa flow is 240ml/min for 170-.
5. The temperature is reduced to 800-820 ℃, the pressure is controlled at 100-200Torr, an electron blocking layer with the diameter of 20-60nm is grown, the TMGa flow is 30-50ml/min, and the growth rotation speed is 1000-1200 r/min.
6. The temperature is raised to 950 ℃ and the pressure is controlled at 100 ℃ and 200Torr, a 70-110nm P-type GaN layer is grown, the TMGa flow is 20-40ml/min, and the growth rotation speed is 800 ℃ and 1000 r/min.
7. The temperature is increased to 970-990 ℃, the pressure is controlled at 100-200Torr, an ohmic contact layer with the thickness of 5-15nm is grown, the TMGa flow is 20-50ml/min, and the growth rotation speed is 800-1000 r/min. After the growth is finished, the temperature of the reaction chamber is reduced to 600-900 ℃, annealing treatment is carried out for 4-10min in the nitrogen atmosphere, then the temperature is gradually reduced to the room temperature, and the epitaxial growth is finished.
It was determined that after the substrate was grown by MOCVD, the menu time was 10% less than the graphical substrate menu. As shown in FIG. 3, the XRD contrast of GAN (102) of the sapphire planar epitaxial wafer without or without the AlN coating is shown, wherein curve a shows the XRD contrast of GAN (102) of the sapphire planar epitaxial wafer without the AlN coating, and curve b shows the XRD contrast of GAN (102) of the sapphire planar epitaxial wafer with the AlN coating in the present example. As can be seen, the XRD of GaN (102) coated with AlN film epitaxial wafer was increased from 550arcsec to about 250 arcsec. FIG. 4 shows the wavelength profile of the epitaxial wafer in this example, where the PL parameter wavelength STD of the epitaxial wafer is 1.6 and the AFM roughness is 0.6nm at 5 μm by 5 μm. The XRD and the wavelength STD are improved, and the production requirement is met.
It should be noted that the above embodiments can be freely combined as necessary. The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (3)
1. A sapphire planar epitaxial wafer for Micro-Led, comprising in order from bottom to top: the GaN-based LED chip comprises a sapphire planar substrate, an AlN film layer, a uGaN layer, an nGaN layer, an InGaN stress modulation layer, an MQW layer, an electron blocking layer, a pGaN layer and an ohmic contact layer, wherein the thickness range of the AlN film layer is 7-25 nm.
2. A sapphire planar epitaxial wafer growth method for Micro-LED is characterized by comprising the following steps:
placing a sapphire planar substrate in a PVD AlN sputtering machine, and sputtering an AlN film layer with a preset thickness on the surface of the sapphire planar substrate;
and placing the sapphire planar substrate sputtered with the AlN film in an MOCVD machine, and sequentially growing a uGaN layer, an nGaN layer, an InGaN stress modulation layer, an MQW layer, an electron blocking layer, a PGaN layer and an ohmic contact layer on the surface of the AlN film to obtain the sapphire planar epitaxial wafer.
3. The method according to claim 2, wherein the thickness of the sputtered AlN film layer in the PVD AlN sputtering station is 7-25 nm.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110147763A1 (en) * | 2008-08-06 | 2011-06-23 | Showa Denko K.K. | Group iii nitride semiconductor multilayer structure and production method thereof |
| CN108831978A (en) * | 2018-04-24 | 2018-11-16 | 华灿光电(苏州）有限公司 | A kind of LED epitaxial slice and its manufacturing method |
| CN109545919A (en) * | 2018-11-09 | 2019-03-29 | 西安电子科技大学 | The effective UV light emitting diode and preparation method of N-shaped AlGaN layer modulation doping |
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- 2019-11-26 CN CN201911174891.1A patent/CN111029447A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110147763A1 (en) * | 2008-08-06 | 2011-06-23 | Showa Denko K.K. | Group iii nitride semiconductor multilayer structure and production method thereof |
| CN108831978A (en) * | 2018-04-24 | 2018-11-16 | 华灿光电(苏州）有限公司 | A kind of LED epitaxial slice and its manufacturing method |
| CN109545919A (en) * | 2018-11-09 | 2019-03-29 | 西安电子科技大学 | The effective UV light emitting diode and preparation method of N-shaped AlGaN layer modulation doping |
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Application publication date: 20200417 |
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