CN111017861A - Capacitance-cantilever beam micro-type electric field measurement sensing device based on inverse piezoelectric effect - Google Patents
Capacitance-cantilever beam micro-type electric field measurement sensing device based on inverse piezoelectric effect Download PDFInfo
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- CN111017861A CN111017861A CN201910973278.XA CN201910973278A CN111017861A CN 111017861 A CN111017861 A CN 111017861A CN 201910973278 A CN201910973278 A CN 201910973278A CN 111017861 A CN111017861 A CN 111017861A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
- B81B3/0037—For increasing stroke, i.e. achieve large displacement of actuated parts
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/08—Measuring electromagnetic field characteristics
- G01R29/0864—Measuring electromagnetic field characteristics characterised by constructional or functional features
- G01R29/0878—Sensors; antennas; probes; detectors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0221—Variable capacitors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0118—Cantilevers
Abstract
A capacitance-cantilever beam micro-type electric field measurement sensing device based on inverse piezoelectric effect comprises a substrate, wherein the substrate can be made of glass, silicon and the like. The substrate is fixedly connected with one end of the semiconductor film, the semiconductor film covers the substrate, an upper electrode and a piezoelectric layer are arranged on the top surface of the semiconductor film, a rectangular cavity is arranged in the middle of the top surface of the substrate, a lower electrode is arranged inside the cavity, the piezoelectric layer is arranged along the edge of the cavity and is provided with a gap of a C-shaped structure, and the cavity is communicated with the external connection through the gap. The beneficial effects are as follows: the sensitivity of the device is improved, the measurement sensitivity and the response linearity are improved, the structure is compatible with a micro-machining mode, the device can be produced in large scale in industrialization, the temperature stability of the device is high, and the device is suitable for different electric field measurement environments.
Description
Technical Field
The invention relates to the field of electric field sensing, in particular to a piezoelectric effect-based capacitance-cantilever beam type miniature electric field sensing device which is high in sensitivity, low in cost and small in size and aims at space electric field measurement.
Background
The ubiquitous energy internet of things is an important development direction of the current energy and information industry. On the basis of an energy internet, a novel energy information interaction network is constructed through technologies such as wireless sensing and intelligent control in the ubiquitous energy internet of things, and optimization of energy economy is achieved. The sensor network is an important component of the ubiquitous energy Internet of things. Through the real-time collection and monitoring of data in the energy Internet of things, the sensor can provide a large amount of data, and through studying and analyzing the data, an information network supporting the ubiquitous energy Internet of things is constructed.
Voltage is one of the most important physical quantities in the power industry. The information contained in the voltage harmonic wave has important significance for power network fault prediction and diagnosis and operation state monitoring. In order to realize wide-area monitoring of node voltage in a power grid and consider the economical efficiency of measurement, a low-cost miniaturized measurement means must be used. According to a corresponding theory, the corresponding node voltage can be reversely deduced by measuring three or more electric fields, so that the miniaturized electric field measurement sensing device becomes an optimal solution for network voltage monitoring.
The measurement of the electric field in the network has the following requirements: the measuring equipment has small volume and low cost; the measurement needs to be a non-contact measurement; the measurement resolution and sensitivity are high; the measuring device should have a certain stability under different circumstances. At present, the micro electric field sensing device mainly includes an optical sensor based on an electro-optical effect, a MEMS sensing device based on a micro electro mechanical system, a sensing device based on an electrostatic force, and a sensing device based on an inverse piezoelectric effect. The optical electric field sensing device is high in equipment cost, the laser source and the laser measuring device occupy large volume, and meanwhile, the temperature stability is poor. MEMS-based electric field sensors have the advantage of miniaturization, but such sensors generally consume high power and measure low electric fields. The sensor based on the inverse piezoelectric effect has the advantages of low cost, high stability, high measurement linearity and the like, and can meet the monitoring requirements of voltage/electric fields in the ubiquitous energy Internet of things.
Disclosure of Invention
The purpose of the invention is as follows:
the capacitance-cantilever beam type electric field measurement sensing device based on the inverse piezoelectric effect is provided, and an electric field is measured through the capacitance change of the measurement device under the electric field.
In order to achieve the above purpose, the design idea of the invention is as follows:
the inverse piezoelectric effect is a phenomenon that a piezoelectric material is deformed under the action of an electric field. By means of the piezoelectric material, measurements of the electric field can be converted into measurements of mechanical deformations. The piezoelectric material has the characteristics of high stability, wide working frequency band and the like, and is widely applied to the field of sensors.
The cantilever beam structure is widely applied to the sensor, the cantilever beam with a double-layer structure is provided with an active layer and a passive layer, and when the active layer is transversely deformed, the passive layer coupled with the active layer can be driven to longitudinally bend due to mechanical coupling. Under the condition that the active layer is deformed identically, the cantilever beam structure can enable the passive layer to be bent greatly, and therefore sensitivity of the sensing device is improved.
The piezoelectric material is set as an active layer, and the semiconductor film is set as a passive layer. The piezoelectric material can deform under the action of an electric field, and then the cantilever beam structure is driven to longitudinally bend. Capacitance measurement is a widely used measurement means in sensing devices and has the advantages of high sensitivity and good linearity. The bending of the cantilever beam can be converted into the change of the capacitance, and the electric field is reversely pushed through the change of the capacitance.
Based on the purpose and design thought, the capacitance-cantilever beam micro-type electric field measurement sensing device based on the inverse piezoelectric effect is designed:
a capacitance-cantilever beam micro-type electric field measurement sensing device based on inverse piezoelectric effect comprises a substrate, wherein the substrate can be made of glass, silicon and the like. The substrate is fixedly connected with one end of the semiconductor film, the semiconductor film covers the substrate, an upper electrode and a piezoelectric layer are arranged on the top surface of the semiconductor film, a rectangular cavity is arranged in the middle of the top surface of the substrate, a lower electrode is arranged inside the cavity, the piezoelectric layer is arranged along the edge of the cavity and is provided with a gap of a C-shaped structure, and the cavity is communicated with the external connection through the gap.
The piezoelectric layer comprises a semiconductor material with a large piezoelectric coefficient in the in-plane direction, the upper electrode is embedded in the piezoelectric layer, the piezoelectric layer preferably comprises polyvinylidene fluoride (PVDF) and a copolymer thereof prepared by a spin coating method and lead zirconate titanate (PZT) prepared by a sol-gel method, the thickness of the piezoelectric film is adjusted according to the size of a device, and the adjustment range is 10-100 um.
The semiconductor film is a rectangular sheet structure formed by silicon materials in consideration of process feasibility, preferably is a high-doped silicon material, the semiconductor film needs to have better conductivity because the semiconductor film needs to be used as one electrode of a capacitor to be measured, when silicon is selected as the film material, high-doped silicon needs to be selected to ensure lower resistivity of the material, and in consideration of the sensitivity problem of coupling of two layers of films, the thickness of the semiconductor film is close to that of the piezoelectric film.
The semiconductor film, the upper electrode and the piezoelectric layer above the cavity integrally form a cantilever, in order to obtain higher sensitivity, the direction of the cantilever beam should be along the direction with higher piezoelectric coefficient in the piezoelectric material surface, the cavity ensures that the cantilever beam can freely vibrate, and an insulating layer is arranged between the lower electrode and the substrate to prevent the substrate from being conducted with the metal layer.
The horizontal area of the semiconductor film is coupled with the substrate, an insulating layer is arranged between the semiconductor film and the substrate, and the insulating layer is used for preventing the substrate from being conducted with the semiconductor film.
The capacitance-cantilever beam micro-type electric field measurement sensing device based on the inverse piezoelectric effect obtained by the technical scheme of the invention has the beneficial effects that:
the piezoelectric material is used as an active layer and deforms under an electric field due to inverse piezoelectric effect, so that the passive layer is driven to bend, an electric field signal is converted into a mechanical signal, the mechanical deformation of the piezoelectric material is amplified by using a cantilever beam structure, and the sensitivity of a device is improved.
Mechanical deformation is measured by measuring the capacitance, and the deformation of the piezoelectric material is influenced by the size of the electric field, so that the bending size of the cantilever beam is influenced, and the distance between an upper polar plate and a lower polar plate of the capacitance is changed. The measurement sensitivity and the response linearity can be improved by measuring the micro deformation by using the capacitor.
The measuring method is non-contact, so the influence on electric field distortion is small, and the requirement on the insulation level is low. Meanwhile, the device has small volume and low cost, and is suitable for being mounted on equipment and lines in large quantity. The structure is compatible with a micro-processing mode, and industrial mass production can be carried out.
The device has high temperature stability and is suitable for different electric field measurement environments.
Drawings
FIG. 1 is a schematic structural diagram of a capacitance-cantilever beam micro-type electric field measurement sensing device based on inverse piezoelectric effect according to the present invention;
FIG. 2 is a schematic cross-sectional structure along the A-A direction of the capacitance-cantilever beam micro-type electric field measurement sensing device based on the inverse piezoelectric effect;
FIG. 3 is a response schematic diagram of the capacitance-cantilever beam micro-type electric field measurement sensing device based on the inverse piezoelectric effect under an electric field.
1. A substrate; 2. a semiconductor thin film; 3. an upper electrode; 4. a piezoelectric layer; 5. a cavity; 6. a lower electrode; 7. a gap; 8. an insulating layer;
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings.
FIG. 1 is a schematic structural diagram of a capacitance-cantilever beam micro-type electric field measurement sensing device based on inverse piezoelectric effect according to the present invention; fig. 2 is a schematic sectional structure view in the a-a direction of the capacitive-cantilever micro-type electric field measurement sensor device based on the inverse piezoelectric effect of the present invention, as shown in fig. 1 and 2, the capacitive-cantilever micro-type electric field measurement sensor device based on the inverse piezoelectric effect includes a substrate 1, and the substrate may be made of glass, silicon, or other materials. The substrate is connected fixedly with semiconductor film one end, substrate 1 coats and is stamped semiconductor film 2, the top surface of semiconductor film 2 is equipped with upper electrode 3, piezoelectric layer 4, the top surface middle part of substrate 1 is equipped with the cavity 5 of rectangle, the cavity is inside to be equipped with bottom electrode 6, piezoelectric layer 4 is followed the edge of cavity 5 is equipped with the gap 7 of "C" shape structure, cavity 5 passes through gap 7 and external intercommunication.
The piezoelectric layer 4 comprises a semiconductor material with a large piezoelectric coefficient in the in-plane direction, the upper electrode 3 is embedded in the piezoelectric layer 4, the piezoelectric layer preferably comprises polyvinylidene fluoride (PVDF) and a copolymer thereof prepared by a spin coating method and lead zirconate titanate (PZT) prepared by a sol-gel method, the thickness of the piezoelectric film 2 is adjusted according to the size of a device, and the adjusting range is 10-100 um.
The semiconductor film 2 is a rectangular sheet structure formed by silicon materials in consideration of process feasibility, preferably high-doped silicon materials, and has better conductivity because the semiconductor film 2 needs to be used as an electrode of a capacitor to be tested.
The semiconductor film 2, the upper electrode 3 and the piezoelectric layer 4 above the cavity 5 integrally form a cantilever, in order to obtain higher sensitivity, the direction of the cantilever beam should be along the direction with higher piezoelectric coefficient in the piezoelectric material plane, the cavity ensures that the cantilever beam can freely vibrate, and an insulating layer 8 is arranged between the lower electrode 6 and the substrate 1 to prevent the substrate from being conducted with the metal layer.
The horizontal area of the semiconductor film 2 is coupled with the substrate 1, an insulating layer 8 is arranged between the semiconductor film 2 and the substrate 1, and the insulating layer is used for preventing the substrate 1 and the semiconductor film 2 from being conducted.
Example 1
Fig. 3 is a schematic diagram of the response of the capacitance-cantilever beam micro-type electric field measurement sensing device based on the inverse piezoelectric effect under an electric field, and as shown in fig. 3, a capacitance upper electrode and a capacitance lower electrode are connected with external measurement equipment through routing. The external measuring equipment can use a B1500A semiconductor parameter tester or an HP4284 dielectric spectrometer and the like.
The electric field measurement sensing device utilizes the inverse piezoelectric effect of the piezoelectric material to lead the piezoelectric material to deform under an electric field and drive the semiconductor film cantilever beam to longitudinally bend. The bending of the cantilever beam is converted into a change in capacitance.
The device has high sensitivity and temperature stability, has a wide electric field measurement range, and can meet electric field measurement requirements under different conditions in electrical equipment and a power grid. Meanwhile, the device is small in size and low in cost, is suitable for micromachining technology, can be prepared in a large scale at low cost by using micromachining processes such as photoetching and etching on the basis of wafers, and can meet the requirement of ubiquitous energy Internet of things on voltage/electric field measurement.
The technical solutions described above only represent the preferred technical solutions of the present invention, and some possible modifications to some parts of the technical solutions by those skilled in the art all represent the principles of the present invention, and fall within the protection scope of the present invention.
Claims (5)
1. The capacitance-cantilever beam micro-type electric field measurement sensing device based on the inverse piezoelectric effect comprises a substrate (1) and is characterized in that a semiconductor film (2) covers the substrate (1), an upper electrode (3) and a piezoelectric layer (4) are arranged on the top surface of the semiconductor film (2), a cavity (5) is arranged in the middle of the top surface of the substrate (1), a lower electrode (6) is arranged inside the cavity, and a gap (7) is formed in the piezoelectric layer (4) along the edge of the cavity (5).
2. The inverse piezoelectric effect-based capacitive-cantilever micro-pattern electric field measurement sensing device according to claim 1, wherein the piezoelectric layer (4) comprises a semiconductor material with a large in-plane piezoelectric coefficient, and the upper electrode (3) is embedded in the piezoelectric layer (4).
3. The inverse piezoelectric effect-based capacitive-cantilever micro-type electric field measurement sensing device according to claim 1, wherein the semiconductor thin film (2) is a rectangular sheet structure made of silicon material, preferably a highly doped silicon material.
4. The capacitive-cantilever micro-type electric field measurement sensing device based on the inverse piezoelectric effect as claimed in claim 1, wherein the semiconductor thin film (2), the upper electrode (3) and the piezoelectric layer (4) above the cavity (5) integrally form a cantilever, and an insulating layer (8) is disposed between the lower electrode (6) and the substrate (1).
5. The inverse piezoelectric effect-based capacitive-cantilever micro-type E-field measurement sensor device according to claim 1, wherein the horizontal area of the semiconductor thin film (2) is coupled to the substrate (1), and an insulating layer (8) is provided between the semiconductor thin film (2) and the substrate (1).
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| CN201910973278.XA CN111017861A (en) | 2019-10-14 | 2019-10-14 | Capacitance-cantilever beam micro-type electric field measurement sensing device based on inverse piezoelectric effect |
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| CN201910973278.XA CN111017861A (en) | 2019-10-14 | 2019-10-14 | Capacitance-cantilever beam micro-type electric field measurement sensing device based on inverse piezoelectric effect |
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Cited By (2)
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| CN114384335A (en) * | 2021-12-03 | 2022-04-22 | 深圳市中明科技股份有限公司 | Electrostatic field detection sensor |
| CN116500349A (en) * | 2023-06-28 | 2023-07-28 | 西安交通大学 | Piezoelectric capacitance type MEMS electric field sensor |
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| CN116500349A (en) * | 2023-06-28 | 2023-07-28 | 西安交通大学 | Piezoelectric capacitance type MEMS electric field sensor |
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