CN111010112A - Resonator, filter and electronic device with partially filled gap of step structure - Google Patents
Resonator, filter and electronic device with partially filled gap of step structure Download PDFInfo
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- CN111010112A CN111010112A CN201910480623.6A CN201910480623A CN111010112A CN 111010112 A CN111010112 A CN 111010112A CN 201910480623 A CN201910480623 A CN 201910480623A CN 111010112 A CN111010112 A CN 111010112A
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Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02047—Treatment of substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention relates to a bulk acoustic wave resonator comprising: a substrate; an acoustic mirror; a bottom electrode disposed over the substrate; a top electrode facing the bottom electrode and having an electrode connection portion; and a piezoelectric layer disposed over the bottom electrode and between the bottom electrode and the top electrode, wherein: the edge of the top electrode is provided with a suspension wing structure and/or a bridge structure, and a gap is arranged below the suspension wing structure and/or the bridge structure; the resonator also includes a fill layer that fills only a portion of the void. The invention also relates to a filter having the bulk acoustic wave resonator, and an electronic device having the filter.
Description
Technical Field
Embodiments of the present invention relate to the field of semiconductors, and in particular, to a bulk acoustic wave resonator, a filter having the resonator, and an electronic device having the filter.
Background
The film bulk wave resonator made by using the longitudinal resonance of the piezoelectric film in the thickness direction becomes a feasible substitute for a surface acoustic wave device and a quartz crystal resonator in the aspects of mobile phone communication, high-speed serial data application and the like. The RF front-end bulk wave filter/duplexer provides superior filtering characteristics, such as low insertion loss, steep transition band, large power capability, and strong anti-electrostatic discharge (ESD) capability. The high-frequency film bulk wave oscillator with ultralow frequency temperature drift has the advantages of low phase noise, low power consumption and wide bandwidth modulation range. In addition, these micro thin-film resonators use CMOS compatible processes on silicon substrates, which can reduce unit cost and facilitate eventual integration with CMOS circuitry.
Bulk wave resonators comprise an acoustic mirror and two electrodes, and a layer of piezoelectric material, called piezoelectric excitation, located between the electrodes. Also called bottom and top electrodes are excitation electrodes, whose function is to cause mechanical oscillations of the layers of the resonator. The acoustic mirror forms an acoustic isolation between the bulk wave resonator and the substrate to prevent the acoustic waves from propagating out of the resonator, causing energy loss.
Ideally, the energy of the alternating electrical signal applied to the top and bottom electrodes is only singly converted into acoustic energy in a longitudinal vibration mode (also commonly referred to as a piston mode) of the piezoelectric layer. In practical cases, however, a transverse vibration mode of sound wave is generated along with a longitudinal vibration mode, and the existence of the transverse mode wave can weaken the energy of the piston mode sound wave, so that key performance parameters of the device, such as quality factor (Q) and effective electromechanical coupling coefficient (k), are influenced2 t,eff) Causing severe deterioration. At the same time, the performance of the filter constructed from bulk acoustic wave resonators is also degraded.
In the conventional bulk acoustic wave resonator, a suspended wing structure is provided at the edge of the top electrode, and the suspended wing structure helps to suppress acoustic waves of lateral vibration modes.
Fig. 1 is a schematic top view of a prior art film bulk acoustic resonator, fig. 2 is a schematic cross-sectional view of a prior art resonator based on section 1B-1B in fig. 1, and fig. 3 is a schematic cross-sectional view of another prior art resonator based on section 1B-1B in fig. 1. In fig. 1 to 3, the bulk acoustic wave resonator includes a substrate 101, an acoustic mirror 103, a first electrode 105, a piezoelectric layer 107, a second electrode 109, a single step structure (or a suspended wing structure) 113, a protrusion structure 115, and a void 111. The voids 111 may be air or completely filled with a dielectric material.
However, in real applications, there is still a need to further suppress the sound wave in the transverse vibration mode to increase the parallel resonance impedance Rp of the resonator, thereby increasing the Q value of the resonator.
Disclosure of Invention
The present invention has been made to mitigate or solve at least one of the above-mentioned problems in the prior art.
According to an aspect of an embodiment of the present invention, there is provided a bulk acoustic wave resonator including:
a substrate;
an acoustic mirror;
a bottom electrode disposed over the substrate;
a top electrode facing the bottom electrode and having an electrode connection portion; and
a piezoelectric layer disposed above the bottom electrode and between the bottom electrode and the top electrode,
wherein:
the edge of the top electrode is provided with a suspension wing structure and/or a bridge structure, and a gap is arranged below the suspension wing structure and/or the bridge structure;
the resonator also includes a fill layer that fills only a portion of the void.
Optionally, the filler layer fills a portion of the void below the suspension wing structure or the bridge structure.
Optionally, the edge of the top electrode is provided with a suspension wing structure and a bridge structure; the filler layer fills a portion of the void below the suspension wing structure and the bridge structure.
Optionally, the filling layer is formed of a dielectric material.
Optionally, the filling layer fills an inner portion of the void; or the filling layer fills a middle portion of the void.
Optionally, a value range of a ratio r of the width of the filling layer to the width of the gap is as follows: 0.2< r < 1. Further, a ratio r of the width of the filling layer to the width of the void is in a range of 0.25 to 0.75, and optionally, a ratio of the width of the filling layer to the width of the void is in a range of 0.4 to 0.6.
Optionally, the resonator further comprises a protruding structure on an upper side of the suspension wing structure and/or the bridge structure. Further, the protrusion structure has a base protrusion in contact with the top electrode and an extension extending over the cantilever structure and/or the bridge structure. Further, the width of the base protrusion is in the range of 0.2 μm to 10 μm, and further, in the range of 0.75 μm to 6 μm.
Optionally, the resonator further comprises a protruding structure located below the suspension wing structure and/or the bridge structure, the gap being formed below the protruding structure.
Optionally, the suspension wing structure is a multi-step structure, and/or the inner side of the bridge structure is a multi-step structure, the gap is formed below the multi-step structure, and the gap is a step gap. Further optionally, the filling layer fills the innermost level voids.
Optionally, the multi-step structure includes a first step connected to the top electrode and a second step connected to the first step. Optionally, the first step has a gap height of 50A-500A. Optionally, the second step has a gap height of 500A-4000A. Optionally, the width of the first step is 0.2-7 μm, and the width of the second step is 0.2-7 μm.
Optionally, the resonator comprises a protruding structure disposed above the multi-step structure.
Optionally, the resonator includes a protruding structure disposed below the multi-step structure.
According to another aspect of embodiments of the present invention, there is provided a filter including the bulk acoustic wave resonator described above.
According to a further aspect of embodiments of the present invention, there is provided an electronic device including the above-described filter.
Drawings
These and other features and advantages of the various embodiments of the disclosed invention will be better understood from the following description taken in conjunction with the accompanying drawings, in which like reference characters designate like parts throughout, and in which:
FIG. 1 is a schematic top view of a prior art film bulk acoustic resonator;
FIG. 2 is a schematic cross-sectional view of a prior art resonator based on 1B-1B of FIG. 1;
FIG. 3 is a schematic cross-sectional view of another prior art resonator based on 1B-1B of FIG. 1;
figure 4 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention;
FIG. 5 is a schematic cross-sectional view of the bulk acoustic wave resonator taken along line 2B-2B in FIG. 4, in accordance with an exemplary embodiment of the present invention;
FIG. 6 is an enlarged fragmentary view of the airfoil portion of FIG. 5;
fig. 7 is a graph exemplarily showing a relationship between a ratio of a void filling width to an overall void width and an Rp value of a resonator and a base width of a protrusion structure in the structure of fig. 6;
fig. 8 is a graph exemplarily showing a relationship between a ratio of a void filling width to an overall width of a void and an Rp value of a resonator in the structure in fig. 6 in a case where a base width of a protrusion structure is not changed (is 1 μm);
figure 9 is a cross-sectional schematic view of a bulk acoustic wave resonator taken along line 2B-2B in figure 4, in accordance with another exemplary embodiment of the present invention;
fig. 10 is a schematic sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, in which a filling part is provided in a middle portion of a void;
figure 11 is a schematic top view of a bulk acoustic wave resonator according to yet another exemplary embodiment of the present invention;
figure 12 is a cross-sectional schematic view of the bulk acoustic wave resonator taken along line 3B-3B of figure 11 with the bump structure over the suspension wing structure, in accordance with an exemplary embodiment of the present invention;
figure 13 is a cross-sectional schematic view of the bulk acoustic wave resonator taken along line 3B-3B of figure 11 with the bump structure under the suspension wing structure, in accordance with an exemplary embodiment of the present invention;
fig. 14 is a schematic partial cross-sectional view of a two-step cantilever structure of a top electrode of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention;
figure 15 is a schematic top view of a bulk acoustic wave resonator according to yet another exemplary embodiment of the present invention;
figure 16 is a cross-sectional schematic view of the bulk acoustic wave resonator taken along line 4B-4B of figure 15 with the bump structure over the bridge structure, in accordance with an exemplary embodiment of the present invention;
figure 17 is a cross-sectional schematic view of the bulk acoustic wave resonator taken along line 4B-4B of figure 15 with the bump structure under the bridge structure, in accordance with an exemplary embodiment of the present invention;
figure 18 is a schematic top view of a bulk acoustic wave resonator according to yet another exemplary embodiment of the present invention;
fig. 19 is a schematic cross-sectional view of the bulk acoustic wave resonator taken along line 5B-5B in fig. 18 with the bump structure over the suspension wing structure and the bridge structure, in accordance with an exemplary embodiment of the present invention;
fig. 20 is a schematic cross-sectional view of the bulk acoustic wave resonator taken along line 5B-5B in fig. 18 with the bump structure under the suspension wing structure and the bridge structure, according to an exemplary embodiment of the present invention.
Detailed Description
The technical scheme of the invention is further specifically described by the following embodiments and the accompanying drawings. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention and should not be construed as limiting the invention.
A bulk acoustic wave resonator according to an embodiment of the present invention is described below with reference to fig. 4 to 10.
Figure 4 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention. Figure 5 is a schematic cross-sectional view of a bulk acoustic wave resonator taken along line 2B-2B in figure 4, in accordance with an exemplary embodiment of the present invention. Fig. 6 is a partially enlarged view of the overhanging portion of fig. 5.
In fig. 4 to 6, the bulk acoustic wave resonator includes a substrate 201, an acoustic mirror 203, a first electrode 205, a piezoelectric layer 207, a second electrode 209, a single step structure (or a suspended wing structure) 213, a protrusion structure 215, a void portion 211, and a filling portion 217.
In the example of fig. 4-6, the single step structure 213 includes a fill portion 217 and a void portion 211 below. In other words, in the present invention, the void under the step structure is not completely filled with the filling portion.
As shown in fig. 5-6, the protrusion structure 215 has a base protrusion (region W1 in fig. 6) contacting the top electrode and an extension (region W in fig. 6) extending over the suspension wing structure.
In an alternative embodiment, the width of the base protrusions is in the range of 0.2 μm to 10 μm, such as 0.5 μm, 1 μm, 1.5 μm and 10 μm, and further, in the range of 0.75 μm to 6 μm, and may be, for example, 1 μm, in addition to being an endpoint value.
As shown in fig. 6, h is a distance between the single step 213 and the piezoelectric layer 207, W is a width of the single step structure 213 (a gap width corresponding to the entire gap formed by the single step structure), W1 is a width of a portion (base protrusion) of the convex structure 215 located only on the second electrode 209, and W2 is a width of the filling portion 217.
Fig. 7 is a graph exemplarily showing a relationship between a ratio of a void filling width to an overall width of a void and an Rp value of a resonator and a base width of a protrusion structure in the structure of fig. 6. R in fig. 7 is defined as W2/W, i.e., the ratio of the filled portion to the entire gap width. The simulation was performed for different filling ratios, and the parallel resonant impedance Rp was varied with W1 as shown in fig. 7, with h being 1000A and W being 1 um. It can be seen that with partial filling, the parallel resonant impedance Rp is better than without filling. When W1 takes a certain range, partial filling is more effective than full filling.
Fig. 8 is a graph exemplarily showing a relationship between a ratio of a void filling width to an overall width of a void and an Rp value of a resonator in the structure in fig. 6 in a case where a base width of the protrusion structure is not changed (is 1 μm). In fig. 8, setting W1 to 1um, i.e., region a in fig. 8, the parallel resonant impedance Rp varies with r as shown in fig. 8.
As shown in fig. 8, when r is 0.5, i.e., half filled, Rp is 4534.1, which is an increase of about 472.2 (about 12%) compared to no filling. An increase of about 296.4 (about 7%) compared to full fill. The value of r can range from 0.2< r < 1.
Fig. 9 is a schematic cross-sectional view of a bulk acoustic wave resonator taken along line 2B-2B in fig. 4, according to another exemplary embodiment of the present invention. As shown in fig. 9, the protrusion 215 is disposed under the single-step structure 213, and the filling portion 217 fills a portion of the gap.
In the above embodiments, the filling layers each fill the innermost side of the void, but the present invention is not limited thereto, and in the present invention, the filling layer may be provided outside the void, and may also be provided in the middle portion of the void (i.e., there is a void on both sides of the filling layer). Fig. 10 is a schematic sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, in which a filling part is provided in a middle portion of a void. The reference numerals in fig. 10 are the same as those in fig. 5. Fig. 11 is a schematic top view, fig. 12 is a schematic cross-sectional view of a bulk acoustic wave resonator according to still another exemplary embodiment of the present invention, taken along the line 3B-3B in fig. 11, with a protrusion structure above a suspension wing structure, and fig. 13 is a schematic cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, taken along the line 3B-3B in fig. 11, with a protrusion structure below a suspension wing structure.
In fig. 11 to 13, the bulk acoustic wave resonator includes a substrate 301, an acoustic mirror 303, a first electrode 305, a piezoelectric layer 307, a second electrode 309, a two-step structure (or a suspended wing structure) 313, a protrusion structure 315, a void portion 311, and a filling portion 317.
The embodiment shown in fig. 11-13 differs from the embodiment of fig. 4-10 in that in fig. 11-13 the cantilevered configuration of the top electrode is a two-step configuration, rather than the single-step configuration of the previous embodiment.
Fig. 14 is a partial cross-sectional view of a double-step suspended wing structure of a top electrode of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention. In fig. 14, 307 is a piezoelectric layer, 309 is a top electrode, and 311 is a void. Referring to fig. 14, the first step 313a has a clearance height h1 of 50A-500A, which may be 200A in addition to the aforementioned end points; the second step 313b may have a clearance height h2 of 500A-4000A, for example 500A, 2000A or 4000A. In FIG. 14, the width W1 of the first step is 0.2-7 μm, and the width W2 of the second step is 0.2-7 μm, for example, both may be 5 μm.
Referring to fig. 12 and 14, the fill layer 317 fills the innermost level voids. It is to be noted here that, in the case where a projecting structure is provided inside the suspension wing structure or the bridge structure mentioned later, the level gap is a level gap below the projecting structure.
It is also to be noted that, in the present invention, the void below the suspension wing structure and/or the bridge structure refers to a void below the suspension wing structure and/or the bridge structure (including the case where the projection structure is provided) which is not filled with the filling layer in the present invention. As for the width of the gap, whether for the bridge structure or the suspended wing structure, the width of the portion of the gap that falls within the effective area of the resonator in the thickness direction of the resonator.
It should be noted that, in the present invention, the side close to the effective area of the resonator is the inner side, and vice versa.
It should be noted that in fig. 12-14, the projection structure may also cover only a portion of the flap structure.
Figure 15 is a schematic top view of a bulk acoustic wave resonator according to yet another exemplary embodiment of the present invention;
fig. 16 is a schematic cross-sectional view of the bulk acoustic wave resonator taken along line 4B-4B in fig. 15 with the bump structure 416 above the bridge structure 414, in accordance with an exemplary embodiment of the present invention; fig. 17 is a schematic cross-sectional view of the bulk acoustic wave resonator taken along line 4B-4B in fig. 15, wherein a protrusion structure 416 is under a bridge structure 414, and the bridge structure in fig. 17 has a multi-step structure, according to an exemplary embodiment of the present invention.
In fig. 15 to 17, the bulk acoustic wave resonator includes a substrate 401, an acoustic mirror 403, a first electrode 405, a piezoelectric layer 407, a second electrode 409, a bridge structure 414, a protrusion structure 416, a void portion 412, and a filling portion 418.
Referring to fig. 16 and 17, the fill layer 418 fills the innermost portion of the void.
It is noted that in fig. 16-17, the projection structure may also cover only a portion of the bridge structure.
Figure 18 is a schematic top view of a bulk acoustic wave resonator according to yet another exemplary embodiment of the present invention;
fig. 19 is a schematic cross-sectional view of the bulk acoustic wave resonator taken along line 5B-5B in fig. 18 with the bump structure over the suspension wing structure and the bridge structure, in accordance with an exemplary embodiment of the present invention; fig. 18 is a schematic cross-sectional view of the bulk acoustic wave resonator taken along line 5B-5B in fig. 18 with the bump structure under the suspension wing structure and the bridge structure, according to an exemplary embodiment of the present invention.
In fig. 18 to 20, the bulk acoustic wave resonator includes a substrate 501, an acoustic mirror 503, a first electrode 505, a piezoelectric layer 507, a second electrode 509, a suspended wing structure 513, a bridge structure 514, a protrusion structure 515, a protrusion structure 516, a void portion 511, a void portion 512, a filling portion 517, and a filling portion 518.
In fig. 19, the bridge structure and the suspension wing structure are both single step structures. In fig. 20, both the bridge structure and the suspension wing structure are multi-step structures. As can be appreciated by those skilled in the art, one of the bridge structure and the suspension wing structure may be a multi-step structure.
Referring to fig. 19 and 20, the fill layer fills the innermost portion of the void.
It is also to be noted that although in the above embodiments, the filling layers each fill the innermost side of the void, the present invention is not limited thereto, and in the present invention, the filling layer may be provided outside the void, and may also be provided in the middle portion of the void (i.e., with a void on both sides of the filling layer).
It should be noted that, in the embodiments of the present invention, although the thin film bulk acoustic resonator is taken as an example for description, the description may be applied to other types of bulk acoustic resonators.
In the present invention, the respective components and materials are described as follows:
the top electrode and the bottom electrode are made of metal materials, and the materials can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or the compound of the metals or the alloy of the metals.
The filling part can be made of non-metal dielectric materials, such as: silicon dioxide, silicon nitride, silicon carbide, aluminum nitride, magnesium oxide, aluminum oxide, or other metal oxides or nitrides or polymers, and the like.
Passivation layer: this layer is an optional protective layer that prevents moisture, oxygen, or other foreign matter from attacking the resonator. The protective layer may be made of non-metal materials such as silicon dioxide, silicon nitride, silicon carbide, aluminum nitride, magnesium oxide, aluminum oxide, or other metal oxides, nitrides, polymers, etc.
A piezoelectric layer: aluminum nitride, doped aluminum nitride, zinc oxide, lead zirconate titanate, lithium niobate, quartz, potassium niobate or lithium tantalate, wherein the doped ALN at least contains one rare earth element, such as scandium, yttrium, lanthanum, erbium, ytterbium and the like.
Based on the above, the present invention provides a bulk acoustic wave resonator, comprising:
a substrate;
an acoustic mirror;
a bottom electrode disposed over the substrate;
a top electrode facing the bottom electrode and having an electrode connection portion; and
a piezoelectric layer disposed above the bottom electrode and between the bottom electrode and the top electrode,
wherein:
the edge of the top electrode is provided with a suspension wing structure and/or a bridge structure, and a gap is arranged below the suspension wing structure and/or the bridge structure; and is
The resonator also includes a fill layer that fills only a portion of the void.
The filling layer can fill the inner part of the gap; or the filling layer fills a middle portion of the void.
Based on the above, the invention further provides a filter, which includes a plurality of bulk acoustic wave resonators. The invention also provides an electronic device comprising the filter or the bulk acoustic wave resonator.
Although embodiments of the present invention have been shown and described, it would be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents.
Claims (21)
1. A bulk acoustic wave resonator comprising:
a substrate;
an acoustic mirror;
a bottom electrode disposed over the substrate;
a top electrode facing the bottom electrode and having an electrode connection portion; and
a piezoelectric layer disposed above the bottom electrode and between the bottom electrode and the top electrode,
wherein:
the edge of the top electrode is provided with a suspension wing structure and/or a bridge structure, and a gap is arranged below the suspension wing structure and/or the bridge structure;
the resonator also includes a fill layer that fills only a portion of the void.
2. The resonator of claim 1, wherein:
the filler layer fills a portion of the void under the suspension wing structure or the bridge structure.
3. The resonator of claim 1, wherein:
the edge of the top electrode is provided with a suspension wing structure and a bridge part structure;
the filler layer fills a portion of the void below the suspension wing structure and the bridge structure.
4. The resonator of claim 1, wherein:
the fill layer is formed of a dielectric material.
5. The resonator of any of claims 1-4, wherein:
the filling layer fills the inner part of the gap; or
The filling layer fills a middle portion of the void.
6. The resonator of claim 5, wherein:
the value range of the ratio r of the width of the filling layer to the width of the gap is as follows: 0.2< r < 1.
7. The resonator of claim 6, wherein:
the ratio r of the width of the filling layer to the width of the void is in the range of 0.25 to 0.75, optionally the ratio of the width of the filling layer to the width of the void is in the range of 0.4 to 0.6.
8. The resonator of any of claims 1-7, wherein:
the resonator further comprises a protruding structure on the upper side of the suspension wing structure and/or bridge structure.
9. The resonator of claim 8, wherein:
the protrusion structure has a base protrusion in contact with the top electrode and an extension extending over the cantilever structure and/or the bridge structure.
10. The resonator of claim 9, wherein:
the width of the base protrusion is in the range of 0.2 μm to 10 μm, and further, in the range of 0.75 μm to 6 μm.
11. The resonator of any of claims 1-7, wherein:
the resonator further comprises a protruding structure below the suspension wing structure and/or bridge structure, the void being formed below the protruding structure.
12. The resonator of any of claims 1-11, wherein:
the suspension wing structure is a multi-step structure, and/or the inner side of the bridge structure is a multi-step structure, the gap is formed below the multi-step structure, and the gap is a step gap.
13. The resonator of claim 12, wherein:
the filling layer fills the innermost level voids.
14. The resonator of claim 12, wherein:
the multi-step structure includes a first step connected to the top electrode and a second step connected to the first step.
15. The resonator of claim 14, wherein:
the first step has a gap height of 50A-500A.
16. The resonator of claim 15, wherein:
the second step has a gap height of 500A-4000A.
17. The resonator of claim 15, wherein:
the width of the first step is 0.2-7 μm, and the width of the second step is 0.2-7 μm.
18. The resonator of claim 12, wherein:
the resonator includes a protrusion structure disposed above the multi-step structure.
19. The resonator of claim 12, wherein:
the resonator includes a protruding structure disposed below the multi-step structure.
20. A filter comprising the bulk acoustic wave resonator according to any one of claims 1-19.
21. An electronic device comprising the filter of claim 20 or the bulk acoustic wave resonator of any of claims 1-19.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910480623.6A CN111010112B (en) | 2019-06-04 | 2019-06-04 | Resonator with partially filled gap of step structure, filter and electronic device |
| PCT/CN2020/076213 WO2020244254A1 (en) | 2019-06-04 | 2020-02-21 | Resonator with gap of step structure being partially filled, and filter and electronic device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910480623.6A CN111010112B (en) | 2019-06-04 | 2019-06-04 | Resonator with partially filled gap of step structure, filter and electronic device |
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| CN111010112B CN111010112B (en) | 2023-12-15 |
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| CN114006595A (en) * | 2021-12-30 | 2022-02-01 | 深圳新声半导体有限公司 | Bulk acoustic wave resonator and bulk acoustic wave filter |
| WO2022228384A1 (en) * | 2021-04-27 | 2022-11-03 | 诺思(天津)微***有限责任公司 | Bulk acoustic resonator, filter and electronic device |
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Also Published As
| Publication number | Publication date |
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| CN111010112B (en) | 2023-12-15 |
| WO2020244254A1 (en) | 2020-12-10 |
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