CN111009586A - Photoelectric device and preparation method thereof - Google Patents

Photoelectric device and preparation method thereof Download PDF

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CN111009586A
CN111009586A CN201911196921.9A CN201911196921A CN111009586A CN 111009586 A CN111009586 A CN 111009586A CN 201911196921 A CN201911196921 A CN 201911196921A CN 111009586 A CN111009586 A CN 111009586A
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秦胜妍
屈军毅
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Shenzhen Lepower Opto Electronics Co ltd
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Abstract

The invention relates to a photoelectric device and a preparation method thereof, wherein the photoelectric device comprises a first electrode, a second electrode, an n-type layer and a p-type layer, wherein the p-type layer is laminated on the n-type layer and forms a van der Waals heterostructure, the first electrode is electrically connected with the n-type layer, and the second electrode is electrically connected with the p-type layer; the n-type layer is made of SnS2And the p-type layer is made of GaSe. The photoelectric device passes through SnS2Forming a Van der Waals heterostructure with GaSe, and reacting the p-GaSe/n-CdI2When the crystal Van der Waals heterostructure is arranged on the flexible substrate for photoelectric characteristic detection, the p-GaSe/n-CdI is found2The crystalline van der waals heterostructure has better photoelectric characteristics. The p-GaSe/n‑CdI2The photoelectric device of the crystal Van der Waals heterostructure can be caused by p-GaSe/n-CdI2The better photoelectric properties of crystalline van der waals heterostructures allow for better performance.

Description

Photoelectric device and preparation method thereof
Technical Field
The invention relates to the technical field of display, in particular to a photoelectric device and a preparation method thereof.
Background
In recent years, two-dimensional (2D) crystals with excellent properties have been discovered and there has been a great interest in stacking two-dimensional materials using van der waals heterostructures, enabling them to create a wide range of heterojunctions in a new frontier area of the modern semiconductor industry. In this respect, unlike conventional heterostructures, two-dimensional heterostructures are gradually becoming ideal platforms for their potential applications in the fields of atomic thin electronics, optoelectronics, and light trapping. In contrast, a variety of different heterojunction frameworks formed by stacking a plurality of two-dimensional crystals laterally and vertically have stimulated intense research into novel two-dimensional heterojunctions. Heterojunctions in optoelectronic devices typically require a different type, i.e., a p-n heterojunction, which is composed of two semiconductors of different carrier types. However, although vertical stacked p-n heterostructures based on two-dimensional materials have been studied in some literature due to their great potential for application, there is still much room for improvement in their performance. In particular, sharply cleaned interfaces for carrier transport in vertical heterostructures based on p-and n-type materials have become promising and still challenging, which is desirable for achieving unprecedented functional device applications through interlayer coupling. These heterostructures have become quite stringent and open a new avenue for exploring new optoelectronic device applications, such as high mobility Field Effect Transistors (FETs), tunable p-n junction photodiodes, LEDs, solar cells and sensors.
Up to now, a wide variety of 2D-Van der Waals heterostructures, including WSe2/MoS2、WS2/MoS2、p/n-MoS2And MoS2Black phosphorus, etc., have been reported for new photovoltaic applications. The novel photoelectric device based on the 2D material, particularly the heterojunction, has wide combination of various 2D materials and wide application prospect. Shows new functional characteristics, has obvious strong light-substance interaction and wide development prospect.
Disclosure of Invention
In view of the above, there is a need for a novel optoelectronic device that employs a novel van der waals heterostructure with superior optoelectronic properties.
In addition, a preparation method of the photoelectric device is also needed to be provided.
An optoelectronic device comprising a first electrode, a second electrode, an n-type layer, and a p-type layer, the p-type layer being laminated on the n-type layer to form a van der Waals heterostructure, the first electrode being electrically connected to the n-type layer, the second electrode being electrically connected to the p-type layer;
the n-type layer is made of SnS2And the p-type layer is made of GaSe.
A method for manufacturing a photoelectric device comprises the following steps:
laminating a p-type layer on an n-type layer to form a van der Waals heterostructure, wherein the n-type layer is made of SnS2The p-type layer is made of GaSe; and
and forming a first electrode electrically connected with the n-type layer and a second electrode electrically connected with the p-type layer to obtain the photoelectric device.
The photoelectric device passes through SnS2Forming a Van der Waals heterostructure with GaSe, and reacting the p-GaSe/n-CdI2When the crystal Van der Waals heterostructure is arranged on the flexible substrate for photoelectric characteristic detection, the p-GaSe/n-CdI is found2The crystalline van der waals heterostructure has better photoelectric characteristics. Uses the p-GaSe/n-CdI2The photoelectric device of the crystal Van der Waals heterostructure can be caused by p-GaSe/n-CdI2The better photoelectric properties of crystalline van der waals heterostructures allow for better performance.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Wherein:
fig. 1 is a schematic cross-sectional view of a photodetector according to an embodiment.
Fig. 2 is a schematic cross-sectional structure diagram of a photovoltaic cell according to an embodiment.
Fig. 3 is a schematic cross-sectional view of another embodiment of a photovoltaic cell.
FIG. 4a is a p-GaSe/n-SnS of the photodetector obtained in example 12Schematic atomic configuration of van der waals heterostructures.
FIG. 4b shows p-GaSe/n-SnS of the photodetector obtained in example 12Optical microscopy images of van der waals heterostructures.
FIG. 4c shows p-GaSe material and n-SnS for the photodetector obtained in example 12Single crystal X-ray diffraction pattern of the starting material.
FIG. 4d is p-GaSe/n-SnS of the photodetector made in example 12Raman spectra of van der waals heterostructures.
FIG. 5a is a p-GaSe/n-SnS of the photodetector obtained in example 12Optical microscopy images of van der waals heterostructures.
FIG. 5b shows p-GaSe/n-SnS of the photodetector obtained in example 12I of Van der Waals heterostructureSD-VSDAnd (5) a characteristic diagram.
FIG. 5c shows p-GaSe/n-SnS of the photodetector obtained in example 12Van der Waals heterostructures at different VgI belowSD-VSDAnd (5) a characteristic diagram.
FIG. 5d is p-GaSe/n-SnS of the photodetector made in example 12Characteristic diagram of rectification ratio of Van der Waals heterostructure.
FIG. 6a is a graph of p-GaSe/n-SnS in the photodetector made in example 12Graph of the photo-response of van der waals heterostructure at different intensities.
FIG. 6b shows p-GaSe/n-SnS in the photo-detector made in example 12Graph of photoresponse versus illumination laser power for van der waals heterostructures.
FIG. 6c shows p-GaSe/n-SnS in the photo-detector made in example 12Specific detectivity of van der waals heterostructures-illumination laser power plot.
FIG. 6d shows p-GaSe/n-SnS in the photo-detector made in example 12Specific detectivity of van der waals heterostructures-illumination laser power plot.
Fig. 6e and 6f show the photo-detector pair prepared in example 1 with one on/off illumination (p ═ 0.326 mWcm)-2) The response map of (2).
Fig. 7 is a graph of current density versus voltage characteristics under AM 1.5G illumination for the photodetector made in example 1.
Fig. 8a is an optical microscope image of the flexible photodetector made in example 6.
Fig. 8b is a graph of photoresponse versus laser power for the flexible photodetector made in example 6.
Figure 8c shows the on/off illumination of a flexible photodetector pair made in example 6 (p 0.326 mWcm)-2) The response map of (2).
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
The application discloses a photoelectric device of an embodiment, including a first electrode, a second electrode, an n-type layer and a p-type layer, wherein the p-type layer is laminated on the n-type layer so as to form a van der Waals heterostructure, the first electrode is electrically connected with the n-type layer, and the second electrode is electrically connected with the p-type layer.
The n-type layer is made of n-type CdI2The material of the p-type layer is GaSe.
The photoelectric device passes through SnS2Forming a Van der Waals heterostructure with GaSe, and reacting the p-GaSe/n-CdI2When the crystal Van der Waals heterostructure is arranged on the flexible substrate for photoelectric characteristic detection, the p-GaSe/n-CdI is found2Crystalline van der waals heterostructures have better optoelectronic properties (example). Uses the p-GaSe/n-CdI2The photoelectric device of the crystal Van der Waals heterostructure can be caused by p-GaSe/n-CdI2The better photoelectric properties of crystalline van der waals heterostructures allow for better performance.
Preferably, the material of the n-type layer is SnS2。
Preferably, the thickness of the n-type layer is 8nm to 15nm, and the thickness of the p-type layer is 20nm to 32 nm.
Specifically, GaSe, a III-VI2D layered semiconductor, has a planar four-layer (TL) structure in a unit cell, consisting of four covalent bonds in a series of Se-Ga-Ga-Se, a band gap energy (E) of about 2.1eVg) And an intrinsic p-type property. The advantage of GaSe over other TMDs is that it has a direct band gap in bulk and very little layer thickness (II)<7 layers). SnS2Is an n-type CdI2A crystal structure of type EgThe 2.3eV forbidden band is of great interest because of its abundance on the earth and green photoelectric properties. SnS2Even when scaled down from bulk to monolayer, is still an indirect bandgap. Intrinsic band gaps in the range of 1-3 eV are very significant for optoelectronic devices, i.e., photodetectors, photovoltaic devices, and flexible devices. In view of all these different characteristics, it is foreseen that p-GaSe/n-SnS2The Van der Waals heterostructure will have many attractive properties and lay the foundation for developing functional photoelectric devices with important significanceA good foundation.
In p-GaSe/n-SnS2Additional studies of Van der Waals heterostructures have shown that p-GaSe/n-SnS2The Van der Waals heterostructure has high light responsiveness (about 35A/W, V at 633 nm)g30V), external quantum efficiency of about 62%, specific detectivity of about 8.2 × 1013J. These excellent properties are far superior to other types of heterojunctions in combination with other layered materials. Impressively, p-GaSe/n-SnS2The van der waals heterostructure can be used as a photovoltaic cell, and the high power conversion efficiency of the photovoltaic cell is about 2.84%.
Preparation of p-GaSe/n-SnS on flexible PET substrate2After van der Waals heterostructure, p-GaSe/n-SnS2The photoelectric characteristics of the Van der Waals heterostructure were examined without bending, showing that p-GaSe/n-SnS2Good durability and retention of van der waals heterostructures.
It can be seen that p-GaSe/n-SnS2The excellent photoelectric properties of van der Waals heterostructures enable their application in a variety of optoelectronic devices, hereinafter referred to as p-GaSe/n-SnS2Van der waals heterostructures are described for example applications in photodetectors and photovoltaic cells.
In the photodetector 100 of one embodiment shown in fig. 1, a substrate 110, an n-type layer 120, a p-type layer 130, a first electrode 140, and a second electrode 150 are sequentially stacked, and the substrate 110, the n-type layer 120, and the p-type layer 130 are stacked.
Wherein the p-type layer 130 is stacked on the n-type layer 120 to form a van der waals heterostructure, the first electrode 140 is electrically connected to the n-type layer 120, and the second electrode 150 is electrically connected to the p-type layer 130.
The n-type layer 120 is made of n-type CdI2The material of the p-type layer 130 is GaSe.
Preferably, the material of the n-type layer 120 is SnS2。
Preferably, the thickness of the n-type layer 120 is 8nm to 15nm, and the thickness of the p-type layer 130 is 20nm to 32 nm.
Specifically, in this embodiment, the thickness of the n-type layer 120 is 10.5nm, and the thickness of the p-type layer 130 is 25.5 nm.
In particular toIn this embodiment, the substrate 110 is Si/SiO2A substrate or a PET substrate.
Preferably, the first electrode 140 is a Cr electrode, and the thickness of the first electrode 140 is 3nm to 10 nm. Specifically, in this embodiment, the thickness of the first electrode 140 is 5 nm.
Preferably, the second electrode 150 is an Au electrode, and the thickness of the first electrode 150 is 50nm to 200 nm. Specifically, in this embodiment, the thickness of the second electrode 150 is 100 nm.
An embodiment of a photovoltaic cell 200 as shown in fig. 2 includes a substrate 210, a first electrode 220, an n-type layer 230, a p-type layer 240, and a second electrode 250, which are sequentially stacked.
In this embodiment, the photovoltaic cell 200 is a single-sided photovoltaic cell.
Wherein a p-type layer 240 is stacked on the n-type layer 230 to form a van der waals heterostructure, the first electrode 220 is electrically connected to the n-type layer 230, and the second electrode 240 is electrically connected to the p-type layer 250.
The n-type layer 120 is made of n-type CdI2The material of the p-type layer 130 is GaSe.
Preferably, the material of the n-type layer 120 is SnS2。
Another embodiment of a photovoltaic cell 300, as shown in fig. 3, includes a first electrode 310, one p-type layer 320, one n-type layer 330, a substrate 340, another n-type layer 350, another p-type layer 360, and a second electrode 370, which are sequentially stacked.
In this embodiment, the photovoltaic cell 300 is a bifacial photovoltaic cell.
Wherein one p-type layer 320 and one n-type layer 330 form a van der waals heterostructure and the other n-type layer 350 and the other p-type layer 360 also form a van der waals heterostructure.
The n-type layer 120 is made of n-type CdI2The material of the p-type layer 130 is GaSe.
Preferably, the material of the n-type layer 120 is SnS2。
The invention also discloses a preparation method of the photoelectric device, which comprises the following steps:
laminating a p-type layer on an n-type layerForming a van der Waals heterostructure, the n-type layer being made of SnS2The p-type layer is made of GaSe; and
and forming a first electrode electrically connected with the n-type layer and a second electrode electrically connected with the p-type layer to obtain the photoelectric device.
Referring to fig. 1, when the optoelectronic device is a photodetector 100, the method for manufacturing the photodetector 100 includes the following steps:
providing a substrate 110;
SnS obtained by mechanical stripping2The foil being transferred to a substrate 110, SnS2The sheet is the n-type layer 120;
transferring the mechanically exfoliated GaSe flakes to SnS2On the sheet, the GaSe sheet is the p-type layer 130; and
a first electrode 140 electrically connected to the n-type layer 120 and a second electrode 150 electrically connected to the p-type layer 130 are formed by evaporation to obtain a photodetector.
In this photodetector 100, the p-type layer 130 is stacked on the n-type layer 120 and forms a van der waals heterostructure.
The n-type layer 120 is made of n-type CdI2The material of the p-type layer 130 is GaSe.
Preferably, the material of the n-type layer 120 is SnS2。
Preferably, the thickness of the n-type layer 120 is 8nm to 15nm, and the thickness of the p-type layer 130 is 20nm to 32 nm.
Specifically, in this embodiment, the thickness of the n-type layer 120 is 10.5nm, and the thickness of the p-type layer 130 is 25.5 nm.
Specifically, in this embodiment, the substrate 110 is Si/SiO2A substrate. In another embodiment, the substrate 110 may also be selected from a PET substrate (flexible) on which SnS is formed by sequential deposition2Layers and GaSe layers.
Preferably, the first electrode 140 is a Cr electrode, and the thickness of the first electrode 140 is 3nm to 10 nm. Specifically, in this embodiment, the thickness of the first electrode 140 is 5 nm.
Preferably, the second electrode 150 is an Au electrode, and the thickness of the first electrode 150 is 50nm to 200 nm. Specifically, in this embodiment, the thickness of the second electrode 150 is 100 nm.
DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION
Example 1: preparation of a photodetector
Providing Si/SiO2A substrate.
SnS with thickness of 10.5nm is prepared by adopting mechanical stripping method2The thin slice is prepared by adopting a mechanical stripping method to prepare GaSe thin slice with the thickness of 25.5 nm.
SnS2Transfer of flakes to Si/SiO2Substrate, followed by GaSe flake transfer to SnS2On a sheet.
Vapor deposition formation and SnS2Cr electrode electrically connected to thin plate and having thickness of 5nm and SnS2And electrically connecting the thin sheets with an Au electrode with the thickness of 100nm to obtain the photoelectric detector.
Example 2
The photodetector obtained in example 1 was examined to confirm whether or not the photodetector was prepared to have p-GaSe/n-SnS2Van der waals heterostructures, resulting in fig. 4 a-4 d.
The photodetector prepared in example 1 had p-GaSe/n-SnS as shown in FIG. 4a2Van der waals heterostructures.
p-GaSe/n-SnS for photodetector made in example 1 as shown in FIG. 4b2Optical microscopy images of van der waals heterostructures show a significant increase in the color contrast between layer interfaces.
GaSe crystals and SnS grown by Chemical Vapor Transport (CVT) method shown in connection with FIG. 4c2Single crystal X-ray diffraction (XRD) of the crystal, which is the same as the diffraction pattern of the published material.
p-GaSe/n-SnS for the photodetector made in example 1 in conjunction with FIG. 4d2Raman spectra of van der waals heterostructures. At-208 nm (E)g) And 316 (A)2 1g) The peak position of (A) can be attributed to SnS2The Raman spectrum of the GaSe crystal is between 137nm (A)1 1g)、216nm(E1 2g)、～250nm(E2 1g) And 305nm (A)2 1g) Has 4 peaksThis is in accordance with the published material.
Example 3
The photodetector obtained in example 1 was tested for p-GaSe/n-SnS in the photodetector obtained in example 12The photoelectric properties of the van der Waals heterostructure were tested to obtain FIGS. 5 a-5 d.
p-GaSe/n-SnS of a photodetector made as shown in example 1 in FIG. 5a2Optical microscopy images of van der waals heterostructures with metal electrodes deposited for electrical and optoelectronic measurements. In measuring p-GaSe/n-SnS of the photodetector obtained in example 12Before van der Waals heterostructures, we first analyzed multilayer SnS separately2And electrical characteristics of the GaSe field effect transistor to determine the conductive properties of the channel material.
As shown in FIG. 5b, p-GaSe/n-SnS of the photodetector obtained in example 12I of Van der Waals heterostructureSD-VSDThe characteristic shows a pronounced current rectifying behavior. Saturation current of the heterojunction is observed under reverse bias, following the Shockley diode equation:
Figure BDA0002294881950000091
wherein, IsSaturation current under reverse bias, N being an ideal factor for device fabrication, VtAnd VdsThermal voltage and bias voltage, respectively.
Will VgSweep from 0 to-70V to study V of heterojunctionsgDepending on the output characteristics, fig. 5c results.
Applying a negative VgThe current in the forward bias is boosted and the saturation current in the reverse bias is maintained, resulting in fig. 5 d. As can be seen from FIG. 5d, the p-GaSe/n-SnS of the photodetector prepared in example 12Van der Waals heterostructure at Vgat-30V, has a rectification ratio of about 102.
As can be seen from FIGS. 5a to 5d, the difference between p-GaSe and n-SnS2With good span of van der waals p-n heterojunctions therebetween.
Example 4
The photoelectric properties of the entire photodetector obtained in example 1 were measured to obtain fig. 6a to 6 f.
For p-GaSe/n-SnS in the photodetector prepared in example 12The photoresponse of van der Waals heterostructures was tested using 633nm lasers (0 (dark), 0.328, 1.6, 3.1 and 32.6 mWcm) of different intensities-2) Irradiation apparatus, fig. 6a was obtained. Wherein the photocurrent (I)photo) By inducing a current (I) from lightLight) Minus dark current (I)dark) And (4) calculating.
As shown in FIG. 6a, as the illumination intensity increases, the reverse bias voltage IphotoGradually increase, which indicates thatphotoThere is a strong dependence on the incident power. A possible cause of the increase in reverse current under illumination is the pronounced photovoltaic effect.
Next, the performance of the photodiode was evaluated by calculating the photoresponse (r) and the External Quantum Efficiency (EQE), resulting in fig. 6 b. Fig. 6b shows the intensity of the laser-related signal r, defined as the ratio of the generated photocurrent to the total incident photon energy, i.e. r ═ Iph/(P)λS) in which PλAnd S is the incident light power and illumination area, respectively. At 633nm, 0.326mWcm-2Under illumination, the photoresponse rate of the p-n junction can reach r-24.8 AW-1This is the junction with the highest optical responsivity of the currently reported 2D p-n junction. EQE (%) defined as hcr/eλWhere h is the Planck constant, c is the speed of light, r is the photoresponsiveness of the device, e is the electronic charge, and λ is the lasing wavelength.
FIG. 6c shows the EQE of p-GaSe/n-SnS2 at 633nm, Vds＝10V，VgUp to about 62% at 0V. Another key parameter for determining the photodetection performance of the photodetector made in example 1 is the specific detectivity (D).
Figure BDA0002294881950000101
Wherein R isλA, e and IdarkRespectively, photoresponsivity, illumination area, elementary charge and dark current.
Fig. 6D shows D as a function of the illumination laser power. D of prepared p-n heterojunction is 8.2 multiplied by 10 according to measured parameters13J ratio commercial silicon photodiode (10)13J) And InGaAs (. about.10)12J～1013J) In that respect Since the dark current is low under the reverse bias condition, a good photo-response property is obtained.
In addition, time resolved photoresponses were also performed to show the response time (τ) of p-GaSe/n-SnS heterojunction photodiodes. Continuous on/off illumination measurement I with 633nm laserlightT-map, resulting in fig. 6e and 6 f.
Fig. 6e and 6f show the photo-detector prepared in example 1 with one on/off illumination (p ═ 0.326 mWcm)-2) In response to the photocurrent (I) under the illuminationlight) Increases sharply and decreases immediately after shutdown. The results show that the rise time of the photodetector manufactured in example 1 is about 9ms and the fall time is about 8 ms. Based on time resolved measurements, the calculated bandwidth of the device is-12.8 Hz. If the response time (9ms) is faster, the bandwidth of the calculation will be wider, since the response time can also be expressed as the frequency response, i.e. the frequency at which the photodetector output drops by 3 db. Approximately f3db0.35/tr, where tr is the response time.
Example 5
The photodetector obtained in example 1 was tested in a current density-voltage (J-V) characteristic device under AM 1.5G illumination, yielding fig. 7.
As shown in FIG. 7, under illumination, the open circuit voltage (V)oc) 0.51V, short-circuit current density (J)sc) Is 26.5mA · cm-2The fill factor (ff) is 0.42 and the Power Conversion Efficiency (PCE) is 2.84%.
As can be seen, the above p-GaSe/n-SnS2Van der waals heterostructures may be applied to photovoltaic cells.
Example 6: preparation of flexible photoelectric detector
A PET substrate is provided.
SnS with the thickness of 10.5nm is deposited and sequentially formed on a PET substrate2A layer and a GaSe layer with a thickness of 25.5nm, followed by vapor depositionAnd SnS2Cr electrode electrically connected to thin plate and having thickness of 5nm and SnS2And electrically connecting the thin sheets with an Au electrode with the thickness of 100nm to obtain the flexible photoelectric detector.
Example 7
The flexible photodetector obtained in example 6 was tested to obtain fig. 8a to 8 c.
FIG. 8a shows an optical microscope image of the flexible photodetector obtained in example 6, in which p-GaSe/n-SnS is present in the flexible photodetector obtained in example 62Van der waals heterostructures can adhere well to PET surfaces, revealing the potential for flexibility in flexible photodetectors. Subsequent thermal deposition of metal electrodes at both ends further ensures mechanical flexibility.
As shown in FIG. 8b, the photocurrent increased with increasing laser power at a power density of 0.326mWcm-2Generates about 3.8AW-1The highest optical responsivity.
To distinguish p-GaSe/n-SnS2Performance of the device on both flat and curved (radius about 2.5cm) PET, comparing FIG. 8c with FIGS. 6e and 6f, we observed a slight decrease in responsivity in the curved state compared to the flat state, to 3.2AW under the same measurement conditions-1。
These studies indicate that p-GaSe/n-SnS2The flexibility of van der waals heterostructures and the potential for wearable photovoltaic applications.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the claims. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (10)

1. An optoelectronic device comprising a first electrode, a second electrode, an n-type layer, and a p-type layer laminated on the n-type layer to form a van der Waals heterostructure, the first electrode electrically connected to the n-type layer, the second electrode electrically connected to the p-type layer;
the n-type layer is made of n-type CdI2The p-type layer is made of GaSe.
2. The optoelectronic device according to claim 1, wherein the n-type layer is composed of SnS2。
3. The optoelectronic device according to claim 1, wherein the n-type layer has a thickness of 8nm to 15nm and the p-type layer has a thickness of 20nm to 32 nm.
4. The optoelectronic device according to any one of claims 1 to 3, wherein the optoelectronic device is a photodetector, the photodetector comprises a substrate, the n-type layer, the p-type layer, the first electrode, and the second electrode, and the substrate, the n-type layer, and the p-type layer are sequentially stacked.
5. The optoelectronic device according to claim 4, wherein the substrate is Si/SiO2A substrate or a PET substrate;
the first electrode is a Cr electrode, and the thickness of the first electrode is 3 nm-10 nm;
the second electrode is an Au electrode, and the thickness of the first electrode is 50 nm-200 nm.
6. The optoelectronic device according to any one of claims 1 to 3, wherein the optoelectronic device is a photovoltaic cell comprising a substrate, the first electrode, the n-type layer, the p-type layer and the second electrode, which are sequentially stacked.
7. The optoelectronic device according to any one of claims 1 to 3, wherein the optoelectronic device is a photovoltaic cell comprising the first electrode, one of the p-type layers, one of the n-type layers, a substrate, another of the n-type layers, another of the p-type layers, and the second electrode, which are sequentially stacked, one of the p-type layers and one of the n-type layers forming a van der Waals heterostructure, and the other of the n-type layers and the other of the p-type layers also forming a van der Waals heterostructure.
8. A method for manufacturing a photoelectric device is characterized by comprising the following steps:
laminating a p-type layer on an n-type layer to form a Van der Waals heterostructure, wherein the n-type layer is made of n-type CdI2The p-type layer is made of GaSe; and
and forming a first electrode electrically connected with the n-type layer and a second electrode electrically connected with the p-type layer to obtain the photoelectric device.
9. The method for manufacturing an optoelectronic device according to claim 8, wherein the optoelectronic device is a photodetector, and the method for manufacturing the photodetector comprises the steps of:
providing a substrate;
SnS obtained by mechanical stripping2Flakes are transferred onto the substrate, the SnS2The thin sheet is the n-type layer;
transferring the mechanically exfoliated GaSe flakes to the SnS2On the sheet, the GaSe sheet is the p-type layer; and
and forming a first electrode electrically connected with the n-type layer and a second electrode electrically connected with the p-type layer by evaporation to obtain the photoelectric detector.
10. The method for manufacturing an optoelectronic device according to claim 9, wherein the material of the n-type layer is SnS2；
The thickness of the n-type layer is 8 nm-15 nm, and the thickness of the p-type layer is 20 nm-32 nm;
the substrate is Si/SiO2A substrate or a PET substrate;
the first electrode is a Cr electrode, and the thickness of the first electrode is 3 nm-10 nm;
the second electrode is an Au electrode, and the thickness of the first electrode is 50 nm-200 nm.
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