CN111007330A - Method and system for selecting single event locking effect protection resistor - Google Patents
Method and system for selecting single event locking effect protection resistor Download PDFInfo
- Publication number
- CN111007330A CN111007330A CN201911108078.4A CN201911108078A CN111007330A CN 111007330 A CN111007330 A CN 111007330A CN 201911108078 A CN201911108078 A CN 201911108078A CN 111007330 A CN111007330 A CN 111007330A
- Authority
- CN
- China
- Prior art keywords
- protected
- single event
- value
- locking
- current value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/001—Measuring interference from external sources to, or emission from, the device under test, e.g. EMC, EMI, EMP or ESD testing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/001—Measuring interference from external sources to, or emission from, the device under test, e.g. EMC, EMI, EMP or ESD testing
- G01R31/002—Measuring interference from external sources to, or emission from, the device under test, e.g. EMC, EMI, EMP or ESD testing where the device under test is an electronic circuit
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Tests Of Electronic Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
The invention discloses a method and a system for screening a single event locking effect protection resistor, wherein the method comprises the following steps: giving a locking current value according to an obtained single event locking effect electrical parameter test result of the object to be protected; analyzing the normal working electrical performance condition of the object to be protected, and determining the normal working voltage value, the normal working current value and the power supply voltage value data range during normal working of the object to be protected under the working condition; determining the minimum value of the series resistance of the object to be protected according to the locking current value and the normal working voltage value; determining the maximum value of the series resistance of the object to be protected according to the normal working current value and the minimum power supply voltage value; and determining the screening result of the series resistance of the object to be protected according to the determined minimum value and the maximum value of the series resistance of the object to be protected. The invention can solve the protection problem of single event locking sensitive devices such as COTS devices and the like in space application.
Description
Technical Field
The invention relates to the technical field of radiation resistance of components, in particular to a method and a system for screening a single event locking effect protection resistor.
Background
With the rapid development of satellite technology, the supply of high-grade components has been gradually unable to meet the demands of space-increasing tasks due to factors such as cost, procurement period and performance. Commercial off-the-shelf (COTS) technology is increasingly being used in satellite technology because of its advantages such as high performance, short arrival time, and low cost. However, the radiation resistance in space application is not considered in the development process of the COTS device. Therefore, radiation-resistant reinforcement measures are needed for space application of COTS devices to reduce application risks caused by radiation effects.
Single Event Latch-up (SEL) is one of radiation effects of a cosmic space radiation environment on electronic devices, can cause the current of the devices to be increased rapidly in a short time, causes permanent damage to hardware, has great harmfulness, and causes the phenomenon of on-orbit SEL in satellites of various countries to cause partial function abnormity of the satellites or instrument failure. Therefore, it is necessary to take a single event lockout protection mitigation measure for COTS devices sensitive to single event lockouts. In the slowing measures, due to the factors of simple and quick operation and the like, the locking slowing degree is achieved by adopting a series resistor current limiting method, but the normal work of the circuit is influenced by too large resistance value, the protection effect is not achieved by too small resistance value, and the key of the problem is how to select the resistance value of the series resistor.
Disclosure of Invention
The technical problem solved by the invention is as follows: the method and the system overcome the defects of the prior art, provide the method and the system for screening the single event lock effect protection resistor, solve the problem of how to determine the selected series resistance value when protecting the single event lock sensitive circuit or device, and provide the technical conditions and requirements for the resistance screening.
The technical solution of the invention is as follows:
the invention discloses a method for selecting a single event locking effect protection resistor, which comprises the following steps:
according to the obtained single event locking effect electrical parameter test result of the object to be protected, a locking current value I is givenSEL;
Analyzing the normal working electrical property condition of the object to be protected, and determining the normal working voltage value V of the object to be protected under the working conditionCCNormal operating current value ICCAnd a value data range V of a power supply voltage during normal operationmin~Vmax;
According to the locking current value ISELAnd a normal operating voltage value VCCDetermining the minimum value R of the series resistance of the object to be protectedmin;
According to the normal working current value ICCAnd a minimum supply voltage value VminDetermining the maximum value R of the series resistance of the object to be protectedmax;
According to the determined minimum value R of the series resistance of the object to be protectedminAnd maximum value RmaxAnd determining the selection result of the series resistance of the object to be protected as R ═ { R ═ Rmin~Rmax}。
Optionally, the object to be protected is a single event latchup sensitive device or circuit with a CMOS process.
Optionally, the object to be safeguarded comprises: the single event lock sensitive circuit DUT and a series resistor R connected with the single event lock sensitive circuit DUT in series.
Optionally, a locking current value I is given according to the obtained single event locking effect electrical parameter test result of the object to be protectedSELThe method comprises the following steps: selecting an object to be protected, performing single-particle irradiation on the object to be protected by using a heavy ion source, stopping irradiation when a single-particle locking effect occurs, recording a current value when locking occurs, and recording the current value as ISEL。
Optionally, selecting an object to be protected, and performing single particle irradiation on the object to be protected by using a heavy ion source to obtain a test result; linear energy transfer from different particlesThe value LET is increased and decreased to obtain the threshold LET of the object to be protected for single event lockingth(ii) a When the linear energy transfer value of the object to be protected determined according to the test result is larger than the threshold LETthThen it is determined that a single event lockout effect has occurred.
Optionally, the method further comprises:
when LETth≥75MeV.cm2In the case of/mg, judging that the single event locking effect of the object to be protected is insensitive, and adopting a protection measure is not needed;
when LETth<75MeV.cm2And in the case of/mg, judging that the single event locking effect of the object to be protected is sensitive, and adopting protection measures.
Optionally, the normal working electrical performance condition of the object to be protected is analyzed, and the normal working voltage value V of the object to be protected under the working condition is determinedCCNormal operating current value ICCAnd a value data range V of a power supply voltage during normal operationmin~VmaxThe method comprises the following steps:
constructing an electrical performance parameter set according to a device work manual of a protected object;
screening the V matched with the working index of the object to be protected from the electrical performance parameter setCC、ICC、VminAnd Vmax。
Optionally, the minimum value R of the series resistance of the object to be protectedminThe formula of solution is as follows:
wherein (I)SEL)maxRepresents the maximum current value V increased when the object to be protected has single event lockingRminRepresenting the voltage, V, taken by the object to be protected in series with the minimum resistance when a single event lock occursRmin<<VCC。
Optionally, the maximum value R of the series resistance of the object to be protectedmaxThe formula of solution is as follows:
the invention also discloses a system for screening the single event locking effect protection resistor, which comprises the following steps:
the data acquisition module is used for giving a locking current value I according to the obtained single event locking effect electrical parameter test result of the object to be protectedSEL(ii) a Analyzing the normal working electrical property condition of the object to be protected, and determining the normal working voltage value V of the object to be protected under the working conditionCCNormal operating current value ICCAnd a value data range V of a power supply voltage during normal operationmin~Vmax;
A data calculation module for calculating the locking current value ISELAnd a normal operating voltage value VCCDetermining the minimum value R of the series resistance of the object to be protectedmin(ii) a According to the normal working current value ICCAnd a minimum supply voltage value VminDetermining the maximum value R of the series resistance of the object to be protectedmax;
A selection output module for determining the minimum value R of the series resistance of the object to be protectedminAnd maximum value RmaxAnd determining the selection result of the series resistance of the object to be protected as R ═ { R ═ Rmin~Rmax}。
Compared with the prior art, the invention has the advantages that:
(1) compared with the single particle locking protection method in the prior art, the single particle locking protection method and the single particle locking protection system for the single particle locking protection device have the advantages that a specific method for slowing down single particle locking of a circuit to be protected through a series resistor is provided, an obtaining way of the resistance value of the series resistor of a specific component or circuit is determined, important technical support is provided for the anti-single particle locking protection work of COTS components or single particle locking sensitive components for space navigation, the radiation risk that the components are selected by a satellite and are burnt out due to large current caused by single particle locking is reduced, and the safety and the reliability of operation of the satellite in orbit are guaranteed.
(3) The invention considers the difference of single event locking effect sensitivity of different COTS componentsIn addition, in order to characterize the degree of single event locking effect sensitivity, an evaluation method of the single event locking effect sensitivity is provided, namely, the linear energy transfer value of heavy ions is 75MeV.cm2Mg as the LET of the object to be protectedthLess than 75MeV.cm2When the voltage is/mg, the device is considered to belong to a single particle locking sensitive device; LET of object to be protectedthGreater than 75MeV.cm2And in the case of/mg, the device is not considered to belong to a single event locking sensitive device, and the index requirement for judging whether the object (device) to be protected has single event locking effect sensitivity is provided.
Drawings
FIG. 1 is a flow chart of a method for selecting a single event latchup protection resistor according to the present invention;
FIG. 2 is a connection diagram of an object to be protected according to the present invention;
FIG. 3 is a graphical illustration of electrical performance parameters for an exemplary circuit (LLV5638-EP) in accordance with the present invention;
fig. 4 is a schematic diagram of a serial DA part circuit after adding a current limiting resistor according to the present invention.
Detailed Description
Those skilled in the art will appreciate that those matters not described in detail in the present specification are well known in the art.
Example 1
The method aims to solve the problem that the resistance value of the single-event locking protection resistor is difficult to determine when the COTS device or the single-event locking sensitive device is applied in space. The single event locking sensitivity and locking current are given by utilizing a single event locking test of a device to be protected; meanwhile, working electrical performance parameters are recommended in a manual of the device to be protected, a working voltage range is given, and working voltage and working current under actual working conditions are given in combination with application conditions of the device to be protected (in a system); the range of the resistance value of the series resistor is obtained through a basis algorithm for selecting resistors under different conditions, and the size of the single event locking protection resistor is finally selected according to practical application and availability, so that the protection target of a sensitive component or circuit with single event locking is realized. The technology of the invention provides important technical support for the anti-single event locking protection work of the COTS components or the single event locking sensitive components for aerospace, reduces the radiation risk of heavy current burnout caused by single event locking when the components are selected by a satellite, and ensures the safety and reliability of the operation of the on-orbit satellite.
Referring to fig. 1, a flowchart of a method for selecting a single event latchup protection resistor according to the present invention is shown, where the method for selecting a single event latchup protection resistor includes:
In the invention, the object to be protected is a single event latchup sensitive element or circuit with CMOS technology, which comprises: the single event latchup protection method comprises a memory, an FPGA, a DSP, an A/D, D/A, CPU and the like, and mixed devices such as SoC and SiP containing CMOS process single event latchup sensitive devices, namely, CMOS process devices and the like which are possibly sensitive to single event latchup are selected as objects to be protected. Referring to fig. 2, which is a connection relationship diagram of an object to be protected, the object to be protected includes: the single event lock sensitive circuit DUT and a series resistor R connected with the single event lock sensitive circuit DUT in series.
Preferably, the current value I is lockedSELThe acquisition mode is as follows: selecting an object to be protected, performing single-particle irradiation on the object to be protected by using a heavy ion source, stopping irradiation when a single-particle locking effect occurs, recording a current value when locking occurs, and recording the current value as ISEL。
Further, the single event latchup effect is determined as follows: selecting an object to be protected, and performing single particle irradiation on the object to be protected by using a heavy ion source to obtain a test result; obtaining a threshold LET of the object to be protected for single particle locking according to linear energy transfer values LET (Linear transfer) of different particlesth(ii) a When the linear energy transfer value of the object to be protected determined according to the test result is larger than the threshold LETthThen it is determined that a single event lockout effect has occurred.
Furthermore, before protection, the single event locking effect of the object to be protected needs to be judgedWhether sensitive or not: when LETth≥75MeV.cm2In the case of/mg, judging that the single event locking effect of the object to be protected is insensitive, and adopting a protection measure is not needed; when LETth<75MeV.cm2And in the case of/mg, judging that the single event locking effect of an object to be protected (a component or a circuit) is sensitive, and adopting a protection measure. Wherein, the linear energy transfer value of the heavy ions is as follows: 75MeV.cm2/mg。
In the invention, an electrical performance parameter set can be constructed according to a device working manual of a protected object; then, screening the electrical property parameter set to obtain V matched with the working index of the object to be protectedCC、ICC、VminAnd Vmax. Namely, the normal working voltage range of the object to be protected can be given according to a product manual or (datasheet) of the object to be protected; and providing working voltage and working current by combining with actual application working conditions. For example, in a product manual of an object to be protected, electrical performance parameters for a typical circuit (LLV5638-EP) are described as shown in FIG. 3.
In the invention, the minimum value R of the series resistance of the object to be protectedminThe formula of solution is as follows:
wherein (I)SEL)maxRepresents the maximum current value V increased when the object to be protected has single event lockingRminAnd the voltage which is obtained when the object to be protected is connected with the minimum resistance in series and the single particle locking occurs is represented. Generally, under normal circuit conditions, it is considered thatVRmin<<VCCThus, RminThe resistance is approximately the resistance under the condition that the single event locking current occurs under the working state, namely the lower limit of the boundary of the series protection resistance is determined.
In the invention, the maximum value R of the series resistance of the object to be protectedmaxThe formula of solution is as follows:
Rmaxthe resistance selected for not affecting the normal working state of the device is the boundary upper limit of the series protection resistance.
In the invention, the minimum value R of the series resistance of the object to be protected is determinedminAnd maximum value RmaxFinally determining the selection result of the series resistance of the object to be protected as R ═ R { R ] according to the factors such as practical application conditions and market resistance availabilitymin~Rmax}。
Example 2
Test device selection
TLV5638MDREP is a dual-path 12-bit DAC converter produced by TI company, and the threshold value of the anti-single event locking LET is between 21.8MeV.cm2Mg and 37.2MeV.cm2Between/mg, the device locking is sensitive, and single event locking prevention measures need to be taken according to the key conditions of model application.
Circuit description of series resistance of object to be protected
Because the +5V power supply current of the TLV5638MDREP device is abnormally increased after the single event locking occurs, but the power supply can be restored after the power failure, the current passing through the device can be ensured to be very small under the condition that the current limiting resistor is used, so that the device cannot be locked under the condition that the locking current cannot be reached, and even if the single event locking phenomenon occurs, the power supply product can still restore the function by powering off again, thereby ensuring that the product cannot be permanently lost due to the device burning.
By way of analysis, a modified schematic diagram of the circuit is shown in fig. 4.
Obtaining resistance value of series resistor
The R value calculation is input mainly by the following conditions:
(1) the TLV5638MDREP power supply voltage range is 4.5V-5.5V;
(2) TLV5638MDREP normal operating current is about 7 mA;
(3) when single event locking occurs, TLV5638MDREP has the instantaneous locking current of 200 mA;
(4) after the current-limiting resistor is used, when the actual maximum current is less than 200mA, the single event locking effect can automatically exit, and the work of the device cannot be influenced;
(5) the value of R is preferably chosen to be high power rated while taking packaging into account.
According to the (1) and (2) input, considering the possible fluctuation of the power supply voltage, when the input voltage is calculated according to 5V, the TLV5638MDREP is determined that the lowest power supply voltage is calculated according to 4.65V, the voltage drop on the resistor R is 0.35V, and the formula shows thatThe calculation is carried out according to the calculation,
according to the entries (3) and (4), considering that a certain margin is required, I is setSELLess than 180mA, according to the formulaThe calculation is carried out according to the calculation,
then, the range of the series resistance is: r is more than 27.7 omega and less than or equal to 50 omega.
If R selects a resistor of RM3216-1/4W-43 omega type on the market, the voltage of a power supply pin is 5V-43X 0.007-4.699V after the fluctuation of the power supply voltage is considered, the maximum passing current is 5/43-116.3 mA after current limiting, and the maximum instantaneous power consumption of the resistor is 52/43=0.58W。
The analysis of the above results shows that the device voltage meets the requirement (5V ± 0.5V), the maximum current after current limiting is less than the locking current 200mA, the instantaneous resistance power consumption is within 6.25 × 0.25W to 1.5625W, and the time is within 1s, so that the requirement is met (the manual indicates that the RMK surface-mounted resistance has 6.25 times power consumption, and after 5s overload, Δ R is less than or equal to 0.1% R +0.01 Ω to 0.053 Ω, which is no problem).
Therefore, the TLV5638MDREP can be guaranteed to automatically exit the single-event locking state by setting a proper R value, and the normal work of the product is guaranteed.
Example 3
The invention discloses a system for screening a single event locking effect protection resistor, which comprises: the data acquisition module is used for giving a locking current value I according to the obtained single event locking effect electrical parameter test result of the object to be protectedSEL(ii) a Analyzing the normal working electrical property condition of the object to be protected, and determining the normal working voltage value V of the object to be protected under the working conditionCCNormal operating current value ICCAnd a value data range V of a power supply voltage during normal operationmin~Vmax(ii) a A data calculation module for calculating the locking current value ISELAnd a normal operating voltage value VCCDetermining the minimum value R of the series resistance of the object to be protectedmin(ii) a According to the normal working current value ICCAnd a minimum supply voltage value VminDetermining the maximum value R of the series resistance of the object to be protectedmax(ii) a A selection output module for determining the minimum value R of the series resistance of the object to be protectedminAnd maximum value RmaxAnd determining the selection result of the series resistance of the object to be protected as R ═ { R ═ Rmin~Rmax}。
The above description is only for the best mode of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention.
Those skilled in the art will appreciate that the details of the invention not described in detail in the specification are within the skill of those skilled in the art.
Claims (10)
1. A method for selecting a single event locking effect protection resistor is characterized by comprising the following steps:
according to the obtained single event locking effect electrical parameter test result of the object to be protected, a locking current value I is givenSEL;
Analyzing the normal working electrical property condition of the object to be protected, and determining the normal working voltage value V of the object to be protected under the working conditionCCNormal operating current value ICCAnd a value data range V of a power supply voltage during normal operationmin~Vmax;
According to the locking current value ISELAnd a normal operating voltage value VCCDetermining the minimum value R of the series resistance of the object to be protectedmin;
According to the normal working current value ICCAnd a minimum supply voltage value VminDetermining the maximum value R of the series resistance of the object to be protectedmax;
According to the determined minimum value R of the series resistance of the object to be protectedminAnd maximum value RmaxAnd determining the selection result of the series resistance of the object to be protected as R ═ { R ═ Rmin~Rmax}。
2. The method for screening the single event latchup effect protection resistor according to claim 1, wherein the object to be protected is a single event latchup sensitive device or circuit with a CMOS process.
3. The method for selecting the single event latchup effect protection resistor according to claim 1 or 2, wherein the object to be protected comprises: the single event lock sensitive circuit DUT and a series resistor R connected with the single event lock sensitive circuit DUT in series.
4. The method for screening the single event latchup effect protection resistor according to claim 1, wherein a latchup current value I is given according to an obtained single event latchup effect electrical parameter test result of an object to be protectedSELThe method comprises the following steps: selecting an object to be protected, performing single-particle irradiation on the object to be protected by using a heavy ion source, stopping irradiation when a single-particle locking effect occurs, recording a current value when locking occurs, and recording the current value as ISEL。
5. The method for screening the single event locking effect protection resistor according to claim 4, characterized in that an object to be protected is selected, single event irradiation is performed on the object to be protected by using a heavy ion source, and a test result is obtained; obtaining a threshold LET of the object to be protected for single event locking according to the linear energy transfer values LET of different particlesth(ii) a When the linear energy transfer value of the object to be protected determined according to the test result is larger than the threshold LETthThen it is determined that a single event lockout effect has occurred.
6. The method for selecting the single event latchup protection resistor according to claim 5, further comprising:
when LETth≥75MeV.cm2In the case of/mg, judging that the single event locking effect of the object to be protected is insensitive, and adopting a protection measure is not needed;
when LETth<75MeV.cm2And in the case of/mg, judging that the single event locking effect of the object to be protected is sensitive, and adopting protection measures.
7. The method for screening the single event latchup effect protection resistor according to claim 1, wherein the normal operating electrical property condition of the object to be protected is analyzed to determine the normal operating voltage value V of the object to be protected under the operating conditionCCNormal operating current value ICCAnd a value data range V of a power supply voltage during normal operationmin~VmaxThe method comprises the following steps:
constructing an electrical performance parameter set according to a device work manual of a protected object;
screening the V matched with the working index of the object to be protected from the electrical performance parameter setCC、ICC、VminAnd Vmax。
8. The method for selecting the single event latchup effect protection resistor according to claim 1, wherein the minimum R of the series resistance of the object to be protectedminThe formula of solution is as follows:
wherein (I)SEL)maxRepresents the maximum current value V increased when the object to be protected has single event lockingRminRepresenting the voltage, V, taken by the object to be protected in series with the minimum resistance when a single event lock occursRmin<<VCC。
10. a system for selecting a single event latchup protection resistor is characterized by comprising:
the data acquisition module is used for giving a locking current value I according to the obtained single event locking effect electrical parameter test result of the object to be protectedSEL(ii) a Analyzing the normal working electrical property condition of the object to be protected, and determining the normal working voltage value V of the object to be protected under the working conditionCCNormal operating current value ICCAnd power supply voltage value data during normal operationRange Vmin~Vmax;
A data calculation module for calculating the locking current value ISELAnd a normal operating voltage value VCCDetermining the minimum value R of the series resistance of the object to be protectedmin(ii) a According to the normal working current value ICCAnd a minimum supply voltage value VminDetermining the maximum value R of the series resistance of the object to be protectedmax;
A selection output module for determining the minimum value R of the series resistance of the object to be protectedminAnd maximum value RmaxAnd determining the selection result of the series resistance of the object to be protected as R ═ { R ═ Rmin~Rmax}。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911108078.4A CN111007330B (en) | 2019-11-13 | 2019-11-13 | Method and system for selecting single event locking effect protection resistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911108078.4A CN111007330B (en) | 2019-11-13 | 2019-11-13 | Method and system for selecting single event locking effect protection resistor |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111007330A true CN111007330A (en) | 2020-04-14 |
CN111007330B CN111007330B (en) | 2022-07-29 |
Family
ID=70113262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201911108078.4A Active CN111007330B (en) | 2019-11-13 | 2019-11-13 | Method and system for selecting single event locking effect protection resistor |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN111007330B (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6064555A (en) * | 1997-02-25 | 2000-05-16 | Czajkowski; David | Radiation induced single event latchup protection and recovery of integrated circuits |
CN102928773A (en) * | 2012-09-24 | 2013-02-13 | 北京圣涛平试验工程技术研究院有限责任公司 | Method for testing proton/single event effect resisting capacity of device |
CN103474951A (en) * | 2013-08-28 | 2013-12-25 | 北京空间飞行器总体设计部 | Low drop-out overcurrent protection circuit with controllable output |
US20170033554A1 (en) * | 2015-07-31 | 2017-02-02 | Harris Corporation | Single event latchup (sel) current surge mitigation |
CN107124176A (en) * | 2017-04-28 | 2017-09-01 | 中国电子科技集团公司第五十八研究所 | Latch cicuit is reinforced in single-ion transient state disturbance |
-
2019
- 2019-11-13 CN CN201911108078.4A patent/CN111007330B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6064555A (en) * | 1997-02-25 | 2000-05-16 | Czajkowski; David | Radiation induced single event latchup protection and recovery of integrated circuits |
CN102928773A (en) * | 2012-09-24 | 2013-02-13 | 北京圣涛平试验工程技术研究院有限责任公司 | Method for testing proton/single event effect resisting capacity of device |
CN103474951A (en) * | 2013-08-28 | 2013-12-25 | 北京空间飞行器总体设计部 | Low drop-out overcurrent protection circuit with controllable output |
US20170033554A1 (en) * | 2015-07-31 | 2017-02-02 | Harris Corporation | Single event latchup (sel) current surge mitigation |
CN107124176A (en) * | 2017-04-28 | 2017-09-01 | 中国电子科技集团公司第五十八研究所 | Latch cicuit is reinforced in single-ion transient state disturbance |
Non-Patent Citations (1)
Title |
---|
余永涛: "脉冲激光模拟SRAM单粒子效应的试验研究", 《中国优秀博硕士学位论文全文数据库(博士) 信息科技辑》 * |
Also Published As
Publication number | Publication date |
---|---|
CN111007330B (en) | 2022-07-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2479860B1 (en) | Built-in test for an overvoltage protection circuit | |
US9762049B2 (en) | Ground fault circuit interrupter (GFCI) monitor | |
CN108398977B (en) | Electrical device, integrated circuit and method for monitoring voltage | |
US8896975B2 (en) | Voltage regulator over-voltage detection system, method and apparatus | |
IE914124A1 (en) | Fail-resistant solid state interruption system | |
CN104181870A (en) | Control method and device | |
US20160054394A1 (en) | High Reliability Power Supply Configuration and Testing | |
JP2013220013A (en) | Overcurrent based power control and circuit reset | |
JP2009207279A (en) | Overcurrent protection device and electronic apparatus | |
US20140266272A1 (en) | Ground fault circuit interrupter and method | |
CN111007330B (en) | Method and system for selecting single event locking effect protection resistor | |
JP5511599B2 (en) | Commutation type shut-off device | |
Chacón et al. | A current limiter for satellite power protection | |
CN107591780A (en) | Into and exit the determination of safe mode | |
JP6639772B2 (en) | High current event mitigation circuit | |
US20170331282A1 (en) | Fault current limiter having fault checking system for power electronics and bypass circuit | |
US9391454B2 (en) | Apparatus and method for power supply fast discharging | |
JP2013507860A (en) | Method and system for self-diagnosis of wireless data service apparatus | |
JP7064441B2 (en) | Voltage clover | |
US20160372917A1 (en) | Active Intrinsically Safe Circuit | |
CN107332203A (en) | A kind of Over Current Protection System and method for inductive load | |
JP2005124332A (en) | Digital protection relay device | |
CN109473424B (en) | System electrostatic discharge circuit | |
Li et al. | A New Analyzing Method of Single Event Latch-Up Protection Circuit Based on Current Comparing and Its Performance Verification | |
US20180183434A1 (en) | ON CHIP REDUNDANT SYSTEM RESET FOR OUT OF CONTEXT FUNCTIONAL SAFETY SoC |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |