CN110993809A - Quantum dot light-emitting diode - Google Patents
Quantum dot light-emitting diode Download PDFInfo
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- CN110993809A CN110993809A CN201911309576.5A CN201911309576A CN110993809A CN 110993809 A CN110993809 A CN 110993809A CN 201911309576 A CN201911309576 A CN 201911309576A CN 110993809 A CN110993809 A CN 110993809A
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- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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Abstract
The application provides a quantum dot light-emitting diode, which comprises an anode, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a cathode which are sequentially stacked; the quantum dot light-emitting layer contains an amphiphilic polymer. The zinc oxide nanoparticle electron transport layer of the quantum dot light-emitting diode prepared in the application has higher film forming uniformity.
Description
Technical Field
The application belongs to the field of electroluminescence, and particularly relates to a quantum dot light-emitting diode.
Background
The quantum dot light-emitting diode has the advantages of high theoretical light-emitting efficiency, wide color gamut and the like. Therefore, the quantum dot light-emitting diode has good application prospect.
The quantum dot light-emitting diode structure comprises a cathode, an electron transport layer, a quantum dot light-emitting layer, a hole transport layer and an anode which are arranged in layers. Generally, the surface of a quantum dot in a quantum dot light-emitting layer contains a hydrophobic ligand, so that the quantum dot light-emitting layer has strong hydrophobicity; the electron transport layer is generally inorganic nanoparticles having polar groups on the surface, such as zinc oxide nanoparticles. Because the polarity difference between the quantum dot light-emitting layer and the electron transport layer is large, the compatibility between the quantum dot light-emitting layer and the electron transport layer is poor.
Disclosure of Invention
To solve the above technical problem, the present application provides a quantum dot light emitting diode to solve the problem of poor compatibility between a quantum dot light emitting layer and an electron transport layer.
According to one aspect of the present application, there is provided a quantum dot light emitting diode, comprising an anode, a hole transport layer, a quantum dot light emitting layer, an electron transport layer and a cathode, which are sequentially stacked; the quantum dot light-emitting layer contains an amphiphilic polymer.
In one embodiment, the surface of the quantum dots in the quantum dot light emitting layer are coated with a hydrophobic ligand. The hydrophobic ligand can be carboxylic acid, mercaptan or amine, and the existence of the hydrophobic ligand enables the quantum dot light-emitting layer to have certain hydrophobicity.
In one embodiment, the electron transport material of the electron transport layer is an inorganic nanoparticle.
The surface of the inorganic nanoparticles is connected with hydroxyl groups. The inorganic nanoparticles are generally prepared in a polar solvent, for example, zinc oxide-based nanoparticles are generally prepared in ethanol, such that hydroxyl groups are attached to the surface of the nanoparticles.
Preferably, the inorganic nanoparticles are zinc oxide-based nanoparticles including an oxygen element and a zinc element, and the zinc oxide-based nanoparticles may further include a lithium element, a sodium element, a potassium element, a magnesium element, a calcium element, an aluminum element, a gallium element, a sulfur element, a chlorine element, or the like.
In one embodiment, the amphiphilic polymer has a hydrophilic portion and a lipophilic portion, the amphiphilic polymer having a structural formula as shown in formula 1:
in the formula 1, the compound is shown in the specification,
in formula 1, the group Y1And a group Y3At least one of which is an oleophilic portion; n hydrophilic repeating structural units Y2A hydrophilic portion is formed; n is more than or equal to 4 and less than or equal to 22.
The amphiphilic polymer may have a structural formula as shown in formula 1-1, formula 1-2, formula 1-3, formula 1-4, or formula 1-5:
the compound of the formula 1-1,
in the formula 1-1, R2Is one of hydrogen atom, hydroxyl, hydroxymethyl, carboxyl and primary amino; r1And R3In which one is selected from substituted or unsubstituted C4-C22Aliphatic hydrocarbon group of (1), substituted or unsubstituted C4-C22With alicyclic hydrocarbon radicals, substituted or unsubstituted C6-C22One of the aromatic hydrocarbon groups of (1), the other being selected from one of a hydrogen atom, a hydroxyl group, a hydroxymethyl group, a carboxyl group and a primary amino group; n is more than or equal to 4 and less than or equal to 22;
the compound of the formula 1-2,
in the formula 1-2, R5、R6Each independently selected from one of a hydrogen atom, a hydroxyl group, a hydroxymethyl group, a carboxyl group and a primary amino group; r4、R7Wherein one is selected from substituted or unsubstituted C4-C22Aliphatic hydrocarbon group of (1), substituted or unsubstituted C4-C22With alicyclic hydrocarbon radicals, substituted or unsubstituted C6-C22Another is selected from one of a hydrogen atom, a hydroxyl group, a hydroxymethyl group, a carboxyl group and a primary amino group; n is more than or equal to 4 and less than or equal to 22;
the compound of the formula 1-3,
in the formulae 1 to 3, R9、R10Each independently selected from one of a hydrogen atom, a hydroxyl group, a hydroxymethyl group, a carboxyl group and a primary amino group; r8、R11Wherein one is selected from substituted or unsubstituted C4-C22Aliphatic hydrocarbon group of (1), substituted or unsubstituted C4-C22With alicyclic hydrocarbon radicals, substituted or unsubstituted C6-C22Another is selected fromOne of a hydrogen atom, a hydroxyl group, a hydroxymethyl group, a carboxyl group and a primary amino group; n is more than or equal to 4 and less than or equal to 22;
the compounds of the formulae 1 to 4,
in the formulae 1 to 4, R13Is one of hydrogen atom, hydroxyl, hydroxymethyl, carboxyl and primary amino; r12、R14Wherein one is selected from substituted or unsubstituted C4-C22Aliphatic hydrocarbon group of (1), substituted or unsubstituted C4-C22With alicyclic hydrocarbon radicals, substituted or unsubstituted C6-C22Another is selected from one of a hydrogen atom, a hydroxyl group, a hydroxymethyl group, a carboxyl group and a primary amino group; n is more than or equal to 4 and less than or equal to 22;
the compound of the formula 1-5,
in the formulae 1 to 5, R16Is one of hydrogen atom, hydroxyl, hydroxymethyl, carboxyl and primary amino; r15、R17Wherein one is selected from substituted or unsubstituted C4-C22Aliphatic hydrocarbon group of (1), substituted or unsubstituted C4-C22With alicyclic hydrocarbon radicals, substituted or unsubstituted C6-C22Another is selected from one of a hydrogen atom, a hydroxyl group, a hydroxymethyl group, a carboxyl group and a primary amino group; n is more than or equal to 4 and less than or equal to 22.
The term "substituted" in formula 1-1, formula 1-2, formula 1-3, formula 1-4, or formula 1-5 may also refer to a compound, group, or moiety in which at least one of its hydrogen atoms is replaced with a substituent selected from the group consisting of: hydroxyl (-OH), amino (-NRR ', wherein R and R' are independently hydrogen or C1-C6Alkyl), thiol groups (-SH), carboxylic acid groups (-COOH) or salts thereof (-C (═ O) OM, where M is an organic or inorganic cation), sulfonic acid groups (-SO)3H) Or a salt thereof (-SO)3M, wherein M is an organic or inorganic cation), a phosphate group (-PO)3H2) Or a salt thereof (-PO)3MH or-PO3M2Where M is an organic or inorganic cation), and combinations thereof. In this case, the substitution pattern of these substituents, the number of substituents, is well known to those skilled in the art to ensure the amphiphilicity of the amphiphilic polymer.
In one embodiment, the amphiphilic polymer may be one of polyoxyethylene (20) hexadecylamine, polyoxyethylene (10) octadecyl ether, polyoxyethylene (7) octylphenol ether, polyoxyethylene (4) n-octyl ether, polyethylene glycol (4) dodecyl ether, polyethylene glycol (10) octylphenol ether, polyethylene imine (15) tetradecylurea, dodecyl polyvinylpyrrolidone (20), and octadecyl polyimide (10). In the present application, in the above-mentioned amphiphilic polymer, the numerical value in "()" represents the degree of polymerization of the repeating structural unit, and for example, polyoxyethylene (10) octadecyl ether is an oxyethylene repeating unit, the degree of polymerization is equal to 10.
When the amphiphilic polymer is in the quantum dot light-emitting layer, the weight ratio of the amphiphilic polymer in the quantum dot light-emitting layer is between 0.1 and 5 percent.
In one embodiment, the hole transport layer is a multilayer, and the work function or the highest occupied molecular orbital of the hole transport layer increases toward a high energy level in a direction away from the anode. Thus, the difficulty of injecting holes from the anode into the quantum dot light-emitting layer can be effectively reduced. In one embodiment, the hole transport layer is two layers.
The application has the following beneficial effects: in the quantum dot light-emitting diode, the compatibility between the quantum dot light-emitting layer and the electron transport layer can be effectively improved by adding the amphiphilic polymer into the quantum dot light-emitting layer.
Drawings
Fig. 1 is a schematic structural diagram of a quantum dot light emitting diode according to an embodiment of the present application;
fig. 2 is a photograph showing the film formation of the zinc oxide nanoparticle layer in examples 1 to 5 in the present application;
fig. 3 is a photograph showing the film formation of the zinc oxide nanoparticle layer in comparative example 1 in the present application;
fig. 4 is a current efficiency-luminance curve of the quantum dot light emitting diode in example 4 and comparative example 1;
fig. 5 is an external quantum efficiency-luminance curve of the quantum dot light emitting diodes in example 4 and comparative example 1.
Detailed Description
The technical solutions in the examples of the present application will be described in detail below with reference to the embodiments of the present application. It should be noted that the described embodiments are only some embodiments of the present application, and not all embodiments.
In an exemplary embodiment of the present application, as shown in fig. 1, a quantum dot light emitting diode 10 includes an anode 11, a hole transport layer 12, a quantum dot light emitting layer 13, an electron transport layer 14, and a cathode 15, which are sequentially stacked, and the anode 11 is disposed on a substrate 110. The quantum dot light-emitting layer 13 includes quantum dots 131 and an amphiphilic polymer 132.
In the present application, the quantum dot material 131 may be at least one selected from a group IIB-VIA compound, a group IVA-VIA compound, a group IIIA-VA compound, a group IB-VIA compound, or a perovskite. Such as indium phosphide quantum dots, cadmium selenide quantum dots, and the like.
In the quantum dot light-emitting layer 13, the quantum dots 131 are uniformly mixed with the amphiphilic polymer 132, and the amphiphilic polymer 132 may be more distributed on the side close to the electron transport layer 14.
Example 1
The quantum dot light-emitting diode is provided, and the preparation method of the quantum dot light-emitting diode comprises the following steps:
providing an anode, wherein the anode is an ITO electrode arranged on a glass substrate;
spin coating PEDOT on the anode: a solution of PSS, a first layer of the hole transport layer is prepared;
in the PEDOT: spin coating a solution of TFB on the PSS layer to prepare a second layer of the hole transport layer;
an organic solution containing red light cadmium selenide quantum dots and an amphiphilic polymer is spin-coated on the TFB layer, and a quantum dot light-emitting layer is obtained after drying;
printing a solution of zinc oxide nano particles on the quantum dot light-emitting layer, and drying to obtain a zinc oxide nano particle layer, namely an electron transport layer;
and preparing an Al electrode on the electron transport layer to obtain the cathode.
The amphiphilic polymer is polyoxyethylene (20) hexadecylamine, and the weight ratio of the amphiphilic polymer in the quantum dot light-emitting layer is 0.2%.
Example 2
In example 2, a method for manufacturing a quantum dot light emitting diode was substantially the same as that of example 1, except that the amphiphilic polymer was polyethylene glycol (4) dodecyl ether, and the weight ratio of the amphiphilic polymer in the quantum dot light emitting layer was 0.4%.
Example 3
In example 3, a method for producing a quantum dot light emitting diode was substantially the same as that in example 1, except that the amphiphilic polymer was polyethyleneimine (15) tetradecyl urea, and the weight ratio of the amphiphilic polymer in the quantum dot light emitting layer was 0.8%.
Example 4
In example 4, a method for manufacturing a quantum dot light emitting diode was substantially the same as that of example 1, except that the amphiphilic polymer was dodecyl polyvinylpyrrolidone (20), and the weight ratio of the amphiphilic polymer in the quantum dot light emitting layer was 1%.
Example 5
In example 5, the method for producing a quantum dot light-emitting diode was substantially the same as that in example 1, except that the amphiphilic polymer was octadecyl polyimide (10), and the weight ratio of the amphiphilic polymer in the quantum dot light-emitting layer was 1.5%.
Comparative example 1
The quantum dot light-emitting diode is provided, and the preparation method of the quantum dot light-emitting diode comprises the following steps:
providing an anode, wherein the anode is an ITO electrode arranged on a glass substrate;
spin coating PEDOT on the anode: a solution of PSS, a first layer of the hole transport layer is prepared;
in the PEDOT: spin coating a solution of TFB on the PSS layer to prepare a second layer of the hole transport layer;
an organic solution containing red light cadmium selenide quantum dots is spin-coated on the TFB layer, and a quantum dot light-emitting layer is obtained after drying;
printing a solution of zinc oxide nano particles on the quantum dot light-emitting layer, and drying to obtain a zinc oxide nano particle layer, namely an electron transport layer;
and preparing an Al electrode on the electron transport layer to obtain the cathode.
In the preparation process of the quantum dot light emitting diode, the film formation uniformity of the zinc oxide nanoparticle layers in examples 1 to 5, and comparative example 1 was observed.
In examples 1 to 5, photographs showing the film formation of the zinc oxide nanoparticle layer are shown in fig. 2, and (a) to (e) in fig. 2 represent examples 1 to 5, respectively, and it is clear from fig. 2 that the film formation uniformity of the zinc oxide nanoparticle layer is good.
Fig. 3 is a photograph showing the film formation of the zinc oxide nanoparticle layer in comparative example 1, and it can be seen that the film formation uniformity of the zinc oxide nanoparticle layer was poor.
Compared with comparative example 1, in the quantum dot light emitting diodes prepared in examples 1 to 5, after the zinc oxide nanoparticle layer was printed on the quantum dot light emitting layer, the film formation uniformity of the zinc oxide nanoparticle layer obtained by drying was better.
The electroluminescent properties of the quantum dot light emitting diodes in example 4 (the quantum dot light emitting layer added with the amphiphilic polymer) and comparative example 1 (the quantum dot light emitting layer not added with the amphiphilic polymer) were tested. As shown in fig. 4, which is a current efficiency-luminance curve of the quantum dot light emitting diode, it can be seen that the maximum current efficiency (Max CE) of the quantum dot light emitting diode in example 4 is improved from 6.32cd/a to 7.07cd/a compared to that in comparative example 1. FIG. 5 shows the external quantum efficiency-luminance curve of a quantum dot light emitting diode, as can be seen from FIG. 5, in comparison withIn example 1, compared with the quantum dot light emitting diode in example 4, the luminance (L @ Max EQE) at the maximum external quantum efficiency is 3842cd/m2Lifting to 5896cd/m2The maximum external quantum efficiency (MaxEQE) is increased from 5.78% to 6.41%.
After the amphiphilic polymer is added into the quantum dot light-emitting layer, the maximum current efficiency, the maximum external quantum efficiency and the brightness value under the maximum external quantum efficiency of the quantum dot light-emitting diode are all obviously improved. The improvement of the parameters shows that the electron-hole injection balance in the luminous layer of the quantum dot light-emitting diode is better, and the electron-hole injection efficiency is better.
Although the present disclosure has been described and illustrated in greater detail by the inventors, it should be understood that modifications and/or alterations to the above-described embodiments, or equivalent substitutions, will be apparent to those skilled in the art without departing from the spirit of the disclosure, and that no limitations to the present disclosure are intended or should be inferred therefrom.
Claims (10)
1. A quantum dot light-emitting diode is characterized by comprising an anode, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a cathode which are sequentially stacked; the quantum dot light-emitting layer contains an amphiphilic polymer.
2. The quantum dot light-emitting diode of claim 1, wherein the surface of the quantum dots in the quantum dot light-emitting layer are coated with a hydrophobic ligand.
3. The quantum dot light-emitting diode of claim 1, wherein the electron transport material of the electron transport layer is an inorganic nanoparticle.
4. The qd-led of claim 3, wherein the inorganic nanoparticles have hydroxyl groups attached to the surface.
5. The quantum dot light-emitting diode of claim 1, wherein the amphiphilic polymer has a hydrophilic portion and an oleophilic portion, and wherein the amphiphilic polymer has a structural formula as shown in formula 1:
in the formula 1, the compound is shown in the specification,
in formula 1, the group Y1And a group Y3At least one of which is an oleophilic portion; n hydrophilic repeating structural units Y2A hydrophilic portion is formed; n is more than or equal to 4 and less than or equal to 22.
6. The quantum dot light-emitting diode of claim 5, wherein the amphiphilic polymer has a structural formula as shown in formula 1-1, formula 1-2, formula 1-3, formula 1-4, or formula 1-5:
the compound of the formula 1-1,
in the formula 1-1, R2Is one of hydrogen atom, hydroxyl, hydroxymethyl, carboxyl and primary amino; r1And R3，Wherein one is selected from substituted or unsubstituted C4-C22Aliphatic hydrocarbon group of (1), substituted or unsubstituted C4-C22With alicyclic hydrocarbon radicals, substituted or unsubstituted C6-C22One of the aromatic hydrocarbon groups of (1), the other being selected from one of a hydrogen atom, a hydroxyl group, a hydroxymethyl group, a carboxyl group and a primary amino group; n is more than or equal to 4 and less than or equal to 22;
the compound of the formula 1-2,
in the formula 1-2, R5、R6Each independently selected from one of a hydrogen atom, a hydroxyl group, a hydroxymethyl group, a carboxyl group and a primary amino group; r4、R7One is selected fromSubstituted or unsubstituted C4-C22Aliphatic hydrocarbon group of (1), substituted or unsubstituted C4-C22With alicyclic hydrocarbon radicals, substituted or unsubstituted C6-C22Another is selected from one of a hydrogen atom, a hydroxyl group, a hydroxymethyl group, a carboxyl group and a primary amino group; n is more than or equal to 4 and less than or equal to 22;
the compound of the formula 1-3,
in the formulae 1 to 3, R9、R10Each independently selected from one of a hydrogen atom, a hydroxyl group, a hydroxymethyl group, a carboxyl group and a primary amino group; r8、R11Wherein one is selected from substituted or unsubstituted C4-C22Aliphatic hydrocarbon group of (1), substituted or unsubstituted C4-C22With alicyclic hydrocarbon radicals, substituted or unsubstituted C6-C22Another is selected from one of a hydrogen atom, a hydroxyl group, a hydroxymethyl group, a carboxyl group and a primary amino group; n is more than or equal to 4 and less than or equal to 22;
the compounds of the formulae 1 to 4,
in the formulae 1 to 4, R13Is one of hydrogen atom, hydroxyl, hydroxymethyl, carboxyl and primary amino; r12、R14Wherein one is selected from substituted or unsubstituted C4-C22Aliphatic hydrocarbon group of (1), substituted or unsubstituted C4-C22With alicyclic hydrocarbon radicals, substituted or unsubstituted C6-C22Another is selected from one of a hydrogen atom, a hydroxyl group, a hydroxymethyl group, a carboxyl group and a primary amino group; n is more than or equal to 4 and less than or equal to 22;
the compound of the formula 1-5,
in the formulae 1 to 5, R16Is one of hydrogen atom, hydroxyl, hydroxymethyl, carboxyl and primary amino; r15、R17Wherein one is selected from substituted or unsubstituted C4-C22Aliphatic hydrocarbon group of (1), substituted or unsubstituted C4-C22With alicyclic hydrocarbon radicals, substituted or unsubstituted C6-C22Another is selected from one of a hydrogen atom, a hydroxyl group, a hydroxymethyl group, a carboxyl group and a primary amino group; n is more than or equal to 4 and less than or equal to 22.
7. The quantum dot light-emitting diode of claim 6, wherein the amphiphilic polymer is one of polyoxyethylene (20) hexadecylamine, polyoxyethylene (10) octadecyl ether, polyoxyethylene (7) octylphenol ether, polyoxyethylene (4) n-octyl ether, polyethylene glycol (4) dodecyl ether, polyethylene glycol (10) octylphenol ether, polyethyleneimine (15) tetradecylurea, dodecylpolyvinylpyrrolidone (20), and octadecylpolyimide (10).
8. The quantum dot light-emitting diode of claim 1, wherein the weight ratio of the amphiphilic polymer in the quantum dot light-emitting layer is between 0.1% and 5%.
9. The quantum dot light-emitting diode of claim 1, wherein the hole transport layer is a multilayer, and a work function or a highest occupied molecular orbital of the hole transport layer increases toward a high energy level in a direction away from the anode.
10. The quantum dot light-emitting diode of claim 1, wherein the hole transport layer is two layers.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113174252A (en) * | 2021-04-30 | 2021-07-27 | 华中科技大学 | CdSe quantum dot and photoluminescence regulation method and application thereof |
| WO2022143569A1 (en) * | 2020-12-31 | 2022-07-07 | Tcl科技集团股份有限公司 | Quantum dot light-emitting diode and preparation method therefor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022143569A1 (en) * | 2020-12-31 | 2022-07-07 | Tcl科技集团股份有限公司 | Quantum dot light-emitting diode and preparation method therefor |
| CN113174252A (en) * | 2021-04-30 | 2021-07-27 | 华中科技大学 | CdSe quantum dot and photoluminescence regulation method and application thereof |
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Application publication date: 20200410 |