CN110993722A - 一种晶体硅太阳电池的硼扩散背钝化工艺 - Google Patents
一种晶体硅太阳电池的硼扩散背钝化工艺 Download PDFInfo
- Publication number
- CN110993722A CN110993722A CN201910977470.6A CN201910977470A CN110993722A CN 110993722 A CN110993722 A CN 110993722A CN 201910977470 A CN201910977470 A CN 201910977470A CN 110993722 A CN110993722 A CN 110993722A
- Authority
- CN
- China
- Prior art keywords
- diffusion
- nitrogen
- temperature
- flow
- keeping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 title claims abstract description 40
- 238000002161 passivation Methods 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims abstract description 18
- 230000008569 process Effects 0.000 title claims abstract description 17
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims description 12
- 229910052796 boron Inorganic materials 0.000 title claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 26
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 claims abstract description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000001301 oxygen Substances 0.000 claims abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 9
- 238000000137 annealing Methods 0.000 claims abstract description 5
- 238000001816 cooling Methods 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 230000006872 improvement Effects 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000000265 homogenisation Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 101100409194 Rattus norvegicus Ppargc1b gene Proteins 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明涉及太阳能电池生产领域,具体是一种新型太阳能晶硅电池技术(PERC)的背钝化工艺改进及提升。步骤一、扩散,保持载舟温度,按一定流量的氮气、高浓度的三溴化硼和氧气进行扩散;步骤二、均化过程,保持扩散时温度,按照氮气保持一定流量进行均化处理;步骤三、推进,保持氮气流量进行推进工艺;步骤四、退火处理;步骤五、降温完成扩散过程。本发明实现高浓度浅层扩散,并提高了扩散的均匀性,提高背钝化的致密性,提高太阳能电池的转换效率。
Description
技术领域
本发明涉及太阳能电池生产领域,具体是一种新型太阳能晶硅电池技术(PERCT)的背钝化工艺改进及提升。
背景技术
随着常规的化石能源的日益消耗殆尽,在现有的可持续能源中,太阳能作为一种清洁和最有潜力的替代能源越来越受到人们的重视。太阳能发电装置又称为太阳能电池或光伏电池,可以将太阳能直接转换成电能,当太阳光照射在半导体P-N结上时,会形成新的空穴-电子对,在P-N结电场的作用下,空穴由N区流向P区,电子由P区流向N区,接通电路后就形成电流。传统的太阳能电池一般只采用正面钝化技术,但随着当前对晶硅太阳能电池光电转换效率的要求越来越高,人们开始研究高效背钝化太阳电池技术,特别是采用P型基片背钝化工艺制备的PERC(passivated emitter and rear side cell)电池已成为当前研究的热点。其中背钝化工艺制备PERC电池的核心工艺为背钝化工艺。现有的硼(B)扩散背钝化工艺步骤常见的主要包括:步骤一、扩散,将硅片放入扩散炉中,保持载舟温度为800~950℃,按照氮气流量6~8L/min、三溴化硼流量5~10l/min、氧气流量3~5L/min的标准进行扩散,时间为8~15min;步骤二、推进过程,保持扩散时温度,按照氮气流量4L/min进行均化处理8~15min;步骤三、氧化过程,保持温度为930~960℃,保持氧气流量10l/min,处理20~30min;步骤四、降温至800~850℃,通氮气完成扩散过程,氮气流量4L/min。但现有的硼(B)扩散背钝化工艺中还存在着扩散方阻不均,钝化层致密性不足,钝化效果不佳,电池转换效率不高等缺憾。
发明内容
本发明索要解决的技术问题是:经硼扩散配方的步骤及参数改进后,有效改善电池方阻的均匀性,提高背钝化的致密性,提高电池片转换效率。
本发明所采用的技术方案是
步骤一、扩散,将硅片放入扩散炉中,保持载舟温度为800~930℃,按照氮气流量6L/min标准,保持10~20min,而后以2~10℃/min的速率升温至900~960℃进行扩散,按照氮气流量6~8L/min、三溴化硼流量5~10l/min、氧气流量4L/min的标准进行扩散,时间为12min;步骤二、均化过程,保持扩散时温度,按照氮气流量6L/min进行均化处理2min;步骤三、推进,保持温度为960℃,开始推进工艺,保持氮气流量为6L/min,氧气流量4l/min,推进10min;步骤四、退火处理,以960℃为基础温度,保持10min;步骤五、以5℃/min的速率降温至800~850℃,通氮气完成扩散过程,氮气流量5~10L/min。
本发明的工作机理是:
本发明的工作机理是:采用高扩散温度使更多的硼进入硅片的表面,提升硅片表面的硼浓度;在扩散环节结束后,通入2分钟氮气,这个步骤可以增加方阻分布的均匀性,然后采用一步推进和一步退火处理,使硅片表面的硼浓度分布更加均匀,减少了方阻的波动范围,提升硼扩散层的钝化效果,减少电池背面光生少数载流子的复合,降低复合速率,进而提高开路电压,使转换效率明显提升。
本发明在提高了扩散的均匀性的同时,提升硼扩散层的钝化效果,减少电池背面光生少数载流子的复合,明显提升转换效率。
具体实施方式
本发明在原生产工艺基础上进行了改进。
步骤一、扩散,将硅片放入扩散炉中,保持载舟温度为930℃,按照氮气流量6L/min标准,保持20min,而后以5℃/min的速率升温至960℃进行扩散,按照氮气流量8L/min、三溴化硼流量8l/min、氧气流量4L/min的标准进行扩散,时间为12min;步骤二、均化过程,保持扩散时温度,按照氮气流量6L/min进行均化处理2min;步骤三、推进,保持温度为960℃,开始推进工艺,保持氮气流量为6L/min,氧气流量4l/min,推进10min;步骤四、退火处理,以960℃为基础温度,保持10min;步骤五、以5℃/min的速率降温至830℃,通氮气完成扩散过程,氮气流量8L/min。
表一:工艺改进前与改进后的电池片转化效率对比
片数 | Ncell | Uoc | Isc | Rs | Rsh | FF | |
改进前 | 1049 | 19.15% | 0.640 | 9.342 | 0.0035 | 119.53 | 78.0 |
改进后 | 1064 | 19.36% | 0.644 | 9.352 | 0.0032 | 125.24 | 78.2 |
说明:从表一的对比数值可以看出,经硼扩散配方的步骤及参数改进后其方阻的均匀性和钝化的致密性有了提升,反映在开路电压提升了0.004V;改进后电池片效率提高约有0.21%,反映了电池品质的提升。
本专利通过对扩散生产工艺的调节,优化了扩散工艺,对提高晶硅电池转换效率起到了明显效果,运用调整后的工艺配方可以使电池片平均效率提高0.21%,效益明显。
Claims (1)
1.一种晶体硅太阳电池的硼扩散背钝化工艺,其特征在于,包括如下步骤:
步骤一、扩散,将硅片放入扩散炉中,保持载舟温度为800~930℃,按照氮气流量6L/min标准,保持10~20min,而后以2~10℃/min的速率升温至900~960℃进行扩散,按照氮气流量6~8L/min、三溴化硼流量5~10l/min、氧气流量4L/min的标准进行扩散,时间为12min;步骤二、均化过程,保持扩散时温度,按照氮气流量6L/min进行均化处理2min;步骤三、推进,保持温度为960℃,开始推进工艺,保持氮气流量为6L/min,氧气流量4l/min,推进10min;步骤四、退火处理,以960℃为基础温度,保持10min;步骤五、以5℃/min的速率降温至800~850℃,通氮气完成扩散过程,氮气流量5~10L/min。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910977470.6A CN110993722A (zh) | 2019-10-12 | 2019-10-12 | 一种晶体硅太阳电池的硼扩散背钝化工艺 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910977470.6A CN110993722A (zh) | 2019-10-12 | 2019-10-12 | 一种晶体硅太阳电池的硼扩散背钝化工艺 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN110993722A true CN110993722A (zh) | 2020-04-10 |
Family
ID=70081897
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910977470.6A Pending CN110993722A (zh) | 2019-10-12 | 2019-10-12 | 一种晶体硅太阳电池的硼扩散背钝化工艺 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN110993722A (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103603053A (zh) * | 2013-11-15 | 2014-02-26 | 中电电气(南京)光伏有限公司 | 一种制备晶体硅太阳能电池的方法 |
CN105261670A (zh) * | 2015-08-31 | 2016-01-20 | 湖南红太阳光电科技有限公司 | 晶体硅电池的低压扩散工艺 |
WO2016112757A1 (zh) * | 2015-01-15 | 2016-07-21 | 中利腾晖光伏科技有限公司 | 一种n型双面电池及其制作方法 |
CN109559982A (zh) * | 2018-10-23 | 2019-04-02 | 开封大学 | 一种n型晶体硅太阳电池的硼扩散工艺 |
-
2019
- 2019-10-12 CN CN201910977470.6A patent/CN110993722A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103603053A (zh) * | 2013-11-15 | 2014-02-26 | 中电电气(南京)光伏有限公司 | 一种制备晶体硅太阳能电池的方法 |
WO2016112757A1 (zh) * | 2015-01-15 | 2016-07-21 | 中利腾晖光伏科技有限公司 | 一种n型双面电池及其制作方法 |
CN105261670A (zh) * | 2015-08-31 | 2016-01-20 | 湖南红太阳光电科技有限公司 | 晶体硅电池的低压扩散工艺 |
CN109559982A (zh) * | 2018-10-23 | 2019-04-02 | 开封大学 | 一种n型晶体硅太阳电池的硼扩散工艺 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
NL2022765B1 (en) | Step-by-Step Doping Method of Phosphorous for High-efficiency and Low-cost Crystalline Silicon Cell | |
CN109449246B (zh) | 一种硅晶体片磷扩散方法 | |
CN111162145A (zh) | 具有选择性发射极结构的钝化接触太阳能电池及其制备方法 | |
CN110010721B (zh) | 一种基于se的碱抛光高效perc电池工艺 | |
CN101937940B (zh) | 印刷磷源单步扩散法制作选择性发射结太阳电池工艺 | |
JP6741867B2 (ja) | P型perc両面受光型太陽電池及びそのモジュール、システム並びに製造方法 | |
CN102191562B (zh) | 一种n型晶体硅太阳电池的硼扩散方法 | |
CN109786511B (zh) | 一种适用于选择性发射极的扩散方法 | |
CN111384210B (zh) | 一种perc叠加se的高开压扩散高方阻工艺 | |
CN103050581A (zh) | 一种激光掺杂选择性发射结的扩散工艺 | |
CN110943143A (zh) | 用于制造具有异质结和发射极扩散区的光伏太阳能电池的方法 | |
CN102130211B (zh) | 一种改善太阳能电池表面扩散的方法 | |
CN111739794B (zh) | 硼扩散方法、太阳能电池及其制作方法 | |
CN102097523A (zh) | 双次扩散选择性发射结硅太阳能电池的扩散工艺 | |
CN109860312B (zh) | 用于p型晶体硅太阳能电池硼扩散背钝化工艺 | |
CN108110090B (zh) | 一种n型双面电池制备方法 | |
EP4060752A1 (en) | Solar cell stack passivation structure and preparation method therefor | |
CN112086541B (zh) | N型太阳能电池的后处理方法 | |
CN113594299A (zh) | 一种n型硅片p++结构的制作工艺 | |
CN116053353A (zh) | 硼掺杂选择性发射极的制备方法及n型晶体硅太阳能电池 | |
CN110739366B (zh) | 一种修复perc太阳能电池背膜激光开槽损伤的方法 | |
CN110993722A (zh) | 一种晶体硅太阳电池的硼扩散背钝化工艺 | |
CN110931598A (zh) | 一种二次退火的单晶硅se-perc电池的制造方法 | |
CN116314436A (zh) | 一种采用湿法氧化进行高温硼扩散的方法 | |
KR101383426B1 (ko) | 양면수광형 태양전지의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20200410 |
|
WD01 | Invention patent application deemed withdrawn after publication |