CN110970340A - Flexible InP HBT device and preparation method thereof - Google Patents
Flexible InP HBT device and preparation method thereof Download PDFInfo
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
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Abstract
The invention discloses a flexible InP HBT device and a preparation method thereof, wherein the device comprises a flexible substrate and a bonding layer formed on the flexible substrate and bonded with the flexible substrate, a stop layer is combined on the bonding layer, and the InP HBT device is arranged on the stop layer. The preparation method comprises the steps of firstly, growing an InP HBT epitaxial structure with a stop layer on an InP substrate in a forward direction, then completing device and circuit preparation on the InP HBT epitaxial wafer, then spin-coating a reversible temporary bonding material on the front surface of the temporary slide, carrying out temporary bonding on the InP HBT epitaxial wafer with the circuit technology and the front surface of the temporary slide, selectively removing the back surface of the InP substrate until the stop layer is formed, manufacturing a bonding material on the back surface of the InP HBT epitaxial layer, bonding the back surface of the InP HBT epitaxial layer with the flexible substrate, and finally separating the InP HBT epitaxial layer from the temporary slide to obtain the flexible InP HBT device.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a flexible InP HBT device and a preparation method thereof.
Background
The InP HBT has excellent frequency characteristics, good device consistency and breakdown characteristics, is the best choice for realizing ultrahigh-speed and ultrahigh-frequency circuits, and has important application prospects in the aspects of wireless communication, high-frequency transmission and the like. Generally, an InP HBT device is fabricated on a rigid InP substrate epitaxial wafer, and the InP substrate is extremely fragile, which restricts the development of the InP HBT device to a certain extent. If the InP HBT device has the flexible characteristics of stretchability, extensibility and the like, the InP HBT device has greater flexibility, can adapt to different complex working environments such as non-planes, small volumes and the like, and meets the development requirements of miniaturization, high integration and intellectualization of electronic information equipment in the future.
In response to the requirement for flexibility of an electronic device with a rigid substrate, the mainstream method in the world is to thin the rigid substrate to make the rigid substrate have flexible characteristics such as bending and stretching, and then directly attach the rigid substrate to a flexible substrate made of a polymer such as PDMS, PI, PET, etc. There are many problems to be solved in this manner, such as the problems of the interface contact between the flexible substrate and the semiconductor transistor device is not tight, the interface properties are not stable, and the like, which leads to performance degradation and even failure of the device on the flexible substrate and under a large deformation environment. In addition, all the ultrahigh-speed and ultrahigh-frequency flexible electronic devices disclosed and reported at present have smaller preparation areas, a wafer-level flexible transistor device cannot be prepared at one time, and the phenomenon of breakage is easy to occur in the transfer process.
The invention provides a flexible InP HBT (heterojunction bipolar transistor) super-high-speed device and a preparation method thereof, which are used for realizing the preparation of a wafer-level high-performance flexible InP HBT super-high-speed and ultrahigh-frequency device in the modes of epitaxial layer stripping and low-temperature heterogeneous bonding transfer and have the flexible characteristics of good flexibility, ductility and the like. The preparation method is compatible with the existing compound semiconductor process and micro-nano processing process, has batch preparation potential, and lays an important foundation for high-frequency and high-speed development of flexible electronic devices.
Disclosure of Invention
Aiming at the flexibility requirements of InP HBT-based ultra-high-speed and ultra-high-frequency devices, the invention aims to provide a flexible InP HBT device and a preparation method thereof, which are used for solving the problems of serious device performance degradation, difficulty in large-area batch preparation and the like in the flexibility process of the traditional rigid substrate electronic device and preparing a high-performance wafer-level flexible InP HBT device
The technical solution for realizing the purpose of the invention is as follows:
a flexible InP HBT device comprises a flexible substrate and a bonding layer formed on the flexible substrate in a bonding mode, wherein a stop layer is combined on the bonding layer, and an InP HBT device is arranged on the stop layer.
Further, the flexible InP HBT device, the flexible substrate including but not limited to flexible metal, polyimide, polyethylene glycol, or polyethylene terephthalate; the bonding layer includes, but is not limited to, a metal or a polymer.
The preparation method of the flexible InP HBT device comprises the following steps;
step 2, completing the preparation of devices and circuits on the InP epitaxial wafer with the stop layer;
step 3, spin-coating a reversible temporary bonding material on the front surface of the temporary slide;
step 4, carrying out temporary bonding on the InP HBT epitaxial wafer subjected to the circuit process and the front surface of the temporary slide glass oppositely;
step 5, selectively removing the back of the InP substrate until reaching the stop layer;
step 7, bonding the back surface of the InP HBT epitaxial layer with the flexible substrate;
and 8, separating the InP HBT epitaxial layer from the temporary slide to obtain the flexible InP HBT device.
Further, in the preparation method of the flexible InP HBT device, in the step 2, the stop layer is made of InGaAs or InGaP, and the InP HBT epitaxial structure is InP/InGaAs/InP structure.
Further, in the preparation method of the flexible InP HBT device, in the step 3, the temporary slide is one of sapphire, a silicon wafer, a silicon carbide wafer or an aluminum nitride sheet; the reversible temporary bonding material comprises but is not limited to photoresist, adhesive or high-temperature wax, and the bonding degree of the reversible temporary bonding material is reduced through photolysis, pyrolysis and the like, so that the inorganic semiconductor film can be separated from the temporary slide.
Further, in the preparation method of the flexible InP HBT device, in the step 4, the temporary bonding temperature is 100-350 ℃, the pressure is 100-5000 MPa, and the time is 5-30 minutes.
Further, in the preparation method of the flexible InP HBT device, the selective removal method for the back surface of the InP substrate in step 5 includes, but is not limited to, any one or a combination of mechanical grinding, mechanical polishing, chemical polishing, wet etching, and dry etching.
Further, in the method for manufacturing a flexible InP HBT device, the bonding material in step 6 includes, but is not limited to, metal or polymer.
Further, in the preparation method of the flexible InP HBT device, the bonding temperature in the step 7 is RT-300 ℃, the pressure is 1000MPa-8000MPa, and the time is 10-180 minutes.
Further, in the preparation method of the flexible InP HBT device, in step 8, the method for separating the InP HBT epitaxial layer from the temporary carrier includes, but is not limited to, photolysis or pyrolysis.
Compared with the prior art, the invention has the following remarkable advantages: the method has the advantages that the method is compatible with the existing compound semiconductor process and micro-nano processing process through epitaxial layer stripping and low-temperature heterogeneous bonding transfer, has batch preparation potential, solves the problems of serious device performance degradation, difficulty in large-area batch preparation and the like in the flexible preparation process of the traditional rigid substrate semiconductor electronic device, has batch preparation potential, and lays a foundation for the miniaturization, integration and intelligent development of the electronic device.
Drawings
Fig. 1 is a schematic view of an InP substrate.
Fig. 2 is a schematic diagram of an InP HBT epitaxial layer with a stop layer forward-epitaxial on an InP substrate.
FIG. 3 is a schematic diagram of an InP device and circuit fabrication.
Fig. 4 is a schematic diagram of temporary bonding of an InP HBT epitaxial wafer and a temporary carrier wafer to complete the circuit process.
Fig. 5 is a schematic diagram of selective removal of the InP substrate backside.
Fig. 6 is a schematic diagram of an InP HBT epitaxial layer backside spin-on bonding material.
Figure 7 is a schematic diagram of the bonding of the backside of the InP HBT epitaxial layer to the flexible substrate.
Figure 8 is a schematic diagram of the InP HBT epitaxial layer separated from the temporary carrier.
In FIGS. 1-8: the structure comprises an InP substrate 1, an InP HBT epitaxial layer 2, a stop layer 3, an InP HBT device and a circuit structure 4, a temporary bonding material 5, a temporary bonding slide 6, a bonding material 7 and a flexible substrate 8.
The specific implementation mode is as follows:
the technical scheme of the invention is further described in the following with the accompanying drawings.
A flexible InP HBT device and a preparation method thereof comprise the following steps:
Step 2, completing the preparation of the device and the ultra-high speed circuit on the InP HBT epitaxial wafer with the stop layer: and (3) completing the preparation of the device and the circuit by the processes of photoetching, evaporation, etching, deposition and the like on the front surface of the InP HBT epitaxial wafer with the stop layer, as shown in figure 3.
Step 3, spin coating a reversible temporary bonding material on the front surface of the temporary slide: the temporary slide can be a rigid substrate such as sapphire, silicon carbide or aluminum nitride, the reversible temporary bonding material can be one of photoresist, adhesive and high-temperature wax, the adhesion degree with the temporary slide is reversible under a certain condition, the thickness of the temporary bonding material is 10-50 mu m, the spin-coating rotating speed is set to be 1000-5000 r/min, the spin-coating time is 30-1 min, the temporary slide coated with the second temporary bonding material is placed on a hot plate with the front side facing upwards for pre-baking, the temperature of the hot plate is set to be 100-200 ℃, and the time is 1-5 min, as shown in fig. 4.
And 4, carrying out temporary bonding on the InP HBT epitaxial wafer subjected to the circuit process and the front surface of the temporary slide glass oppositely: the front sides of the InP HBT epitaxial wafer and the temporary slide glass which are subjected to the circuit process are oppositely attached together, and the InP HBT epitaxial wafer and the temporary slide glass are placed into a wafer bonding machine for temporary bonding, wherein the bonding temperature is set at 100-350 ℃, the pressure is 100-5000 MPa, and the bonding time is 5-30 minutes, as shown in figure 5.
And 5, selectively removing the back of the InP substrate until the stop layer: thinning the InP epitaxial wafer substrate by one or a combination of several thinning methods, such as mechanical grinding, mechanical polishing, chemical polishing, wet etching, dry etching, and the like, and removing the substrate until the stop layer is exposed on the surface, as shown in fig. 6.
And 7, bonding the back surface of the InP HBT epitaxial layer with the flexible substrate: the back surface of the InP HBT epitaxial wafer and the flexible substrate are attached together and placed into a bonding machine for bonding, the temperature is RT-300 ℃, the pressure is 1000MPa-8000MPa, and the time is 10-180 minutes, as shown in figure 8.
And 8, separating the InP HBT epitaxial layer from the temporary slide to obtain a flexible InP HBT device: and separating the bonded structure from a temporary slide by photolysis or pyrolysis and the like to obtain the flexible InP HBT device.
The present invention is further illustrated by the following examples.
Example 1
A flexible InP HBT device and a preparation method thereof comprise the following steps:
And 2, completing the preparation of the device and the ultra-high speed circuit on the front surface of the InP HBT epitaxial layer through photoetching, evaporation, etching, deposition and other processes.
And 3, spin-coating a temporary bonding material adhesive with the thickness of 25 microns on the front surface of the temporary silicon carbide slide, wherein the spin-coating rotation speed is 3000 r/min, the spin-coating time is 45s, placing the temporary silicon carbide slide coated with the temporary bonding material with the front surface facing upwards on a hot plate for pre-baking, and setting the temperature of the hot plate to be 110 ℃ and the time to be 2 minutes.
And 4, relatively pasting the InP epitaxial wafer after the circuit process and the front surface of the silicon carbide temporary slide together, and placing the InP epitaxial wafer and the silicon carbide temporary slide into a wafer sticking machine for temporary bonding, wherein the bonding temperature is set at 190 ℃, the pressure is 200MPa, and the bonding time is 20 minutes.
And 5, thinning the InP HBT epitaxial wafer supported by the silicon carbide slide glass to 100 microns from the back by mechanical grinding, and then putting the InP HBT epitaxial wafer into wet etching solution for etching until the InP substrate is completely removed and the InGaAs stop layer is exposed.
And 6, spin-coating a BCB polymer material on the back of the InP HBT epitaxial layer which takes a silicon carbide slide as a support, wherein the spin-coating rotation speed is 2000 rpm, the spin-coating time is 60s, and then putting the substrate into a bonding machine for precuring.
And 7, bonding the back surface of the InP HBT epitaxial wafer supported by the silicon carbide slide with the PI flexible substrate in a bonding machine at the bonding temperature of 180 ℃ and the pressure of 1000MPa for 60 minutes.
And 8, placing the bonded structure formed by the silicon carbide slide, the ultrathin InP HBT circuit and the flexible PI substrate on a heating table for heating at 200 ℃, separating the silicon carbide slide by a thermal sliding stripping method, and cleaning by using a degumming agent, acetone and alcohol to obtain the flexible InP HBT device.
Example 2
A flexible InP HBT device and a preparation method thereof comprise the following steps:
And 2, completing the preparation of the device and the ultra-high speed circuit on the front surface of the InP HBT epitaxial layer through photoetching, evaporation, etching, deposition and other processes.
And 3, spin-coating a temporary bonding material adhesive with the thickness of 25 microns on the front surface of the sapphire temporary slide, wherein the spin-coating rotation speed is 3000 r/min, the spin-coating time is 45s, placing the sapphire temporary slide coated with the temporary bonding material with the front surface facing upwards on a hot plate for pre-baking, and setting the temperature of the hot plate to be 110 ℃ and the time to be 2 minutes.
And 4, relatively pasting the InP epitaxial wafer after the circuit process and the front surface of the sapphire temporary slide together, and placing the InP epitaxial wafer and the sapphire temporary slide into a wafer sticking machine for temporary bonding, wherein the bonding temperature is set at 250 ℃, the pressure is 5000MPa, and the bonding time is 30 minutes.
And 5, thinning the InP HBT epitaxial wafer supported by the sapphire temporary slide glass to 100 microns from the back by mechanical grinding, and then putting the InP HBT epitaxial wafer into wet etching solution for etching until the InP substrate is completely removed and the InGaAs stop layer is exposed.
And 6, spin-coating a BCB polymer material on the back of the InP HBT epitaxial layer taking the sapphire slide as a support, wherein the spin-coating rotation speed is 3000 r/min, the spin-coating time is 50s, and then putting the substrate into a bonding machine for precuring.
And 7, bonding the back surface of the InP HBT epitaxial wafer supported by the sapphire slide with the PI flexible substrate, and bonding in a bonding machine at the bonding temperature of 300 ℃ and the pressure of 6000MPa for 120 minutes.
And 8, placing the bonded structure formed by the sapphire slide, the ultrathin InP HBT circuit and the flexible PI substrate on a heating table for heating at 200 ℃, separating the sapphire slide by a thermal sliding stripping method, and cleaning by using a degumming agent, acetone and alcohol to obtain the flexible InP HBT device.
Example 3
A flexible InP HBT device and a preparation method thereof comprise the following steps:
And 2, completing the preparation of the device and the ultra-high speed circuit on the front surface of the InP HBT epitaxial layer through photoetching, evaporation, etching, deposition and other processes.
And 3, spin-coating a temporary bonding material adhesive with the thickness of 20 microns on the front surface of the temporary aluminum nitride slide, wherein the spin-coating rotation speed is 3000 r/min, the spin-coating time is 45s, placing the temporary aluminum nitride slide coated with the temporary bonding material with the front surface facing upwards on a hot plate for pre-baking, and setting the temperature of the hot plate to be 110 ℃ and the time to be 2 minutes.
And 4, oppositely pasting the InP epitaxial wafer after the circuit process and the front side of the aluminum nitride temporary slide together, and placing the InP epitaxial wafer and the aluminum nitride temporary slide into a wafer sticking machine for temporary bonding, wherein the bonding temperature is set at 350 ℃, the pressure is 1000MPa, and the bonding time is 30 minutes.
And 5, thinning the InP HBT epitaxial wafer supported by the aluminum nitride slide glass to 100 microns from the back by mechanical grinding, and then putting the InP HBT epitaxial wafer into wet etching solution for etching until the InP substrate is completely removed and the InGaAs stop layer is exposed.
And 6, spin-coating a BCB polymer material on the back of the InP HBT epitaxial layer which takes an aluminum nitride slide as a support, wherein the spin-coating rotation speed is 2500 rpm, the spin-coating time is 70s, and then putting the InP HBT epitaxial layer into a bonding machine for precuring.
And 7, bonding the back surface of the InP HBT epitaxial wafer supported by the aluminum nitride slide glass and the PI flexible substrate together, and placing the substrate into a bonding machine for bonding at the bonding temperature of 300 ℃ and under the pressure of 6000MPa for 60 minutes.
And 8, placing the bonding structure formed by the aluminum nitride slide, the ultrathin InP HBT circuit and the flexible PI substrate on a heating table for heating at 300 ℃, separating the aluminum nitride slide by a thermal sliding stripping method, and cleaning by using a degumming agent, acetone and alcohol to obtain the flexible InP HBT device.
Through the steps, the flexible InP HBT device and the preparation method thereof are realized.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (10)
1. The flexible InP HBT device is characterized by comprising a flexible substrate and a bonding layer formed on the flexible substrate and bonded with the flexible substrate, wherein a stop layer is combined on the bonding layer, and an InP HBT device is arranged on the stop layer.
2. The flexible InP HBT device of claim 1, wherein said flexible substrate comprises but is not limited to a flexible metal, polyimide, polyethylene glycol or polyethylene terephthalate; the bonding layer includes, but is not limited to, a metal or a polymer.
3. A method for manufacturing a flexible InP HBT device as set forth in claim 1, comprising the steps of;
step 1, growing an InP HBT epitaxial structure with a stop layer on an InP substrate in a forward direction;
step 2, completing the preparation of devices and circuits on the InP epitaxial wafer with the stop layer;
step 3, spin-coating a reversible temporary bonding material on the front surface of the temporary slide;
step 4, carrying out temporary bonding on the InP HBT epitaxial wafer subjected to the circuit process and the front surface of the temporary slide glass oppositely;
step 5, selectively removing the back of the InP substrate until reaching the stop layer;
step 6, manufacturing a bonding material on the back of the InP HBT epitaxial layer to form a bonding layer;
step 7, bonding the back surface of the InP HBT epitaxial layer with the flexible substrate;
and 8, separating the InP HBT epitaxial layer from the temporary slide to obtain the flexible InP HBT device.
4. The method of claim 3, wherein the stop layer material in step 2 is InGaAs or InGaP, and the InP HBT epitaxial structure is InP/InGaAs/InP.
5. The method for manufacturing a flexible InP HBT device according to claim 3, wherein the temporary carrier in step 3 is one of sapphire, silicon wafer, silicon carbide wafer or aluminum nitride wafer; the reversible temporary bonding material comprises but is not limited to photoresist, adhesive or high-temperature wax, and the bonding degree of the reversible temporary bonding material is reduced through photolysis, pyrolysis and the like, so that the inorganic semiconductor film can be separated from the temporary slide.
6. The method for manufacturing a flexible InP HBT device as claimed in claim 3, wherein the temporary bonding temperature in step 4 is 100-350 ℃, the pressure is 100MPa-5000MPa, and the time is 5-30 minutes.
7. The method for manufacturing a flexible InP HBT device according to claim 3, wherein the selective removal of the InP substrate back surface in step 5 comprises but is not limited to any one or combination of mechanical grinding, mechanical polishing, chemical polishing, wet etching and dry etching.
8. The method of fabricating a flexible InP HBT device as claimed in claim 3, wherein said bonding material in step 6 comprises but is not limited to metal or polymer.
9. The method of manufacturing a flexible InP HBT device as claimed in claim 3, wherein the bonding temperature in step 7 is RT-300 ℃, the pressure is 1000Mpa-8000Mpa, and the time is 10-180 minutes.
10. The method of fabricating a flexible InP HBT device as claimed in claim 3 wherein in step 8, the InP bt epilayers are separated from the temporary carrier by methods including but not limited to photolysis or pyrolysis.
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