CN110943013A - Lining and reaction chamber - Google Patents

Lining and reaction chamber Download PDF

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Publication number
CN110943013A
CN110943013A CN201911274014.1A CN201911274014A CN110943013A CN 110943013 A CN110943013 A CN 110943013A CN 201911274014 A CN201911274014 A CN 201911274014A CN 110943013 A CN110943013 A CN 110943013A
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plate
annular flow
hole
liner
adjusting plate
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CN110943013B (en
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戎艳天
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E30/00—Energy generation of nuclear origin
    • Y02E30/30—Nuclear fission reactors

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The invention provides a lining and a reaction chamber, wherein the lining comprises: a liner body; the annular flow equalizing plate is fixedly connected with the bottom of the lining main body, and a plurality of first through holes which are uniformly distributed along the circumferential direction of the annular flow equalizing plate are formed in the annular flow equalizing plate; the adjusting plate is overlapped with the annular flow homogenizing plate, and a plurality of second through holes which correspond to the first through holes one to one are formed in the adjusting plate; when the adjusting plate is located at the first position, the orthographic projection of the second through hole on the annular flow equalizing plate is maximum in the overlapping area with the corresponding first through hole in the designated area of the annular flow equalizing plate; when the adjusting plate is positioned at the second position, the overlapping area of the second through hole and the first through hole is minimum; when the adjusting plate moves from the first position to the second position, the overlapping area of the orthographic projection of each second through hole on the annular flow equalizing plate and the corresponding first through hole is gradually reduced. By applying the invention, the adjustment of the flow field in the reaction chamber can be realized.

Description

Lining and reaction chamber
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a lining and a reaction chamber.
Background
Currently, in the field of semiconductor manufacturing, a reaction chamber is used as a carrier for a process reaction and is a key component of semiconductor equipment. In the manufacturing process of semiconductor products, it is usually necessary to evacuate the chambers, wherein some chambers (such as the lower side evacuation chamber) are asymmetric in hardware structure, so that most of the gas is directly evacuated from the position close to the pump port during evacuation, and the evacuation gas flow at the position far from the pump port is less, and finally the gas flow field, the pressure field and the density field in the reaction chamber are not uniform. The uniformity of the gas flow field, the pressure field and the density field is generally closely related to the uniformity of the process, so if the gas flow field, the pressure field, the density field and the like in the reaction chamber are not uniform, the uniformity of the process is directly influenced, and the quality of the product is influenced.
In the prior art, in order to improve the uniformity of the airflow field, the pressure field and the density field in the reaction chamber, a lining structure is generally arranged in the reaction chamber in a surrounding manner, and grid holes are formed in the bottom of the lining structure.
However, with the existing lining structure, the gas flow distribution at the side close to the pump port in the reaction chamber is dense and has a large flow velocity, and the gas flow distribution at the side far from the pump port is sparse and has a small flow velocity, so that the gas flow velocity at the side close to the pump port on the surface of the wafer in the reaction chamber is large, the gas flow density is small, the gas flow static pressure is small, and the gas flow velocity at the side far from the pump port is small, the gas flow density is large, and the gas flow static pressure is large.
Disclosure of Invention
The present invention is directed to at least one of the problems of the prior art, and provides a liner and a reaction chamber.
To achieve the object of the present invention, in one aspect, there is provided a liner for improving a gas flow environment in a reaction chamber, comprising:
a liner body;
the annular flow homogenizing plate is fixedly connected with the bottom of the lining main body, and a plurality of first through holes which are uniformly distributed along the circumferential direction of the annular flow homogenizing plate are formed in the annular flow homogenizing plate;
the adjusting plate is overlapped with the annular flow homogenizing plate, and a plurality of second through holes which correspond to the first through holes one to one are formed in the adjusting plate;
the adjusting plate can move between at least a first position and a second position, wherein when the adjusting plate is located at the first position, the overlapping area of the orthographic projection of the second through holes on the annular flow equalizing plate and the corresponding first through holes in the designated area of the annular flow equalizing plate is the largest; when the adjusting plate is located at the second position, the overlapping area of the orthographic projection of the second through hole on the annular flow equalizing plate and the first through hole which is located in the designated area and corresponds to the second through hole is the smallest; when the adjusting plate moves from the first position to the second position, the overlapping area of the orthographic projection of each second through hole on the annular flow equalizing plate and the corresponding first through hole is gradually reduced.
Optionally, when the adjusting plate is located at the first position, orthographic projections of the second through holes on the annular flow equalizing plate are completely overlapped with the first through holes located in the designated area in a one-to-one correspondence manner; and/or the presence of a gas in the gas,
when the adjusting plate is located at the second position, orthographic projections of the second through holes on the annular flow equalizing plate are completely staggered with the first through holes in the designated area in a one-to-one correspondence mode.
Optionally, the adjusting plate includes a circular arc-shaped uniform flow area, the second through holes are disposed in the uniform flow area and uniformly distributed along the arc length direction of the uniform flow area, and the adjusting plate can rotate around the axial center line thereof.
Optionally, the arc length of the uniform flow region corresponds to a central angle greater than or equal to 180 °.
Optionally, the orthographic projection of each first through hole is a strip, and the length direction of each first through hole is arranged along the radial direction of the annular flow homogenizing plate.
Optionally, the adjustment plate further comprises a positioning structure for defining a movement range of the adjustment plate between the first position and the second position.
Optionally, the positioning structure comprises a guide rail and a moving member capable of moving along the guide rail; the annular flow equalizing plate comprises a first flanging arranged along the inner peripheral edge of the annular flow equalizing plate, a second flanging overlapped with the first flanging is arranged on the adjusting plate, one of the first flanging and the second flanging is provided with the guide rail, and the other one is provided with the moving member.
Optionally, the lining main body and the uniform flow structure are both made of an aluminum alloy material with a hardened surface.
In order to achieve the object of the present invention, in another aspect, a reaction chamber is provided, which includes a cavity provided with a pumping port, and a liner of the first aspect.
Optionally, the designated area is an area on the annular flow equalizing plate, which is close to the pumping port.
The invention has the following beneficial effects:
the lining provided by the invention not only comprises a lining main body, but also comprises an annular flow homogenizing plate and an adjusting plate superposed with the annular flow homogenizing plate, wherein a plurality of first through holes are uniformly distributed on the annular flow homogenizing plate along the circumferential direction of the annular flow homogenizing plate, the flow can be uniformly distributed for the whole reaction chamber, the adjusting plate can move between a first position and a second position, and the overlapping area of each second through hole on the adjusting plate and each first through hole in the designated area on the annular flow equalizing plate is gradually reduced from large to small in the moving process, so that the porosity of the first through holes in the designated area of the annular flow equalizing plate is adjusted, thereby realizing the further adjustment of the flow field in the reaction chamber, and when the non-central position is vacuumized, the overall uniformity of a flow velocity field, a pressure field, a density field and the like in the reaction chamber can be effectively guaranteed, and then the speed uniformity, the density uniformity, the static pressure uniformity and the like of airflow on the surface of the wafer are effectively guaranteed.
Drawings
FIG. 1 is a schematic top view of a liner according to an embodiment of the present disclosure;
FIG. 2 is a schematic top view of an embodiment of the present disclosure illustrating the assembly of a liner body with an annular flow distribution plate;
FIG. 3 is a schematic cross-sectional view of a liner body assembled with an annular flow distribution plate according to an embodiment of the present disclosure;
FIG. 4 is a schematic top view of a regulating plate according to an embodiment of the present disclosure;
FIG. 5 is a schematic view of a positioning structure provided in an embodiment of the present application;
FIG. 6 is a graph of a process gas simulated flow trace from a simulation run using a liner without an adjustment plate;
FIG. 7 is a vector diagram of the gas velocity at the wafer surface in the reaction chamber obtained by simulation using a liner without an adjustment plate;
FIG. 8 is a vector diagram of the surface air flow density of a wafer in a reaction chamber obtained by a simulation test using a liner without an adjustment plate;
FIG. 9 is a static pressure vector diagram of the airflow on the surface of a wafer in a reaction chamber obtained by a simulation test using a liner without a regulating plate;
FIG. 10 is a graph of simulated flow traces of process gas from a simulation run using a liner with tuning plates according to an embodiment of the present application;
FIG. 11 is a graph of a gas flow velocity vector across the surface of a wafer in a reaction chamber from a simulation run using a liner with a tuning plate according to an embodiment of the present disclosure;
FIG. 12 is a vector diagram of the surface gas flow density of a wafer in a reaction chamber obtained by a simulation test using the liner with the adjustment plate according to the embodiment of the present disclosure;
fig. 13 is a static pressure vector diagram of the airflow on the surface of a wafer in a reaction chamber obtained by a simulation test using the liner with the adjusting plate according to the embodiment of the present disclosure.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the following describes the temperature control device and the reaction chamber using the same in detail with reference to the accompanying drawings.
The embodiment provides a lining which can be used in a reaction chamber in a semiconductor manufacturing process, and the gas flow environment in the reaction chamber is improved. As shown in fig. 1, the structure of the liner includes a liner main body 10, an annular flow distribution plate 20 and an adjusting plate 30, wherein, as shown in fig. 2 and 3, the annular flow distribution plate 20 is fixedly connected to the bottom of the liner main body 10, and a plurality of first through holes 21 are uniformly distributed in the annular flow distribution plate 20 along the circumferential direction thereof. As shown in fig. 1 to 4, the adjusting plate 30 is stacked on the annular flow equalizing plate 20, and a plurality of second through holes 31 corresponding to the plurality of first through holes 21 are provided in the adjusting plate 30, the adjusting plate 30 is movable at least between a first position and a second position, and when the adjusting plate 30 is located at the first position, the overlapping area of the orthographic projection of each second through hole 31 on the annular flow equalizing plate 20 and each first through hole 21 located in a designated area of the annular flow equalizing plate 20 and corresponding to the orthographic projection is the largest; when the adjusting plate 30 is located at the second position, the overlapping area of the orthographic projection of each second through hole 31 on the annular flow equalizing plate 20 and each first through hole 21 located in the designated area and corresponding to the orthographic projection is the smallest; when the adjusting plate 30 moves from the first position to the second position, the overlapping area of the orthographic projection of each second through hole 31 on the annular flow equalizing plate 20 and the corresponding first through hole 21 gradually decreases.
The liner provided by the embodiment comprises a liner main body 10, and further comprises an annular flow equalizing plate 20 and an adjusting plate 30 superposed with the annular flow equalizing plate 20, wherein a plurality of first through holes 21 are uniformly distributed on the annular flow equalizing plate 20 along the circumferential direction of the annular flow equalizing plate 20, and can perform basic flow equalizing for the whole reaction chamber, the adjusting plate 30 can move between the first position and the second position, and the superposed area of each second through hole 31 on the adjusting plate 30 and each first through hole 21 in a specified area on the annular flow equalizing plate 20 is gradually reduced in the moving process, so that the porosity of the first through holes 21 in the specified area of the annular flow equalizing plate 20 is adjusted, further adjustment of a flow field in the reaction chamber is realized, the overall uniformity of a flow velocity field, a pressure field, a density field and the like in the reaction chamber can be effectively guaranteed when vacuumizing is performed at a non-central position, and the velocity uniformity of airflow on the surface of a wafer is effectively guaranteed, Density uniformity, static pressure uniformity, and the like.
It should be noted that the annular flow equalizing plate 20 and the liner main body 10 may be two separate parts fixed together by a mechanical connection manner, or may be integrally formed, that is, the annular flow equalizing plate 20 may be formed by extending inward from the bottom of the liner main body 10, which is not limited in this embodiment. In addition, the designated area may be a region close to the pumping opening on the annular flow equalizing plate 20, such as a side close to the pumping opening of the reaction chamber of a side-down structure (where a vacuum is pumped below a certain side).
The adjusting plate 30 may be an annular structure with a size equal to that of the annular flow equalizing plate 20, and may be detachably mounted below the annular flow equalizing plate 20, so that the influence of the adjusting plate 30 on the flow field in the chamber (the space inside the liner main body 10 and above the annular flow equalizing plate 20) may be avoided, and the uniformity of the flow field in the chamber may be further ensured. Specifically, as shown in fig. 4, a flange may be disposed on the outer edge of the adjusting plate 30 to enhance the mechanical strength of the adjusting plate 30, and the flange may be extended to form a ring 33 attached to the liner body 10, so as to prevent the adjusting plate 30 from moving or deforming under the action of the process gas, thereby enhancing the mechanical strength and stability of the overall liner structure.
It should be noted that, in the present embodiment, the material, structure and installation manner of the liner main body 10, the annular flow-equalizing plate 20 and the adjusting plate 30 are not particularly limited as long as the liner formed by the liner can make the flow velocity field, the pressure field and the density field in the reaction chamber more uniform. For example, the adjusting plate 30 can be detachably mounted on the annular flow equalizing plate 20, so that the intensity of the air suction applied to the adjusting plate 30 is small and the overall structure is more stable.
In one embodiment, when the adjusting plate 30 is located at the first position, the orthographic projection of each second through hole 31 on the annular flow equalizing plate 20 completely coincides with each first through hole 21 located in the designated area in a one-to-one correspondence; and/or when the adjusting plate 30 is located at the second position, the orthographic projections of the second through holes 31 on the annular flow equalizing plate 20 are completely staggered with the first through holes 21 located in the designated area in a one-to-one correspondence. So, when regulating plate 30 moved between first position and second position, second through-hole 31 and first through-hole 21 had realized the change of coincidence area gradually from big to little to complete crisscross from the coincidence, and the position of completely coinciding and completely crisscross has more regularity, is convenient for calculate the area and fix a position, is convenient for adjust the flow field. Here, complete staggering is understood to mean that the portion between two adjacent second through holes 31 just completely blocks the corresponding first through hole 21.
More specifically, the regulating plate 30 includes a flow equalizing zone having a circular arc shape, and a plurality of second through holes 31 are provided in the flow equalizing zone and uniformly distributed in an arc length direction of the flow equalizing zone, and the regulating plate 30 is rotatable about an axial center line thereof. Wherein, the center of the adjusting plate 30 may be projected in the same direction as the center of the annular flow equalizing plate 20. In this embodiment, the second through holes 31 are uniformly distributed along the arc length direction of the adjusting plate 30, and when the adjusting plate 30 rotates around the axial center line thereof, the overlapping area of the second through holes 31 and the first through holes 21 can be changed from large to small (or from small to large), thereby realizing the function of adjusting the flow field in the reaction chamber.
Further, the size of the central angle corresponding to the arc length of the uniform flow region can be determined according to the size of the designated region, and when the adjusting plate is applied to a reaction chamber with a similar side downward pumping structure, the central angle corresponding to the arc length of the uniform flow region can be larger than or equal to 180 degrees, so that the adjusting plate 30 can adjust the whole flow field at the side close to the pump port, and the flow field at the side far from the pump port is not affected basically. It should be noted that, this embodiment is not limited thereto, as long as the uniform flow region can adjust the flow field on the side close to the pump port, and has a small influence on the flow field on the side far from the pump port, for example, when the area of the pump port relative to the reaction chamber is small, and/or when the pump port is far from the center of the reaction chamber, the central angle corresponding to the arc length of the uniform flow region may also be smaller than 180 °.
In one embodiment, as shown in fig. 2, the orthographic projection of each first through hole 21 may be a strip shape, and the length direction of each first through hole 21 is arranged along the radial direction of the annular flow equalization plate 20. Therefore, on one hand, the flow equalizing function of the annular flow equalizing plate 20 can be guaranteed, and the gas quantity entering and exiting the reaction chamber can be guaranteed as much as possible while the flow field of the designated area in the reaction chamber is adjusted, so that the required vacuum degree can be reached as soon as possible.
Correspondingly, as shown in fig. 4, in order to facilitate the adjustment of the ventilation amount of the adjustment plate 30 to the first through hole 21 and to facilitate the calculation of the shielding amount of the adjustment plate 30 to the first through hole 21, the second through holes 31 on the adjustment plate 30 may be set in the same specification and size, that is, the orthographic projection of each second through hole 31 may also be a long strip, and the length direction of each second through hole 3 is set along the radial direction of the adjustment plate 30.
A simulation test is carried out by using the inner liner with the adjusting plate 30 and the annular flow equalizing plate 20, and the calculation shows that when the adjusting plate 30 is rotated to enable the shielding area of the adjusting plate 30 to each first through hole 21 to be 70-80% (namely the overlapping area of each second through hole 31 and the corresponding first through hole 21 accounts for 30-20% of the total area of the first through holes 21), the speed uniformity of the air flow on the surface of the wafer is 63%, the density uniformity is 3.1%, and the static pressure uniformity is 3.3%; when the shielding area of the adjusting plate 30 to each first through hole 21 is 50% to 60%, the speed uniformity of the air flow on the surface of the wafer is 56%, the density uniformity is 2.7%, and the static pressure uniformity is 2.8%; when the ratio of the shielding area of the adjusting plate 30 to each first through hole 21 is 30% to 40%, the uniformity of the velocity of the air flow on the wafer surface is 62%, the uniformity of the static pressure is 2.7%, and the uniformity of the density is 2.6%. Therefore, when the ratio of the shielding area of the first through holes 21 is between 30% and 80%, the speed uniformity, the density uniformity and the static pressure uniformity of the airflow on the surface of the wafer are all improved compared with the prior art (the speed uniformity, the density uniformity and the static pressure uniformity of the airflow on the surface of the wafer are 66%, 3.5% and 3.7%), and especially when the ratio of the shielding area of the first through holes 21 is between 50% and 60%, the speed uniformity, the density uniformity and the static pressure uniformity of the airflow on the surface of the wafer are all obviously improved.
The calculation methods of the speed uniformity, the density uniformity and the static pressure uniformity are similar, and can be that values of a plurality of different positions are selected, then the difference value of the maximum value and the minimum value is divided by the average value of the values of the plurality of different positions, and the obtained percentage is the uniformity value.
Specifically, the present example was conducted to perform simulation tests on a liner without the adjustment plate 30 and a liner with the adjustment plate 30, respectively, as shown in FIG. 6, in order to perform simulation tests using a liner without the adjustment plate 30 in a reaction chamber, the process gases obtained therebyAnd (3) simulating a flow trace diagram, wherein the density of the lines in the graph 6 can represent the density of the fluid, and the color of the lines can represent the flow velocity of the gas, and as can be seen from the graph 6, the flow traces on the near pump port side and the far pump port side in the reaction chamber are relatively dense, the flow traces on the far pump port side are relatively sparse, the flow velocity on the near pump port side is basically between 6.667m/s and 16.667m/s, and the flow velocity on the far pump port side is basically lower than 6.667 m/s. As shown in fig. 7-9, which are respectively the gas flow velocity vector diagram, the gas flow density vector diagram and the gas flow static pressure vector diagram of the wafer surface in the reaction chamber obtained by the above simulation experiment, in fig. 7, the circular outline can be understood as the wafer surface, and the color of each region of the wafer surface characterizes the gas flow velocity at each position of the wafer surface, and as can be seen from fig. 7, the gas flow velocity (substantially above 4.444 m/s) at the near pump port side (left side in the figure) of the wafer surface is generally greater than the gas flow velocity (substantially below 4.444 m/s) at the far pump port side (left crescent region in fig. 7), and the gas flow velocity at the near pump port side part (right crescent region in fig. 7) reaches above 17.778m/s, while the gas flow velocity at the far pump port side part (right crescent region in fig. 7) is below 2.222 m. In fig. 8, the circular contour can be understood as the wafer surface, and the color of the wafer surface represents the airflow density of the wafer surface, in fig. 9, the circular contour can be understood as the wafer surface, and the color of the wafer surface represents the airflow static pressure of the wafer surface, and as can be seen from fig. 8 and 9, the edge airflow density and the airflow static pressure on the side of the wafer surface near the pump port are smaller than those on other areas of the wafer surface, wherein the edge airflow density on the side of the wafer surface near the pump port is 6.16 × 10-6kg/m3To 6.77X 10-6kg/m3The gas flow density of other areas on the surface of the wafer is 6.77 x 10- 6kg/m3To 7.38X 10-6kg/m3To (c) to (d); the edge gas flow static pressure of the near pump port side of the wafer surface is 4.67 multiplied by 10-3Hold in the palm to 5.13 multiplied by 10-3The static pressure of airflow between the supports and other areas of the wafer surface is 5.13 x 10-3Hold in the palm to 5.60 x 10-3Between the brackets.
As shown in fig. 10, a simulation flow trace diagram of the process gas obtained for a simulation test using the liner having the above-described regulating plate 30 in the reaction chamber was obtained. In this test, the shielding area of the adjusting plate 30 for each first through-hole 21 was 50%To 60%, the density of the lines in fig. 10 may be indicative of the fluid density and the line color may be indicative of the flow rate of the gas. As can be seen from FIG. 10, the density and velocity of the gas flow are relatively uniform throughout the reaction chamber, and the velocity of the gas flow is substantially between 3.75m/s and 11.25 m/s. As shown in fig. 11-13, which are the airflow velocity vector diagram, the density vector diagram and the static pressure vector diagram of the wafer surface in the reaction chamber obtained by the above simulation test, respectively, in fig. 11, the circular outline can be understood as the wafer surface, and the colors of the regions of the wafer surface characterize the airflow velocity of the wafer surface, and as shown in fig. 11, the airflow velocity of the wafer surface is relatively uniform, mostly between 2.5m/s and 12.5m/s, and the distribution of different airflow velocities is relatively symmetrical. In fig. 12, the circular contour can be understood as the wafer surface, and the color of the wafer surface is used to characterize the gas flow density of the wafer surface, and as can be seen from fig. 12, the gas flow density of the wafer surface is relatively uniform and is substantially 6.77 × 10-6kg/m3To 7.38X 10-6kg/m3In the meantime. In fig. 13, the circular outline can be understood as the wafer surface, and the color of the wafer surface is used to represent the static airflow pressure of the wafer surface, and as can be seen from fig. 13, the static airflow pressure of the wafer surface is relatively uniform and is substantially 5.13 × 10-3Hold in the palm to 5.60 x 10-3In the meantime.
In summary, compared with the liner structure without the adjustment plate 30, the liner structure with the adjustment plate 30 provided in this embodiment can effectively improve the uniformity of the airflow in the reaction chamber, and improve the uniformity of the airflow velocity, density and static pressure on the surface of the wafer, thereby effectively improving the surface quality of the wafer.
It should be noted that the structure of the first through hole 21 (and the second through hole 31) may also be other shapes, such as a circular hole or an oblong hole with a radian, and the first through hole is uniformly distributed on a plurality of circular rings taking the center of the annular flow distributing plate 20 (and the adjusting plate 30) as the center of a circle, so as to achieve the function of a uniform flow field, which is not specifically limited in this embodiment.
In another embodiment, in order to ensure the stability of the regulating plate 30, the uniform flow structure may further include a positioning structure for limiting the moving range of the regulating plate 30 between the first position and the second position, i.e., a technician may set the moving range of the regulating plate 30 at any position between the first position and the second position (including the first position and the second position) as required, and then may fix the scheduling plate at the set position by the positioning structure.
More specifically, the positioning structure may include a guide rail and a moving member movable along the guide rail; the guide rail can be arranged on the annular flow equalizing plate 20, the moving member can be arranged on the adjusting plate 30, or the guide rail can be arranged on the adjusting plate 30, and the moving member can be arranged on the annular flow equalizing plate 20. When the moving member moves in the guide rail, the adjusting plate 30 can be driven to move relative to the annular flow equalizing plate 20 at least between the first position and the second position, and the adjusting plate 30 can be prevented from moving in the working process by the friction force between the moving member and the guide rail, so that the adjusting effect of the adjusting plate 30 on the flow field is influenced. Specifically, the moving member and the guide rail may be provided in pairs, and a plurality of pairs may be provided; one guide rail may be provided corresponding to a plurality of moving members, which is not limited in this embodiment.
Further, as shown in fig. 3, the annular flow equalizing plate 20 may include a first flange 22 provided along an inner circumferential edge thereof, the adjusting plate 30 may be provided with a second flange 32 overlapping the first flange 22, and one of the first flange 22 and the second flange 32 may be provided with a guide rail and the other may be provided with a moving member. By arranging the first flange 22 and the second flange 32 which are overlapped with each other, the positioning structure is arranged on the flanges, so that the influence of the positioning device on the flow field is avoided, the flow field in the cavity is more stable, the adjusting plate 30 is more convenient to move, and the flow field in a designated area is more convenient to adjust. In addition, the second flange 32 is disposed at the inner edge of the adjusting plate 30, so that the annular flow distribution plate 20 can be disposed in an annular groove formed by the second flange 32 of the adjusting plate 30 and the flange at the outer edge of the adjusting plate 30, and the adjusting plate 30 can rotate along the annular groove, so that the adjusting plate 30 can adjust the annular flow distribution plate 20 more accurately, and the overall structure is more stable.
Furthermore, as shown in fig. 5, the guide rail may be an elongated circular hole 221 disposed on the first flange 22, the moving member may be a positioning pin 321 disposed on the second flange 32, the positioning pin 321 is disposed corresponding to the elongated circular hole 221 and can slide in the elongated circular hole 221 when receiving an external force, when the position of the adjustment plate 30 needs to be adjusted, only the positioning pin 321 needs to be pushed along the elongated circular hole 221, and then the positioning pin 321 is fixed in a proper position, so that the adjustment plate 30 is positioned by the pin-hole fit, and the structure is simple and reliable, and the operation is convenient.
It should be noted that the positioning structure may also be other structures, such as a simple fixing clip, a locking structure (one of the adjusting plate 30 and the annular flow equalizing plate 20 is provided with a locking ring and one is provided with a locking tongue), and the like, as long as the positioning structure can be used for limiting the moving range of the adjusting plate 30 between the first position and the second position, and plays a certain role in limiting and fixing the moving range, which is not specifically limited in this embodiment.
In one embodiment, the liner body 10 and the flow homogenizing structure are both made of an aluminum alloy with a hardened surface. Therefore, the structural strength of the lining main body 10 and the uniform flow structure can be guaranteed, the uniform flow structure is prevented from displacement and even deformation under strong air exhaust pressure, the corrosion resistance of the lining main body 10 and the uniform flow structure can be improved, and the service life of the lining main body and the uniform flow structure is prolonged.
As another technical solution, based on the same inventive concept of the liner embodiment, an embodiment of the present invention further provides a reaction chamber, where the reaction chamber includes the liner provided in each of the embodiments.
In one embodiment, the designated area is the area of the annular flow distribution plate 20 near the pumping ports.
The reaction chamber provided by the embodiment of the application can at least realize the beneficial effects that the embodiment of the lining can realize, and the description is omitted here.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.

Claims (10)

1. A liner for improving a gas flow environment within a reaction chamber, comprising:
a liner body;
the annular flow homogenizing plate is fixedly connected with the bottom of the lining main body, and a plurality of first through holes which are uniformly distributed along the circumferential direction of the annular flow homogenizing plate are formed in the annular flow homogenizing plate;
the adjusting plate is overlapped with the annular flow homogenizing plate, and a plurality of second through holes which correspond to the first through holes one to one are formed in the adjusting plate;
the adjusting plate can move between at least a first position and a second position, wherein when the adjusting plate is located at the first position, the overlapping area of the orthographic projection of the second through holes on the annular flow equalizing plate and the corresponding first through holes in the designated area of the annular flow equalizing plate is the largest; when the adjusting plate is located at the second position, the overlapping area of the orthographic projection of the second through hole on the annular flow equalizing plate and the first through hole which is located in the designated area and corresponds to the second through hole is the smallest; when the adjusting plate moves from the first position to the second position, the overlapping area of the orthographic projection of each second through hole on the annular flow equalizing plate and the corresponding first through hole is gradually reduced.
2. The liner according to claim 1, wherein when the adjusting plate is located at the first position, the orthographic projection of each second through hole on the annular flow equalizing plate is completely overlapped with each first through hole located in the designated area in a one-to-one correspondence; and/or the presence of a gas in the gas,
when the adjusting plate is located at the second position, orthographic projections of the second through holes on the annular flow equalizing plate are completely staggered with the first through holes in the designated area in a one-to-one correspondence mode.
3. The liner of claim 1 or 2, wherein the regulating plate comprises a uniform flow area having a circular arc shape, and a plurality of the second through holes are provided in the uniform flow area and uniformly distributed along an arc length direction of the uniform flow area, and the regulating plate is rotatable about an axial center line thereof.
4. The liner of claim 3 wherein the arc length of the even flow region corresponds to a central angle of 180 ° or greater.
5. The liner according to claim 1 or 2, wherein an orthographic projection of each first through hole is a strip shape, and a length direction of each first through hole is arranged along a radial direction of the annular flow homogenizing plate.
6. The liner of claim 3, further comprising a positioning structure for defining a range of movement of the adjustment plate between the first position and the second position.
7. The liner of claim 6, wherein the positioning structure comprises a guide rail and a mover movable along the guide rail; the annular flow equalizing plate comprises a first flanging arranged along the inner peripheral edge of the annular flow equalizing plate, a second flanging overlapped with the first flanging is arranged on the adjusting plate, one of the first flanging and the second flanging is provided with the guide rail, and the other one is provided with the moving member.
8. The liner of claim 1, wherein the liner body and the flow homogenizing structure are both of an aluminum alloy material with a hardened surface.
9. A reaction chamber comprising a chamber body provided with a pumping port, characterized by further comprising a liner according to any one of claims 1 to 8.
10. The reaction chamber of claim 9 wherein the designated area is an area on the annular flow distribution plate near the pumping port.
CN201911274014.1A 2019-12-12 2019-12-12 Inner liner and reaction chamber Active CN110943013B (en)

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