CN110931609A - 一种倒装紫外发光二极管及其制备方法 - Google Patents
一种倒装紫外发光二极管及其制备方法 Download PDFInfo
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- CN110931609A CN110931609A CN201910858416.XA CN201910858416A CN110931609A CN 110931609 A CN110931609 A CN 110931609A CN 201910858416 A CN201910858416 A CN 201910858416A CN 110931609 A CN110931609 A CN 110931609A
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- 238000002360 preparation method Methods 0.000 title claims description 9
- 239000000463 material Substances 0.000 claims abstract description 52
- 239000004065 semiconductor Substances 0.000 claims abstract description 50
- 238000009792 diffusion process Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims description 43
- 229910002704 AlGaN Inorganic materials 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 238000003892 spreading Methods 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 description 32
- 238000010521 absorption reaction Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000032912 absorption of UV light Effects 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000009643 growth defect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000000025 interference lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201910858416.XA CN110931609A (zh) | 2019-09-11 | 2019-09-11 | 一种倒装紫外发光二极管及其制备方法 |
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CN201910858416.XA CN110931609A (zh) | 2019-09-11 | 2019-09-11 | 一种倒装紫外发光二极管及其制备方法 |
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CN110931609A true CN110931609A (zh) | 2020-03-27 |
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CN201910858416.XA Pending CN110931609A (zh) | 2019-09-11 | 2019-09-11 | 一种倒装紫外发光二极管及其制备方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111628057A (zh) * | 2020-05-27 | 2020-09-04 | 东南大学 | 一种具有亚波长光栅反射镜的紫外发光二极管 |
CN118299486A (zh) * | 2024-06-05 | 2024-07-05 | 徐州立羽高科技有限责任公司 | 一种深紫外led芯片及制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050148194A1 (en) * | 2003-12-29 | 2005-07-07 | Wen-How Lan | Structure and manufacturing method for nitride-based light-emitting diodes |
CN211182232U (zh) * | 2019-09-11 | 2020-08-04 | 北京中科优唯科技有限公司 | 一种倒装紫外发光二极管芯片 |
-
2019
- 2019-09-11 CN CN201910858416.XA patent/CN110931609A/zh active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050148194A1 (en) * | 2003-12-29 | 2005-07-07 | Wen-How Lan | Structure and manufacturing method for nitride-based light-emitting diodes |
CN211182232U (zh) * | 2019-09-11 | 2020-08-04 | 北京中科优唯科技有限公司 | 一种倒装紫外发光二极管芯片 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111628057A (zh) * | 2020-05-27 | 2020-09-04 | 东南大学 | 一种具有亚波长光栅反射镜的紫外发光二极管 |
CN118299486A (zh) * | 2024-06-05 | 2024-07-05 | 徐州立羽高科技有限责任公司 | 一种深紫外led芯片及制备方法 |
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Effective date of registration: 20240614 Address after: 046000 Zhangze New Industrial Park, Changzhi High-tech Zone, Shanxi Province Applicant after: SHANXI ZHONGKE ADVANCED ULTRAVIOLET OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Country or region after: China Address before: Room 708, 7 / F, building 5, courtyard 58, Jinghai fifth road, Daxing Economic and Technological Development Zone, Beijing Applicant before: BEIJING ZHONGKE YOUWILL TECHNOLOGY Co.,Ltd. Country or region before: China |