CN110931535A - Micro OLED structure and preparation method thereof - Google Patents
Micro OLED structure and preparation method thereof Download PDFInfo
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- CN110931535A CN110931535A CN201911268119.6A CN201911268119A CN110931535A CN 110931535 A CN110931535 A CN 110931535A CN 201911268119 A CN201911268119 A CN 201911268119A CN 110931535 A CN110931535 A CN 110931535A
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- H—ELECTRICITY
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Abstract
The invention discloses a Micro OLED structure and a preparation method thereof, wherein the Micro OLED structure comprises a semiconductor substrate base plate and is characterized in that: the semiconductor substrate is provided with an insulating layer and an anode layer, the insulating layer and the anode layer are provided with hole injection layers, the hole injection layers are provided with hole transport layers, the hole transport layers are provided with light emitting layers, and the light emitting layers are sequentially provided with electron transport layers and electron injection layers; the electron injection layer is provided with a cathode layer, the cathode layer is provided with a color filter layer, and the color filter layer is provided with a glass protective cover. The Micro OLED structure and the preparation method thereof have the advantages of simple structure, high transmittance, good applicability and good application prospect.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a Micro OLED structure and a preparation method thereof.
Background
The existing OLED full-color device has low transmittance and absorptivity, and can not well meet the use requirement.
Disclosure of Invention
The invention aims to solve the problems in the prior art and provides a micro OLED structure with a simple structure and high transmittance and a preparation method thereof.
In order to achieve the purpose, the invention adopts the technical scheme that: the provided Micro OLED structure comprises a semiconductor substrate and a substrate, and is characterized in that: the semiconductor substrate is provided with an insulating layer and an anode layer, the insulating layer and the anode layer are provided with hole injection layers, the hole injection layers are provided with hole transport layers, the hole transport layers are provided with light emitting layers, and the light emitting layers are sequentially provided with electron transport layers and electron injection layers; the electron injection layer is provided with a cathode layer, the cathode layer is provided with a color filter layer, and the color filter layer is provided with a glass protective cover.
In order to make the technical scheme more detailed and concrete, the invention also provides the following further preferable technical scheme to obtain satisfactory practical effect:
the light-emitting layer comprises a blue light layer, a green light layer and a red light layer which are arranged from top to bottom.
And an SINx thin film packaging layer for protecting the OLED is arranged between the cathode layer and the color filter layer.
The color filter layer comprises a red optical thin film layer, a green optical thin film layer and a blue optical thin film layer which are sequentially arranged in the same horizontal plane.
A preparation method of a Micro OLED structure comprises the following steps: preparing a semiconductor substrate, depositing an insulating material SIO on the semiconductor substrate2Patterning the film layer by using a yellow light gluing and developing method, and photoetching the pattern by using a dry etching method to form an insulating layer; plating a metal anode layer on a semiconductor substrate, patterning the anode by using a photoetching method and photoetching a pattern by using a dry etching method; benefit toA hole injection layer, a hole transport layer, a luminescent layer, an electron transport layer and an electron injection layer are sequentially manufactured by an evaporation machine; evaporating to prepare a cathode layer, and depositing an SINx film packaging layer on the cathode layer; directly manufacturing a color filter layer on the SINx film packaging layer; the color filter layer is coated with glue, and then the glass is pasted on the top of the color filter layer by a glass pasting machine to manufacture a glass protective cover.
The color filter layer adopts an optical coating machine to coat TIO2And MgF2And coating a film on the SINx thin film packaging layer.
TIO is arranged on the SINx thin film encapsulation layer2And MgF2Carrying out staggered film coating to form a red optical film of the color filter layer, taking out the coated substrate, coating a layer of photoresist on the surface, carrying out development operation to protect pixel points to be protected, exposing the area to be etched, and putting the substrate into a dry etching machine to utilize CF (color filter)4And CL2The excess is etched away.
TIO is arranged on the SINx thin film encapsulation layer2And MgF2Forming a green optical film of the color filter layer by staggered coating, taking out the coated substrate, coating a layer of photoresist on the surface, developing to protect the pixel points to be protected, exposing the area to be etched, and putting the substrate into a dry etching machine to utilize CF4And CL2The excess is etched away.
TIO is arranged on the SINx thin film encapsulation layer2And MgF2Forming a blue optical film of the color filter layer by staggered coating, taking out the coated substrate, coating a layer of photoresist on the surface, developing to protect the pixel points to be protected, exposing the area to be etched, and putting the substrate into a dry etching machine to utilize CF4And CL2The excess is etched away.
And after the blue optical thin film layer is coated, removing the redundant photoresist to complete the manufacture of the color filter layer.
Compared with the prior art, the invention has the following advantages: the Micro OLED structure and the preparation method thereof have the advantages of simple structure, high transmittance, good applicability and good application prospect.
Drawings
The contents of the drawings and the reference numerals in the drawings of the present specification will be briefly described as follows:
FIG. 1 is a schematic view of a Micro OLED structure;
FIG. 2 is a schematic view of a transmission spectrum of a red optical film;
FIG. 3 is a schematic view of a transmission spectrum of a green optical film;
FIG. 4 is a schematic view of a transmission spectrum of a blue optical film;
FIG. 5 is a table of CF layer coating thickness;
FIG. 6 is a schematic diagram of a CF layer manufacturing process.
Reference numerals: 1. the light-emitting diode comprises a semiconductor substrate, a semiconductor substrate 2, an insulating layer 3, an anode layer 4, a hole injection layer 5, a hole transport layer 6, a light-emitting layer 7, an electron transport layer 8, an electron injection layer 9, a cathode layer 10, a color filter layer 11 and a glass protective cover.
Detailed Description
The following description of the embodiments of the present invention will be made in detail with reference to the accompanying drawings.
The Micro OLED structure comprises a semiconductor substrate 1, an insulating layer 2 and an anode layer 3 are arranged on the semiconductor substrate 1, a hole injection layer 4 is arranged on the insulating layer 2 and the anode layer 3, a hole transport layer 5 is arranged on the hole injection layer 4, a light-emitting layer 6 is arranged on the hole transport layer 5, and an electron transport layer 7 and an electron injection layer 8 are sequentially arranged on the light-emitting layer 6; a cathode layer 9 is arranged on the electron injection layer 8, a color filter layer 10 is arranged on the cathode layer 9, and a glass protective cover 11 is arranged on the color filter layer 10.
In the present invention, the light emitting layer 6 includes a blue light layer, a green light layer, and a red light layer arranged from top to bottom. An SINx film packaging layer for protecting the OLED is arranged between the cathode layer 9 and the color filter layer 10 to protect OLED materials and facilitate film coating of the color filter layer 10 behind.
In the present invention, as shown in fig. 6, the color filter layer 10 includes a red optical film layer, a green optical film layer, and a blue optical film layer arranged in this order in the same horizontal plane.
The invention provides a preparation method of a Micro OLED structure, which comprises the following steps: preparing a semiconductor substrate 1, and depositing an insulating material SIO on the semiconductor substrate 12Patterning the film layer by using a yellow light gluing and developing method, and photoetching the pattern by using a dry etching method to form an insulating layer 2; plating a metal anode layer 3 on a semiconductor substrate 1, patterning the anode by using a photoetching method and photoetching a pattern by using a dry etching method; a hole injection layer 4, a hole transport layer 5, a luminescent layer 6, an electron transport layer 7 and an electron injection layer 8 are sequentially manufactured by an evaporation machine; evaporating to prepare a cathode layer 9, and depositing an SINx film packaging layer on the cathode layer 9; directly manufacturing a color filter layer 10 on the SINx film packaging layer; the color filter layer 10 is coated with glue and then pasted with glass by a glass pasting machine to manufacture a glass protective cover 11 on the top.
In the invention, the color filter layer 10 adopts an optical film coating machine to coat TIO2And MgF2Coating a film on the SINx thin film packaging layer. The color filter layer 10 includes a red optical film layer, a green optical film layer, and a blue optical film layer.
TIO on SINx film encapsulation layer2And MgF2Performing staggered coating to form a red optical film of the color filter layer (coating according to the CF layer coating thickness table in FIG. 5), taking out the coated substrate, coating a layer of photoresist on the surface, performing development to protect the pixel points to be protected, exposing the area to be etched, and placing the substrate in a dry etching machine by using CF4And CL2The excess is etched away.
TIO on SINx film encapsulation layer2And MgF2Forming a green optical film of the color filter layer 10 by staggered coating (coating according to the CF layer coating thickness table in FIG. 5), taking out the coated substrate, coating a layer of photoresist on the surface, developing to protect the pixel points to be protected, and etchingExposing the etched region, placing the substrate in a dry etching machine for using CF4And CL2The excess is etched away.
TIO on SINx film encapsulation layer2And MgF2Performing staggered coating to form a blue optical film (coating according to the CF layer coating thickness table in FIG. 5) of the color filter layer, taking out the coated substrate, coating a layer of photoresist on the surface, performing development to protect the pixel points to be protected, exposing the area to be etched, and placing the substrate in a dry etching machine by using CF4And CL2The excess is etched away.
After the blue optical thin film layer is coated, the redundant photoresist is removed, and the color filter layer 10 is manufactured.
In the present invention, the semiconductor substrate 1 is a TFT substrate (thin film transistor substrate) which is generally purchased from an IC factory. Deposition of an insulating substance SIO on a semiconductor substrate 1 by means of PECVD (plasma enhanced chemical vapor deposition)2Is generally described in
Left and right, the film layer is patterned by yellow light gluing and developing method and CF is passed through4The (carbon tetrafluoride) dry etching method transfers the pattern of the photoresist to the wafer to form the insulating layer 2. Sequentially plating MO/AL/ITO on a semiconductor substrate 1 by using a PVD machine
And the like to form the anode layer 3; the anode was patterned using photolithography and the lithographic pattern was transferred to the wafer by CL2 (chlorine) dry etching.
As shown in fig. 1, the anode is partitioned into one region by the insulating layer SIO2, and each partitioned region becomes one pixel. The insulating layers and the anode layers are arranged in parallel and staggered, and the insulating layers are also called pixel definition layers to separate each pixel.
The hole injection layer 4(HIL) is formed by evaporation using an evaporation machine. The hole transport layer 5(HTL) is formed by evaporation using an evaporator. The luminescent layer 6 is made by evaporation using an evaporation machine. The light-emitting layer 6 comprises three layers of b (blue light), g (green light) and r (red light) from top to bottom; the Electron Transport Layer (ETL)7 is formed by evaporation using an evaporation machine. An Electron Injection Layer (EIL)8 is formed by evaporation using an evaporation machine. And plating Ag/Mg and other materials on an evaporation machine to manufacture a cathode layer 9, and manufacturing a thin film SINx (about 500nm) by using a PECVD machine to protect the OLED material to form a SINx thin film packaging layer.
When a forward voltage is applied, holes and electrons overcome the energy barrier and are injected from the anode and the cathode respectively, the holes pass through the HOMO energy level of the HTL through the HIL, and the electrons pass through the LOMO energy level of the ETL through the EIL. The electrons and the holes are combined in the organic light-emitting layer 6 having a light-emitting property to form excitons, and the excitons release energy in the form of light emission and heat generation.
The color filter layer 10, namely the CF layer (OC glue is needed if CF is made by using a color glue method, the CF layer has higher adhesiveness by coating, and CF can be directly made) is directly made on the SINx film packaging layer, and the optical coating can be made by selecting TIO2 as a high-refractive-index material and MgF2 as a low-refractive-index material. The temperature for preparation is not heated. The ion source was selected from an RF ion source with a neutralizer using AR 20SCCM O280 SCCM Power at 800W.
And (3) placing the film source on a machine plating pot, setting a film plating program according to the thickness of each layer of the red optical film in the graph 5, and automatically switching to the next layer until all layers are plated after the thickness of each layer is monitored by a machine film thickness meter. The optical transmission curve after the optical film is manufactured is shown in fig. 2. And taking out the wafer source after the wafer is coated, coating a layer of photoresist on the surface of the wafer, carrying out development operation to protect pixel points to be protected, exposing areas to be etched, and etching and removing the redundant parts of the wafer by using CF4 and CL2 in a dry etching machine.
And (3) placing the film source on a machine plating pot, setting a film plating program according to the thickness of each layer of the green optical film in the graph 5, and automatically switching to the next layer until all layers are plated after the thickness of each layer reaches the thickness monitored by a machine film thickness meter. The optical transmission curve after the optical film is manufactured is shown in fig. 3. And taking out the wafer source after the wafer is coated, coating a layer of photoresist on the surface of the wafer, carrying out development operation to protect pixel points to be protected, exposing areas to be etched, and etching and removing the redundant parts of the wafer by using CF4 and CL2 in a dry etching machine.
And (3) placing the film source on a machine plating pot, setting a film plating program according to the thickness of each layer of the blue optical film in the graph 5, and automatically switching to the next layer until all layers are plated after the thickness of each layer is monitored by a machine film thickness meter. The optical transmission curve after the optical film is manufactured is shown in fig. 4. And taking out the wafer source after the wafer is coated, coating a layer of photoresist on the surface of the wafer, carrying out development operation to protect pixel points to be protected, exposing areas to be etched, and etching and removing the redundant parts of the wafer by using CF4 and CL2 in a dry etching machine.
Finally, the redundant photoresist is removed, and the manufacture of the color filter layer 10 is completed. The step of forming the color filter layer 10 described above can be seen in particular in fig. 6.
After the color filter layer 10 is manufactured, OCR glue is coated, and then a glass laminating machine is used for pasting glass on the top to manufacture a glass protective cover 11.
The patent discloses a novel OLED device structure, and the optical film of narrow-band light filtering piece is used for replacing R, G and B color glue used in general OLED in the process of manufacturing CF layer in the OLED device structure. The transmittance of the optical film is generally over 90% and no absorption exists, the residual light can be reflected back to the cavity again, so that the utilization efficiency of the light is greatly improved, and the light color quality can be better improved due to the narrow bandwidth of the optical film.
The Micro OLED structure and the preparation method thereof have the advantages of simple structure, high transmittance, good applicability and good application prospect.
The invention has been described above with reference to the accompanying drawings, but the invention is not limited to the above-described embodiments, and it is within the scope of the invention to use various insubstantial modifications of the inventive concept and solutions or to apply them directly to other applications.
Claims (10)
1. A Micro OLED structure comprises a semiconductor substrate and a substrate, and is characterized in that: the semiconductor substrate is provided with an insulating layer and an anode layer, the insulating layer and the anode layer are provided with hole injection layers, the hole injection layers are provided with hole transport layers, the hole transport layers are provided with light emitting layers, and the light emitting layers are sequentially provided with electron transport layers and electron injection layers; the electron injection layer is provided with a cathode layer, the cathode layer is provided with a color filter layer, and the color filter layer is provided with a glass protective cover.
2. A Micro OLED structure according to claim 1, wherein: the light-emitting layer comprises a blue light layer, a green light layer and a red light layer which are arranged from top to bottom.
3. The silicon-based alignment method of claim 1, wherein: and an SINx thin film packaging layer for protecting the OLED is arranged between the cathode layer and the color filter layer.
4. The silicon-based alignment method of claim 1, wherein: the color filter layer comprises a red optical thin film layer, a green optical thin film layer and a blue optical thin film layer which are sequentially arranged in the same horizontal plane.
5. A method of making a Micro OLED structure according to any of claims 1 to 4, comprising: the method comprises the following steps: preparing a semiconductor substrate, depositing an insulating material SIO on the semiconductor substrate2Patterning the film layer by using a yellow light gluing and developing method, and photoetching the pattern by using a dry etching method to form an insulating layer; plating a metal anode layer on a semiconductor substrate, patterning the anode by using a photoetching method and photoetching a pattern by using a dry etching method; a hole injection layer, a hole transport layer, a luminescent layer, an electron transport layer and an electron injection layer are sequentially manufactured by an evaporation machine; evaporating to prepare a cathode layer, and depositing an SINx film packaging layer on the cathode layer; in a SINx film sealDirectly manufacturing a color filter layer on the mounting layer; coating OCR glue on the color filter layer, and sticking glass on the color filter layer by a glass sticking machine to manufacture a glass protective cover at the top.
6. A method of fabricating a Micro OLED structure according to claim 5, wherein: the color filter layer adopts an optical coating machine to coat TIO2And MgF2And coating a film on the SINx thin film packaging layer.
7. A method of fabricating a Micro OLED structure according to claim 6, wherein: TIO is arranged on the SINx thin film encapsulation layer2And MgF2Carrying out staggered film coating to form a red optical film of the color filter layer, taking out the coated substrate, coating a layer of photoresist on the surface, carrying out development operation to protect pixel points to be protected, exposing the area to be etched, and putting the substrate into a dry etching machine to utilize CF (color filter)4And CL2The excess is etched away.
8. A method of fabricating a Micro OLED structure according to claim 7, wherein: TIO is arranged on the SINx thin film encapsulation layer2And MgF2Forming a green optical film of the color filter layer by staggered coating, taking out the coated substrate, coating a layer of photoresist on the surface, developing to protect the pixel points to be protected, exposing the area to be etched, and putting the substrate into a dry etching machine to utilize CF4And CL2The excess is etched away.
9. A method of fabricating a Micro OLED structure according to claim 8, wherein: TIO is arranged on the SINx thin film encapsulation layer2And MgF2Forming a blue optical film of the color filter layer by performing staggered film coating, taking out the substrate after film coating, coating a layer of photoresist on the surface, performing development operation to protect pixel points to be protected, exposing an area to be etched, and putting the substrate into a dry stateUsing CF in engraving machine4And CL2The excess is etched away.
10. A method of fabricating a Micro OLED structure according to claim 9, wherein: and after the blue optical thin film layer is coated, removing the redundant photoresist to complete the manufacture of the color filter layer.
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| JPH05341120A (en) * | 1992-06-04 | 1993-12-24 | Asahi Optical Co Ltd | Multi-layer film filter for ultraviolet ray irradiating device |
| US20150021569A1 (en) * | 2013-07-18 | 2015-01-22 | Samsung Display Co., Ltd. | Display apparatus |
| CN106920901A (en) * | 2017-05-11 | 2017-07-04 | 安徽熙泰智能科技有限公司 | A kind of Full-color OLED micro-display device production method |
| CN107425127A (en) * | 2017-05-11 | 2017-12-01 | 安徽熙泰智能科技有限公司 | A kind of silicon substrate Full-color OLED micro-display device and preparation method thereof |
| CN208689198U (en) * | 2018-08-02 | 2019-04-02 | 利基光电科技(九江)有限公司 | Day and night two use optical filter |
| CN110212115A (en) * | 2019-06-17 | 2019-09-06 | 南京国兆光电科技有限公司 | Miniature active matrix type organic luminous display device and preparation method thereof |
-
2019
- 2019-12-11 CN CN201911268119.6A patent/CN110931535B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05341120A (en) * | 1992-06-04 | 1993-12-24 | Asahi Optical Co Ltd | Multi-layer film filter for ultraviolet ray irradiating device |
| US20150021569A1 (en) * | 2013-07-18 | 2015-01-22 | Samsung Display Co., Ltd. | Display apparatus |
| CN106920901A (en) * | 2017-05-11 | 2017-07-04 | 安徽熙泰智能科技有限公司 | A kind of Full-color OLED micro-display device production method |
| CN107425127A (en) * | 2017-05-11 | 2017-12-01 | 安徽熙泰智能科技有限公司 | A kind of silicon substrate Full-color OLED micro-display device and preparation method thereof |
| CN208689198U (en) * | 2018-08-02 | 2019-04-02 | 利基光电科技(九江)有限公司 | Day and night two use optical filter |
| CN110212115A (en) * | 2019-06-17 | 2019-09-06 | 南京国兆光电科技有限公司 | Miniature active matrix type organic luminous display device and preparation method thereof |
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