CN110931378A - Defect detection method - Google Patents
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- CN110931378A CN110931378A CN201911194930.4A CN201911194930A CN110931378A CN 110931378 A CN110931378 A CN 110931378A CN 201911194930 A CN201911194930 A CN 201911194930A CN 110931378 A CN110931378 A CN 110931378A
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Abstract
The invention provides a defect detection method, which adopts a defect detection machine to detect the defects of crystal grains on a wafer, and comprises the following steps: taking the first direction as a scanning direction, and acquiring the width a of a scanning window of a defect detection machine along the first direction and the width b of a crystal grain along the first direction; calculating the number of scanning windows required for covering the crystal grains along the first direction by using a formula b/a, and eliminating the edge of the crystal grains along the first direction from the set width when a cannot divide b completely and the decimal part of b/a is less than or equal to a first set value; since the edge area of the die is usually a non-functional area and is used for supporting and/or testing, it is not necessary to scan the edge for defects, and after the edge of the die is removed, it is only necessary to perform defect detection on the remaining width of the die in the first direction by using the first direction as the scanning direction, so that the width of the overlapping area along the scanning direction can be reduced, and the efficiency of defect detection can be improved without reducing the precision of defect detection.
Description
Technical Field
The invention relates to the technical field of wafer defect detection, in particular to a defect detection method.
Background
As semiconductor integrated circuits are rapidly developed and the critical dimensions are scaled down, the fabrication processes thereof become more complex. Current advanced integrated circuit fabrication processes typically include hundreds of process steps, and if one of the process steps is defective, it may cause a die defect on the wafer, and may lead to wafer scrap. Therefore, in the industry, the defect inspection machine is used to scan the defects of the dies on the wafer one by one in a certain scanning direction.
The existing defect detection machines are generally classified into a bright field machine, a dark field machine and an electron beam scanning machine. The bright field machine station adopts natural light which is incident perpendicular to the wafer and vertically receives reflected light to form a high-precision image, so that defects in uneven patterns on the wafer can be detected, but the detection speed of the bright field machine station is slow, and the efficiency is not high all the time. As shown in fig. 1, the dies 01 are generally distributed on the wafer 00 in an array along the X direction and the Y direction, and when performing defect detection on a bright field machine, the dies 01 are generally scanned row by row from left to right along the X direction, or the dies 01 are scanned column by column along the Y direction. As shown in fig. 2, taking the scanning direction as the X direction as an example, the scanning window 10 of the bright field machine cannot directly cover the entire row of the dies 01, and for the dies 01 on the same row (only 4 dies 01 on one row are schematically shown in fig. 2), the bright field machine needs the entire row of the dies 01 to be divided into widths of a plurality of scanning windows 10 along the X direction, so that the bright field machine can implement defect detection on the entire row of the dies 01 by translating the scanning window 10 several times. For example, in fig. 2, the entire row of dies 01 is divided into 4 scanning windows 10 along the X direction, and the bright field machine can perform 4 scans to complete the detection of one row of dies 01, and the more the number of scans is, the lower the defect detection efficiency is.
With reference to fig. 2, no matter what bright field apparatus, when defect detection is performed on a row (or a row) of dies 01, a problem occurs in that the last scanning window 10 and the penultimate scanning window 10 have an overlapping region 11 (the width of the die 01 in the scanning direction cannot be covered by an integer number of scanning windows 10), which results in a low utilization rate of the last scanning window 10. Certainly, if the width of the overlapping area 11 along the scanning direction is small, the utilization rate of the last scanning window 10 is high, and the defect detection efficiency is also high; the width of the overlapping area 11 along the scanning direction is large, the utilization rate of the last scanning window 10 is low, and the defect detection efficiency is low, so that the width of the overlapping area 11 along the scanning direction seriously affects the efficiency of the bright field machine. In order to reduce the width of the overlap region 11 in the scanning direction, only the width of the scanning window 10 in the scanning direction can be changed, but this usually sacrifices the accuracy of defect detection.
Disclosure of Invention
The invention aims to provide a defect detection method, which can improve the efficiency of defect detection without reducing the precision of defect detection.
In order to achieve the above object, the present invention provides a defect detecting method for detecting defects of a die on a wafer by using a defect detecting machine, including:
acquiring the width a of a scanning window of the defect detection machine along a first direction, and acquiring the width b of the crystal grain along the first direction by taking the first direction as the scanning direction;
calculating the number of scanning windows required for covering the crystal grains along the first direction by using a formula b/a, and when a cannot divide b completely and the decimal part of b/a is less than or equal to a first set value, excluding the set width from the edge of the crystal grains along the first direction;
and carrying out defect detection on the residual width of the crystal grains in the first direction by taking the first direction as a scanning direction.
Optionally, the width a of the scanning window of the defect detection machine along the first direction is calculated according to the following formula:
a＝Pi*β；
pi is the width of the pixels set by the defect inspection machine, and β is the number of the pixels in the first direction of the scanning window.
Optionally, when a is greater than or equal to a second set value, the first direction is used as a scanning direction to perform defect detection on the crystal grain.
Optionally, when the fractional part of b/a is between the first set value and the second set value, the defect detection method further includes:
taking a second direction as a scanning direction, and acquiring the width c of the crystal grain along the second direction;
calculating the number of scanning windows required for covering the crystal grains along the second direction by using a formula c/a, when a cannot divide c completely and the fractional part of c/a is less than or equal to the first set value, removing the set width from the edge of the crystal grains along the second direction, and performing defect detection on the residual width of the crystal grains in the second direction by taking the second direction as the scanning direction; and when the fraction of a which can divide c or c/a is larger than or equal to the second set value, using the second direction as the scanning direction to detect the defects of the crystal grains.
Optionally, when the fractional part of c/a is between the first set value and the second set value, the width of the pixel set by the defect detection machine is adjusted to adjust at least the width of the scanning window of the defect detection machine along the first direction.
Optionally, the first direction is perpendicular to the second direction.
Optionally, excluding the set width from the edge of the die along the first direction includes:
excluding the set width from one side edge of the die in the first direction, or excluding half of the set width from two side edges of the die in the first direction respectively;
excluding the set width from edges of the die along the second direction comprises:
and excluding the set width from one side edge of the crystal grain in the second direction, or excluding half of the set width from two side edges of the crystal grain in the second direction respectively.
Optionally, the set width m is calculated by using the following formula:
m＝k*a；
wherein k is the fractional part of b/a, or k is the fractional part of c/a.
Optionally, the set width is less than or equal to 80 microns.
Optionally, the first set value is less than or equal to 0.3, and/or the second set value is greater than or equal to 0.7.
In the defect detection method provided by the invention, the defect detection of the crystal grains on the wafer by adopting a defect detection machine comprises the following steps: taking a first direction as a scanning direction, and acquiring the width a of a scanning window of the defect detection machine along the first direction and the width b of the crystal grain along the first direction; calculating the number of scanning windows required for covering the crystal grains along the first direction by using a formula b/a, and when a cannot divide b completely and the decimal part of b/a is less than or equal to a first set value, excluding the set width from the edge of the crystal grains along the first direction; since the edge area of the die is usually a non-functional area and is used for supporting and/or testing, it is not necessary to scan the edge for defects, and after the edge of the die is removed, it is only necessary to perform defect detection on the remaining width of the die in the first direction by using the first direction as a scanning direction, so that the width of the overlapping area along the scanning direction can be reduced, and the defect detection efficiency can be improved without reducing the defect detection accuracy.
Drawings
FIG. 1 is a distribution diagram of dies on a wafer as provided in the background;
FIG. 2 is a flow chart of a conventional brightfield machine for performing defect detection on an entire row of dies, as proposed in the background art;
FIG. 3 is a flowchart of a defect detection method according to an embodiment of the present invention;
FIG. 4 is another flowchart of a defect detection method according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a die provided in an embodiment of the invention;
FIG. 6 is a flowchart illustrating a defect detection process performed on a row of dies after the edges of the dies are removed according to an embodiment of the invention;
wherein the reference numerals are:
00-a wafer; 01-crystal grains; 10-a scanning window; 11-an overlap region;
02-crystal grains; 20-scanning window.
Detailed Description
The following describes in more detail embodiments of the present invention with reference to the schematic drawings. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
For clearly describing the technical scheme of the present invention, in this embodiment, an XY two-dimensional coordinate system is established on the same horizontal plane, where the horizontal right direction is an X direction, and the vertical upward direction is a Y direction.
Fig. 3 is a flowchart of a defect detection method according to an embodiment of the present invention. As shown in fig. 3, the defect detecting method provided in this embodiment, which uses a defect detecting machine to detect the defects of the dies on the wafer, includes:
step S1: acquiring the width a of a scanning window of the defect detection machine along a first direction, and acquiring the width b of the crystal grain along the first direction by taking the first direction as the scanning direction;
step S2: calculating the number of scanning windows required for covering the crystal grains along the first direction by using a formula b/a, and when a cannot divide b completely and the decimal part of b/a is less than or equal to a first set value, excluding the set width from the edge of the crystal grains along the first direction;
step S3: and carrying out defect detection on the residual width of the crystal grains in the first direction by taking the first direction as a scanning direction.
Specifically, the defect inspection machine in this embodiment is, for example, a defect inspection machine produced by AMAT manufacturer or KLA manufacturer. The defect detection machine can have several different detection precisions, and the switching of the detection precisions can be realized by adjusting the size of the pixels of the lens. The scanning window of the defect detection machine consists of a fixed number of pixels, and the size of the scanning window is determined after the size of the pixels is determined. The scanning window is usually a strip-shaped structure, and the crystal grains on the wafer are usually square (even square) with the length and width being not different, so that the scanning window cannot cover the crystal grains, the scanning window is required to be translated for a plurality of times along a fixed direction (scanning direction) by a defect detection machine, and a partial area of the crystal grains is detected each time until the whole crystal grains are detected. Conceivably, when the size of the pixel is large, the detection precision is low, but the size of the scanning window is also large, and the detection efficiency is high; conversely, when the size of the pixel is small, the detection accuracy is high, but the size of the scanning window is small, and the detection efficiency is low.
Referring to fig. 4, in this embodiment, first, the detection accuracy (determined according to the control requirement that the wafer needs to meet) and the scanning direction (for the same defect inspection apparatus, the direction of moving the scanning window is fixed, but the scanning direction can be changed by rotating the wafer) are determined, and then the size of the pixel of the defect inspection apparatus is adjusted, so that the defect inspection apparatus meets the detection accuracy. In this embodiment, the initial scanning direction is the X direction.
Then, since the scanning window is obtained by combining a fixed number of pixels, the width a of the scanning window of the defect inspection machine along the X direction can be calculated according to the following formula:
a＝Pi*β；
wherein Pi is the width of the pixels set by the defect inspection machine, and β is the number of the pixels in the X direction of the scanning window.
Referring to fig. 5, the size and parameters of the die 02 are measured during the manufacturing process of the wafer, so the width b along the X direction and the width c along the Y direction of the die 02 are known.
With reference to fig. 4 and fig. 5, the number g of the scanning windows 20 required for covering the die 02 along the X direction can be calculated according to the width b of the die 02 along the X direction and the width a of the scanning window 20 along the X direction, where g is b/a. When a can divide b completely, g is an integer, the scanning window 20 needs to move g times to detect a row of the crystal grains 02; and when a cannot divide b completely, g is a decimal number, in order to ensure that defect detection is performed at each position on the crystal grain 02, the scanning window 20 needs to move g +1 times to detect a column of the crystal grains 02, and at this time, the last scanning window and the penultimate scanning window have an overlapping area. In addition, in the existing defect detection machine, b/a can not be completely removed almost.
Referring to FIGS. 4 and 6, when a cannot be dividedb and the decimal part of b/a is less than or equal to the first set value, the overlapping area is larger, and the utilization rate of the last scanning window and the penultimate scanning window is low. At this time, the edge exclusion (excluded region non-detection) of the entire row of the crystal grains 02 in the X direction is set to a width m1Therefore, the width of the crystal grain 02 in the X direction, which needs to be detected, is reduced, and the defect detection machine only detects the effective detection area which is not shielded, so that the effective detection area of the crystal grain 02 is changed from the whole crystal grain to the area corresponding to the residual width in the X direction, and the width of the effective detection area in the X direction is reduced. For example, when the first setting value is 0.3, b/a is 3.2, 4 scans are required for the entire row of the crystal grains 02, and the set width m is excluded from the edges of the entire row of the crystal grains 02 in the X direction1Then, b/a is 3, and the whole column of the crystal grains 02 only needs 3 times of scanning, thereby improving the detection efficiency.
To ensure that b/a is an integer, the set width m can be calculated using the following equation1：
m1＝k1*a；
Wherein k is1Is the fractional part of b/a.
Since the peripheral edge of the die 02 is usually a non-functional area for support and/or testing, even if the edge of the die 02 in the X direction is excluded, defect detection is performed only on the remaining width of the die 02 in the X direction, and there is no influence on the defect detection of the die. Of course, the set width is preferably less than or equal to 80 μm to prevent the region in the die 02 where the device structure is formed from being excluded.
As shown in fig. 6, in the present embodiment, m is excluded from two side edges of the crystal grain 02 in the X direction1A width of/2. In other embodiments, m may be excluded from two side edges of the die 02 in the X direction11And m12Let m stand for11+m12＝m1Then the method is finished; or one side edge of the crystal grain 02 in the X direction may be excluded from the set width m1The specific exclusion can be based on the circuit of the dieThe design is determined and the invention is not limited.
Further, when a can divide b exactly, it indicates that the overlap area is almost none; or the decimal part of the b/a is larger than or equal to the second set value, which indicates that the overlapping area is smaller, and the utilization rate of the last scanning window and the penultimate scanning window is higher. For example, when the second set value is 0.7, b/a is 3.9, and 4 scans are required for the entire row of the crystal grains, and in this case, the defect detection may be performed on the crystal grains directly in the X direction as the scanning direction as planned without removing the edges of the crystal grains.
As shown in fig. 4, when the fractional part of b/a is between the first setting and the second setting, it indicates that the overlap area is larger, but it is difficult to detect the whole row of the die by moving the scan window an integer number of times in a manner of excluding the edge of the die (it is necessary to exclude the wider area). At this time, the wafer is rotated so that the scanning direction becomes the Y direction, and the width c of the crystal grain in the Y direction is acquired.
It should be understood that the present invention is not limited to changing the scanning direction by rotating the wafer, and the scanning direction can be changed by rotating the defect inspection machine when the defect inspection machine is moved conveniently.
Calculating the number of scanning windows needed for covering the crystal grains along the Y direction by using a formula c/a, and when a cannot divide c completely and the fractional part of c/a is less than or equal to the first set value, excluding the set width m from the edge of the crystal grains along the Y direction2Detecting the defect of the residual width of the crystal grain in the Y direction by taking the Y direction as a scanning direction; and when the fraction of c or c/a which can be divided by a is larger than or equal to the second set value, using the Y direction as the scanning direction to detect the defects of the crystal grains.
It is understood that the set width m can be calculated using the following formula2：
m2＝k2*a；
Wherein k is2Is the fractional part of c/a.
It is to be understood thatSo as to respectively exclude m from two side edges of the crystal grain in the Y direction2A width of/2; m may be excluded from both side edges of the crystal grain in the Y direction21And m22Let m stand for21+m22＝m2Then the method is finished; or one side edge of the die in the Y direction may be excluded from the set width m2The specific exclusion manner may be determined according to the circuit design scheme of the die, and the invention is not limited.
Further, when the fractional part of c/a is between the first set value and the second set value, it indicates that the detection efficiency is low when the scanning direction is the X direction and the Y direction, and it is difficult to detect the entire row (or row) of the dies by moving the scanning window an integer number of times by excluding the edges of the dies. At this time, the detection accuracy may be changed, that is, the width of the scanning window of the defect detection apparatus along the X direction is adjusted by adjusting the width of the pixel set by the defect detection apparatus, after the adjustment is completed, the width of the scanning window of the defect detection apparatus along the X direction is changed, and then the step S1 is returned to, and the above steps are executed in a loop. Of course, since the number of pixels in the scanning window is fixed, when the width of the pixels is changed, the width of the scanning window along the Y direction is also changed, but the implementation of the present invention is not affected.
Preferably, the detection accuracy can be improved by reducing the size of the pixel, thereby preventing the detection accuracy from being lowered.
The present embodiment is not limited to the first setting value being equal to 0.3 and the second setting value being equal to 0.7, but in an alternative embodiment, the first setting value may be smaller than 0.3, and the second setting value may be larger than 0.7.
In summary, in the defect detecting method provided in the embodiment of the present invention, the defect detecting of the die on the wafer by using the defect detecting machine includes: taking a first direction as a scanning direction, and acquiring the width a of a scanning window of the defect detection machine along the first direction and the width b of the crystal grain along the first direction; calculating the number of scanning windows required for covering the crystal grains along the first direction by using a formula b/a, and when a cannot divide b completely and the decimal part of b/a is less than or equal to a first set value, excluding the set width from the edge of the crystal grains along the first direction; since the edge area of the die is usually a non-functional area and is used for supporting and/or testing, it is not necessary to scan the edge for defects, and after the edge of the die is removed, it is only necessary to perform defect detection on the remaining width of the die in the first direction by using the first direction as a scanning direction, so that the width of the overlapping area along the scanning direction can be reduced, and the defect detection efficiency can be improved without reducing the defect detection accuracy.
The above description is only a preferred embodiment of the present invention, and does not limit the present invention in any way. It will be understood by those skilled in the art that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A defect detection method for detecting defects of crystal grains on a wafer by adopting a defect detection machine is characterized by comprising the following steps:
acquiring the width a of a scanning window of the defect detection machine along a first direction, and acquiring the width b of the crystal grain along the first direction by taking the first direction as the scanning direction;
calculating the number of scanning windows required for covering the crystal grains along the first direction by using a formula b/a, and when a cannot divide b completely and the decimal part of b/a is less than or equal to a first set value, excluding the set width from the edge of the crystal grains along the first direction;
and carrying out defect detection on the residual width of the crystal grains in the first direction by taking the first direction as a scanning direction.
2. The method of claim 1, wherein a width a of the scanning window of the defect inspection tool along the first direction is calculated according to the following formula:
a＝Pi*β；
pi is the width of the pixels set by the defect inspection machine, and β is the number of the pixels in the first direction of the scanning window.
3. The defect detection method of claim 1 or 2, wherein when a is divisible by b or a fraction of b/a is greater than or equal to a second set value, defect detection is performed on the die with the first direction as a scanning direction.
4. The defect detection method of claim 3, wherein when the fractional part of b/a is between the first set value and the second set value, the defect detection method further comprises:
taking a second direction as a scanning direction, and acquiring the width c of the crystal grain along the second direction;
calculating the number of scanning windows required for covering the crystal grains along the second direction by using a formula c/a, when a cannot divide c completely and the fractional part of c/a is less than or equal to the first set value, removing the set width from the edge of the crystal grains along the second direction, and performing defect detection on the residual width of the crystal grains in the second direction by taking the second direction as the scanning direction; and when the fraction of a which can divide c or c/a is larger than or equal to the second set value, using the second direction as the scanning direction to detect the defects of the crystal grains.
5. The method of claim 4, wherein when the fractional part of c/a is between the first set value and the second set value, the width of the pixel set by the defect inspection tool is adjusted to at least adjust the width of the scan window of the defect inspection tool along the first direction.
6. The defect detection method of claim 4 or 5, wherein the first direction is perpendicular to the second direction.
7. The defect detection method of claim 4, wherein excluding the edge of the die along the first direction by the set width comprises:
excluding the set width from one side edge of the die in the first direction, or excluding half of the set width from two side edges of the die in the first direction respectively;
excluding the set width from edges of the die along the second direction comprises:
and excluding the set width from one side edge of the crystal grain in the second direction, or excluding half of the set width from two side edges of the crystal grain in the second direction respectively.
8. The defect detection method of claim 4, wherein the set width m is calculated using the following formula:
m＝k*a；
wherein k is the fractional part of b/a, or k is the fractional part of c/a.
9. The defect detection method of claim 1 or 8, wherein the set width is less than or equal to 80 microns.
10. A defect detection method according to claim 3, characterized in that said first set value is less than or equal to 0.3 and/or said second set value is greater than or equal to 0.7.
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