CN110928135A - Photomask for preventing electrostatic damage and method for preventing electrostatic damage of photomask - Google Patents

Photomask for preventing electrostatic damage and method for preventing electrostatic damage of photomask Download PDF

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CN110928135A
CN110928135A CN201911329388.9A CN201911329388A CN110928135A CN 110928135 A CN110928135 A CN 110928135A CN 201911329388 A CN201911329388 A CN 201911329388A CN 110928135 A CN110928135 A CN 110928135A
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line width
photomask
mask
modules
conductive
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CN110928135B (en
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熊易斯
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Wuhan Xinxin Semiconductor Manufacturing Co Ltd
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Wuhan Xinxin Semiconductor Manufacturing Co Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

The invention relates to the technical field of semiconductor photoetching technology, in particular to a photomask for preventing electrostatic damage, which comprises a plurality of graphic modules and is used for executing a photoetching technology to a wafer, and the photomask also comprises: at least one conducting wire is used for connecting two graphic modules with different electrostatic potentials, so that an equipotential is formed between the two graphic modules. The technical scheme of the invention has the beneficial effects that: the invention provides a photomask for preventing electrostatic damage, wherein a conducting wire is arranged among a plurality of graphic modules of the photomask, so that equipotential is formed among the graphic modules, the transfer of electrostatic charge is avoided, the generation of static electricity can be prevented from the source, the production cost can be saved, and the electrostatic damage can be effectively prevented.

Description

Photomask for preventing electrostatic damage and method for preventing electrostatic damage of photomask
Technical Field
The invention relates to the technical field of semiconductor photoetching technology, in particular to a photomask for preventing electrostatic damage and a method for preventing electrostatic damage of the photomask.
Background
In a semiconductor manufacturing process, a photomask is an important component of the whole process flow, has the characteristics of high price, uniqueness, high environmental sensitivity and the like, and is particularly sensitive to static electricity. Objects with different electrostatic potentials can cause electrostatic charge transfer between objects due to electrostatic induction, and when the energy of an electrostatic field reaches a certain degree, the electrostatic field can break down a medium therebetween to discharge, thereby causing electrostatic damage (Electro-Static discharge defect). In general, the accumulated charges are discharged to a low potential to release energy, and the closer the accumulated charges are, the easier the accumulated charges are to be released. Assuming that E is the electric field strength, U is the voltage, and d is the distance between two graphic modules on the mask, E is U/d, as shown in fig. 1, as the critical dimension is designed to be smaller and smaller, the distance between d is also reduced, even under the environment of constant E electric field strength, the breakdown voltage U is also larger and larger, thereby causing the mask to suffer from electrostatic damage defect, which is the result of the interaction between the mask and the electric field.
In the prior art, in order to avoid mask being damaged due to irreversible electrostatic damage caused by the influence of static electricity on the mask, measures for reducing the generation of static electricity are widely adopted in the semiconductor industry, and the specific measures are as follows: (1) grounding the operation tools of the machine table and the photomask; (2) the humidity is increased, and the relative humidity in the workshop is kept to be more than 45 percent, because the electrostatic charge and the humidity in the air are in an inverse proportion relation, and the high-humidity environment can effectively prevent the generation of static electricity; (3) the photomask and the related tools are made of antistatic materials; (4) an operator wears an electrostatic bracelet, graphite wire dust-free clothes and the like; (5) and the static eliminator generates positive and negative ions to neutralize charged ions so as to eliminate static. However, the above measures greatly increase the production cost, and all belong to passive defense measures, and cannot completely eliminate static electricity.
Disclosure of Invention
In view of the above problems in the prior art, a photomask for preventing electrostatic damage and a method for preventing electrostatic damage of the photomask are provided.
The specific technical scheme is as follows:
the invention includes a photomask for preventing electrostatic damage, the photomask comprises a plurality of graphic modules for executing a photoetching process to the wafer, and the photomask also comprises:
and connecting the two graphic modules with different electrostatic potentials by using at least one conducting wire so as to form an equipotential between the two graphic modules.
Preferably, the photomask is arranged in a machine, and the maximum line width of each wire is smaller than the minimum line width that can be analyzed by the machine.
Preferably, the maximum line width of each of the conductive lines is:
CDmax≤3/4R
wherein the content of the first and second substances,
CDmaxrepresenting a maximum line width of the conductive line;
and R represents the minimum line width which can be analyzed by the machine.
Preferably, the minimum line width R that the machine can analyze is obtained by the following calculation formula:
Figure BDA0002329182670000021
wherein the content of the first and second substances,
k1 represents the overall coefficient of the lithography process;
λ represents a light source wavelength in the photolithography process;
NA is the numerical aperture.
Preferably, the minimum line width of each conductive line is:
CDmin≥1/2R
wherein the content of the first and second substances,
CDminrepresenting a minimum line width of the conductive line;
and R represents the minimum line width which can be analyzed by the machine.
Preferably, the design line width range of the conducting wire is 60-300 nm.
Preferably, the design line width range of the conducting wire is 104-156 nm.
Preferably, the design line width range of the conducting wire is 144-216 nm.
Preferably, the material of the photomask is chromium.
Preferably, all the graphic modules are formed to be equipotential through connection of a lead.
Preferably, the graphic modules are connected by wires to form a polygonal or linear or star-shaped arrangement.
The invention also includes a method for preventing electrostatic damage of a photomask, which is applied to the photomask with a plurality of graphic modules and comprises the following steps:
at least two of the graphic modules having different electrostatic potentials are connected by a wire so that an equipotential is formed between the plurality of graphic modules.
Preferably, the photomask is disposed in a machine, and the maximum line width of the conductive line is calculated by the following formula:
CDmax≤3/4R
wherein the content of the first and second substances,
CDmaxrepresenting a maximum line width of the conductive line;
and R represents the minimum line width which can be analyzed by the machine.
Preferably, the minimum line width of the conductive line is calculated by the following formula:
CDmin≥1/2R
wherein the content of the first and second substances,
CDminrepresenting a minimum line width of the conductive line;
and R represents the minimum line width which can be analyzed by the machine.
The technical scheme of the invention has the beneficial effects that: the invention provides a method for preventing electrostatic damage of a photomask, which is characterized in that a conducting wire is arranged among a plurality of graphic modules of the photomask, so that equipotential is formed among the graphic modules, the transfer of electrostatic charges is avoided, the generation of static electricity can be prevented from the source, the production cost can be saved, and the electrostatic damage can be effectively prevented.
Drawings
Embodiments of the present invention will be described more fully with reference to the accompanying drawings. The drawings are, however, to be regarded as illustrative and explanatory only and are not restrictive of the scope of the invention.
FIG. 1 is a diagram illustrating a mask structure in the prior art;
FIG. 2 is a schematic structural diagram of a mask according to a first embodiment of the present invention;
FIG. 3 is a schematic diagram of a mask according to a second embodiment of the present invention;
FIG. 4 is a schematic diagram of a mask according to a third embodiment of the present invention;
FIG. 5 is a schematic view of a mask according to a fourth embodiment of the present invention;
fig. 6 is a schematic structural diagram of a projection system in an embodiment of the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
The invention is further described with reference to the following drawings and specific examples, which are not intended to be limiting.
The invention includes a photomask for preventing electrostatic damage, which is arranged in a machine, as shown in fig. 2, the photomask 1 includes a plurality of graphic modules 101, and the photomask is arranged above a wafer for executing a photoetching process to the wafer, and the photomask further includes:
every two graphic modules with different electrostatic potentials are connected by a conducting wire 102, so that an equipotential is formed between the two graphic modules 101.
Specifically, in the present embodiment, the mask includes two pattern modules 101, and generally, the electrostatic potentials between the pattern modules 101 are different, so that electrostatic charge transfer between the two pattern modules 101 is caused by electrostatic induction, and when the energy of the electrostatic field reaches a certain level, the dielectric therebetween is broken down to discharge, thereby causing electrostatic damage to the mask. It should be noted that, in the present embodiment, it is preferable to connect all the graphics modules 101 with different potentials, so that all the graphics modules 101 form an equipotential. In addition, only a few pattern modules 101 with a smaller pitch may be connected, because electrostatic breakdown is not likely to occur between pattern modules 101 with a larger pitch, and for cost reasons, the pattern modules with a larger pitch may not be connected by wires 102.
Further, the graphics modules 101 are made of chromium, and as shown in fig. 2, a connecting wire 102 is added between two graphics modules 101 with different electrostatic potentials, so that the two graphics modules 101 are changed from different electrostatic potentials to equal potentials, thereby eliminating the possibility of electrostatic transfer. Compared with the prior art in which the anti-static material and the measure of increasing humidity are adopted, the method of connecting by the lead 102 has lower cost and better anti-static effect. Similarly, as shown in fig. 3, the mask includes four graphic modules 101, and a conducting wire 102 is disposed between the four graphic modules, so that the four graphic modules are connected to form an equipotential to prevent the transfer of electrostatic charges, thereby fundamentally preventing the formation of static electricity.
As a preferred embodiment, the maximum line width of each conductive line 102 is:
CDmax≤3/4R
wherein the content of the first and second substances,
CDmaxrepresents the maximum line width of the conductive line 102;
r represents the minimum line width that the tool can resolve.
Specifically, the mask 1 is disposed in a machine for performing a photolithography process, and is disposed above the wafer, and the photolithography process is to image a pattern on the mask onto the surface of the wafer by using ultraviolet rays, so as to transfer the pattern on the mask onto a photoresist on the surface of the wafer. Since the conductive lines 102 are disposed between the plurality of pattern modules 101 of the photomask, in order to avoid the influence of the existence of the conductive lines 102 on the photolithography process, the maximum line width of each conductive line 102 on the photomask 1 is smaller than the minimum line width that can be analyzed by the machine, and the maximum line width of the conductive line 102 is preferably 3/4R.
As a preferred embodiment, the minimum line width R that can be analyzed by the machine is obtained by the following calculation formula:
Figure BDA0002329182670000061
wherein the content of the first and second substances,
k1 represents the overall coefficient of the lithography process;
λ represents a light source wavelength in the photolithography process;
NA is the numerical aperture.
Specifically, k1 represents a comprehensive coefficient in the photolithography process, the value of k1 is related to each process step in the photolithography process, including but not limited to one or more of an exposure mode, a mask type, an OPC (Optical Proximity Correction), an improvement of a photoresist, and a modification of an exposure machine, the smaller k1 represents the more advanced photolithography process, but the more complicated the technical difficulty and the higher the corresponding process cost, the larger k1 represents the simpler the photolithography process, but the lower the resolution of the machine accordingly, the theoretical limit value of k1 is 0.25, that is, when the value of k1 is 0.25, the resolution of the machine reaches a limit, and the range of k1 is 0.25-0.5. From the above formula, it can be known that the smaller k1, the smaller R represents the minimum line width that the tool can resolve, i.e. the resolution of the tool, and the smaller R indicates the higher resolution of the tool, but as k1 is reduced, the complexity of the photolithography process is increased accordingly. λ represents the wavelength of the light source in the photolithography process, i.e. the wavelength of the ultraviolet, NA is the numerical aperture, and the projection system used in the photolithography process usually uses the numerical aperture NA to describe its performance, as shown in fig. 6, the projection system mainly includes a mask 1 and a lens 2, the lens 2 is disposed between the mask 1 and the wafer 3, and the numerical aperture can be calculated by the following formula:
NA＝n*sina＝D/2f
wherein n is the refractive index of the medium between the lens and the wafer, D is the diameter of the lens, and f is the focal length of the lens. NA can be defined as the product of refractive index and sine of object (or image) to half field angle of the lens aperture, or the ratio of the diameter D of the lens to the focal length f of the 2-fold lens, and it can be known from the above formula that the larger the diameter D of the lens, the higher the wafer can receive high frequency light, and the higher the imaging quality.
As a preferred embodiment, the minimum line width of each conductive line 102 is:
CDmin≥1/2R
wherein the content of the first and second substances,
CDminpresentation guideThe minimum line width of line 102;
r represents the minimum line width that the tool can resolve.
Specifically, considering the production cost of the photomask, the minimum line width of the conductive line 102 is designed to be greater than 1/2R, and meanwhile, since the line width ratio between the photomask and the wafer is 1:4, the image projected by the photomask to the surface of the wafer is reduced by 4 times compared with the actual line width of the photomask, and the line width of the conductive line analyzed by the machine is actually the line width scaled by 4 times, the actual line width of the conductive line on the photomask can be 4 times of the analyzed line width, so as to obtain the design line width of the conductive line 102 in 4CDmin～4CDmaxIn the meantime.
Specifically, the line width intervals of the conductive lines 102 are different for different types of machines. For example, taking ArF bench as an example, the wavelength of the light source is 193nm, k1 is 0.25, and the maximum numerical aperture NAmaxIs 0.93, then
Figure BDA0002329182670000081
The maximum line width CD of the conductive line 102 is deducedMaxLess than 39nm, minimum line width CDminThe designed line width of the conductive line 102 is 26nm, and is 4 × 26-4 × 39nm, i.e., 104-156 nm.
Specifically, for a KrF machine, the wavelength λ of the light source is 248nm, k1 is 0.25, and the maximum numerical aperture NAMaxWhen the value is equal to 0.85, then
Figure BDA0002329182670000082
Calculate the maximum line width CD of the conductive line 102MaxLess than 54nm, minimum linewidth CDminAnd 36nm, and similarly, the designed line width of the push-out wire 102 ranges from 4 × 36 to 4 × 54nm, i.e., 144 to 216 nm.
The invention also includes a method for preventing electrostatic damage of a photomask, which is applied to the photomask with a plurality of graphic modules 101, and comprises the step of connecting the graphic modules 101 with different electrostatic potentials by using a conducting wire so as to form an equipotential among the graphic modules 101.
Specifically, fig. 2 to 5 illustrate various embodiments, and specifically, as shown in fig. 2, the optical mask 1 includes two graphic modules 101, and the two graphic modules 101 are connected to each other by a conducting wire 102. As shown in fig. 3, the mask 1 includes four graphic modules 101, the four graphic modules 101 are connected to each other by four conductive wires 102, and the four conductive wires 102 are arranged in a rectangular shape. As shown in fig. 4, the mask 1 includes five pattern modules 101, the five pattern modules 101 are connected to each other by five wires 102, and the five wires 102 are arranged in a pentagon shape with a wide top and a narrow bottom. As shown in fig. 5, the mask 1 includes six graphic modules 101, the six graphic modules 101 are connected to each other by five wires 102, and the five wires 102 are arranged in a line.
It should be noted that the number of the conductive wires 102 is related to the number and layout of the graphic modules 101, and all the graphic modules 101 with different electrostatic potentials are connected by the conductive wires 102, so that an equipotential is formed between the plurality of graphic modules 101, electrostatic charge transfer is avoided, and generation of static electricity is fundamentally prevented.
As a preferred embodiment, the maximum line width of the conductive line 102 is calculated by the following formula:
CDmax≤3/4R
wherein the content of the first and second substances,
CDmaxrepresents the maximum line width of the conductive line 102;
r represents the minimum line width that the tool can resolve.
Specifically, the minimum line width R is calculated by the following formula:
Figure BDA0002329182670000091
wherein the content of the first and second substances,
k1 represents the overall coefficient of the lithography process;
λ represents a light source wavelength in the photolithography process;
NA is the numerical aperture.
Specifically, k1 represents a comprehensive coefficient in the photolithography process, k1 ranges from 0.25 to 0.5, λ represents a light source wavelength in the photolithography process, that is, a wavelength of ultraviolet rays, and NA represents a numerical aperture, and it can be known from the above formula that R can be reduced by reducing k1 and increasing NA, R is a minimum line width that can be analyzed by the machine, and a smaller R indicates a higher resolution of the machine. It should be noted that the value of k1 is related to various process steps in the photolithography process, including an exposure mode, a mask type, an OPC (Optical Proximity Correction) mode, an improvement of a photoresist, and a modification of an exposure machine, where a smaller k1 indicates a more complicated photolithography process and a higher corresponding required cost, a larger k1 indicates a simpler photolithography process, but a correspondingly lower resolution of the machine, and a theoretical limit value of k1 is 0.25, that is, when the value of k1 is 0.25, the resolution of the machine reaches a limit.
Projection systems for lithographic processes typically incorporate a numerical aperture NA to describe the performance of the projection system, which is calculated by the following formula:
NA＝n*sina＝D/2f
wherein the content of the first and second substances,
d is the diameter of the lens;
f is the focal length of the lens;
as a preferred embodiment, the minimum line width of the conductive line 102 is calculated by the following formula:
CDmin≥1/2R
wherein the content of the first and second substances,
CDminrepresents the minimum line width of the conductive line 102;
r represents the minimum line width that the tool can resolve.
The technical scheme of the invention has the beneficial effects that: the invention provides a photomask for preventing electrostatic damage, wherein a conducting wire is arranged among a plurality of graphic modules of the photomask, so that equipotential is formed among the graphic modules, the transfer of electrostatic charge is avoided, the generation of static electricity can be prevented from the source, the production cost can be saved, and the electrostatic damage can be effectively prevented.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.

Claims (12)

1. A reticle for preventing electrostatic damage, the reticle comprising a plurality of graphics modules for performing a photolithography process on a wafer, the reticle further comprising:
at least two different electrostatic potential graphic modules are connected through a lead, so that an equipotential is formed between the two graphic modules.
2. The mask of claim 1, wherein the mask is disposed in a tool, and a maximum line width of each of the conductive lines is smaller than a minimum line width that can be resolved by the tool.
3. The mask of claim 2, wherein the maximum line width of each of the conductive lines is:
CDmax≤3/4R
wherein the content of the first and second substances,
CDmaxrepresenting a maximum line width of the conductive line;
and R represents the minimum line width which can be analyzed by the machine.
4. The mask according to claim 3, wherein the minimum line width R that the tool can resolve is obtained by the following calculation formula:
Figure FDA0002329182660000011
wherein the content of the first and second substances,
k1 represents the overall coefficient of the lithography process;
λ represents a light source wavelength in the photolithography process;
NA is the numerical aperture.
5. The mask according to claim 2 or 3, wherein the minimum line width of each conductive line is:
CDmin≥1/2R
wherein the content of the first and second substances,
CDminrepresenting a minimum line width of the conductive line;
and R represents the minimum line width which can be analyzed by the machine.
6. The mask according to claim 1, wherein the designed line width of the conductive line is in a range of 60 to 300 nm.
7. The mask of claim 1, wherein the mask is made of chrome.
8. The mask of claim 1, wherein the connections by wires are such that all of the pattern blocks form an equipotential.
9. The mask according to claim 8, wherein the pattern modules are connected by wires to form a polygonal or linear or star-shaped arrangement.
10. A method for preventing electrostatic damage of a photomask is applied to the photomask with a plurality of graphic modules, and is characterized by comprising the following steps:
at least two of the graphic modules having different electrostatic potentials are connected by a wire so that an equipotential is formed between the plurality of graphic modules.
11. The method of claim 10, wherein the mask is placed in a tool, and the maximum line width of the conductive line is calculated by the following formula:
CDmax≤3/4R
wherein the content of the first and second substances,
CDmaxrepresenting a maximum line width of the conductive line;
and R represents the minimum line width which can be analyzed by the machine.
12. The method of claim 11, wherein the minimum line width of the conductive line is calculated by the following formula:
CDmin≥1/2R
wherein the content of the first and second substances,
CDminrepresenting a minimum line width of the conductive line;
and R represents the minimum line width which can be analyzed by the machine.
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