CN110908146A - Silicon-based integrated tunable band-pass filter - Google Patents

Silicon-based integrated tunable band-pass filter Download PDF

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CN110908146A
CN110908146A CN201911278397.XA CN201911278397A CN110908146A CN 110908146 A CN110908146 A CN 110908146A CN 201911278397 A CN201911278397 A CN 201911278397A CN 110908146 A CN110908146 A CN 110908146A
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micro
ring
microring
mzi
silicon
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张敏明
姚欣怡
刘德明
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Huazhong University of Science and Technology
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Huazhong University of Science and Technology
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/0147Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on thermo-optic effects
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/212Mach-Zehnder type

Abstract

The invention discloses a silicon-based integrated tunable band-pass filter, which relates to the field of silicon-based photonics and integrated optoelectronics, and comprises two multimode interference couplers forming MZI, three micro-rings and a plurality of heating electrodes, wherein the first micro-ring and the second micro-ring are cascaded with an upper arm of the MZI, the third micro-ring is cascaded with a lower arm, the heating electrodes are arranged on the lower arm of the MZI, and the heating electrodes are arranged on each micro-ring; by designing the coupling coefficients of the three micro-rings, interference is introduced by the MZI structure to realize coherent constructive inside the passband and coherent destructive outside the passband, so that the bandpass filtering has a high form factor; the effective refractive index of the waveguide of each ring is tuned by adjusting the heating electrodes on the three micro-rings, the resonance condition of each ring is changed, the resonance wavelength of each ring is tuned, and the tuning of the bandwidth and the central wavelength of the total band-pass filtering is realized. The invention keeps high form factor on the basis of realizing the tunable bandwidth and central wavelength, and improves the performance of the microwave photon band-pass filter.

Description

Silicon-based integrated tunable band-pass filter
Technical Field
The invention belongs to the technical field of optical fiber communication and integrated photonics, and particularly relates to a silicon-based integrated tunable band-pass filter.
Background
Optical communication is one of the most important modes for modern information transmission, and is moving towards ultra-high speed, large capacity, large broadband, long distance, and low cost. The optical filter is used for selecting and passing optical signals with specific wavelengths and filtering optical signals with other wavelengths, and is an important device in all-optical signal processing and wavelength division multiplexing systems. The micro-ring filter is one of optical filters. The filter based on the passive micro-ring, such as a silicon micro-ring and a silicon nitride micro-ring, processes the optical signal by utilizing the amplitude response and the phase response characteristics of the micro-ring to realize the filtering function; good center frequency tuning can be achieved by utilizing thermo-optic effect, plasma dispersion effect and the like, and good reconstruction is achieved by using various structures. Furthermore, due to the inherent integratability advantages of microrings, they are widely used in the fabrication of integrated optical filters.
Optical communication has a high requirement on the rectangularity of the filter waveform. Due to the fact that the micro-ring is low in shape factor value and poor in rectangularity, the problem that the shape factor value is low generally exists in the existing tunable optical filter scheme using the micro-ring structure. The existing scheme improves the shape factor of the filter by combining a plurality of micro-rings, but because the bandwidth tuning of the multi-ring combination scheme is mainly realized by changing the difference between the resonance wavelengths of the rings, the shapes of the rising edge and the falling edge of the total filtering waveform are almost kept unchanged in the tuning process, which means that the narrower the bandwidth of the filter, the poorer the shape factor and the poorer the rectangularity of the filtering waveform. These multi-loop combining schemes are all solutions for wide bandwidth (> 25GHz) filtering cases with limited enhancement to the form factor.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a silicon-based integrated tunable band-pass filter, which aims to solve the technical problem that a narrow-linewidth filter based on a micro-ring structure is low in shape factor value, so that the narrow-linewidth tunable band-pass filter capable of keeping a high shape factor in a bandwidth tuning process is obtained.
In order to achieve the above object, the present invention provides a silicon-based integrated tunable bandpass filter, which includes a first multimode interference coupler, a second multimode interference coupler, a first micro-ring, a second micro-ring, a third micro-ring, and a first heating electrode;
the first multimode interference coupler and the second multimode interference coupler form a Mach Zehnder Interferometer (MZI), an upper arm of an output end of the first multimode interference coupler is connected with an upper arm of an input end of the second multimode interference coupler through a straight waveguide to form an upper arm of the MZI, and a lower arm of an output end of the first multimode interference coupler is connected with a lower arm of an input end of the second multimode interference coupler through a straight waveguide to form a lower arm of the MZI;
the first micro ring and the second micro ring are both coupled with a straight waveguide of an upper arm of the MZI, and the first micro ring and the second micro ring are not coupled with each other, so that periodic trapped wave transmission spectrums with different resonant wavelengths are respectively generated; the third microring is coupled with a straight waveguide of a lower arm of the MZI;
the first heating electrode is arranged on the straight waveguide of the MZI lower arm;
and the first micro ring, the second micro ring and the third micro ring are provided with heating electrodes on the annular waveguide and the coupling area.
Further, when a bias is applied to the heating electrodes disposed on the annular waveguides of the first, second, and third micro-rings, the resonant wavelength of each micro-ring changes.
Further, the resonant wavelengths of the first micro-ring and the second micro-ring are respectively located at two sides of the resonant wavelength of the third micro-ring and are symmetrically distributed.
Further, when a bias voltage is applied to the heating electrodes disposed on the coupling regions of the first, second, and third micro-rings, the coupling coefficient of each micro-ring changes.
Further, the coupling coefficients of the first micro-ring and the second micro-ring are the same and different from the coupling coefficient of the third micro-ring.
Further, the first heating electrode is used for tuning the phase relation of the optical signals of the upper arm and the lower arm of the MZI, and the additional phase introduced by the first heating electrode enables coherent in-band and coherent out-of-band cancellation to be achieved at the second multimode interference coupler.
Furthermore, the first multimode interference coupler is used for splitting an optical wave beam, dividing an optical signal into an upper path and a lower path, and respectively sending the optical signal to an upper arm and a lower arm of the MZI for further processing; the second multimode interference coupler is used for interfering and combining beams, and combining the two processed optical signals into one path.
Preferably, the micro-ring radius R of the first micro-ring, the second micro-ring and the third micro-ring is the same as the waveguide size, wherein R is more than or equal to 2um and less than or equal to 300 um.
Preferably, a silicon material is used.
Preferably, the straight waveguide and the annular waveguide adopt a strip waveguide or ridge waveguide structure; the waveguide width W satisfies: w is more than or equal to 450nm and less than or equal to 600nm, and the waveguide height h satisfies the following condition: h is more than or equal to 150nm and less than or equal to 300 nm.
Through the technical scheme, compared with the prior art, the invention can obtain the following beneficial effects:
(1) according to the silicon-based integrated tunable band-pass filter provided by the invention, interference is introduced by adopting a Mach Zehnder interference structure, through design, the coherent lengthening of the MZI upper arm and the lower arm can be just realized in a passband, and the coherent cancellation of the MZI upper arm and the lower arm can be realized outside the passband.
(2) The silicon-based integrated tunable band-pass filter provided by the invention combines the transmission spectrums of the three micro-rings, so that the bandwidth can be tunable within a GHz-level narrow line width range, and better filtering performance can be kept. Moreover, the tunability of the filter is achieved by the heating electrodes on the microring: the effective refractive index of the waveguide is changed by utilizing the thermo-optic effect, so that the resonance wavelength of the micro-ring is changed, and the central wavelength of the optical filter is adjustable; the difference value between the resonant wavelength of the two micro-rings on the upper arm and the resonant wavelength of the single ring on the lower arm is adjusted by designing the power of the heating electrodes on the three micro-rings, so that the bandwidth of the optical filter is adjustable.
Drawings
Fig. 1 is a schematic structural diagram of a silicon-based integrated tunable bandpass filter provided by the present invention;
FIG. 2 is a simulation result of phase responses of the upper arm and the lower arm of the MZI and phase differences of the upper arm and the lower arm of the MZI in the embodiment;
FIG. 3 is a simulation result of the amplitude response of the upper and lower arms and the total output of the MZI in the example;
FIG. 4 is a simulation result of bandwidth tuning of an embodiment;
fig. 5 is a graph of the shape factor SF as a function of bandwidth during narrow line bandwidth tuning for an embodiment.
In the figure: 1-a first multimode interference coupler, 2-a second multimode interference coupler, 3-a first microring, 4-a second microring, 5-a third microring, 6-a first heating electrode, 7-a second heating electrode, 8-a third heating electrode, 9-a fourth heating electrode, 10-a fifth heating electrode, 11-a sixth heating electrode, and 12-a seventh heating electrode.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Fig. 1 is a schematic structural diagram of a silicon-based integrated tunable bandpass filter provided by the present invention, which includes a first multimode interference coupler 1, a second multimode interference coupler 2, a first microring 3, a second microring 4, a third microring 5, a first heating electrode 6, a second heating electrode 7, a third heating electrode 8, a fourth heating electrode 9, a fifth heating electrode 10, a sixth heating electrode 11, and a seventh heating electrode 12.
The MZI (Mach Zehnder interference, Mach Zehnder interferometer) is formed by a first multimode interference coupler 1 and a second multimode interference coupler 2, the upper arm of the output end of the first multimode interference coupler 1 is connected with the upper arm of the input end of the second multimode interference coupler 2 through a straight waveguide to form an upper arm of the MZI, the lower arm of the output end of the first multimode interference coupler 1 is connected with the lower arm of the input end 2 of the second multimode interference coupler through a straight waveguide to form a lower arm of the MZI, and the upper arm and the lower arm of the MZI are equal in length; the input end of the first multimode interference coupler 1 is the input end of the whole filter, and the output end of the second multimode interference coupler 2 is the output end of the filter; the first multimode interference coupler 1 is used for splitting an optical wave, dividing an optical signal into an upper path and a lower path, and respectively sending the optical signal to an upper arm and a lower arm of an MZI for further processing; the second multimode interference coupler 2 is used for interfering and combining beams, and combining two paths of optical signals processed by the microring into one path.
The first micro-ring 3 and the second micro-ring 4 are sequentially coupled with the MZI upper arm straight waveguide and are used for processing optical signals of an MZI upper arm, optical field coupling does not occur between the first micro-ring 3 and the second micro-ring 4, and periodic trapped wave transmission spectrums with different resonant wavelengths are respectively generated; the third microring 5 is coupled to the MZI lower arm straight waveguide for processing the optical signal of the MZI lower arm to generate a periodic notch transmission spectrum.
And each micro-ring is provided with a heating electrode on the annular waveguide and the coupling region, and a first heating electrode 6 is arranged on the straight waveguide of the MZI lower arm. The first heating electrode 6 acts on the MZI lower arm straight waveguide for tuning the phase relationship of the MZI upper and lower arm optical signals, and a reasonable additional phase introduced by the first heating electrode 6 needs to be designed, so that coherent in-band and coherent out-of-band cancellation are realized at the second multimode interference coupler 2.
The second heating electrode 7, the third heating electrode 8 and the fourth heating electrode 9 respectively act on the annular waveguides of the first micro-ring 3, the second micro-ring 4 and the third micro-ring 5, different bias voltages are loaded on the heating electrodes, the effective refractive indexes of the annular waveguides of the first micro-ring 3, the second micro-ring 4 and the third micro-ring 5 are changed by using the thermo-optic effect, the resonance condition of each ring is changed, and the resonance wavelength lambda of each ring can be further changed1、λ2、λ3. By designing and tuning the distribution of the resonant wavelengths of the three micro-rings, the design and tuning of the bandwidth and the center wavelength of the whole band-pass filter can be realized.
The resonant wavelengths of the three microrings can be independently adjusted. Preferably, when the optical band-pass filter works, the resonance wavelengths of the first micro-ring and the second micro-ring are respectively located at two sides of the resonance wavelength of the third micro-ring and are symmetrically distributed; the bandwidth of the band-pass filtering of the filter is changed by changing the difference value of the resonance wavelength of the first micro-ring and the resonance wavelength of the second micro-ring and the resonance wavelength of the third micro-ring, and the central wavelength of the band-pass filter is changed by synchronously tuning the resonance wavelength of the first micro-ring, the resonance wavelength of the second micro-ring and the resonance wavelength of the third micro-ring.
The fifth heating electrode 10 and the sixth heating electrode 11 respectively act on the coupling areas of the first micro-ring 3, the second micro-ring 4 and the MZI upper arm straight waveguide, the seventh heating electrode 12 acts on the coupling areas of the third micro-ring 5 and the MZI lower arm straight waveguide, different bias voltages are loaded on the heating electrodes, the effective refractive indexes of the first micro-ring coupling area waveguide, the second micro-ring coupling area waveguide and the third micro-ring coupling area waveguide are changed by utilizing the thermo-optical effect, and the tuning of the coupling coefficients of the rings and the straight waveguide is realized. The coupling coefficients of the three micro-rings can be adjusted independently, the design is reasonable, and preferably, the coupling coefficients of the first micro-ring 3 and the second micro-ring 4 are the same and different from the coupling coefficient of the third micro-ring 5.
Preferably, the micro-ring radii of the first micro-ring, the second micro-ring and the third micro-ring are the same as the waveguide size; the radius R of the micro-ring satisfies: r is more than or equal to 2um and less than or equal to 300um, and the bending loss is large when the radius is too small; the radius is too large, the wavelength interval between resonance peaks is small, and when the optical filter is used as an optical filter, a plurality of wavelengths can be filtered out and are not easy to distinguish.
Preferably, the material used for the optical band-pass filter is silicon material.
Preferably, the waveguide adopts a strip waveguide or ridge waveguide structure. The waveguide width W satisfies: w is more than or equal to 450nm and less than or equal to 600nm, when the waveguide width is too narrow, the transmission loss is large, and when the waveguide width is too wide, multimode transmission exists in the waveguide, so that a plurality of resonance peaks exist, and the required transmission rate of the resonance peak of the fundamental mode is reduced; the waveguide height h satisfies: h is more than or equal to 150nm and less than or equal to 300nm so as to ensure that only a fundamental mode is transmitted in the waveguide.
And aiming at different bandwidth tuning range requirements, obtaining corresponding structural parameters and design parameters, namely the coupling coefficients and the resonant wavelengths of the three micro-rings through reverse design. Taking a narrow-linewidth tunable band-pass filter with a bandwidth tuning range of 2-4GHz as an example: the radius of the micro-ring is 50 microns, the width of the waveguide is 450nm, and the thickness of the waveguide is 220 nm; the coupling coefficients of the first micro-ring, the second micro-ring and the third micro-ring and the straight waveguide are 0.022, 0.022 and 0.057 respectively; maintaining the resonant wavelength λ of the third micro-ring during tuning3Resonance wavelength lambda at the first microring1And the resonance wavelength λ of the second microring2InIn between, i.e. with a difference in resonant wavelength Δ λ ═ λ31=λ23
In the process of bandwidth tuning, when the resonance wavelengths of the first micro-ring, the second micro-ring and the third micro-ring are respectively set as lambda1=1549.3677nm、λ2=1549.3892nm、λ3The simulation results of the phase response and the MZI upper and lower arm phase difference of the corresponding MZI upper and lower arms at 1549.37845nm are shown in fig. 2, and the simulation results of the amplitude response of the corresponding MZI upper and lower arms and the total output are shown in fig. 3.
Referring to fig. 2, the fundamental properties of the micro-ring are that the first micro-ring 3 and the second micro-ring 4 are respectively at the resonant wavelength λ1、λ2Introducing 2 pi phase shift quantity nearby to obtain the phase response curve of the upper arm of the MZI; third microring 5 at resonant wavelength λ3Introducing 2 pi phase shift amount nearby, and introducing pi phase shift by a first heating electrode 6 on the MZI lower arm to obtain the phase response curve of the MZI lower arm; and subtracting the phase responses of the upper arm and the lower arm of the MZI to obtain a phase difference curve of the upper arm and the lower arm.
As shown in FIG. 3, the amplitude response curve of the upper arm of MZI is the amplitude response processed by the first micro-ring 3 and the second micro-ring 4 at λ1、λ2Trapped waves appear at all positions; the amplitude response curve of the MZI lower arm is the amplitude response processed by the third micro-ring, and is at lambda3A trapped wave appears; the amplitude response curve of the total output is the amplitude response after the interference of the second multimode interference coupler and the integration of the upper and lower optical signals, namely the amplitude response curve of the band-pass filter, and the curve shows that the central wavelength of the filter is positioned at lambda3To (3).
Referring to fig. 2 and 3: from the upper and lower arm phase difference curves in FIG. 2, at λ3The nearby phase difference is 2k pi (where k is an integer), i.e., where coherent constructive values are achieved, corresponding to the filtered passband of the total output line in FIG. 3; at a distance of lambda3The phase difference at (2k +1) pi (where k is an integer) is where coherent cancellation can be achieved, corresponding to the filtered passband of the total output spectral line in fig. 3. Thus realizing the effects of coherent phase in the pass band and coherent phase cancellation outside the pass band,while having a high form factor without degrading insertion loss.
Fig. 4 shows a process of tuning the bandwidth from 2GHz to 4GHz, which includes: the resonance wavelength lambda of the third micro-ring3Fixed at 1549.37845nm, and tuning resonance wavelength λ of the first and second microrings1And λ2And the total output bandwidth of the filter can be tunable at 2-4GHz by tuning the delta lambda within the range of 0.00795-0.01525 nm. The shape factor SF versus bandwidth curve during narrow linewidth bandwidth tuning is shown in fig. 5. Wherein the shape factor SF of the band pass filter is defined as:
Figure BDA0002315111200000071
the curve shown in fig. 5 shows that the form factor of the filter can be maintained at a level above 0.55 during the tuning process, which achieves a significant improvement in the form factor, and meanwhile, the in-band ripple is controlled within 1dB, the extinction ratio is greater than 25dB, and the filtering performance is improved.
The invention adds different bias voltages on the heating electrode on the annular waveguide of the micro-ring, changes the effective refractive index of the waveguide by using the thermo-optic effect, changes the resonance condition of each ring, further changes the resonance wavelength of the micro-ring, and realizes the tunability of the band-pass filter: when the resonant wavelengths of the three micro-rings are synchronously tuned, the tuning of the center wavelength of the band-pass filter can be realized; when the resonant wavelength of the third micro-ring is fixed and the resonant wavelengths of the first micro-ring and the second micro-ring are tuned, the band-pass filter can be tunable in bandwidth. The invention can realize the regulation and control of each micro-ring coupling coefficient by applying different bias voltages to the heating electrodes on the coupling area of the micro-ring, changing the effective refractive index of the waveguide by using the thermo-optic effect and changing the coupling coefficient of the curved waveguide and the straight waveguide of the micro-ring, thereby overcoming the influence of process errors on the performance of the device and realizing different coupling coefficient combinations on the same device so as to be suitable for application scenes with different bandwidth tuning range requirements.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.

Claims (10)

1. A silicon-based integrated tunable band-pass filter is characterized by comprising a first multimode interference coupler (1), a second multimode interference coupler (2), a first micro-ring (3), a second micro-ring (4), a third micro-ring (5) and a first heating electrode (6);
the first multimode interference coupler (1) and the second multimode interference coupler (2) form a Mach Zehnder Interferometer (MZI), the upper arm of the output end of the first multimode interference coupler (1) is connected with the upper arm of the input end of the second multimode interference coupler (2) through a straight waveguide to form an upper arm of the MZI, and the lower arm of the output end of the first multimode interference coupler (1) is connected with the lower arm of the input end (2) of the second multimode interference coupler through a straight waveguide to form a lower arm of the MZI;
the first micro ring (3) and the second micro ring (4) are both coupled with a straight waveguide of an upper arm of the MZI, and the first micro ring (3) and the second micro ring (4) are not coupled with each other, so that periodic trapped wave transmission spectrums with different resonant wavelengths are respectively generated; the third microring (5) is coupled with a straight waveguide of the MZI lower arm;
the first heating electrode (6) is arranged on the straight waveguide of the MZI lower arm;
and the first micro ring (3), the second micro ring (4) and the third micro ring (5) are provided with heating electrodes on the annular waveguide and the coupling area.
2. The silicon-based integrated tunable bandpass filter according to claim 1, wherein when a bias is applied to the heating electrodes disposed on the ring waveguides of the first microring (3), the second microring (4), and the third microring (5), the resonant wavelength of each microring changes.
3. The silicon-based integrated tunable bandpass filter according to claim 2, wherein the resonant wavelengths of the first microring (3) and the second microring (4) are located on both sides of the resonant wavelength of the third microring (5) and are symmetrically distributed.
4. The silicon-based integrated tunable bandpass filter according to claim 1, wherein the coupling coefficient of each microring is changed when a bias voltage is applied to the heating electrodes disposed on the coupling regions of the first microring (3), the second microring (4) and the third microring (5).
5. A silicon-based integrated tunable bandpass filter according to claim 4, characterized in that the coupling coefficients of the first microring (3) and the second microring (4) are the same and different from the coupling coefficient of the third microring (5).
6. A silicon-based integrated tunable bandpass filter according to claim 1, characterized in that the first heater electrode (6) is used to tune the phase relationship of the MZI upper and lower arm optical signals, the additional phase introduced by the first heater electrode (6) being such that coherent in-band coherent cancellation and out-of-band coherent cancellation are achieved at the second multimode interference coupler (2).
7. The silicon-based integrated tunable bandpass filter according to claim 1, wherein the first multimode interference coupler (1) is used for splitting an optical wave beam, and dividing the optical signal into an upper path and a lower path, and respectively sending the optical signal to an upper arm and a lower arm of an MZI for further processing; the second multimode interference coupler (2) is used for interfering and combining beams and combining the two processed optical signals into one path.
8. The silicon-based integrated tunable bandpass filter according to any one of claims 1 to 7, wherein the microring radii R of the first microring (3), the second microring (4) and the third microring (5) are the same as the waveguide size, wherein R is greater than or equal to 2um and less than or equal to 300 um.
9. A silicon-based integrated tunable bandpass filter according to any one of claims 1 to 7 wherein the tunable bandpass filter is made of silicon material.
10. The silicon-based integrated tunable bandpass filter according to any one of claims 1 to 7, wherein the straight waveguide and the annular waveguide adopt a strip waveguide or a ridge waveguide structure; the waveguide width W satisfies: w is more than or equal to 450nm and less than or equal to 600nm, and the waveguide height h satisfies the following condition: h is more than or equal to 150nm and less than or equal to 300 nm.
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CN113029218A (en) * 2021-03-11 2021-06-25 西北大学 Vernier effect optical fiber interference sensor demodulation device and method based on silicon-based micro-ring
CN113934020A (en) * 2021-09-23 2022-01-14 中国地质大学(武汉) Ultra-narrow bandwidth tunable optical filter based on high Q value micro-ring
CN114609725A (en) * 2020-12-08 2022-06-10 军事科学院***工程研究院网络信息研究所 Ultra-narrow band filtering method based on micro-detuning cascade filter
CN115165102A (en) * 2022-09-02 2022-10-11 之江实验室 Large-bandwidth high-resolution compact on-chip spectrometer and detection method

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