CN110904437A - Film preparation equipment and reaction chamber thereof - Google Patents
Film preparation equipment and reaction chamber thereof Download PDFInfo
- Publication number
- CN110904437A CN110904437A CN201811076455.6A CN201811076455A CN110904437A CN 110904437 A CN110904437 A CN 110904437A CN 201811076455 A CN201811076455 A CN 201811076455A CN 110904437 A CN110904437 A CN 110904437A
- Authority
- CN
- China
- Prior art keywords
- exhaust
- reaction chamber
- flow passage
- gas
- wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000007789 gas Substances 0.000 claims abstract description 74
- 239000012495 reaction gas Substances 0.000 claims abstract description 44
- 230000002093 peripheral effect Effects 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 24
- 239000010409 thin film Substances 0.000 claims description 15
- 238000007599 discharging Methods 0.000 claims description 2
- 238000005086 pumping Methods 0.000 description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 10
- 239000007921 spray Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- -1 silicon carbide nitride Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45559—Diffusion of reactive gas to substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a film preparation device and a reaction chamber thereof. Comprises a cavity and an object carrying platform arranged in the cavity; the cavity includes: the gas inlet is arranged above the carrying platform and used for inputting reaction gas; the cylindrical side wall is provided with a plurality of exhaust holes which are positioned at the same horizontal height, are formed by the concave inner peripheral wall of the side wall and are distributed around the loading platform; the exhaust runner is communicated with each exhaust hole; when the exhaust channel is used for exhausting air, the air above the loading platform flows uniformly from the middle to the periphery. The film prepared by the reaction chamber is more uniform.
Description
Technical Field
The invention relates to the field of semiconductor processing, in particular to a thin film preparation device and a reaction chamber thereof.
Background
In today's semiconductor industry, hard masks are primarily used in multiple lithography processes, where multiple photoresist images are first transferred to a hard mask, and the final pattern is then etch-transferred through the hard mask to the substrate.
To meet the demand for narrower and narrower critical dimensions of integrated circuits, higher resolution patterns need to be fabricated, and the photoresist thickness must be reduced accordingly to increase the accuracy of pattern transfer. Therefore, a material with a high selectivity ratio is needed as a hard mask to reduce the thickness of the photoresist, especially for pattern transfer at high aspect ratios in advanced processes below 70 nm.
In the prior art, silicon nitride, silicon carbide nitride, amorphous silicon, carbon film and other films can be used as hard masks. However, for a silicon oxide film as a substrate or a silicon oxide film doped with boron, phosphorus or fluorine, the carbon film is manufactured at a low cost, and thus the carbon film is often used for a photoresist pattern transfer layer or a hard mask layer with a high aspect ratio.
However, the uniformity of the thickness of the carbon film grown in the prior art is low, which results in low yield of the final product.
The above information disclosed in this background section is only for enhancement of understanding of the background of the invention and therefore it may contain information that does not constitute prior art that is already known to a person of ordinary skill in the art.
Disclosure of Invention
In this summary, concepts in a simplified form are introduced that are further described in the detailed description. This summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
The inventors have found through extensive practice that the non-uniformity of the thickness of the carbon thin film is caused by the non-uniform flow of the reaction gas over the wafer. As shown in fig. 1, fig. 1 is a schematic cross-sectional view of a reaction chamber 1a of a carbon thin film formation apparatus. The reaction chamber 1a includes a barrel 11a, a top wall 13a, a bottom wall 12a, an exhaust ring, and a stage 14 a. The top wall 13a and the bottom wall 12a block both ends of the column body 11a, respectively. The cylinder 11a is vertically arranged, the top wall 13a is positioned above the cylinder 11a, and the bottom wall 12a is positioned at the bottom of the cylinder 11 a. The top wall 13a is provided with an air inlet 131 a. The gas inlet 131a is for the reaction gas. The stage 14a is disposed in the cylinder 11 a. The stage 14a is used for placing the wafer 2. The cylinder 11a is provided with an annular groove 112a having an inner wall recessed inward. The pumping ring is disposed coaxially with the annular groove 112a, and covers an opening on the annular groove 112 a. The inner wall of the annular groove 112a and the pumping ring 113a enclose an annular flow passage 111 a. As shown in FIG. 2, the pumping ring 113a is provided with a plurality of exhaust holes 114a uniformly distributed. The exhaust holes 114a are all communicated with the annular flow passage 111 a. The cylinder 11a is further provided with an air outlet 115 a. One end of the air outlet 115a is communicated with the annular flow passage 111a, and the other end is communicated with a vacuum pump. After the vacuum pump is started, the gas in the cylinder 11a is discharged through the gas discharge hole 114a, the annular flow passage 111a, and the gas discharge hole 115a in this order. However, since some of the exhaust holes 114a are close to the gas outlet 115a and some of the exhaust holes 114a are far from the gas outlet 115a, the exhaust holes 114a close to the gas outlet 115a absorb gas faster and the exhaust holes 114a far from the gas outlet 115a absorb gas slower, so that the flow rate of the reaction gas on one side of the surface of the wafer 2 is faster and the flow rate on the other side is slower, thereby causing the reaction gas to be thicker on one side and thinner on the other side of the thickness of the thin film deposited on the surface of the wafer 2.
One technical problem to be solved by the present invention is how to make the thickness of the thin film generated on the wafer more uniform.
A primary object of the present invention is to overcome at least one of the above-mentioned drawbacks of the prior art, and to provide a reaction chamber of a thin film formation apparatus, which includes a chamber and a stage disposed in the chamber; the cavity includes: the gas inlet is arranged above the carrying platform and used for inputting reaction gas; the cylindrical side wall is provided with a plurality of exhaust holes which are positioned at the same horizontal height, are formed by the concave inner peripheral wall of the side wall and are distributed around the loading platform; the exhaust runner is communicated with each exhaust hole;
when the exhaust channel is used for exhausting air, the air above the loading platform flows uniformly from the middle to the periphery.
According to one embodiment of the invention, the exhaust flow passage comprises an annular flow passage arranged in the side wall and two first passages respectively communicated with two symmetrical sides of the annular flow passage; a plurality of the vent holes each extend from the inner circumferential wall to the annulus flow passage.
According to an embodiment of the invention, the cavity further comprises a bottom wall covering the bottom of the side wall, the two first channels extending from the annulus flow passage down to the bottom wall;
the exhaust runner further comprises an air outlet arranged in the middle of the bottom wall and two second channels arranged in the side wall and respectively extending from the two first channels to the air outlet.
According to one embodiment of the present invention, the plurality of exhaust holes are each divided into two groups of exhaust holes respectively adjacent to the two second passages; in each group of exhaust holes, the closer to the corresponding second channel, the larger the distance between two adjacent exhaust holes.
According to one embodiment of the invention, in each group of exhaust holes, the closer to the corresponding second channel, the smaller the aperture of the exhaust hole.
According to an embodiment of the invention, the cavity further comprises a top wall covering the top end of the side wall, the air inlet being arranged in the middle of the top wall.
According to one embodiment of the invention, the plurality of exhaust holes uniformly surround the loading platform; the cavity further comprises: a top wall covering a top end of the side wall, the air inlet being disposed in a middle portion of the top wall and facing the carrier platform; a bottom wall covering the bottom end of the side wall, wherein a gas outlet for discharging gas in the cavity is arranged below the middle part of the bottom wall; and the wall surface of the cavity is also provided with an exhaust channel for communicating the exhaust hole with the gas outlet, and the paths of the gas in the cavity from each exhaust hole to the gas outlet through the exhaust channel are equal.
According to an embodiment of the present invention, the exhaust gas flow passage includes a first flow passage provided in the side wall and a second flow passage provided in the bottom wall; the first flow passage extends from each exhaust vent to the second flow passage, which extends from the first flow passage to the air outlet.
According to an embodiment of the invention, the first flow channels are straight flow channels extending in an axial direction of the side wall, and the second flow channels are straight flow channels extending from each first flow channel from a radial direction to the air outlet.
According to one embodiment of the invention, the first flow passage is an annular chamber having one end communicating with each vent hole and the other end communicating with the second flow passage.
According to an embodiment of the present invention, the second flow channel is a disc-shaped chamber, an end portion of the first flow channel is connected to an edge of the second flow channel, and the air outlet is communicated with a middle portion of the second flow channel.
According to one embodiment of the invention, the cross section of the vent hole is an ellipse with the long axis horizontally arranged.
According to one embodiment of the invention, the area of said cross-section is between 0.5 pi and 2 pi cm2。
According to one embodiment of the invention, the side wall is cylindrical and the carrier platform is a circular plate, the side wall being arranged coaxially with the carrier platform.
According to one embodiment of the present invention, the exhaust hole is flush with the carrying surface of the object stage.
The invention also provides a thin film preparation device which comprises the reaction chamber.
According to the technical scheme, the reaction chamber has the advantages and positive effects that:
the reaction gas above the carrying platform can uniformly flow to the periphery from the middle, when the wafer is loaded on the carrying platform, the reaction gas can uniformly flow to the periphery from the middle of the wafer, part of the reaction gas is deposited on the surface of the wafer when the reaction gas flows on the surface of the wafer, the speed of depositing a film on the wafer is the same, and the thickness of the film generated on the wafer is more uniform.
Drawings
Various objects, features and advantages of the present invention will become more apparent from the following detailed description of preferred embodiments of the invention, when considered in conjunction with the accompanying drawings. The drawings are merely exemplary of the invention and are not necessarily drawn to scale. In the drawings, like reference characters designate the same or similar parts throughout the different views. Wherein:
FIG. 1 is a schematic view showing a structure of a reaction chamber of a carbon thin film formation apparatus;
FIG. 2 is a schematic view showing the structure of an air extracting ring of a carbon thin film producing apparatus;
FIG. 3 is a schematic diagram of a reaction chamber in a first embodiment of the invention;
FIG. 4 is a schematic perspective view of an exhaust channel looking down from an oblique upper side in a first embodiment of the present invention;
FIG. 5 is a perspective view of the exhaust runner looking up from below in a tilted direction according to a first embodiment of the present invention;
FIG. 6 is a schematic perspective view of a pumping ring according to a first embodiment of the present invention;
FIG. 7 is a schematic view of a reaction chamber in a second embodiment of the present invention;
FIG. 8 is a perspective view of the exhaust duct of the second embodiment of the present invention viewed from obliquely above;
FIG. 9 is a perspective view of the exhaust duct looking up from below in a tilted direction according to the second embodiment of the present invention;
FIG. 10 is a schematic perspective view of a pumping ring in an embodiment of the invention;
FIG. 11 is a perspective view of an exhaust duct of a third embodiment of the present invention viewed from obliquely above;
fig. 12 is a perspective view of the exhaust duct viewed from below in a tilted manner according to the third embodiment of the present invention.
Wherein the reference numerals are as follows:
1a, a reaction chamber; 11a, a cylinder body; 111a, an annular flow channel; 112a, an annular groove; 113a, an air extraction ring; 114a, an exhaust hole; 115a and an air outlet; 12a, a bottom wall; 13a, a top wall; 131a, an air inlet; 14a, an object stage; 2. a wafer;
1b, a reaction chamber; 10b, a cavity; 11b, side walls; 110b, a cylinder; 112b, an annular groove; 113b, an air extraction ring; 114b, an exhaust hole; 115b, an air outlet; 116b, an exhaust runner; 117b, a first channel; 118b, a second channel; 119b, an annular flow channel; 12b, a bottom wall; 13b, a top wall; 131b, an air inlet; 14b, a carrying platform; 15b, a spray head;
1. a reaction chamber; 10. a cavity; 11. a side wall; 110. a barrel; 112. an annular groove; 113. an air pumping ring; 114. an exhaust hole; 115. an air outlet; 116. an exhaust flow passage; 117. a first flow passage; 118. a second flow passage; 117c, a first flow channel; 118c, a second flow channel; 12. a bottom wall; 13. a top wall; 131. an air inlet; 14. a carrier platform; 15. and (4) a spray head.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed description will be omitted.
Example one
As shown in fig. 3, fig. 3 shows a reaction chamber 1b of a semiconductor processing apparatus. The reaction chamber 1b includes a chamber body 10b and a stage 14 b. The stage 14b is disposed within the cavity 10 b. The top of the carrier platform 14b is provided with a horizontal bearing surface. The carrying surface is used for carrying a wafer 2 to be processed.
The cavity 10b includes a bottom wall 12b, a side wall 11b, and a top wall 13 b. The side wall 11b is provided in a cylindrical structure. The side wall 11b is vertically disposed. The top wall 13b and the bottom wall 12b are respectively arranged at the top end and the bottom end of the side wall 11b, and the bottom wall 12b, the side wall 11b and the top wall 13b enclose a cavity structure.
The side wall 11b has an internal cavity therein, which is preferably a cylindrical cavity. A carrier platform 14b is disposed within the interior cavity. A support column is provided below the carrier platform 14b to support the carrier platform 14 b. The side wall 11b is preferably of cylindrical configuration, the carrier platform 14b is preferably of circular plate shape, and the carrier platform 14b is arranged coaxially with the side wall 11 b. The side wall 11b is provided with a plurality of exhaust holes 114 b. The discharge holes 114b are formed by radially recessing the inner circumferential wall of the side wall 11 b. A plurality of vent holes 114b are arranged in sequence around the carrier platform.
The top wall 13b may be provided as a plate-like structure, preferably a circular plate. The top wall 13b covers the top end of the side wall 11b, and covers the top end of the side wall 11 b. The central portion of the top wall 13b is provided with an air inlet 131 b. The outward end of the gas inlet 131b is connected to a reaction gas source through a pipe. The reaction gas source may be a tank containing the reaction gas or a generator for producing the reaction gas. The gas inlet 131b is used to input a reaction gas into the chamber 10 b. The gas inlet 131b is provided downward so that the reaction gas is ejected downward. The stage 14b is disposed below the air inlet 131 b. The air inlet 131b is aligned with the middle of the carrier platform 14 b.
The bottom wall 12b is provided at the bottom end of the side wall 11b, and covers the bottom end of the side wall 11 b. The bottom wall 12b may be provided as a flat plate structure, preferably a circular plate. An air outlet 115b is provided below the middle of the bottom wall 12 b. The gas outlet 115b is used to discharge the gas inside the chamber 10 b. The air outlet 115b is used for connecting an air extracting device, for example, the air outlet 115b is communicated with a vacuum pump through a pipeline. The air-extracting device extracts air to generate a negative pressure at the air outlet 115b after being activated.
Referring to fig. 4 and 5, an exhaust flow passage 116b communicating the exhaust hole 114b and the air outlet 115b is further provided in the wall surface of the cavity 10 b. The exhaust flow passage 116b includes an annulus flow passage 119b, two first passages 117b and two second passages 118 b. The annulus flow passage 119b is arranged in an annular, preferably circular, shape. The annulus flow passage 119b and the first passage 117b are both disposed in the side wall 11b, and the second passage 118b is disposed in the bottom wall 12 b. Each vent hole 114b extends from the inner peripheral wall of the side wall 11b to the annulus flow passage 119 b. Both first passages 117b communicate with the annulus flow passage 119 b. The two first flow passages 117b are disposed on opposite sides of the sidewall 11b, respectively, and communicate with opposite sides of the annulus flow passage 119b, respectively. The two second passages 118b extend from the two first passages 117b to the air outlet 115b, respectively.
When the gas extraction device is started, the gas in the cavity 10b passes through the gas exhaust hole 114b, the annular flow passage 119b, the first passage 117b and the second passage 118b in sequence, and is finally exhausted from the gas outlet 115 b.
The gas inlet 131b inputs the reaction gas into the chamber 10b, the reaction gas is injected to the wafer 2b of the stage after being input into the chamber 10b from the gas inlet 131b, a part of the reaction gas is deposited on the surface of the wafer 2b when flowing on the surface of the wafer 2b, and the other part of the reaction gas passes through the plurality of exhaust holes 114b, reaches the gas outlet 115b through the exhaust flow channel, and is output from the gas outlet 115 b.
Since the two first passages 117b are symmetrically disposed on the annular flow passage 119b, the two first passages 117b extract air in the annular flow passage 119b from the symmetrical portion of the annular flow passage 119b with the same suction force, so that the air extraction speed of each exhaust hole 114b is relatively more uniform, and further, the reaction gas above the stage 14b can flow uniformly from the middle to the periphery. When the wafer 2 is loaded on the stage 14b, the reaction gas can flow uniformly from the middle to the periphery of the wafer 2, the speed of depositing the thin film on the wafer 2 is the same, and the thickness of the thin film formed on the wafer 2 is more uniform.
Further, referring to fig. 6, the plurality of exhaust holes 114b are each divided into two groups of exhaust holes respectively adjacent to the two second passages 118 b. Each set of exhaust holes corresponds to its closest second passage 118 b. In each group of exhaust holes, the closer to the corresponding second channel 118b, the larger the spacing between two adjacent exhaust holes 114 b.
In each set of exhaust holes, the closer to the exhaust hole 114b of its corresponding second channel 118b, the smaller the air pressure in the exhaust hole 114b, the faster the exhaust hole 114b exhausts. After the exhaust holes 114b are arranged in the above manner, the plurality of exhaust holes 114b can be more uniformly exhausted in the circumferential direction of the stage 14b, so that the reaction gas above the stage 14b can flow more uniformly from the middle to the periphery, and the thickness of the film generated on the wafer 2 is more uniform.
Further, in each set of exhaust holes, the aperture of the exhaust hole 114b is smaller as it is closer to the corresponding second passage 118 b.
In each set of exhaust holes, the closer the exhaust hole 114b is to the corresponding second passage 118b, the smaller the air pressure in the exhaust hole 114b, and the closer the exhaust hole 114b is to the second passage 118b, the smaller the aperture is, the closer the speed of air suction from each exhaust hole 114b is. Therefore, after the exhaust holes 114b are arranged in the above manner, the plurality of exhaust holes 114b can be more uniformly exhausted in the circumferential direction of the stage 14b, so that the reaction gas above the stage 14b can flow more uniformly from the middle to the periphery, and the thickness of the thin film generated on the wafer 2 is more uniform.
Further, as shown in fig. 4 and 5, the first channel 117b and the second channel 118b are straight channels. Each first passage 117b extends from the annulus flow passage 119b to its corresponding second passage 118b in the axial direction of the side wall 11 b. Each second passage 118b extends from an end of the first passage 117b opposite thereto to the air outlet 115 b.
Further, the side wall 11b is cylindrical, the stage is a circular plate, and the side wall 11b is disposed coaxially with the stage. After the stage and the sidewall 11b are coaxially disposed, the distance between the stage and the sidewall 11b is the same, and the airflow is more uniformly distributed in all directions when flowing from the stage to the exhaust holes 114b of the sidewall 11b, so that the thickness of the film grown on the surface of the wafer 2 is more uniform.
Further, the vent hole 114b is flush with the carrying surface of the object stage 14 b. The exhaust holes 114b are flush with the carrying surface of the stage 14b, the reaction gas injected from the gas inlet to the carrying surface is reversed on the carrying surface and then horizontally enters the exhaust holes 114b, the reaction gas is not reversed from the carrying surface to the exhaust holes 114b and is laminar, and turbulence is not generated, so that the thickness of the thin film grown on the surface of the wafer 2 is more uniform.
Further, the sidewall 11b includes a cylinder 110b and a pumping ring 113 b. The cylinder 110b is preferably a cylinder. The cylinder 110b is coaxially disposed with the pumping ring 113b, and the pumping ring 113b is embedded in the inner wall of the cylinder 110 b. The first passage 117b and the annulus flow passage 119b are both disposed within the wall of the cylinder 110 b. As shown in FIG. 6, the pumping ring 113b is provided with a plurality of radially extending exhaust holes 114 b. The exhaust holes 114b radially penetrate the exhaust ring 113 b. The vent holes 114b communicate with the annulus flow passage 119 b. The pumping ring 113b is preferably circular.
Further, the chamber 10b further includes a spray head 15b disposed at the top. The nozzle 15b communicates with the gas inlet 131 b. The shower head 15b is used to uniformly spray the reaction gas inputted from the gas inlet 131b onto the stage 14 b.
Further, the film preparation apparatus is used for preparing a carbon film. The film preparation equipment adopts a chemical vapor deposition method to deposit a film. During deposition, the pressure in the chamber 10b is 1-50 torr. The platform 14b can be heated, for example, by providing heating wires within the platform 14 b.
Further, the distance between the exhaust hole 114b and the air outlet 115b is 50-200 mm. The exhaust port is circular, and the diameter of the exhaust port is preferably 50-200 mm.
Further, the reaction chamber 1b is provided with a plurality of cavities 10b and a plurality of stages 14 b. The number of cavities 10b and carrier platforms 14b is the same, for example two each. The object carrying platforms 14b are arranged corresponding to the cavities 10b one by one, and the object carrying platforms 14b are arranged in the cavities 10b corresponding to the object carrying platforms.
Example two
As shown in fig. 7, fig. 7 shows a reaction chamber 1 of a semiconductor processing apparatus. The reaction chamber 1 includes a chamber body 10 and a stage 14. A carrier platform 14 is disposed within the chamber 10. The top of the carrier platform 14 is provided with a horizontal bearing surface. The carrying surface is used for carrying a wafer 2 to be processed.
The chamber 10 comprises a bottom wall 12, side walls 11 and a top wall 13. The side wall 11 is arranged in a cylindrical configuration. The side walls 11 are arranged vertically. The top wall 13 and the bottom wall 12 are respectively arranged at the top end and the bottom end of the side wall 11, and the bottom wall 12, the side wall 11 and the top wall 13 enclose a cavity structure.
The side wall 11 has an internal cavity therein, which is preferably a cylindrical cavity. A carrier platform 14 is disposed within the interior cavity. A support column is provided below the carrier platform 14 to support the carrier platform 14. The side wall 11 is preferably of cylindrical configuration and the carrier platform 14 is preferably of circular plate shape, the carrier platform 14 being arranged coaxially with the side wall 11. The side wall 11 is provided with a plurality of exhaust holes 114. The exhaust holes 114 are formed by radially recessing the inner circumferential wall of the side wall 11. A plurality of vent holes 114 are arranged in sequence around the carrier platform. The distance between two adjacent vent holes 114 is the same.
The top wall 13 may be provided as a plate-like structure, preferably a circular plate. The top wall 13 covers the top ends of the side walls 11, covering the top ends of the side walls 11. The central portion of the top wall 13 is provided with an air inlet 131. The outward end of the gas inlet 131 is connected to a reaction gas source through a pipe. The reaction gas source may be a tank containing the reaction gas or a generator for producing the reaction gas. The gas inlet 131 is used to input a reaction gas into the chamber 10. The gas inlet 131 is provided downward so that the reaction gas is ejected downward. The loading platform 14 is disposed below the air inlet 131. Air inlet 131 is aligned with the middle of carrier platform 14.
The bottom wall 12 is provided at the bottom end of the side wall 11, and covers the bottom end of the side wall 11. The bottom wall 12 may be provided as a flat plate structure, preferably a circular plate. An air outlet 115 is provided below the middle of the bottom wall 12. The gas outlet 115 is used to discharge the gas inside the chamber 10. The air outlet 115 is used for connecting an air extracting device, for example, the air outlet 115 is communicated with a vacuum pump through a pipeline. The air extractor is activated to extract air to create a negative pressure at the air outlet 115.
An exhaust channel 116 communicating the exhaust hole 114 and the air outlet 115 is further provided in the wall surface of the chamber 10. The exhaust runner 116 includes a first runner 117 and a second runner 118. The first flow passage 117 is provided in the side wall 11 and the second flow passage 118 is provided in the bottom wall. A first flow passage 117 extends from each exhaust vent 114 to a second flow passage 118. The second flow passage 118 extends from one end of the first flow passage 117 to the air outlet 115. The gas passes through the gas outlet port 115 via the gas discharge hole 114, the first flow passage 117, and the second flow passage 118 in this order. The gas in the chamber 10 reaches the gas outlet from each of the gas outlet holes 114 equally through the gas outlet flow passage 116. The equal path here means that the gas movement trajectories have the same shape and the same length.
The wafer 2 is placed in the middle of the stage. The gas inlet 131 inputs reaction gas into the chamber 10, the reaction gas is input into the chamber 10 from the gas inlet 131 and then sprayed onto the wafer 2 of the stage, a part of the reaction gas is deposited on the surface of the wafer 2 when the reaction gas flows over the surface of the wafer 2, and the other part of the reaction gas passes through the plurality of exhaust holes 114, reaches the gas outlet 115 through the exhaust flow channel, and is output from the gas outlet 115. Since the paths of the gas from each exhaust hole 114 to the gas outlet 115 are equal, the speed of the gas entering each exhaust hole 114 is the same, so that the flow velocity of the reaction gas flowing through the center of the wafer 2 and diffusing to the periphery is equal, and the film grown on the surface of the wafer 2 is more uniform.
Further, as shown in fig. 8 and 9, the first flow passage 117 and the second flow passage 118 are both straight flow passages. The first flow passage 117 and the second flow passage 118 are each provided in plural. The number of the first flow channels 117 and the number of the second flow channels 118 are equal to the number of the exhaust holes 114, the first flow channels 117 are arranged in one-to-one correspondence with the exhaust holes 114, and the second flow channels 118 are arranged in one-to-one correspondence with the first flow channels 117. Each first flow passage 117 extends from its corresponding exhaust hole 114 to its corresponding second flow passage 118 in the axial direction of the side wall 11. Each second flow passage 118 extends from an end of the first flow passage 117 opposite thereto to the air outlet 115. Thus, each of the exhaust runners 116 is composed of a first runner 117 and a second runner 118 corresponding to the first runner 117, and each of the exhaust runners 116 has the same shape and length, so that the resistance to the gas passing through each of the exhaust runners 116 is the same, and thus the speed at which each of the exhaust holes 114 sucks the gas is the same.
Further, the cross-section of the exhaust hole 114 is elliptical. The major axis of the cross section is arranged horizontally and the minor axis is arranged vertically. After the arrangement, the exhaust holes 114 are narrower and narrower in the horizontal direction and flatter in the vertical direction, and the exhaust holes 114 can enable the gas flow to be uniformly sucked in the circumferential direction when the gas is sucked, so that the gas flow of the reaction gas diffused around the wafer 2 is more uniformly distributed, and the thickness of the film growing on the surface of the wafer 2 is more uniform. The area of the cross section of the exhaust hole 114 is preferably 0.5 pi-2 pi cm2. Thus, the size of the vent holes 114 is moderate, which can achieve better results.
Further, the sidewall 11 is cylindrical, the stage is a circular plate, and the sidewall 11 and the stage are coaxially disposed. After the loading platform and the sidewall 11 are coaxially arranged, the distance between the loading platform and the sidewall 11 is the same, and the airflow is more uniformly distributed in all directions when flowing from the loading platform to the exhaust holes 114 of the sidewall 11, so that the thickness of the film grown on the surface of the wafer 2 is more uniform.
Further, the vent holes 114 are flush with the bearing surface of the carrier platform 14. The exhaust holes 114 are flush with the carrying surface of the stage 14, the reaction gas injected from the gas inlet to the carrying surface is reversed on the carrying surface and then horizontally enters the exhaust holes 114, the reaction gas is not reversed from the carrying surface to the exhaust holes 114, and is laminar flow, so that the thickness of the thin film grown on the surface of the wafer 2 is more uniform without generating turbulence.
Further, the sidewall 11 includes a barrel 110 and an exhaust ring 113. The barrel 110 is preferably a cylinder. The cylinder 110 is coaxially arranged with the pumping ring 113, and the pumping ring 113 is embedded on the inner wall of the cylinder 110. The first flow channel 117 is provided in the wall surface of the cylinder 110. As shown in FIG. 10, the pumping ring 113 is provided with a plurality of radially extending exhaust holes 114. The exhaust holes 114 extend radially through the exhaust ring 113. The discharge hole 114 communicates with the first flow passage 117. The pumping ring 113 is preferably circular.
Further, the chamber 10 further includes a spray head 15 disposed at the top. The nozzle 15 is connected to the gas inlet 131. The showerhead 15 is used to uniformly spray the reaction gas inputted from the gas inlet 131 onto the stage 14.
Further, the film preparation apparatus is used for preparing a carbon film. The film preparation equipment adopts a chemical vapor deposition method to deposit a film. During deposition, the pressure in the chamber 10 is 1-50 torr. The carrier platform 14 can be heated, for example, by providing heating wires within the carrier platform 14.
Further, the distance between the exhaust hole 114 and the air outlet 115 is 50-200 mm. The exhaust port is circular, and the diameter of the exhaust port is preferably 50-200 mm.
Further, the reaction chamber 1 is provided with a plurality of cavities 10 and a plurality of stages 14. The number of cavities 10 and carrier platforms 14 is the same, for example two each. The object carrying platforms 14 are arranged corresponding to the cavities 10 one by one, and the object carrying platforms 14 are arranged in the cavities 10 corresponding to the object carrying platforms.
EXAMPLE III
The reaction chamber in the third embodiment is different from the reaction chamber in the second embodiment only in the design of the exhaust flow channel.
As shown in fig. 11 and 12, the first flow passage 117c is configured as an annular chamber disposed within the sidewall 11 and coaxially disposed with the sidewall 11. One end of the annular cavity communicates with each exhaust hole 114 and the other end communicates with the second flow passage 118 c. The second flow passage 118c is configured as a disc-shaped chamber, and the second flow passage 118c is disposed in the bottom wall 12 and is disposed coaxially with the bottom wall 12. The end of the first flow passage 117c is connected to the edge of the second flow passage 118c, and the air outlet 115 communicates with the middle of the second flow passage 118 c. Thus, the path of the gas in the chamber 10 from each of the exhaust holes 114 to the gas outlet 115 through the exhaust flow passage 116 is equal, and thus, the gas is sucked at the same speed through each of the exhaust holes 114.
It is to be understood that the various examples described above may be utilized in various orientations (e.g., inclined, inverted, horizontal, vertical, etc.) and in various configurations without departing from the principles of the present invention. The embodiments illustrated in the drawings are shown and described merely as examples of useful applications of the principles of the invention, which is not limited to any specific details of these embodiments.
Of course, once the above description of representative embodiments is considered in great detail, those skilled in the art will readily appreciate that many modifications, additions, substitutions, deletions, and other changes may be made to these specific embodiments, and such changes are within the scope of the principles of the present invention. Therefore, the foregoing detailed description is to be clearly understood as being given by way of illustration and example only, the spirit and scope of the present invention being limited solely by the appended claims and their equivalents.
Claims (16)
1. The reaction chamber of the film preparation equipment is characterized by comprising a cavity and an object carrying platform arranged in the cavity;
the cavity includes:
the gas inlet is arranged above the carrying platform and used for inputting reaction gas;
the cylindrical side wall is provided with a plurality of exhaust holes which are positioned at the same horizontal height, are formed by the concave inner peripheral wall of the side wall and are distributed around the loading platform; and
the exhaust runner is communicated with each exhaust hole;
when the exhaust channel is used for exhausting air, the air above the loading platform flows uniformly from the middle to the periphery.
2. The reaction chamber of claim 1, wherein the exhaust flow passage comprises an annulus flow passage disposed in the sidewall and two first passages respectively communicating two symmetrical sides of the annulus flow passage;
a plurality of the vent holes each extend from the inner circumferential wall to the annulus flow passage.
3. The reaction chamber of claim 2 wherein the cavity further comprises a bottom wall overlying the bottom of the side wall, the two first passages extending downwardly from the annulus flow passage to the bottom wall;
the exhaust runner further comprises an air outlet arranged in the middle of the bottom wall and two second channels arranged in the side wall and respectively extending from the two first channels to the air outlet.
4. The reaction chamber of claim 2 wherein the plurality of exhaust ports are each divided into two groups of exhaust ports respectively adjacent to two of the second channels, each group of exhaust ports corresponding to its nearest second channel;
in each group of exhaust holes, the closer to the corresponding second channel, the larger the distance between two adjacent exhaust holes.
5. A reaction chamber as claimed in claim 4 wherein each set of vents has a smaller aperture closer to its corresponding second channel.
6. The reaction chamber of claim 1, wherein the chamber body further comprises a top wall covering a top end of the side wall, and the gas inlet is disposed at a middle portion of the top wall.
7. The reaction chamber of claim 1, wherein the plurality of exhaust holes uniformly surround the stage;
the cavity further comprises:
a top wall covering a top end of the side wall, the air inlet being disposed in a middle portion of the top wall and facing the carrier platform;
a bottom wall covering the bottom end of the side wall, wherein a gas outlet for discharging gas in the cavity is arranged below the middle part of the bottom wall;
and the wall surface of the cavity is also provided with an exhaust channel for communicating the exhaust hole with the gas outlet, and the paths of the gas in the cavity from each exhaust hole to the gas outlet through the exhaust channel are equal.
8. The reaction chamber of claim 1, wherein the exhaust flow channel comprises a first flow channel disposed in the sidewall and a second flow channel disposed in the bottom wall;
the first flow passage extends from each exhaust vent to the second flow passage, which extends from the first flow passage to the air outlet.
9. The reaction chamber of claim 8 wherein the first flow passages are straight flow passages extending axially along the sidewall and the second flow passages are straight flow passages extending radially from each first flow passage to the gas outlet.
10. The reaction chamber of claim 8, wherein the first flow passage is an annular chamber having one end in communication with each vent hole and the other end in communication with the second flow passage.
11. The reaction chamber as claimed in claim 10, wherein the second flow channel is a disc-shaped chamber, the end of the first flow channel is connected to the edge of the second flow channel, and the gas outlet is connected to the middle of the second flow channel.
12. A reaction chamber as claimed in any one of claims 7 to 11 wherein the vent has an elliptical cross-section with the major axis disposed horizontally.
13. According to claim12, wherein the area of the cross section is 0.5 pi-2 pi cm2。
14. The reaction chamber of any of claims 1 to 11, wherein the sidewall is cylindrical and the stage is a circular plate, the sidewall being disposed coaxially with the stage.
15. The reaction chamber of claim 14, wherein the vent hole is flush with a bearing surface of the stage.
16. A thin film preparation apparatus comprising a reaction chamber according to any one of claims 1 to 15.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811076455.6A CN110904437B (en) | 2018-09-14 | 2018-09-14 | Film preparation equipment and reaction chamber thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811076455.6A CN110904437B (en) | 2018-09-14 | 2018-09-14 | Film preparation equipment and reaction chamber thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110904437A true CN110904437A (en) | 2020-03-24 |
| CN110904437B CN110904437B (en) | 2024-05-03 |
Family
ID=69812991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811076455.6A Active CN110904437B (en) | 2018-09-14 | 2018-09-14 | Film preparation equipment and reaction chamber thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110904437B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113174587A (en) * | 2021-04-09 | 2021-07-27 | 深圳市华星光电半导体显示技术有限公司 | Membrane treatment apparatus |
| CN114300336A (en) * | 2021-12-28 | 2022-04-08 | 拓荆科技股份有限公司 | Plasma reactor |
| CN114717538A (en) * | 2021-04-21 | 2022-07-08 | 拓荆科技股份有限公司 | Thin film deposition device and deposition method thereof |
| CN115064471A (en) * | 2022-08-01 | 2022-09-16 | 北京屹唐半导体科技股份有限公司 | Heat treatment device for wafer |
| CN115074704A (en) * | 2022-07-27 | 2022-09-20 | 拓荆科技(上海)有限公司 | Spraying device |
Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101189708A (en) * | 2005-05-31 | 2008-05-28 | 东京毅力科创株式会社 | Plasma treatment apparatus and plasma treatment method |
| KR20080111334A (en) * | 2007-06-18 | 2008-12-23 | 권태균 | Chemical vapor deposition apparatus |
| WO2009017322A1 (en) * | 2007-07-30 | 2009-02-05 | Ips Ltd. | Reactor for depositing thin film on wafer |
| TWM446412U (en) * | 2012-08-06 | 2013-02-01 | Boogang Semiconductor Co Ltd | Exhaust ring easy for clean |
| CN202786415U (en) * | 2012-08-23 | 2013-03-13 | 富强半导体有限公司 | Exhaust ring |
| KR20130074413A (en) * | 2011-12-26 | 2013-07-04 | 주식회사 원익아이피에스 | Substrate processing apparatus |
| CN104103482A (en) * | 2013-04-07 | 2014-10-15 | 盛美半导体设备（上海）有限公司 | Wafer processing cavity |
| CN104264217A (en) * | 2014-10-20 | 2015-01-07 | 佛山市中山大学研究院 | MOCVD (metal organic chemical vapor deposition) reaction device for preparing semiconductor epitaxial wafers |
| KR101503254B1 (en) * | 2014-10-10 | 2015-03-18 | (주) 일하하이텍 | Apparatus and method of processing substrate |
| TW201521087A (en) * | 2013-11-29 | 2015-06-01 | Taiwan Semiconductor Mfg Co Ltd | Wafer process apparatus and method for processing semiconductor wafer |
| WO2015154493A1 (en) * | 2014-04-11 | 2015-10-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Semiconductor processing device |
| CN106282969A (en) * | 2015-06-02 | 2017-01-04 | 中微半导体设备(上海)有限公司 | Chemical vapor deposition unit and deposition process thereof |
| CN207845776U (en) * | 2018-02-09 | 2018-09-11 | 安徽三安光电有限公司 | A kind of MOCVD device |
| CN209065998U (en) * | 2018-09-14 | 2019-07-05 | 长鑫存储技术有限公司 | Equipment for producing thin film and its reaction chamber |
| CN110942982A (en) * | 2018-09-21 | 2020-03-31 | 长鑫存储技术有限公司 | Semiconductor processing device |
-
2018
- 2018-09-14 CN CN201811076455.6A patent/CN110904437B/en active Active
Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101189708A (en) * | 2005-05-31 | 2008-05-28 | 东京毅力科创株式会社 | Plasma treatment apparatus and plasma treatment method |
| KR20080111334A (en) * | 2007-06-18 | 2008-12-23 | 권태균 | Chemical vapor deposition apparatus |
| WO2009017322A1 (en) * | 2007-07-30 | 2009-02-05 | Ips Ltd. | Reactor for depositing thin film on wafer |
| KR20130074413A (en) * | 2011-12-26 | 2013-07-04 | 주식회사 원익아이피에스 | Substrate processing apparatus |
| TWM446412U (en) * | 2012-08-06 | 2013-02-01 | Boogang Semiconductor Co Ltd | Exhaust ring easy for clean |
| CN202786415U (en) * | 2012-08-23 | 2013-03-13 | 富强半导体有限公司 | Exhaust ring |
| CN104103482A (en) * | 2013-04-07 | 2014-10-15 | 盛美半导体设备（上海）有限公司 | Wafer processing cavity |
| TW201521087A (en) * | 2013-11-29 | 2015-06-01 | Taiwan Semiconductor Mfg Co Ltd | Wafer process apparatus and method for processing semiconductor wafer |
| WO2015154493A1 (en) * | 2014-04-11 | 2015-10-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Semiconductor processing device |
| KR101503254B1 (en) * | 2014-10-10 | 2015-03-18 | (주) 일하하이텍 | Apparatus and method of processing substrate |
| CN104264217A (en) * | 2014-10-20 | 2015-01-07 | 佛山市中山大学研究院 | MOCVD (metal organic chemical vapor deposition) reaction device for preparing semiconductor epitaxial wafers |
| CN106282969A (en) * | 2015-06-02 | 2017-01-04 | 中微半导体设备(上海)有限公司 | Chemical vapor deposition unit and deposition process thereof |
| CN207845776U (en) * | 2018-02-09 | 2018-09-11 | 安徽三安光电有限公司 | A kind of MOCVD device |
| CN209065998U (en) * | 2018-09-14 | 2019-07-05 | 长鑫存储技术有限公司 | Equipment for producing thin film and its reaction chamber |
| CN110942982A (en) * | 2018-09-21 | 2020-03-31 | 长鑫存储技术有限公司 | Semiconductor processing device |
Non-Patent Citations (4)
| Title |
|---|
| 宋颖韬, 徐曾和, 姜元勇: "一维多孔介质中气体渗流与多相气固反应分析", 水动力学研究与进展A辑, no. 06 * |
| 宋颖韬, 徐曾和, 姜元勇: "一维多孔介质中气体渗流与多相气固反应分析", 水动力学研究与进展A辑, no. 06, 30 December 2004 (2004-12-30) * |
| 程舒娴;高铁瑜;李军;: "圆孔型预旋喷嘴转静盘腔内流动换热特性数值研究", 热能动力工程, no. 04 * |
| 程舒娴;高铁瑜;李军;: "圆孔型预旋喷嘴转静盘腔内流动换热特性数值研究", 热能动力工程, no. 04, 20 April 2016 (2016-04-20) * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113174587A (en) * | 2021-04-09 | 2021-07-27 | 深圳市华星光电半导体显示技术有限公司 | Membrane treatment apparatus |
| CN114717538A (en) * | 2021-04-21 | 2022-07-08 | 拓荆科技股份有限公司 | Thin film deposition device and deposition method thereof |
| CN114717538B (en) * | 2021-04-21 | 2023-10-31 | 拓荆科技股份有限公司 | Film deposition device and deposition method thereof |
| CN114300336A (en) * | 2021-12-28 | 2022-04-08 | 拓荆科技股份有限公司 | Plasma reactor |
| CN114300336B (en) * | 2021-12-28 | 2024-02-23 | 拓荆科技股份有限公司 | Plasma reactor |
| CN115074704A (en) * | 2022-07-27 | 2022-09-20 | 拓荆科技(上海)有限公司 | Spraying device |
| CN115064471A (en) * | 2022-08-01 | 2022-09-16 | 北京屹唐半导体科技股份有限公司 | Heat treatment device for wafer |
| CN115064471B (en) * | 2022-08-01 | 2023-11-28 | 北京屹唐半导体科技股份有限公司 | Wafer heat treatment device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110904437B (en) | 2024-05-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110904437A (en) | Film preparation equipment and reaction chamber thereof | |
| CN104641457B (en) | Gas distributes sub-assembly | |
| CN101990789B (en) | Lower liner with integrated flow equalizer and improved conductance | |
| US6537418B1 (en) | Spatially uniform gas supply and pump configuration for large wafer diameters | |
| US9741575B2 (en) | CVD apparatus with gas delivery ring | |
| CN106098527A (en) | For forming the dual pathways shower nozzle of membrane stack | |
| US20190145002A1 (en) | Showerhead and substrate processing device including the same | |
| WO2009089794A1 (en) | Plasma processing equipment and gas distribution apparatus thereof | |
| CN101197249A (en) | Reaction cavity lining and reaction cavity including the same | |
| US5529626A (en) | Spincup with a wafer backside deposition reduction apparatus | |
| CN113169101B (en) | Pumping apparatus and method for substrate processing chamber | |
| KR20060059305A (en) | Semiconductor processing equipment | |
| CN215887221U (en) | Semiconductor process chamber | |
| US20220307135A1 (en) | Hardware to prevent bottom purge incursion in application volume and process gas diffusion below heater | |
| JP2020061549A (en) | Substrate processing apparatus | |
| CN216864317U (en) | Deposition apparatus | |
| CN110942982A (en) | Semiconductor processing device | |
| CN209065998U (en) | Equipment for producing thin film and its reaction chamber | |
| CN112368797A (en) | Plasma diffusion apparatus and system and method of diffusing plasma in a processing furnace | |
| JP2023046391A (en) | System and apparatus for gas distribution | |
| US20180258531A1 (en) | Diffuser design for flowable cvd | |
| CN103215565A (en) | Cvd conformal vacuum/pumping guiding design | |
| TW513489B (en) | Gas distribution plate for plasma treatment gas and its manufacture method | |
| KR20220030541A (en) | Apparatus for processing substrate | |
| TWM519316U (en) | Guide element for thin-film deposition and thin-film deposition apparatus comprising the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |