CN110880559A - Alternating current driven carbon quantum dot light emitting device - Google Patents
Alternating current driven carbon quantum dot light emitting device Download PDFInfo
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- CN110880559A CN110880559A CN201911201304.3A CN201911201304A CN110880559A CN 110880559 A CN110880559 A CN 110880559A CN 201911201304 A CN201911201304 A CN 201911201304A CN 110880559 A CN110880559 A CN 110880559A
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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Abstract
The invention relates to the technical field of photoelectric light emitting and display devices, in particular to an alternating current driven carbon quantum dot light emitting device which comprises a substrate, an anode layer, a dielectric layer, a hole transmission layer, a quantum dot light emitting layer, an electron transmission layer and a cathode layer, wherein the quantum dot light emitting layer is made of carbon quantum dots, and alternating current is applied to two ends of the cathode layer and two ends of the anode layer so as to drive the carbon quantum dot light emitting device in an alternating current mode. The carbon quantum dot light-emitting device is simple to prepare and suitable for mass production, and reduces electric energy loss and equipment complexity.
Description
Technical Field
The invention relates to the technical field of photoelectric light emitting and display devices, in particular to an alternating current driven carbon quantum dot light emitting device.
Background
The quantum dots are concerned by many researchers due to the characteristics of approximate unit photoluminescence quantum yield, narrow half-width peak and full-spectrum adjustability of the quantum dots, and in addition, due to the advantages of high color purity, compatibility with printing process preparation and the like of the quantum dots, the batch manufacturing of large-area QLED devices becomes possible, which is one of the important directions in the future display field. The carbon quantum dots do not contain nontoxic heavy metals, so that the carbon quantum dots have no negative influence on the environment and people and are greatly concerned.
In real life, the devices used by people basically work under the condition of direct current, which causes the inevitable loss of electricity in the transmission process and increases the complexity of the devices, because the power supply used in daily life is alternating current of 220V and 50 Hz. Therefore, there is a need to provide a carbon quantum dot light emitting device that can directly operate under an ac environment to reduce power consumption and complexity of the device.
Disclosure of Invention
The invention aims to provide an alternating current driven carbon quantum dot light-emitting device which is simple to prepare and suitable for mass production, and reduces electric energy loss and equipment complexity.
In order to achieve the purpose, the invention adopts the technical scheme that: the alternating current driven carbon quantum dot light-emitting device comprises a substrate, an anode layer, a dielectric layer, a hole transmission layer, a quantum dot light-emitting layer, an electron transmission layer and a cathode layer, wherein the quantum dot light-emitting layer is made of carbon quantum dots, and alternating current is applied to two ends of the cathode layer and two ends of the anode layer so as to drive the carbon quantum dot light-emitting device in an alternating current mode.
Further, the lower surface of the hole transport layer may be laminated with the dielectric layer, or the lower surface of the hole transport layer and the upper surface of the electron transport layer may be respectively laminated with the dielectric layer.
Further, the material of the dielectric layer includes a polymer or a metal oxide.
Further, the polymer comprises polyvinylpyrrolidone or polymethylmethacrylate, and the metal oxide comprises silicon dioxide, aluminum oxide, hafnium oxide or zirconium oxide, and has a thickness of 10nm to 5 μm.
Further, the material of the hole injection layer comprises MoOxOr PEDOT.
Further, the hole transport layer is a single layer or a double layer, and the material of the single layer hole transport layer comprises PEDOT or MoOxThe double-layer hole transport layer is formed by depositing a layer of PVK, Poly-TPD, TFB or perovskite on the basis of a single-layer hole transport layer by a solution method, wherein the deposition method comprises one of a spin coating method, a dip coating method, a blade coating method, a casting method, a spraying method, a screen printing method or an ink-jet printing method.
Further, the material of the electron transport layer is metal oxide nanoparticles prepared by a solution method.
Compared with the prior art, the invention has the following beneficial effects: the dielectric layer, the hole transport layer, the quantum dot light-emitting layer and the electron transport layer can be prepared by a solution method, and the quantum dot light-emitting layer adopts carbon quantum dots, so that the preparation method has the advantages of simplicity in preparation, high compatibility and easiness in large-area film formation, is suitable for large-scale production, and can control the brightness of a carbon quantum dot light-emitting device by adjusting voltage and frequency. The alternating current driven carbon quantum dot light-emitting device can directly work in the environment of 220V and 50Hz, and can well solve the problems of electric energy transmission loss and equipment complexity.
Drawings
Fig. 1 is a schematic structural view of a carbon quantum dot light-emitting device having a single hole transport layer according to a first embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a carbon quantum dot light-emitting device having a double-layer hole transport layer according to a second embodiment of the present invention.
FIG. 3 is a schematic structural diagram of a carbon quantum dot light-emitting device having a bilayer dielectric layer and a bilayer hole transport layer according to a third embodiment of the present invention.
Detailed Description
The invention is described in further detail below with reference to the figures and the embodiments.
In order to make the content of the present invention easier to understand, the technical solution of the present invention is further described below with reference to the specific embodiments, but the present invention is not limited thereto.
As shown in fig. 1, 2, and 3, which are schematic cross-sectional structures of ac-driven carbon quantum dot light emitting devices according to different embodiments of the present invention, embodiments provide a carbon quantum dot light emitting device, which includes a substrate 100, an anode layer 101, a dielectric layer 102/112, a hole transport layer 103/113, a quantum dot light emitting layer 104, an electron transport layer 105, and a cathode layer 106, wherein the quantum dot light emitting layer 104 is made of carbon quantum dots, and ac power is applied to two ends of the cathode layer 106 and the anode layer 101 to ac-drive the carbon quantum dot light emitting device.
The deposition sequence of the carbon quantum dot light-emitting device can be divided into three conditions according to the different quantities of the hole transport layer and the dielectric layer: the first is to deposit a transparent conductive anode 101 on a glass substrate 100, a dielectric layer 102 on the transparent conductive anode 101, a hole transport layer 103 on the dielectric layer 102, a quantum dot light emitting layer 104 on the hole transport layer 103, an electron transport layer 105 on the quantum dot light emitting layer 104, and a cathode layer 106, as shown in fig. 1. The second is to deposit a transparent conductive anode 101 on a glass substrate 100, a dielectric layer 102 on the transparent conductive anode 101, a hole transport layer 103 on the dielectric layer 102, a hole transport layer 113 on the hole transport layer 103, a quantum dot light emitting layer 104 on the hole transport layer 113, an electron transport layer 105 on the quantum dot light emitting layer 104, and a cathode layer 106 on the electron transport layer 105, as shown in fig. 2. The third is to deposit a transparent conductive anode 101 on a glass substrate 100, a dielectric layer 102 on the transparent conductive anode 101, a hole transport layer 103 on the dielectric layer 102, a hole transport layer 113 on the hole transport layer 103, a quantum dot light emitting layer 104 on the hole transport layer 113, an electron transport layer 105 on the quantum dot light emitting layer 104, a dielectric layer 112 on the electron transport layer 105, and finally a cathode layer 106, as shown in fig. 3.
Wherein the dielectric layer is laminated on the lower surface of the hole transport layer, or the dielectric layer is laminated on the lower surface of the hole transport layer and the upper surface of the electron transport layer respectively.
The material of the dielectric layer comprises polymer or metal oxide, and the preparation method of the dielectric layer comprises a spin coating method, a vacuum evaporation method or a magnetron sputtering method.
The polymer comprises polyvinylpyrrolidone or polymethyl methacrylate, the metal oxide comprises silicon dioxide, aluminum oxide, hafnium oxide or zirconium oxide, and the thickness of the metal oxide is 10nm-5 mu m.
The material of the hole injection layer comprises MoOxOr PEDOT.
The hole transport layer is a single layer or a double layer, and the material of the single layer hole transport layer comprises PEDOT or MoOxThe double-layer hole transport layer is formed by depositing a layer of PVK, Poly-TPD, TFB or perovskite on the basis of a single-layer hole transport layer by a solution method, wherein the deposition method comprises one of a spin coating method, a dip coating method, a blade coating method, a casting method, a spraying method, a screen printing method or an ink-jet printing method.
The electron transport layer is made of metal oxide nanoparticles prepared by solution method, such as ZnO and TiO2、SnO2And n-type semiconductor materials and mixtures of metal oxides and metals, such as LiZnO, MgZnO, and the like.
The invention is described in detail below with reference to the figures and the specific embodiments.
Example 1
Fig. 1 is a schematic cross-sectional structure diagram of an embodiment of an ac-driven carbon quantum dot light emitting device provided by the present invention. The carbon quantum dot light emitting device includes a substrate 100, an anode layer 101, a dielectric layer 102, a hole transport layer 103, a quantum dot light emitting layer 104, an electron transport layer 105, and a cathode layer 106.
The substrate 100 is glass, the anode layer 101 is a transparent conductive electrode, and the ITO conductive film is prepared by a magnetron sputtering method; then, sequentially ultrasonically cleaning, drying and carrying out plasma treatment on the substrate 100 with the ITO by using acetone, isopropanol and deionized water; then, depositing a dielectric layer 102 on the ITO-bearing glass substrate 100, wherein the material is PMMA, and the thickness is 10nm-5 mu m; the hole transport layer 103 is made of MoOxThe thickness is 5-50 nm; followed by deposition on hole transport layer 103A quantum dot light-emitting layer 104, wherein the quantum dot light-emitting layer 104 is made of carbon quantum dots, and the thickness of the quantum dot light-emitting layer 104 is 5-50 nm; the electron transport layer 105 is made of ZnO nanoparticles prepared by a solution method, and the thickness of the ZnO nanoparticles is 5-50 nm; the cathode layer 106 is made of Ag material, wherein the thickness of Ag is 150 nm.
The dielectric layer 102, the hole transport layer 103, the quantum dot light emitting layer 104 and the electron transport layer 105 are all prepared by adopting a spin coating method; wherein the PMMA is selected with the parameters of 4000 revolutions, 100 ℃ annealing and MoOxThe selected parameters are 4000 revolutions and 100 ℃ annealing, the selected parameters of the carbon quantum dot material are 3000 revolutions and 80 ℃ annealing, the selected parameters of the ZnO material are 2000 revolutions and 80 ℃ annealing, and the cathode layer 106 is made of Ag prepared by a vacuum evaporation method; wherein the light emitted by the material of the quantum dot light emitting layer 104 is one or more of a full spectrum.
The frequency range of an alternating current power supply for driving the device is 1-20MHz, the waveform is sine wave, square wave or triangular wave, and the device can be used as a lighting lamp, a display or a backlight source.
Example 2
Fig. 2 is a schematic cross-sectional structure diagram of another embodiment of an ac-driven carbon quantum dot light-emitting device provided by the present invention. The carbon quantum dot light emitting device includes a substrate 100, an anode layer 101, a dielectric layer 102, a hole transport layer 103, a hole transport layer 113, a light emitting layer 104, an electron transport layer 105, and a cathode layer 106.
The substrate 100 is glass, the anode layer 101 is a transparent conductive electrode, and the ITO conductive film is prepared by a magnetron sputtering method; then, sequentially ultrasonically cleaning, drying and carrying out plasma treatment on the substrate 100 with the ITO by using acetone, isopropanol and deionized water; then, depositing a dielectric layer 102 on the substrate with the ITO, wherein the material is PMMA, and the thickness is 10nm-50 mu m; the hole transport layer 103 is made of MoOxThe hole transport layer 113 is made of TFB, and MoO is first introducedxDeposition on PMMA followed by deposition of TFB on MoOxThe total thickness is 5-50 nm; then, a quantum dot light-emitting layer 104 is deposited on the hole transport layer 113, wherein the quantum dot light-emitting layer 104 is made of carbon quantum dots, and the thickness of the quantum dot light-emitting layer is 5-50 nm; electronic deviceThe transmission layer 105 is made of ZnO nanoparticles prepared by a solution method, and the thickness of the transmission layer is 5-50 nm; the cathode layer 106 is made of Ag material, wherein the thickness of Ag is 150 nm.
The dielectric layer 102, the hole transport layer 103, the hole transport layer 113, the quantum dot light emitting layer 104 and the electron transport layer 105 are all prepared by adopting a spin coating method; wherein the PMMA is selected with the parameters of 4000 revolutions, 100 ℃ annealing and MoOxThe selected parameters are 4000 revolutions and 100 ℃ annealing, the parameters selected by TFB are 3000 revolutions and 100 ℃ annealing, the parameters selected by carbon quantum dots are 3000 revolutions and 80 ℃ annealing, the parameters selected by ZnO material are 2000 revolutions and 80 ℃ annealing, and the cathode layer 106 is made of Ag prepared by a vacuum evaporation method; wherein the light emitted by the material of the quantum dot light emitting layer 104 is one or more of a full spectrum.
The frequency range of an alternating current power supply for driving the device is 1-20MHz, the waveform is sine wave, square wave or triangular wave, and the device can be used as a lighting lamp, a display or a backlight source.
Example 3
Fig. 3 is a schematic cross-sectional structure diagram of another embodiment of an ac-driven carbon quantum dot light emitting device provided by the present invention. The carbon quantum dot light-emitting device comprises a substrate 100, an anode layer 101, a dielectric layer 102, a hole transport layer 103, a hole transport layer 113, a quantum dot light-emitting layer 104, an electron transport layer 105, a dielectric layer 112 and a cathode layer 106 which are sequentially stacked on the anode layer.
The substrate 100 is glass, the anode layer 101 is a transparent conductive electrode, and the ITO conductive film is prepared by a magnetron sputtering method; then, sequentially ultrasonically cleaning, drying and carrying out plasma treatment on the substrate 100 with the ITO by using acetone, isopropanol and deionized water; then, depositing a dielectric layer 102 on the substrate with the ITO, wherein the material is PMMA, and the thickness is 10nm-50 mu m; the hole transport layer 103 is made of MoOxThe hole transport layer 113 is made of TFB, and MoO is first introducedxDeposition on PMMA followed by deposition of TFB on MoOxThe total thickness is 5-50 nm; then depositing a quantum dot light-emitting layer 104 on the hole transport layer 113, wherein the material of the quantum dot light-emitting layer 104 is carbon quantum dotThe thickness is 5-50 nm; the electron transport layer 105 is made of ZnO nanoparticles prepared by a solution method, and the thickness of the ZnO nanoparticles is 5-50 nm; the dielectric layer 112 is made of PMMA with a thickness of 10nm-50 μm; the cathode layer 106 is made of Ag material, wherein the thickness of Ag is 150 nm.
The dielectric layer 102, the hole transport layer 103, the hole transport layer 113, the quantum dot light emitting layer 104, the electron transport layer 105 and the dielectric layer 112 are all prepared by adopting a spin coating method; wherein the PMMA is selected with the parameters of 4000 revolutions, 100 ℃ annealing and MoOxThe selected parameters are 4000 revolutions and 100 ℃ annealing, the parameters selected by TFB are 3000 revolutions and 100 ℃ annealing, the parameters selected by carbon quantum dots are 3000 revolutions and 80 ℃ annealing, the parameters selected by ZnO material are 2000 revolutions and 80 ℃ annealing, and the cathode layer 106 is made of Ag prepared by a vacuum evaporation method; wherein the light emitted by the material of the quantum dot light emitting layer 104 is one or more of a full spectrum.
The frequency range of an alternating current power supply for driving the device is 1-20MHz, the waveform is sine wave, square wave or triangular wave, and the device can be used as a lighting lamp, a display or a backlight source.
The above are preferred embodiments of the present invention, and all changes made according to the technical scheme of the present invention that produce functional effects do not exceed the scope of the technical scheme of the present invention belong to the protection scope of the present invention.
Claims (7)
1. The alternating current driven carbon quantum dot light emitting device is characterized by comprising a substrate, an anode layer, a dielectric layer, a hole transmission layer, a quantum dot light emitting layer, an electron transmission layer and a cathode layer, wherein the quantum dot light emitting layer is made of carbon quantum dots, and alternating current is applied to two ends of the cathode layer and two ends of the anode layer so as to drive the carbon quantum dot light emitting device in an alternating current mode.
2. An alternating current driven carbon quantum dot light emitting device according to claim 1, wherein the hole transport layer lower surface is laminated with the dielectric layer, or the hole transport layer lower surface and the electron transport layer upper surface are respectively laminated with the dielectric layer.
3. An AC driven carbon quantum dot light emitting device as claimed in claim 2, wherein the material of the dielectric layer comprises a polymer or a metal oxide.
4. An AC driven carbon quantum dot light emitting device as claimed in claim 3, wherein the polymer comprises polyvinylpyrrolidone or polymethylmethacrylate, and the metal oxide comprises silica, alumina, hafnia or zirconia, and has a thickness of 10nm to 5 μm.
5. An AC-driven carbon quantum dot light-emitting device according to claim 1, wherein the material of the hole injection layer comprises MoOxOr PEDOT.
6. An AC-driven carbon quantum dot light-emitting device as claimed in claim 1, wherein the hole transport layer is a single layer or a double layer, and the material of the single layer hole transport layer comprises PEDOT or MoOxThe double-layer hole transport layer is formed by depositing a layer of PVK, Poly-TPD, TFB or perovskite on the basis of a single-layer hole transport layer by a solution method, wherein the deposition method comprises one of a spin coating method, a dip coating method, a blade coating method, a casting method, a spraying method, a screen printing method or an ink-jet printing method.
7. An AC driven carbon quantum dot light emitting device as claimed in claim 1, wherein the material of the electron transport layer is metal oxide nanoparticles prepared by a solution method.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112186117A (en) * | 2020-11-26 | 2021-01-05 | 江汉大学 | Alternating current driving type quantum dot light-emitting diode and preparation method thereof |
| WO2024023954A1 (en) * | 2022-07-27 | 2024-02-01 | シャープディスプレイテクノロジー株式会社 | Light-emitting element and display device |
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| CN105161629A (en) * | 2015-08-18 | 2015-12-16 | Tcl集团股份有限公司 | Alternating-current drive quantum dot light-emitting diode (QLED) and preparation method thereof |
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| WO2024023954A1 (en) * | 2022-07-27 | 2024-02-01 | シャープディスプレイテクノロジー株式会社 | Light-emitting element and display device |
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