CN110879501A - Laser scanning electrode structure - Google Patents
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- CN110879501A CN110879501A CN201911012929.5A CN201911012929A CN110879501A CN 110879501 A CN110879501 A CN 110879501A CN 201911012929 A CN201911012929 A CN 201911012929A CN 110879501 A CN110879501 A CN 110879501A
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- 239000000758 substrate Substances 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000004973 liquid crystal related substance Substances 0.000 claims description 11
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 claims description 8
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000004005 microsphere Substances 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 230000004044 response Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 229910002056 binary alloy Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
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Abstract
The invention discloses a laser scanning electrode structure, which comprises: the laser scanning device comprises a substrate, wherein the surface of the substrate is provided with a plurality of laser scanning electrodes, the working areas of the laser scanning electrodes are triangular, and the plurality of laser scanning electrodes are sequentially arranged according to the size of the vertex angle of the triangle. The design method of the invention adopts the mode of overlapping and driving a plurality of electrodes, and designs the vertex angle of the electrode structure according to the binary arrangement mode, thereby further improving the response speed of laser scanning and improving the user experience.
Description
Technical Field
The invention relates to the field of microelectronics and optics, in particular to a laser scanning electrode structure.
Background
In recent years, laser scanning devices are increasingly used in daily life, such as unmanned driving, virtual interactive interfaces, 3D rapid modeling, and the like. Most scanning systems in the market at present are based on mechanical scanning instruments, and the rapid deflection scanning of the laser is realized through the rapid deflection micro total reflection mirror. In order to meet application indexes in different application scenes, higher requirements are put forward on the design and performance of a laser scanning device. Mainly expressed in the 5 aspects of service life, scanning frequency, scanning angle range, size and cost. The existing mechanical scanning devices have more limitations in certain applications, generally speaking, shorter service life due to the fragility of their systems, and lower scanning frequency limited by mechanical inertia.
Compared with mechanical scanning, the scanning frequency of laser scanning devices designed by using the electro-optics effect of VA liquid crystal has been greatly increased to be greater than 50 khz, however, in some applications, such as unmanned driving, in order to improve the safety of unmanned driving, a fast response speed is required, and thus the requirement for high scanning frequency is more and more severe. Designing a laser scan electrode structure is therefore a matter for those skilled in the art of microelectronics and optics for solution.
Disclosure of Invention
The invention provides a laser scanning electrode structure, which solves the problem of lower scanning frequency of a mechanical scanning instrument limited by mechanical inertia.
In one aspect, the present invention discloses a laser scanning electrode structure, which includes: the laser scanning device comprises a substrate, wherein the surface of the substrate is provided with a plurality of laser scanning electrodes, the working areas of the laser scanning electrodes are triangular, and the plurality of laser scanning electrodes are sequentially arranged according to the size of the vertex angle of the triangle.
Preferably, the plurality of laser scanning electrodes include a plurality of left laser scanning electrodes and a plurality of right laser scanning electrodes, and the left laser scanning electrodes are engaged with the right laser scanning electrodes.
Preferably, the left laser scan electrode and the right laser scan electrode correspond to a scan accuracy of 2 according to a deflection angle respectivelyNAre arranged in sequence, wherein N is a natural number more than or equal to 0.
Preferably, the triangle is an isosceles triangle, and the vertex angle of the isosceles triangle ranges from 0 ° to 120 °.
Preferably, the laser beam passing through the isosceles triangle is parallel to the base of the isosceles triangle.
Preferably, when the vertex angle of the triangle is 120 °, each laser scan electrode deflects an incident laser beam, and the deflection angle is 3 °.
Preferably, each of the left laser scanning electrodes is arranged in sequence according to a left laser scanning electrode with a triangle vertex angle of 120 °, a left laser scanning electrode with a triangle vertex angle of 75 °, a left laser scanning electrode with a triangle vertex angle of 40 °, a left laser scanning electrode with a triangle vertex angle of 20 °, a left laser scanning electrode with a triangle vertex angle of 10 °, and a left laser scanning electrode with a triangle vertex angle of 5 °.
Preferably, each of the right laser scanning electrodes is arranged in sequence according to a right laser scanning electrode with a triangle vertex angle of 120 °, a right laser scanning electrode with a triangle vertex angle of 75 °, a right laser scanning electrode with a triangle vertex angle of 40 °, a right laser scanning electrode with a triangle vertex angle of 20 °, a right laser scanning electrode with a triangle vertex angle of 10 °, and a right laser scanning electrode with a triangle vertex angle of 5 °.
Preferably, the deflection angle is calculated in the following manner:
Δθ＝|θin-θout|
on the other hand, the invention also discloses a laser scanning device, which is characterized by comprising: the liquid crystal display panel comprises a first substrate, a laser scanning electrode structure, a ferroelectric liquid crystal layer, a laser transmission layer and a second substrate, wherein the laser scanning electrode structure is arranged on the surface of the first substrate.
Based on the foregoing laser scanning electrode structure, the present invention further provides a method for controlling a laser scanning electrode structure, which uses the laser scanning electrode according to claim 1 to perform the following steps:
s1, setting the working area of the laser scanning electrode to be triangular, and obtaining the corresponding relation between the vertex angle of the triangle and the deflection angle of the laser beam passing through the ferroelectric liquid crystal;
s2, determining the number of the laser scanning electrodes with different vertex angles according to the corresponding relation, the scanning precision and the scanning range;
s3, arranging the laser scanning electrodes, and arranging the laser scanning electrodes on the laser scanning electrode structure according to the angle of the vertex angle of the triangle.
Meanwhile, the invention also provides a manufacturing method of the laser scanning device, which comprises the following steps:
s11, manufacturing a laser scanning device substrate, namely manufacturing a Si and SiO2 substrate;
s12, manufacturing a laser scanning electrode structure 2 arranged on the surface of the first substrate 1;
s13, sealing the liquid crystal.
13. The method for manufacturing a laser scanning device according to claim 12, wherein:
the step S13 includes the steps of:
s131, uniformly spin-coating a PI alignment agent on the prepared second substrate;
s132, performing light irradiation or rubbing by using a UV lamp to perform certain initial orientation;
s133, coating UVspacer gel containing microspheres along the periphery of the second substrate, and reserving a filling opening;
s134, attaching the second substrate to the laser scanning electrode structure arranged on the surface of the first substrate, controlling the thickness of a gap to be about 5 microns, and curing by using UV lamp light irradiation;
and S135, pouring liquid crystal from the pouring opening, and sealing and curing by using gel.
In summary, the laser scanning electrode structure disclosed in the present invention includes: the laser scanning device comprises a substrate, wherein the surface of the substrate is provided with a plurality of laser scanning electrodes, the working areas of the laser scanning electrodes are triangular, and the plurality of laser scanning electrodes are sequentially arranged according to the size of the vertex angle of the triangle. The design method of the invention adopts the mode of overlapping and driving a plurality of electrodes, and designs the vertex angle of the electrode structure according to the binary arrangement mode, thereby further improving the response speed of laser scanning and improving the user experience.
Drawings
Fig. 1 is a one-dimensional laser scanning structure diagram of a laser scanning electrode structure according to an embodiment of the present invention.
Fig. 2 is a diagram showing a relationship between a deflection angle and an electrode vertex angle when an incident ray of a laser scanning electrode structure is parallel to a bottom edge according to an embodiment of the present invention.
Fig. 3 is a schematic diagram of the laser scanning electrode structure according to the embodiment of the present invention, in which the laser beam is incident into the prism in parallel with the bottom side of the isosceles triangle.
FIG. 4 is a schematic diagram of a ferroelectric liquid crystal ITO electrode structure of a laser scanning electrode structure according to an embodiment of the present invention.
Fig. 5 is a schematic structural diagram of a left laser scanning electrode structure and a right laser scanning electrode structure according to an embodiment of the invention.
Fig. 6 is a flowchart of a method for manufacturing a laser scanning device with a laser scanning electrode structure according to an embodiment of the present invention.
Fig. 7 is a flowchart of liquid crystal encapsulation of the laser scanning device having the laser scanning electrode structure according to the embodiment of the present invention.
Detailed Description
Features and exemplary embodiments of various aspects of the present invention will be described in detail below, and in order to make objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not to be construed as limiting the invention. It will be apparent to one skilled in the art that the present invention may be practiced without some of these specific details. The following description of the embodiments is merely intended to provide a better understanding of the present invention by illustrating examples of the present invention.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The invention discloses a laser scanning electrode structure, which comprises: the laser scanning device comprises a substrate, wherein the surface of the substrate is provided with a plurality of laser scanning electrodes, the working areas of the laser scanning electrodes are triangular, and the plurality of laser scanning electrodes are sequentially arranged according to the size of the vertex angle of the triangle.
Referring to fig. 4 to 5, the plurality of laser scan electrodes include a plurality of left laser scan electrodes and a plurality of right laser scan electrodes, and the left laser scan electrodes are engaged with the right laser scan electrodes.
Preferably, the left laser scan electrode and the right laser scan electrode correspond to a scan accuracy of 2 according to a deflection angle respectivelyNAre arranged in sequence, wherein N is a natural number more than or equal to 0.
Referring to fig. 2 and 3, the triangle is an isosceles triangle, and the vertex angle of the isosceles triangle ranges from 0 ° to 120 °. In this embodiment, when the vertex angle of the isosceles triangle is increased from 0 ° to 120 °, the laser deflection angle is increased to 3 ° at most, and the relationship between the laser deflection angle and the isosceles triangle is close to a linear relationship.
Preferably, the incident laser beam passing through the isosceles triangle is parallel to the base of the isosceles triangle.
Preferably, when the vertex angle of the triangle is 120 °, each laser scan electrode deflects an incident laser beam, and the deflection angle is 3 °.
Preferably, each of the left laser scanning electrodes is arranged in sequence according to a left laser scanning electrode with a triangle vertex angle of 120 °, a left laser scanning electrode with a triangle vertex angle of 75 °, a left laser scanning electrode with a triangle vertex angle of 40 °, a left laser scanning electrode with a triangle vertex angle of 20 °, a left laser scanning electrode with a triangle vertex angle of 10 °, and a left laser scanning electrode with a triangle vertex angle of 5 °.
Specifically, as shown in fig. 5, in the present embodiment, the vertex angle of the triangle of the first left laser scan electrode LE01, the second left laser scan electrode LE02, the third left laser scan electrode LE03, and the fourth left laser scan electrode LE04 is 120 °, that is, each of the left laser scan electrodes deflects the incident laser beam by 3 °, and the laser beam enters from the arrow direction in fig. 5 in the top view.
Preferably, the triangular electrodes are designed according to a binary system from the fifth left laser scanning electrode. In this embodiment, the scanning range of the laser electrode is set to 30 °, the sampling point is 300 points, and the minimum deflection angle needs to be 0.1 °. When the precision is set to be 0.1 degrees, the corresponding relation between the vertex angle of the triangle and the deflection angle is as follows:
0.1X 24 is 1.6 °, corresponding to an apex angle of 75 °,
0.1X 23 is equal to 0.8 °, corresponding to a vertex angle of 40 °,
0.1X 22 equals 0.4 deg., corresponding to an apex angle of 20 deg.,
0.1X 21 is equal to 0.2 °, corresponding to an apex angle of 10 °,
0.1X 20 is 0.1 °, corresponding to an apex angle of 5 °.
Specifically, in this embodiment, the vertex angle of the triangle of the fifth left laser scanning electrode LE05 is 75 °, the vertex angle of the triangle of the sixth left laser scanning electrode LE06 is 40 °, the vertex angle of the triangle of the seventh left laser scanning electrode LE07 is 20 °, the vertex angle of the triangle of the eighth left laser scanning electrode LE08 is 10 °, and the vertex angle of the triangle of the ninth left laser scanning electrode LE09 is 5 °. It is understood that, in another preferred embodiment, the precision may vary according to the scanning range and the number of sampling points of the laser electrode, and is not particularly limited herein. When the precision is changed, the triangular electrode is designed according to the binary system, and the size of the corresponding vertex angle is correspondingly changed. The deflection angle required by the vertex angle of the electrode at different positions is changed according to the binary system, so that the better scanning frequency and scanning range are ensured.
Preferably, each of the right laser scanning electrodes is arranged in sequence according to a right laser scanning electrode with a triangle vertex angle of 120 °, a right laser scanning electrode with a triangle vertex angle of 75 °, a right laser scanning electrode with a triangle vertex angle of 40 °, a right laser scanning electrode with a triangle vertex angle of 20 °, a right laser scanning electrode with a triangle vertex angle of 10 °, and a right laser scanning electrode with a triangle vertex angle of 5 °.
Specifically, in this embodiment, as shown in fig. 5, the triangle vertex angle of the first right laser scan electrode RE01, the second right laser scan electrode RE02, the third right laser scan electrode RE03, and the fourth right laser scan electrode RE04 is 120 °, the triangle vertex angle of the fifth right laser scan electrode RE05 is 75 °, the triangle vertex angle of the sixth right laser scan electrode RE06 is 40 °, the triangle vertex angle of the seventh right laser scan electrode RE07 is 20 °, the triangle vertex angle of the eighth right laser scan electrode RE08 is 10 °, and the triangle vertex angle of the ninth right laser scan electrode RE09 is 5 °.
Preferably, the present embodiment adopts a manner of driving a plurality of electrodes in a stacked manner to achieve precise and fast scanning. For example, when the unidirectional scan angle is 2 °, the eighth right laser scan electrode RE08 and the eighth left laser scan electrode LE08 perform the overlapping scan with the interworking voltage; when the unidirectional scanning angle is 7 °, the third right laser scanning electrode RE03, the fourth right laser scanning electrode RE04, the sixth right laser scanning electrode RE06, the eighth right laser scanning electrode RE08 and the corresponding left laser scanning electrode perform overlay scanning; when the unidirectional scanning angle is 13 °, the first right laser scanning electrode RE01, the second right laser scanning electrode RE02, the third right laser scanning electrode RE03, the fourth right laser scanning electrode RE04, the sixth right laser scanning electrode RE06, the eighth right laser scanning electrode RE08, and the corresponding left laser scanning electrode are scanned in a superimposed manner. In another preferred embodiment, when the unidirectional scanning angle is 13 °, if error compensation is required, the fifth right laser scanning electrode RE05, the seventh right laser scanning electrode RE07, and the ninth right laser scanning electrode RE09 may be used simultaneously for reverse modulation.
Preferably, the deflection angle is calculated in the following manner:
Δθ＝|θin-θout|
specifically, n1 is the first steady state index of refraction and n2 is the second steady state index of refraction. In this embodiment, the first steady state refractive index has a value of 1.5, and the second steady state refractive index has a value of 1.53.
Specifically, referring to fig. 1, the present invention further provides a laser scanning device, which mainly includes: the liquid crystal display panel comprises a first substrate 1, a laser scanning electrode structure 2 arranged on the surface of the first substrate 1, a ferroelectric liquid crystal layer 3, a laser transmission layer 4 and a second substrate 5. Incident light is inputted from the laser-transmissive layer in the direction of the arrow in fig. 1, wherein the second substrate 5 includes: a SiO2 substrate 51 and a Si substrate 52. Wherein a laser transmission layer 4 is disposed adjacent to the ferroelectric liquid crystal layer 3 as a light guide core layer, which is an element that mainly transmits a laser beam. As shown in fig. 6, the manufacturing method of the laser scanning device of the present invention mainly includes:
s11, manufacturing a laser scanning device substrate, namely manufacturing a Si and SiO2 substrate.
The deeply doped conductive Si substrate 52 is selected to have a resistivity of less than 1cm. omega. An optical guiding layer film of SiO2 (SiO2 substrate 51) with a thickness of about 2um is coated by PECVD on a Si substrate with a standard thickness (about 500 um). Then, a SiN film is plated to a thickness of about 650 nm.
S12, manufacturing a laser scanning electrode structure 2 arranged on the surface of the first substrate 1;
specifically, the continuous conductive film is etched into two parts by a photolithography method. And the two parts are staggered and meshed with each other. Referring to fig. 4, in a top view, the laser is emitted from the direction of the arrow in fig. 4, the middle broken line is a non-conductive etching portion, and the width of the etching portion can be adjusted by changing the etching template. In this embodiment, the conductive thin film is selected from a conductive thin film ITO grown on glass. It is understood that the conductive film may be of other transparent conductive materials. The material and structure of the conductive film are not particularly limited herein.
S13, sealing the liquid crystal.
Specifically, referring to fig. 7, the process flow of liquid crystal encapsulation includes:
s131, uniformly spin-coating a PI alignment agent on the prepared second substrate;
s132, performing light irradiation or rubbing by using a UV lamp to perform certain initial orientation;
s133, coating UVspacer gel containing microspheres along the periphery of the second substrate, and reserving a filling opening;
s134, attaching the second substrate to the laser scanning electrode structure arranged on the surface of the first substrate, controlling the thickness of a gap to be about 5 microns, and curing by using UV lamp light irradiation;
and S135, pouring liquid crystal from the pouring opening, and sealing and curing by using gel.
In summary, the laser scanning electrode structure disclosed in the present invention includes: the laser scanning device comprises a substrate, wherein a plurality of laser scanning electrodes are arranged on the surface of the substrate, the working area of each laser scanning electrode is triangular, and the plurality of laser scanning electrodes are sequentially arranged according to the size of the vertex angle of the triangle. The design method of the invention adopts the mode of overlapping and driving a plurality of electrodes, and designs the vertex angle of the electrode structure according to the binary arrangement mode, thereby further improving the response speed of laser scanning and improving the user experience.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes may be made to the present invention by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (13)
1. A laser scanning electrode structure, comprising: the laser scanning device comprises a substrate, wherein the surface of the substrate is provided with a plurality of laser scanning electrodes, the working areas of the laser scanning electrodes are triangular, and the plurality of laser scanning electrodes are sequentially arranged according to the size of the vertex angle of the triangle.
2. The laser scan electrode structure of claim 1, wherein the plurality of laser scan electrodes comprises a plurality of left laser scan electrodes and a plurality of right laser scan electrodes, and the left laser scan electrodes and the right laser scan electrodes are mutually engaged.
3. The laser scan electrode structure of claim 2, wherein the left laser scan electrode and the right laser scan electrode correspond to a scan accuracy of 2 according to a deflection angle, respectivelyNAre arranged in sequence, wherein N is a natural number more than or equal to 0.
4. The laser scanning electrode structure of claim 3, wherein the triangle is an isosceles triangle, and the vertex angle of the isosceles triangle ranges from 0 ° to 120 °.
5. The laser scanning electrode structure of claim 4, wherein the laser beam passing through the waist of the isosceles triangle is parallel to the base of the isosceles triangle.
6. The laser scan electrode structure of claim 5, wherein each laser scan electrode deflects an incident laser beam when the vertex angle of the triangle is 120 °, and the deflection angle is 3 °.
7. The laser scanning electrode structure of claim 6, wherein each of the left laser scanning electrodes is arranged in the order of a left laser scanning electrode with a triangle vertex angle of 120 °, a left laser scanning electrode with a triangle vertex angle of 75 °, a left laser scanning electrode with a triangle vertex angle of 40 °, a left laser scanning electrode with a triangle vertex angle of 20 °, a left laser scanning electrode with a triangle vertex angle of 10 °, and a left laser scanning electrode with a triangle vertex angle of 5 °.
8. The laser scanning electrode structure of claim 7, wherein each of the right laser scanning electrodes is arranged in order of a right laser scanning electrode with a triangle vertex angle of 120 °, a right laser scanning electrode with a triangle vertex angle of 75 °, a right laser scanning electrode with a triangle vertex angle of 40 °, a right laser scanning electrode with a triangle vertex angle of 20 °, a right laser scanning electrode with a triangle vertex angle of 10 °, and a right laser scanning electrode with a triangle vertex angle of 5 °.
9. The laser scan electrode structure of claim 2, wherein the deflection angle is calculated by:
Δθ＝|θin-θout|
10. a laser scanning apparatus, characterized in that the apparatus comprises: the laser scanning device comprises a first substrate, a laser scanning electrode structure, a ferroelectric liquid crystal layer, a laser transmission layer and a second substrate, wherein the laser scanning electrode structure, the ferroelectric liquid crystal layer, the laser transmission layer and the second substrate are arranged on the surface of the first substrate, and the laser scanning electrode structure is as claimed in any one of claims 1 to 9.
11. A laser scanning electrode structure control method, characterized in that, with the laser scanning electrode according to any one of claims 1 to 9, the following steps are carried out:
s1, setting the working area of the laser scanning electrode to be triangular, and obtaining the corresponding relation between the vertex angle of the triangle and the deflection angle of the laser beam passing through the ferroelectric liquid crystal;
s2, determining the number of the laser scanning electrodes with different vertex angles according to the corresponding relation, the scanning precision and the scanning range;
s3, arranging the laser scanning electrodes, and arranging the laser scanning electrodes on the laser scanning electrode structure according to the angle of the vertex angle of the triangle.
12. A manufacturing method of a laser scanning device is characterized in that: the method comprises the following steps:
s11, manufacturing a laser scanning device substrate, namely manufacturing a Si and SiO2 substrate;
s12, manufacturing a laser scanning electrode structure 2 arranged on the surface of the first substrate 1;
s13, sealing the liquid crystal.
13. The method for manufacturing a laser scanning device according to claim 12, wherein: the step S13 includes the steps of:
s131, uniformly spin-coating a PI alignment agent on the prepared second substrate;
s132, performing light irradiation or rubbing by using a UV lamp to perform certain initial orientation;
s133, coating UVspacer gel containing microspheres along the periphery of the second substrate, and reserving a filling opening;
s134, attaching the second substrate to the laser scanning electrode structure arranged on the surface of the first substrate, controlling the thickness of a gap to be about 5 microns, and curing by using UV lamp light irradiation;
and S135, pouring liquid crystal from the pouring opening, and sealing and curing by using gel.
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| CN201911012929.5A CN110879501A (en) | 2019-10-23 | 2019-10-23 | Laser scanning electrode structure |
| PCT/CN2020/123151 WO2021078243A1 (en) | 2019-10-23 | 2020-10-23 | Laser scanning electrode device and setting method, and laser scanning apparatus and manufacturing method |
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| WO2021078243A1 (en) * | 2019-10-23 | 2021-04-29 | 南方科技大学 | Laser scanning electrode device and setting method, and laser scanning apparatus and manufacturing method |
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| US7403316B2 (en) * | 2004-01-14 | 2008-07-22 | Ricoh Company, Ltd. | Optical scanning device, image forming apparatus and liquid crystal device driving method |
| CN103777432B (en) * | 2014-03-04 | 2016-10-05 | 上海交通大学 | Spatial light modulator and light field three-dimensional display system thereof |
| CN109116597B (en) * | 2018-09-21 | 2024-01-16 | 深圳市速腾聚创科技有限公司 | Liquid crystal optical waveguide and laser radar |
| CN110879501A (en) * | 2019-10-23 | 2020-03-13 | 南方科技大学 | Laser scanning electrode structure |
| CN110764332B (en) * | 2019-10-23 | 2023-11-28 | 南方科技大学 | Laser scanning control method based on waveguide type liquid crystal |
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