CN110876048A - Laser scanning projection system - Google Patents
Laser scanning projection system Download PDFInfo
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- CN110876048A CN110876048A CN201911202845.8A CN201911202845A CN110876048A CN 110876048 A CN110876048 A CN 110876048A CN 201911202845 A CN201911202845 A CN 201911202845A CN 110876048 A CN110876048 A CN 110876048A
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- mems galvanometer
- laser
- projection system
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N9/00—Details of colour television systems
- H04N9/12—Picture reproducers
- H04N9/31—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM]
- H04N9/3129—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM] scanning a light beam on the display screen
- H04N9/3135—Driving therefor
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Abstract
The application discloses a laser scanning projection system, wherein a first preset plane is perpendicular to a substrate and a rotating shaft of a first single-axis MEMS vibrating mirror, so that when scanning laser enters a reflecting surface of the first single-axis MEMS vibrating mirror to form first reflection laser, the first reflection laser cannot obviously bend a propagation path due to the rotation of the first single-axis MEMS vibrating mirror; similarly, the second preset plane is perpendicular to the substrate and the rotating shaft of the second single-axis MEMS galvanometer, so that the scanning beam formed by reflection of the second single-axis MEMS galvanometer cannot obviously bend a propagation path due to rotation of the second single-axis MEMS galvanometer, and an image finally formed on a screen cannot have obvious asymmetric distortion, so that the purpose of reducing distortion of a projected image of a laser scanning projection system is achieved, and the problems that the projected image of the laser scanning projection system in the prior art is obvious in distortion and difficult to correct are solved.
Description
Technical Field
The present application relates to the field of display technologies, and more particularly, to a laser scanning projection system.
Background
With the continuous development of projection technology, various projection modes are continuously generated. The mature projection modes in the prior art include an LCOS (Liquid Crystal on Silicon) projection mode, a DLP (Digital light processing) projection mode, and the like.
The DLP projection mode firstly digitally processes the image signal and then projects light. It is based on DMD (digital micro mirror device) to complete the display of visual digital information. LCOS is a reflective display technology that combines LCD (liquid Crystal display) and CMOS (complementary Metal Oxide semiconductor) integrated circuits. In order to further improve parameters such as light energy utilization rate, energy consumption, volume and projection range of the projection equipment, a laser scanning projection technology is developed.
Referring to fig. 1, the laser scanning projection technology mainly uses a fast deflection mirror to control a laser beam to scan on a screen, and a desired pattern can be formed on the screen by modulating the light intensity of a laser while scanning. However, in practical application, it is found that the image projected by the existing laser scanning projection system has obvious irregular distortion, and the distortion is asymmetric and difficult to correct.
Disclosure of Invention
In order to solve the technical problem, the application provides a laser scanning projection system to realize the purpose of reducing the distortion of the projection image of the laser scanning projection system, and avoid the problems that the image distortion projected by the laser scanning projection system in the prior art is obvious and is difficult to correct.
In order to achieve the technical purpose, the embodiment of the application provides the following technical scheme:
a scanning laser projection system, comprising: the MEMS galvanometer comprises a laser light source, a first single-axis MEMS galvanometer and a second single-axis MEMS galvanometer; wherein the content of the first and second substances,
the laser light source is used for emitting scanning laser;
the first single-axis MEMS galvanometer is arranged on an emergent light path of the scanning laser, so that the scanning laser is incident on a reflecting surface of the first single-axis MEMS galvanometer in a first preset plane to form first reflected laser; the first preset plane is vertical to the substrate of the first uniaxial MEMS galvanometer and the rotating shaft of the first uniaxial MEMS galvanometer;
the second single-axis MEMS galvanometer is arranged on an emergent light path of the first reflected laser, so that the first reflected laser is incident on a reflecting surface of the second single-axis MEMS galvanometer in a second preset plane to form a scanning beam emergent; the second preset plane is perpendicular to the substrate of the second uniaxial MEMS galvanometer and the rotating shaft of the second uniaxial MEMS galvanometer.
Optionally, when the first uniaxial MEMS galvanometer is in an initial static state, an incident angle of the scanning laser on the reflecting surface of the first uniaxial MEMS galvanometer within the first preset plane is a first preset value.
Optionally, the value range of the first preset value is 10 ° to 40 °.
Optionally, when the second uniaxial MEMS galvanometer is in an initial static state, an incident angle of the first reflected laser on a reflecting surface of the second uniaxial MMES galvanometer in the second preset plane is preset to a second preset value.
Optionally, the value range of the second preset value is 10 ° to 40 °.
Optionally, the first single-axis MEMS galvanometer operates at a resonant state.
Optionally, the second single-axis MEMS galvanometer operates in a forced-driven manner.
Optionally, the working frequency of the second uniaxial MEMS galvanometer is an image refresh frequency.
It can be seen from the above technical solution that this application embodiment provides a laser scanning projection system, laser scanning projection system's first unipolar MEMS shakes the mirror and is disposed on the emergent light path of scanning laser, so that scanning laser incides in the first predetermined plane on the plane of reflection of first unipolar MEMS shakes the mirror, and second unipolar MEMS shakes the mirror and is disposed on the emergent light path of first reflection laser, so that first reflection laser incides on its plane of reflection in the second predetermined plane, because first predetermined plane with the substrate and the axis of rotation of first unipolar MEMS shakes the mirror are all perpendicular, therefore scanning laser forms first reflection laser when inciding on the plane of reflection of first unipolar MEMS shakes, first reflection laser can not make propagation path obviously crooked because of the rotation of first unipolar MEMS shakes the mirror; similarly, the second preset plane is perpendicular to the substrate and the rotating shaft of the second single-axis MEMS galvanometer, so that the scanning beam formed by reflection of the second single-axis MEMS galvanometer cannot obviously bend a propagation path due to rotation of the second single-axis MEMS galvanometer, and an image finally formed on a screen cannot have obvious asymmetric distortion, so that the purpose of reducing distortion of a projected image of a laser scanning projection system is achieved, and the problems that the projected image of the laser scanning projection system in the prior art is obvious in distortion and difficult to correct are solved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, it is obvious that the drawings in the following description are only embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a scanning schematic diagram of a laser scanning projection system;
FIG. 2 is a schematic diagram of a laser scanning projection system according to the prior art;
FIG. 3 is a schematic diagram of image distortion of a projection image of a laser scanning projection system in the prior art;
FIG. 4 is a schematic diagram of a laser scanning projection system according to an embodiment of the present application;
FIG. 5 is a schematic diagram of a first uniaxial MEMS galvanometer provided by an embodiment of the present application;
FIG. 6 is a schematic diagram of a second uniaxial MEMS galvanometer provided by an embodiment of the present application;
FIG. 7 is a schematic illustration of a first predetermined plane and a substrate relationship of a first uniaxial MEMS galvanometer provided by an embodiment of the present application;
FIG. 8 is a schematic diagram of a second predetermined plane and a substrate relationship of a second uniaxial MEMS galvanometer provided by an embodiment of the present application;
FIG. 9 is an incident view of a scanning laser and a first uniaxial MEMS galvanometer according to one embodiment of the present application;
FIG. 10 is a schematic diagram of a first reflected laser and a second uniaxial MEMS galvanometer according to one embodiment of the present application;
FIG. 11 is a schematic illustration of distortion in an image of a laser scanning projection system according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
As mentioned in the background, the projected image of the prior art laser scanning projection system has a significant irregular distortion, which is asymmetric and difficult to correct. The reason why the above-described problems occur in the prior art is described below.
Referring to fig. 2, fig. 2 is a schematic structural diagram of a laser scanning projection system in the prior art, the laser scanning projection system includes two vibrating mirrors arranged in parallel, the mirror surfaces of the two vibrating mirrors are arranged in parallel and opposite to each other, although the arrangement is favorable for reducing the size of the laser scanning projection system, when scanning laser emitted by a laser source is incident on one of the vibrating mirrors, the scanning laser can be divided into two vector directions, after the vibrating mirrors rotate, the other vector direction perpendicular to the rotating direction of the vibrating mirrors also changes, so that the light reflected by the vibrating mirrors is not a straight line but a curved light, after the light is reflected by the other vibrating mirrors, the degree of curvature of the emitted light is increased, referring to fig. 3, an image finally formed on a screen has a relatively obvious special-shaped distortion, which is not symmetrical and is difficult to correct from left to right, up to down, the visual experience of the user is negatively affected.
In view of this, an embodiment of the present application provides a laser scanning projection system, as shown in fig. 4, including: a laser light source 10, a first uniaxial MEMS galvanometer 20 and a second uniaxial MEMS galvanometer 30; wherein the content of the first and second substances,
the laser light source 10 is used for emitting scanning laser;
the first uniaxial MEMS galvanometer 20 is arranged on an emergent light path of the scanning laser, so that the scanning laser is incident on a reflecting surface of the first uniaxial MEMS galvanometer 20 in a first preset plane to form first reflected laser; the first preset plane is perpendicular to both the substrate of the first uniaxial MEMS galvanometer 20 and the rotating shaft of the first uniaxial MEMS galvanometer 20;
the second uniaxial MEMS galvanometer 30 is arranged on an emergent light path of the first reflected laser, so that the first reflected laser is incident on a reflecting surface of the second uniaxial MEMS galvanometer 30 in a second preset plane to form a scanning light beam emergent; the second preset plane is perpendicular to the substrate of the second uniaxial MEMS galvanometer 30 and the rotation axis of the second uniaxial MEMS galvanometer 30.
SC in fig. 4 represents a screen or a position where the screen is located.
Referring to fig. 5 and 6, fig. 5 is a schematic structural diagram of a first uniaxial MEMS galvanometer 20 according to an embodiment of the present disclosure, and fig. 5 shows structures of a substrate 23, a rotating shaft 22, a micromirror 21, and the like of the first uniaxial MEMS galvanometer 20.
Fig. 6 is a schematic structural diagram of a second uniaxial MEMS galvanometer 30 according to an embodiment of the present application, and fig. 6 shows structures of a substrate 33, a rotating shaft 32, and a micro mirror 31 of the second uniaxial MEMS galvanometer 30.
Referring to fig. 7 and 8, fig. 7 shows a schematic substrate intersection (line AA) of the first predetermined plane and the first uniaxial MEMS galvanometer 20. Fig. 8 shows a schematic substrate intersection (BB line) of the second predetermined plane with the second uniaxial MEMS galvanometer 30.
Referring to fig. 9 and 10, fig. 9 is a schematic cross-sectional view along line AA in fig. 7, showing an incident view of the scanning laser light and the first uniaxial MEMS galvanometer 20, and θ in fig. 9 represents an incident angle of the scanning laser light and the first uniaxial MEMS galvanometer 20. Fig. 10 is a cross-sectional view taken along line BB of fig. 8, showing the incidence of the first reflected laser light and the second uniaxial MEMS galvanometer 30.
As can be seen from fig. 4 to 10, in this embodiment, the first uniaxial MEMS galvanometer 20 of the laser scanning projection system is disposed on the emitting light path of the scanning laser light, so that the scanning laser light is incident on the reflecting surface of the first uniaxial MEMS galvanometer 20 in a first predetermined plane, and the second uniaxial MEMS galvanometer 30 is disposed on the emitting light path of the first reflected laser light, so that the first reflected laser light is incident on the reflecting surface thereof in a second predetermined plane, and since the first predetermined plane is perpendicular to the substrate and the rotation axis of the first uniaxial MEMS galvanometer 20, when the scanning laser light forms the first reflected laser light incident on the reflecting surface of the first uniaxial MEMS galvanometer 20, the first reflected laser light does not significantly bend the propagation path due to the rotation of the first uniaxial MEMS galvanometer 20; similarly, the second preset plane is perpendicular to the substrate and the rotating shaft of the second uniaxial MEMS galvanometer 30, so that the scanning beam formed by reflection of the second uniaxial MEMS galvanometer 30 cannot be obviously bent in the propagation path due to the rotation of the second uniaxial MEMS galvanometer 30, and thus, an image finally formed on a screen cannot have obvious asymmetric distortion, the purpose of reducing distortion of a projected image of the laser scanning projection system is achieved, and the problems that the projected image of the laser scanning projection system in the prior art is obvious in distortion and difficult to correct are solved.
On the basis of the above embodiment, in an optional embodiment of the present application, when the first uniaxial MEMS galvanometer 20 is in an initial static state, an incident angle of the scanning laser incident on the reflecting surface of the first uniaxial MEMS galvanometer 20 in the first preset plane is a first preset value.
Referring to fig. 5, the initial rest state of the first uniaxial MEMS galvanometer 20 refers to a state when the micro mirrors of the first uniaxial MEMS galvanometer 20 are parallel to the substrate.
Optionally, a value range of the first preset value is 10 ° to 40 °, for example, the first preset value may be 20 °, 10 ° or 30 °, and when the value of the first preset value is smaller, the effective aperture of the first uniaxial MEMS galvanometer 20 is larger, and the light utilization efficiency is higher.
On the basis of the above embodiment, in another optional embodiment of the present application, when the second uniaxial MEMS galvanometer 30 is in the initial static state, the incident angle of the first reflected laser light on the reflecting surface of the second uniaxial MMES galvanometer is preset to be a second preset value in the second preset plane.
Referring to fig. 6, the initial rest state of the second uniaxial MEMS galvanometer 30 is a state when the micro-mirrors of the second uniaxial MEMS galvanometer 30 are parallel to the substrate thereof.
Optionally, the value range of the second preset value is 10 ° to 40 °. For example, the second preset value may be 20 °, 10 °, or 30 °, and when the value of the second preset value is smaller, the effective aperture of the second uniaxial MEMS galvanometer 30 is larger, and the light utilization efficiency is higher.
On the basis of the above embodiment, in a further embodiment of the present application, the first uniaxial MEMS galvanometer 20 operates in a resonant state.
The second single axis MEMS galvanometer 30 operates in a forced driven manner.
The operating frequency of the second single-axis MEMS galvanometer 30 is an image refresh frequency.
Optionally, the image refresh frequency is 60 Hz.
In order to verify the imaging effect of the laser scanning projection system provided by the embodiment of the present application, in a specific embodiment of the present application, the screen is placed 800cm away from the laser scanning projection system, the optical scanning angle of the first single-axis MEMS galvanometer is 40 °, and the distortion of the image obtained when the optical scanning angle of the second single-axis MEMS galvanometer is 24 ° is schematically shown in fig. 11, where only the left and right sides have slight bending, the upper and lower sides have no bending, and the maximum left and right deformation amount is about 10%. The distortion correction needs to compress four corners of the graph to normal size, and the external optical module can correct the distortion, but can change the size of the light spot and the size of the divergence angle, so that the projection quality is influenced. During actual debugging, the fast axis scanning amplitude at the beginning and the end of the image can be reduced, so that distortion can be effectively eliminated without influencing the image quality. In addition, a smaller optical angle of incidence is desirable to reduce distortion, and the design of laser scanning projection systems should minimize the optical angle of incidence.
To sum up, this application embodiment provides a laser scanning projection system, laser scanning projection system's first unipolar MEMS shakes mirror 20 and is disposed on the emergent light path of scanning laser, so that scanning laser incides in first predetermined plane on first unipolar MEMS shakes the plane of mirror 20's reflection, and second unipolar MEMS shakes mirror 30 and is disposed on the emergent light path of first reflection laser, so that first reflection laser incides on its plane of reflection in the second predetermined plane, because first predetermined plane with first unipolar MEMS shakes the substrate of mirror 20 and axis of rotation all perpendicular, consequently scanning laser forms first reflection laser when inciding on the plane of reflection of first unipolar MEMS mirror 20, first reflection laser can not make propagation path obviously crooked because first unipolar MEMS shakes the rotation of mirror 20; similarly, the second preset plane is perpendicular to the substrate and the rotating shaft of the second uniaxial MEMS galvanometer 30, so that the scanning beam formed by reflection of the second uniaxial MEMS galvanometer 30 cannot be obviously bent in the propagation path due to the rotation of the second uniaxial MEMS galvanometer 30, and thus, an image finally formed on a screen cannot have obvious asymmetric distortion, the purpose of reducing distortion of a projected image of the laser scanning projection system is achieved, and the problems that the projected image of the laser scanning projection system in the prior art is obvious in distortion and difficult to correct are solved.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. A scanning laser projection system, comprising: the MEMS galvanometer comprises a laser light source, a first single-axis MEMS galvanometer and a second single-axis MEMS galvanometer; wherein the content of the first and second substances,
the laser light source is used for emitting scanning laser;
the first single-axis MEMS galvanometer is arranged on an emergent light path of the scanning laser, so that the scanning laser is incident on a reflecting surface of the first single-axis MEMS galvanometer in a first preset plane to form first reflected laser; the first preset plane is vertical to the substrate of the first uniaxial MEMS galvanometer and the rotating shaft of the first uniaxial MEMS galvanometer;
the second single-axis MEMS galvanometer is arranged on an emergent light path of the first reflected laser, so that the first reflected laser is incident on a reflecting surface of the second single-axis MEMS galvanometer in a second preset plane to form a scanning beam emergent; the second preset plane is perpendicular to the substrate of the second uniaxial MEMS galvanometer and the rotating shaft of the second uniaxial MEMS galvanometer.
2. The scanning laser projection system of claim 1, wherein an incident angle of the scanning laser on a reflective surface of the first uniaxial MEMS galvanometer within the first predetermined plane is a first predetermined value when the first uniaxial MEMS galvanometer is in an initial rest state.
3. The scanning laser projection system of claim 2, wherein the first predetermined value is in a range of 10 ° -40 °.
4. The scanning laser projection system of claim 1 wherein the angle of incidence of the first reflected laser light onto the reflective surface of the second uniaxial MEMS galvanometer within the second predetermined plane is predetermined to a second predetermined value when the second uniaxial MEMS galvanometer is in an initial quiescent state.
5. The scanning laser projection system of claim 4, wherein the second predetermined value is in a range of 10 ° -40 °.
6. The scanning laser projection system of claim 1, wherein the first uniaxial MEMS galvanometer operates at a resonant state.
7. The scanning laser projection system of claim 1, wherein the second uniaxial MEMS galvanometer operates in a forced-driven manner.
8. The scanning laser projection system of claim 7, wherein the operating frequency of the second uniaxial MEMS galvanometer is an image refresh frequency.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911202845.8A CN110876048A (en) | 2019-11-29 | 2019-11-29 | Laser scanning projection system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911202845.8A CN110876048A (en) | 2019-11-29 | 2019-11-29 | Laser scanning projection system |
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| CN110876048A true CN110876048A (en) | 2020-03-10 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101915994A (en) * | 2010-07-15 | 2010-12-15 | 苏州巨像科技有限公司 | Method for enhancing brightness of laser scanning projected image |
| CN102253487A (en) * | 2010-05-21 | 2011-11-23 | 常晓旺 | Laser scanning image projector |
| CN108398779A (en) * | 2018-02-12 | 2018-08-14 | 西安知微传感技术有限公司 | A kind of helical scanning laser projection method and system based on galvanometer |
| CN108873368A (en) * | 2018-08-02 | 2018-11-23 | 西安知微传感技术有限公司 | A kind of method and the micro- galvanometer of MEMS inhibiting laser speckle |
| CN110365956A (en) * | 2019-06-03 | 2019-10-22 | 歌尔股份有限公司 | A kind of projection arrangement |
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2019
- 2019-11-29 CN CN201911202845.8A patent/CN110876048A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102253487A (en) * | 2010-05-21 | 2011-11-23 | 常晓旺 | Laser scanning image projector |
| CN101915994A (en) * | 2010-07-15 | 2010-12-15 | 苏州巨像科技有限公司 | Method for enhancing brightness of laser scanning projected image |
| CN108398779A (en) * | 2018-02-12 | 2018-08-14 | 西安知微传感技术有限公司 | A kind of helical scanning laser projection method and system based on galvanometer |
| CN108873368A (en) * | 2018-08-02 | 2018-11-23 | 西安知微传感技术有限公司 | A kind of method and the micro- galvanometer of MEMS inhibiting laser speckle |
| CN110365956A (en) * | 2019-06-03 | 2019-10-22 | 歌尔股份有限公司 | A kind of projection arrangement |
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