CN110875518B - 8-notch ultra-wideband antenna structure with nested rectangular and E-shaped structures - Google Patents
8-notch ultra-wideband antenna structure with nested rectangular and E-shaped structures Download PDFInfo
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- CN110875518B CN110875518B CN201911360661.4A CN201911360661A CN110875518B CN 110875518 B CN110875518 B CN 110875518B CN 201911360661 A CN201911360661 A CN 201911360661A CN 110875518 B CN110875518 B CN 110875518B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
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Abstract
The invention discloses an 8-notch ultra-wideband antenna structure with nested rectangular and E-shaped structures, wherein the upper part and the lower part on the right side of a microstrip feeder are respectively provided with a complementary E-shaped electromagnetic band gap structure and a first E-shaped electromagnetic band gap structure, and the left side of the microstrip feeder is provided with a second E-shaped electromagnetic band gap structure; the complementary E-type electromagnetic bandgap structure comprises: the electromagnetic band gap structure comprises an outer E-shaped electromagnetic band gap structure and an inner E-shaped electromagnetic band gap structure, wherein an opening of the outer E-shaped electromagnetic band gap structure faces to the right, an opening of the inner E-shaped electromagnetic band gap structure faces to the left, and the outer E-shaped electromagnetic band gap structure surrounds the inner E-shaped electromagnetic band gap structure. The method solves the problems that in the prior art, a band-stop filter is needed to be adopted to inhibit the filtering of narrowband signals of 8 frequency bands in an ultra-wideband system, but the size, the manufacturing cost and the complexity of an antenna are increased by adopting the band-stop filter.
Description
Technical Field
The invention relates to the technical field of radio, in particular to an 8-notch ultra-wideband antenna structure with nested rectangular and E-shaped structures.
Background
In recent years, research on Ultra-Wideband (Ultra-Wideband) antennas has been receiving more and more attention, and particularly, after the FCC in 2002 prescribes the 3.1-10.6GHz band as a civil frequency band, an Ultra-Wideband antenna of the frequency band is developed, and the frequency band is then overlapped with some frequency bands of existing applications, such as WiMAX band uplink and downlink, INSAT band uplink and downlink, WLAN band uplink and downlink, and X band uplink and downlink, where electromagnetic interference may be generated by the Ultra-Wideband signals on these narrowband signal systems, so that in order to avoid the influence on the narrowband signal systems of these frequency bands at the same time, the narrowband signals of these frequency bands in the Ultra-Wideband system need to be filtered at the same time. To filter out these disturbances, rejection with a band reject filter is common, but the use of a band reject filter increases the size, cost and complexity of the antenna.
Disclosure of Invention
To address the above shortcomings and drawbacks of the prior art, a primary object of the present invention is to provide an 8-notch ultra-wideband antenna structure of nested rectangular and E-shaped configuration.
The technical scheme of the invention is as follows: an 8-notch ultra-wideband antenna structure of nested rectangular and E-shaped structure, comprising:
a dielectric substrate;
the metal grounding surface is covered on the lower surface of the dielectric substrate;
the radiation patch is covered on the upper surface of the medium substrate, the radiation patch is bilaterally symmetrical by taking the vertical central axis of the medium substrate as the central axis, the radiation patch is made of metal, a first rectangular open-loop resonator is arranged in the radiation patch, and a second rectangular open-loop resonator is arranged on the radiation patch in the first rectangular open-loop resonator;
the microstrip feeder is covered on the upper surface of the medium substrate, the upper end of the microstrip feeder is electrically connected with the radiation patch, the central axis of the microstrip feeder coincides with the vertical central axis of the medium substrate, the upper part and the lower part of the right side of the microstrip feeder are respectively provided with a complementary E-type electromagnetic band gap structure and a first E-type electromagnetic band gap structure, and the left side of the microstrip feeder is provided with a second E-type electromagnetic band gap structure;
the complementary E-type electromagnetic bandgap structure comprises: the electromagnetic band gap structure comprises an outer E-shaped electromagnetic band gap structure and an inner E-shaped electromagnetic band gap structure, wherein an opening of the outer E-shaped electromagnetic band gap structure faces to the right, an opening of the inner E-shaped electromagnetic band gap structure faces to the left, and the outer E-shaped electromagnetic band gap structure surrounds the inner E-shaped electromagnetic band gap structure.
Further, the radiation patch includes:
the upper rectangular patch has an upper and lower length of 10.4mm and a left and right length of 14mm, the first rectangular open-loop resonator is arranged in the upper rectangular patch, and the upper edge of the first rectangular open-loop resonator and the upper edge of the upper rectangular patch;
the upper edge of the second rectangular open-loop resonator is parallel to the upper edge of the upper rectangular patch.
Further, the radiation patch further includes:
the long side of the lower trapezoid patch is identical to the edge of the lower portion of the upper rectangular patch, the long side of the lower trapezoid patch is aligned with the edge of the lower portion of the upper rectangular patch and connected into a whole, the short side length of the lower trapezoid patch is 7mm, the height of the lower trapezoid patch is 5.6mm, and the upper end of the microstrip feed line is electrically connected with the edge of the lower portion of the lower trapezoid patch.
Further, the dielectric substrate is made of Roggers5880, and has the thickness of 0.8mm, the length of 36mm and the width of 32mm;
the width of the microstrip feeder is 2mm, the length is 20mm, and the resistance is 50Ω;
the total length of the first rectangular open-loop resonator is 34mm;
the total length of the second rectangular open-loop resonator is 32mm;
the total length of the upper branch, the connecting branch and the lower branch of the outer E-shaped electromagnetic band gap structure is 18.2mm, the middle branch of the outer E-shaped electromagnetic band gap structure is electrically connected with the metal grounding surface through a first metal column, the right end of the upper branch of the outer E-shaped electromagnetic band gap structure is integrally connected with a vertical downward drooping branch, the right end of the lower branch of the outer E-shaped electromagnetic band gap structure is integrally connected with a vertical downward upper drooping branch, the length of the drooping branch is 1.1mm, and the length of the upper drooping branch is 1.3mm;
the total length of the upper branch, the connecting branch and the lower branch of the inner E-shaped electromagnetic band gap structure is 11.4mm, and the middle branch of the inner E-shaped electromagnetic band gap structure is electrically connected with the metal grounding surface through a second metal column;
the opening of the first E-shaped electromagnetic band gap structure faces to the right, the total length of an upper branch, a connecting branch and a lower branch of the first E-shaped electromagnetic band gap structure is 15mm, and the first E-shaped electromagnetic band gap structure is electrically connected with the metal grounding surface through a third metal column;
the opening of the second E-shaped electromagnetic band gap structure faces to the left, the total length of an upper branch, a connecting branch and a lower branch of the second E-shaped electromagnetic band gap structure is 23.4mm, and the first E-shaped electromagnetic band gap structure is electrically connected with the metal grounding surface through a fourth metal column;
the diameters of the first metal column, the second metal column, the third metal column and the fourth metal column are 0.3mm.
Further, the upper branch and the lower branch of the outer E-shaped electromagnetic band gap structure have the same length;
the lengths of the upper branch and the lower branch of the inner E-type electromagnetic band gap structure are the same, the middle branch of the inner E-type electromagnetic band gap structure and the middle branch of the outer E-type electromagnetic band gap structure are on the same straight line, and the distance between the left end of the middle branch of the inner E-type electromagnetic band gap structure and the right end of the middle branch of the outer E-type electromagnetic band gap structure is 1.2mm;
the upper branch and the lower branch of the first E-type electromagnetic band gap structure have the same length;
the upper branch and the lower branch of the second E-type electromagnetic band gap structure have the same length.
Further, the length of the connecting branch of the outer E-type electromagnetic band gap structure is 6.2mm;
the length of the connecting branch of the inner E-type electromagnetic band gap structure is 4mm;
the length of the connecting branch of the first E-type electromagnetic band gap structure is 5mm;
the length of the connecting branch of the second E-type electromagnetic band gap structure is 8mm.
Further, the length of a middle branch of the outer E-shaped electromagnetic band gap structure is 1.5mm, and the distance between the first metal column and the microstrip feeder line is 1.88mm;
the length of the middle branch of the inner E-shaped electromagnetic band gap structure is 1.2mm, and the distance between the second metal column and the microstrip feeder is 4.21mm;
the length of the middle branch of the first E-type electromagnetic band gap structure is 2.6mm, and the distance between the third metal column and the microstrip feeder is 2.05mm;
the length of the middle branch of the second E-type electromagnetic band gap structure is 1.3mm, and the distance between the fourth metal column and the microstrip feeder line is 1.45mm.
Further, the distance between the outer E-shaped electromagnetic band gap structure and the microstrip feeder is 0.3mm;
the distance between the first E-type electromagnetic band gap structure and the microstrip feeder is 0.3mm;
the distance between the second E-type electromagnetic band gap structure and the microstrip feeder is 0.45mm.
Further, the first rectangular open-loop resonator has a slot width of 0.4mm;
the groove width of the second rectangular open-loop resonator is 0.2mm;
the branch width of the outer E-type electromagnetic band gap structure is 0.3mm;
the branch width of the inner E-type electromagnetic band gap structure is 0.3mm;
the branch width of the first E-type electromagnetic band gap structure is 0.3mm;
the branch width of the second E-type electromagnetic band gap structure is 0.3mm.
Further, the left-right distance between the second rectangular open-loop resonator and the first rectangular open-loop resonator is 0.1mm, the up-down distance between the second rectangular open-loop resonator and the first rectangular open-loop resonator is 0.6mm, the distance between the first E-type electromagnetic band gap structure and the lower edge of the dielectric substrate is 9.7mm, the distance between the complementary E-type electromagnetic band gap structure and the first E-type electromagnetic band gap structure is 5mm, and the distance between the second E-type electromagnetic band gap structure and the lower edge of the dielectric substrate is 3.5mm.
The beneficial effects of the invention are as follows: compared with the prior art, the invention has the following advantages:
1) The invention realizes 8 notches through the first rectangular open-loop resonator, the second rectangular open-loop resonator, the complementary E-type electromagnetic band gap structure, the first E-type electromagnetic band gap structure and the second E-type electromagnetic band gap structure, namely, the notch function can be realized on the narrowband signals of 8 frequency bands at the same time, and the radiation patch and the notch structure are printed on the dielectric substrate only through the printed circuit board process or the integrated circuit process, so that the invention has smaller size, low complexity and low manufacturing cost, is convenient to integrate into communication equipment;
2) By placing the complementary E-type electromagnetic band gap structure and the first E-type electromagnetic band gap structure on the right side of the microstrip feeder and placing the second E-type electromagnetic band gap structure on the left side of the microstrip feeder, the problem that the structure generated by placing all the electromagnetic band gap structures on one side is not compact enough is avoided, and the problem that the return loss S11< -10dB and the voltage standing wave ratio VSWR <2 of an antenna in a frequency band of 2.8GHz-12GHz are caused by mutual coupling between the electromagnetic band gap structures, so that the energy radiation efficiency of the frequency band of 2.8GHz-12GHz is not high is avoided.
Drawings
FIG. 1 is a perspective view of the present invention;
FIG. 2 is a graph of return loss simulated by HFSS15.0 software in accordance with the present invention;
FIG. 3 is a voltage standing wave ratio curve simulated by HFSS15.0 software according to the present invention.
Detailed Description
The invention will be further described with reference to the accompanying drawings and specific examples:
implementation example 1: referring to fig. 1, an 8-notch ultra-wideband antenna structure of nested rectangular and E-shaped structure, comprising: a dielectric substrate 4; a metal grounding surface 5, wherein the metal grounding surface 5 covers the lower surface of the dielectric substrate 4; the radiation patch 1 is covered on the upper surface of the dielectric substrate 4, the radiation patch 1 is bilaterally symmetrical by taking the vertical central axis of the dielectric substrate 4 as the central axis, the radiation patch 1 is made of metal, a first rectangular open-loop resonator 2 is arranged in the radiation patch 1, and a second rectangular open-loop resonator 3 is arranged on the radiation patch 1 in the first rectangular open-loop resonator 2; the microstrip feeder 11 is covered on the upper surface of the dielectric substrate 4, the upper end of the microstrip feeder 11 is electrically connected with the radiation patch 1, the central axis of the microstrip feeder 11 coincides with the vertical central axis of the dielectric substrate 4, the upper part and the lower part of the right side of the microstrip feeder 11 are respectively provided with a complementary E-type electromagnetic band gap structure 6 and a first E-type electromagnetic band gap structure 9, and the left side of the microstrip feeder 11 is provided with a second E-type electromagnetic band gap structure 12; the complementary E-type electromagnetic bandgap structure 6 comprises: an outer E-type electromagnetic bandgap structure 601 and an inner E-type electromagnetic bandgap structure 602, the outer E-type electromagnetic bandgap structure 601 opening to the right and the inner E-type electromagnetic bandgap structure 602 opening to the left, the outer E-type electromagnetic bandgap structure 601 surrounding the inner E-type electromagnetic bandgap structure 602.
The radiation patch 1 is a sheet made of metal, the first rectangular open-loop resonator 2 and the second rectangular open-loop resonator 3 are rectangular open-grooves formed in the radiation patch 1, the rectangular open-grooves are open-loops, and two ends of each rectangular open-groove are not communicated. The complementary E-type electromagnetic bandgap structure 6, the first E-type electromagnetic bandgap structure 9 and the second E-type electromagnetic bandgap structure 12 are thin sheets of metal material. The metal ground plane 5 is a thin sheet of metal material. The microstrip feed line 11 is a thin sheet of metal material. The invention is obtained by etching on the dielectric substrate 4 by using a printed circuit board process or an integrated circuit process.
The length of each open-loop resonator and each E-type electromagnetic bandgap structure is determined by the following equation:
wherein c is the speed of light, f notch For notch center frequency ε reff Epsilon is the effective dielectric constant r Is the dielectric constant of the substrate, h is the thickness of the substrate, ω f The microstrip line width is L, and the length of each open-loop resonator or each type of U-shaped parasitic band is L.
The first rectangular open-loop resonator 2, the second rectangular open-loop resonator 3, the complementary E-type electromagnetic band gap structure 6, the first E-type electromagnetic band gap structure and the second E-type electromagnetic band gap structure realize 8 notches, namely, the notch function can be realized on the narrowband signals of 8 frequency bands at the same time, and the radiation patch and the notch structure are printed on the dielectric substrate 4 only through a printed circuit board process or an integrated circuit process, so that the invention has small size, low complexity and low manufacturing cost, is convenient to integrate into communication equipment; by placing the complementary E-type electromagnetic band gap structure 6 and the first E-type electromagnetic band gap structure 9 on the right side of the microstrip feeder and placing the second E-type electromagnetic band gap structure 12 on the left side of the microstrip feeder 11, the problem that the structure generated by placing all the electromagnetic band gap structures on one side is not compact enough is avoided, and the problem that the mutual coupling between the electromagnetic band gap structures causes the return loss S11< -10dB of the antenna in the frequency band of 2.8GHz-12GHz and the problem that the voltage standing wave ratio VSWR <2 is avoided, so that the energy radiation efficiency in the frequency band of 2.8GHz-12GHz is not high is avoided.
Further, the radiation patch 1 includes: an upper rectangular patch 101, wherein the upper and lower lengths of the upper rectangular patch 101 are 10.4mm, the left and right lengths of the upper rectangular patch 101 are 14mm, the first rectangular open-loop resonator 2 is arranged in the upper rectangular patch 101, and the upper edge of the first rectangular open-loop resonator 2 is connected with the upper edge of the upper rectangular patch 101; the upper edge of the second rectangular open-loop resonator 3 is parallel to the upper edge of the upper rectangular patch 101.
The upper rectangular patch 101 has the effects that the upper rectangular patch 101 and the first rectangular open-loop resonator 2 are rectangular, the open-loop resonators with different shapes are obtained by simulating HFSS15.0, and when the shapes are similar, the first rectangular open-loop resonator 2 can generate strong resonance to a specific frequency band, so that the return loss of a frequency band corresponding to the first rectangular open-loop resonator 2 is increased, the voltage standing wave ratio is increased, and the notch characteristic to the corresponding frequency band is enhanced. The second rectangular open-loop resonator 3 is rectangular in the same way, so that the return loss of the frequency band corresponding to the second rectangular open-loop resonator 3 is increased, the voltage standing wave ratio is increased, and the notch characteristic of the corresponding frequency band is enhanced.
Further, the radiation patch 1 further includes: the long side of the lower trapezoid patch 102 is the same as the lower edge of the upper rectangular patch 101, the long side of the lower trapezoid patch 102 is aligned with the lower edge of the upper rectangular patch 101 and is connected into a whole, the short side of the lower trapezoid patch 102 is 7mm, the height of the lower trapezoid patch 102 is 5.6mm, and the upper end of the microstrip feeder 11 is electrically connected with the lower edge of the lower trapezoid patch 102.
The lower trapezoidal patch 102 plays a role in widening the total frequency band of the antenna, and can be obtained through HFSS15.0 simulation, the total bandwidth of the antenna can change under the conditions of the lower trapezoidal patch 102 and the condition of no lower trapezoidal patch 102, the bandwidth of the antenna is wider under the condition of the lower trapezoidal patch 102, and the bandwidth of the antenna is smaller under the condition of no lower trapezoidal patch 102.
Further, the dielectric substrate 4 is made of a rogers 5880, and has a thickness of 0.8mm, a length of 36mm and a width of 32mm; the width of the microstrip feeder line 11 is 2mm, the length is 20mm, and the resistance is 50Ω; the total length of the first rectangular open-loop resonator 2 is 34mm; the total length of the second rectangular open-loop resonator 3 is 32mm; the total length of the upper branch, the connecting branch and the lower branch of the outer E-shaped electromagnetic band gap structure 601 is 18.2mm, the middle branch of the outer E-shaped electromagnetic band gap structure 601 is electrically connected with the metal ground plane 5 through the first metal column 8, the right end of the upper branch of the outer E-shaped electromagnetic band gap structure 601 is integrally connected with the vertically downward lower branch, the right end of the lower branch of the outer E-shaped electromagnetic band gap structure 601 is integrally connected with the vertically downward upper branch, the length of the lower branch is 1.1mm, and the length of the upper branch is 1.3mm; the total length of the upper branch, the connecting branch and the lower branch of the inner E-shaped electromagnetic band gap structure 602 is 11.4mm, and the middle branch of the inner E-shaped electromagnetic band gap structure 602 is electrically connected with the metal grounding surface 5 through the second metal column 7; the opening of the first E-shaped electromagnetic band gap structure 9 faces to the right, the total length of an upper branch, a connecting branch and a lower branch of the first E-shaped electromagnetic band gap structure 9 is 15mm, and the first E-shaped electromagnetic band gap structure 9 is electrically connected with the metal ground plane 5 through a third metal column 10; the opening of the second E-type electromagnetic band gap structure 12 faces to the left, the total length of an upper branch, a connecting branch and a lower branch of the second E-type electromagnetic band gap structure 12 is 23.4mm, and the first E-type electromagnetic band gap structure 9 is electrically connected with the metal ground plane 5 through a fourth metal column 13; the diameters of the first metal column 8, the second metal column 7, the third metal column 10 and the fourth metal column 13 were 0.3mm.
The functions are:
1) The antenna can generate a notch effect on frequency bands of 3.50-3.54GHz, 3.80-4.11GHz, 4.17-4.28GHz, 4.46-4.72GHz, 4.89-5.13GHz, 5.51-5.83GHz, 5.87-6.74GHz and 8.08-8.82 GHz;
2) The upper hanging branch vertically extends upwards by 1.3mm, the lower hanging branch vertically extends downwards by 1.1mm, the electromagnetic coupling between the outer E-type electromagnetic band gap structure 601 and the inner E-type electromagnetic band gap structure 602 can be enhanced, corresponding notch (namely, the return loss S11 of narrow-band frequency to be filtered is increased, the voltage standing wave ratio VSWR is increased, the notch effect on the corresponding frequency is improved, the whole structure of the antenna is more compact, the upper hanging branch and the lower hanging branch with different lengths and different extending directions are simulated through HFSS15.0, the upper hanging branch vertically extends upwards by 1.3mm, and the lower hanging branch vertically extends downwards, so that the notch effect on the corresponding frequency of 1.1mm is the best;
3) The first metal column 8, the second metal column 7, the third metal column 10 and the fourth metal column 13 make the notch generated by other notch structures branched, so that the total notch number of the antenna is 8;
4) The diameters of the first metal pillar 8, the second metal pillar 7, the third metal pillar 10 and the fourth metal pillar 13 are set to be 0.3mm, so that the return loss S11 and the voltage standing wave ratio VSWR of the notch frequency (namely, the narrow-band frequency to be filtered) of the metal pillar fork are increased, the return loss S11< -10db is met except for other parts of the notch frequency, and the requirement of the voltage standing wave ratio VSWR <2 is met, so that the notch effect of the corresponding frequency and the radiation efficiency of the frequencies except for the notch frequency are improved.
Further, the upper branch and the lower branch of the outer E-type electromagnetic bandgap structure 601 have the same length; the lengths of the upper branch and the lower branch of the inner E-shaped electromagnetic band gap structure 602 are the same, the middle branch of the inner E-shaped electromagnetic band gap structure 602 and the middle branch of the outer E-shaped electromagnetic band gap structure 601 are on the same straight line, and the space between the left end of the middle branch of the inner E-shaped electromagnetic band gap structure 602 and the right end of the middle branch of the outer E-shaped electromagnetic band gap structure 601 is 1.2mm; the upper branch and the lower branch of the first E-type electromagnetic band gap structure 9 have the same length; the upper branch and the lower branch of the second E-type electromagnetic band gap structure 12 have the same length.
The effects are that:
1) Simulation is carried out on upper branches and lower branches with different lengths through HFSS15.0, and when the upper branches and the lower branches of the E-type electromagnetic band gap structure are the same in length, the electromagnetic coupling of the E-type electromagnetic band gap structure to other notch structures is minimum;
2) The HFSS15.0 simulates the left end of the middle branch of the different E-type electromagnetic bandgap structure 602 and the right end of the middle branch of the outer E-type electromagnetic bandgap structure 601, when the left end of the middle branch of the inner E-type electromagnetic bandgap structure 602 and the right end of the middle branch of the outer E-type electromagnetic bandgap structure 601 are set to be 1.2mm, the phases of the surface currents on the left end of the middle branch of the inner E-type electromagnetic bandgap structure 602 and the outer E-type electromagnetic bandgap structure 601 are opposite, a phase offset effect is generated, a notch characteristic is generated for the corresponding frequency, the return loss S11 of the corresponding notch frequency (namely the narrow-band frequency to be filtered) is increased, the voltage standing wave ratio VSWR is increased, and the notch effect for the corresponding frequency is improved.
Further, the length of the connecting branch of the outer E-type electromagnetic bandgap structure 601 is 6.2mm; the length of the connecting branch of the inner E-shaped electromagnetic band gap structure 602 is 4mm; the length of the connecting branch of the first E-type electromagnetic band gap structure 9 is 5mm; the length of the connecting branch of the second E-type electromagnetic band gap structure 12 is 8mm.
The functions are:
simulation is carried out on different connecting branch lengths through HFSS15.0, and under the connecting branch lengths, the return loss S11 of the frequency band of the 2.8GHz-12GHz frequency band except the corresponding notch frequency (namely the narrow-band frequency to be filtered) is minimum, and the voltage standing wave ratio VSWR is minimum.
Further, the length of the middle branch of the outer E-shaped electromagnetic band gap structure 601 is 1.5mm, and the distance between the first metal column 8 and the microstrip feeder line 11 is 1.88mm; the length of the middle branch of the inner E-shaped electromagnetic band gap structure 602 is 1.2mm, and the distance between the second metal column 7 and the microstrip feeder line 11 is 4.21mm; the length of the middle branch of the first E-type electromagnetic band gap structure 9 is 2.6mm, and the distance between the third metal column 10 and the microstrip feeder line 11 is 2.05mm; the length of the middle branch of the second E-shaped electromagnetic band gap structure 12 is 1.3mm, and the distance between the fourth metal column 13 and the microstrip feeder line 11 is 1.45mm. .
The effects are that:
the different middle branch lengths are simulated through HFSS15.0, so that the frequency band of the corresponding notch frequency (namely, the narrow-band frequency to be filtered) is widened under the conditions that the return loss S11> -5db and the voltage standing wave ratio VSWR >9 of the corresponding notch frequency (namely, the narrow-band frequency to be filtered) and the return loss S11< -10db and the voltage standing wave ratio VSWR <2 of the frequency band of the 2.8GHz-12GHz except the corresponding notch frequency (namely, the narrow-band frequency to be filtered) are ensured.
Further, the distance between the outer E-shaped electromagnetic band gap structure 601 and the microstrip feeder 11 is 0.3mm; the distance between the first E-type electromagnetic band gap structure 9 and the microstrip feeder line 11 is 0.3mm; the distance between the second E-type electromagnetic band gap structure 12 and the microstrip feed line 11 is 0.45mm.
The effects are that:
the different distances between the E-type electromagnetic band gap structure and the microstrip feeder 11 are obtained by simulation through HFSS15.0, the return loss S11> -5db and the voltage standing wave ratio VSWR >9 of the notches generated by the complementary E-type electromagnetic band gap structure 6, the first E-type electromagnetic band gap structure 9 and the second E-type electromagnetic band gap structure 12 can be ensured under the parameters, and the coupling among the notch structures is minimum.
Further, the slot width of the first rectangular open-loop resonator 2 is 0.4mm; the groove width of the second rectangular open-loop resonator 3 is 0.2mm; the branch width of the outer E-shaped electromagnetic band gap structure 601 is 0.3mm; the branches of the inner E-type electromagnetic bandgap structure 602 are 0.3mm wide; the branch width of the first E-type electromagnetic band gap structure 9 is 0.3mm; the second E-type electromagnetic bandgap structure 12 has a branch width of 0.3mm.
The effects are that:
the simulation of different branch widths of the E-type electromagnetic band gap structure through HFSS15.0 can enable the notch band widths generated by the notch structures to be wide enough but not too close to each other under the parameters, and the return loss S11< -10db and the voltage standing wave ratio VSWR <2 of the frequency band of the 2.8GHz-12GHz except the corresponding notch frequency (namely the narrow band frequency needing filtering).
Further, the left-right distance between the second rectangular open-loop resonator 3 and the first rectangular open-loop resonator 2 is 0.1mm, the up-down distance between the second rectangular open-loop resonator 3 and the first rectangular open-loop resonator 2 is 0.6mm, the distance between the first E-type electromagnetic band gap structure 9 and the lower edge of the dielectric substrate 4 is 2mm, the distance between the complementary E-type electromagnetic band gap structure 6 and the first E-type electromagnetic band gap structure 9 is 5mm, and the distance between the second E-type electromagnetic band gap structure 12 and the lower edge of the dielectric substrate 4 is 3.5mm.
The coupling between the notch structures is minimized, and in addition, as the antenna may be provided with conductors at the positions, in order to avoid coupling between the first E-type electromagnetic bandgap structure 9 and the second E-type electromagnetic bandgap structure 12 and the conductors which are too close to each other, the distance between the first E-type electromagnetic bandgap structure and the lower edge of the dielectric substrate 45 is set so as to minimize the coupling between the antenna and the nearby conductors under the condition that the impedance matching and the size are sufficiently small.
In order to verify the design effect of the antenna, HFSS15.0 simulation is adopted, FIG. 2 is a return loss curve of the antenna structure obtained through HFSS15.0 simulation, FIG. 3 is a voltage standing wave ratio curve of the antenna obtained through HFSS15.0 simulation, and from the graph, it can be seen that the return loss S11< -10dB of the antenna in the frequency range of 2.8GHz-12GHz is less than-10 dB, and the voltage standing wave ratio VSWR is less than 2, and the frequency range of 3.1 GHz-10.6 GHz is covered. The return loss S11> -5dB and the voltage standing wave ratio VSWR >9 of the antenna in the frequency bands of 3.50-3.54GHz, 3.80-4.11GHz, 4.17-4.28GHz, 4.46-4.72GHz, 4.89-5.13GHz, 5.51-5.83GHz, 5.87-6.74GHz and 8.08-8.82GHz show that a large amount of energy in the frequency bands cannot be radiated outwards, and the antenna has obvious notch characteristics and can effectively inhibit the 8 frequency bands.
The notch structure in the present invention is a generic term for the first rectangular open-loop resonator 2, the second rectangular open-loop resonator 3, the complementary E-type electromagnetic bandgap structure 6, the first E-type electromagnetic bandgap structure 9, and the second E-type electromagnetic bandgap structure 12.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments described. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the invention, and these should be considered to be within the scope of the invention.
Claims (7)
1. An 8-notch ultra-wideband antenna structure of nested rectangular and E-shaped structure, comprising:
a dielectric substrate (4);
a metal grounding surface (5), wherein the metal grounding surface (5) is covered on the lower surface of the dielectric substrate (4);
the radiation patch (1) is covered on the upper surface of the dielectric substrate (4), the radiation patch (1) is bilaterally symmetrical by taking the vertical central axis of the dielectric substrate (4) as the central axis, the radiation patch (1) is made of metal, a first rectangular open-loop resonator (2) is arranged in the radiation patch (1), and a second rectangular open-loop resonator (3) is arranged on the radiation patch (1) in the first rectangular open-loop resonator (2);
the microstrip feeder (11), microstrip feeder (11) cover on the upper surface of dielectric substrate (4), microstrip feeder (11) upper end and radiate patch (1) electricity to be connected, microstrip feeder (11) axis and vertical axis coincidence of dielectric substrate (4), microstrip feeder (11) upper portion and lower part on the right side are equipped with complementary E type electromagnetic band gap structure (6) and first E type electromagnetic band gap structure (9) respectively, microstrip feeder (11) left side is equipped with second E type electromagnetic band gap structure (12);
the complementary E-type electromagnetic bandgap structure (6) comprises: an outer E-type electromagnetic band gap structure (601) and an inner E-type electromagnetic band gap structure (602), wherein the outer E-type electromagnetic band gap structure (601) is opened to the right, the inner E-type electromagnetic band gap structure (602) is opened to the left, and the outer E-type electromagnetic band gap structure (601) surrounds the inner E-type electromagnetic band gap structure (602);
the radiation patch (1) comprises:
the upper rectangular patch (101), the upper length of the upper rectangular patch (101) is 10.4mm, the left and right lengths of the upper rectangular patch (101) are 14mm, the first rectangular open-loop resonator (2) is arranged in the upper rectangular patch (101), and the upper edge of the first rectangular open-loop resonator (2) is parallel to the upper edge of the upper rectangular patch (101);
the upper edge of the second rectangular open-loop resonator (3) is parallel to the upper edge of the upper rectangular patch (101);
the radiation patch (1) further comprises:
the lower trapezoid patch (102), the long side of the lower trapezoid patch (102) is the same as the lower edge of the upper rectangular patch (101), the long side of the lower trapezoid patch (102) is aligned with the lower edge of the upper rectangular patch (101) and connected into a whole, the short side of the lower trapezoid patch (102) is 7mm, the height of the lower trapezoid patch (102) is 5.6mm, and the upper end of the microstrip feeder line (11) is electrically connected with the lower edge of the lower trapezoid patch (102);
the dielectric substrate (4) is made of Roggers5880, and has the thickness of 0.8mm, the length of 36mm and the width of 32mm;
the width of the microstrip feeder line (11) is 2mm, the length is 20mm, and the resistance is 50Ω;
the total length of the first rectangular open-loop resonator (2) is 34mm;
the total length of the second rectangular open-loop resonator (3) is 32mm;
the total length of an upper branch, a connecting branch and a lower branch of the outer E-shaped electromagnetic band gap structure (601) is 18.2mm, a middle branch of the outer E-shaped electromagnetic band gap structure (601) is electrically connected with a metal ground plane (5) through a first metal column (8), the right end of the upper branch of the outer E-shaped electromagnetic band gap structure (601) is integrally connected with a vertical downward lower branch, the right end of the lower branch of the outer E-shaped electromagnetic band gap structure (601) is integrally connected with a vertical downward upper branch, the length of the lower branch is 1.1mm, and the length of the upper branch is 1.3mm;
the total length of an upper branch, a connecting branch and a lower branch of the inner E-shaped electromagnetic band gap structure (602) is 11.4mm, and a middle branch of the inner E-shaped electromagnetic band gap structure (602) is electrically connected with the metal grounding surface (5) through a second metal column (7);
the opening of the first E-shaped electromagnetic band gap structure (9) faces to the right, the total length of an upper branch, a connecting branch and a lower branch of the first E-shaped electromagnetic band gap structure (9) is 15mm, and the first E-shaped electromagnetic band gap structure (9) is electrically connected with the metal grounding surface (5) through a third metal column (10);
the opening of the second E-shaped electromagnetic band gap structure (12) faces to the left, the total length of an upper branch, a connecting branch and a lower branch of the second E-shaped electromagnetic band gap structure (12) is 23.4mm, and the first E-shaped electromagnetic band gap structure (9) is electrically connected with the metal grounding surface (5) through a fourth metal column (13);
the diameters of the first metal column (8), the second metal column (7), the third metal column (10) and the fourth metal column (13) are 0.3mm.
2. The nested rectangular and E-shaped structured 8-notch ultra-wideband antenna structure of claim 1, wherein,
the upper branch and the lower branch of the outer E-shaped electromagnetic band gap structure (601) have the same length;
the lengths of the upper branch and the lower branch of the inner E-shaped electromagnetic band gap structure (602) are the same, the middle branch of the inner E-shaped electromagnetic band gap structure (602) and the middle branch of the outer E-shaped electromagnetic band gap structure (601) are on the same straight line, and the distance between the left end of the middle branch of the inner E-shaped electromagnetic band gap structure (602) and the right end of the middle branch of the outer E-shaped electromagnetic band gap structure (601) is 1.2mm;
the upper branch and the lower branch of the first E-type electromagnetic band gap structure (9) have the same length;
the upper branch and the lower branch of the second E-type electromagnetic band gap structure (12) have the same length.
3. The nested rectangular and E-shaped structured 8-notch ultra-wideband antenna structure of claim 2, wherein,
the length of the connecting branch of the outer E-shaped electromagnetic band gap structure (601) is 6.2mm;
the length of a connecting branch of the inner E-shaped electromagnetic band gap structure (602) is 4mm;
the length of a connecting branch of the first E-type electromagnetic band gap structure (9) is 5mm;
the length of the connecting branch of the second E-type electromagnetic band gap structure (12) is 8mm.
4. An 8-notch ultra-wideband antenna structure of nested rectangular and E-shaped structure as claimed in claim 3, wherein,
the length of a middle branch of the outer E-shaped electromagnetic band gap structure (601) is 1.5mm, and the distance between the first metal column (8) and the microstrip feeder line (11) is 1.88mm;
the length of a middle branch of the inner E-shaped electromagnetic band gap structure (602) is 1.2mm, and the distance between the second metal column (7) and the microstrip feeder line (11) is 4.21mm;
the length of a middle branch of the first E-type electromagnetic band gap structure (9) is 2.6mm, and the distance between the third metal column (10) and the microstrip feeder line (11) is 2.05mm;
the length of the middle branch of the second E-type electromagnetic band gap structure (12) is 1.3mm, and the distance between the fourth metal column (13) and the microstrip feeder line (11) is 1.45mm.
5. The nested rectangular and E-shaped structured 8-notch ultra-wideband antenna structure of claim 4, wherein,
the distance between the outer E-shaped electromagnetic band gap structure (601) and the microstrip feeder line (11) is 0.3mm;
the distance between the first E-type electromagnetic band gap structure (9) and the microstrip feeder line (11) is 0.3;
the distance between the second E-type electromagnetic band gap structure (12) and the microstrip feeder (11) is 0.45mm.
6. The nested rectangular and E-shaped structured 8-notch ultra-wideband antenna structure of claim 5, wherein,
the groove width of the first rectangular open-loop resonator (2) is 0.4mm;
the groove width of the second rectangular open-loop resonator (3) is 0.2mm;
the branch width of the outer E-shaped electromagnetic band gap structure (601) is 0.3mm;
the branch width of the inner E-shaped electromagnetic band gap structure (602) is 0.3mm;
the branch width of the first E-type electromagnetic band gap structure (9) is 0.3mm;
the second E-type electromagnetic band gap structure (12) has a branch width of 0.3mm.
7. The nested rectangular and E-shaped structured 8-notch ultra-wideband antenna structure of claim 6, wherein,
the left-right distance between the second rectangular open-loop resonator (3) and the first rectangular open-loop resonator (2) is 0.1mm, the up-down distance between the second rectangular open-loop resonator (3) and the first rectangular open-loop resonator (2) is 0.6mm, the distance between the first E-type electromagnetic band gap structure (9) and the lower edge of the dielectric substrate (4) is 2mm, the distance between the complementary E-type electromagnetic band gap structure (6) and the first E-type electromagnetic band gap structure (9) is 5mm, and the distance between the second E-type electromagnetic band gap structure (12) and the lower edge of the dielectric substrate (4) is 3.5mm.
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