CN110870946B - Device for stimulating the nucleus pulposus and/or the posterior bundle of the brain - Google Patents
Device for stimulating the nucleus pulposus and/or the posterior bundle of the brain Download PDFInfo
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Classifications
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N1/00—Electrotherapy; Circuits therefor
- A61N1/18—Applying electric currents by contact electrodes
- A61N1/32—Applying electric currents by contact electrodes alternating or intermittent currents
- A61N1/36—Applying electric currents by contact electrodes alternating or intermittent currents for stimulation
- A61N1/3605—Implantable neurostimulators for stimulating central or peripheral nerve system
- A61N1/3606—Implantable neurostimulators for stimulating central or peripheral nerve system adapted for a particular treatment
- A61N1/36082—Cognitive or psychiatric applications, e.g. dementia or Alzheimer's disease
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N1/00—Electrotherapy; Circuits therefor
- A61N1/02—Details
- A61N1/04—Electrodes
- A61N1/05—Electrodes for implantation or insertion into the body, e.g. heart electrode
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- A61N1/0529—Electrodes for brain stimulation
- A61N1/0534—Electrodes for deep brain stimulation
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N1/00—Electrotherapy; Circuits therefor
- A61N1/18—Applying electric currents by contact electrodes
- A61N1/32—Applying electric currents by contact electrodes alternating or intermittent currents
- A61N1/36—Applying electric currents by contact electrodes alternating or intermittent currents for stimulation
- A61N1/3605—Implantable neurostimulators for stimulating central or peripheral nerve system
- A61N1/36125—Details of circuitry or electric components
Abstract
The invention provides a device and a method for stimulating the brain nugget and/or medullary vein and/or retroflexed bundle, which are used for treating mental diseases. The method comprises placing at least one electrode in at least one side of the nucleus and/or any part of the medullary and/or retroflexion tract, the electrode having at least one contact in the region, the electrode being connected to at least one lead, the terminal lead being connected to a pulse generator, the electrode being capable of delivering a stimulation signal parallel to the axon to the region, the pulse generator delivering the stimulation signal through the lead to any contact of the electrode, the electrode portion in the region modulating its neural activity. The invention realizes the stimulation of at least one electrode to the rein and/or the upstream and downstream fiber bundles thereof, and realizes the feasibility of using the deep brain stimulation system to treat mental diseases such as depression, addiction behaviors and the like.
Description
Technical Field
The invention relates to a device for stimulating rein and/or medullary vein and/or retroflexion bundle by a deep brain stimulation system, belonging to the technical field of implanted medical systems.
Background
The electrical activity of the re-nuclear neurons is closely related to mental diseases such as depression, addictive behaviors, obsessive-compulsive disorder and the like.
Neuropsychiatric diseases have become the first disease in the world and are in an increasing year-by-year situation with heavy social and family burden. For example, depression has become the world's second largest disorder, with prevalence of up to 14.6% in developed countries and 11.1% in undeveloped countries, severely jeopardizing public physical and mental health.
Implantable deep brain stimulation systems have been developed for the treatment of a variety of diseases, such as parkinson's disease, dystonia, essential tremor, etc., with good results. The implanted deep brain stimulation system mainly comprises a pulse generator implanted in a human body, an electrode and an external control device. The electrodes are connected with the pulse generator, and the pulses generated by the pulse generator are transmitted to the specific nerve parts to generate electric stimulation, so that the normal human body functions of the corresponding parts are recovered. In recent years, this technology has become one of new therapies for refractory psychotic patients. With the wide development of deep brain electrical stimulation therapy, effective target regulation has become a key for treatment, which is closely related to the treatment effect and stability of postoperative diseases.
Target tissue sites employed in the prior art for treatment of psychotic disorders using implantable deep brain stimulation systems include stimulation targets including nucleus accumbens (Nucleus Accumbens, NAcc), ventral vesicles/ventral striatum (Ventral Capsule/Ventral Striatum), medial vesicles/striped nucleus of THE STRIA TERMINALIS (IC/BST), and the like. Experiments prove that the anti-depression effect can be obtained by stimulating the parts, but the effect is not ideal enough, and the experimental results are relatively dispersed and cannot be clinically applied.
Disclosure of Invention
The invention aims to provide a device and a method for treating mental diseases such as depression and addiction behaviors through deep brain stimulation.
The technical scheme of the invention is as follows.
According to a first aspect, the present invention provides a method for treating mental disorders using an implantable deep brain stimulation system including electrodes, leads and a pulse generator to stimulate the nucleus of a brain (Hb), the method comprising:
Step S101: placing at least one electrode in at least one side of the reins, so that at least one contact of the electrode is in the reins area; the electrode can transmit a stimulation signal parallel to the axon to the reins;
step S102: connecting the electrodes to at least one wire and connecting the wire ends to a pulse generator;
Step S103: generating a stimulation signal using a pulse generator and delivering the stimulation signal to contacts of the electrodes via wires;
Step S104: the neural activity of the electrode is regulated by the portion of the electrode within the reins nucleus.
Preferably, the implanted deep brain stimulation system is capable of stimulating one or both lateral or lateral nuceles.
Preferably, the area where the implanted deep brain stimulation system is capable of modulating the activity of any lateral reins nerve comprises the inside of the lateral part of the reins.
Preferably, one or more of the contacts of the electrode is configured as a cathode.
Preferably, any one or more of the contacts of the electrode is configured as an anode.
Preferably, the voltage of the stimulation signal output by the pulse generator is between 0.1 and 10v, the pulse width is between 10 and 450 mu s, and the frequency is between 2 and 20 kHz. In a more preferred embodiment, the frequency is between 50 and 200 Hz.
Preferably, the frequency of the stimulation signal output by the pulse generator is modulated in at least one cyclic pattern.
According to a second aspect, the present invention provides a method for treating a psychotic disorder using an implantable deep brain stimulation system including electrodes, leads and pulse generators to stimulate the fibrous bundle medullary vein (SMT) upstream of the nucelus in the brain, the method comprising:
step S201: placing at least one electrode at any position along the medullary line; the electrodes are capable of delivering a stimulation signal parallel to the fiber bundle to the medullary canal;
Step S202: connecting the electrodes to at least one wire and connecting the wire ends to a pulse generator;
step S203: generating a stimulation signal using a pulse generator and delivering the stimulation signal to any contact of the electrode via a wire;
step S204: the neural activity is regulated by the electrode portion in the vicinity of the medullary vein.
Preferably, the implantable deep brain stimulation system is capable of stimulating one-sided and/or two-sided medullary areas.
Preferably, in the step S201, at least one electrode is placed on one side of the medullary canal.
Preferably, in the step S204, the implanted deep brain stimulation system can regulate the active area of any lateral medullary nerve, and finally achieve the purpose of regulating and controlling the rein.
Preferably, any one or more of the contacts of the electrode is configured as a cathode.
Preferably, any one or more of the contacts of the electrode is configured as an anode.
Preferably, the voltage of the stimulation signal generated by the pulse generator is between 0.1 and 10v, the pulse width is between 10 and 450 mu s, and the frequency is between 2 and 20 kHz. In a more preferred embodiment, the frequency is between 50 and 200 Hz.
Preferably, the frequency of the stimulation signal output by the pulse generator is modulated in at least one cyclic pattern.
According to a third aspect, the present invention provides a method of treating a psychotic disorder with post-bundle Qu Shu (FR) following stimulation of the nucleus subluxus in the brain with an implantable deep brain stimulation system comprising electrodes, leads and a pulse generator, the method comprising:
step S301: at least one electrode is placed at any position along the backward bending beam; the electrode is capable of delivering a stimulation signal parallel to the fiber bundle to the retroflexion bundle;
step S302: connecting the electrodes to at least one wire and connecting the wire ends to a pulse generator;
Step S303: generating a stimulation signal using a pulse generator and delivering the stimulation signal to any contact of the electrode via a wire;
Step S304: the neural activity is regulated by the electrode portion near the posterior bundle.
Preferably, the implantable deep brain stimulation system is capable of stimulating one-sided and/or two-sided posterior straying areas.
Preferably, in the step S301, at least one electrode is placed in one posterior bundle.
Preferably, the implantable deep brain stimulation system is capable of modulating regions of arbitrary lateral postflexion nerve activity.
Preferably, any one or more of the contacts of the electrode is configured as a cathode.
Preferably, any one or more of the contacts of the electrode is configured as an anode.
Preferably, the voltage of the stimulation signal emitted by the pulse generator is between 0.1 and 10v, the pulse width is between 10 and 450 mu s, and the frequency is between 2 and 20 kHz. In a more preferred embodiment, the frequency is between 50 and 200 Hz.
Preferably, the frequency of the stimulation signal output by the pulse generator is modulated in at least one cyclic pattern.
The present invention also provides an implantable deep brain stimulation system for stimulating the nucleus pulposus (Hb) within the brain to treat psychotic disorders, the implantable deep brain stimulation system comprising electrodes, leads and a pulse generator, wherein:
at least one of said electrodes being adapted to be placed in at least one side of the reins with at least one contact of said electrode in said reins region; the electrode can transmit a stimulation signal parallel to the axon to the reins;
The electrode is connected to at least one wire and connects the wire end to the pulse generator;
the pulse generator is able to generate a stimulation signal and to transmit it through the wire to the contacts of the electrode, modulating its neural activity through the portion of said electrode inside the reins.
Preferably, the implanted deep brain stimulation system is capable of stimulating one or both lateral or lateral nuceles.
Preferably, the area where the implanted deep brain stimulation system is capable of modulating the activity of any lateral reins nerve comprises the inside of the lateral part of the reins.
Preferably, one or more of the contacts of the electrode is configured as a cathode.
The invention also provides an implantable deep brain stimulation system for stimulating the upstream fiber bundle medullary vein (SMT) of the nucelus in the brain to treat mental diseases, the implantable deep brain stimulation system comprising an electrode, a lead and a pulse generator, wherein:
at least one of the electrodes is adapted to be placed at any location along the medullary track; the electrodes are capable of delivering a stimulation signal parallel to the fiber bundle to the medullary canal;
The electrodes are connected to at least one wire, and the ends of the wire are connected to a pulse generator;
the pulse generator is capable of generating a stimulation signal and delivering it via a wire to any contact of the electrode, modulating its neural activity via the electrode portion in the vicinity of the medullary canal.
Preferably, the implantable deep brain stimulation system is capable of stimulating one-sided and/or two-sided medullary areas.
Preferably, the at least one electrode is adapted to be placed on one side of the medullary canal.
The invention also provides an implantable deep brain stimulation system for stimulating post-bundle Qu Shu (FR) of the sublevel nucleus in the brain to treat psychotic disorders, the implantable deep brain stimulation system comprising electrodes, leads and a pulse generator, wherein:
at least one of the electrodes is adapted to be placed at any location along the posterior flexor beam; the electrode is capable of delivering a stimulation signal parallel to the fiber bundle to the retroflexion bundle;
The electrodes are connected to at least one wire, and the ends of the wire are connected to the pulse generator;
the pulser can generate a stimulation signal and deliver it via wires to any contacts of the electrodes, modulating its neural activity via the electrode portion near the posterior bundle.
Preferably, the implantable deep brain stimulation system is capable of stimulating one-sided and/or two-sided posterior straying areas.
Preferably, the at least one electrode is adapted to be placed on one side for posterior buckling.
Preferably, the implantable deep brain stimulation system is capable of modulating regions of arbitrary lateral postflexion nerve activity.
Through the technical scheme, the invention realizes the stimulation of at least one electrode to the rein and/or the upstream and downstream fiber bundles thereof, and realizes the feasibility of using the deep brain stimulation system to treat mental diseases such as depression, addiction and the like.
Drawings
FIG. 1 is a schematic diagram of an implantable deep brain stimulation system according to the present invention
Fig. 2 is a detailed view of fig. 1.
FIG. 3 is a schematic diagram of deep brain stimulation target tissue according to the present invention.
Fig. 4 is a flow chart of a method according to a first embodiment of the invention.
Fig. 5 is a flow chart of a method according to a second embodiment of the invention.
Fig. 6 is a flow chart of a method according to a third embodiment of the invention.
Detailed Description
As shown in fig. 1, the implantable deep brain stimulation system includes an implantable pulse generator that delivers stimulation therapy to a patient. The patient is typically, but not necessarily, a human. In the example shown in fig. 1, the implantable deep brain stimulation system may be referred to as a Deep Brain Stimulation (DBS) system because the implantable pulse generator delivers the electrical stimulation therapy signal directly to tissue within the brain, such as the subdural of the brain. In addition to or instead of the deep brain site, the implantable pulse generator transmits electrical stimulation signals to a target tissue site on a surface of the brain (e.g., a cortical surface of the brain) such as between the patient's skull and the dura mater of the brain. The implantable pulse generator may deliver a stimulation signal to the brain of a patient to treat any of a variety of patient conditions, such as neurological disorders or diseases. Neurological disorders may include depression, dementia, obsessive-compulsive disorder, and movement disorders such as parkinson's disease, spasticity, epilepsy, and dystonia. DBS is also an effective means for treating other patient conditions such as migraine, obesity, and affective disorders (e.g., depression, addiction, or anxiety disorders).
The stimulating electrical signal generated by the implantable pulse generator is transmitted to the patient via one or more contacts. The electrodes that deliver the stimulation electrical signals may be disposed on one or more implantable brain electrodes having catheters, and in some cases on the housing of the pulse generator. The electrical stimulation signal may be in the form of controlled current or voltage pulses or a substantially continuous waveform. The individual parameters of these pulses or waveforms may be modulated by one or more modes. These pulses or waveforms may be substantially continuous or defined in short bursts (bursts), segments, or envelopes, and may be delivered alone or in combination with pulses and waveforms defined by one or more other stimulation programs. Although fig. 1 shows a fully implantable pulse generator, the techniques described in this disclosure may also be applied to external stimulators having electrodes arranged via a percutaneously implantable lead, wherein an electrode attached to the skin surface is employed as a reference electrode. Additionally, in some cases, the implantable electrode may be disposed on a leadless stimulator, in which case the pulse generator may not be coupled to the electrode.
In the embodiment shown in fig. 1, the implantable pulse generator is implanted within a subcutaneous pocket (pocket) in the collarbone region of the patient. The pulse generator generates a programmable electrical stimulation signal (e.g., a current or voltage waveform, or a current or voltage pulse) and delivers the stimulation via an implantable medical electrode having a number of contacts. In some cases, multiple implantable electrodes may be provided. Each electrode may be provided with 4, 8, 12, 16 or more contacts, but the implantable deep brain stimulation system may include any suitable number of contacts on any suitable number of electrodes.
As shown in fig. 2, the electrode L implanted in the brain includes four contacts arranged in a ring shape at different axial positions near the distal end of the catheter.
The proximal end of the electrode may be connected to a cap on the implantable pulse generator directly or via an extension lead. The distal end of the electrode L may be implanted through a hole in the skull at the desired location T of the brain. The electrodes may be placed anywhere within the brain such that contacts located on the electrodes are capable of providing electrical stimulation to a target stimulation site within the brain.
Fig. 3 is a schematic diagram of the structure of a part of the brain tissue related to spirit and emotion. The tissues shown IN the figure include the rein Hb, pineal PG, thalamus medullary SMT, anterior union AC, thalamus adhesion ITA, rein interfoot bundle FR, interfoot nucleus IN. The prior study finds that a special discharge mode of the middle-lateral rein of the brain, namely clustered discharge, is a sufficient condition for depression. There are two centers in the animal's brain, one "bonus center" and one "anti-bonus center". The lateral nucelus area below the brain hippocampus is a "counter rewarding center" which controls most of the negative emotions: fear, tension, anxiety. Animals (including but not limited to humans, mice) experience depression when the discharge pattern of this anti-reward center is converted from a single discharge to a clustered discharge.
Based on the above mechanism, the inventor of the present invention proposes a technical scheme for producing an anti-depression effect by preventing clustered discharge of the outer nucelus region under the third ventricle of the brain. In particular, an improved method of stimulating specific locations in the brain to prevent clustered discharge of the lateral nucelus, and an implantable deep brain stimulation system implementing the method, of the present invention are presented.
In the example shown in fig. 1-3, the contacts of the electrodes are ring-shaped. The ring electrode may be programmed using any suitable programming means known in the art and the electric field is delivered to any tissue adjacent the electrode.
Those skilled in the art will appreciate that the contacts of the electrodes may also have different configurations. For example, the contacts of the electrodes may have a complex electrode array geometry capable of generating a shaped electric field. The complex electrode array geometry may include contacts in different directions around the outer perimeter of each electrode instead of one ring electrode. In this way, the electrical stimulation may be directed in a particular direction to enhance therapeutic efficacy and reduce possible side effects from overstimulating the tissue.
The implantable pulse generator can allow a user to tailor the modulation pattern of pulses on a pulse-by-pulse basis, meaning that at least one stimulation parameter associated with each pulse or pulse interval between adjacent pulses is independent of other pulses or pulse intervals in the pulse pattern. In this way, the pulse modulation mode can be defined in any manner. The electrical stimulation energy may then be delivered to the electrodes according to one of these customized modulation patterns, thereby more effectively and/or efficiently treating specific diseases and conditions.
In one technique for tailoring the pulse pattern, the pulse frequency of the pulse pattern may be independently defined between adjacent pairs of pulses in the pulse pattern. For example, two or more different frequencies may be included in the pulse pattern, switching in a high-to-low, low-to-high, fixed order, or random order.
In another technique for tailoring the pulse pattern, the width of the pulses in the pulse pattern may be independently defined.
In yet another technique for tailoring the pulse pattern, the amplitude of the pulses in the pulse pattern may be independently defined.
In yet another technique for tailoring the pulse pattern, the electrode combinations delivering pulses in the pulse pattern may be independently defined to generate different electric fields for each pulse.
In yet another embodiment for tailoring the pulse pattern, the shape of the pulses in the pulse pattern may be defined independently. For example, any pulse may be defined as a square wave pulse, an exponential pulse, a logarithmic pulse, a ramp pulse, a trapezoidal pulse, or any arbitrary shape.
It should be appreciated that while only one stimulation parameter for each pulse pattern is shown as being independently defined on a pulse-by-pulse basis in the above techniques, any number of different stimulation parameters may be independently defined on a pulse-by-pulse basis.
It should also be appreciated that while one or more stimulation parameters associated with each pulse of the pulse pattern have been described as being defined independently, any combination may be made within the pulse pattern or anywhere in the pulse pattern.
Example 1
The present embodiment provides a method of treating mental disorders using an implantable deep brain stimulation system including electrodes, leads, and a pulse generator to stimulate the nucleus of a brain (Hb), the method comprising:
Step S101: placing at least one electrode in at least one side of the reins, so that at least one contact of the electrode is in the reins area; the electrode can transmit a stimulation signal parallel to the axon to the reins;
step S102: connecting the electrodes to at least one wire and connecting the wire ends to a pulse generator;
Step S103: generating a stimulation signal using a pulse generator and delivering the stimulation signal to contacts of the electrodes via wires;
Step S104: the neural activity of the electrode is regulated by the portion of the electrode within the reins nucleus.
In a preferred embodiment, the method is capable of preventing clustered discharge of the outer nucelus region.
In a preferred embodiment, the implantable deep brain stimulation system is capable of stimulating one or both lateral nucela.
In a preferred embodiment, the area where the implanted deep brain stimulation system is capable of modulating the activity of any lateral reins nerve comprises the inside of the lateral part of the reins.
In a preferred embodiment, one or more of the contacts of the electrode is configured as a cathode.
In a preferred embodiment, any one or more of the contacts of the electrode is configured as an anode.
In a preferred embodiment, the voltage of the stimulation signal output by the pulse generator is between 0.1 and 10v, the pulse width is between 10 and 450 mu s, and the frequency is between 2 and 20 kHz. In a more preferred embodiment, the frequency is between 50 and 200 Hz.
In a preferred embodiment, the frequency of the stimulation signal output by the pulse generator is modulated in at least one cyclic pattern.
Example 2
The present embodiment provides a method for treating mental disorders using an implantable deep brain stimulation system including electrodes, leads, and pulse generators to stimulate the upstream fiber bundle medullary vein (SMT) of the nucleus in the brain, the method comprising:
step S201: placing at least one electrode at any position along the medullary line; the electrodes are capable of delivering a stimulation signal parallel to the fiber bundle to the medullary canal;
Step S202: connecting the electrodes to at least one wire and connecting the wire ends to a pulse generator;
step S203: generating a stimulation signal using a pulse generator and delivering the stimulation signal to any contact of the electrode via a wire;
step S204: the neural activity is regulated by the electrode portion in the vicinity of the medullary vein.
Preferably, the implantable deep brain stimulation system is capable of stimulating one-sided and/or two-sided medullary areas.
In a preferred embodiment, in the step S201, at least one electrode is placed on one side of the medullary canal.
In a preferred embodiment, in the step S204, the implanted deep brain stimulation system can regulate the active area of any lateral medullary nerve, and finally achieve the purpose of regulating and controlling the nuback.
In a preferred embodiment, the method is capable of preventing clustered discharge of the outer nucelus region.
In a preferred embodiment, any one or more of the contacts of the electrode is configured as a cathode.
In a preferred embodiment, any one or more of the contacts of the electrode is configured as an anode.
In a preferred embodiment, the voltage of the stimulation signal generated by the pulse generator is between 0.1 and 10v, the pulse width is between 10 and 450 mu s, and the frequency is between 2 and 20 kHz. In a more preferred embodiment, the frequency is between 50 and 200 Hz.
In a preferred embodiment, the frequency of the stimulation signal output by the pulse generator is modulated in at least one cyclic pattern.
Example 3
The present embodiment provides a method for treating mental disorders with an implantable deep brain stimulation system including electrodes, leads, and pulse generators, after stimulating a fiber bundle downstream of the nucelus Qu Shu (FR) in the brain, the method comprising:
step S301: at least one electrode is placed at any position along the backward bending beam; the electrode is capable of delivering a stimulation signal parallel to the fiber bundle to the retroflexion bundle;
step S302: connecting the electrodes to at least one wire and connecting the wire ends to a pulse generator;
Step S303: generating a stimulation signal using a pulse generator and delivering the stimulation signal to any contact of the electrode via a wire;
Step S304: the neural activity is regulated by the electrode portion near the posterior bundle.
In a preferred embodiment, the method is capable of preventing clustered discharge of the outer nucelus region.
In a preferred embodiment, the implantable deep brain stimulation system is capable of stimulating one-sided posterior leaflet and/or two-sided posterior leaflet regions.
In a preferred embodiment, in the step S301, at least one electrode is placed in one posterior bundle.
In a preferred embodiment, the implantable deep brain stimulation system is capable of modulating regions of arbitrary lateral posterior bundle neural activity.
In a preferred embodiment, any one or more of the contacts of the electrode is configured as a cathode.
In a preferred embodiment, any one or more of the contacts of the electrode is configured as an anode.
In a preferred embodiment, the voltage of the stimulation signal emitted by the pulse generator is between 0.1 and 10v, the pulse width is between 10 and 450 mu s, and the frequency is between 2 and 20 kHz. In a more preferred embodiment, the frequency is between 50 and 200 Hz.
In a preferred embodiment, the frequency of the stimulation signal output by the pulse generator is modulated in at least one cyclic pattern.
Example 4
The present embodiment provides an implantable deep brain stimulation system for stimulating the nucleus pulposus (Hb) in the brain to treat psychotic disorders, the implantable deep brain stimulation system comprising electrodes, leads and a pulse generator, wherein:
at least one of said electrodes being adapted to be placed in at least one side of the reins with at least one contact of said electrode in said reins region; the electrode can transmit a stimulation signal parallel to the axon to the reins;
The electrode is connected to at least one wire and connects the wire end to the pulse generator;
the pulse generator is able to generate a stimulation signal and to transmit it through the wire to the contacts of the electrode, modulating its neural activity through the portion of said electrode inside the reins.
In a preferred embodiment, the implantable deep brain stimulation system is capable of stimulating one or both lateral nucela.
In a preferred embodiment, the area where the implanted deep brain stimulation system is capable of modulating the activity of any lateral reins nerve comprises the inside of the lateral part of the reins.
In a preferred embodiment, the implantable deep brain stimulation system is capable of preventing clustered discharge of the lateral nucelus region.
In a preferred embodiment, one or more of the contacts of the electrode is configured as a cathode.
In a preferred embodiment, any one or more of the contacts of the electrode is configured as an anode.
In a preferred embodiment, the voltage of the stimulation signal output by the pulse generator is between 0.1 and 10v, the pulse width is between 10 and 450 mu s, and the frequency is between 2 and 20 kHz. In a more preferred embodiment, the frequency is between 50 and 200 Hz.
In a preferred embodiment, the frequency of the stimulation signal output by the pulse generator is modulated in at least one cyclic pattern.
Example 5
The embodiment provides an implantable deep brain stimulation system for stimulating the upstream fiber bundle medullary vein (SMT) of the nude in the brain to treat mental diseases, the implantable deep brain stimulation system comprises an electrode, a lead and a pulse generator, wherein:
at least one of the electrodes is adapted to be placed at any location along the medullary track; the electrodes are capable of delivering a stimulation signal parallel to the fiber bundle to the medullary canal;
The electrodes are connected to at least one wire, and the ends of the wire are connected to a pulse generator;
the pulse generator is capable of generating a stimulation signal and delivering it via a wire to any contact of the electrode, modulating its neural activity via the electrode portion in the vicinity of the medullary canal.
In a preferred embodiment, the implantable deep brain stimulation system is capable of stimulating one-sided and/or two-sided medullary areas.
In a preferred embodiment, the at least one electrode is adapted to be placed on one side of the medullary canal.
In a preferred embodiment, the implantable deep brain stimulation system is capable of preventing clustered discharge of the lateral nucelus region.
In a preferred embodiment, any one or more of the contacts of the electrode is configured as a cathode.
In a preferred embodiment, any one or more of the contacts of the electrode is configured as an anode.
In a preferred embodiment, the voltage of the stimulation signal generated by the pulse generator is between 0.1 and 10v, the pulse width is between 10 and 450 mu s, and the frequency is between 2 and 20 kHz. In a more preferred embodiment, the frequency is between 50 and 200 Hz.
In a preferred embodiment, the frequency of the stimulation signal output by the pulse generator is modulated in at least one cyclic pattern.
Example 6
The embodiment provides an implantable deep brain stimulation system for stimulating post-bundle Qu Shu (FR) of a nuclear downstream fiber in the brain to treat mental disorders, the implantable deep brain stimulation system comprising an electrode, a lead and a pulse generator, wherein:
at least one of the electrodes is adapted to be placed at any location along the posterior flexor beam; the electrode is capable of delivering a stimulation signal parallel to the fiber bundle to the retroflexion bundle;
The electrodes are connected to at least one wire, and the ends of the wire are connected to the pulse generator;
the pulser can generate a stimulation signal and deliver it via wires to any contacts of the electrodes, modulating its neural activity via the electrode portion near the posterior bundle.
In a preferred embodiment, the implantable deep brain stimulation system is capable of stimulating one-sided posterior leaflet and/or two-sided posterior leaflet regions.
In a preferred embodiment, the at least one electrode is adapted to be placed on one side for posterior buckling.
In a preferred embodiment, the implantable deep brain stimulation system is capable of modulating regions of arbitrary lateral posterior bundle neural activity.
In a preferred embodiment, the implantable deep brain stimulation system is capable of preventing clustered discharge of the lateral nucelus region.
In a preferred embodiment, any one or more of the contacts of the electrode is configured as a cathode.
In a preferred embodiment, any one or more of the contacts of the electrode is configured as an anode.
In a preferred embodiment, the voltage of the stimulation signal emitted by the pulse generator is between 0.1 and 10v, the pulse width is between 10 and 450 mu s, and the frequency is between 2 and 20 kHz. In a more preferred embodiment, the frequency is between 50 and 200 Hz.
In a preferred embodiment, the frequency of the stimulation signal output by the pulse generator is modulated in at least one cyclic pattern.
While particular embodiments of the present invention have been shown and described above, the invention is not limited thereto. It will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the scope of the present invention is intended to include all alternatives, modifications, and equivalents as may be included within the spirit and scope of the present invention.
Claims (10)
1. An implantable deep brain stimulation system for stimulating the nucleus pulposus (Hb) within the brain to treat mental disorders, the implantable deep brain stimulation system comprising electrodes, leads, and a pulse generator, characterized by:
at least one of said electrodes being adapted to be placed in at least one side of the reins with at least one contact of said electrode in said reins region; the electrode can transmit a stimulation signal parallel to the axon to the reins;
The electrode is connected to at least one wire and connects the wire end to the pulse generator;
The pulse generator can generate a stimulation signal and transmit the stimulation signal to the contact point of the electrode through a lead wire, and the neural activity of the electrode is regulated through the part of the electrode in the reins core; the voltage of the stimulation signal is between 0.1 and 10v, the pulse width is between 10 and 450 mu s, and the frequency is between 2 and 20 kHz; the frequency of the stimulation signal output by the pulse generator is modulated according to at least one cyclic pattern.
2. The implantable deep brain stimulation system according to claim 1, wherein the implantable deep brain stimulation system is capable of stimulating one or both lateral reins.
3. The implantable deep brain stimulation system according to claim 1, wherein the area of the implantable deep brain stimulation system capable of modulating any lateral reins nerve activity comprises the inside of the lateral reins portion.
4. An implantable deep brain stimulation system for stimulating the upstream fiber bundle medullary vein (SMT) of a nude in the brain to treat mental disorders, the implantable deep brain stimulation system comprising electrodes, leads and a pulse generator, characterized in that:
at least one of the electrodes is adapted to be placed at any location along the medullary track; the electrodes are capable of delivering a stimulation signal parallel to the fiber bundle to the medullary canal;
The electrodes are connected to at least one wire, and the ends of the wire are connected to a pulse generator;
The pulse generator can generate a stimulation signal and transmit the stimulation signal to any contact point of the electrode through a lead wire, and the neural activity of the pulse generator is regulated through the electrode part near the medullary vein; the voltage of the stimulation signal is between 0.1 and 10v, the pulse width is between 10 and 450 mu s, and the frequency is between 2 and 20 kHz; the frequency of the stimulation signal output by the pulse generator is modulated according to at least one cyclic pattern.
5. The implantable deep brain stimulation system according to claim 4, capable of stimulating one-sided and/or two-sided medullary areas.
6. The implantable deep brain stimulation system according to claim 4, wherein the at least one electrode is adapted to be placed on one side of a medullary canal.
7. An implantable deep brain stimulation system for stimulating post-bundle Qu Shu (FR) of the subbrain nuclei to treat psychotic disorders, the implantable deep brain stimulation system comprising electrodes, leads and a pulse generator, characterized by:
at least one of the electrodes is adapted to be placed at any location along the posterior flexor beam; the electrode is capable of delivering a stimulation signal parallel to the fiber bundle to the retroflexion bundle;
The electrodes are connected to at least one wire, and the ends of the wire are connected to the pulse generator;
the pulse generator can generate a stimulation signal and transmit the stimulation signal to any contact point of the electrode through a lead, and the nerve activity of the stimulation signal is regulated through the electrode part near the retroflexion; the voltage of the stimulation signal is between 0.1 and 10v, the pulse width is between 10 and 450 mu s, and the frequency is between 2 and 20 kHz; the frequency of the stimulation signal output by the pulse generator is modulated according to at least one cyclic pattern.
8. An implantable deep brain stimulation system according to claim 7, characterized in that the implantable deep brain stimulation system is capable of stimulating one-sided posterior stranding and/or bilateral posterior stranding regions.
9. An implantable deep brain stimulation system according to claim 7, wherein the at least one electrode is adapted to be placed in a lateral posterior bundle.
10. An implantable deep brain stimulation system according to claim 7, capable of modulating regions of arbitrary lateral postflexion nerve activity.
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| CN103949010A (en) * | 2014-05-05 | 2014-07-30 | 吉林大学 | Application of high-frequency current for treating OSA |
| CN104189995A (en) * | 2014-09-30 | 2014-12-10 | 苏州景昱医疗器械有限公司 | Deep brain stimulation electrode, device and method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103949010A (en) * | 2014-05-05 | 2014-07-30 | 吉林大学 | Application of high-frequency current for treating OSA |
| CN104189995A (en) * | 2014-09-30 | 2014-12-10 | 苏州景昱医疗器械有限公司 | Deep brain stimulation electrode, device and method |
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