CN110868078B - Symmetrical half-bridge LC series resonance sine power conversion circuit - Google Patents
Symmetrical half-bridge LC series resonance sine power conversion circuit Download PDFInfo
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- CN110868078B CN110868078B CN201911195829.0A CN201911195829A CN110868078B CN 110868078 B CN110868078 B CN 110868078B CN 201911195829 A CN201911195829 A CN 201911195829A CN 110868078 B CN110868078 B CN 110868078B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
- H02M3/33576—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer
- H02M3/33592—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer having a synchronous rectifier circuit or a synchronous freewheeling circuit at the secondary side of an isolation transformer
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0038—Circuits or arrangements for suppressing, e.g. by masking incorrect turn-on or turn-off signals, e.g. due to current spikes in current mode control
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
- H02M1/0058—Transistor switching losses by employing soft switching techniques, i.e. commutation of transistors when applied voltage is zero or when current flow is zero
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The application discloses integrated magnetic element of LCT of sinusoidal power converter, magnetic element include first high frequency transformer primary planar winding, second high frequency transformer primary planar winding and high frequency transformer secondary planar winding, magnetic element still includes: parasitic capacitance and parasitic inductance; the parasitic capacitor is closely coupled below the primary planar winding of the first high-frequency transformer and above the primary planar winding of the second high-frequency transformer; and the parasitic inductance is closely coupled below the primary planar winding of the second high-frequency transformer and above the secondary planar winding of the high-frequency transformer, wherein the parasitic capacitance and the parasitic inductance form an LC series resonance circuit. Through the technical scheme in the application, the resonant capacitor, the resonant inductor and the high-frequency transformer are integrally designed by using one magnetic loop, the size of the LCT element is greatly reduced, the parasitic parameters of the LCT element are utilized, and the power density of the sinusoidal power converter is improved.
Description
Technical Field
The application relates to the technical field of direct current conversion, in particular to an LCT integrated magnetic element of a sine power converter.
Background
With the rapid development of electronic equipment, the power density requirement of the dc-dc converter in the dc-dc conversion technology field is higher and higher, and in order to reduce the size of passive devices such as an inductor and a capacitor, the operating frequency of the dc-dc converter is higher and higher, and in a high-frequency operating mode, the soft switching of the converter is particularly important, and the resonant converter is a typical form of the soft switching converter.
The half-bridge series resonant converter is a relatively wide soft switching topology used in medium power level, and the working principle of the half-bridge series resonant converter is that the gain of the converter is adjusted by adjusting the switching frequency of the half-bridge to realize negative feedback on output voltage after sampling and error comparison of load voltage.
In the prior art, a plurality of magnetic loops are generally adopted to design a resonant capacitor, a resonant inductor and a high-frequency transformer respectively, so that the size of an LCT element is larger, and the power density of a sinusoidal power converter adopting the LCT element as a resonant converter is lower.
Disclosure of Invention
The purpose of this application lies in: a magnetic loop is used for integrally designing a resonant capacitor, a resonant inductor and a high-frequency transformer, the size of the LCT element is greatly reduced, the parasitic parameters of the LCT element are utilized, and the power density of the sinusoidal power converter is improved.
The technical scheme of the first aspect of the application is as follows: there is provided an LCT integrated magnetics component for a sinusoidal power converter, the magnetics component comprising a first high frequency transformer primary planar winding, a second high frequency transformer primary planar winding and a high frequency transformer secondary planar winding, the magnetics component further comprising: parasitic capacitance and parasitic inductance; the parasitic capacitor is closely coupled below the primary planar winding of the first high-frequency transformer and above the primary planar winding of the second high-frequency transformer; and the parasitic inductance is closely coupled below the primary planar winding of the second high-frequency transformer and above the secondary planar winding of the high-frequency transformer, wherein the parasitic capacitance and the parasitic inductance form an LC series resonance circuit.
In any of the above technical solutions, further, the primary planar winding of the first high-frequency transformer is composed of three layers of printed circuit boards, a first buried via interlayer transition region is arranged on each printed circuit board, two adjacent layers of printed circuit boards are interconnected through the first buried via interlayer transition region, and a turn of winding printed line is printed on each layer of printed circuit board.
In any of the above technical solutions, further, the primary planar winding of the second high-frequency transformer is composed of three layers of printed circuit boards, each layer of printed circuit board is printed with a winding printed line, and the winding printed line shape of the first layer of printed circuit board of the primary planar winding of the second high-frequency transformer is the same as the winding printed line shape of the third layer of printed circuit board of the primary planar winding of the first high-frequency transformer.
In any of the above technical solutions, further, the secondary planar winding of the high-frequency transformer is composed of two layers of printed circuit boards, a third buried via interlayer transition region is arranged on the printed circuit boards, the two layers of printed circuit boards are connected in parallel through the third buried via interlayer transition region, a turn of winding printed wiring is printed on each layer of printed circuit board, and the winding printed wiring on the two layers of printed circuit boards have the same shape.
In any one of the above technical solutions, further, the magnetic element is provided with an iron core through hole, and the magnetic element further includes an EI-type iron core, which passes through the iron core through hole and passes through the primary planar winding of the first high-frequency transformer, the primary planar winding of the second high-frequency transformer, and the parasitic capacitor.
The technical scheme of the second aspect of the application is as follows: there is provided a symmetrical half-bridge LC series resonant sinusoidal power conversion circuit comprising an LC series resonant circuit and a high frequency transformer, the LC series resonant circuit and the high frequency transformer being formed by LCT integrated magnetics of a sinusoidal power converter as described in any one of the first aspect.
In any one of the above technical solutions, further, the power conversion circuit further includes: the circuit comprises a symmetrical half-bridge circuit, a rectifying circuit and a sine conversion control circuit; the input end of the LCT integrated magnetic element is connected with the two output ends of the symmetrical half-bridge circuit, and the output end of the LCT integrated magnetic element is connected with the input end of the rectifying circuit, wherein the parasitic capacitance of the LCT integrated magnetic element is connected with the first output end of the symmetrical half-bridge circuit, and the primary plane winding of the LCT integrated magnetic element is connected with the second output end of the symmetrical half-bridge circuit; the first output end of the sine conversion control circuit is connected to the control end of the symmetrical half-bridge circuit, the second output end of the sine conversion control circuit is connected to the control end of the rectifying circuit, and the sine conversion control circuit is used for sending a conduction instruction to the symmetrical half-bridge circuit and the rectifying circuit.
In any of the above technical solutions, further, the symmetric half-bridge circuit includes two half-bridge transistors, the rectifier circuit includes four full-bridge synchronous rectifier transistors, and the first output end of the sinusoidal conversion control circuit is provided with two gate voltage-dividing drive circuits, and is sequentially connected to the gate of the first half-bridge transistor and the gate of the second half-bridge transistor; and the second output end of the sine conversion control circuit is provided with four grid voltage division driving circuits which are sequentially connected with the grids of the four full-bridge synchronous rectification transistors.
The beneficial effect of this application is:
1. the power density of the sinusoidal power converter is improved: the LCT integrated magnetic element realizes the functions of three components such as a resonant capacitor, a resonant inductor and a high-frequency transformer through a magnetic circuit with integrated design, saves the resonant capacitor and the resonant inductor which occupy large space and size, and improves the power density of a sine power converter. The primary planar winding of the first high-frequency transformer, the primary planar winding of the second high-frequency transformer and the secondary planar winding of the high-frequency transformer are connected with one another through a buried hole interlayer transition area on the printed circuit board, each layer of circuit board winding is one turn, the maximum utilization of the occupied area of a printed line is realized, the influence of the proximity effect between the windings in the printed boards on the same layer is reduced, the rectangular conductor flat ratio of the printed windings is increased, the influence of the skin effect is reduced, the effective current carrying capacity in the windings is improved, and the power density of the converter is further improved.
2. The parasitic parameter control of the high-frequency transformer is realized: the transformer parasitic capacitance and the leakage inductance of the high-frequency switching power supply have great influence on the design of a power loop, and the LCT integrated magnetic element realizes the control of parasitic parameters through a specific laminated structure and a magnetic dielectric material, so that the influence of the parasitic capacitance and the leakage inductance on the power loop is avoided.
Therefore, the LCT integrated magnetic element of the sinusoidal power converter adopts the magnetic loop to integrate and design the resonant capacitor, the resonant inductor and the high-frequency transformer, greatly reduces the size of the LCT element, controls and utilizes the parasitic parameters of the high-frequency transformer, and improves the power density of the sinusoidal power converter.
In addition, in this application, through setting up sinusoidal conversion control circuit, including isolation transformer and six grid partial pressure drive circuit, wherein, grid partial pressure drive circuit is open loop control, can not lead to disturbing the peak because of input/output's feedback when transient step, does not have the hidden danger of sharing, and the reliability is high.
In the grid voltage division driving circuit, the independent adjustment of the conduction front edge and the conduction back edge of the transistor is realized by setting different resistance values of the forward diode series resistor and the reverse diode series resistor, the inverter is controlled in an open loop mode, the driving pulse width is constant, the independent adjustment of the conduction front edge and the conduction back edge of the transistor is matched with dead zone adjustment, the voltage and current overlapping during switching of the switch can be reduced, the ringing is improved, thereby reducing the switching loss, simultaneously, independently adjusting the on-voltage and the off-voltage of the transistor through different numbers of the diodes connected in series in the forward and reverse directions, simply and effectively solving the driving problem of different positive and negative withstand voltages of wide bandgap semiconductor grid sources, leading the positive and negative voltages of the same path of driving signals reaching the grid sources to be different, the transistor is in saturation conduction and rapid turn-off, and the tolerance design of the voltage between the grid source and the grid source is ensured.
Drawings
The advantages of the above and/or additional aspects of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a schematic diagram of an LCT integrated magnetics component of a sinusoidal power converter according to an embodiment of the present application;
fig. 2 is a schematic diagram of a first, second and third layer printed circuit boards of a first high frequency transformer primary planar winding according to one embodiment of the present application;
fig. 3 is a front, top, side and bottom view of an EI-type core according to one embodiment of the present application;
fig. 4 is a picture of an LCT integrated magnetic element according to one embodiment of the present application;
FIG. 5 is a three-dimensional schematic view of an LCT integrated magnetic element according to one embodiment of the present application;
FIG. 6 is a schematic diagram of a symmetric half-bridge LC series resonant sinusoidal power conversion circuit according to one embodiment of the present application;
FIG. 7 is a schematic diagram of an isolation transformer according to an embodiment of the present application;
fig. 8 is a schematic diagram of a gate voltage division driving circuit according to an embodiment of the present application.
Detailed Description
In order that the above objects, features and advantages of the present application can be more clearly understood, the present application will be described in further detail with reference to the accompanying drawings and detailed description. It should be noted that the embodiments and features of the embodiments of the present application may be combined with each other without conflict.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, however, the present application may be practiced in other ways than those described herein, and therefore the scope of the present application is not limited by the specific embodiments disclosed below.
The first embodiment is as follows:
the first embodiment is described below with reference to fig. 1 to 5.
As shown in fig. 1, the present embodiment provides an LCT integrated magnetics of a sinusoidal power converter, the magnetics comprising a first high frequency transformer primary planar winding 101, a second high frequency transformer primary planar winding 102 and a high frequency transformer secondary planar winding 105, the magnetics further comprising: parasitic capacitance 103 and parasitic inductance 104;
the parasitic capacitance 103 is closely coupled below the first high-frequency transformer primary planar winding 101 and above the second high-frequency transformer primary planar winding 102.
Specifically, a high-dielectric-constant dielectric material with an adjustable thickness is added between the primary planar winding 101 of the first high-frequency transformer and the primary planar winding 102 of the second high-frequency transformer in a mixed-voltage mode to serve as the parasitic capacitor 103, and the three are tightly coupled to control the size of the inter-turn parasitic capacitor 103, so that the integrated design of the resonant capacitor of the sinusoidal power converter is completed.
The parasitic inductance 104 is closely coupled below the secondary planar winding 102 of the second high frequency transformer and above the secondary planar winding 105 of the high frequency transformer.
Specifically, a magnetic dielectric material with adjustable thickness is added between the primary planar winding 102 and the secondary planar winding 105 of the second high-frequency transformer to serve as the parasitic inductor 104, so that the size of leakage inductance of the parasitic inductor 104 is controlled, and the integrated design of the resonant inductance of the sinusoidal power converter is completed.
In this embodiment, the first high-frequency transformer primary planar winding 101 and the second high-frequency transformer primary planar winding 102 are connected in series to serve as a primary winding, the high-frequency transformer secondary planar winding 105 serves as a secondary winding, the parasitic inductor 104 is multiplexed, and the three windings serve as high-frequency transformers, thereby completing the integrated design of the high-frequency transformers.
The parasitic capacitance 103 and the parasitic inductance 104 constitute an LC series resonant circuit.
Specifically, a parasitic capacitor 103 is arranged between a primary planar winding 101 of the first high-frequency transformer and a primary planar winding 102 of the second high-frequency transformer, a parasitic inductor 104 is arranged between a primary planar winding 102 of the second high-frequency transformer and a secondary planar winding 105 of the high-frequency transformer, the parasitic capacitor 103 is connected in series with the primary planar winding 101 of the first high-frequency transformer and the primary planar winding 102 of the second high-frequency transformer, an equivalent circuit of the parasitic inductor 104 is connected in series with the primary planar windings of the first high-frequency transformer and the second high-frequency transformer, the parasitic inductor 104 can control the coupling coefficient of the primary windings and the secondary windings, the magnetic dielectric material can be thickened to reduce the coupling coefficient, increase the leakage inductance, reduce the thickness of the magnetic dielectric material to improve the coupling coefficient, reduce the leakage inductance and realize the control of the leakage inductance.
With the above design, a magnetic circuit is designed using a single magnetic circuit of a ferrite magnetic element, and the laminated structure of the first high-frequency transformer primary planar winding 101, the parasitic capacitance (high dielectric constant dielectric material) 103, the second high-frequency transformer primary planar winding 102, the parasitic inductance (magnetic dielectric material) 104, and the high-frequency transformer secondary planar winding 105 is tightly coupled in this order from top to bottom. By the structural design, the integrated design of the LC resonance circuit and the high-frequency transformer is completed, the sizes of the parasitic capacitor 103 and the parasitic inductor 104 are adjusted, the LC resonance frequency is adjusted to be the same as the switching frequency of the sinusoidal power converter, and the sinusoidal resonance of the power converter is realized.
Further, the primary planar winding 101 of the first high-frequency transformer is composed of three layers of printed circuit boards, a first buried hole interlayer transition area 108 is arranged on each printed circuit board, two adjacent layers of printed circuit boards are interconnected through the first buried hole interlayer transition area 108, and one turn of winding printed lines are printed on each layer of printed circuit board.
Specifically, in this embodiment, the first high-frequency transformer primary planar winding 101, the second high-frequency transformer primary planar winding 102, and the high-frequency transformer secondary planar winding 105 are interconnected by using a printed circuit board through a buried via interlayer transition region 108 on the printed circuit board, where each layer of the circuit board winding is one turn.
Taking the primary planar winding 101 of the first high-frequency transformer as an example, as shown in fig. 2, fig. 2(a), fig. 2(b) and fig. 2(c) are sequentially a first layer PCB winding, a second layer PCB winding and a third layer PCB winding, and the layout drawing of the PCB winding is completed by taking the section of a femto EI32/6/20 type ferrite core as a design.
In this embodiment, a board material of FR4 is used as an interlayer dielectric of the PCB winding, a material of Np0 (typical value of dielectric constant is 85) is used as a high dielectric constant dielectric material, and FPC _ C350 (relative permeability is 9 ± 20%) is used as a magneto-dielectric material.
The interconnection is realized through the transition region between the buried hole layers on the printed circuit board, the winding of each layer of the circuit board is one turn, the maximum utilization of the occupied area of the printed lines is realized, the influence of the proximity effect between the windings in the printed boards on the same layer is reduced, the rectangular conductor flat ratio of the printed windings is increased, the influence of the skin effect is reduced, and the effective current carrying capacity in the windings is improved. The primary interlayer copper foil occupation rate is estimated to be 90%, and the calculation is carried out according to a plate capacitance formula:
designed capacitance value of 17nF, epsilon0Taking 8.86X 10-12F/m, epsilonrTo 85, it can be calculated that: the thickness d is 36um, so in circuit debugging, Np0 customizes the thickness specification to be 36um, two specifications of 50um, can combine and adjust thickness d to adjust the resonance capacitance value.
The resonance leakage inductance is realized by a leakage inductance adjusting dielectric layer, namely the FPC C350, in the process of debugging the circuit, the FPC C350 with the thickness specification of 0.5mm and 1mm is customized, and the thickness can be combined and adjusted, so that the resonance inductance value is adjusted.
Further, the primary planar winding 102 of the second high-frequency transformer is composed of three layers of printed circuit boards, each layer of printed circuit board is printed with a turn of winding printed line, and the winding printed line shape of the first layer of printed circuit board of the primary planar winding 102 of the second high-frequency transformer is the same as the winding printed line shape of the third layer of printed circuit board of the primary planar winding 101 of the first high-frequency transformer.
Specifically, the last layer of winding of the primary planar winding 101 of the first high-frequency transformer has the same shape as the first secondary winding of the primary planar winding 102 of the second high-frequency transformer, the last layer of winding of the primary planar winding 101 of the first high-frequency transformer is tightly attached to the parasitic capacitor (high-dielectric-constant dielectric material) 103 and is located above the parasitic capacitor (high-dielectric-constant dielectric material) 103, and the value of the parasitic capacitor 103 between the last layer of winding of the primary planar winding 101 of the first high-frequency transformer and the first secondary winding of the primary planar winding 102 of the second high-frequency transformer is increased by increasing the thickness of the middle dielectric material below the parasitic capacitor 103.
Further, the secondary planar winding 105 of the high-frequency transformer is composed of two layers of printed circuit boards, a third buried hole interlayer transition region is arranged on each printed circuit board, the two layers of printed circuit boards are connected in parallel through the third buried hole interlayer transition region, a turn of winding printed lines are printed on each layer of printed circuit board, and the winding printed lines on the two layers of printed circuit boards are identical in shape.
Further, the magnetic element is provided with an iron core through hole 106, and the magnetic element further comprises an EI-shaped iron core 107, wherein the EI-shaped iron core 107 passes through the iron core through hole 106, and passes through the first high-frequency transformer primary planar winding 101, the second high-frequency transformer primary planar winding 102 and the parasitic capacitor 103.
Specifically, as shown in fig. 3 and 4, in the present embodiment, a flying magnet EI32/6/20 type ferrite core is selected as the EI type iron core 107 for design, and specific parameters of the EI type iron core 107 are not described herein again. The position and thickness of the air gap of the EI-shaped iron core 107 can greatly adjust the leakage inductance of the primary and secondary sides of the high-frequency transformer. The coupling coefficient can be reduced and the leakage inductance can be increased by increasing the air gap of the central magnetic column. By increasing the air gaps of the magnetic columns on the two sides, the excitation inductance and the leakage inductance of the transformer can be synchronously reduced under the condition of keeping the coupling coefficient unchanged. For an LC sinusoidal power converter requiring wide temperature range operation, the full passage of the magnetic circuit through the EI-type iron core 107 results in large variation of inductance, and the variation of leakage inductance is reduced by increasing the thickness of the air gap.
As shown in fig. 5, a resonant capacitor, a resonant inductor and a high-frequency transformer are integrally designed by using a magnetic loop, and the magnitude control of the inter-turn parasitic capacitance is realized by adding a thickness-adjustable high-dielectric-constant dielectric material layer between turns of a primary planar winding of the high-frequency transformer, so as to complete the integrated design of the resonant capacitor; and a magnetic dielectric material layer with adjustable thickness is added between the primary winding and the secondary winding of the high-frequency transformer to realize the control of the size of leakage inductance and complete the integrated design of the resonant inductor. The size of the LCT element is greatly reduced, parasitic parameters of the LCT element are utilized, the power density of the sine power converter is improved, and through calculation of the power density, compared with the combination of a traditional LC resonant circuit and a high-frequency transformer, the power density of the LCT integrated magnetic element in the embodiment is improved to 270W/cubic inch from 200W/cubic inch.
Example two:
the second embodiment will be described below with reference to fig. 6 to 8.
As shown in fig. 6, the present embodiment provides a symmetrical half-bridge LC series resonant sinusoidal power conversion circuit, which includes an LC series resonant circuit and a high frequency transformer, wherein the LC series resonant circuit and the high frequency transformer are formed by the LCT integrated magnetics of the sinusoidal power converter in the above-described embodiment, i.e., shown by dashed lines.
Further, the power conversion circuit further includes: symmetrical half-bridge circuit, rectifier circuit and sinusoidal conversion control circuit, wherein, sinusoidal conversion control circuit's first output is connected in symmetrical half-bridge circuit's control end, and sinusoidal conversion control circuit's second output is connected in rectifier circuit's control end, and sinusoidal conversion control circuit is used for sending the instruction of switching on to symmetrical half-bridge circuit and rectifier circuit.
Furthermore, the symmetrical half-bridge circuit comprises two half-bridge transistors, the rectifying circuit comprises four full-bridge synchronous rectifying transistors, and a first output end of the sine conversion control circuit is provided with two grid voltage division driving circuits which are sequentially connected with a grid of the first half-bridge transistor and a grid of the second half-bridge transistor;
and the second output end of the sine conversion control circuit is provided with four grid voltage division driving circuits which are sequentially connected with the grids of the four full-bridge synchronous rectification transistors.
Specifically, the sine conversion control circuit includes a pulse width controller 151, a gate driver 152 and an isolation transformer 153 which are sequentially connected, and the sine conversion control circuit further includes: the driving circuit comprises a first driving circuit and a second driving circuit, wherein the first driving circuit is arranged at a first output end of the sine conversion control circuit, and the second driving circuit is arranged at a second output end of the sine conversion control circuit 15;
the output end of the pulse width controller 151 is connected to the input end of the gate driver 152, and the pulse width controller 151 is configured to input a control signal to the gate driver 152;
specifically, the pulse width controller 151 includes a clock oscillator, a flip-flop and a logic gate, and a control signal with a constant frequency and a constant width can be generated by a conventional technical means in the prior art.
Preferably, the pulse width controller 151 is an open-loop controller, and the driving voltage frequency and the on pulse width of the pulse width controller 151 are determined by the resonance parameters of the LC series resonant circuit. The set driving voltage frequency and the conduction pulse width are kept constant, the pulse width is fully conducted except for a protection dead zone for preventing the transistors from being in common, namely the duty ratio of the conduction pulse width is 49%.
The pulse width controller 151 is a high frequency pulse width controller with a frequency of 750 kHz.
The output end of the gate driver 152 is connected to the primary end of the isolation transformer 153, in this embodiment, a drive integrated circuit such as UCC27714 is provided, and the gate driver 152 is used for enhancing the current driving capability of the control signal through the totem pole of the drive integrated circuit;
the gate driver 152 is a high frequency gate driver with a frequency of 750 kHz.
The secondary terminal of the isolation transformer 153 is connected to the first driving circuit and the second driving circuit respectively, the first driving circuit is arranged at the first output terminal, and is connected to the gate of the first half-bridge transistor 111 and the gate of the second half-bridge transistor 112 at the control terminal of the symmetric half-bridge circuit, the first driving circuit is used for sending a first driving voltage signal, the second driving circuit is arranged at the second output terminal, and is connected to the gates of the four full-bridge synchronous rectification transistors (transistors 210 to 213), and the second driving circuit is used for sending a second driving voltage signal.
Preferably, the same amplitude and opposite phase can be realized by adjusting the same-name end of the transformer, and in this embodiment, the amplitude of the first driving voltage signal is set to be opposite to that of the second driving voltage signal by adjusting the same-name end of the transformer.
Further, as shown in fig. 7, the side secondary end of the isolation transformer 153 is provided with six coils; the first coil 32 and the second coil 33 are connected to a first driving circuit, and the third coil 34, the fourth coil 35, the fifth coil 36 and the sixth coil 37 are connected to a second driving circuit, wherein the first coil 32, the third coil 34 and the fifth coil 36 are first dotted terminals, the second coil 33, the fourth coil 35 and the sixth coil 37 are second dotted terminals, and the first dotted terminals and the second dotted terminals are staggered in phase.
Specifically, the isolation transformer 153 completes the timing control of the six interleaved driving signals through the design of the homonymy end, and realizes the switching control of the switches of the two half-bridge transistors and the synchronous rectification control of the four synchronous rectification transistors.
The primary side 31 of the isolation transformer 153 is connected to the gate driver 152, and receives the control signal Sp with enhanced current driving capability, the positive terminals of the first coil 32, the third coil 34 and the fifth coil 36 on the secondary side of the isolation transformer 153 are dotted terminals, the generation signals Ss1, Ss3 and Ss5 are in phase with the control signal Sp, the negative terminals of the second coil 33, the fourth coil 35 and the sixth coil 37 are dotted terminals, and the generation signals Ss2, Ss4 and Ss6 are 180 ° out of phase with the control signal Sp, that is, the phases are staggered.
Further, a first output end of the isolation transformer 153 is connected to the gates of the first half-bridge transistor 111 and the second half-bridge transistor 112 through two paths of gate voltage division driving circuits, which are referred to as first gate voltage division driving circuits, and a second output end of the isolation transformer 153 is connected to the gates of four full-bridge synchronous rectification transistors (transistors 210 to 213) through four paths of gate voltage division driving circuits, which are referred to as second gate voltage division driving circuits, wherein the first coil 32 and the second coil 33 are respectively connected to the gates of two half-bridge transistors connected in series in the symmetrical half-bridge resonant circuit through two paths of first gate voltage division driving circuits, and four paths of second gate voltage division driving circuits; the third coil 34, the fourth coil 35, the fifth coil 36, and the sixth coil 37 are connected to the gates of the four synchronous rectification transistors in the synchronous rectification circuit, respectively, sequentially through the four second gate voltage division driving circuits.
Specifically, the signals Ss1 and Ss2 correspond to the first driving voltage signals S1 and S2, and are respectively transmitted to the gates of the first half-bridge transistor 111 and the second half-bridge transistor 112 through two first gate voltage division driving circuits, and the signals Ss1 and Ss2 are electrically isolated and staggered in phase.
The signals Ss3, Ss4, Ss5 and Ss6 correspond to the second driving voltage signals Sa1, Sa2, Sa3 and Sa4 in sequence, and are transmitted to the gates of the synchronous rectification transistors 210, 211, 212 and 213 respectively through four paths of second gate voltage division driving circuits, the signals Ss3, Ss4, Ss5 and Ss6 are electrically isolated, and the signals Ss3 and Ss5 are staggered in phase with the signals Ss4 and Ss 6.
Further, the first gate voltage division driving circuit and the second gate voltage division driving circuit have the same structure. As shown in fig. 8, in this embodiment, one implementation manner of the first gate voltage division driving circuit is that the first gate voltage division driving circuit includes: four high frequency diodes, transient suppression diode 48 and gate drive circuit resistance;
the cathode of the first high-frequency diode 42 is connected to the anode of the second high-frequency diode 44 and then to the positive terminal of the coil, and the anode of the first high-frequency diode 42 is connected to one end of the first gate drive circuit resistor 43; after the second high-frequency diode 44, the third high-frequency diode 45 and the fourth high-frequency diode 46 are connected in series in the same phase, the cathode of the fourth high-frequency diode 46 is connected to one end of the second gate driving circuit resistor 47, and the other end of the second gate driving circuit resistor 47 is connected to the other end of the first gate driving circuit resistor 43 and to the gate of the transistor 410 (i.e., the synchronous rectification transistors 210, 211, 212 and 213 and the half-bridge transistors 111 and 112); with the transient suppression diode 48 and the third gate drive circuit resistor 49 connected in parallel, the cathode of the transient suppression diode 48 is connected to the other end of the second gate drive circuit resistor 47 and the anode of the transient suppression diode 48 is connected to the negative terminal of the coil and to the source of the transistor 410.
Specifically, the number of two high-frequency diodes in the first gate voltage division driving circuit can be determined according to actual requirements, and the first gate voltage division driving circuit enables the on-state voltage of the transistor 410 to be lower than the off-state voltage by two diode drops, for example, for the driving of a gallium nitride transistor of GS66508 model, the forward withstand voltage is 7V, the reverse withstand voltage is-10V, and the positive and negative voltages of the same driving signal reaching the gate sources are different, in this embodiment, the positive voltage is set to be 5V, and the negative voltage is greater than the positive voltage by two diode drops, that is, the negative voltage is-6.2V, so that the saturated on and the fast off of the transistor 410 are realized, and the voltage tolerance design between the gate sources is ensured.
Adjusting the second gate driving circuit resistor 37 can change the conducting front edge of the transistor 410 if the gate-source parasitic capacitance of the transistor 410 is CgsThe resistance of the second gate driving circuit resistor 47 is RgThe positive voltage of the signal SsX (X ═ 1,2, … 6) isvgThe gate-source voltage of the transistor 410 is v0Then, there is the following relationship in the rising process because the third gate driving circuit resistor 49 has a larger resistance value, and the voltage division effect of the second gate driving circuit resistor 47 and the third gate driving circuit resistor 49 is neglected.
In the formula, vthTo turn on the threshold voltage of the transistor, τ is the transistor turn on front time.
The resistance of the second gate driving circuit resistor 47 can be adjusted to be RgAnd the size of the transistor is larger than the threshold value, so that the control of tau is realized, when tau is too small, the ringing of a driving signal of the transistor is serious, and when tau is too large, the switching loss of the transistor 410 is too large.
Similarly, the control of the turned-off trailing edge of the transistor can be realized by adjusting the resistance of the first gate driving circuit resistor 43.
In this embodiment, the input end of the LCT integrated magnetic element is connected to the two output ends of the symmetric half-bridge circuit, and the output end of the LCT integrated magnetic element is connected to the input end of the rectifier circuit, wherein the parasitic capacitance of the LCT integrated magnetic element is connected to the first output end of the symmetric half-bridge circuit, and the primary planar winding of the LCT integrated magnetic element is connected to the second output end of the symmetric half-bridge circuit;
specifically, the parasitic capacitance of the LCT integrated magnetic element is used as the resonant capacitance in the LC resonant circuit, and the parasitic inductance of the LCT integrated magnetic element is used as the resonant inductance in the LC resonant circuit, so as to form the LC resonant circuit.
The first half-bridge transistor 111, the second half-bridge transistor 112, two half-bridge voltage-sharing capacitors and two half-bridge voltage-sharing resistors form a symmetrical half-bridge circuit, wherein the drain of the first half-bridge transistor 111 is connected with the positive end of the input direct-current power Vin, namely the positive input end of the symmetrical half-bridge circuit, the source of the second half-bridge transistor 112 is connected with the negative end of the input direct-current power Vin, namely the negative input end of the symmetrical half-bridge circuit, one end of the first half-bridge voltage-sharing capacitor 116 is connected with the positive end of the input direct-current power Vin after being connected in parallel with the first half-bridge voltage-sharing resistor 118, the other end of the first half-bridge voltage-sharing capacitor is connected with one end of the second half-bridge voltage-sharing resistor 119 in parallel, the other end of the first half-bridge voltage-sharing capacitor 116 is connected with the negative end of the input direct-current power Vin, and a voltage-sharing point of 1/2 for sharing the input voltage is formed on the first half-bridge voltage-sharing capacitor 116 and the second half-bridge voltage-sharing capacitor 117. The connection point of the source of the first half-bridge transistor 111 and the drain of the second half-bridge transistor 112 serves as a first output end of the symmetric half-bridge circuit, and the connection point of the first half-bridge voltage-sharing capacitor 116 and the second half-bridge voltage-sharing capacitor 117 serves as a second output end of the symmetric half-bridge circuit.
A rectifying circuit is composed of a first full-bridge synchronous rectifying transistor 210, a second full-bridge synchronous rectifying transistor 211, a third full-bridge synchronous rectifying transistor 212, a fourth full-bridge synchronous rectifying transistor 213 and a filter capacitor 214, wherein the source of the first full-bridge synchronous rectifying transistor 210 is connected with the drain of the second full-bridge synchronous rectifying transistor 211, the source of the third full-bridge synchronous rectifying transistor 212 is connected with the drain of the fourth full-bridge synchronous rectifying transistor 213, the drain of the first full-bridge synchronous rectifying transistor 210 is connected with the drain of the third full-bridge synchronous rectifying transistor 212 and then connected with one end of the filter capacitor 214 as the positive end of the output DC power supply, the source of the second synchronous full-bridge rectifying transistor 211 is connected with the source of the fourth full-bridge synchronous rectifying transistor 213 and then connected with the other end of the filter capacitor 214 as the negative end of the output DC power supply, the positive end, the negative end, the positive end, the negative end, and the negative end of the output DC power supply, The negative terminal is connected to a load 216.
The technical solution of the present application is described in detail above with reference to the accompanying drawings, and the present application provides an LCT integrated magnetic element of a sinusoidal power converter, where the magnetic element includes a first high-frequency transformer primary planar winding, a second high-frequency transformer primary planar winding, and a high-frequency transformer secondary planar winding, and the magnetic element further includes: parasitic capacitance and parasitic inductance; the parasitic capacitor is closely coupled below the primary planar winding of the first high-frequency transformer and above the primary planar winding of the second high-frequency transformer; and the parasitic inductance is closely coupled below the primary planar winding of the second high-frequency transformer and above the secondary planar winding of the high-frequency transformer, wherein the parasitic capacitance and the parasitic inductance form an LC series resonance circuit. Through the technical scheme in the application, the resonant capacitor, the resonant inductor and the high-frequency transformer are integrally designed by using one magnetic loop, the size of the LCT element is greatly reduced, the parasitic parameters of the LCT element are utilized, and the power density of the sinusoidal power converter is improved.
The steps in the present application may be sequentially adjusted, combined, and subtracted according to actual requirements.
The units in the device can be merged, divided and deleted according to actual requirements.
Although the present application has been disclosed in detail with reference to the accompanying drawings, it is to be understood that such description is merely illustrative and not restrictive of the application of the present application. The scope of the present application is defined by the appended claims and may include various modifications, adaptations, and equivalents of the invention without departing from the scope and spirit of the application.
Claims (7)
1. A symmetric half-bridge LC series resonant sinusoidal power conversion circuit, said power conversion circuit comprising an LC series resonant circuit and a high frequency transformer, said LC series resonant circuit and said high frequency transformer being comprised of LCT integrated magnetics, said LCT integrated magnetics comprising: a first high frequency transformer primary planar winding, a second high frequency transformer primary planar winding, and a high frequency transformer secondary planar winding, the magnetic element further comprising: parasitic capacitance and parasitic inductance;
the parasitic capacitance is closely coupled below the first high-frequency transformer primary planar winding and above the second high-frequency transformer primary planar winding;
the parasitic inductor is closely coupled below the primary planar winding of the second high-frequency transformer and above the secondary planar winding of the high-frequency transformer, wherein the parasitic capacitor and the parasitic inductor form an LC series resonant circuit;
wherein the power conversion circuit further comprises: a sine conversion control circuit;
the sine conversion control circuit comprises a pulse width controller, a gate driver and an isolation transformer which are sequentially communicated, wherein the pulse width controller is an open-loop controller, the driving voltage frequency and the conducting pulse width of the pulse width controller are determined by the resonance parameters of the LC series resonance circuit, the secondary end of the isolation transformer is provided with a coil,
the first output end of the isolation transformer is provided with two grid voltage division driving circuits, and each grid voltage division driving circuit comprises: four high frequency diodes, transient suppression diodes and three gate drive circuit resistors, wherein,
the cathode of the first high-frequency diode is connected with the anode of the second high-frequency diode and then connected to the positive end of the coil, and the anode of the first high-frequency diode is connected with one end of the first grid drive circuit resistor;
after the second high-frequency diode, the third high-frequency diode and the fourth high-frequency diode are connected in series in the same phase, the cathode of the fourth high-frequency diode is connected to one end of a second grid drive circuit resistor, and the other end of the second grid drive circuit resistor is connected with the other end of the first grid drive circuit resistor and connected to the grid of the transistor;
after the transient suppression diode and the third gate drive circuit resistor are connected in parallel, the cathode of the transient suppression diode is connected to the other end of the second gate drive circuit resistor, and the anode of the transient suppression diode is connected to the negative end of the coil and to the source of the transistor.
2. The symmetric half-bridge LC series resonant sinusoidal power conversion circuit of claim 1, further comprising: a symmetrical half-bridge circuit, a rectifier circuit;
the input end of the LCT integrated magnetic element is connected with the two output ends of the symmetrical half-bridge circuit, and the output end of the LCT integrated magnetic element is connected with the input end of the rectifying circuit, wherein the parasitic capacitance of the LCT integrated magnetic element is connected with the first output end of the symmetrical half-bridge circuit, and the primary planar winding of the LCT integrated magnetic element is connected with the second output end of the symmetrical half-bridge circuit;
the first output end of the isolation transformer is connected with the control end of the symmetrical half-bridge circuit, the second output end of the isolation transformer is connected with the control end of the rectifying circuit,
and the sine conversion control circuit is used for sending a conduction instruction to the symmetrical half-bridge circuit and the rectifying circuit.
3. The symmetric half-bridge LC series-resonant sinusoidal power conversion circuit of claim 2, wherein the symmetric half-bridge circuit comprises two half-bridge transistors, the rectifier circuit comprises four full-bridge synchronous rectifier transistors, and the two gate voltage divider driving circuits of the first output terminal of the isolation transformer are sequentially connected to the gate of the first half-bridge transistor and the gate of the second half-bridge transistor;
the second output end of the isolation transformer is provided with four grid voltage division driving circuits which are sequentially connected with the grids of the full-bridge synchronous rectification transistors.
4. The symmetric half-bridge LC series-resonant sinusoidal power conversion circuit of claim 1, wherein the primary planar winding of the first high frequency transformer is comprised of three layers of printed circuit boards, the printed circuit boards having a first buried via interlayer transition region, two adjacent layers of printed circuit boards being interconnected by the first buried via interlayer transition region, each layer of printed circuit board having one turn of winding tracks printed thereon.
5. The symmetric half-bridge LC series-resonant sinusoidal power conversion circuit of claim 4, wherein the secondary high frequency transformer primary planar winding is comprised of three layers of printed circuit boards, each printed circuit board having one turn of winding traces printed thereon, the winding traces of the primary high frequency transformer primary planar winding of the first layer of printed circuit board having the same shape as the winding traces of the primary high frequency transformer primary planar winding of the third layer of printed circuit board.
6. The symmetric half-bridge LC series-resonant sinusoidal power conversion circuit of claim 5, wherein the secondary planar winding of the high frequency transformer is comprised of two layers of printed circuit boards, the printed circuit boards having a third buried via interlayer transition region, the two layers of printed circuit boards being connected in parallel via the third buried via interlayer transition region, each layer of printed circuit board having one turn of winding tracks printed thereon, the winding tracks on the two layers of printed circuit boards being identical in shape.
7. The symmetric half-bridge LC series-resonant sinusoidal power conversion circuit of claim 1, wherein said magnetics components are provided with core vias, said magnetics components further comprising EI-type cores passing through said core vias through said first high frequency transformer primary planar winding, said second high frequency transformer primary planar winding and said parasitic capacitances.
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