CN110854133B - 显示面板的制备方法及显示面板 - Google Patents
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Abstract
本发明提供了一种显示面板的制备方法及显示面板，在显示面板正面制程完成时，引入了保护层、牺牲层、平坦化层以及钝化层的结构作为保护膜，该保护膜膜层结构设计不会对CVD、PVD等真空设备造成污染，以及具有硬性耐磨特性，该膜层不会残留在传输机台上，因此不会干扰到背面制程。同时常规CVD和涂布机台成膜时，膜层表面平坦度有利于传送吸附，可通过激光及干刻完整的去除保护膜，该工艺方法可有效实现单玻璃的双面制程。
Description
技术领域
本发明涉及显示技术领域，特别是一种显示面板的制备方法及显示面板。
背景技术
液晶显示器(Liquid Crystal Display，LCD)是把液晶封装在阵列基板和彩膜基板间，控制每个像素的通电，来使液晶发生偏转控制背光通过实现画面显示。由于液晶的封装需要边框框胶，所以LCD在无边框及拼接显示上具有一定的局限性。相比LCD，OLED和micro led显示通过面板自发光技术，不需要背光及上下基板封装，理论上可做到无边框显示及无缝拼接显示。
有机发光二极管(Organic Light-Emitting Diode,OLED)和Micro Led虽然无需边框进行封装，但基于驱动需求，在显示区域***需布置走线及绑定的位置，这样同样会在面板上出现显示区域外的面积，从而不能实现无边框显示及无缝拼接。玻璃双面制程是将面板显示区域外的走线、绑定区的位置等集成到显示面板背部的技术，可有效实现全面屏显示、无边框显示、无缝拼接等技术。双面玻璃制程技术要求在玻璃的两面进行成膜、曝光、显影、刻蚀等工艺，在现有单面工艺的基础增加了难度，其中一面玻璃(正面)制程完成后在进行另一面玻璃(反面)制程时对正面膜层的保护就是个难点。现有方法通常为在正面制程完成后贴附一层保护胶或保护膜，但保护胶/保护膜在后续的去保护剥离后常会有胶残留，且保护胶/保护膜等有机膜的玻璃转化温度低，不利于后续反面玻璃的物理气相沉积或化学气相沉积等制程。
因此，急需提供一种新的显示面板的制备方法及显示面板，可以在进行双面制备的时候提供一保护膜，并且保护膜去除后并不影响后续的物理气相沉积或化学气相沉积等制程。
发明内容
本发明的目的是，提供了一种显示面板的制备方法及由所述制备方法制备的显示面板，在显示面板正面制备完成时，引入了保护层、牺牲层以及钝化层的结构作为保护膜，该保护膜膜层结构设计不会对CVD、PVD等真空设备造成污染，以及具有硬性耐磨特性，该膜层不会残留在传输机台上，因此不会干扰到背面制程。
为达到上述目的，本发明提供一种显示面板的制备方法，包括：提供一阵列基板；沉积一保护层于所述阵列基板上；沉积一牺牲层于所述保护层上；沉积一平坦化层于所述牺牲层上；沉积一钝化层于所述平坦化层上；翻转所述阵列基板；沉积并图案化一金属线于所述阵列基板远离所述电极保护层的一侧；沉积一介质层于所述阵列基板远离所述电极保护层的一侧且包覆所述金属线；形成一透明电极于所述介质层远离所述阵列基板的一侧，所述透明电极连接所述金属线；涂布一光刻胶于所述介质层远离所述阵列基板的一侧且覆盖所述透明电极；再次翻转所述阵列基板；去除所述钝化层、所述平坦化层、所述保护层、所述电极保护层以及所述光刻胶。
进一步地，所述电极保护层的材料包括氮化硅、氧化硅、氧化铝或二氧化铪。
进一步地，所述保护层的材料为氢化非晶硅。
进一步地，所述平坦化层的材料包括耐高温的聚酰亚胺、硅胶或压克力。
进一步地，所述钝化层的材料包括氮化硅、氧化硅、氧化铝或二氧化铪。
进一步地，所述介质层的材料包括氮化硅、氧化硅、氧化铝或二氧化铪。
进一步地，在所述沉积一介质层于所述阵列基板远离所述保护层的一侧且包覆所述金属线步骤后：还包括：形成一通孔于所述介质层中，所述通孔贯穿所述介质层直至所述金属线表面，所述透明电极通过所述通孔连接所述金属线。
进一步地，在去除所述钝化层、所述平坦化层的步骤中，通过激光剥离方式去除所述钝化层以及所述平坦化层；通过干法蚀刻的方式去除所述保护层以及所述电极保护层；通过浸泡剥离液的方式去除所述光刻胶。
本发明还提供一种显示面板，由前文所述的显示面板的制备方法制备。
进一步地，包括：基板；薄膜晶体管层，设于所述基板的一侧；像素电极，设于所述薄膜晶体管层上，所述像素电极连接所述薄膜晶体管层；金属线，设于所述阵列基板的背面；介质层，设于所述金属线上且贴附所述阵列基板的背面；透明电极，设于所述介质层上且连接所述金属线。
本发明的有益效果是：本发明提供了一种显示面板的制备方法及显示面板，在显示面板正面完成时，引入了保护层、牺牲层、平坦化层以及钝化层的结构作为保护膜，该保护膜膜层结构设计不会对CVD、PVD等真空设备造成污染，以及具有硬性耐磨特性，该膜层不会残留在传输机台上，因此不会干扰到背面制程。同时常规CVD和涂布机台成膜时，膜层表面平坦度有利于传送吸附，可通过激光及干刻完整的去除保护膜。该工艺方法可有效实现单玻璃的双面制程。
附图说明
下面结合附图和实施例对本发明作进一步的描述。
图1为本发明提供的阵列基板的结构示意图；
图2为本发明提供的显示面板的接触保护层、保护层、平坦化层以及钝化层结构示意图；
图3为本发明提供的显示面板的金属线、介质层以及透明电极的结构示意图；
图4为本发明提供的通过显示面板的制备方法制备得到的显示面板的结构示意图；
阵列基板100；
基板101；缓冲层102；薄膜晶体管层103
像素电极104；有源层1031；遮光层1021；
保护层105；牺牲层106；钝化层108；
平坦化层107；金属线109；介质层110；
透明电极111；光刻胶112；通孔1101。
具体实施方式
为了更好地理解本发明的内容，下面通过具体的实施例对本发明作进一步说明，但本发明的实施和保护范围不限于此。
以下实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「顶」、「底」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
本发明提供一种显示面板的制备方法，在一实施例中，具体包括如下步骤：
S1)如图1所示，提供一阵列基板100；所述阵列基板100包括基板101，薄膜晶体管层103以及像素电极104。
所述基板101与所述薄膜晶体管层103之间设有一缓冲层102，所述缓冲层102中设有一遮光层1021且对应所述薄膜晶体管层103。
所述薄膜晶体管层103设于所述阵列基板100上，所述薄膜晶体管为顶栅结构。所述薄膜晶体管层103具有一有源层1031，所述有源层1031的材料包括IGZO、ZnO、ZTO、IGZTO、a-Si、LTPS以及碳纳米管。
所述像素电极104设于所述薄膜晶体管层103远离所述基板101的一侧，所述像素电极104连接所述薄膜晶体管层103。
S2)如图2所示，沉积保护层105于所述阵列基板100上；具体的说，所述保护层105设于所述薄膜晶体管层103上且包覆所述像素电极104，所述保护层105用以作为所述像素电极104的保护层。
所述保护层105的材料包括氮化硅、氧化硅、氧化铝或二氧化铪。
S3)沉积一牺牲层106于所述保护层105上；具体地说，所述牺牲层106设于所述保护层105远离所述薄膜晶体管层103的一侧。
所述牺牲层106的材料为氢化非晶硅。
S4)沉积一平坦化层107于所述牺牲层106上；所述平坦化层107的材料包括耐高温的聚酰亚胺、硅胶或压克力。
所述平坦化层107用以使所述牺牲层106平坦化，有利于在显示面板的制备过程中的传送吸附。
S5)涂布一钝化层108于所述平坦化层107上；所述钝化层108的材料包括氮化硅、氧化硅、氧化铝或二氧化铪。
所述钝化层108可以为单层或多层结构，用以对所述平坦化层107进行隔绝保护。
本发明显示面板的正面制作中引入了保护层105,、牺牲层106、平坦化层107以及钝化层108的保护膜结构，该保护膜膜层结构设计不会对CVD、PVD等真空设备造成污染，以及具有硬性耐磨特性，不会对传输机台造成剥离残留且膜层不会干扰到面板背面制程。
S6)如图3所示，翻转所述阵列基板100；对显示面板的背面进行制备。
S7)沉积并图案化一金属线109于所述阵列基板100远离所述保护层105的一侧，具体的讲，所述金属线109设于所述基板101远离所述薄膜晶体管层103的一侧。
S8)沉积一介质层110于所述阵列基板100远离所述保护层105的一侧且包覆所述金属线109。
所述介质层110的材料包括氮化硅、氧化硅、氧化铝或二氧化铪。
在所述沉积一介质层110于所述阵列基板100远离所述牺牲层106的一侧且包覆所述金属线109步骤后：还包括：
形成一通孔1101于所述介质层110中，所述通孔1101贯穿所述介质层110直至所述金属线109表面。
S9)形成一透明电极111于所述介质层110远离所述阵列基板100的一侧，所述透明电极111通过所述通孔1101连接所述金属线109。
S10)涂布一光刻胶112于所述介质层110远离所述阵列基板100的一侧且覆盖所述透明电极111。所述光刻胶112用以保护所述金属线109，免受后续工艺制程影响。
S11)再次翻转所述阵列基板100。
S12)去除所述钝化层108、所述平坦化层107、所述牺牲层106、所述保护层105以及所述光刻胶112后，形成如图4所示的显示面板。
在去除所述钝化层108、所述平坦化层107的步骤中，通过激光剥离方式去除所述钝化层108以及所述平坦化层107。
在去除所述牺牲层106、所述保护层105的步骤中，通过干法蚀刻的方式去除所述牺牲层106以及所述保护层105。
在去除所述光刻胶112的步骤中，通过浸泡剥离液的方式去除所述光刻胶112。
本发明提供了一种显示面板的制备方法，在显示面板正面制备的时候，引入了保护层105，牺牲层106、平坦化层107以及钝化层108的结构作为保护膜，该保护膜膜层结构设计不会对CVD、PVD等真空设备造成污染，以及具有硬性耐磨特性，该膜层不会残留在传输机台上，因此不会干扰到背面制程。同时常规CVD和涂布机台成膜时，膜层表面平坦度有利于传送吸附，可通过激光及干刻完整的去除保护膜。该工艺方法可有效实现单玻璃的双面制程。
如图4所示，本发明还提供一种显示面板，由上述显示面板的制备方法制备得到。
所述显示面板包括：基板101，薄膜晶体管层103，像素电极104，金属线109，介质层110以及透明电极111。
在基板101的正面，所述薄膜晶体管层103设于所述基板101的一侧；所述像素电极111设于所述薄膜晶体管层103远离所述基板101的一侧，所述像素电极104连接所述薄膜晶体管层103。
在基板101的背面，所述金属线109设于所述基板101远离所述薄膜晶体管层103的一侧；所述介质层110设于所述基板101以及所述金属线109上；所述透明电极111设于所述介质层110上且连接所述金属线109。
应当指出，对于经充分说明的本发明来说，还可具有多种变换及改型的实施方案，并不局限于上述实施方式的具体实施例。上述实施例仅仅作为本发明的说明，而不是对本发明的限制。总之，本发明的保护范围应包括那些对于本领域普通技术人员来说显而易见的变换或替代以及改型。
Claims (10)
1.一种显示面板的制备方法，其特征在于，包括：
提供一阵列基板；
在阵列基板正面沉积一保护层于所述阵列基板上；
沉积一牺牲层于所述保护层上；
涂布一平坦化层于所述牺牲层上；
沉积一钝化层于所述平坦化层上，所述牺牲层、所述平坦化层以及所述钝化层具有硬性耐磨特性；
翻转所述阵列基板；
沉积并图案化一金属线于所述阵列基板远离所述保护层的一侧；
沉积一介质层于所述阵列基板远离所述保护层的一侧且包覆所述金属线；
形成一透明电极于所述介质层远离所述阵列基板的一侧，所述透明电极连接所述金属线；
涂布一光刻胶于所述介质层远离所述阵列基板的一侧且覆盖所述透明电极；
再次翻转所述阵列基板；
去除所述钝化层、所述平坦化层、所述牺牲层、所述保护层以及所述光刻胶。
2.根据权利要求1所述的显示面板的制备方法，其特征在于，所述保护层的材料包括氮化硅、氧化硅、氧化铝或二氧化铪。
3.根据权利要求1所述的显示面板的制备方法，其特征在于，所述牺牲层的材料为氢化非晶硅。
4.根据权利要求1所述的显示面板的制备方法，其特征在于，所述平坦化层的材料包括耐高温的聚酰亚胺、硅胶或压克力。
5.根据权利要求1所述的显示面板的制备方法，其特征在于，所述钝化层的材料包括氮化硅、氧化硅、氧化铝或二氧化铪。
6.根据权利要求1所述的显示面板的制备方法，其特征在于，所述介质层的材料包括氮化硅、氧化硅、氧化铝或二氧化铪。
7.根据权利要求1所述的显示面板的制备方法，其特征在于，在所述的沉积一介质层于所述阵列基板远离所述保护层的一侧且包覆所述金属线的步骤之后：还包括：
形成一通孔于所述介质层中，所述通孔贯穿所述介质层直至所述金属线表面，所述透明电极通过所述通孔连接所述金属线。
8.根据权利要求1所述的显示面板的制备方法，其特征在于，在所述的去除所述钝化层、所述平坦化层、所述保护层以及所述光刻胶的步骤中，
通过激光剥离方式去除所述钝化层以及所述平坦化层；
通过干法蚀刻的方式去除所述牺牲层以及所述保护层；
通过浸泡剥离液的方式去除所述光刻胶。
9.一种采用如权利要求1～8任一项所述的显示面板的制备方法制备的显示面板。
10.根据权利要求9所述的显示面板，其特征在于，包括：
基板；
薄膜晶体管，设于所述基板的一侧；
像素电极，设于所述薄膜晶体管上，所述像素电极连接所述薄膜晶体管漏极；
金属线，设于所述阵列基板的背面；
介质层，设于所述金属线上且贴附所述阵列基板的背面；
透明电极，设于所述介质层上且连接所述金属线。
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