CN110850686A - Method for attaching photoetching plate and silicon wafer and photoetching machine - Google Patents
Method for attaching photoetching plate and silicon wafer and photoetching machine Download PDFInfo
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- CN110850686A CN110850686A CN201911173826.7A CN201911173826A CN110850686A CN 110850686 A CN110850686 A CN 110850686A CN 201911173826 A CN201911173826 A CN 201911173826A CN 110850686 A CN110850686 A CN 110850686A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention discloses a method for attaching a photoetching plate and a silicon wafer and a photoetching machine. A method for jointing a photoetching plate and a silicon wafer is used for realizing the jointing of the photoetching plate and the silicon wafer, wherein the photoetching plate and/or the silicon wafer float, and vacuum is communicated between the photoetching plate and the silicon wafer for adsorption jointing; a photoetching machine comprises a photoetching plate which is connected with a rack in a floating mode, wherein an object carrying part can move relative to the photoetching plate to enable a silicon wafer on the object carrying part to be attached to the photoetching plate; a photoetching machine is characterized in that a photoetching plate is connected to a frame in a floating manner; the object carrying part is provided with a second sealing part which is arranged around the silicon chip; when the object carrying part moves to enable the silicon wafer to be attached to the photoetching plate, a vacuum adsorption area is formed between the second sealing part and the photoetching plate, and the silicon wafer is accommodated in the vacuum adsorption area; vacuum is formed between the photoetching plate and the silicon wafer to enable the photoetching plate to be attached to the silicon wafer, so that the silicon wafer and the photoetching plate are tightly attached, and the photoetching position precision of the silicon wafer is guaranteed.
Description
Technical Field
The invention relates to a method for attaching a photoetching plate and a silicon wafer and a photoetching machine, belonging to the field of photoetching machines.
Background
When the silicon wafer is subjected to photoetching treatment, the silicon wafer needs to be tightly attached to a photoetching plate so as to ensure the photoetching position precision of the silicon wafer; the conventionally used protocols are: horizontally arranging a silicon wafer, horizontally arranging a photoetching plate, and then adhering the silicon wafer to the photoetching plate along the vertical direction, wherein the adhering error is larger due to the accumulation of horizontal errors of the silicon wafer and the photoetching plate; the silicon chip or the photoetching plate is elastically connected, so that the silicon chip is prevented from abutting against the photoetching plate and automatically attached by utilizing the elastic connection to ensure even stress, and the position is unstable due to the elastic connection in the scheme.
Disclosure of Invention
In order to solve the technical problem, the invention provides a method for bonding a photoetching plate and a silicon wafer and a photoetching machine.
The technical scheme of the invention is as follows: a method for bonding a photoetching plate and a silicon wafer is used for bonding the photoetching plate and the silicon wafer,
the photoetching plate and/or the silicon wafer float, and vacuum is communicated between the photoetching plate and the silicon wafer for adsorption and bonding.
Furthermore, the vacuum adsorption area surrounds the bonding area of the photoetching plate and the silicon wafer, and the vacuum adsorption area is communicated with the bonding area.
Furthermore, the silicon chip is connected to the elastic part, and one side of the elastic part, which is far away from the silicon chip, is connected to the loading part.
Further, the elastic part is vacuum-adsorbed on the loading part.
Further, the silicon wafer is attached to the elastic part by vacuum suction.
Furthermore, the carrying part is provided with M vacuum holes connected with a vacuum control part, and the elastic part is provided with N through holes; the N vacuum holes on the loading part are communicated with the N through holes on the elastic part; the other M-N vacuum holes are used for adsorbing the elastic part on the loading part; m and N are positive integers, M is larger than N, and N is larger than/equal to 1.
Furthermore, the elastic part is provided with a first sealing part which can be stopped against the photoetching plate; the silicon wafer placed on the elastic part corresponds to P through holes in the elastic part, the P through holes are used for adsorbing the silicon wafer on the elastic part, P is smaller than N, and the rest N-P through holes are used for adsorbing the photoetching plate and enabling the photoetching plate to be attached to the silicon wafer; the first sealing part surrounds the silicon wafer 30; m is more than 2, N is more than or equal to 2, P is more than 1, and M is more than N.
Further, N-P through holes for enabling the photoetching plate to be attached to the silicon wafer are connected to a first vacuum pump; the P through holes are used for adsorbing the silicon wafer on the elastic part and are connected with a second vacuum pump; M-N vacuum holes for adsorbing the elastic part to the loading part are connected to a third vacuum pump.
Further, the carrying part is provided with a second sealing part which surrounds the elastic part; the silicon chip is positioned in a vacuum adsorption area formed between the second sealing part and the photoetching plate.
Furthermore, the photoetching plate is connected with the first connecting portion in a vacuum adsorption mode, the first connecting portion is connected with the rack in a floating mode, the carrying portion can move towards the first connecting portion to enable the silicon wafer to be abutted against the photoetching plate, and the second sealing portion is abutted against the first connecting portion to form a vacuum adsorption area.
A lithography machine comprises a substrate, a first substrate,
the object carrying part can move relative to the photoetching plate so that the silicon wafer on the object carrying part is attached to the photoetching plate.
Furthermore, the elastic part is arranged on the object carrying part; the silicon chip is vacuum-adsorbed on the elastic part.
Furthermore, the elastic part is provided with a first sealing part, the first sealing part is stopped against the photoetching plate to form a vacuum adsorption area, the photoetching plate is attached to the silicon wafer, and the silicon wafer is accommodated in the vacuum adsorption area.
Further, the elastic part is a silica gel pad; the first sealing part is a silica gel ring.
Furthermore, the carrying part is provided with M vacuum holes; n through holes arranged on the elastic part are communicated with N vacuum holes on the loading part, and the N through holes are positioned in a region surrounded by the first sealing part; the other M-N vacuum holes are used for adsorbing the elastic part on the loading part, and M is larger than or equal to N.
Furthermore, P through holes in the elastic part are used for adsorbing the silicon wafer to the elastic part, the rest N-P through holes are communicated with the vacuum adsorption area and can generate vacuum to enable the photoetching plate to be attached to the silicon wafer, and N is larger than P.
Further, the M vacuum holes are connected to a vacuum control part.
Further, N-P through holes for enabling the photoetching plate to be attached to the silicon wafer are connected to a first vacuum pump; the P through holes are used for adsorbing the silicon wafer on the elastic part and are connected with a second vacuum pump; M-N vacuum holes for adsorbing the elastic part to the loading part are connected to a third vacuum pump.
Furthermore, the photoetching plate is connected to a first connecting part in a vacuum adsorption mode, and the first connecting part is connected to the rack through a spring.
Further, the exposure lamp is arranged on the frame and is positioned on one side of the photoetching plate, which is far away from the silicon wafer; and light rays emitted by the exposure lamp penetrate through the photoetching plate along the direction vertical to the photoetching plate to reach the silicon wafer.
A photoetching machine is characterized in that a photoetching plate is connected to a frame in a floating manner; the object carrying part is provided with a second sealing part which is arranged around the silicon chip; when the object carrying part moves to enable the silicon wafer to be attached to the photoetching plate, a vacuum adsorption area is formed between the second sealing part and the photoetching plate, and the silicon wafer is contained in the vacuum adsorption area.
Furthermore, the silicon chip is arranged on the loading part through an elastic part.
Further, the second sealing portion surrounds the elastic portion.
Further, the carrying part is provided with a laminating air guide hole, and the laminating air guide hole is communicated with the vacuum adsorption area.
Furthermore, the photoetching plate is connected to a first connecting part in a vacuum adsorption mode, and the first connecting part is connected to the rack through a spring.
Furthermore, the second sealing part is stopped against the first connecting part to form a vacuum adsorption area.
Furthermore, the elastic part is a silica gel pad.
Further, the exposure lamp is arranged on the frame and is positioned on one side of the photoetching plate, which is far away from the silicon wafer; and light rays emitted by the exposure lamp penetrate through the photoetching plate along the direction vertical to the photoetching plate to reach the silicon wafer.
Further, the silicon wafer is horizontally arranged, and the exposure lamp is vertically arranged along the direction perpendicular to the silicon wafer.
The invention has the beneficial effects that: vacuum is formed between the photoetching plate and the silicon wafer to enable the photoetching plate to be attached to the silicon wafer, so that the silicon wafer and the photoetching plate are tightly attached, and the photoetching position precision of the silicon wafer is guaranteed.
Drawings
FIG. 1 is a schematic view of a lithography machine provided with a second sealing portion, with a silicon wafer separated from a lithography plate;
FIG. 2 is a schematic view of a lithography machine with a second sealing portion, a silicon wafer and a lithography plate being bonded together;
FIG. 3 is a schematic diagram illustrating the bonding of a silicon wafer and a photolithography plate;
FIG. 4 is a schematic view of the vacuum holes provided in the loading part;
FIG. 5 is a schematic view of the elastic portion connected to the loading portion;
FIG. 6 is a schematic view of a lithography machine with a first sealing portion, a silicon wafer and a lithography plate being bonded together;
FIG. 7 is an enlarged view of a portion of FIG. 6;
FIG. 8 is a schematic view of a lithography machine with a second seal portion, a plurality of vacuum holes respectively connected to a first vacuum pump, a second vacuum pump and a third vacuum pump;
FIG. 9 is a schematic view of a silicon wafer connected to a loading part through an elastic part;
FIG. 10 is a schematic view of a lithography machine with a first seal portion, a plurality of vacuum holes respectively connected to a first vacuum pump, a second vacuum pump, and a third vacuum pump.
Detailed Description
In order to facilitate the understanding of the technical solutions of the present invention by those skilled in the art, the technical solutions of the present invention will be described in further detail with reference to specific examples.
As shown in fig. 2, 6 and 7, a method for attaching a photolithography mask to a silicon wafer is used to attach a photolithography mask 20 to a silicon wafer 30, so as to improve the line precision of photolithography on the silicon wafer 30;
the photoetching plate 20 and/or the silicon wafer 30 float, so that the photoetching plate 20 and the silicon wafer 30 can be attached to each other on a contact surface when being stopped; the floating is different from the conventional linear motion stopping in that when two planes are contacted, the two planes can realize the function of plane fitting in order to meet the uniform stress; vacuum is communicated between the photoetching plate 20 and the silicon wafer 30 for adsorption and lamination, and the contact surface between the photoetching plate 20 and the silicon wafer 30 is in vacuum atmosphere, so that the photoetching plate 20 and the silicon wafer 30 are tightly laminated together, and the photoetching plate 20 and the silicon wafer 30 are stably and reliably laminated because of being in a vacuum environment.
By adopting the technical scheme, the photoetching plate 20 and the silicon wafer 30 are tightly attached to each other by utilizing vacuum, so that the attaching precision between the photoetching plate 20 and the silicon wafer 30 is ensured, and the position of the line on the photoetching plate 20 corresponding to the silicon wafer 30 is ensured to be stable and reliable.
As shown in fig. 2, 3, 6 and 7, the vacuum absorption region 40 surrounds the bonding region 2030 of the photolithography plate 20 and the silicon wafer 30, and the vacuum absorption region 40 is communicated with the bonding region 2030; the photoetching plate 20 and the silicon wafer 30 are not easy to separate due to external force after being bonded, so that the bonding stability is ensured; specifically, when the area of the silicon wafer 30 is smaller than that of the photolithography plate 20, the silicon wafer 30 is completely attached to the photolithography plate 20 near the center, so that the vacuum adsorption region 40 surrounds the silicon wafer 30, and because the contact surface between the photolithography plate 20 and the silicon wafer 30 cannot enter air, relative motion cannot be generated between the photolithography plate 20 and the silicon wafer 30, and the attachment stability between the photolithography plate 20 and the silicon wafer 30 is ensured; similarly, when the area of the silicon wafer 30 is larger than or equal to the area of the photolithography plate 20, the bonding is stable and reliable because air cannot enter; while also reducing the variability of the reticle 20 or the silicon wafer 30 (with a larger area), for example, if the reticle 20 has a larger area, the vacuum absorption region 40 acting on the reticle 20 may cause the reticle 20 to deform at the center of the attachment region 2030, which may cause the reticle 20 to deform too much and damage if the vacuum absorption region 40 is isolated from the attachment region 2030.
By adopting the technical scheme, the vacuum adsorption area 40 is communicated with the bonding area 2030, so that the bonding between the photoetching plate 20 and the silicon wafer 30 is in a vacuum atmosphere and is not easy to generate relative motion, and the bonding position is stable and reliable.
As shown in fig. 1, 2, 6 and 8, the silicon wafer 30 is connected to the elastic part 50, and the side of the elastic part 50 away from the silicon wafer 30 is connected to the loading part 60, where the elastic part 50 can be adhered to the loading part 60 by adhesive, and the elastic part 50 is vacuum-adsorbed on the loading part 60; the silicon chip 30 is elastically connected with the object carrying part 60, so that the silicon chip 30 is prevented from being damaged by the extrusion of the photoetching plate 20 when the rigid object carrying part 60 is directly arranged; meanwhile, the silicon wafer 30 can be adapted to the photolithography plate 20 due to the deformation of the elastic part 50, so that the silicon wafer 30 and the photolithography plate 20 are attached more tightly.
By adopting the technical scheme, the safety of the silicon wafer 30 is enhanced, and the bonding tightness of the photoetching plate 20 and the silicon wafer 30 is enhanced.
As shown in fig. 1, 2, 6 and 8, the elastic portion 50 is vacuum-sucked to the loading portion 60; facilitating replacement of the resilient portion 50; since the elastic portion 50 is easily damaged (or aged) by the light irradiation during photolithography and the pressing of the photolithography plate 20, the elastic portion 50 needs to be replaced.
As shown in fig. 1, 2, 6 and 8, the silicon wafer 30 is attached to the elastic part 50 by vacuum; the silicon chip 30 is convenient to take and place; after the previous silicon wafer 30 is photoetched, the photoetched silicon wafer 30 can be moved away from the carrying part 60 by removing the vacuum, and then the silicon wafer 30 to be photoetched is replaced.
By adopting the scheme, the replacement of the silicon wafer 30 can be improved, and the photoetching efficiency of the silicon wafer 30 is improved.
As shown in fig. 4, 5 and 8, the loading part 60 is provided with M vacuum holes 61 connected with a vacuum control part 70, and the elastic part 50 is provided with N through holes 51; the N vacuum holes 61 on the loading part 60 are communicated with the N through holes 51 on the elastic part 50; the other M-N vacuum holes 61 are used for adsorbing the elastic part 50 to the loading part 60; m and N are positive integers, M is larger than N, and N is larger than/equal to 1; that is, a part (N) of the vacuum holes 61 provided in the loading part 60 is used for communicating with the through holes 51 of the elastic part 50 and for vacuum-absorbing the silicon wafer 30 to the elastic part 50; the remaining vacuum holes 61 (M-N) are used to attach the elastic portion 50 to the loading portion 60.
By adopting the technical scheme, the plurality of vacuum holes 61 arranged on the carrying part 60 can meet various vacuum requirements, so that the structure is simple, convenient and reliable.
As shown in fig. 4, 5, 6, 7, 8 and 9, the elastic portion 50 is provided with a first sealing portion 52, and the first sealing portion 52 can be stopped against the photolithography plate 20; the silicon wafer 30 placed on the elastic part 50 is opposite to P through holes 51 corresponding to the elastic part 50, the P through holes 51 are used for adsorbing the silicon wafer 30 on the elastic part 50, P is smaller than N, and the rest N-P through holes 51 are used for adsorbing the photoetching plate 20 and enabling the photoetching plate 20 to be attached to the silicon wafer 30; the first sealing part 52 surrounds the silicon wafer 30; m is more than 2, N is more than or equal to 2, P is more than 1, and M is more than N; the vacuum holes 61 provided in the loading part 60 can satisfy the requirements of the adsorption elastic part 50, the adsorption silicon wafer 30 and the adsorption photolithography plate 20, and the structure is simple.
By adopting the above technical scheme, when the silicon wafer 30 is attached to the photolithography plate 20, the first sealing portion 52 is stopped against the photolithography plate 20 to form the vacuum absorption region 40.
As shown in fig. 8, N-P through holes 51 for attaching the reticle 20 to the silicon wafer 30 are connected to a first vacuum pump 71; p through holes 51 for adsorbing the silicon wafer 30 on the elastic part 50 are connected to a second vacuum pump 72; M-N vacuum holes 61 for adsorbing the elastic part 50 to the loading part 60 are connected to a third vacuum pump 73; the adsorption elastic part 50, the adsorption silicon wafer 30 and the adsorption photoetching plate 20 are respectively controlled by a first vacuum pump 71, a second vacuum pump 72 and a third vacuum pump 73 which correspond to each other, so that the operation is convenient and reliable; for example, after the silicon wafer 30 is placed, the photolithography plate 20 does not need to be immediately attached to the silicon wafer 30, and therefore, the first vacuum pump 71 does not need to be started, but the second vacuum pump 72 and the third vacuum pump 73 need to be started in order to ensure that the silicon wafer 30 is stably placed in the elastic portion 50; when the silicon wafer 30 needs to be replaced, the first vacuum pump 71 and the second vacuum pump 72 need to be closed; when the elastic part 50 needs to be replaced, the first vacuum pump 71, the second vacuum pump 72 and the third vacuum pump 73 need to be closed; therefore, the first vacuum pump 71, the second vacuum pump 72 and the third vacuum pump 73 are used in combination under different use conditions, and the photoetching efficiency of the silicon wafer 30 is improved.
As shown in fig. 1 and 2, the loading portion 60 is provided with a second sealing portion 62, and the second sealing portion 62 surrounds the elastic portion 50; the silicon wafer 30 is positioned in the vacuum adsorption region 40 formed between the second sealing part 62 and the photolithography plate 20; different from the above-described scheme of providing the first sealing portion 52 to the elastic portion 50.
Adopt above-mentioned technical scheme can reduce the processing degree of difficulty of elastic component 50, and second sealing 62 here satisfies the operation requirement for the sealing ring bonds in year thing portion 60.
As shown in fig. 1, 2 and 6, the photolithography plate 20 is connected to the first connection portion 21 in a vacuum adsorption manner, the first connection portion 21 is connected to the frame 80 in a floating manner, the loading portion 60 can move towards the first connection portion 21 to stop the silicon wafer 30 against the photolithography plate 20, and the second sealing portion 62 stops against the first connection portion 21 to form the vacuum adsorption region 40; thereby enabling the photolithography plate 20 to move and turn over relative to the silicon wafer 30 so that the photolithography plate 20 is attached to the silicon wafer 30.
By adopting the technical scheme, the photoetching plate 20 meets the floating requirement, so that the photoetching plate 20 can be overturned relative to the silicon wafer 30, and the photoetching plate 20 is attached to the silicon wafer 30.
As shown in fig. 6 and 7, a lithography machine 100 includes,
the photoetching plate 20 is connected with the frame 80 in a floating mode, and the carrying part 60 can move relative to the photoetching plate 20 to enable the silicon wafer 30 on the carrying part 60 to be attached to the photoetching plate 20; the floating connection here means that the frame 80 does not limit the reticle 20 to move linearly or rotate only in a single direction, but the reticle 20 can move linearly or turn relative to the plane of attachment to ultimately attach the reticle 20 to the plane of contact.
As shown in fig. 6 and 7, the elastic portion 50 is attached to the loading portion 60; the silicon wafer 30 is vacuum-adsorbed on the elastic part 50; the replacement of the elastic part 50 is facilitated.
As shown in fig. 6, 7 and 10, the elastic portion 50 is provided with a first sealing portion 52, the first sealing portion 52 is stopped against the photolithography plate 20 to form the vacuum absorption region 40, the photolithography plate 20 is attached to the silicon wafer 30, and the silicon wafer 30 is accommodated in the vacuum absorption region 40; the structure is simple and reliable.
As shown in fig. 6, 7 and 10, the elastic part 50 is a silicone pad; the first sealing part 52 is a silica gel ring; the silica gel is an elastic material, which can ensure that the photolithography mask 20 presses the first sealing portion 52 to form the vacuum adsorption region 40 when the photolithography mask 20 is attached to the silicon wafer 30; of course, the first sealing portion 52 can be made of other materials that can satisfy the elastic sealing, and is not limited herein.
As shown in fig. 6, 7 and 10, the loading portion 60 is provided with M vacuum holes 61; the N through holes 51 arranged on the elastic part 50 are communicated with the N vacuum holes 61 on the loading part 60, and the N through holes 51 are positioned in the area surrounded by the first sealing part 52; the rest M-N vacuum holes 61 are used for adsorbing the elastic part 50 on the loading part 60, and M is larger than or equal to N; the vacuum holes 61 arranged on the loading part 60 can meet the requirements of adsorbing the elastic part 50 and the silicon wafer 30; here, when M = N, the elastic portion 50 needs to be adhered to the stage portion 60 to prevent the elastic portion 50 from being changed in position to affect the communication of the N through holes 51, and ultimately affect the vacuum suction of the silicon wafer 30.
As shown in fig. 6, 7 and 10, P through holes 51 on the elastic part 50 are used for adsorbing the silicon wafer 30 to the elastic part 50, and the remaining N-P through holes 51 are communicated with the vacuum adsorption region 40 and can generate vacuum to make the photolithography plate 20 adhere to the silicon wafer 30, where N is greater than P; the loading part 60 has N-P vacuum holes 61 communicating with the through holes 51 for creating the vacuum suction regions 40.
As shown in fig. 6, 7 and 10, the M vacuum holes 61 are connected to a vacuum control part 70; the vacuum control of the M vacuum holes 61 is met, and the use requirement is met.
As shown in fig. 6, 7 and 10, N-P through holes 51 for attaching the reticle 20 to the silicon wafer (30) are connected to a first vacuum pump 71; p through holes 51 for adsorbing the silicon wafer 30 on the elastic part 50 are connected to a second vacuum pump 72; M-N vacuum holes 61 for adsorbing the elastic part 50 to the loading part 60 are connected to a third vacuum pump 73; namely, M-N vacuum holes 61 for adsorbing the elastic part 50, P vacuum holes 61 for adsorbing the silicon wafer 30 and N-P vacuum holes 61 for forming the vacuum adsorption region 40 are respectively controlled, so that the respective vacuum control of the adsorbing elastic part 50, the adsorbing silicon wafer 30 and the forming of the vacuum adsorption region 40 is realized, and different use requirements of the lithography machine 100 are met.
As shown in fig. 6, the photolithography plate 20 is vacuum-sucked and connected to the first connection portion 21, the first connection portion 21 is connected to the frame 80 through a spring, so as to realize a floating connection of the photolithography plate 20, the spring herein does not limit that the photolithography plate 20 can only move or rotate along a specific linear direction, but the photolithography plate 20 can freely move along a direction meeting the requirement of being attached to the silicon wafer 30, and then the photolithography plate 20 is closely attached to the silicon wafer 30 under the vacuum action.
As shown in fig. 6, the exposure lamp 90 is mounted on the frame 80 and located on the side of the photolithography plate 20 away from the silicon wafer 30; the light emitted by the exposure lamp 90 passes through the photolithography plate 20 to reach the silicon wafer 30 along the direction perpendicular to the photolithography plate 20; the exposure lamp 90 is used for generating light to expose the silicon wafer 30 according to a preset pattern of the photoetching plate 20, and on the premise that the photoetching plate 20 is attached to the silicon wafer 30, the light is perpendicular to the photoetching plate 20 to irradiate the silicon wafer, so that the irradiation accuracy of the light to the silicon wafer 30 can be improved.
As shown in fig. 1 and 2, in a lithography machine 100a, a reticle 20 is floatingly coupled to a frame 80; the loading part 60 is provided with a second sealing part 62, and the second sealing part 62 is arranged around the silicon wafer 30; when the loading part 60 moves to make the silicon wafer 30 adhere to the photolithography plate 20, a vacuum adsorption region 40 is formed between the second sealing part 62 and the photolithography plate 20, and the silicon wafer 30 is accommodated in the vacuum adsorption region 40; thus, the second sealing part 62 is provided on the stage part 60 to form the vacuum adsorption region 40, so that the reticle 20 is adsorbed to the silicon wafer 30 by vacuum, and the reticle 20 can be closely adhered to the silicon wafer 30 by "the reticle 20 is float-coupled to the frame 80".
By adopting the technical scheme, the photoetching plate 20 is tightly attached to the silicon wafer 30, so that the pattern preset on the photoetching plate 20 is printed on the silicon wafer 30 stably and accurately.
As shown in fig. 1, 2 and 8, the silicon wafer 30 is mounted on the loading unit 60 through the elastic unit 50, so that the silicon wafer 30 can be bonded to the photolithography plate 20 by the elastic unit 50, and the photolithography plate 20 can be stably and reliably bonded to the silicon wafer 30.
By adopting the technical scheme, the rigidity of the silicon wafer 30 extruded by the photoetching plate 20 is weakened, so that the silicon wafer 30 is prevented from being damaged.
As shown in fig. 1 and 2, the second sealing portion 62 surrounds the elastic portion 50; therefore, the elastic part 50 is positioned in the vacuum adsorption area 40, the silicon wafer 30 extrudes the elastic part 50 to stably deform, and the elastic part 50 can enhance the deformation hardness under the action of vacuum, so that the position of the silicon wafer 30 is prevented from being changed due to the reset deformation of the elastic part 50 in the photoetching process, and the use of the photoetching machine 100a is prevented from being influenced.
By adopting the technical scheme, the deformation stability of the elastic part 50 is kept by adopting vacuum, and the influence of the reset deformation of the elastic part 50 on the position of the silicon wafer 30 is reduced.
As shown in fig. 1 and 2, the loading unit 60 is provided with a bonding air-guide hole 63, and the bonding air-guide hole 63 is communicated with the vacuum adsorption region 40; the bonding air guide hole 63 is used for generating vacuum in the vacuum adsorption area 40, so that vacuum control of the bonding effect of the photoetching plate 20 and the silicon wafer 30 is realized; without affecting the adsorption of the silicon wafer 30 to the elastic part 50 or the adsorption of the elastic part 50 to the loading part 60.
As shown in fig. 1 and 2, the photolithography plate 20 is connected to the first connecting portion 21 by vacuum suction, so that the photolithography plate 20 can be conveniently taken and placed; the first connecting portion 21 is connected to the frame 80 through a spring, and is configured to implement a floating connection of the photolithography plate 20, that is, when the silicon wafer 30 is stopped against the photolithography plate 20, the photolithography plate 20 and the first connecting portion 21 can move together along a direction of being attached to the silicon wafer 30, so as to implement attachment of the photolithography plate 20 and the silicon wafer 30.
As shown in fig. 2, the second sealing portion 62 prevents the first connecting portion 21 from forming a vacuum absorption region 40; prevent the second sealing portion 62 from abutting against the photolithography plate 20 to damage the photolithography plate 20; while preventing the vacuum absorption region 40 from being too small to cause damage to the reticle 20.
As shown in fig. 1, 2 and 8, the elastic part 50 is a silicone pad.
As shown in fig. 1 and 2, the exposure lamp 90 is mounted on the frame 80 and located on the side of the reticle 20 away from the silicon wafer 30; the light emitted by the exposure lamp 90 passes through the photolithography plate 20 to reach the silicon wafer 30 along the direction perpendicular to the photolithography plate 20; the exposure lamp 90 projects the pattern preset by the photoetching plate 20 on the silicon wafer 30 and prints the pattern on the silicon wafer 30, and the exposure lamp 90 projects the pattern perpendicular to the photoetching plate 20, so that the pattern projection accuracy can be better ensured, and the pattern on the silicon wafer 30 is stable and reliable.
As shown in fig. 1 and 2, the silicon wafer 30 is horizontally disposed, and the exposure lamp 90 is vertically disposed in a direction perpendicular to the silicon wafer 30; thereby preventing the silicon wafer 30 from being inclined and uneven due to gravity and ensuring the position accuracy due to the vertical arrangement of the exposure lamp 90.
The above are preferred embodiments of the present invention, and are not intended to limit the scope of the present invention. It should be recognized that non-inventive variations and modifications to the disclosed embodiments of the invention that may occur to those skilled in the art upon a reading of the foregoing teachings are also within the scope of the invention as claimed and disclosed.
Claims (29)
1. A method for bonding a photoetching plate and a silicon wafer is used for bonding the photoetching plate (20) and the silicon wafer (30), and is characterized in that:
the photoetching plate (20) and/or the silicon wafer (30) float, and vacuum is communicated between the photoetching plate (20) and the silicon wafer (30) for adsorption and bonding.
2. The method of claim 1, wherein the step of bonding the reticle to the silicon wafer comprises:
the vacuum adsorption area (40) surrounds the bonding area (2030) of the photoetching plate (20) and the silicon wafer (30), and the vacuum adsorption area (40) is communicated with the bonding area (2030).
3. The method of claim 1, wherein the step of bonding the reticle to the silicon wafer comprises:
the silicon chip (30) is connected to the elastic part (50), and one side, far away from the silicon chip (30), of the elastic part (50) is connected to the loading part (60).
4. The method of claim 3, wherein the step of bonding the reticle to the silicon wafer comprises:
the elastic part (50) is vacuum-adsorbed on the loading part (60).
5. The method of claim 4, wherein the step of bonding the reticle to the silicon wafer comprises:
the silicon wafer (30) is attached to the elastic part (50) by vacuum suction.
6. The method of claim 5, wherein the step of bonding the reticle to the silicon wafer comprises:
the object carrying part (60) is provided with M vacuum holes (61) connected with a vacuum control part (70), and the elastic part (50) is provided with N through holes (51); n vacuum holes (61) on the carrying part (60) are communicated with N through holes (51) on the elastic part (50); the other M-N vacuum holes (61) are used for adsorbing the elastic part (50) to the loading part (60); m and N are positive integers, M is larger than N, and N is larger than/equal to 1.
7. The method of claim 6, wherein the step of bonding the reticle to the silicon wafer comprises:
the elastic part (50) is provided with a first sealing part (52), and the first sealing part (52) can stop against the photoetching plate (20); the silicon wafer (30) placed on the elastic part (50) is opposite to the P through holes (51) on the corresponding elastic part (50), the P through holes (51) are used for adsorbing the silicon wafer (30) on the elastic part (50), P is smaller than N, and the rest N-P through holes (51) are used for adsorbing the photoetching plate (20) and enabling the photoetching plate (20) to be attached to the silicon wafer (30); the first sealing part (52) surrounds the silicon wafer 30; m is more than 2, N is more than or equal to 2, P is more than 1, and M is more than N.
8. The method of claim 7, wherein the step of bonding the reticle to the silicon wafer comprises:
N-P through holes (51) for bonding the photolithography plate (20) to the silicon wafer (30) are connected to a first vacuum pump (71); p through holes (51) for adsorbing the silicon wafer (30) on the elastic part (50) are connected to a second vacuum pump (72); M-N vacuum holes (61) for adsorbing the elastic part (50) to the loading part (60) are connected to a third vacuum pump (73).
9. The method of claim 6, wherein the step of bonding the reticle to the silicon wafer comprises:
the loading part (60) is provided with a second sealing part (62), and the second sealing part (62) surrounds the elastic part (50); the silicon wafer (30) is located in a vacuum adsorption region (40) formed between the second sealing part (62) and the photolithography plate (20).
10. The method of claim 9, wherein the step of bonding the reticle to the silicon wafer comprises:
the photoetching plate (20) is connected to the first connecting portion (21) in a vacuum adsorption mode, the first connecting portion (21) is connected to the rack (80) in a floating mode, the carrying portion (60) can move towards the first connecting portion (21) to enable the silicon wafer (30) to be abutted against the photoetching plate (20), and the second sealing portion (62) is abutted against the first connecting portion (21) to form a vacuum adsorption area (40).
11. A lithography machine, characterized by: the lithography machine (100) comprises a first stage,
the photoetching plate (20) is connected to the frame (80) in a floating mode, and the carrying part (60) can move relative to the photoetching plate (20) to enable the silicon wafer (30) on the carrying part (60) to be attached to the photoetching plate (20).
12. A lithography machine according to claim 11, wherein: an elastic part (50) is mounted on the carrying part (60); the silicon wafer (30) is vacuum-sucked to the elastic part (50).
13. A lithography machine according to claim 12, wherein: the elastic part (50) is provided with a first sealing part (52), the first sealing part (52) is stopped against the photoetching plate (20) to form a vacuum adsorption area (40), the photoetching plate (20) is attached to the silicon wafer (30), and the silicon wafer (30) is accommodated in the vacuum adsorption area (40).
14. A lithography machine according to claim 13, wherein:
the elastic part (50) is a silica gel pad; the first sealing part (52) is a silica gel ring.
15. A lithography machine according to claim 13, wherein: the carrying part (60) is provided with M vacuum holes (61); n through holes (51) arranged on the elastic part (50) are communicated with N vacuum holes (61) on the loading part (60), and the N through holes (51) are positioned in a region surrounded by the first sealing part (52); the other M-N vacuum holes (61) are used for adsorbing the elastic part (50) on the loading part (60), and M is larger than or equal to N.
16. A lithography machine according to claim 15, wherein: p through holes (51) in the elastic part (50) are used for adsorbing the silicon wafer (30) to the elastic part (50), the rest N-P through holes (51) are communicated with the vacuum adsorption area (40) and can generate vacuum to enable the photoetching plate (20) to be attached to the silicon wafer (30), and N is larger than P.
17. A lithography machine according to claim 15, wherein: the M vacuum holes (61) are connected to a vacuum control unit (70).
18. A lithography machine according to claim 16, wherein: N-P through holes (51) for bonding the photolithography plate (20) to the silicon wafer (30) are connected to a first vacuum pump (71); p through holes (51) for adsorbing the silicon wafer (30) on the elastic part (50) are connected to a second vacuum pump (72); M-N vacuum holes (61) for adsorbing the elastic part (50) to the loading part (60) are connected to a third vacuum pump (73).
19. A lithography machine according to claim 11, wherein: the photoetching plate (20) is connected to a first connecting part (21) in a vacuum adsorption mode, and the first connecting part (21) is connected to the rack (80) through a spring.
20. A lithography machine according to claim 11, wherein: the exposure lamp (90) is arranged on the frame (80) and is positioned on one side of the photoetching plate (20) far away from the silicon wafer (30); the light emitted by the exposure lamp (90) passes through the photoetching plate (20) along the direction vertical to the photoetching plate (20) and reaches the silicon wafer (30).
21. A lithography machine, characterized by: the photoetching plate (20) is connected to the frame (80) in a floating manner; the carrying part (60) is provided with a second sealing part (62), and the second sealing part (62) is arranged around the silicon chip (30); when the object carrying part (60) moves to enable the silicon wafer (30) to be attached to the photoetching plate (20), a vacuum adsorption area (40) is formed between the second sealing part (62) and the photoetching plate (20), and the silicon wafer (30) is accommodated in the vacuum adsorption area (40).
22. A lithography machine according to claim 21, wherein: the silicon wafer (30) is mounted on the loading part (60) through an elastic part (50).
23. A lithography machine according to claim 22, wherein: the second seal portion (62) surrounds the elastic portion (50).
24. A lithography machine according to claim 22, wherein: the carrying part (60) is provided with a bonding air guide hole (63), and the bonding air guide hole (63) is communicated with the vacuum adsorption area (40).
25. A lithography machine according to claim 24, wherein: the photoetching plate (20) is connected to a first connecting part (21) in a vacuum adsorption mode, and the first connecting part (21) is connected to the rack (80) through a spring.
26. A lithography machine according to claim 25, wherein: the second sealing portion (62) is prevented from abutting against the first connecting portion (21) to form a vacuum suction region (40).
27. A lithography machine according to claim 22, wherein: the elastic part (50) is a silica gel pad.
28. A lithography machine according to claim 25, wherein: the exposure lamp (90) is arranged on the frame (80) and is positioned on one side of the photoetching plate (20) far away from the silicon wafer (30); the light emitted by the exposure lamp (90) passes through the photoetching plate (20) along the direction vertical to the photoetching plate (20) and reaches the silicon wafer (30).
29. The reticle of claim 28, wherein: the silicon wafer (30) is horizontally arranged, and the exposure lamp (90) is vertically arranged along the direction perpendicular to the silicon wafer (30).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911173826.7A CN110850686A (en) | 2019-11-26 | 2019-11-26 | Method for attaching photoetching plate and silicon wafer and photoetching machine |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911173826.7A CN110850686A (en) | 2019-11-26 | 2019-11-26 | Method for attaching photoetching plate and silicon wafer and photoetching machine |
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| CN110850686A true CN110850686A (en) | 2020-02-28 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11265070A (en) * | 1998-03-18 | 1999-09-28 | Oki Electric Ind Co Ltd | Contact aligner |
| US6232023B1 (en) * | 1998-04-28 | 2001-05-15 | Ushiodenki Kabushiki Kaisah | Contact exposure process and device |
| US20030234919A1 (en) * | 2002-06-21 | 2003-12-25 | Tsunesou Tajima | Full-contact type exposure device |
| CN211123620U (en) * | 2019-11-26 | 2020-07-28 | 矽电半导体设备(深圳)股份有限公司 | Photoetching machine |
-
2019
- 2019-11-26 CN CN201911173826.7A patent/CN110850686A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11265070A (en) * | 1998-03-18 | 1999-09-28 | Oki Electric Ind Co Ltd | Contact aligner |
| US6232023B1 (en) * | 1998-04-28 | 2001-05-15 | Ushiodenki Kabushiki Kaisah | Contact exposure process and device |
| US20030234919A1 (en) * | 2002-06-21 | 2003-12-25 | Tsunesou Tajima | Full-contact type exposure device |
| CN211123620U (en) * | 2019-11-26 | 2020-07-28 | 矽电半导体设备(深圳)股份有限公司 | Photoetching machine |
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