CN110849886A - Device and method for realizing simultaneous detection of semiconductor crystal grain top surface and bottom surface based on image transfer lens - Google Patents
Device and method for realizing simultaneous detection of semiconductor crystal grain top surface and bottom surface based on image transfer lens Download PDFInfo
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Abstract
The invention relates to a device and a method for realizing simultaneous detection of a top surface and a bottom surface of a semiconductor crystal grain based on an image rotating lens, wherein the detection device comprises a transparent objective table for bearing the semiconductor crystal grain to be detected, a right-angle image rotating prism arranged on the first side of the transparent objective table, a light source arranged on the second side of the transparent objective table, a telecentric imaging lens and a camera; the inclined plane of the right-angle relay prism faces the transparent objective table and is parallel to the transparent objective table; a first image rotating lens and a second image rotating lens are respectively arranged on the imaging beam incident and emergent apertures of the inclined surface of the right-angle image rotating prism; the right-angle relay prism, the first relay lens and the second relay lens form a combined relay optical system, and the combined relay optical system can also comprise two second right-angle relay prisms and a relay lens positioned between the two second right-angle relay prisms; the invention can realize the basic aplanatic imaging of the semiconductor crystal grain top surface and the bottom surface, reduce the requirement of a detection system on the large depth of field of the imaging lens and reduce the cost of the imaging lens.
Description
The technical field is as follows:
the invention belongs to the field of optical detection and machine vision, and particularly relates to a device and a method for realizing simultaneous detection of a semiconductor crystal grain top surface and a semiconductor crystal grain bottom surface based on an image transfer lens.
Background art:
the conventional machine vision optical detection device mainly comprises a camera, an imaging lens, an illumination light source, image processing algorithm software, electrical control, a mechanical structure, an object to be detected (such as a semiconductor crystal grain) and the like. The object is illuminated by a light source, the object obtains an image of the object on the CCD detector surface through an optical imaging lens, the image is transmitted to a computer through an image acquisition card and an A-D conversion module, finally, required image information is obtained through a digital image processing technology, and the size, the shape and the color are distinguished and measured according to information such as pixel distribution, brightness, color and the like, so that the field equipment operation is controlled. If two faces of a single object are to be detected simultaneously, the current universal detection method is that one camera occupies one station to detect one face, and if two faces or more than two faces are to be detected simultaneously, a plurality of cameras need to occupy a plurality of stations to detect, so that the mechanism installation space is large, a plurality of sets of mechanism installation modules and a plurality of sets of circuit modules are needed simultaneously, the installation complexity is increased, and the system reliability is reduced.
The traditional machine vision optical detection device based on the single-lens single-side detection technology has economic and technical limitations such as detection efficiency, cost performance, complex structure and the like; the applicant has previously proposed an optical device and method for simultaneous inspection of both the top and bottom surfaces of a semiconductor die that improves the efficiency, cost-effectiveness, structural complexity and reliability of surface defect inspection.
As shown in fig. 1, a previous patent application (patent application No. 201910157471.6) of the present applicant proposes an apparatus and method for simultaneously optically inspecting both the top and bottom surfaces of an object (semiconductor die), which includes a horizontally disposed transparent glass stage a5 and a semiconductor die a4 to be inspected thereon, a right-angle relay prism a6 disposed below the transparent glass stage, and a camera a1, a telecentric imaging lens a2 and an annular illumination light source A3 disposed above the transparent glass stage; the inclined plane of the right-angle relay prism faces the transparent glass objective table and is parallel to the transparent glass objective table; the right-angle image rotating prism, the telecentric imaging lens and the camera are coaxial. The method mainly adopts the secondary reflection of the right-angle rotating image prism to realize the simultaneous detection of the top surface and the bottom surface of the same crystal grain to be detected.
Because two optical paths of the double-sided detection optical system use different numbers of optical elements, and the object space optical lengths of the two-sided detection imaging optical paths are not equal, a specially designed large-depth-of-field telecentric imaging lens is usually needed to obtain clear imaging of both the top surface and the bottom surface of the crystal grain to be detected.
The limitations of the prior art described above are: one lens simultaneously inspects both opposing faces (the top and bottom) of a semiconductor die, but in the implementation of simultaneous inspection of both faces of a semiconductor die, the following two new problems are typically encountered: (1) the problem of unequal optical distances of double-sided detection is as follows: because two optical paths of the double-sided detection system use different numbers of optical elements, the object space optical paths of the two-sided detection optical paths are not equal, thereby causing the problem of improving the requirement on the depth of field of the imaging lens; (2) the problem of unequal illumination of double-sided detection: because the two light paths pass through different numbers of optical elements and are reflected and refracted for different times, the illumination intensity of the two light beams with the same intensity when reaching the surface to be measured of the crystal grain is different, and the image processing difficulty is caused for the simultaneous detection of double-sided defects.
The invention content is as follows:
the invention provides a device and a method for realizing the simultaneous detection of the top surface and the bottom surface of the semiconductor crystal grain based on the image transfer lens, aiming at the problems, the device and the method for realizing the simultaneous detection of the top surface and the bottom surface of the semiconductor crystal grain based on the image transfer lens can reduce the requirement of a detection system on the large depth of field of an imaging lens.
The invention discloses a device for realizing the simultaneous detection of the top surface and the bottom surface of a semiconductor crystal grain based on an image rotating lens, which is characterized in that: the device comprises a transparent objective table for bearing semiconductor crystal grains to be detected, a first right-angle rotating image prism arranged on the first side of the transparent objective table, a light source arranged on the second side of the transparent objective table, a telecentric imaging lens and a camera; the inclined plane of the first right-angle rotating image prism faces the transparent objective table and is parallel to the transparent objective table; and a first image rotating lens and a second image rotating lens are respectively arranged on the imaging beam incidence and exit apertures of the inclined plane of the first right-angle image rotating prism.
Furthermore, the bottom surface of the semiconductor crystal grain is imaged on a horizontal position which is beside the transparent glass object stage and is close to the bottom surface of the semiconductor crystal grain.
Furthermore, when the bottom surface of the semiconductor crystal grain is positioned at the focal position twice of the object space of the combined relay imaging optical system, the real image of the bottom surface of the semiconductor crystal grain is obtained at the focal position twice of the image space, and the transverse magnification is 1 time; the secondary images of the top surface and the bottom surface of the semiconductor crystal grain respectively pass through a telecentric imaging lens to finally form real images of the top surface and the bottom surface in the left half area and the right half area of the camera sensor.
Further, the light source is an annular light source; the annular light source is formed into an annular shape by a left half ring and a right half ring, the left half ring and the right half ring respectively correspond to a left half area and a right half area of the camera sensor, and the illumination of the left half ring and the right half ring is respectively controlled.
Further, the image transfer lens is replaced by a double cemented lens.
Further, the transparent stage is a transparent glass plate.
The invention discloses a method for realizing simultaneous detection of a semiconductor crystal grain top surface and a semiconductor crystal grain bottom surface based on an image transfer lens, which is characterized by comprising the following steps of:
step A1: placing a transparent object stage and a light source positioned between the transparent object stage and the telecentric imaging lens in the direction vertical to the optical axis of a shooting device consisting of a camera and the coaxial telecentric imaging lens;
step A2: a first right-angle rotating image prism is arranged on the first side of the transparent object stage and is perpendicular to the direction of the optical axis; the inclined plane of the first right-angle rotating image prism faces the transparent objective table and is parallel to the transparent objective table;
step A3: when the bottom surface of the semiconductor crystal grain is positioned at the object space twice focal position of the combined image rotating optical system, a real image of the bottom surface of the semiconductor crystal grain is obtained at the image space twice focal position, and the transverse magnification is 1 time; the secondary images of the top surface and the bottom surface of the semiconductor crystal grain respectively pass through a telecentric imaging lens to finally form real images of the top surface and the bottom surface in the left half area and the right half area of the camera sensor;
step A4: and placing the semiconductor crystal grain to be tested on a transparent object stage.
The invention discloses a device for realizing the simultaneous detection of the top surface and the bottom surface of a semiconductor crystal grain based on an image rotating lens, which is characterized in that: the device comprises a transparent objective table for bearing semiconductor crystal grains to be detected, a second right-angle rotating prism, a light source, a telecentric imaging lens and a camera, wherein the second right-angle rotating prism is arranged on the first side of the transparent objective table, and the two right-angle surfaces are arranged in a back-to-back manner; the other right-angle surface of the two second right-angle relay prisms faces the transparent objective table and is parallel to the transparent objective table; and an image rotating lens is arranged between the opposite right-angle surfaces of the two second right-angle image rotating prisms.
Furthermore, the bottom surface of the semiconductor crystal grain is imaged on a horizontal position which is beside the transparent glass object stage and is close to the bottom surface of the semiconductor crystal grain.
Furthermore, when the bottom surface of the semiconductor crystal grain is positioned at the focal position twice of the object space of the combined relay imaging optical system, the real image of the bottom surface of the semiconductor crystal grain is obtained at the focal position twice of the image space, and the transverse magnification is 1 time; the secondary images of the top surface and the bottom surface of the semiconductor crystal grain respectively pass through a telecentric imaging lens to finally form real images of the top surface and the bottom surface in the left half area and the right half area of the camera sensor.
Further, the light source is an annular light source; the annular light source is formed into an annular shape by a left half ring and a right half ring, the left half ring and the right half ring respectively correspond to a left half area and a right half area of the camera sensor, and the illumination of the left half ring and the right half ring is respectively controlled.
Further, the image transfer lens is replaced by a double cemented lens.
Further, the transparent stage is a transparent glass plate.
The invention discloses a method for realizing simultaneous detection of a semiconductor crystal grain top surface and a semiconductor crystal grain bottom surface based on an image transfer lens, which is characterized by comprising the following steps of:
step A1: placing a transparent object stage and a light source positioned between the transparent object stage and the telecentric imaging lens in the direction vertical to the optical axis of a shooting device consisting of a camera and the coaxial telecentric imaging lens;
step A2: two second right-angle rotating prisms which are arranged oppositely are arranged on the first side of the transparent object stage; the other right-angle surface of the two second right-angle relay prisms faces the transparent objective table and is parallel to the transparent objective table;
step A3: when the bottom surface of the semiconductor crystal grain is positioned at the focus position twice the object space of the combined image rotating optical system, a real image of the bottom surface of the semiconductor crystal grain is obtained at the focus position twice the image space, and the transverse magnification is 1 time; the secondary images of the top surface and the bottom surface of the semiconductor crystal grain respectively pass through a telecentric imaging lens to finally form real images of the top surface and the bottom surface in the left half area and the right half area of the camera sensor;
step A4: and placing the semiconductor crystal grain to be tested on a transparent object stage.
The device for simultaneously detecting the top surface and the bottom surface of the semiconductor crystal grain based on the image transfer lens enables the real image of the bottom surface to be positioned at the side of the transparent glass object stage and on the horizontal position close to the bottom surface of the semiconductor crystal grain, and can realize the basic aplanatism imaging of the top surface and the bottom surface of the semiconductor crystal grain even if the imaging of the bottom surface and the top surface is very close, thereby reducing the requirement of a detection system on the large depth of field of the imaging lens and reducing the cost of the imaging lens.
Description of the drawings:
FIG. 1 is a diagram of a conventional apparatus for optically inspecting both the top and bottom surfaces of an object (semiconductor die);
FIG. 2 is a block diagram of a combined optical relay system using a right angle relay prism and two relay lenses, according to an embodiment of the present invention;
FIG. 3 is a block diagram of a combined optical relay system using two right angle relay prisms and a relay lens, according to one embodiment of the present invention;
fig. 4 is another embodiment of fig. 3, which is a combined optical relay system using two right-angle relay prisms and a double cemented relay lens.
The specific implementation mode is as follows:
in one embodiment (as shown in fig. 2), the apparatus for simultaneously detecting the top surface and the bottom surface of a semiconductor crystal grain based on an image rotating lens of the present invention comprises a transparent stage 5 for carrying the semiconductor crystal grain to be detected, a first right-angle image rotating prism 6 arranged on a first side of the transparent stage, and a light source 3, a telecentric imaging lens 2 and a camera 1 arranged on a second side of the transparent stage; the inclined plane 601 of the first right-angle rotating image prism faces the transparent objective table 5 and is parallel to the transparent objective table; the imaging beam incident and emergent apertures of the first right-angle image rotating prism inclined plane are respectively provided with a first image rotating lens 7a and a second image rotating lens 7b, and the first image rotating lens 7a and the second image rotating lens 7b are both convex lenses.
The combined relay optical system formed by the first right-angle relay prism, the first relay lens 7a and the second relay lens 7b can realize the basic aplanatic imaging of the top surface and the bottom surface, and reduces the requirement of a detection system on the large depth of field of an imaging lens, even if the depth of field is less than or equal to the thickness of a crystal grain.
The bottom imaging position K of the semiconductor crystal grain can be adjusted by adjusting the distance between the first image rotating lens 7a and the second image rotating lens 7b and the inclined plane 601 of the first right-angle image rotating prism, and the bottom imaging position K of the semiconductor crystal grain is positioned at the side of the transparent glass object stage and close to the horizontal position of the bottom surface of the semiconductor crystal grain even if the requirement of a detection system on the large depth of field of the imaging lens can be reduced, the cost of the imaging lens is reduced, and the shooting difficulty and the image processing difficulty are also reduced.
When the bottom surface of the semiconductor crystal grain is positioned at the focus position twice as far as the object space of the combined relay imaging optical system, a real image of the bottom surface of the semiconductor crystal grain is obtained at the focus position twice as far as the image space, and the transverse magnification is 1 time; the secondary images of the top surface and the bottom surface of the semiconductor crystal grain respectively pass through a telecentric imaging lens to finally form real images of the top surface and the bottom surface in the left half area and the right half area of the camera sensor.
In order to enable the telecentric imaging lens and the camera to capture images, the light source is an annular light source.
The annular light source is formed into an annular shape by a left half ring and a right half ring, the center of the annular shape is transparent, so that a light path is not blocked, the left half ring and the right half ring respectively correspond to a left half area and a right half area of the camera sensor, and the illumination of the left half ring and the right half ring is respectively controlled; because the bottom surface detection illumination light path of the semiconductor crystal grain uses three image rotating optical elements more than that of the sky surface, the illumination intensity of the bottom surface is different from that of the sky surface, and the illumination intensities of the left half ring and the right half ring are respectively controlled, so that the illumination intensity difference can be compensated by the unequal illumination intensities of the left half ring and the right half ring which adopt the annular illumination light source.
In order to improve the imaging quality, the image transfer lens can be replaced by a double cemented lens, that is, at least one of the first image transfer lens 7a and the second image transfer lens 7b can be replaced by a double cemented lens formed by attaching a concave lens and a convex lens.
The transparent stage may be a transparent glass sheet.
The device can detect the semiconductor crystal grains and can simultaneously detect the upper surface and the bottom surface of other objects placed on the transparent object stage.
The invention discloses a method for realizing simultaneous detection of a semiconductor crystal grain top surface and a semiconductor crystal grain bottom surface based on an image transfer lens, which comprises the following steps:
step A1: a transparent object stage 5 and a light source 3 positioned between the transparent object stage and the telecentric imaging lens are arranged in the direction vertical to the optical axis of a shooting device consisting of the camera 1 and the coaxial telecentric imaging lens 2;
step A2: a first right-angle rotating image prism 6 is arranged on the first side of the transparent object stage and is vertical to the direction of an optical axis; the inclined plane 601 of the first right-angle rotating image prism faces the transparent objective table and is parallel to the transparent objective table;
step A3: when the bottom surface of the semiconductor crystal grain is positioned at the object space twice focal point position of the combined image rotating optical system, a real image of the bottom surface of the semiconductor crystal grain is obtained at the image space twice focal point position, and the transverse magnification is 1 time; the secondary images of the top surface and the bottom surface of the semiconductor crystal grain 4 respectively pass through a telecentric imaging lens to finally form real images of the top surface and the bottom surface in the left half area and the right half area of the camera sensor;
step A4: the semiconductor die 4 to be tested is placed on a transparent stage 5.
In another embodiment (as shown in fig. 2 and 4), the apparatus for simultaneously detecting the top surface and the bottom surface of a semiconductor crystal grain based on an image transfer lens of the present invention comprises a transparent stage 5 for carrying the semiconductor crystal grain to be detected, second right-angle image transfer prisms 6a and 6b arranged on the first side of the transparent stage and opposite to the two right-angle surfaces, and a light source 3, a telecentric imaging lens 2 and a camera 1 arranged on the second side of the transparent stage; the other right-angle surface of the two second right-angle relay prisms faces the transparent objective table and is parallel to the transparent objective table 5; an image rotating lens 7 is arranged between the opposite right-angle surfaces of the two second right-angle image rotating prisms, and the image rotating lens 7 is a convex lens.
The combined relay optical system formed by the second right- angle relay prisms 6a and 6b and the relay lens 7 can realize the basic aplanatism imaging of the top surface and the bottom surface, and reduces the requirement of a detection system on the large depth of field of an imaging lens, even if the depth of field is less than or equal to the thickness of a crystal grain.
The bottom surface imaging of the semiconductor crystal grain is positioned at the side of the transparent glass objective table and close to the horizontal position of the bottom surface of the semiconductor crystal grain, the bottom surface imaging position K of the semiconductor crystal grain can be adjusted by adjusting the distance between the relay lens 7 and the right-angle surface of the second right-angle relay prism, the bottom surface imaging of the semiconductor crystal grain is positioned at the side of the transparent glass objective table and close to the horizontal position of the bottom surface of the semiconductor crystal grain, even if the requirement of a detection system on the large depth of field of the imaging lens can be reduced, the cost of the imaging lens is reduced, the shooting difficulty and the image processing difficulty are also reduced.
When the bottom surface of the semiconductor crystal grain is positioned at the focus position twice as far as the object space of the combined relay imaging optical system, a real image of the bottom surface of the semiconductor crystal grain is obtained at the focus position twice as far as the image space, and the transverse magnification is 1 time; the secondary images of the top surface and the bottom surface of the semiconductor crystal grain respectively pass through a telecentric imaging lens to finally form real images of the top surface and the bottom surface in the left half area and the right half area of the camera sensor.
In order to enable the telecentric imaging lens and the camera to capture images, the light source is an annular light source.
The annular light source is formed into an annular shape by a left half ring and a right half ring, the center of the annular shape is transparent, so that a light path is not blocked, the left half ring and the right half ring respectively correspond to a left half area and a right half area of the camera sensor, and the illumination of the left half ring and the right half ring is respectively controlled; because the bottom surface detection illumination light path of the semiconductor crystal grain uses three image rotating optical elements more than that of the sky surface, the illumination intensity of the bottom surface is different from that of the sky surface, and the illumination intensities of the left half ring and the right half ring are respectively controlled, so that the illumination intensity difference can be compensated by the unequal illumination intensities of the left half ring and the right half ring which adopt the annular illumination light source.
In order to improve the imaging quality, the image transfer lens can be replaced by a double cemented lens, that is, the image transfer lens 7 can be replaced by a double cemented lens formed by attaching a concave lens and a convex lens.
The transparent stage may be a transparent glass sheet.
The device can detect the semiconductor crystal grains and can simultaneously detect the upper surface and the bottom surface of other objects placed on the transparent object stage.
The invention discloses a method for realizing simultaneous detection of a semiconductor crystal grain top surface and a semiconductor crystal grain bottom surface based on an image transfer lens, which comprises the following steps:
step A1: a transparent object stage 5 and a light source 3 positioned between the transparent object stage and the telecentric imaging lens are arranged in the direction vertical to the optical axis of a shooting device consisting of the camera 1 and the coaxial telecentric imaging lens 2;
step A2: two second right- angle imaging prisms 6a and 6b which are arranged in an opposite way are arranged on the first side of the transparent object stage; the other right-angle surface of the two second right-angle relay prisms faces the transparent objective table and is parallel to the transparent objective table 5;
step A3: an image transfer lens 7 is arranged between the opposite right-angle surfaces of the two second right-angle image transfer prisms, the bottom surface of the semiconductor crystal grain to be tested placed on the transparent objective table is imaged on the horizontal position which is close to the bottom surface of the semiconductor crystal grain and is beside the transparent glass objective table, and meanwhile, when the bottom surface of the semiconductor crystal grain is positioned on the object-side double-focus position of the combined image transfer optical system, a real image of the bottom surface of the semiconductor crystal grain is obtained on the image-side double-focus position, and the transverse magnification is 1 time; the secondary images of the top surface and the bottom surface of the semiconductor crystal grain respectively pass through a telecentric imaging lens to finally form real images of the top surface and the bottom surface in the left half area and the right half area of the camera sensor;
step A4: the semiconductor die 4 to be tested is placed on a transparent stage 5.
Second right-angle relay prism: light is perpendicularly incident from the right-angle side of the second right-angle image turning prism, is perpendicularly emergent from the other right-angle side after primary reflection with an emitting angle of 45 degrees is generated on the inclined plane, 90-degree turning is generated, and finally emergent light is compared with incident light, and 90-degree turning is generated on a light path.
First right-angle relay prism: the light is vertically incident from the hypotenuse of the first right-angle rotating image prism, reflection with an emitting angle of 45 degrees is respectively generated on two right-angle sides, and finally, the emergent light is compared with the incident light, and the light path is turned by 180 degrees.
Depth of field: refers to the range of the front-rear distance of the subject measured by the imaging lens or other imaging system capable of obtaining a sharp image.
Coaxial lens: the coaxial illumination light source and the lens are integrated, and an epi-illumination mode is adopted.
The device for simultaneously detecting the top surface and the bottom surface of the semiconductor crystal grain based on the image transfer lens enables the real image of the bottom surface to be positioned at the side of the transparent glass object stage and on the horizontal position close to the bottom surface of the semiconductor crystal grain, even if the images of the bottom surface and the top surface are very close, thereby reducing the requirement of a detection system on the large depth of field of the imaging lens and reducing the cost of the imaging lens.
Finally, it should be noted that the above examples are only used to illustrate the technical solutions of the present invention and not to limit the same; although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art will understand that: modifications to the specific embodiments of the invention or equivalent substitutions for parts of the technical features may be made; without departing from the spirit of the present invention, it is intended to cover all aspects of the invention as defined by the appended claims.
Claims (9)
1. A device for realizing simultaneous detection of a semiconductor crystal grain top surface and a semiconductor crystal grain bottom surface based on an image transfer lens is characterized in that: the device comprises a transparent objective table for bearing semiconductor crystal grains to be detected, a first right-angle rotating image prism arranged on the first side of the transparent objective table, a light source arranged on the second side of the transparent objective table, a telecentric imaging lens and a camera; the inclined plane of the first right-angle rotating image prism faces the transparent objective table and is parallel to the transparent objective table; and a first image rotating lens and a second image rotating lens are respectively arranged on the imaging beam incidence and exit apertures of the inclined plane of the first right-angle image rotating prism.
2. A device for realizing simultaneous detection of a semiconductor crystal grain top surface and a semiconductor crystal grain bottom surface based on an image transfer lens is characterized in that: the device comprises a transparent objective table for bearing semiconductor crystal grains to be detected, a second right-angle rotating prism, a light source, a telecentric imaging lens and a camera, wherein the second right-angle rotating prism is arranged on the first side of the transparent objective table, and the two right-angle surfaces are arranged in a back-to-back manner; the other right-angle surface of the two second right-angle relay prisms faces the transparent objective table and is parallel to the transparent objective table; and an image rotating lens is arranged between the opposite right-angle surfaces of the two second right-angle image rotating prisms.
3. The apparatus for realizing simultaneous detection of the top surface and the bottom surface of a semiconductor die based on an image transfer lens as claimed in claim 1 or 2, wherein: the bottom surface of the semiconductor crystal grain is imaged at the side of the transparent glass object stage and is in a horizontal position close to the bottom surface of the semiconductor crystal grain.
4. The apparatus for realizing simultaneous detection of the top surface and the bottom surface of a semiconductor die based on an image transfer lens as claimed in claim 1 or 2, wherein: when the bottom surface of the semiconductor crystal grain is positioned at the focus position twice as large as the object space of the combined image transfer optical system, the real image of the bottom surface of the semiconductor crystal grain is obtained at the focus position twice as large as the image space, the transverse magnification ratio is 1, and the secondary images of the top surface and the bottom surface of the semiconductor crystal grain finally form the real images of the top surface and the bottom surface in the left half area and the right half area of the camera sensor through the telecentric imaging lens respectively.
5. The apparatus for realizing simultaneous detection of the top surface and the bottom surface of a semiconductor die based on an image transfer lens as claimed in claim 1 or 2, wherein: the light source is an annular light source; the annular light source is formed into an annular shape by a left half ring and a right half ring, the left half ring and the right half ring respectively correspond to a left half area and a right half area of the camera sensor, and the illumination of the left half ring and the right half ring is respectively controlled.
6. The apparatus for realizing simultaneous detection of the top surface and the bottom surface of a semiconductor die based on an image transfer lens as claimed in claim 1 or 2, wherein: the image transfer lens is replaced by a double cemented lens.
7. The apparatus for realizing simultaneous detection of the top surface and the bottom surface of a semiconductor die based on an image transfer lens as claimed in claim 1 or 2, wherein: the transparent object stage is a transparent glass plate.
8. A method for realizing simultaneous detection of a semiconductor crystal grain top surface and a semiconductor crystal grain bottom surface based on an image transfer lens is characterized by comprising the following steps:
step A1: placing a transparent object stage and a light source positioned between the transparent object stage and the telecentric imaging lens in the direction vertical to the optical axis of a shooting device consisting of a camera and the coaxial telecentric imaging lens;
step A2: a first right-angle rotating image prism is arranged on the first side of the transparent object stage and is perpendicular to the direction of the optical axis; the inclined plane of the first right-angle rotating image prism faces the transparent objective table and is parallel to the transparent objective table;
step A3: when the bottom surface of the semiconductor crystal grain is positioned at the object space twice focal position of the combined image rotating optical system, a real image of the bottom surface of the semiconductor crystal grain is obtained at the image space twice focal position, and the transverse magnification is 1 time; the secondary images of the top surface and the bottom surface of the semiconductor crystal grain respectively pass through a telecentric imaging lens to finally form real images of the top surface and the bottom surface in the left half area and the right half area of the camera sensor;
step A4: and placing the semiconductor crystal grain to be tested on a transparent object stage.
9. A method for realizing simultaneous detection of a semiconductor crystal grain top surface and a semiconductor crystal grain bottom surface based on an image transfer lens is characterized by comprising the following steps:
step A1: placing a transparent object stage and a light source positioned between the transparent object stage and the telecentric imaging lens in the direction vertical to the optical axis of a shooting device consisting of a camera and the coaxial telecentric imaging lens;
step A2: two second right-angle rotating prisms which are arranged oppositely are arranged on the first side of the transparent object stage; the other right-angle surface of the two second right-angle relay prisms faces the transparent objective table and is parallel to the transparent objective table;
step A3: when the bottom surface of the semiconductor crystal grain is positioned at the focus position twice the object space of the combined image rotating optical system, a real image of the bottom surface of the semiconductor crystal grain is obtained at the focus position twice the image space, and the transverse magnification is 1 time; the secondary images of the top surface and the bottom surface of the semiconductor crystal grain respectively pass through a telecentric imaging lens to finally form real images of the top surface and the bottom surface in the left half area and the right half area of the camera sensor;
step A4: and placing the semiconductor crystal grain to be tested on a transparent object stage.
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| CN201911270929.5A CN110849886A (en) | 2019-12-12 | 2019-12-12 | Device and method for realizing simultaneous detection of semiconductor crystal grain top surface and bottom surface based on image transfer lens |
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| CN201911270929.5A CN110849886A (en) | 2019-12-12 | 2019-12-12 | Device and method for realizing simultaneous detection of semiconductor crystal grain top surface and bottom surface based on image transfer lens |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111220627A (en) * | 2020-03-20 | 2020-06-02 | 泉州师范学院 | Device and method for crystal grain double-face simultaneous aplanatic confocal imaging detection based on bicolor separation imaging method |
| CN115128099A (en) * | 2022-08-29 | 2022-09-30 | 苏州高视半导体技术有限公司 | Wafer defect detection method, wafer defect detection equipment and shooting device thereof |
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2019
- 2019-12-12 CN CN201911270929.5A patent/CN110849886A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111220627A (en) * | 2020-03-20 | 2020-06-02 | 泉州师范学院 | Device and method for crystal grain double-face simultaneous aplanatic confocal imaging detection based on bicolor separation imaging method |
| CN111220627B (en) * | 2020-03-20 | 2022-09-13 | 泉州师范学院 | Device and method for crystal grain double-face simultaneous aplanatic confocal imaging detection based on bicolor separation imaging method |
| CN115128099A (en) * | 2022-08-29 | 2022-09-30 | 苏州高视半导体技术有限公司 | Wafer defect detection method, wafer defect detection equipment and shooting device thereof |
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