CN110838550A - Mixed type light-emitting diode and preparation method thereof - Google Patents

Mixed type light-emitting diode and preparation method thereof Download PDF

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CN110838550A
CN110838550A CN201810927407.7A CN201810927407A CN110838550A CN 110838550 A CN110838550 A CN 110838550A CN 201810927407 A CN201810927407 A CN 201810927407A CN 110838550 A CN110838550 A CN 110838550A
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emitting unit
quantum dot
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CN110838550B (en
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眭俊
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
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    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
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Abstract

The invention provides a hybrid light-emitting diode which comprises an anode and a cathode which are oppositely arranged, and a laminated structure arranged between the anode and the cathode, wherein the laminated structure is formed by laminating a quantum dot light-emitting unit/a charge generation layer/an organic light-emitting unit, the quantum dot light-emitting unit comprises a quantum dot light-emitting layer, the organic light-emitting unit layer comprises an organic light-emitting layer, and the charge generation layer contains a metal nanowire, an electron injection material and a hole injection material.

Description

Mixed type light-emitting diode and preparation method thereof
Technical Field
The invention belongs to the technical field of display, and particularly relates to a mixed type light-emitting diode and a preparation method thereof.
Background
Organic Light Emitting Diodes (OLEDs) have become a mainstream technology in the display technology field because of their excellent display properties, such as self-luminescence, simple structure, ultra-lightness and thinness, fast response speed, wide viewing angle, low power consumption, flexible display, etc. Quantum dot light emitting diodes (QLEDs) have the advantages of saturated emitted light color and adjustable wavelength, and have high photoluminescence and electroluminescence quantum yields, which have been competitive with OLEDs in recent years. However, the performance, stability and lifetime of the QLED device are to be improved, and there is a great gap from industrialization. At present, a device structure formed by connecting a QLED and an OLED in series is adopted to take the advantages of the QLED and the OLED into consideration, but most of series devices emit white light, a series structure with full-color display is not adopted, an injection energy level barrier is generated between a charge generation layer in the series structure and a hole injection layer and an electron injection layer on the upper side and the lower side, injection of holes and electrons is blocked, meanwhile, the impedance of the charge generation layer is large, and the luminous efficiency of the devices after series connection is reduced. Therefore, the prior art needs to be improved and developed.
Disclosure of Invention
The invention aims to provide a hybrid light emitting diode and a preparation method thereof, and aims to solve the problem of low luminous efficiency of the existing series device of a QLED and an OLED due to energy level barrier and self impedance of a charge generation layer.
In order to achieve the purpose, the invention adopts the following technical scheme:
in one aspect, the present invention provides a hybrid light emitting diode including an anode and a cathode disposed opposite to each other, and a stacked structure disposed between the anode and the cathode, the stacked structure being formed by stacking a quantum dot light emitting unit/a charge generation layer/an organic light emitting unit, wherein,
the quantum dot light-emitting unit comprises a quantum dot light-emitting layer, the organic light-emitting unit layer comprises an organic light-emitting layer, and the charge generation layer contains a metal nanowire, an electron injection material and a hole injection material.
In another aspect, the present invention provides a method for manufacturing a hybrid light emitting diode, comprising the steps of:
providing a bottom electrode, and preparing a quantum dot light-emitting unit comprising a quantum dot light-emitting layer on the bottom electrode;
preparing a charge generation layer on the surface of the quantum dot light-emitting unit far away from the bottom electrode;
preparing an organic light-emitting unit containing an organic light-emitting layer on the surface of the charge generation layer far away from the bottom electrode, wherein the charge generation layer contains a metal nanowire, an electron injection material and a hole injection material;
preparing a top electrode on the surface of the organic light-emitting unit far away from the bottom electrode;
wherein the bottom electrode is an anode and the top electrode is a cathode; or
The bottom electrode is a cathode and the top electrode is an anode.
The mixed type light-emitting diode provided by the invention has the advantages that the quantum dot light-emitting diode and the organic light-emitting diode are connected in series and mixed for use, the advantages of the quantum dot light-emitting diode and the organic light-emitting diode are integrated, and the light-emitting efficiency, the service life and the working stability of a light-emitting device are improved. On the basis, the electron injection material and the hole injection material are mixed to be used as the composition material of the charge generation layer, so that the hole injection difficulty and the electron injection difficulty of the charge generation layer, the quantum dot light-emitting unit and the organic light-emitting unit can be reduced, and the efficiency of the light-emitting device is improved. Meanwhile, the metal nanowires are added into the charge generation layer, and the special nanostructures of the metal nanowires can be mutually overlapped to form a conductive network structure, so that the conductivity of the charge generation layer is increased, the driving voltage is reduced, the power consumption is reduced, the injection of electron holes is more balanced, and the light-emitting performance of the light-emitting device is further improved. Therefore, the problem of low luminous efficiency caused by insufficient conductivity of the charge generation layer and injection energy level obstacle between adjacent functional layers in the serial structure of the quantum dot light-emitting diode and the organic light-emitting diode is solved.
The preparation method of the mixed type light-emitting diode provided by the invention only needs to sequentially prepare the quantum dot light-emitting unit containing the quantum dot light-emitting layer, the charge generation layer, the organic light-emitting unit containing the organic light-emitting layer and the top electrode on the surface of the bottom electrode, and the method is simple and controllable and can realize large-scale preparation. In addition, because the charge generation layer contains the metal nanowires, the electron injection material and the hole injection material, on one hand, the hole injection difficulty and the electron injection difficulty of the charge generation layer, the quantum dot light-emitting unit and the organic light-emitting unit can be reduced, and the efficiency of the light-emitting device is improved. On the other hand, the special nano structures of the metal nanowires can be mutually overlapped to form a conductive network structure, so that the conductivity of the charge generation layer is increased, the driving voltage is reduced, the power consumption is reduced, the injection of electron holes is more balanced, and the luminous performance of the light-emitting device is further improved.
Drawings
Fig. 1 is a schematic structural diagram of a hybrid light emitting diode provided in embodiment 1 of the present invention;
fig. 2 is a schematic structural diagram of a hybrid light emitting diode provided in embodiment 2 of the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the description of the present invention, it is to be understood that the terms "first", "second" and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
An aspect of embodiments of the present invention provides a hybrid light emitting diode including an anode and a cathode disposed opposite to each other, and a stacked structure disposed between the anode and the cathode, the stacked structure being formed by stacking a quantum dot light emitting unit/a charge generation layer/an organic light emitting unit, wherein,
the quantum dot light-emitting unit comprises a quantum dot light-emitting layer, the organic light-emitting unit layer comprises an organic light-emitting layer, and the charge generation layer contains a metal nanowire, an electron injection material and a hole injection material.
The mixed type light-emitting diode provided by the embodiment of the invention has the advantages that the quantum dot light-emitting diode and the organic light-emitting diode are connected in series and mixed for use, the advantages of the quantum dot light-emitting diode and the organic light-emitting diode are integrated, and the light-emitting efficiency, the service life and the working stability of the light-emitting device are improved. On the basis, the electron injection material and the hole injection material are mixed to be used as the composition material of the charge generation layer, so that the hole injection difficulty and the electron injection difficulty of the charge generation layer, the quantum dot light-emitting unit and the organic light-emitting unit can be reduced, and the efficiency of the light-emitting device is improved. Meanwhile, the metal nanowires are added into the charge generation layer, and the special nanostructures of the metal nanowires can be mutually overlapped to form a conductive network structure, so that the conductivity of the charge generation layer is increased, the driving voltage is reduced, the power consumption is reduced, the injection of electron holes is more balanced, and the light-emitting performance of the light-emitting device is further improved. Therefore, the problem of low luminous efficiency caused by insufficient conductivity of the charge generation layer and injection energy level obstacle between adjacent functional layers in the serial structure of the quantum dot light-emitting diode and the organic light-emitting diode is solved.
In the embodiment of the invention, the quantum dot light-emitting unit comprises a quantum dot light-emitting layer, the organic light-emitting unit layer comprises an organic light-emitting layer, and the quantum dot light-emitting layer and the organic light-emitting layer are used for providing light-emitting materials to realize the light emission of the light-emitting device.
In the serial structure obtained by connecting the quantum dot light-emitting unit and the organic light-emitting diode in series through the charge generation layer, the positions of the quantum dot light-emitting unit and the organic light-emitting diode relative to the cathode or the anode are not strictly limited. In one embodiment, the quantum dot light emitting unit is disposed at one end near the anode, and the organic light emitting unit is disposed at one end near the cathode. In another embodiment, the quantum dot light emitting unit is disposed at one end near the cathode, and the organic light emitting unit is disposed at one end near the anode.
Further, the hybrid light emitting diode further comprises a substrate. The anode of the hybrid light emitting diode is arranged on the substrate to form a positive structure; alternatively, the cathode is disposed on the substrate to form an inverted structure. It should be understood that, regardless of the hybrid type light emitting diode being of a face-up structure or an inverted structure, when a quantum dot light emitting unit, the organic light emitting diode contains a hole or electron functional layer, it follows that the hole functional layer in the same light emitting unit is disposed adjacent to the anode, and the electron functional layer in the same light emitting unit is disposed adjacent to the cathode. The hybrid light emitting diode may further form a package structure outside a frame formed by the cathode and the anode.
Specifically, in the embodiment of the present invention, the quantum dot light-emitting unit may further and preferably include other functional layers in addition to the necessary quantum dot light-emitting layer. Preferably, the quantum dot light-emitting unit further comprises a first hole function layer and/or a first electron function layer disposed on the surface of the quantum dot light-emitting layer, the first hole function layer is disposed on the surface of the quantum dot light-emitting layer adjacent to the anode, and the first electron function layer is disposed on the surface of the quantum dot light-emitting layer adjacent to the cathode, wherein the first hole function layer comprises a first hole injection layer and/or a first hole transport layer, and the first electron function layer comprises a first electron injection layer and/or a first electron transport layer. By arranging the first hole functional layer and/or the first electronic functional layer, the injection of electrons and holes can be regulated, controlled and balanced, and the light-emitting performance is improved. In a preferred embodiment, the quantum dot light-emitting unit includes a first hole injection layer, and a first hole transport layer, a quantum dot light-emitting layer, a first electron transport layer, and a first electron injection layer stacked on the first hole injection layer, wherein the first electron injection layer is disposed adjacent to the cathode, and the first hole injection layer is disposed adjacent to the anode.
Similarly, the organic light-emitting unit may further include, and preferably includes, other functional layers in addition to the necessary organic light-emitting layer. Preferably, the organic light emitting unit further includes a second hole functional layer and/or a second electron functional layer disposed on a surface of the organic light emitting layer, the second hole functional layer is disposed on a surface of the organic light emitting layer adjacent to the anode, and the second electron functional layer is disposed on a surface of the organic light emitting layer adjacent to the cathode, wherein the second hole functional layer includes a second hole injection layer and/or a second hole transport layer, and the second electron functional layer includes a second electron injection layer and/or a second electron transport layer. As a most preferred embodiment, the organic light emitting unit includes a second hole injection layer, and a second hole transport layer, an organic light emitting layer, a second electron transport layer, and a second electron injection layer stacked on the second hole injection layer, wherein the second electron injection layer is disposed adjacent to the cathode, and the second hole injection layer is disposed adjacent to the anode.
Further preferably, the quantum dot light-emitting unit comprises a first hole injection layer, and a first hole transport layer, a quantum dot light-emitting layer, a first electron transport layer and a first electron injection layer which are arranged in a stacked manner on the first hole injection layer, wherein the first electron injection layer is arranged adjacent to the cathode, and the first hole injection layer is arranged adjacent to the anode;
the organic light emitting unit includes a second hole injection layer, and a second hole transport layer, an organic light emitting layer, a second electron transport layer, and a second electron injection layer stacked on the second hole injection layer, wherein the second electron injection layer is disposed adjacent to the cathode, and the second hole injection layer is disposed adjacent to the anode.
On the basis of the above-described embodiment, the stacked structure includes a red stacked structure, a green stacked structure, and a blue stacked structure arranged side by side perpendicular to the light emission direction, wherein,
the quantum dot light-emitting unit in the red laminated structure is a red quantum dot light-emitting unit, and the organic light-emitting unit is a red organic light-emitting unit;
the quantum dot light-emitting unit in the green laminated structure is a green quantum dot light-emitting unit, and the organic light-emitting unit is a green organic light-emitting unit;
the quantum dot light-emitting unit in the blue laminated structure is a blue quantum dot light-emitting unit, and the organic light-emitting unit is a blue organic light-emitting unit.
In the embodiment of the present invention, the anode, the red stacked structure, and the cathode, along a light emitting direction, form a red light emitting unit; the anode, the blue stacked structure and the cathode form a blue light emitting unit; the anode, the green laminated structure, and the cathode form a green light emitting unit. The red quantum dot light-emitting unit, the blue quantum dot light-emitting unit and the green quantum dot light-emitting unit form a QLED light-emitting unit in a direction perpendicular to the light-emitting direction; the red organic light-emitting unit, the blue organic light-emitting unit and the green organic light-emitting unit form an OLED light-emitting unit. By overlapping the organic light-emitting unit on the quantum dot light-emitting unit with the same color, the advantages of the quantum dot light-emitting diode and the organic light-emitting diode can be integrated, and the efficiency, the service life and the stability of the device are improved.
As a specific preferred embodiment, the hybrid light emitting diode comprises, from bottom to top, a substrate, an anode disposed on the substrate, a QLED light emitting unit disposed on the anode, a charge generating layer disposed on the QLED light emitting unit, an OLED light emitting unit disposed on the charge generating layer, and a cathode disposed on the OLED light emitting unit, wherein the charge generating layer contains a metal nanowire, an electron injection material, and a hole injection material, the QLED light emitting unit comprises a blue QLED light emitting unit, a green QLED light emitting unit, and a red QLED light emitting unit disposed side by side on a surface of the anode, the OLED light emitting unit comprises a blue OLED light emitting unit, a green OLED light emitting unit, and a red OLED light emitting unit disposed side by side on a surface of the charge generating layer, and the red QLED light emitting unit is disposed corresponding to the red OLED light emitting unit in a direction perpendicular to the charge generating layer, the blue QLED light-emitting unit is arranged corresponding to the blue OLED light-emitting unit, and the green QLED light-emitting unit is arranged corresponding to the green OLED light-emitting unit. Here, the corresponding arrangement means that, in a direction perpendicular to the charge generation layer, the projection of the red QLED light emitting unit can completely block the red OLED light emitting unit, or the projection of the red OLED light emitting unit can completely block the red QLED light emitting unit; for the same reason, in the direction perpendicular to the charge generation layer, the projections generated by the blue QLED light-emitting unit and the blue OLED light-emitting unit can be mutually covered, and the projections generated by the green QLED light-emitting unit and the green OLED light-emitting unit can also be mutually covered. Further, the QLED light-emitting unit includes a first hole injection layer, a first hole transport layer, a quantum dot light-emitting layer (blue quantum dot light-emitting layer, green quantum dot light-emitting layer, red quantum dot light-emitting layer), a first electron transport layer, and a first electron injection layer, which are stacked on the surface of the anode; the OLED light-emitting unit comprises a second hole injection layer, a second hole transmission layer, an organic light-emitting layer (a blue organic light-emitting layer, a green organic light-emitting layer and a red organic light-emitting layer), a second electron transmission layer and a second electron injection layer which are arranged on the surface of the charge generation layer in a stacking mode.
As another specific embodiment, the hybrid light emitting diode comprises, from bottom to top, a substrate, an anode disposed on the substrate, a QLED light emitting unit disposed on the anode, a charge generating layer disposed on the QLED light emitting unit, an OLED light emitting unit disposed on the charge generating layer, and a cathode disposed on the OLED light emitting unit, wherein the charge generating layer contains a metal nanowire, an electron injection material, and a hole injection material, the QLED light emitting unit comprises a blue QLED light emitting unit, a green QLED light emitting unit, and a red QLED light emitting unit disposed side by side on a surface of the anode, the OLED light emitting unit comprises a blue OLED light emitting unit, a green OLED light emitting unit, and a red OLED light emitting unit disposed side by side on a surface of the charge generating layer, and the red QLED light emitting unit is disposed corresponding to the red OLED light emitting unit in a direction perpendicular to the charge generating layer, the blue QLED light-emitting unit is arranged corresponding to the blue OLED light-emitting unit, and the green QLED light-emitting unit is arranged corresponding to the green OLED light-emitting unit. Here, the corresponding arrangement means that, in a direction perpendicular to the charge generation layer, the projection of the red QLED light emitting unit can completely block the red OLED light emitting unit, or the projection of the red OLED light emitting unit can completely block the red QLED light emitting unit; for the same reason, in the direction perpendicular to the charge generation layer, the projections generated by the blue QLED light-emitting unit and the blue OLED light-emitting unit can be mutually covered, and the projections generated by the green QLED light-emitting unit and the green OLED light-emitting unit can also be mutually covered. Further, the QLED light-emitting unit includes a first hole injection layer, a first hole transport layer, a quantum dot light-emitting layer (blue quantum dot light-emitting layer, green quantum dot light-emitting layer, red quantum dot light-emitting layer), and a first electron transport layer, which are stacked on the surface of the anode; the OLED light-emitting unit comprises a second hole transport layer, an organic light-emitting layer (a blue organic light-emitting layer, a green organic light-emitting layer and a red organic light-emitting layer), a second electron transport layer and a second electron injection layer which are arranged on the surface of the charge generation layer in a laminated mode.
In the two embodiments, in the QLED light emitting unit, the materials of the first hole injection layer, the first hole transport layer, the first electron transport layer, and the first electron injection layer of the light emitting units with different colors may be the same or different. Preferably, in order to simplify the manufacturing process, in the QLED light emitting unit, the material of the first hole injection layer, the material of the first hole transport layer, the material of the first electron transport layer, and the material of the first electron injection layer of each light emitting unit are the same. In the OLED light-emitting unit, the materials of the second hole injection layer, the second hole transport layer, the second electron transport layer and the second electron injection layer of the light-emitting units with different colors can be the same or different. Preferably, in order to simplify the manufacturing process, in the OLED light emitting unit, the material of the second hole injection layer of each light emitting unit is the same, the material of the second hole transport layer of each light emitting unit is the same, the material of the second electron transport layer of each light emitting unit is the same, and the material of the second electron injection layer of each light emitting unit is the same.
Specifically, the anode is preferably, but not limited to, a TFT.
The charge generation layer contains metal nanowires, an electron injection material and a hole injection material. Preferably, the charge generation layer is made of a mixture formed by metal nanowires, an electron injection material and a hole injection material, so that the energy level barriers between the QLED light-emitting unit and the charge generation layer and between the charge generation layer and the OLED light-emitting unit are reduced, and the light-emitting efficiency of the device is improved. Further preferably, the sum of the weight percentages of the electron injection material and the hole injection material is 70 to 95 percent, namely, the weight percentage of the metal nanowire is 5 to 30 percent, based on 100 percent of the total weight of the mixture. If the content of the metal nanowires in the mixture is too low, the metal nanowires are difficult to form a conductive network, or the stability of the formed conductive network is poor; if the content of the metal nanowire is too high, electrons and holes generated by the electron injection layer and the hole injection layer are reduced, so that even though an excellent conductive network structure is provided, carriers finally transmitted to a light emitting material are reduced due to the reduction of generated charges, composite light emission is reduced, and light emitting efficiency is reduced.
Still further preferably, the volume ratio of the electron injecting material to the hole injecting material in the mixture is 1:1 to 1:10, thereby making the injection of electron holes more balanced.
In the charge generation layer, preferably, the length-diameter ratio of the metal nanowire is greater than or equal to 1000, so that a more stable conductive network structure is favorably constructed, the conductivity of the charge generation layer is increased, and the injection balance of electron holes is promoted. Particularly preferably, the metal nanowire is at least one selected from Au nanowire, Ag nanowire and Cu nanowire.
In the charge generation layer, the selection of the electron injection material and the hole injection material is related to the structure of the hybrid light emitting diode. Specifically, the electron injection material is selected from electron injection materials of the light emitting unit where the electron function layer adjacent to the charge generation layer is located, and the hole injection material is selected from hole injection materials of the light emitting unit where the hole function layer adjacent to the charge generation layer is located, so that the difficulty of electron injection and hole injection between the charge generation layer and the adjacent light emitting unit can be effectively reduced, and the efficiency of the device is improved. Specifically, when the quantum dot light emitting unit is disposed at an end close to the anode and the organic light emitting unit is disposed at an end close to the cathode in the hybrid type light emitting diode, the electron injection material in the charge generation layer is selected from an electron injection material of the quantum dot light emitting unit and the hole injection material is selected from a hole injection material of the organic light emitting unit. In contrast, when the quantum dot light emitting unit is disposed at one end near the cathode and the organic light emitting unit is disposed at one end near the anode in the hybrid type light emitting diode, the hole injection material in the charge generation layer is selected from the hole injection materials of the quantum dot light emitting unit and the electron injection material is selected from the electron injection materials of the organic light emitting unit. It should be noted that, when the electron injection material and the hole injection material in the charge generation layer do not satisfy the requirement that "the electron injection material is selected from an electron injection material of a light emitting unit in which an electron functional layer adjacent to the charge generation layer is located, and the hole injection material is selected from a hole injection material of a light emitting unit in which a hole functional layer adjacent to the charge generation layer is located", not only the difficulty of electron injection and hole injection between the charge generation layer and the adjacent light emitting unit cannot be reduced, but also the difficulty of electron injection and hole injection between the charge generation layer and the adjacent light emitting unit can be increased due to the increase in energy price difference.
The material of the first hole injection layer can adopt the hole injection material of the conventional quantum dot light emitting diode, including but not limited to copper phthalocyanine (CuPc), polyethylenedioxythiophene/poly (styrene sulfonate) (PEDOT/PSS), 4',4 ″ -tris [ 2-naphthylphenylamino ] triphenylamine (TNATA), nickel oxide, molybdenum oxide, tungsten oxide. The thickness of the first hole injection layer is selected from conventional thicknesses, preferably from 30 to 60 nm.
The material of the first hole transport layer can be the hole transport material of a conventional quantum dot light emitting diode, including but not limited to TPD, BPD, NPB, TAD (please provide a chinese explanation of the terminology, thanks |) and their derivatives. The thickness of the first hole transport layer is selected from conventional thicknesses, preferably from 20 to 60 nm.
Specifically, the TPD is N, N '-bis (3-methylphenyl) -N, N' -diphenyl-1, 1 '-biphenyl-4, 4' -diamine, and the structure is shown as follows:
Figure BDA0001765743820000101
the BPD structure is as follows:
the NPB is N, N '-diphenyl-N, N' - (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine, and the structure is shown as follows:
Figure BDA0001765743820000103
the TAD structure is as follows:
Figure BDA0001765743820000111
the material of the first electron injection layer can adopt the electron injection material of the conventional quantum dot light emitting diode, including but not limited to alkali metal fluoride, alkali metal compound, such as NaF material. The thickness of the first electron injection layer is selected from conventional thicknesses, preferably 0.5 to 5 nm.
The material of the first electron transport layer can adopt the electron transport material of the conventional quantum dot light emitting diode, including but not limited to PBD, BND and other oxazole derivatives, Alq3And metal chelates, ZnO, BaO, and other metal oxides. The thickness of the first electron transport layer is selected from conventional thicknesses, preferably from 30 to 60 nm.
The blue quantum dot luminescent material in the blue quantum dot luminescent layer is selected from blue quantum dots in a conventional blue quantum dot luminescent diode, and comprises one or more of II-VI compounds, III-V compounds, II-V compounds, III-VI compounds, IV-VI compounds, I-III-VI compounds, II-IV-VI compounds or IV elementary substances, and the blue luminescent material can be used in the embodiment as long as blue light is emitted. The thickness of the blue quantum dot light-emitting layer is selected from conventional thickness, and preferably is 10-30 nm.
The green quantum dot luminescent material in the green quantum dot luminescent layer is green quantum dots in a conventional green light quantum dot luminescent diode, and comprises one or more of II-VI compounds, III-V compounds, II-V compounds, III-VI compounds, IV-VI compounds, I-III-VI compounds, II-IV-VI compounds or IV elementary substances, and the green light can be used in the embodiment as long as green light is emitted. The thickness of the green quantum dot light-emitting layer is conventional, and preferably 15-35 nm.
The red quantum dot luminescent material in the red quantum dot luminescent layer is red quantum dots in a conventional red quantum dot luminescent diode, and comprises one or more of II-VI compounds, III-V compounds, II-V compounds, III-VI compounds, IV-VI compounds, I-III-VI compounds, II-IV-VI compounds or IV elementary substances, and the red light can be used in the embodiment. The thickness of the red quantum dot light-emitting layer is selected from conventional thickness, and preferably is 20-40 nm.
Preferably, the red quantum dot light-emitting layer is 3-5nm thicker than the green quantum dot light-emitting layer, and the green quantum dot light-emitting layer is 3-5nm thicker than the blue quantum dot light-emitting layer, so that full-color display can be better realized by regulating the thickness of the light-emitting layer.
The material of the second hole injection layer can adopt the hole injection material of the conventional organic light emitting diode, including but not limited to CuPc, PEDOT/PSS, TNATA, nickel oxide, molybdenum oxide, tungsten oxide. The thickness of the second hole injection layer is selected to be conventional, preferably 40-80 nm.
The material of the second hole transport layer may be a hole transport material of a conventional organic light emitting diode, including but not limited to TPD, BPD, NPB, TAD, and derivatives thereof. The thickness of the second hole transport layer is selected to be conventional, preferably 50-90 nm.
The material of the second electron injection layer can adopt the electron injection material of the conventional organic light emitting diode, including but not limited to alkali metal fluoride, alkali metal compound, such as NaF material. The thickness of the second electron injection layer is selected from conventional thicknesses, preferably 0.1 to 1 nm.
The material of the second electron transport layer can adopt the electron transport material of the conventional organic light emitting diode, including but not limited toNot limited to oxazole derivatives such as PBD and BND, Alq3And metal chelates, ZnO, BaO, and other metal oxides. The thickness of the second electron transport layer is selected from conventional thicknesses, preferably from 10 to 35 nm.
The blue organic luminescent material in the blue organic luminescent layer selects blue fluorescent material and blue phosphorescent material which are conventionally used for blue organic light emitting diodes. The thickness of the blue organic light-emitting layer is selected from conventional thickness, preferably 20-60 nm.
The green organic light emitting material in the green organic light emitting layer is selected from green fluorescent materials and green phosphorescent materials which are conventionally used for green organic light emitting diodes. The thickness of the green organic light-emitting layer is selected from conventional thicknesses, and is preferably 30-70 nm.
The red organic luminescent material in the red organic luminescent layer is selected from red fluorescent materials and red phosphorescent materials which are conventionally used for red organic light emitting diodes. The thickness of the red organic light-emitting layer is selected from conventional thicknesses, and is preferably 40-80 nm.
Preferably, the red organic light-emitting layer is 8-10nm thicker than the green organic light-emitting layer, and the green organic light-emitting layer is 8-10nm thicker than the blue organic light-emitting layer, so that full-color display can be better realized by regulating the thickness of the light-emitting layer.
The cathode is selected from a low work function metal or alloy thereof, including but not limited to aluminum.
The mixed type light-emitting diode provided by the invention can be prepared by the following method.
In another aspect, an embodiment of the present invention provides a method for manufacturing a hybrid light emitting diode, including the following steps:
s01, providing a bottom electrode, and preparing a quantum dot light-emitting unit comprising a quantum dot light-emitting layer on the bottom electrode;
s02, preparing a charge generation layer on the surface of the quantum dot light-emitting unit far away from the bottom electrode;
s03, preparing an organic light-emitting unit containing an organic light-emitting layer on the surface, far away from the bottom electrode, of the charge generation layer, wherein the charge generation layer contains a metal nanowire, an electron injection material and a hole injection material;
s04, preparing a top electrode on the surface of the organic light-emitting unit far away from the bottom electrode;
wherein the bottom electrode is an anode and the top electrode is a cathode; or
The bottom electrode is a cathode and the top electrode is an anode.
The preparation method of the hybrid light-emitting diode provided by the embodiment of the invention only needs to sequentially prepare the quantum dot light-emitting unit containing the quantum dot light-emitting layer, the charge generation layer, the organic light-emitting unit containing the organic light-emitting layer and the top electrode on the surface of the bottom electrode, and the method is simple and controllable and can realize large-scale preparation. In addition, because the charge generation layer contains the metal nanowires, the electron injection material and the hole injection material, on one hand, the hole injection difficulty and the electron injection difficulty of the charge generation layer, the quantum dot light-emitting unit and the organic light-emitting unit can be reduced, and the efficiency of the light-emitting device is improved. On the other hand, the special nano structures of the metal nanowires can be mutually overlapped to form a conductive network structure, so that the conductivity of the charge generation layer is increased, the driving voltage is reduced, the power consumption is reduced, the injection of electron holes is more balanced, and the luminous performance of the light-emitting device is further improved.
Specifically, in step S01, it is preferable that the quantum dot light-emitting unit including the quantum dot light-emitting layer is prepared on the bottom electrode by a solution processing method. The solution processing methods include, but are not limited to, ink jet printing and coating. In addition, a quantum dot light-emitting unit containing a quantum dot light-emitting layer can be prepared on the bottom electrode by evaporation. When the quantum dot light-emitting unit comprises other functional layers, the functional layers can be sequentially deposited and prepared.
As one embodiment, a first hole injection layer is prepared on the bottom electrode (anode) by depositing (e.g., by evaporation, coating, ink-jet printing) the material of the first hole injection layer on the upper surface of the anode;
depositing (e.g., by evaporation, coating, ink-jet printing) a material of the first hole transport layer on the upper surface of the first hole injection layer to prepare a first hole transport layer on the first hole injection layer;
respectively carrying out ink-jet printing on blue quantum dots, green quantum dots and red quantum dots to the corresponding blue light-emitting units, green light-emitting units and red light-emitting units, and preparing quantum dot light-emitting layers on the first hole transport layer;
depositing (e.g., by evaporation, coating, ink-jet printing) the material of the first electron transport layer on the upper surface of the quantum dot light-emitting layer to prepare a first electron transport layer on the quantum dot light-emitting layer;
the material of the first electron injection layer is deposited (e.g., by evaporation, coating, ink jet printing) on the first electron transport layer, and the first electron injection layer is prepared on the first electron transport layer.
In the step S02, the charge generation layer is preferably formed on the surface of the quantum dot light emitting unit away from the bottom electrode by a solution processing method. The solution processing methods include, but are not limited to, ink jet printing and coating. In addition, a charge generation layer can be prepared on the surface of the quantum dot light-emitting unit far away from the bottom electrode through evaporation. Wherein the charge generation layer contains metal nanowires, an electron injection material and a hole injection material.
In step S03, an organic light-emitting unit including an organic light-emitting layer is preferably prepared on the surface of the charge generation layer away from the bottom electrode by a solution processing method. The solution processing methods include, but are not limited to, ink jet printing and coating. In addition, an organic light-emitting unit including an organic light-emitting layer can also be prepared on the surface of the charge generation layer away from the bottom electrode by evaporation. When the organic light-emitting unit comprises other functional layers, the functional layers can be deposited and prepared in sequence.
As one embodiment, a first hole injection layer is prepared on the bottom electrode (anode) by depositing (e.g., by evaporation, coating, ink-jet printing) the material of the first hole injection layer on the upper surface of the anode;
depositing (e.g., by evaporation, coating, ink-jet printing) a material of the first hole transport layer on the upper surface of the first hole injection layer to prepare a first hole transport layer on the first hole injection layer;
respectively carrying out ink-jet printing on blue quantum dots, green quantum dots and red quantum dots to the corresponding blue light-emitting units, green light-emitting units and red light-emitting units, and preparing quantum dot light-emitting layers on the first hole transport layer;
depositing (e.g., by evaporation, coating, ink-jet printing) the material of the first electron transport layer on the upper surface of the quantum dot light-emitting layer to prepare a first electron transport layer on the quantum dot light-emitting layer;
the material of the first electron injection layer is deposited (e.g., by evaporation, coating, ink jet printing) on the first electron transport layer, and the first electron injection layer is prepared on the first electron transport layer.
Depositing (e.g., by evaporation, coating, ink jet printing) a material of the second hole injection layer on the charge generation layer to produce a second hole injection layer on the charge generation layer;
depositing (e.g., by evaporation, coating, ink-jet printing) a material of the second hole transport layer on the second hole injection layer to form a second hole transport layer on the second hole injection layer;
respectively carrying out evaporation, coating and ink-jet printing on the blue organic light-emitting material, the green organic light-emitting material and the red organic light-emitting material on the corresponding blue light-emitting unit, the green light-emitting unit and the red light-emitting unit, and preparing an organic light-emitting layer on the second hole transport layer;
depositing (e.g., by evaporation, coating, ink-jet printing) a material of the second electron transport layer on the organic light-emitting layer to produce a second electron transport layer on the organic light-emitting layer;
a second electron injection layer is prepared on the second electron transport layer by depositing (e.g., by evaporation, coating, ink jet printing) the material of the second electron injection layer on the second electron transport layer.
In step S04, a top electrode is formed on a surface of the organic light emitting unit away from the bottom electrode, preferably by evaporation.
And further, carrying out packaging treatment to obtain the mixed type light-emitting device with the QLED and the OLED connected in series.
In the embodiments of the present invention, the materials used for preparing each layer of the hybrid light emitting diode are as described above, and are not described herein again.
The following description will be given with reference to specific examples.
Example 1
A hybrid light emitting diode, as shown in FIG. 1, comprises a substrate, an anode disposed on the substrate, a QLED light emitting unit disposed on the anode, a charge generating layer disposed on the QLED light emitting unit, an OLED light emitting unit disposed on the charge generating layer, and a cathode disposed on the OLED light emitting unit, wherein the charge generating layer contains a metal nanowire, an electron injection material and a hole injection material, the QLED light emitting unit comprises a blue QLED light emitting unit, a green QLED light emitting unit and a red QLED light emitting unit disposed side by side on the surface of the anode, the OLED light emitting unit comprises a blue OLED light emitting unit, a green OLED light emitting unit and a red OLED light emitting unit disposed side by side on the surface of the charge generating layer, and the red QLED light emitting unit is disposed corresponding to the red OLED light emitting unit in a direction perpendicular to the charge generating layer, the blue QLED light-emitting unit is arranged corresponding to the blue OLED light-emitting unit, and the green QLED light-emitting unit is arranged corresponding to the green OLED light-emitting unit. The QLED light-emitting unit comprises a first hole injection layer, a first hole transmission layer, a quantum dot light-emitting layer (a blue quantum dot light-emitting layer, a green quantum dot light-emitting layer and a red quantum dot light-emitting layer), a first electron transmission layer and a first electron injection layer which are arranged on the surface of the anode in a stacking mode; the OLED light-emitting unit comprises a second hole injection layer, a second hole transmission layer, an organic light-emitting layer (a blue organic light-emitting layer, a green organic light-emitting layer and a red organic light-emitting layer), a second electron transmission layer and a second electron injection layer which are arranged on the surface of the charge generation layer in a stacking mode.
The preparation method of the mixed type light-emitting diode comprises the following steps:
printing a water-soluble conductive polymer PEDOT on an anode through ink jet, drying in vacuum to form a film, annealing at 150 ℃ for 20min, wherein the thickness is 40nm, and preparing a first hole injection layer;
printing TPD solution on the first hole injection layer through ink jet, after vacuum drying and film forming, annealing at 200 ℃ for 30min, wherein the thickness is 35nm, and preparing a first hole transport layer on the first hole injection layer;
corresponding to the blue light-emitting unit, printing blue quantum dot (ZnSe) ink on the first hole transport layer by ink-jet, vacuum drying to form a film, and carrying out vacuum annealing at 85 ℃ for 15min to obtain a film with a thickness of 20 nm;
corresponding to the green light-emitting unit, printing green quantum dot (CdSe) ink on the first hole transport layer through ink jet, vacuum drying to form a film, and then carrying out vacuum annealing at 85 ℃ for 15min to obtain a film with the thickness of 25 nm;
corresponding to the red luminous unit, printing red quantum dot (CdTe) ink on the first hole transport layer by ink jet, vacuum drying to form a film, and vacuum annealing at 85 deg.C for 15min to obtain a film with a thickness of 30 nm;
printing ZnO ink on the quantum dot light-emitting layer by ink-jet, vacuum-drying to form a film, vacuum-annealing at 85 ℃ for 30min to obtain a first electron transmission layer with a thickness of 40nm on the quantum dot light-emitting layer;
evaporating a NaF material on the first electron transport layer by 1nm in thickness, and preparing a first electron injection layer on the first electron transport layer;
mixing NaF solution and PEDOT solution according to the volume ratio of 1:10, mixing, adding 25% of Ag nanowire dispersion liquid by mass, uniformly mixing, printing the mixed solution on a first electron injection layer through ink jet, carrying out vacuum drying to form a film, annealing at 150 ℃ for 25min, and preparing a charge generation layer on the first electron injection layer, wherein the thickness of the charge generation layer is 25 nm;
printing a water-soluble conductive polymer PEDOT on the charge generation layer through ink jet, drying in vacuum to form a film, annealing at 150 ℃ for 20min to obtain a second hole injection layer with the thickness of 60nm, and preparing a second hole injection layer on the charge generation layer;
printing the TPD solution on the second hole injection layer through ink jet, drying in vacuum to form a film, annealing at 200 ℃ for 30min to obtain a second hole transport layer with the thickness of 70nm, and preparing the second hole transport layer on the second hole injection layer;
doping TBP into an AND, printing the mixture on a second hole transport layer through ink jet, drying the mixture in vacuum to form a film, annealing the film for 15min at 150 ℃ to obtain a blue organic light-emitting layer with the thickness of 40nm on the second hole transport layer;
with Alq3The main luminescent material and the green fluorescent doping system are subjected to ink-jet printing on the second hole transport layer, after vacuum drying and film forming, annealing is carried out at 150 ℃ for 15min, the thickness is 50nm, and a green organic luminescent layer is prepared on the second hole transport layer;
with Alq3A main luminescent material and a multi-doping system doped with various red fluorescent materials are subjected to vacuum drying to form a film, the film is annealed for 15min at 150 ℃ and the thickness is 60nm, and a red organic luminescent layer is prepared on the second hole transport layer;
a second electron transport material was prepared on an organic light emitting material by using Novaled164: Liq (a mixed material of Novaled164 and Liq, wherein Novaled164 represents Novaled corporation, and 164 is a code, that is, a product model is Novaled 164) in a ratio of 4:6 by vapor deposition on the organic light emitting layer to a thickness of 25nm,
evaporating LiF on the second electron transport layer with the thickness of 0.5nm, and preparing a second electron injection layer on the second electron transport layer;
preparing an Al cathode on the second electron injection layer, wherein the thickness of the Al cathode is 150 nm;
and packaging all functional layers between the anode and the cathode through UV frame glue and a drying sheet to obtain a complete device.
In this embodiment 1, the OLED light-emitting units with the same light-emitting color are stacked in series on the corresponding QLED light-emitting unit, so that the advantages of high color saturation of the QLED, long service life of the OLED, and the like can be both considered, and full-color light emission can be realized. In addition, by mixing the electron injection layer (first electron injection layer) of the QLED light emitting unit and the hole injection layer (second hole injection layer) of the OLED light emitting unit into the charge generation layer, injection level obstacles between the charge generation layer and the electron injection layer of the QLED light emitting unit and the hole injection layer of the OLED light emitting unit can be reduced, and driving voltage and power consumption can be reduced. Simultaneously, the Ag nanowires are added into the charge generation layer, and can be mutually lapped together to form a conductive network structure due to the high length-diameter ratio of the Ag nanowires, so that the conductivity of the charge generation layer is improved, the driving voltage is reduced, and the power consumption is reduced.
Example 2
A hybrid light emitting diode, as shown in FIG. 2, comprises a substrate, an anode disposed on the substrate, a QLED light emitting unit disposed on the anode, a charge generating layer disposed on the QLED light emitting unit, an OLED light emitting unit disposed on the charge generating layer, and a cathode disposed on the OLED light emitting unit, wherein the charge generating layer contains a metal nanowire, an electron injection material, and a hole injection material, the QLED light emitting unit comprises a blue QLED light emitting unit, a green QLED light emitting unit, and a red QLED light emitting unit disposed side by side on the surface of the anode, the OLED light emitting unit comprises a blue OLED light emitting unit, a green OLED light emitting unit, and a red OLED light emitting unit disposed side by side on the surface of the charge generating layer, and the red QLED light emitting unit is disposed corresponding to the red OLED light emitting unit in a direction perpendicular to the charge generating layer, the blue QLED light-emitting unit is arranged corresponding to the blue OLED light-emitting unit, and the green QLED light-emitting unit is arranged corresponding to the green OLED light-emitting unit. The QLED light-emitting unit comprises a first hole injection layer, a first hole transmission layer, a quantum dot light-emitting layer (a blue quantum dot light-emitting layer, a green quantum dot light-emitting layer and a red quantum dot light-emitting layer) and a first electron transmission layer which are arranged on the surface of the anode in a stacking manner; the OLED light-emitting unit comprises a second hole injection layer, a second hole transmission layer, organic light-emitting layers (a blue organic light-emitting layer, a green organic light-emitting layer and a red organic light-emitting layer) and a second electron transmission layer which are arranged on the surface of the charge generation layer in a stacking mode.
The preparation method of the mixed type light-emitting diode comprises the following steps:
printing a water-soluble conductive polymer PEDOT on an anode through ink jet, drying in vacuum to form a film, annealing at 150 ℃ for 20min, wherein the thickness is 40nm, and preparing a first hole injection layer;
printing TPD solution on the first hole injection layer through ink jet, after vacuum drying and film forming, annealing at 200 ℃ for 30min, wherein the thickness is 35nm, and preparing a first hole transport layer on the first hole injection layer;
corresponding to the blue light-emitting unit, printing blue quantum dot (ZnSe) ink on the first hole transport layer by ink-jet, vacuum drying to form a film, and carrying out vacuum annealing at 85 ℃ for 15min to obtain a film with a thickness of 20 nm;
corresponding to the green light-emitting unit, printing green quantum dot (CdSe) ink on the first hole transport layer through ink jet, vacuum drying to form a film, and then carrying out vacuum annealing at 85 ℃ for 15min to obtain a film with the thickness of 25 nm;
corresponding to the red luminous unit, printing red quantum dot (CdTe) ink on the first hole transport layer by ink jet, vacuum drying to form a film, and vacuum annealing at 85 deg.C for 15min to obtain a film with a thickness of 30 nm;
printing ZnO ink on the quantum dot light-emitting layer by ink-jet, vacuum-drying to form a film, vacuum-annealing at 85 ℃ for 30min to obtain a first electron transmission layer with a thickness of 40nm on the quantum dot light-emitting layer;
mixing NaF solution and PEDOT solution according to the volume ratio of 1:10, mixing, adding 25% of Ag nanowire dispersion liquid by mass, uniformly mixing, printing the mixed solution on a first electron transmission layer by ink-jet, vacuum drying to form a film, annealing at 150 ℃ for 25min, and preparing a charge generation layer with the thickness of 30 nm;
printing TPD solution on the second hole injection layer by ink jet, vacuum drying to form film, annealing at 200 deg.C for 30min to a thickness of 40nm, preparing a second hole transport layer on the charge generation layer,
doping TBP into an AND, printing the mixture on a second hole transport layer through ink jet, drying the mixture in vacuum to form a film, annealing the film for 15min at 150 ℃ to obtain a blue organic light-emitting layer with the thickness of 40nm on the second hole transport layer;
with Alq3The main luminescent material and the green fluorescent doping system are subjected to ink-jet printing on the second hole transport layer, after vacuum drying and film forming, annealing is carried out at 150 ℃ for 15min, the thickness is 50nm, and a green organic luminescent layer is prepared on the second hole transport layer;
with Alq3As host luminescent material and multiple red fluorescent dopantsAfter a mixed multi-doping system is subjected to vacuum drying and film forming, annealing is carried out for 15min at 150 ℃, the thickness is 60nm, and a red organic light-emitting layer is prepared on the second hole transport layer;
preparing a second electron transport material on the organic luminescent material by adopting Novaled164: Liq according to a ratio of 4:6 and evaporating on the organic luminescent layer with the thickness of 25nm,
evaporating LiF on the second electron transport layer with the thickness of 0.5nm, and preparing a second electron injection layer on the second electron transport layer;
preparing an Al cathode on the second electron injection layer, wherein the thickness of the Al cathode is 150 nm;
and packaging all functional layers between the anode and the cathode through UV frame glue and a drying sheet to obtain a complete device.
In this embodiment 2, the OLED light-emitting units with the same light-emitting color are stacked in series on the corresponding QLED light-emitting unit, so that the advantages of high color saturation of the QLED, long service life of the OLED, and the like can be both considered, and full-color light emission can be realized. In addition, by mixing the NaF solution serving as an electron injection layer material in the QLED light-emitting unit and the PEDOT solution serving as a hole injection layer material in the OLED light-emitting unit into the charge generation layer, two layers of the electron injection layer in the QLED light-emitting unit and the hole injection layer in the OLED light-emitting unit can be eliminated, the process is simplified, and the cost is reduced.
Meanwhile, the metal nanowires are added into the charge generation layer, and the nanowires can be mutually lapped together to form a conductive network structure due to the high length-diameter ratio of the nanowires, so that the conductivity of the charge generation layer is improved, the driving voltage is reduced, and the power consumption is reduced.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.

Claims (12)

1. A hybrid type light emitting diode comprising an anode and a cathode which are oppositely disposed, and a stacked structure which is formed by stacking a quantum dot light emitting unit/a charge generation layer/an organic light emitting unit and which is disposed between the anode and the cathode,
the quantum dot light-emitting unit comprises a quantum dot light-emitting layer, the organic light-emitting unit layer comprises an organic light-emitting layer, and the charge generation layer contains a metal nanowire, an electron injection material and a hole injection material.
2. The hybrid light emitting diode of claim 1, wherein the charge generation layer is made of a mixture of metal nanowires, an electron injection material, and a hole injection material.
3. The hybrid light emitting diode of claim 2, wherein the sum of the weight percentages of the electron injecting material and the hole injecting material is 70% to 95% based on 100% of the total weight of the mixture.
4. The hybrid light emitting diode according to claim 3, wherein the volume ratio of the electron injecting material to the hole injecting material in the mixture is 1:1 to 1: 10.
5. The hybrid light emitting diode according to any one of claims 1 to 4, wherein the metal nanowire has an aspect ratio of 1000 or more.
6. The hybrid light emitting diode according to any one of claims 1 to 4, wherein the quantum dot light emitting unit is disposed at one end near the anode, and the organic light emitting unit is disposed at one end near the cathode; or
The quantum dot light-emitting unit is arranged at one end close to the cathode, and the organic light-emitting unit is arranged at one end close to the anode.
7. The hybrid light emitting diode of claim 6, wherein the quantum dot light emitting unit further comprises a first hole functional layer and/or a first electron functional layer disposed on the surface of the quantum dot light emitting layer, and the first hole functional layer is disposed on the surface of the quantum dot light emitting layer adjacent to the anode, and the first electron functional layer is disposed on the surface of the quantum dot light emitting layer adjacent to the cathode, wherein,
the first hole function layer comprises a first hole injection layer and/or a first hole transport layer, and the first electron function layer comprises a first electron injection layer and/or a first electron transport layer.
8. The hybrid light emitting diode according to claim 6, wherein the organic light emitting unit further comprises a second hole functional layer and/or a second electron functional layer disposed on a surface of the organic light emitting layer, and the second hole functional layer is disposed on a surface of the organic light emitting layer adjacent to the anode, and the second electron functional layer is disposed on a surface of the organic light emitting layer adjacent to the cathode, wherein,
the second hole function layer comprises a second hole injection layer and/or a second hole transport layer, and the second electron function layer comprises a second electron injection layer and/or a second electron transport layer.
9. The hybrid light emitting diode according to claim 7 or 8, wherein the quantum dot light emitting unit comprises a first hole injection layer, and a first hole transport layer, a quantum dot light emitting layer, a first electron transport layer, and a first electron injection layer which are disposed in a stack on the first hole injection layer, wherein the first electron injection layer is disposed adjacent to the cathode, and the first hole injection layer is disposed adjacent to the anode;
the organic light emitting unit includes a second hole injection layer, and a second hole transport layer, an organic light emitting layer, a second electron transport layer, and a second electron injection layer stacked on the second hole injection layer, wherein the second electron injection layer is disposed adjacent to the cathode, and the second hole injection layer is disposed adjacent to the anode.
10. The hybrid light emitting diode of claim 7 or 8, wherein the quantum dot light emitting unit comprises a first hole injection layer, and a first hole transport layer, a quantum dot light emitting layer, a first electron transport layer, which are stacked on the first hole injection layer, wherein the first electron transport layer is disposed adjacent to the cathode and the first hole injection layer is disposed adjacent to the anode;
the organic light-emitting unit comprises a second hole transport layer, and an organic light-emitting layer, a second electron transport layer and a second electron injection layer which are arranged on the second hole transport layer in a stacking mode, wherein the second electron injection layer is arranged adjacent to the cathode, and the second hole transport layer is arranged adjacent to the anode.
11. The hybrid light emitting diode according to any one of claims 1 to 4 and 6 to 8, wherein the stacked structure comprises a red stacked structure, a green stacked structure and a blue stacked structure which are arranged side by side perpendicular to a light emitting direction, wherein,
the quantum dot light-emitting unit in the red laminated structure is a red quantum dot light-emitting unit, and the organic light-emitting unit is a red organic light-emitting unit;
the quantum dot light-emitting unit in the green laminated structure is a green quantum dot light-emitting unit, and the organic light-emitting unit is a green organic light-emitting unit;
the quantum dot light-emitting unit in the blue laminated structure is a blue quantum dot light-emitting unit, and the organic light-emitting unit is a blue organic light-emitting unit.
12. A preparation method of a hybrid light emitting diode is characterized by comprising the following steps:
providing a bottom electrode, and preparing a quantum dot light-emitting unit comprising a quantum dot light-emitting layer on the bottom electrode;
preparing a charge generation layer on the surface of the quantum dot light-emitting unit far away from the bottom electrode, wherein the charge generation layer contains a metal nanowire, an electron injection material and a hole injection material;
preparing an organic light-emitting unit containing an organic light-emitting layer on the surface of the charge generation layer far away from the bottom electrode;
preparing a top electrode on the surface of the organic light-emitting unit far away from the bottom electrode;
wherein the bottom electrode is an anode and the top electrode is a cathode; or
The bottom electrode is a cathode and the top electrode is an anode.
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