CN110838320A - Programming method and system of memory - Google Patents

Programming method and system of memory Download PDF

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Publication number
CN110838320A
CN110838320A CN201810940759.6A CN201810940759A CN110838320A CN 110838320 A CN110838320 A CN 110838320A CN 201810940759 A CN201810940759 A CN 201810940759A CN 110838320 A CN110838320 A CN 110838320A
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programming
voltage
amplification
memory
program
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贺元魁
潘荣华
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GigaDevice Semiconductor Beijing Inc
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GigaDevice Semiconductor Beijing Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells

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Abstract

The invention discloses a programming method and a system of a memory. The programming method of the memory comprises the following steps: a program timing B1 is a timing for applying a program voltage to the memory cell; applying a verify voltage to the memory cell at a verify timing Y1; if the verification fails, at least two programming voltages with amplification are applied to the memory cell again after the programming timing B1 to perform verification again, wherein the amplification D of the programming voltagevpgmAt least comprising a first amplification Dvpgm1And a second amplification Dvpgm2，Dvpgm1＞Dvpgm2The larger the programming times Q, the larger the amplification D of the programming voltageversThe smaller. The programming method and system of the memory have the advantage of improving the life of the memory.

Description

Programming method and system of memory
Technical Field
The embodiment of the invention relates to the technical field of memories, in particular to a programming method and system of a memory.
Background
The Nand flash memory is a nonvolatile memory and has the advantages of high rewriting speed, large storage capacity and the like. When the Nand flash memory is in programming operation, verification failure occurs, and after each verification failure, the amplitude of the programming voltage needs to be increased. In the prior art, the increased amplitudes of the programming voltages are equal every time the programming fails, and when the programming voltage is close to the programming threshold, the programming voltage is increased again, which causes the situation that the programming voltage is much larger than the programming threshold, affects the tunneling oxide film of the memory cell, and reduces the service life of the memory.
Therefore, how to increase the lifetime of the memory becomes a demand in the memory technology field.
Disclosure of Invention
The invention provides a programming method and a programming system of a memory, which aim to solve the technical problem that the service life of the memory is reduced during programming.
In a first aspect, an embodiment of the present invention provides a method for programming a memory, including the following steps: a program timing B1 is a timing for applying a program voltage to the memory cell; applying a verify voltage to the memory cell at a verify timing Y1; if the verification fails, at least two programming voltages with amplification are applied to the memory cell again after the programming timing B1 to perform verification again, wherein the amplification D of the programming voltagevpgmAt least comprising a first amplification Dvpgm1And a second amplification Dvpgm2，Dvpgm1＞Dvpgm2The larger the programming times Q, the larger the amplification D of the programming voltagevpgmThe smaller.
Preferably, the magnitude of the program voltage when the program voltage is applied to the memory cell at the program timing B1 is VpgmWhen the programming voltage is applied to the memory cell for the nth time, the amplitude of the programming voltage is Vpgm+(n-1)DvpgmWherein n is a positive integer and n is not less than 1, and D is increased according to stages along with the increase of the programming times nvpgmAnd decreases.
Preferably, the increase D of the programming voltagevpgmFurther comprising a third amplification Dvpgm3When the programming time Q is less than or equal to m1, the amplification of the programming voltage of each verification failure is a first amplification Dvpgm1When Q is more than m1 and less than or equal to m2, the amplification of the programming voltage of each verification failure is a second amplification Dvpgm2When Q is greater than m2, the amplification of the program voltage for each verification failure is a third amplification Dvpgm3M1 is a first threshold of the number of programming times, and m2 is a second threshold of the number of programming times.
Preferably, m1 is 3, and m2 is 4.
Preferably, at program timing B1, a program voltage is applied to the selected word line, a pass voltage is applied to the unselected word lines, 0V is applied to the selected bit line, and a positive voltage is applied to the unselected bit lines.
Preferably, the programming voltage ranges from 12V to 16V.
Preferably, at the verification timing Y1, a verification voltage is applied to the selected word line, the selected bit line is precharged to a precharge voltage, and a pass voltage is applied to the unselected word line; and then, discharging the selected bit line for the first time, comparing the voltage of the discharged bit line with a first judgment voltage, if the voltage of the discharged bit line is higher than the first judgment voltage, indicating that the verification is successful and the operation can be finished, and otherwise, indicating that the verification fails, storing data into the memory again and verifying.
Preferably, the verifying voltage ranges from 0V to 1V.
Preferably, the precharge voltage ranges from 1v to 1.2 v.
In a second aspect, the present invention also provides a programming system of a memory, the programming system of the memory including: a program module for applying a program voltage to the memory cell at a program timing B1; the verifying module is used for applying verifying voltage to the storage unit when verifying the time sequence Y1; if the verification fails, after the program timing sequence B1, the program module re-applies at least two programming voltages with amplification to the memory cell, the verification module performs the verification again, and the amplification D of the programming voltagevpgmAt least comprising a first amplification Dvpgm1And a second amplification Dvpgm2，Dvpgm1＞Dvpgm2The larger the programming times Q, the larger the amplification D of the programming voltagevpgmThe smaller.
Compared with the prior art, the invention provides the programming method and the system of the memory, after the verification fails, at least two programming voltages with amplification are applied to the memory cell again to perform the verification again, the larger the programming times is along with the increase of the time sequence, the larger the programming voltage is, the amplification of the programming voltage is reduced, the closer the programming voltage is to the programming threshold, the smaller the amplitude of the programming voltage increase after the verification fails each time is, even if the amplitude of the programming voltage exceeds the programming threshold, the amplitude of the programming voltage does not exceed the programming threshold a lot, thereby not influencing a tunneling oxide film of the memory cell, reducing the transient programming effect, prolonging the service life of the memory cell of the memory, and ensuring the programming speed and improving the programming efficiency because the programming voltage is large at first.
Drawings
FIG. 1 is a flow chart illustrating a method for programming a memory according to an embodiment of the invention.
Fig. 2 is a schematic chip structure diagram of a memory cell in embodiment a of the invention.
FIG. 3 is a circuit diagram of a memory array according to an embodiment of the present invention.
FIG. 4 is a waveform diagram of voltages at different times in a programming method of a memory according to embodiment A of the present invention.
FIG. 5 is a graph showing the variation of the magnitude of the program voltage with the increase of the number of verification failures in the embodiment A.
FIG. 6 is a block diagram of a programming system of a memory according to embodiment B of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Before discussing exemplary embodiments in more detail, it should be noted that some exemplary embodiments are described as processes or methods depicted as flowcharts. Although a flowchart may describe the steps as a sequential process, many of the steps can be performed in parallel, concurrently or simultaneously. In addition, the order of the steps may be rearranged. The process may be terminated when its operations are completed, but may have additional steps not included in the figure. The processes may correspond to methods, functions, procedures, subroutines, and the like.
Example A
Referring to fig. 1, fig. 1 is a flow chart illustrating a programming method of a memory according to an embodiment a of the present invention, the programming method of the memory is used for improving the endurance and the usability of read data of the memory to improve the lifespan of the memory, and the programming method of the memory includes the following steps:
step S1: a program timing B1 is a timing for applying a program voltage to the memory cell;
step S2: applying a verify voltage to the memory cell at a verify timing Y1;
step S3; if the verification fails, at least two programming voltages with amplification are applied to the memory cell again after the programming timing B1 to perform verification again, wherein the amplification D of the programming voltagevpgmAt least comprising a first amplification Dvpgm1And a second amplification Dvpgm2，Dvpgm1＞Dvpgm2The larger the programming times, the larger the programming voltage amplification DvpgmThe smaller.
Referring to fig. 2, fig. 2 is a schematic diagram of a chip structure of the memory unit 111. The memory cell 111 includes a substrate 1111, a source 1112, a drain 1113, a tunnel oxide film 1114, a floating gate 1115, and a control gate 1116, the substrate 1111 includes a P-well region thereon, the source 1112 and the drain 1113 are disposed in the P-well region, a channel is formed between the source 1112 and the drain 1113, the tunnel oxide film 1114 is formed over the channel between the source 1112 and the drain 1113, the floating gate 1115 is disposed on the tunnel oxide film 1114, and the control gate 1116 is disposed on the floating gate 1115. It will be appreciated that a dielectric film 1117 is disposed between the control gate 1116 and the floating gate 1115. When no charge is accumulated in the floating gate 1115, that is, when data "1" is written, the threshold value is in a negative state, and the memory cell 111 is turned on by the control gate 1116 being 0V. When electrons are accumulated in the floating gate 1115, that is, when data "0" is written, the threshold shift is positive, and the memory cell is turned off by the control gate 1116 being 0V. However, the memory cell is not limited to storing a single bit, and may store a plurality of bits.
In step S1, step S1 is a programming step, and data is written into the memory. The memory is preferably a NAND type memory. Referring to fig. 3, fig. 3 is a schematic circuit structure diagram of the memory array. The memory includes n word lines (WL1, WL2, …, WLn), m bit lines (BL1, BL2, …, BLm), a select gate line SGS, a select gate line SGD, and a common source line SL, and a memory cell portion identified by a dashed box 11 is referred to as a memory cell string. Each memory cell string includes a plurality of the above-described memory cells 111 (i.e., MC1 to MCn); a bit line side selection transistor TD connected to the memory cell MCn as one end portion; and a source-line-side selection transistor TS connected to the memory cell MC1 as the other end, the drain of the bit-line-side selection transistor TD being connected to the corresponding 1 bit line BL, and the source of the source-line-side selection transistor TS being connected to the common source line SL. The control gate of the memory cell 111 is connected to a word line WLi (i is 0 to n), the gate of the bit line side selection transistor TD is connected to the selection gate line SGD, and the gate of the source line side selection transistor TS is connected to the selection gate line SGS.
Referring to fig. 4 and 5 together, fig. 4 is a schematic diagram showing waveforms at different times of a programming method of a memory of the present invention, fig. 5 is a schematic diagram showing a variation of a magnitude of a programming voltage with an increase of verification failure times in embodiment a, and this embodiment provides a specific programming step, in which data is written into a memory cell MC1, and a programming voltage V is applied to a selected word line WL1 at a programming timing B1pgmA pass voltage is applied to unselected word lines WL2 to WLn, 0V is applied to selected bit line BLm, and a positive voltage is applied to unselected bit lines BL1 to BLm-1. The range of the program voltage Vpgm is 10-18V, and preferably 12V-16V. In a certain programming time, the memory cell with the lower initial threshold voltage has larger threshold voltage increment after being programmed, and conversely, the threshold voltage increment is smaller. Here, as will be understood by those skilled in the art, in the programming operation, it is usually necessary to apply a voltage of 0V to the select gate line SGS and a voltage of about 4V to the select gate line SGD to turn on the MOS transistor connected thereto.
In step S2, at the time of verifying timing Y1, a verify voltage is applied to the selected word line WL1 in the memory, the selected bit line BLm is precharged to the precharge voltage, and a pass voltage is applied to the unselected word lines WL2 to WLn; and then discharging the selected bit line BLm for the first time, comparing the voltage of the discharged bit line with a first judgment voltage, if the voltage of the selected bit line is higher than the first judgment voltage, indicating that the programming verification operation is successful, and ending the operation, otherwise, failing the verification, and storing data into the memory again. Preferably, the verify voltage ranges from 0V to 1V. The precharge voltage ranges from 1v to 1.2 v. It is understood that the program timing B1 is a period for simultaneously writing data to a memory cell or a plurality of memory cells, and the verify timing Y1 is a period for verifying a memory cell after writing data at the time of the program timing B1.
In step S3, the verify timing Y1 fails to verify, and the memory cell is applied with the increased amplitude D again at the programming timing B2-BnvpgmUntil the nth program voltage Vpgm+(n-1)Dvpgm(Wherein n is a positive integer, and n is greater than or equal to 1), and the verification is successful at the verification timing Yn. In this embodiment, the amplification of the programming voltage Dvpgm is inversely proportional to the number of programming times Q, D preferably increasing in stages with the number of programming times QvpgmAnd decreases.
Specifically, assuming that the first threshold of the programming frequency Q is m1, the second threshold of the programming frequency Q is m2, and when the programming frequency Q is less than or equal to the first threshold m1, the increase D of the programming voltage isvpgmIs Dvpgm1When the program time Q is greater than the first threshold value m1 of the program time Q and is less than or equal to the second threshold value m2 of the program time Q, the increase D of the program voltagevpgmIs Dvpgm2When the program number Q is greater than the second threshold value m2 of the program number Q, the increase D of the program voltagevpgmIs Dvpgm3. In this embodiment, the increase D of the programming voltagevpgm1Amplification D greater than programming voltagevpgm2Amplification of the programming voltage Dvpgm2Amplification D greater than programming voltagevpgm3The first threshold value m1 of the number of programming times Q is smaller than the second threshold value m2 of the number of programming times Q. In the embodiment, m1 is 3, and m2 is 4.
Specifically, when the program timing B2 is the 2 nd program time Q, and the program time Q is smaller than the first threshold m1, i.e., smaller than 2, the program voltage V is applied to the selected word line WL1pgm+Dvpgm1To the unselected productA pass voltage is applied to the selected word lines WL 2-WLn, 0V is applied to the selected bit line BLm, and a positive voltage is applied to the unselected bit lines BL 1-BLm-1. Program voltage V of program timing B2pgm+Dvpgm1Less than the first threshold m1 of the programming voltage.
At the verify timing Y2, a verify voltage is applied to the selected word line WL1 in the memory, the selected bit line BLm is precharged to the precharge voltage, and a pass voltage is applied to the unselected word lines WL2 to WLn; and then discharging the selected bit line BLm for a first time, comparing the voltage of the discharged bit line with a first judgment voltage, wherein the voltage of the selected bit line is lower than the first judgment voltage, and the verification fails.
When the program timing B3 is the 3 rd program time Q, the program time Q is equal to the first threshold m1, i.e., 3, the program voltage V is applied to the selected word line WL1pgm+Dvpgm1+Dvpgm1＝Vpgm+2Dvpgm1A pass voltage is applied to unselected word lines WL2 to WLn, 0V is applied to selected bit line BLm, and a positive voltage is applied to unselected bit lines BL1 to BLm-1.
At the verify timing Y3, a verify voltage is applied to the selected word line WL1 in the memory, the selected bit line BLm is precharged to the precharge voltage, and a pass voltage is applied to the unselected word lines WL2 to WLn; and then discharging the selected bit line BLm for a first time, comparing the voltage of the discharged bit line with a first judgment voltage, wherein the voltage of the selected bit line is lower than the first judgment voltage, and the verification fails.
According to the above program and verify method, the magnitude of the program voltage applied to the selected word line WL1 until the program timing B5 is Vpgm+2Dvpgm1+Dvpgm2+Dvpgm3Then, the discharged bit line voltage is greater than the first determination voltage, and the verification is successful.
When the programming times Q are less than or equal to m1, the amplification of the programming voltage of each verification failure is Dvpgm1When Q is more than m1 and less than or equal to m2, the amplification of the programming voltage of each verification failure is Dvpgm2When Q is larger than m2, the amplification of the program voltage per verification failure is Dvpgm3. In this embodiment, the program voltage is amplified by DvpgmThe variation is adjusted in three stages. Can understand that，m1、m2、Dvpgm1、Dvpgm2And Dvpgm3The values of (A) can be varied as desired, e.g. m1, m2, Dvpgm1、Dvpgm2And Dvpgm3The value of (c) may vary depending on the programmed threshold. It is understood that the increase change of the programming voltage can be divided into two stages or more than three stages, which is not limited in the present invention and falls within the protection scope of the present invention without departing from the concept of the present invention.
As the magnitude of the program voltage increases, the program voltage gradually approaches the program threshold. The programming times are increased, the amplitude of the programming voltage is increased, and the amplification of the programming voltage is increasedvpgmTherefore, after the amplitude of the programming voltage is close to the programming threshold, the verification failure increases the amplitude of the programming voltage again, and even if the amplitude of the programming voltage exceeds the programming threshold, the amplitude of the programming voltage does not exceed the programming threshold so as not to affect the tunnel oxide film 1114 of the memory cell 111, reduce the transient programming effect, improve the service life of the memory cell of the memory, and ensure the successful rate of programming.
Example B
Referring to fig. 6, fig. 6 is a block diagram of a programming system 12 of a memory according to the present invention. The programming system 12 of the memory can execute the programming method of the memory provided by any embodiment of the invention. The programming system 12 of the memory comprises:
a program module 121 for applying a program voltage to the memory cell at a program timing B1;
a verifying module 122, configured to apply a verifying voltage to the memory cell when verifying the timing Y1;
if the verification fails, after the program timing B1, the program module 121 re-applies at least two program voltages with increased amplitudes to the memory cells, and the verification module 122 performs the verification again, with the increased amplitudes D of the program voltagesvpgmAt least comprising a first amplification Dvpgm1And a second amplification Dvpgm2，Dvpgm1＞Dvpgm2The larger the programming times Q, the larger the amplification D of the programming voltageversThe smaller.
Programming of a memory by the present inventionThe system 12, after the verification fails, the program module 121 applies the program voltage to the memory cell again, the verification module 122 verifies again, the program voltage gradually increases with the increase of the program times, and the increment D of the program voltage every timevpgmInversely proportional to the magnitude of the programming voltage, the closer the programming voltage is to the programming threshold, the greater the magnitude of the programming voltage after each verify failurevpgmThe smaller the programming voltage, the larger the programming voltage amplitude, so that the tunneling oxide film 1114 of the memory cell 111 is not affected, the transient programming effect is reduced, and the life of the memory cell of the memory is prolonged.
It is understood that the contents of embodiment a and embodiment B of the present invention can be supplemented and described.
Compared with the prior art, the invention provides the programming method and the system of the memory, after the verification fails, at least two programming voltages with amplification are applied to the memory cell again to perform the verification again, the larger the programming times is along with the increase of the time sequence, the larger the programming voltage is, the amplification of the programming voltage is reduced, the closer the programming voltage is to the programming threshold, the smaller the amplitude of the programming voltage increase after the verification fails each time is, even if the amplitude of the programming voltage exceeds the programming threshold, the amplitude of the programming voltage does not exceed the programming threshold a lot, thereby not influencing a tunneling oxide film of the memory cell, reducing the transient programming effect, prolonging the service life of the memory cell of the memory, and ensuring the programming speed and improving the programming efficiency because the programming voltage is large at first.
It should be noted that, in all the above embodiments, the included units and modules are only divided according to functional logic, but are not limited to the above division as long as the corresponding functions can be implemented; in addition, specific names of the functional units are only for convenience of distinguishing from each other, and are not used for limiting the protection scope of the present invention.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims (10)

1. A method of programming a memory, comprising the steps of:
a program timing B1 is a timing for applying a program voltage to the memory cell;
applying a verify voltage to the memory cell at a verify timing Y1;
if the verification fails, at least two programming voltages with amplification are applied to the memory cell again after the programming timing B1 to perform verification again, wherein the amplification D of the programming voltagevpgmAt least comprising a first amplification Dvpgm1And a second amplification Dvpgm2，Dvpgm1＞Dvpgm2The larger the programming times Q, the larger the amplification D of the programming voltageversThe smaller.
2. The method of programming a memory of claim 1, wherein: the magnitude of the program voltage when the program voltage is applied to the memory cell at the program timing B1 is VpgmWhen the programming voltage is applied to the memory cell for the nth time, the amplitude of the programming voltage is Vpgm+(n-1)DvpgmWherein n is a positive integer and n is not less than 1, and D is increased according to stages along with the increase of the programming times nversAnd decreases.
3. The method of programming a memory of claim 2, wherein: amplification of the programming voltage DvpgmFurther comprising a third amplification Dvpgm3When the programming time Q is less than or equal to m1, the amplification of the programming voltage of each verification failure is a first amplification Dvpgm1When Q is more than m1 and less than or equal to m2, the amplification of the programming voltage of each verification failure is a second amplification Dvpgm2，Q＞m2, the amplification of the program voltage per verify failure is a third amplification Dvpgm3M1 is a first threshold of the number of programming times, and m2 is a second threshold of the number of programming times.
4. A method of programming a memory as claimed in claim 3, wherein: the m1 is 3, and the m2 is 4.
5. The method of programming a memory of claim 1, wherein: at the program timing B1, a program voltage is applied to the selected word line, a pass voltage is applied to the unselected word line, 0V is applied to the selected bit line, and a positive voltage is applied to the unselected bit line.
6. The method of programming a memory of claim 1, wherein: the range of the programming voltage is 12V to 16V.
7. The method of programming a memory of claim 1, wherein: at the verification timing Y1, a verification voltage is applied to the selected word line, the selected bit line is precharged to the precharge voltage, and a pass voltage is applied to the unselected word line; and then, discharging the selected bit line for the first time, comparing the voltage of the discharged bit line with a first judgment voltage, if the voltage of the discharged bit line is higher than the first judgment voltage, indicating that the verification is successful and the operation can be finished, and otherwise, indicating that the verification fails, storing data into the memory again and verifying.
8. The method of programming a memory of claim 1, wherein: the range of the verification voltage is 0V-1V.
9. The method of programming a memory of claim 7, wherein: the precharge voltage ranges from 1v to 1.2 v.
10. A programming system for a memory, the programming system comprising:
a program module for applying a program voltage to the memory cell at a program timing B1;
the verifying module is used for applying verifying voltage to the storage unit when verifying the time sequence Y1;
if the verification fails, after the program timing sequence B1, the program module re-applies at least two programming voltages with amplification to the memory cell, the verification module performs the verification again, and the amplification D of the programming voltagevpgmIncluding at least a first amplification D in time sequencevpgm1And a second amplification Dvpgm2，Dvpgm1＞Dvpgm2。
If the verification fails, after the program timing sequence B1, the program module re-applies at least two programming voltages with amplification to the memory cell, the verification module performs the verification again, and the amplification D of the programming voltagevpgmAt least comprising a first amplification Dvpgm1And a second amplification Dvpgm2，Dvpgm1＞Dvpgm2The larger the programming times Q, the larger the amplification D of the programming voltageversThe smaller.
CN201810940759.6A 2018-08-17 2018-08-17 Programming method and system of memory Pending CN110838320A (en)

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US20080094910A1 (en) * 2006-10-23 2008-04-24 Sim Sang-Pil Flash memory device and program method thereof
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