CN110829178B - Distributed Bragg reflector vertical cavity surface emitting semiconductor laser under annular structure - Google Patents
Distributed Bragg reflector vertical cavity surface emitting semiconductor laser under annular structure Download PDFInfo
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- CN110829178B CN110829178B CN201911084649.5A CN201911084649A CN110829178B CN 110829178 B CN110829178 B CN 110829178B CN 201911084649 A CN201911084649 A CN 201911084649A CN 110829178 B CN110829178 B CN 110829178B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
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- Semiconductor Lasers (AREA)
Abstract
A distributed Bragg reflector vertical cavity surface emitting semiconductor laser with an annular structure belongs to the technical field of semiconductor lasers. The light outlet in the prior art has process damage, is not easy to be well coupled with elements such as optical fibers, lenses and the like, and the heat dissipation effect of the device needs to be improved. The laser comprises an upper electrode, an ohmic contact layer, an upper distributed Bragg reflector, an oxide limiting layer, an active gain region, a lower distributed Bragg reflector, a substrate and a lower electrode from top to bottom in sequence; the upper electrode and the oxide limiting layer are in the shape of a ring with the same inner diameter, the width of the ring is 3-5 mu m, and the outer diameter of the ring is 115-125 mu m; the central parts of the lower distributed Bragg reflector, the substrate and the lower electrode are provided with a cylindrical hollow area, the height of the top surface of the cylindrical hollow area is lower than the inner mirror surface of the lower distributed Bragg reflector and higher than the outer mirror surface of the lower distributed Bragg reflector, the diameter of the cylindrical hollow area is 85-95 mu m, and high-thermal-conductivity solder is filled in the cylindrical hollow area.
Description
Technical Field
The invention relates to a distributed Bragg reflector vertical cavity surface emitting semiconductor laser under an annular structure, and belongs to the technical field of semiconductor lasers.
Background
The Hollow Laser Beam (HLB) is a ring beam with zero central intensity in the propagation direction, also called a hollow beam or a dark hollow beam (TakahiroKuga, YoshioTorii, Noritsugushiokawa, et. In other words, a hollow laser beam is a beam whose optical axis intensity is zero. The hollow beam has a series of novel and unique physical properties, such as a barrel-shaped intensity distribution, a small Dark Spot Size (DSS) and propagation invariance, and has spin and orbital angular momentum, among others. The hollow beam is used as a laser catheter, an optical tweezers (optical tweezers) and an optical wrench, and becomes a powerful tool for realizing the precise manipulation and control of microscopic particles (such as microparticles, nanoparticles, biological cells and the like). The hollow laser beam is applied to the fields of laser optics, binary optics, computer holography, optical trapping of micro particles, material science, biomedicine and the like.
In the field of semiconductor laser technology, there is a vertical cavity surface emitting semiconductor laser, which has a small size, a high efficiency, a low threshold, a simple and convenient electric pumping mode and an effect in optical fiber data transmission, compared to a solid laser, and people are eagerly to realize the intracavity hollow light emission of the vertical cavity surface emitting semiconductor laser. A chinese invention patent with patent number ZL201510113902.0 provides a technical solution entitled "a distributed bragg reflector vertical cavity surface emitting semiconductor laser on an annular structure", as shown in fig. 1, the distributed bragg reflector vertical cavity surface emitting semiconductor laser on an annular structure is, from top to bottom, an upper electrode 1, an ohmic contact layer 2, an upper distributed bragg reflector 3, an oxide confinement layer 4, an active gain region 5, a lower distributed bragg reflector 6, a substrate 7, and a lower electrode 8 in sequence; the upper electrode 1 and the oxide limiting layer 4 are in the shape of a ring with the same inner diameter, the width of the ring is 3-5 mu m, and the outer diameter of the ring is 115-125 mu m; the ohmic contact layer 2, the upper distributed Bragg reflector 3 and the active gain region 5 are laminated together to form a cylindrical region with a hollow part 10, and a high-resistance region 9 is arranged below the hollow part 10 of the cylindrical region; the outer diameter of the ring is the same as the outer diameter of the cylindrical area, and the inner diameter of the cylindrical area with the hollow part 10 is 85-95 mu m; the bottom surface of the high resistance region 9 is in contact with the lower distributed Bragg reflector 6, and the height of the top surface of the high resistance region 9 is higher than the inner mirror surface of the upper distributed Bragg reflector 3 and lower than the outer mirror surface of the upper distributed Bragg reflector 3. When the distributed Bragg reflector vertical cavity surface emitting semiconductor laser on the annular structure works, the current is injected from the upper electrode 1, enters the active gain region 5 through the ohmic contact layer 2, the upper distributed Bragg reflector 3 and the middle part of the oxide limiting layer 4, since the ohmic contact layer 2, the upper dbr 3, and the active gain region 5 are stacked to form a cylindrical region having a hollow portion 10, and, there is a high-resistance region 9 under the hollow part 10 of the cylindrical region, forming a "ring structured distributed bragg reflector" in the device, so that, the resonant cavity of the laser is in a ring column shape, and current can only generate stimulated emission in the ring column-shaped resonant cavity, so that emergent light becomes hollow laser beams, and as shown in figure 2, intracavity hollow light emission of the vertical-cavity surface-emitting semiconductor laser is realized.
However, in order to fabricate the distributed bragg reflector on the ring structure in the conventional vertical cavity surface emitting semiconductor laser, the hollow portion 10 needs to be formed by wet etching or dry etching, and the high resistance region 9 needs to be formed by hydrogen ion implantation, which not only increases the number of device fabrication process steps, but also increases the process difficulty, for example, the etching or etching depth is not easy to control, the uniformity of ion implantation is not easy to control, and is not beneficial to the batch production of devices. The following problems are at least the following: 1. the process damage problem, because the hollow part 10 is made on one side of the light outlet of the device, the adopted wet etching or dry etching process can damage the outer mirror surface of the upper distributed Bragg reflector 3 and the inner cylindrical surface of the ring-cylindrical resonant cavity of the laser, the irreversible cavity structure damage is easily caused, and the yield of the device is greatly reduced; meanwhile, as the roughness of the outer mirror surface of the upper distributed Bragg reflector 3 and the roughness of the inner cylindrical surface of the laser annular cylindrical resonant cavity are increased, the laser light can be reflected in multiple steps, more stray light is generated, and the conversion efficiency of the injected current is reduced; 2. the quality of the hollow laser beam is difficult to ensure because the high-resistance area 9 is formed by adopting a hydrogen ion implantation process, and the implantation uniformity is difficult to master, so that the central light intensity of the hollow laser beam is not absolutely zero, and the size of a dark spot is uncontrollable; 3. in the aspect of device packaging, because the hollow part 10 is positioned at one side of the light outlet of the device, no matter single-tube packaging or array packaging, mechanical damage is easily caused to the cavity of the resonant cavity, and the packaging process is difficult to improve, for example, in the process of gold wire bonding (manufacturing electrode lead wires), the unit volume of the upper distributed Bragg reflector 3 bears overlarge stress, and the mechanical damage to the cavity is easily caused; for another example, in the array mounting process, the contact area between the mounting head and the array is small, the pressure is large, and mechanical damage to the cavity of the resonant cavity is easily caused; 4. the hollow part 10 is located at one side of the light outlet of the device, so that the device is difficult to couple with optical elements such as optical fibers and lenses in later practical application, and the application range of the device is limited.
Furthermore, various semiconductor lasers have a common problem, that is, because substrate materials such as GaAs are poor heat conduction materials, and parts with heat dissipation effects such as plate-shaped heat sinks and heat sinks are in contact with the substrate to realize the heat dissipation of the die, the heat dissipation effect of the device needs to be improved.
Disclosure of Invention
In order to solve the technical problems in the prior art, the distributed bragg reflector vertical cavity surface emitting semiconductor laser with the annular structure is invented, on the premise that a laser device directly generates a hollow light beam, the technical problems caused by the process steps of forming a hollow part on one side of a light outlet of the device and forming a high-resistance area below the hollow part through ion implantation are avoided, and the heat dissipation effect of the device is improved.
The semiconductor laser with the annular structure and the lower distributed Bragg reflector vertical cavity surface emission sequentially comprises an upper electrode 1, an ohmic contact layer 2, an upper distributed Bragg reflector 3, an oxide limiting layer 4, an active gain region 5, a lower distributed Bragg reflector 6, a substrate 7 and a lower electrode 8 from top to bottom; the upper electrode 1 and the oxide limiting layer 4 are in the shape of a ring with the same inner diameter, the width of the ring is 3-5 μm, and the outer diameter of the ring is 115-125 μm; as shown in fig. 3, a cylindrical hollow region 11 exists in the central portion of the lower dbr 6, the substrate 7, and the lower electrode 8, the height of the top surface of the cylindrical hollow region 11 is lower than the inner mirror surface of the lower dbr 6 and higher than the outer mirror surface of the lower dbr 6, the diameter of the cylindrical hollow region 11 is 85 μm to 95 μm, and the cylindrical hollow region 11 is filled with a high thermal conductivity solder 12, as shown in fig. 4.
When the vertical cavity surface emitting semiconductor laser works, current is injected from an upper electrode 1, enters an active gain region 5 through the middle parts of an ohmic contact layer 2, an upper distributed Bragg reflector 3 and an oxide limiting layer 4, and a cylindrical hollow region 11 exists in the central parts of a lower distributed Bragg reflector 6, a substrate 7 and a lower electrode 8, and the top surface of the cylindrical hollow region 11 is lower than the inner mirror surface of the lower distributed Bragg reflector 6 and higher than the outer mirror surface of the lower distributed Bragg reflector 6, namely the outer mirror surface of the distributed Bragg reflector 6 is absent in the central part of a tube core of a device, so that the lower distributed Bragg reflector with an annular structure is formed, and effective resonance does not occur in the central part of the tube core of the device; meanwhile, the diameter of the cylindrical hollow area 11 is 85-95 μm and smaller than the annular inner diameter of 105-119 μm, so that an invisible annular cylindrical resonant cavity with an outer diameter of 105-119 μm and an inner diameter of 85-95 μm is formed in the device die, and injected current can only cause lasing in the invisible annular cylindrical resonant cavity, so that emergent light becomes a hollow laser beam, as shown in fig. 5, intracavity hollow light emission of the vertical cavity surface emitting semiconductor laser is realized. Under the premise, the technical effect of the invention is as follows. The vertical cavity surface emitting semiconductor laser of the present invention does not have a so-called high resistance region, so that the hydrogen ion implantation process step is eliminated, and the problem caused by the process step, namely the quality problem of the hollow laser beam, is naturally eliminated. Although a cylindrical hollow area needs to be formed in the middle of the device die by wet etching or dry etching after the semiconductor laser die is manufactured, the cylindrical hollow area 11 is not located on the light outlet side of the semiconductor laser but on the substrate side of the semiconductor laser die, and the problems of damage of the light outlet process, packaging of the device and use of the device do not exist. Because the cylindrical hollow region 11 is filled with the high-thermal-conductivity solder 12, the barrier of the substrate 7 to the diffusion of heat generated by the active gain region 5 is eliminated at least in the region, so that the heat dissipation effect of the device is improved, actually, the contribution of the substrate 7 and the lower distributed Bragg reflector 6 to the series resistance of the laser is avoided in the region, and the generation of heat is reduced, so that the heat dissipation effect of the device is further improved, and compared with the prior art, the heat dissipation capacity of the device can be enhanced by 20%; moreover, the filling of the high thermal conductivity solder 12 can be completed when the device tube core is welded on the device radiating fin or the heat sink, the process steps are not increased, the thickness of the radiating fin is micron-scale, the material of the radiating fin is aluminum nitride or silicon carbide, and the high thermal conductivity solder has the characteristic of high thermal conductivity; the heat sink is made of copper and has good heat conduction performance.
Drawings
Fig. 1 is a schematic front view of a conventional dbr-vcsel structure and an optical output state in a ring structure.
Fig. 2 is a schematic top view of the light emitting state of a conventional dbr-vcsel laser in an annular structure.
FIG. 3 is a schematic cross-sectional front view of a distributed Bragg reflector VCSEL structure with an annular structure and an emergent light state according to the present invention; in this figure, the cylindrical hollow region has not been filled with high thermal conductivity solder.
FIG. 4 is a schematic cross-sectional front view of a distributed Bragg reflector VCSEL structure with an annular structure and an emergent light state according to the present invention; in this figure, the cylindrical hollow area is filled with high thermal conductivity solder; the figure is taken as an abstract figure at the same time.
FIG. 5 is a schematic top view of the light-emitting state of a DBR VCSEL with ring structure according to the present invention.
Detailed Description
The semiconductor laser with the annular structure and the lower distributed Bragg reflector vertical cavity surface emission sequentially comprises an upper electrode 1, an ohmic contact layer 2, an upper distributed Bragg reflector 3, an oxide limiting layer 4, an active gain region 5, a lower distributed Bragg reflector 6, a substrate 7 and a lower electrode 8 from top to bottom; the upper electrode 1 is made of Ti/Pt/Au. The material of the ohmic contact layer 2 is GaAs. The upper distributed Bragg reflector 3 is made of P-type Al0.1Ga0.9As/Al0.8Ga0.2As. The material of the oxide limiting layer 4 is Al2O3. The active gain region 5 material is GaAs/AlGaAs. The lower distributed Bragg reflector 6 is made of N-type Al0.1Ga0.9As/Al0.8Ga0.2As. The substrate 7 material is GaAs. The lower electrode 8 is made of Au/Ge/Ni; the upper electrode 1 and the oxide confinement layer 4 are in the shape of a ring with the same inner diameter, the width of the ring is 3-5 μm, and the outer diameter of the ring is 115-125 μm. As shown in fig. 3, a cylindrical hollow region 11 exists in the central portion of the lower dbr 6, the substrate 7, and the lower electrode 8, the height of the top surface of the cylindrical hollow region 11 is lower than the inner mirror surface of the lower dbr 6 and higher than the outer mirror surface of the lower dbr 6, the diameter of the cylindrical hollow region 11 is 85 to 95 μm, and the height of the cylindrical hollow region 11 is 140 to 150 μm. The cylindrical hollow region 11 is filled with high thermal conductivity solder 12, as shown in fig. 4; the high thermal conductivity solder 12 is a gold-tin alloy or organo-indium compound, the latter being much less expensive than gold-tin alloy solder.
Claims (3)
1. A semiconductor laser with a ring-shaped structure and a lower distributed Bragg reflector vertical cavity surface emission is sequentially provided with an upper electrode (1), an ohmic contact layer (2), an upper distributed Bragg reflector (3), an oxide limiting layer (4), an active gain region (5), a lower distributed Bragg reflector (6), a substrate (7) and a lower electrode (8) from top to bottom; the upper electrode (1) and the oxide limiting layer (4) are in the shape of a ring with the same inner diameter, the width of the ring is 3-5 mu m, and the outer diameter of the ring is 115-125 mu m; the distributed Bragg reflector is characterized in that a cylindrical hollow area (11) is arranged at the central parts of the lower distributed Bragg reflector (6), the substrate (7) and the lower electrode (8), the height of the top surface of the cylindrical hollow area (11) is lower than the inner mirror surface of the lower distributed Bragg reflector (6) and higher than the outer mirror surface of the lower distributed Bragg reflector (6), the diameter of the cylindrical hollow area (11) is 85-95 mu m, and high-thermal-conductivity solder (12) is filled in the cylindrical hollow area (11).
2. The VCSEL of claim 1, wherein the height of the cylindrical hollow region (11) is 140 to 150 μm.
3. The ring structured lower distributed bragg reflector vcsel laser according to claim 1, wherein the high thermal conductivity solder (12) is a gold-tin alloy or an organo-indium compound.
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| CN113594846A (en) * | 2021-07-28 | 2021-11-02 | 中国科学院半导体研究所 | Semiconductor laser and preparation method thereof |
| US20240162683A1 (en) | 2022-11-10 | 2024-05-16 | Brightlaser Limited | Multi-junction bottom emitting vertical cavity surface emitting laser and the fabrication method of the same |
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| US8295318B2 (en) * | 2010-06-29 | 2012-10-23 | Fuji Xerox Co., Ltd. | Vertical cavity surface emitting laser, vertical-cavity-surface-emitting-laser device, optical transmission apparatus, and information processing apparatus |
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| CN104767120A (en) * | 2015-03-16 | 2015-07-08 | 长春理工大学 | Vertical-cavity surface-emitting semiconductor laser of distributed Bragg reflectors on annular structures |
| CN108923261A (en) * | 2018-10-24 | 2018-11-30 | 常州纵慧芯光半导体科技有限公司 | Dot structure of vertical cavity surface emitting laser and preparation method thereof |
| CN109149361A (en) * | 2018-10-10 | 2019-01-04 | 南京工程学院 | A kind of vertical-cavity surface-emitting silicon substrate GaN laser and preparation method thereof based on dielectric Bragg mirror |
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- 2019-11-08 CN CN201911084649.5A patent/CN110829178B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US8295318B2 (en) * | 2010-06-29 | 2012-10-23 | Fuji Xerox Co., Ltd. | Vertical cavity surface emitting laser, vertical-cavity-surface-emitting-laser device, optical transmission apparatus, and information processing apparatus |
| CN102694341A (en) * | 2011-03-25 | 2012-09-26 | 长春理工大学 | Etching heat dissipation enhanced type vertical-cavity surface-emitting laser |
| CN104300363A (en) * | 2014-10-10 | 2015-01-21 | 中国科学院长春光学精密机械与物理研究所 | External-cavity vertical cavity surface emitting semiconductor laser and manufacturing method thereof |
| CN104767120A (en) * | 2015-03-16 | 2015-07-08 | 长春理工大学 | Vertical-cavity surface-emitting semiconductor laser of distributed Bragg reflectors on annular structures |
| CN109149361A (en) * | 2018-10-10 | 2019-01-04 | 南京工程学院 | A kind of vertical-cavity surface-emitting silicon substrate GaN laser and preparation method thereof based on dielectric Bragg mirror |
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