CN110828629B - Flip LED chip and manufacturing method thereof - Google Patents
Flip LED chip and manufacturing method thereof Download PDFInfo
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- CN110828629B CN110828629B CN201911003236.XA CN201911003236A CN110828629B CN 110828629 B CN110828629 B CN 110828629B CN 201911003236 A CN201911003236 A CN 201911003236A CN 110828629 B CN110828629 B CN 110828629B
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- 238000004519 manufacturing process Methods 0.000 title abstract description 11
- 238000002161 passivation Methods 0.000 claims abstract description 85
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 238000003466 welding Methods 0.000 claims abstract description 23
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims abstract description 13
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 12
- 230000000903 blocking effect Effects 0.000 claims abstract description 11
- 230000000694 effects Effects 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 18
- 230000004888 barrier function Effects 0.000 claims description 13
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
- 239000010980 sapphire Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000001312 dry etching Methods 0.000 claims description 9
- 238000007788 roughening Methods 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- 230000002378 acidificating effect Effects 0.000 claims description 3
- 238000000149 argon plasma sintering Methods 0.000 claims description 3
- 230000031700 light absorption Effects 0.000 abstract description 4
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a flip LED chip and a manufacturing method thereof, wherein the chip comprises an epitaxial layer, a transparent conductive layer, a reflecting layer, a blocking layer, a first passivation layer, a passivation supporting layer, a connecting electrode and a welding electrode, wherein the passivation supporting layer is combined on the connecting electrode and the first passivation layer, and the welding electrode is combined on the passivation supporting layer and is connected with the connecting electrode in a conductive manner; the passivation supporting layer is made of SiO 2 、Al 2 O 3 And SiN x The passivation supporting layer is used for supporting the chip and has an insulating effect; and the light emitted by the epitaxial layer is reflected by the reflecting layer and then directly emitted from the back surface of the epitaxial layer. According to the flip LED chip, the light absorption influence of a large amount of bulk materials such as a substrate, an AlN layer and a buffer layer is reduced, light is directly emitted from the back surface of an epitaxial layer, and the light emitting efficiency can be improved by more than 3%.
Description
Technical Field
The invention relates to the technical field of light emitting diodes, in particular to a flip LED chip and a manufacturing method thereof.
Background
The flip LED chip is a novel LED in recent years, has the main function of no packaging process, greatly saves production efficiency, can be applied to high current, and can realize an ultra-miniature mini type LED.
Referring to fig. 1, a conventional flip-chip LED chip includes an AlN layer 11, a buffer layer 12, an epitaxial layer 20, a transparent conductive layer 30, a reflective layer 40, a barrier layer 50, a passivation layer 60, a first electrode 71, and a second electrode 72 sequentially disposed on a substrate 10, where the light-emitting surface of the conventional flip-chip LED chip is a substrate side, the conventional substrate is typically a sapphire substrate, and the epitaxial layer is made of a gallium nitride material.
In addition, the existing LED backlight display is formed by splicing a plurality of flip LED chips, and because the light emergent surface of the flip LED chips is concentrated on one side of the substrate and emergent, the LED chips are required to be flipped, if the backlight display needs to emit light uniformly, the distance between the adjacent LED chips is small enough, so that a large number of flip LED chips are required for assembly, and the cost is high.
Disclosure of Invention
The invention aims to solve the technical problem of providing a flip LED chip and a manufacturing method thereof, and the light emitting efficiency of the chip is high.
In order to solve the above technical problems, the present invention provides a flip LED chip, comprising: the semiconductor device comprises an epitaxial layer, a transparent conductive layer, a reflecting layer, a blocking layer, a first passivation layer, a passivation supporting layer, a connecting electrode and a welding electrode, wherein the transparent conductive layer is combined on the front surface of the epitaxial layer, the reflecting layer is combined on the transparent conductive layer, the blocking layer is combined on the reflecting layer, the first passivation layer is combined on the blocking layer, the connecting electrode is combined on the first passivation layer and is in conductive connection with the epitaxial layer, the passivation supporting layer is combined on the connecting electrode and the first passivation layer, and the welding electrode is combined on the passivation supporting layer and is in conductive connection with the connecting electrode;
the passivation supporting layer is made of SiO 2 、Al 2 O 3 And SiN x One or more of the passivation support layers are made of a material with the thickness of 120-170 mu m, and the passivation support layer is used for supporting the chip and has an insulating effect;
and the light emitted by the epitaxial layer is reflected by the reflecting layer and then directly emitted from the back surface of the epitaxial layer.
As an improvement of the above-described aspect, the epitaxial layer includes a first semiconductor layer, an active layer, and a second semiconductor layer, the transparent conductive layer is disposed between the second semiconductor layer and the reflective layer, and light emitted from the active layer exits from the back surface of the first semiconductor layer;
and the back surface of the first semiconductor layer is provided with a roughening structure, wherein the roughening depth is 0.8-1.2 mu m.
As an improvement of the above-mentioned scheme, the connection electrode includes a first connection electrode and a second connection electrode, wherein the first connection electrode penetrates through the first passivation layer, the barrier layer, the metal reflection layer and the transparent conductive layer and is connected with the first semiconductor layer; the second connecting electrode penetrates through the first passivation layer and the blocking layer and is connected with the metal reflecting layer.
As an improvement of the above, the first passivation layer is made of SiO 2 、Al 2 O 3 And SiN x One or more of the materials is/are made with the thickness of 6000-10000 angstrom.
As an improvement of the scheme, the reflecting layer is made of Ag or Al, and the thickness of the reflecting layer is 1000-3000 angstroms;
the reflecting layer is provided with a patterned structure for adjusting the light emitting angle and the light emitting shape of the chip.
Correspondingly, the invention also provides a manufacturing method of the flip LED chip, which comprises the following steps:
sequentially forming an AlN layer, a buffer layer, an epitaxial layer, a reflecting layer, a blocking layer, a first passivation layer and a connecting electrode on a sapphire substrate, wherein the connecting electrode is in conductive connection with the epitaxial layer;
forming a passivation support layer on the connection electrode and the first passivation layer, the passivation support layer comprising SiO 2 、Al 2 O 3 And SiN x One or more of the passivation support layers are made of a material with the thickness of 120-170 mu m, and the passivation support layer is used for supporting the chip and has an insulating effect;
forming a welding electrode on the passivation supporting layer, wherein the welding electrode is in conductive connection with the connecting electrode;
removing the sapphire substrate, the AlN layer and the buffer layer, and exposing the epitaxial layer;
light emitted by the chip exits from one side of the exposed epitaxial layer.
As an improvement of the above scheme, the method further comprises the following steps:
coarsening the exposed epitaxial layer to form a coarsening structure, wherein the coarsening depth is 0.8-1.2 mu m.
As an improvement of the above-described scheme, a sapphire substrate is removed by a lift-off method including laser sintering, dry etching, and grinding;
removing the AlN layer and the buffer layer by adopting a dry etching method;
and coarsening the epitaxial layer by adopting a dry etching method, an alkaline wet etching method or an acidic wet etching method.
As an improvement of the scheme, the reflecting layer is made of Ag or Al, and the thickness of the reflecting layer is 1000-3000 angstroms.
As an improvement of the above, the first passivation layer is made of SiO 2 、Al 2 O 3 And SiN x One or more of the materials is/are made with the thickness of 6000-10000 angstrom.
The implementation of the invention has the following beneficial effects:
the passivation supporting layer of the invention is made of SiO 2 、Al 2 O 3 And SiN x The passivation supporting layer is used for supporting the chip and has an insulating effect, wherein light emitted by the epitaxial layer is reflected by the reflecting layer and then directly emitted from the back surface of the epitaxial layer.
Compared with the traditional flip LED chip, the flip LED chip reduces the light absorption influence of a large amount of bulk materials such as a substrate, an AlN layer, a buffer layer and the like, light rays are directly emitted from the back surface of an epitaxial layer, and the light emitting efficiency can be improved by more than 3%.
After the substrate is removed, the thickness of the passivation supporting layer is 120-170 mu m, so that the passivation supporting layer can be used as a supporting substrate of a chip, a new substrate does not need to be bonded again, a grinding and thinning process is not needed, the production efficiency is effectively improved, and the cost is saved. In addition, the passivation supporting layer can also play an insulating role, so that the chip leakage is effectively prevented.
According to the chip, the light emitting surface is the back surface of the first semiconductor layer, so that the light emitting efficiency can be improved, and the light emitting angle of the chip can be changed by coarsening the back surface of the first semiconductor layer, so that different application requirements of the chip can be met.
Drawings
Fig. 1 is a schematic diagram of a conventional flip-chip LED chip;
FIG. 2 is a schematic diagram of a flip LED chip of the present invention;
FIG. 3a is a schematic illustration of the present invention after forming a first bonding layer on a sapphire substrate;
FIG. 3b is a schematic illustration of the formation of a second bonding layer on a transfer substrate in accordance with the present invention;
FIG. 3c is a schematic illustration of a transfer substrate of the present invention bonded to a transparent conductive layer;
fig. 3d is a schematic view of the present invention after removing the sapphire substrate, alN layer and buffer layer.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings, for the purpose of making the objects, technical solutions and advantages of the present invention more apparent.
Referring to fig. 2, the flip-chip LED chip provided by the present invention includes an epitaxial layer 20, a transparent conductive layer 30, a reflective layer 40, a barrier layer 50, a first passivation layer 60, a passivation support layer 70, a connection electrode and a bonding electrode, wherein the transparent conductive layer 30 is bonded on the front surface of the epitaxial layer 20, the reflective layer 40 is bonded on the transparent conductive layer 30, the barrier layer 50 is bonded on the reflective layer 40, the first passivation layer 60 is bonded on the barrier layer 50, the connection electrode is bonded on the first passivation layer 60 and is electrically connected with the epitaxial layer 20, the passivation support layer 70 is bonded on the connection electrode and the first passivation layer 60, and the bonding electrode is bonded on the passivation support layer 70 and is electrically connected with the connection electrode.
The passivation supporting layer 70 of the present invention is made of SiO 2 、Al 2 O 3 And SiN x The passivation supporting layer 70 is used for supporting the chip and has an insulating function, wherein light emitted by the epitaxial layer 20 is reflected by the reflecting layer and then directly emitted from the back surface of the epitaxial layer 20.
Compared with the traditional flip LED chip, the flip LED chip reduces the light absorption influence of a large amount of bulk materials such as a substrate, an AlN layer, a buffer layer and the like, light rays are directly emitted from the back surface of the epitaxial layer 20, and the light emitting efficiency can be improved by more than 3%.
After the substrate is removed, the passivation supporting layer 70 has the thickness of 120-170 mu m, so that the passivation supporting layer can be used as a supporting substrate of a chip, a new substrate does not need to be bonded again, a grinding and thinning process is not needed, the production efficiency is effectively improved, and the cost is saved. In addition, the passivation supporting layer 70 can also play an insulating role, so that chip leakage is effectively prevented.
Specifically, the epitaxial layer 20 of the present invention includes a first semiconductor layer 21, an active layer 22 and a second semiconductor layer 23, the transparent conductive layer 30 is disposed between the second semiconductor layer 23 and the reflective layer, and the light emitted from the chip exits from the first semiconductor layer 21 side.
In order to further improve the light emitting efficiency of the chip, the back surface of the first semiconductor layer 21 is provided with a roughening structure, wherein the roughening depth is 0.8-1.2 μm. If the etching depth is too deep, the photoelectric performance of the chip is affected; if the etching depth is too shallow, the roughening effect is not obvious.
According to the chip, the light emergent surface is the back surface of the first semiconductor layer 21, so that the light emergent efficiency can be improved, and the light emergent angle of the chip can be changed by coarsening the back surface of the first semiconductor layer 21, so that different application requirements of the chip can be met.
In order to improve the reflection efficiency, the reflection layer 40 is made of Ag or Al, and has a thickness of 1000 to 3000 angstroms. The barrier layer serves to protect the metal diffusion of the reflective layer 40.
Further, the reflective layer 40 of the present invention has a patterned structure, which can effectively and controllably adjust the light-emitting angle and light-emitting shape of the flip chip, and can significantly reduce the usage amount of the LED chip in backlight application, increase the uniformity of backlight, and reduce the thickness of the liquid crystal display device.
The connection electrode includes a first connection electrode 81 and a second connection electrode 82, wherein the first connection electrode 81 penetrates the first passivation layer 60, the barrier layer, the metal reflective layer 40, and the transparent conductive layer 30, and is connected to the first semiconductor layer 21; the second connection electrode 82 penetrates the first passivation layer 60 and the barrier layer 50, and is connected to the metal reflective layer 40.
The welding electrodes include a first welding electrode 91 and a second welding electrode 92, wherein the first welding electrode 91 is combined with the first connection electrode 81, and the second welding electrode 92 is combined with the second connection electrode 82.
The first passivation layer 60 of the present invention is used to isolate the first connection electrode 81 and the second connection electrode 82, and preferably, the first passivation layer 60 is made of SiO 2 、Al 2 O 3 Or SiNx with the thickness of 6000-10000 angstrom.
Correspondingly, the invention also provides a manufacturing method of the flip LED chip, which comprises the following steps:
referring to fig. 3a, an AlN layer 11, a buffer layer 12, an epitaxial layer 20, a reflective layer 40, a barrier layer, a first passivation layer 60, and a connection electrode, which is conductively connected to the epitaxial layer 20, are sequentially formed on a sapphire substrate 10.
Specifically, the epitaxial layer 20 of the present invention includes a first semiconductor layer 21, an active layer 22 and a second semiconductor layer 23, the transparent conductive layer 30 is disposed between the second semiconductor layer 23 and the reflective layer 40, and the light emitted from the chip exits from the first semiconductor layer 21 side.
The connection electrode includes a first connection electrode 81 and a second connection electrode 82, wherein the first connection electrode 81 penetrates the first passivation layer 60, the barrier layer, the metal reflective layer 40, and the transparent conductive layer 30, and is connected to the first semiconductor layer 21; the second connection electrode 82 penetrates the first passivation layer 60 and the barrier layer, and is connected to the metal reflective layer 40.
In order to improve the reflection efficiency, the reflection layer 40 is made of Ag or Al, and has a thickness of 1000 to 3000 angstroms. The barrier layer serves to protect the metal diffusion of the reflective layer 40.
Further, the reflective layer 40 of the present invention has a patterned structure, which can effectively and controllably adjust the light-emitting angle and light-emitting shape of the flip chip, and can significantly reduce the usage amount of the LED chip in backlight application, increase the uniformity of backlight, and reduce the thickness of the liquid crystal display device.
The first passivation layer 60 of the present invention is used to isolate the first connection electrode 81 and the second connection electrode 82, and preferably, the first passivation layer 60 is made of SiO 2 、Al 2 O 3 Or SiNx with the thickness of 6000-10000 angstrom.
See the figure3b forming a passivation supporting layer 70 on the connection electrode and the first passivation layer 60, the passivation supporting layer 70 being made of SiO 2 、Al 2 O 3 And SiN x The passivation supporting layer 70 is made of one or more of the materials with the thickness of 120-170 mu m, and is used for supporting a chip and playing an insulating role.
Referring to fig. 3c, a welding electrode, which is conductively connected to the connection electrode, is formed on the passivation support layer 70.
Specifically, the passivation supporting layer 70 is etched to expose the connection electrode, and then a welding electrode is formed on the passivation supporting layer 70.
The welding electrode includes a first welding electrode 91 and a second welding electrode 92, wherein the first welding electrode 91 is combined with the first connection electrode 81, and the second welding electrode 92 is combined with the second connection electrode 82.
The passivation supporting layer 70 of the present invention serves to insulate the first and second welding electrodes 91 and 92.
Referring to fig. 3d, the sapphire substrate 10, the AlN layer 11 and the buffer layer 12 are removed, exposing the first semiconductor layer 21. Specifically, a sapphire substrate is removed by adopting a stripping method, wherein the stripping method comprises laser sintering, dry etching and grinding; removing the AlN layer and the buffer layer by adopting a dry etching method;
compared with the traditional flip LED chip, the flip LED chip reduces the light absorption influence of a large amount of materials such as a substrate, an AlN layer, a buffer layer and the like, light rays are directly emitted from the back surface of the first semiconductor layer 21, and the light emitting efficiency can be improved by more than 3%.
After the substrate is removed, the passivation supporting layer 70 has the thickness of 120-170 mu m, so that the passivation supporting layer can be used as a supporting substrate of a chip, a new substrate does not need to be bonded again, a grinding and thinning process is not needed, the production efficiency is effectively improved, and the cost is saved. In addition, the passivation supporting layer 70 can also play an insulating role, so that chip leakage is effectively prevented.
Referring to fig. 2, in order to further improve the light emitting efficiency of the chip, the present invention adopts dry etching, alkaline wet etching or acidic wet etching to coarsen the exposed first semiconductor layer 21 to form a coarsened structure, so that not only the light emitting efficiency can be improved, but also the light emitting angle of the chip can be changed to meet different application requirements of the chip.
Preferably, the roughening depth of the first semiconductor layer 21 is 0.8 to 1.2 μm.
The above disclosure is only a preferred embodiment of the present invention, and it is needless to say that the scope of the invention is not limited thereto, and therefore, the equivalent changes according to the claims of the present invention still fall within the scope of the present invention.
Claims (8)
1. A flip-chip LED chip, comprising: the semiconductor device comprises an epitaxial layer, a transparent conductive layer, a reflecting layer, a blocking layer, a first passivation layer, a passivation supporting layer, a connecting electrode and a welding electrode, wherein the transparent conductive layer is combined on the front surface of the epitaxial layer, the reflecting layer is combined on the transparent conductive layer, the blocking layer is combined on the reflecting layer, the first passivation layer is combined on the blocking layer, the connecting electrode is combined on the first passivation layer and is in conductive connection with the epitaxial layer, the passivation supporting layer is combined on the connecting electrode and the first passivation layer, and the welding electrode is combined on the passivation supporting layer and is in conductive connection with the connecting electrode;
the passivation supporting layer is made of SiO 2 、Al 2 O 3 And SiN x One or more of the passivation support layers are made of a material with the thickness of 120-170 mu m, and the passivation support layer is used for supporting the chip and has an insulating effect;
the light emitted by the epitaxial layer is reflected by the reflecting layer and then directly emitted from the back surface of the epitaxial layer;
the flip LED chip is manufactured by the following method:
sequentially forming an AlN layer, a buffer layer, an epitaxial layer, a reflecting layer, a blocking layer, a first passivation layer and a connecting electrode on a sapphire substrate, wherein the connecting electrode is in conductive connection with the epitaxial layer;
forming a passivation support layer on the connection electrode and the first passivation layer, the passivation support layer comprising SiO 2 、Al 2 O 3 And SiN x One of (a)The passivation supporting layer is used for supporting the chip and has an insulating effect;
forming a welding electrode on the passivation supporting layer, wherein the welding electrode is in conductive connection with the connecting electrode;
removing the sapphire substrate, the AlN layer and the buffer layer, and exposing the epitaxial layer;
light emitted by the chip exits from one side of the exposed epitaxial layer.
2. The flip-chip LED chip of claim 1, wherein the epitaxial layer comprises a first semiconductor layer, an active layer, and a second semiconductor layer, the transparent conductive layer being disposed between the second semiconductor layer and the reflective layer, light exiting from the active layer exiting from the back side of the first semiconductor layer;
and the back surface of the first semiconductor layer is provided with a roughening structure, wherein the roughening depth is 0.8-1.2 mu m.
3. The flip-chip LED chip of claim 2, wherein the connection electrode comprises a first connection electrode and a second connection electrode, wherein the first connection electrode penetrates the first passivation layer, the barrier layer, the metal reflective layer, and the transparent conductive layer and is connected to the first semiconductor layer; the second connecting electrode penetrates through the first passivation layer and the blocking layer and is connected with the metal reflecting layer.
4. The flip-chip LED chip of claim 3, wherein the first passivation layer is comprised of SiO 2 、Al 2 O 3 And SiN x One or more of the materials is/are made with the thickness of 6000-10000 angstrom.
5. The flip-chip LED chip of claim 1, wherein the reflective layer is made of Ag or Al and has a thickness of 1000 to 3000 angstroms;
the reflecting layer is provided with a patterned structure for adjusting the light emitting angle and the light emitting shape of the chip.
6. The flip-chip LED chip of claim 1, further comprising the steps of:
coarsening the exposed epitaxial layer to form a coarsening structure, wherein the coarsening depth is 0.8-1.2 mu m.
7. The flip-chip LED chip of claim 1, wherein the sapphire substrate is removed by lift-off methods including laser sintering, dry etching and grinding;
removing the AlN layer and the buffer layer by adopting a dry etching method;
and coarsening the epitaxial layer by adopting a dry etching method, an alkaline wet etching method or an acidic wet etching method.
8. The flip-chip LED chip of claim 1, wherein the reflective layer is made of Ag or Al and has a thickness of 1000 to 3000 angstroms.
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| CN201911003236.XA CN110828629B (en) | 2019-10-22 | 2019-10-22 | Flip LED chip and manufacturing method thereof |
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| CN109524514A (en) * | 2018-11-23 | 2019-03-26 | 江苏新广联半导体有限公司 | A kind of flip LED chips and preparation method thereof with Ag reflection layer structure |
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