CN110828560A - Base region ring-doped anti-radiation transverse PNP transistor and preparation method thereof - Google Patents
Base region ring-doped anti-radiation transverse PNP transistor and preparation method thereof Download PDFInfo
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
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- H01L29/1004—Base region of bipolar transistors
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- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/6625—Lateral transistors
Abstract
The invention discloses a base region ring-doped anti-radiation transverse PNP transistor and a preparation method thereof, wherein after a transverse PNP transistor structure is formed conventionally, N-type impurity injection is carried out on the surface of an N-type base region of the transverse PNP transistor once by a photoresist masking injection method, an annular N + doped region is formed on the surface of the N-type base region, and the base region width W of the transverse PNP transistor is adjustedbThe position is pushed to the inside of the N-type epitaxial layer from the surface of the N-type epitaxial layer. When the lateral PNP transistor of the base-ring structure is in the total dose irradiation environment, although the accumulation of positive charges in the oxide layer can cause the depletion and inversion of the P-type collector region and the depletion and inversion of the surface of the P-type emitter region, the base region width W is used for the depletion and inversion of the P-type collector regionbPosition ofThe lateral PNP transistor with the base-ring structure has stronger total dose radiation resistance because the lateral PNP transistor is moved downwards to the depletion and inversion of the P-type collector region and the depletion and inversion of the surface of the P-type emitter region, so the base-ring structure has no influence on the base width of the lateral PNP transistor.
Description
Technical Field
The invention belongs to the technical field of PNP transistors, and particularly relates to a base region ring-doped anti-radiation transverse PNP transistor and a preparation method thereof.
Background
A transverse PNP transistor is a transistor structure frequently used in a bipolar integrated circuit, in the production of the traditional bipolar integrated circuit, a diffusion process or an ion implantation process is adopted to dope P-type impurities of a collector region and an emitter region of the transverse PNP transistor, namely, selective P-type impurity doping is carried out on an N-type epitaxial layer to form the P-type collector region and the P-type emitter region of the transverse PNP transistor, the epitaxial layer is used as an N-type base region of the transverse PNP transistor, the transverse PNP transistor structure is finally realized through a lead, a silicon dioxide layer covers the surface of the transistor and is used as an insulating layer between a metal lead and a transistor doping region, and therefore short circuit between different doping regions of the transistor through a metal connecting wire is avoided.
The lateral PNP transistor has poor total dose radiation resistance: the total dose radiation can cause positive charges to be induced and accumulated in a silicon dioxide layer covered on the surface of the transistor, so that negative charges are induced on the surface of the transistor, the surface depletion/inversion of a P-type collector region/emitter region of the transverse PNP transistor is caused, holes injected into a base region are pushed to a substrate, the hole diffusion distance is increased, and the base region width W of the PNP transistor is increasedBIncrease, transport coefficient αTAnd goes down, β goes down.
Disclosure of Invention
The invention provides a novel transverse PNP transistor capable of improving total dose radiation resistance through base region ring doping and a preparation method thereof aiming at the influence mechanism of total dose radiation on the transverse PNP transistor.
In order to achieve the purpose, the base-ring-doped anti-radiation transverse PNP transistor comprises an N-type epitaxial layer, wherein a P-type collector region and a P-type emitter region are concentrically arranged at the upper part of the N-type epitaxial layer, the depths of the P-type collector region and the P-type emitter region are the same, an N-type base ring is arranged between the P-type collector region and the P-type emitter region, and impurities doped in the N-type base ring are phosphorus.
Furthermore, the junction depth of the N-type base region ring is 10% -30% of that of the P-type collector region.
Further, the width of the N-type base ring is 30% -80% of the width of the base region of the transverse PNP transistor.
Further, the distance d1 between the N-type base region ring and the P-type collector region is equal to the distance d2 between the N-type base region ring and the P-type emitter region.
Furthermore, a silicon dioxide insulating layer is arranged on the upper end face of the N-type epitaxial layer.
Furthermore, the N-type base region ring is a fan ring with a central angle of 30-360 degrees.
A preparation method of the base region ring doped anti-radiation transverse PNP transistor comprises the following steps:
step 2, coating photoresist on the surface of the silicon dioxide insulating layer, and forming an N-type base region ring window through exposure and development;
Step 4, removing the photoresist coated in the step 2;
and 5, thermally annealing to form the base region ring transverse PNP transistor structure.
Compared with the prior art, the invention has at least the following beneficial technical effects:
novel bipolar transistor structure for improving total dose radiation resistance of transistor by doping base region ring aiming at influence mechanism of total dose radiation on transverse PNP transistor. An N-type base region ring is added between the emitter region and the collector region to increase the base region width W of the lateral PNP transistorbThe position of the base region is pushed into the N-type epitaxial layer body from the surface of the N-type epitaxial layer, and under the condition of total dose radiation of the transistor, although positive charge accumulation in the oxide layer can cause depletion and inversion of a P-type collector region and depletion and inversion of the surface of a P-type emitter region, the base region width WbIs not in the same plane as depletion or inversion, so the base region width WbDoes not change, thereby suppressing the transport coefficient αTThe drop in β due to radiation is reduced and the total dose radiation resistance of the lateral PNP transistor is improved.
Furthermore, the junction depth of the N-type base region ring is 10% -30% of that of the P-type collector region, on the premise that the base region ring effect is achieved, the influence of base region ring doping on the impurity concentration of the base region of the transverse PNP transistor is reduced, and the influence of the base region ring on the performance of the transverse PNP transistor is reduced.
Furthermore, the width of the N-type base ring is 30% -80% of the width of the base region of the transverse PNP transistor, and under the condition that the requirements of the N-type base ring and the distances between the collector region and the emitter region of the transverse PNP transistor are met, the base ring is wider as much as possible, so that the effect of the base ring is ensured.
Further, the distance d1 between the N-type base region ring and the P-type collector region is equal to the distance d2 between the N-type base region ring and the P-type emitter region, so that the change of breakdown voltage of base region-emitter region junctions and base region-collector region PN junctions of the transverse PNP transistor caused by base region ring doping is avoided on the premise that the width of the N-type base region ring is ensured.
Furthermore, the upper end surface of the N-type epitaxial layer is covered with a silicon dioxide insulating layer so as to avoid short circuit between different doped regions of the transistor through a metal connecting wire.
The transistor of the above structure is formed by selective ion implantation: after impurity selective doping of different regions is completed through a traditional bipolar process to form a transverse PNP transistor structure, N-type impurity injection is performed on the surface of an N-type base region of the transverse PNP transistor once through a photoresist masking injection method to form an annular N + doping region on the surface of the N-type base region, and the base region width W of the transverse PNP transistor is adjustedbThe position is pushed to the inside of the N-type epitaxial layer from the surface of the N-type epitaxial layer. When the lateral PNP transistor of the base-ring structure is in the total dose irradiation environment, although the accumulation of positive charges in the oxide layer can cause the depletion and inversion of the P-type collector region and the depletion or inversion of the surface of the P-type emitter region, the base region width W is used for the depletion or inversion of the surface of the P-type collector regionbThe position is moved downwards to the position below the depletion and inversion regions on the surface of the P-type collector region and the surface of the P-type emitter region, so that the base width of the lateral PNP transistor is not influenced, and the lateral PNP transistor with the base ring structure has stronger total dose radiation resistance.
Drawings
FIG. 1 a: a top view of a lateral PNP transistor of conventional structure;
FIG. 1 b: a top view of a lateral PNP transistor of conventional structure;
FIG. 2: a vertical cross-sectional view of a lateral PNP transistor of a conventional structure;
FIG. 3: longitudinal section after total dose radiation of transverse PNP transistor with traditional structure
FIG. 4 a: a first top view of a lateral PNP transistor of the base region ring structure;
FIG. 4 b: a second top view of the base region ring structure lateral PNP transistor;
FIG. 5: a base region ring structure transverse PNP transistor longitudinal section view;
FIG. 6: a longitudinal section of the base region ring structure after total dose radiation of the PNP transistor;
FIG. 7: completing the selective doping of impurities in different areas, forming a transverse PNP transistor structure and forming a silicon dioxide insulating layer schematic diagram;
FIG. 8: photoetching to form a schematic diagram of an N-type base region ring doping window;
FIG. 9: performing N-type base region ring doping by ion implantation;
FIG. 10: removing the photoresist schematic diagram which is used as an injection shielding layer on the surface of the silicon wafer;
FIG. 11: and forming an N-type base region ring schematic diagram.
In the drawings: 1-N type epitaxial layer; 21-P type collector region of transverse PNP transistor; 22-lateral PNP transistor P-type emitter region; 3-silicon dioxide insulating layer;41-depletion or inversion layer on the surface of the P type collector region; 42-surface depletion or inversion layer of P-type emitter after total dose irradiation; 5-N type base region ring; 7, photoresist; 8-N-type base region ring window; 9-impurities injected31P+。
Detailed Description
In order to make the objects and technical solutions of the present invention clearer and easier to understand. The present invention will be described in further detail with reference to the following drawings and examples, wherein the specific examples are provided for illustrative purposes only and are not intended to limit the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified. In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Aiming at the influence mechanism of total dose radiation on a silicon-based transverse PNP transistor, the invention provides a novel transverse PNP transistor structure which improves the total dose radiation resistance of the transistor by doping a base region ring. The bipolar transistor with the novel structure is formed by selective ion implantation: after impurity selective doping of different regions is completed through a traditional bipolar process to form a transverse PNP transistor structure, N-type impurity injection is performed on the surface of an N-type base region of the transverse PNP transistor once through a photoresist masking injection method to form an annular N + doping region on the surface of the N-type base region, and the base region width W of the transverse PNP transistor is adjustedbThe position is pushed to the inside of the N-type epitaxial layer from the surface of the N-type epitaxial layer. When the lateral PNP transistor of the base-region ring structure is in the total dose irradiation environment, although the depletion or inversion of the P-type collector region 21 is caused by the accumulation of positive charges in the oxide layer, the depletion or inversion layers 41 on the surface of the P-type collector region are formed on the two sides of the upper part of the P-type collector region 21, the depletion or inversion layers 42 on the surface of the P-type emitter region 22 are caused, but because of the base region width W, the base region width WbThe position has been moved down to the depletion and inversion of the P-type collector region 21 and the depletion and inversion of the surface of the P-type emitter region 22, so the base width of the lateral PNP transistor is not affected, and the lateral PNP transistor with the base ring structure has strong total dose radiation resistance.
A transverse PNP transistor structure comprises an N-type epitaxial layer 1 and a silicon dioxide insulating layer 3 which are sequentially arranged from bottom to top, wherein a P-type collector region 21 and a P-type emitter region 22 are arranged on the upper portion of the N-type epitaxial layer 1, the P-type collector region 21 and the P-type emitter region 22 are concentrically arranged, the depth of the P-type collector region 21 is the same as that of the P-type emitter region 22, and an N-type base region ring 5 is arranged between the P-type collector region 21 and the P-type emitter region 22. The junction depth of the N-type base region ring 5 is 10% -30% of the junction depth of the P-type collector region 21.
The invention will now be further described with reference to the following examples:
example 1
The N-type base region ring transverse PNP transistor structure comprises an N-type epitaxial layer 1 and a silicon dioxide insulating layer 3 which are sequentially arranged from bottom to top, wherein a P-type collector region 21 and a P-type emitter region 22 are arranged on the upper portion of the N-type epitaxial layer 1, the P-type collector region 21 and the P-type emitter region 22 are concentrically arranged, the depth of the P-type collector region 21 is the same as that of the P-type emitter region 22, and an N-type base region ring 5 is arranged between the P-type collector region 21 and the P-type emitter region 22.
Wherein, the junction depth of the emitter region 22 of the transverse PNP transistor is 2.5 μm, the doped impurity of the N-type base region ring 5 is phosphorus, the junction depth of the N-type base region ring 5 is 0.25 μm to 0.75 μm, the junction depth of the N-type base region ring 5 is 10 percent to 30 percent of the junction depth of the emitter region 22, and the peak impurity concentration is 5E16cm-3。
The lateral PNP transistor adopts a square emitter region with the side length of 10 mu m, a square ring collector region with the inner side length of 30 mu m and the outer side length of 50 mu m, and is limited by the junction depth and the breakdown voltage index of the collector region of the lateral PNP transistor, the distance between the inner edge of the N-type base ring 5 and the emitter region of the lateral PNP transistor is 2 mu m-3 mu m, and is controlled by the junction depth of the emitter region of the lateral PNP transistor and the forward voltage drop of a BE (positive energy transfer) junction, the distance between the outer edge of the base ring and the inner edge of the collector region is 2 mu m-3 mu m, and the width of the N-type base ring. Compared with the lateral PNP transistor with the traditional structure, the attenuation of the amplification factor of the lateral PNP transistor with the base-ring structure is reduced from 29% to 18% after the radiation of the total dose of 100krad (Si), and the lateral PNP transistor with the base-ring structure has higher total dose radiation resistance.
The preparation method of the N-type base region ring transverse PNP transistor comprises the following steps:
step 2, referring to fig. 8, coating photoresist 7 with the thickness of 2.4 microns on the surface of the silicon dioxide insulating layer, and forming an N-type base region ring window 8 through exposure and development;
Step 4. referring to FIG. 10, the implant is completePost-etching by plasma and H2SO4+H2O2Removing the photoresist 7 coated in the step 2 by using the solution;
and 5, referring to fig. 11, performing thermal annealing for 30 minutes at 950 ℃ to complete the activation of the implanted impurities, and forming a base-ring lateral PNP transistor structure.
Example 2
The P-type guard ring bipolar transistor structure comprises an N-type epitaxial layer 1 and a silicon dioxide insulating layer 3 which are sequentially arranged from bottom to top, wherein a P-type collector region 21 and a P-type emitter region 22 are arranged on the upper portion of the N-type epitaxial layer 1, the P-type collector region 21 and the P-type emitter region 22 are concentrically arranged, the depth of the P-type collector region 21 is the same as that of the P-type emitter region 22, and an N-type base region ring 5 is arranged between the P-type collector region 21 and the P-type emitter region 22.
Wherein, the transverse PNP transistor adopts a circular emitting region with the diameter of 6 μm and a 30-360-degree circular collector region with the inner diameter of 15 μm and the outer diameter of 27 μm, and if the transverse PNP transistor is less than 30 degrees, the efficiency of the transverse PNP transistor is too low and the transverse PNP transistor has no practicability; the width of the base region ring is 2.5 mu m, the distance between the inner edge of the base region ring and the emitter region of the transverse PNP transistor is 1 mu m, and the distance between the outer edge of the base region ring and the inner edge of the collector region is 1 mu m; the transverse PNP transistor N-type base region ring 5 is doped with phosphorus, the junction depth of the N-type base region ring 5 is 0.3 μm, and the peak impurity concentration is 7E16cm-3。
Compared with the lateral PNP transistor with the traditional structure, the attenuation of the amplification factor of the lateral PNP transistor with the base-ring structure is reduced from 29% to 18% after the radiation of the total dose of 100krad (Si), and the lateral PNP transistor with the base-ring structure has higher total dose radiation resistance.
The preparation method of the N-type base region ring transverse PNP transistor comprises the following steps:
step 2, referring to fig. 8, coating 1.3 μm photoresist 7 on the surface of the silicon dioxide insulating layer 3, and forming an N-type base region ring window 8 through exposure and development;
Step 4 referring to fig. 10, after implantation is completed, plasma etching and H are performed2SO4+H2O2Removing the photoresist 7 coated in the step 2 by using the solution;
and 5, referring to fig. 11, performing thermal annealing for 10 minutes at 800 ℃ to form a base ring lateral PNP transistor structure.
The total dose radiation test evaluation is respectively carried out on the novel base region ring structure transverse PNP transistor and the transverse PNP transistor with the traditional structure provided by the embodiment 1 of the invention: after the radiation of 100krad (Si) total dose, the amplification factor of the novel base-ring structure transverse PNP transistor is attenuated by 18.85%, the amplification factor of the conventional structure transverse PNP transistor is attenuated by 29.68%, and the total dose radiation resistance of the base-ring structure transistor is higher than that of the conventional structure bipolar transistor.
The above-mentioned contents are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited thereby, and any modification made on the basis of the technical idea of the present invention falls within the protection scope of the claims of the present invention.
Claims (7)
1. The base-ring-doped anti-radiation transverse PNP transistor is characterized by comprising an N-type epitaxial layer (1), wherein a P-type collector region (21) and a P-type emitter region (22) are concentrically arranged at the upper part of the N-type epitaxial layer (1), the depths of the P-type collector region (21) and the P-type emitter region (22) are the same, an N-type base ring (5) is arranged between the P-type collector region (21) and the P-type emitter region (22), and impurities doped in the N-type base ring (5) are phosphorus.
2. The base-ring-doped radiation-resistant lateral PNP transistor according to claim 1 characterized in that the junction depth of the N-type base ring (5) is 10% to 30% of the junction depth of the P-type collector region (21).
3. The base ring doped radiation resistant lateral PNP transistor of claim 1 wherein the width of the N-type base ring (5) is 30% to 80% of the base width of the lateral PNP transistor.
4. A base ring doped radiation resistant lateral PNP transistor according to claim 1 characterized in that the distance d1 between the N-type base ring (5) and the P-type collector region (21) is equal to the distance d2 between the N-type base ring (5) and the P-type emitter region (22).
5. A lateral PNP transistor with base ring doped radiation protection according to claim 1 characterized in that the upper end face of the N-type epitaxial layer (1) is provided with an insulating layer (3) of silicon dioxide.
6. The base-ring-doped radiation-resistant lateral PNP transistor of claim 1 characterized in that the N-type base ring (5) is a sector ring with a central angle of 30 ° to 360 °.
7. A method of making a base ring doped radiation resistant lateral PNP transistor of claim 1 comprising the steps of:
step 1, completing selective doping of impurities in different regions by using a traditional bipolar process to form a transverse PNP transistor structure and a silicon dioxide insulating layer (3);
step 2, coating photoresist (7) on the surface of the silicon dioxide insulating layer (3), and forming an N-type base region ring window (8) through exposure and development;
step 3, doping the region where the N-type base region ring (5) is located through ion implantation, and implanting impurities31P+(9)；
Step 4, removing the photoresist (7) coated in the step 2;
and 5, thermally annealing to form the base region ring transverse PNP transistor structure.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111863607A (en) * | 2020-07-28 | 2020-10-30 | 哈尔滨工业大学 | Radiation-resistant power transistor and preparation method thereof |
| CN111863606A (en) * | 2020-07-28 | 2020-10-30 | 哈尔滨工业大学 | Radiation-resistant power transistor and preparation method thereof |
| CN112397572A (en) * | 2020-11-17 | 2021-02-23 | 西安微电子技术研究所 | Anti-saturation structure of transverse PNP transistor and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US4339767A (en) * | 1980-05-05 | 1982-07-13 | International Business Machines Corporation | High performance PNP and NPN transistor structure |
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| US4339767A (en) * | 1980-05-05 | 1982-07-13 | International Business Machines Corporation | High performance PNP and NPN transistor structure |
| US4998155A (en) * | 1983-07-11 | 1991-03-05 | Director-General Of The Agency Of Industrial Science And Technology | Radiation-hardened semiconductor device with surface layer |
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| CN103872106A (en) * | 2014-04-04 | 2014-06-18 | 哈尔滨工业大学 | Radiation resistant bipolar device and manufacturing method thereof |
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| CN111863607A (en) * | 2020-07-28 | 2020-10-30 | 哈尔滨工业大学 | Radiation-resistant power transistor and preparation method thereof |
| CN111863606A (en) * | 2020-07-28 | 2020-10-30 | 哈尔滨工业大学 | Radiation-resistant power transistor and preparation method thereof |
| CN112397572A (en) * | 2020-11-17 | 2021-02-23 | 西安微电子技术研究所 | Anti-saturation structure of transverse PNP transistor and application thereof |
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