CN110824732A - Graphene electro-optic modulator - Google Patents
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- CN110824732A CN110824732A CN201911299709.5A CN201911299709A CN110824732A CN 110824732 A CN110824732 A CN 110824732A CN 201911299709 A CN201911299709 A CN 201911299709A CN 110824732 A CN110824732 A CN 110824732A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
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Abstract
The invention discloses a graphene electro-optic modulator, which comprises a first insulating material layer, an input waveguide and an output waveguide, wherein the input waveguide and the output waveguide are buried in the first insulating material layer; a subwavelength structure buried in the first layer of insulating material between the input waveguide and the output waveguide; the second insulating material layer is arranged above the first insulating material layer, two layers of graphene are arranged in the second insulating material layer from top to bottom, the two layers of graphene extend outwards and are connected with the metal electrode, and the lower layer of graphene and the sub-wavelength structure, and the upper layer of graphene and the lower layer of graphene are spaced by insulating materials; and the third insulating material layer is arranged above the second insulating material layer and is connected with the metal electrode. The effective refractive index of the sub-wavelength structure waveguide provided by the invention is lower than that of the common waveguide, the constraint effect on light is weakened, the modulation efficiency can be improved by one order of magnitude, the size of the modulator is correspondingly reduced by one order of magnitude, and the insertion loss is also reduced, so that the microminiaturization and high integration of the modulator are realized.
Description
Technical Field
The invention belongs to the field of integrated photonic devices, and particularly relates to a graphene electro-optic modulator.
Background
Optical modulators, light sources, photodetectors, and optical amplifiers are four important types of optically active devices, where optical modulators are key devices for high-speed, long-distance optical communications. With the rise of artificial intelligence and big data calculation in recent years, people have seen explosive growth in the demands for communication capacity, bandwidth and speed, silicon-based optical modulators have gained rapid development, and silicon materials have been widely applied to CMOS integrated circuits, and the structure manufacturing process thereof is mature, and can be produced in large scale and at low cost.
Graphene is a honeycomb-shaped two-dimensional hexagonal carbon structure material, and has unique and excellent photoelectronic characteristics. The carrier mobility of graphene at room temperature is about 15000cm2V · s, this value is more than 10 times that of the silicon material. Under certain specific conditions, such as low temperature, the carrier mobility of graphene can be even as high as 250000cm2V · s. Graphene has very good optical properties, with a system yield of about 2.3% over a wide wavelength range, and appears almost transparent. The graphene can also interact with light intensity strongly, and ultra-wideband and high-efficiency modulation of light can be realized. The basic principle of the graphene electro-optical modulator is that the chemical potential of graphene is changed by adjusting an applied voltage, so that the change of the complex refractive index of the graphene is realized, wherein the change of the real part of the complex refractive index is reflected as phase modulation, and the change of the imaginary part of the complex refractive index is reflected as absorption modulation. The current graphene electro-optic modulator still has difficulty in balancing modulation efficiency, device size and preparation difficulty.
On the other hand, the preparation process of the flat-plate photonic crystal device is complete, and electron beam Etching (EBL) and Inductively Coupled Plasma (ICP) processes are used for punching holes on Silicon On Insulator (SOI), and the diameter can be less than 60nm at the minimum. And the uniformity is good. Therefore, the sub-wavelength structure manufactured by the punching process is more feasible in process. In addition, the traditional photonic crystal is usually completed by an alignment process, and if the structure can be optimized by considering the relation between the waveguide edge and the depth of the hole in the ICP process, the device can be manufactured by one-time etching.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a graphene electro-optic modulator, and aims to solve the problems of low efficiency and large size of the existing graphene modulator.
In order to achieve the above object, the present invention provides a graphene electro-optic modulator, including a first insulating material layer, whose length, width and height directions are defined as X, Y, Z directions respectively;
an input waveguide and an output waveguide buried in the first insulating material layer;
the sub-wavelength structure is buried in the first insulating material layer and is positioned between the input waveguide and the output waveguide, and the specific implementation mode is a circular hole or a square hole which is periodically arranged;
the second insulating material layer is arranged above the first insulating material layer, covers the sub-wavelength structure in the X direction, and is internally provided with two layers of graphene up and down in the Z direction, the two layers of graphene extend outwards in the Y direction and are connected with the metal electrode, and the lower layer of graphene and the sub-wavelength structure, and the upper layer of graphene and the lower layer of graphene are spaced by insulating materials;
and the third insulating material layer is arranged above the second insulating material layer, covers the second insulating material layer in the X direction, and is connected with the metal electrode in the Y direction.
Preferably, the sub-wavelength structure employs a circular hole pattern, which includes:
the first transition waveguides are arranged periodically in the direction X, Y after the input waveguide, and the radius of the circular holes is uniform and is changed from small to big;
the second transition waveguides are positioned in front of the output waveguide and are arranged periodically in the direction X, Y, and the radius of the circular holes is uniform and is reduced from large to small;
and the uniform sub-wavelength waveguides are positioned between the first transition waveguide and the second transition waveguide and are arranged periodically in the direction X, Y, and the radius of the circular hole is kept unchanged.
Preferably, the material of the input waveguide, the output waveguide, the first transition waveguide, the second transition waveguide and the uniform sub-wavelength waveguide is consistent and is one of silicon, silicon nitride, silicon oxynitride, gallium arsenide and germanium.
Preferably, the refractive index of the second insulating material layer is 1.0-2.0, and the dimension in the Z direction is 3-400 nm; the refractive index of the third insulating material layer is 1.7-4.2, and the size of the third insulating material layer in the Z direction is 50 nm-1000 nm.
Preferably, the first transition waveguide and the second transition waveguide have a size of 1 μm to 100 μm in the X direction, a size of 0.2 μm to 1.2 μm in the Y direction, and a size of 80nm to 500nm in the Z direction as a whole.
Preferably, the round holes of the first transition waveguide are distributed according to a certain period, and the distance between adjacent round holes is 60 nm-500 nm; the minimum radius of the round hole is 4 nm-30 nm, the maximum radius is 25 nm-60 nm, the radius of the round hole is changed from small to large in the X direction, and the change period is determined by the whole length of the first transition waveguide in the X direction; the radius of the circular hole remains constant in the Y direction.
Preferably, the circular holes of the second transition waveguide are distributed according to a certain period, and the period interval is 60 nm-500 nm; the minimum radius of the round hole is 4 nm-30 nm, the maximum radius is 25 nm-60 nm, the radius of the round hole is changed from big to small in the X direction, and the change period is determined by the overall length of the second transition waveguide in the X direction; the radius of the circular hole remains constant in the Y direction.
Preferably, the uniform subwavelength waveguide has an overall dimension in the X direction of 2 μm to 100 μm, a dimension in the Y direction of 0.2 μm to 1.2 μm, and a dimension in the Z direction of 80nm to 500 nm.
Preferably, the radius of the uniform sub-wavelength waveguide circular hole is kept unchanged, the size is 25 nm-60 nm, the uniform sub-wavelength waveguide circular hole is distributed according to a certain period in the X direction and the Y direction, and the period interval is 60 nm-500 nm; the number of periods and the sub-wavelength structure waveguide are determined by the dimension in the direction X, Y.
Preferably, the dimension of the portion of the second insulating material layer between the lower-layer graphene and the subwavelength structure and between the lower-layer graphene and the upper-layer graphene in the Z direction is 1nm to 200 nm.
Through the technical scheme, compared with the prior art, the invention has the following beneficial effects:
(1) the effective refractive index of the sub-wavelength structure waveguide provided by the invention is lower than that of a common waveguide, so that the constraint effect on light is weakened, more electric fields in a TE mode deviate to high-refractive-index materials above the sub-wavelength structure waveguide, at the moment, graphene above the waveguide is in contact with an optical field more fully, the interaction between the graphene and the optical field is greatly enhanced, compared with the record that the highest modulation efficiency of the existing modulator is 2.8 V.mm, the modulation efficiency can be improved by about one order of magnitude to 0.316 V.mm, the size of the modulator is correspondingly reduced by one order of magnitude, the insertion loss is also reduced, and the microminiaturization and high integration of the modulator are realized.
(2) In order to reduce the coupling loss of a conventional waveguide and a sub-wavelength waveguide, the conventional sub-wavelength grating waveguide structure needs to increase the length of a transition coupling region, which is usually hundreds of microns long and is not beneficial to application in a silicon optical chip with ultrahigh integration level.
(3) The circular hole type sub-wavelength structure waveguide provided by the invention is simpler, after the correlation between the waveguide edge and the depth of the hole in the ICP process is considered and the structural parameters are optimized, the preparation of the device can be completed only by one-time etching, and the process robustness is good.
Drawings
Fig. 1 is a schematic plane structure diagram of a graphene electro-optic modulator provided by the present invention;
FIG. 2 is a cross-sectional view A-A of a graphene electro-optic modulator provided by the present invention;
FIG. 3 is a B-B cross-sectional view of a graphene electro-optic modulator provided by the present invention;
fig. 4 is a schematic diagram of an effective refractive index at a circular hole type sub-wavelength structure waveguide of the graphene modulator according to an embodiment of the present invention, which varies with a chemical potential of graphene.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The invention provides a graphene electro-optic modulator, which comprises a first insulating material layer 1, a low-refractive-index insulating material layer 7, a high-refractive-index insulating material layer 10, an input waveguide 2, an output waveguide 3, a circular hole type subwavelength structure, lower graphene 8 and upper graphene 9, and electrodes 11 connected with the lower graphene and the upper graphene respectively, as shown in fig. 1 to 3. The length, width, and height directions of the first insulating material layer 1 are defined as X, Y, Z directions, respectively.
The input waveguide 2, the output waveguide 3 and the circular hole type subwavelength structure are all buried in the first insulating material layer 1, wherein two ends of the subwavelength structure are respectively connected with the input waveguide and the output waveguide, a specific implementation manner can be a circular hole or a square hole, preferably, a circular hole type is adopted here, and the circular hole type includes:
the first transition waveguides 4 are positioned behind the input waveguide and are periodically arranged in the direction X, Y, the radius of the circular holes is uniform, the first transition waveguides are changed from small to large, the period in the X direction is set to be 135nm, the period in the Y direction is set to be 120nm, the radius of the circular holes is 13nm at the minimum, and the radius of the circular holes is 45nm at the maximum;
the second transition waveguides 5 are positioned in front of the output waveguide, are arranged periodically in the direction X, Y, and have uniform circular hole radius from big to small, wherein the period in the X direction is set to be 135nm, the period in the Y direction is set to be 120nm, the radius of the circular hole is 13nm at the minimum, and the radius of the circular hole is 45nm at the maximum;
and the sub-wavelength structure waveguides 6 are positioned between the first transition waveguide 4 and the second transition waveguide 5, are arranged periodically in the X, Y direction, and have the circular hole radius kept unchanged, wherein the period in the X direction is set to be 135nm, the period in the Y direction is set to be 120nm, and the circular hole radius is 45 nm.
And a low-refractive-index insulating material layer 7 provided above the first insulating material layer 1, covering the circular hole type subwavelength structure in the X direction, and having two layers of graphene arranged up and down in the Z direction inside thereof. Two layers of graphene extend outwards from the waveguide in the Y direction and are connected with the metal electrode 11, and the lower layer of graphene 8 and the circular hole type subwavelength structure, and the upper layer of graphene 9 and the lower layer of graphene 8 are separated by insulating materials.
A high refractive index insulating material layer 10 provided above the low refractive index insulating material layer 7, covering said insulating material layer 7 in the X direction, and connected to the two metal electrodes 11 in the Y direction, respectively.
In this embodiment, the input waveguide 2, the output waveguide 3, the first transition waveguide 4, the second transition waveguide 5, and the sub-wavelength structure waveguide 6 are made of the same material, and one of silicon, silicon nitride, silicon oxynitride, gallium arsenide, and germanium is selected.
The low-refractive-index insulating material layer 7 has a refractive index of 1.0 to 2.0 and a dimension in the Z direction of 30 nm.
The high-refractive-index insulating material layer 10 has a refractive index of 1.7 to 4.2 and a dimension in the Z direction of 200 nm.
The first transition waveguide 4 and the second transition waveguide 5 each have a size of 12 μm in the X direction, a size of 0.36 μm in the Y direction, and a size of 220nm in the Z direction as a whole.
The size of the sub-wavelength structure waveguide 6 in the X direction is 50 μm, and at the moment, the device can realize pi phase shift, and the size is shortened by one order of magnitude compared with the existing graphene modulator.
The subwavelength structured waveguide 6 has a dimension of 0.36 μm in the Y direction and 220nm in the Z direction.
The dimensions of the low refractive index insulating material layer 7 in the Z direction in the portions between the lower layer graphene 8 and the circular hole type subwavelength structure and between the lower layer graphene 8 and the upper layer graphene 9 are both 10 nm.
So far, the device can be manufactured by a standard process, and a curve of the change of the effective refractive index at the circular hole type sub-wavelength structure waveguide along with the chemical potential of the graphene is obtained by simulating the graphene electro-optical modulator, as shown in fig. 4. Therefore, the device can realize the effective refractive index tuning of 0.0147, can realize pi phase shift only by the size of 52.7 microns, is shortened by one order of magnitude compared with the size of the conventional graphene modulator, has the corresponding modulation efficiency of 0.316 V.mm, and greatly leads the conventional graphene modulator, so that the microminiaturization and high integration of the modulator can be realized.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. A graphene electro-optic modulator, comprising:
a first insulating material layer (1) whose length, width and height directions are defined as X, Y, Z directions, respectively;
an input waveguide (2) and an output waveguide (3) buried in the first insulating material layer (1);
the sub-wavelength structure is buried in the first insulating material layer (1) and is positioned between the input waveguide (2) and the output waveguide (3), and the specific implementation mode is a circular hole or a square hole which is periodically arranged;
the second insulating material layer (7) is arranged above the first insulating material layer (1), covers the sub-wavelength structure in the X direction, and is internally provided with two layers of graphene up and down in the Z direction, the two layers of graphene extend outwards in the Y direction and are connected with the metal electrode, and the lower layer of graphene (8) and the sub-wavelength structure as well as the upper layer of graphene (9) and the lower layer of graphene (8) are spaced by insulating materials;
and a third insulating material layer (10) arranged above the second insulating material layer (7) and covering the second insulating material layer (7) in the X direction, and the third insulating material layer is connected with the metal electrode in the Y direction.
2. The graphene electro-optic modulator of claim 1, wherein the sub-wavelength structure employs a circular hole pattern comprising:
the first transition waveguide (4) is positioned behind the input waveguide (2) and is periodically arranged in the direction X, Y, and the radius of the circular hole is uniform and is changed from small to big;
the second transition waveguides (5) are positioned in front of the output waveguide (3) and are arranged periodically in the direction X, Y, and the radius of the circular holes is uniform and is reduced from large to small;
and the uniform sub-wavelength waveguide (6) is positioned between the first transition waveguide (4) and the second transition waveguide (5) and is periodically arranged in the X, Y direction, and the radius of the circular hole is kept unchanged.
3. The graphene electro-optic modulator according to claim 2, wherein the input waveguide (2), the output waveguide (3), the first transition waveguide (4), the second transition waveguide (5) and the uniform sub-wavelength waveguide (6) are made of the same material and are one of silicon, silicon nitride, silicon oxynitride, gallium arsenide and germanium.
4. The graphene electro-optic modulator according to claim 1, wherein the second insulating material layer (7) has a refractive index of 1.0 to 2.0 and a dimension in the Z direction of 3nm to 400 nm; the refractive index of the third insulating material layer (10) is 1.7-4.2, and the size of the third insulating material layer in the Z direction is 50-1000 nm.
5. The graphene electro-optic modulator according to claim 2, wherein the first transition waveguide (4) and the second transition waveguide (5) have a size of 1 μm to 100 μm in the X direction, a size of 0.2 μm to 1.2 μm in the Y direction, and a size of 80nm to 500nm in the Z direction as a whole.
6. The graphene electro-optic modulator according to claim 2, wherein the circular holes of the first transition waveguide (4) are distributed according to a certain period, and the distance between adjacent circular holes is 60nm to 500 nm; the minimum radius of the round hole is 4 nm-30 nm, the maximum radius is 25 nm-60 nm, the radius of the round hole is changed from small to big in the X direction, and the change period is determined by the whole length of the first transition waveguide (4) in the X direction; the radius of the circular hole remains constant in the Y direction.
7. The graphene electro-optic modulator according to claim 2, wherein the circular holes of the second transition waveguide (5) are distributed according to a certain period, and the period interval is 60 nm-500 nm; the minimum radius of the round hole is 4 nm-30 nm, the maximum radius is 25 nm-60 nm, the radius of the round hole is changed from big to small in the X direction, and the change period is determined by the whole length of the second transition waveguide (5) in the X direction; the radius of the circular hole remains constant in the Y direction.
8. The graphene electro-optic modulator of claim 2, wherein the uniform sub-wavelength waveguide (6) has an overall dimension of 2 μm to 100 μm in the X direction, a dimension of 0.2 μm to 1.2 μm in the Y direction, and a dimension of 80nm to 500nm in the Z direction.
9. The graphene electro-optic modulator according to claim 8, wherein the uniform sub-wavelength waveguide (6) has circular holes with a constant radius, a size of 25nm to 60nm, and a period interval of 60nm to 500nm, wherein the circular holes are distributed in a certain period in both the X direction and the Y direction; the number of periods and the sub-wavelength structure waveguide (6) are determined by the size in the direction X, Y.
10. The graphene electro-optic modulator according to claim 1, wherein the second insulating material layer (7) has a dimension in the Z direction of 1nm to 200nm in a portion between the lower layer graphene (8) and the subwavelength structure and between the lower layer graphene (8) and the upper layer graphene (9).
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