CN110803711A - Te doped A2SnCl6Perovskite material and preparation method thereof - Google Patents
Te doped A2SnCl6Perovskite material and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a Te doped A2SnCl6Perovskite material and preparation method thereof, and Te is doped with A2SnCl6A = Cs, Rb and K in the perovskite material, a cesium-containing compound, a rubidium-containing compound, a potassium-containing compound, a tin-containing compound and a tellurium-containing compound are used as reaction reagents, concentrated HCl is used as a solvent, and Te doped A is prepared2SnCl6Perovskite materials and explore the temperature vs. A2SnCl6The effect of the luminous efficiency of the perovskite material. The invention adopts Te doping A prepared by solvothermal method2SnCl6The perovskite material has good crystallization and high quality, can be quickly synthesized in large quantity, has simple and controllable process, and is prepared byThe doping of different concentrations can be effectively realized by adjusting the charging ratio of Te/Sn, and the method has good repeatability.
Description
Technical Field
The invention belongs to the technical field of perovskite materials, and particularly relates to Te doped A2SnCl6(A = Cs, Rb, K) perovskite material and a preparation method thereof.
Background
The perovskite material is a novel inorganic functional material, has wide application prospect in the fields of solar cells, light-emitting diodes and the like with excellent optical and electrical properties, and has external quantum efficiency of lead-calcium-titanium halide ore exceeding 20% in the aspect of light-emitting application. However, lead-calcium-titanium halide ore contains Pb element with high toxicity and has great harm to human body, so that lead-containing perovskite is difficult to popularize and utilize.
Researchers tried to prepare lead-free perovskite quantum dots by replacing Pb with other elements, Sn is in the same family with Pb and has higher electron mobility, and the Marcus L. Bohm subject group (J.Am.chem.Soc., 2016, 138, 2941-2944. DOI: 10.1021/jacs.5b13470) reports that CsSnX is prepared by high-temperature thermal injection method3And Sn-based perovskites of different emission wavelengths are prepared by adjusting the halogen. However, the highest quantum yield of the Sn-containing perovskite prepared by the method is only 0.14%, and Sn is2+Is easily oxidized into Sn4+Causing the Sn-based perovskite to become unstable. On the basis of the Dungzheng waves subject group, Cs with different shapes are prepared by improving the method2SnI6The material, but the quantum yield is less than 0.5% at most, and the requirement of device application is far from being met. Therefore, how to improve the quantum yield and stability of the Sn-based perovskite is of great significance. The Tangjiang project group (adv. Funct. Mater. 2018, 1801131.DOI: 10.1002/adfm.201801131 and Front. Optoelectron. DOI:10.1007/s12200-019-0907-4) uses SnCl without changing the perovskite substrate2Is a Sn source, and is doped with different elements to respectively prepare Bi doped Cs emitting blue light2SnCl6Perovskite material of (a) and orange-emitting Sb-doped Cs2SnCl6The perovskite material of (a). But with SnCl4As a source of Sn, with Cs2SnCl6A yellow-green emitting material as a substrate has not been reported.
Disclosure of Invention
The invention aims to provide a Te-doped Cs capable of emitting yellow green light2SnCl6Calcium titaniumMethod for preparing ore and extending it to perovskite of the same family, i.e. Te doped Rb2SnCl6、K2SnCl6By this production method, A can be greatly improved2SnCl6Fluorescence quantum yield and stability of (a = Cs, Rb, K).
The technical scheme for realizing the purpose of the invention is as follows:
te doped A2SnCl6Preparation method of perovskite material, and Te is doped with A2SnCl6A = Cs, Rb and K in the perovskite material, a cesium-containing compound, a rubidium-containing compound, a potassium-containing compound, a tin-containing compound and a tellurium-containing compound are used as reaction reagents, concentrated HCl is used as a solvent, and Te-doped A is prepared2SnCl6A perovskite material.
The Te is doped with A2SnCl6The perovskite has good crystallinity, and the charging ratio of Te/Sn is 0.0004-1.
The Te is doped with A2SnCl6The preparation method of the (A = Cs, Rb and K) perovskite material specifically comprises the following steps:
(1) preparing a Cs precursor: dissolving 10mmol of cesium-containing compound in 10mL of concentrated HCl solvent, and ultrasonically dissolving to obtain 1mol/L colorless, clear and transparent Cs precursor solution;
(2) preparation of Rb precursor: dissolving 10mmol of rubidium-containing compound in 10mL of concentrated HCl solvent, and ultrasonically dissolving to obtain 1mol/L colorless, clear and transparent Rb precursor solution;
(3) preparation of Sn precursor: dissolving 5mmol of tin-containing compound in 9.415mL of concentrated HCl solvent, and ultrasonically dissolving to obtain 0.5mol/L colorless, clear and transparent Sn precursor solution;
(4) preparation of Te precursor: dissolving 0.1mmol of tellurium-containing compound in 10mL of concentrated HCl solvent, and ultrasonically dissolving to obtain a yellow and clear Te precursor solution;
(5) dissolving: measuring 1mL of Sn precursor solution prepared in the step (3) and 20 muL-3 mL of Te precursor solution prepared in the step (4), adding the Sn precursor solution and the Te precursor solution into a polytetrafluoroethylene lining of a 20mL high-temperature reaction kettle, supplementing concentrated HCl to enable the total mixed volume to be equal to 4mL, and then adding 1mL of Cs precursor solution prepared in the step (1) into the mixed solution;
or the Rb precursor solution prepared in the step (2);
or 1mmol potassium-containing compound, when adding potassium-containing compound, 1mL concentrated HCl needs to be supplemented additionally, and suspension is generated respectively;
(6) heating: respectively and tightly packaging the reaction kettles, and putting the reaction kettles into an oven to react for 5min-20h at the temperature of 25-220 ℃;
(7) collecting: respectively and naturally cooling to room temperature after the reaction is finished, collecting solid products, centrifuging, washing with isopropanol for 2-3 times, and then drying at 60 ℃ for 1h to respectively obtain Te-doped A2SnCl6A perovskite material.
And (5) directly weighing 0.03mmol-0.5mmol of doping agent tellurium-containing compound after the charging ratio of Te/Sn in the step (5) is more than 0.06, and dissolving the doping agent tellurium-containing compound in the polytetrafluoroethylene lining.
The cesium-containing compound is one of cesium chloride, cesium acetate and cesium carbonate, and cesium chloride CsCl is preferred.
The rubidium-containing compound is one of rubidium chloride, rubidium acetate and rubidium carbonate, preferably rubidium chloride RbCl.
The potassium-containing compound is one of potassium chloride, potassium acetate and potassium carbonate, and preferably potassium chloride (KCl).
The tin-containing compound is one of stannic chloride and stannic oxide, preferably stannic chloride SnCl4。
The tellurium-containing compound is one of sodium tellurite and tellurium dioxide, preferably sodium tellurite Na2TeO3。
The perovskite material prepared by the preparation method has wide application prospect in light-emitting diodes, solar cells and the like.
Compared with the prior art, the preparation method has the advantages that:
1. material composition and properties: at present, most of perovskite luminescent materials are Pb-based perovskites
High toxicity and difficult popularization and application. And Sn in the same family with Pb has low toxicity, and the Sn-based perovskite is beneficial to popularization and utilization.
2. The invention dopes Te element into Cs2SnCl6In the perovskite matrix, Te element occupies
Cs2SnCl6The Sn site of the perovskite greatly improves the quantum yield and stability of the perovskite material.
3. Te doped Cs in the invention2SnCl6Perovskite, first realized with Cs2SnCl6The perovskite is the yellow green luminescence of the substrate.
4. The invention realizes the doping of the perovskite luminescent material with the non-metal element for the first time.
5. The preparation process is simple, and the Te doped Cs at room temperature2SnCl6The perovskite also has higher quantum yield, low production cost and low energy consumption, is beneficial to large-scale production, and can be expanded to the perovskite of the same family, namely Te doped Rb2SnCl6、K2SnCl6By this method, A can be greatly improved2SnCl6Fluorescence quantum yield and stability of (a).
Drawings
FIG. 1 is Te doped Cs prepared in example 12SnCl6A spectrum of the perovskite material, a represents an emission spectrum (PL), b represents an excitation spectrum (PLE);
FIG. 2 shows Te doped Cs prepared in example 12SnCl6Perovskite and Te-undoped Cs2SnCl6Subjecting the perovskite to an X-ray powder diffraction (XRD) pattern;
FIG. 3 is Te doped Cs prepared in example 22SnCl6An emission (PL) spectrum of the perovskite material;
FIG. 4 is the Te doped Rb prepared in example 32SnCl6An emission spectrum (PL) pattern and an X-ray diffraction (XRD) pattern of the perovskite material, a being the emission spectrum (PL) pattern and b being the XRD pattern;
FIG. 5 shows Te doped K prepared in example 42SnCl6The perovskite material has an emission spectrum (PL) and an X-ray diffraction (XRD) pattern, wherein a is the emission spectrum (PL) and b is X-rayLine diffraction (XRD) pattern.
Detailed Description
The present invention will be further described with reference to the following examples and drawings, but the present invention is not limited to these examples.
Example 1
(1) Preparing a Cs precursor: dissolving 10mmol CsCl in 10mL of concentrated HCl solvent, and performing ultrasonic treatment
Dissolving to obtain 1mol/L colorless, clear and transparent Cs precursor solution;
(2) preparation of Sn precursor: adding 5mmol SnCl4Dissolved in 9.415mL of concentrated HCl solvent,
ultrasonic dissolving to obtain 0.5mol/L colorless, clear and transparent Sn precursor solution;
(3) preparation of Te precursor: adding 0.1mmol of Na2TeO3Dissolved in 10mL of concentrated HCl solvent,
ultrasonic dissolving to obtain yellow clear solution;
(4) dissolving: measuring 1mL of Sn precursor solution prepared in the step (2), and adding 20mL of high-temperature reaction
The reaction kettle is arranged in a polytetrafluoroethylene lining; then adding 2.5mL of Te precursor solution prepared in the step (3), and then supplementing and adding 0.5mL of concentrated HCl; finally, adding 1mL of the Cs precursor prepared in the step (1), and immediately generating a suspension;
(5) heating: the reaction kettle is tightly packaged, put into an oven to react for 5 hours at the temperature of 180 ℃,
then Te doped Cs can be obtained2SnCl6A perovskite material;
(6) collecting: naturally cooling to room temperature after the reaction is finished, collecting a solid product, centrifuging, and using isopropanol
Washing for 2-3 times, and drying at 60 deg.C for 1h to obtain Te-doped Cs2SnCl6A perovskite material.
Prepared Te doped Cs2SnCl6The PL spectrum of the perovskite material is shown in FIG. 1a, and the result shows that Te is doped with Cs2SnCl6The emission peak position of perovskite is at 553nm, and the PLE spectrum is shown in FIG. 1bIndicating Te doping of Cs2SnCl6The optimum excitation wavelength for the perovskite is 385 nm.
Te doped Cs prepared in example 12SnCl6Perovskite and undoped Cs2SnCl6The perovskite is subjected to X-ray powder diffraction (XRD) analysis, the analysis spectrum is shown in figure 2, and Te doped Cs can be seen from figure 22SnCl6Perovskites have a high degree of crystallinity.
Example 2
The difference from example 1 was that the reaction temperature was 25 ℃, 100 ℃, 140 ℃, 180 ℃, 220 ℃, and the other examples were the same as example 1.
Te doped Cs prepared in example 22SnCl6The emission (PL) spectrum of the perovskite material is shown in fig. 3, and the result shows that the fluorescence quantum yield is as high as 53.3% even at the reaction temperature of room temperature (25 ℃), and the luminous intensity increases with the increase of the reaction temperature, and reaches an optimal value of 81.5% at the reaction temperature of 180 ℃.
Example 3
Preparation of Rb precursor: dissolving 10mmol of RbCl in 10mL of concentrated HCl solvent, and ultrasonically dissolving to obtain 1mol/L colorless, clear and transparent Rb precursor solution;
the only difference from example 1 is that 1mL of Rb precursor solution was added to the mixed solution instead of the Cs precursor, and the rest was the same as example 1.
Example 3 preparation of Te doped Rb2SnCl6The emission (PL) spectrum of the perovskite material is shown in FIG. 4a, and the results show that Te dopes Rb2SnCl6The perovskite emission peak position is 548nm, FIG. 4b is the corresponding XRD pattern, showing that the prepared Te doped Rb2SnCl6The perovskite material is in cubic phase.
Example 4
The only difference from example 1 is that in this example, 1mmol of KCl was added to the mixed solution instead of Cs precursor, and 1.5 mL of concentrated HCl was supplemented, the other being the same as example 1.
Te doped K prepared in example 42SnCl6Perovskite materialThe PL spectrum of the material is shown in FIG. 5a, which shows that Te is doped with K2SnCl6The perovskite emission peak position is 553nm, FIG. 5b is the corresponding XRD pattern, and the results show that the prepared Te doped K2SnCl6The perovskite material is in cubic phase.
Claims (10)
1. Te doped A2SnCl6The preparation method of the perovskite material is characterized by comprising the following steps: the Te is doped with A2SnCl6A = Cs, Rb and K in the perovskite material, a cesium-containing compound, a rubidium-containing compound, a potassium-containing compound, a tin-containing compound and a tellurium-containing compound are used as reaction reagents, concentrated HCl is used as a solvent, and Te doped A is prepared2SnCl6A perovskite material.
2. The Te doped a of claim 12SnCl6The preparation method of the perovskite material is characterized by comprising the following steps: the Te is doped with A2SnCl6The perovskite has good crystallization, and the feed ratio of Te/Sn is 0.0004-1.
3. Te doped a according to any one of claims 1-22SnCl6The preparation method of the perovskite material is characterized by comprising the following steps:
(1) preparing a Cs precursor: dissolving 10mmol of cesium-containing compound in 10mL of concentrated HCl solvent, and ultrasonically dissolving to obtain 1mol/L colorless, clear and transparent Cs precursor solution;
(2) preparation of Rb precursor: dissolving 10mmol of rubidium-containing compound in 10mL of concentrated HCl solvent, and ultrasonically dissolving to obtain 1mol/L colorless, clear and transparent Rb precursor solution;
(3) preparation of Sn precursor: dissolving 5mmol of tin-containing compound in 9.415mL of concentrated HCl solvent, and ultrasonically dissolving to obtain 0.5mol/L colorless, clear and transparent Sn precursor solution;
(4) preparation of Te precursor: dissolving 0.1mmol of tellurium-containing compound in 10mL of concentrated HCl solvent, and ultrasonically dissolving to obtain a yellow and clear Te precursor solution;
(5) dissolving: measuring 1mL of Sn precursor solution prepared in the step (3) and 20 muL-3 mL of Te precursor solution prepared in the step (4), adding the Sn precursor solution and the Te precursor solution into a polytetrafluoroethylene lining of a 20mL high-temperature reaction kettle, supplementing concentrated HCl to enable the total volume of the mixed solution to be equal to 4mL, and then adding 1mL of Cs precursor solution prepared in the step (1) into the mixed solution;
or the Rb precursor solution prepared in the step (2);
or 1mmol potassium-containing compound, when adding potassium-containing compound, 1mL concentrated HCl needs to be supplemented additionally, and suspension is generated respectively;
(6) heating: respectively and tightly packaging the reaction kettles, and putting the reaction kettles into an oven to react for 5min-20h at the temperature of 25-220 ℃;
(7) collecting: respectively and naturally cooling to room temperature after the reaction is finished, collecting solid products, centrifuging, washing with isopropanol for 2-3 times, and then drying at 60 ℃ for 1h to respectively obtain Te-doped A2SnCl6A perovskite material.
4. The Te doping A of claim 32SnCl6The preparation method of the perovskite material is characterized by comprising the following steps: and (5) directly weighing 0.03mmol-0.5mmol of doping agent tellurium-containing compound after the charging ratio of Te/Sn in the step (5) is more than 0.06, and dissolving the doping agent tellurium-containing compound in the polytetrafluoroethylene lining.
5. The Te doped a of claim 12SnCl6The preparation method of the perovskite material is characterized by comprising the following steps: the cesium-containing compound is one of cesium chloride, cesium acetate and cesium carbonate.
6. The Te doped a of claim 12SnCl6The preparation method of the perovskite material is characterized by comprising the following steps: the rubidium-containing compound is one of rubidium chloride, rubidium acetate and rubidium carbonate.
7. The Te doped a of claim 12SnCl6The preparation method of the perovskite material is characterized by comprising the following steps: the tin-containing compound is stannic chloride and stannic oxideOne kind of (1).
8. The Te doped a of claim 12SnCl6The preparation method of the perovskite material is characterized by comprising the following steps: the tellurium-containing compound is one of sodium tellurite and tellurium dioxide.
9. The Te doped a of claim 12SnCl6The preparation method of the perovskite material is characterized by comprising the following steps: the potassium-containing compound is one of potassium chloride, potassium acetate and potassium carbonate.
10. Te doped A prepared by the preparation method according to any one of claims 1 to 92SnCl6A perovskite material.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111876156A (en) * | 2020-06-03 | 2020-11-03 | 华中科技大学 | White light fluorescent powder and preparation method and application thereof |
| CN112358876A (en) * | 2020-11-17 | 2021-02-12 | 广西大学 | Te-doped Cs2ZrCl6Perovskite derivative material and preparation method and application thereof |
| CN113233496A (en) * | 2021-06-16 | 2021-08-10 | 辽宁科技大学 | Method for preparing tin-based perovskite nano powder by hydrothermal method |
| CN113322516A (en) * | 2021-05-31 | 2021-08-31 | 中山大学 | Lead-free all-inorganic Te4+Doped A2InX5·H2O perovskite material and preparation method and application thereof |
| CN113372915A (en) * | 2021-07-02 | 2021-09-10 | 湘潭大学 | Single-phase fluorescent material for white light LED and preparation method and application thereof |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105523580A (en) * | 2014-09-28 | 2016-04-27 | 上海造孚新材料科技有限公司 | Perovskite type compound preparation method |
| JP2017079235A (en) * | 2015-10-19 | 2017-04-27 | 株式会社豊田中央研究所 | Solar cell, solar cell module, method of manufacturing solar cell, and solid electrolyte |
| US20170148579A1 (en) * | 2014-07-09 | 2017-05-25 | Oxford University Innovation Limited | Two-step deposition process |
| CN109337689A (en) * | 2018-09-27 | 2019-02-15 | 纳晶科技股份有限公司 | Doped quantum dot and preparation method thereof |
| CN110246971A (en) * | 2019-06-26 | 2019-09-17 | 西南石油大学 | Inorganic perovskite solar battery and preparation method based on preceding oxidation hole transmission layer |
| CN110396722A (en) * | 2019-08-09 | 2019-11-01 | 友达光电股份有限公司 | A kind of unleaded perovskite Cs2SnBr6 crystalline material and preparation method |
-
2019
- 2019-11-18 CN CN201911126275.9A patent/CN110803711A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170148579A1 (en) * | 2014-07-09 | 2017-05-25 | Oxford University Innovation Limited | Two-step deposition process |
| CN107075657A (en) * | 2014-07-09 | 2017-08-18 | 牛津大学科技创新有限公司 | Two step sedimentations |
| CN105523580A (en) * | 2014-09-28 | 2016-04-27 | 上海造孚新材料科技有限公司 | Perovskite type compound preparation method |
| JP2017079235A (en) * | 2015-10-19 | 2017-04-27 | 株式会社豊田中央研究所 | Solar cell, solar cell module, method of manufacturing solar cell, and solid electrolyte |
| CN109337689A (en) * | 2018-09-27 | 2019-02-15 | 纳晶科技股份有限公司 | Doped quantum dot and preparation method thereof |
| CN110246971A (en) * | 2019-06-26 | 2019-09-17 | 西南石油大学 | Inorganic perovskite solar battery and preparation method based on preceding oxidation hole transmission layer |
| CN110396722A (en) * | 2019-08-09 | 2019-11-01 | 友达光电股份有限公司 | A kind of unleaded perovskite Cs2SnBr6 crystalline material and preparation method |
Non-Patent Citations (2)
| Title |
|---|
| P.J.H. DRUMMEN ET AL.: "Jahn-Teller distortion in the excited state of tellurium(IV) in Cs2MCl6 (M=Zr, Sn)", 《CHEMICAL PHYSICS LETTERS》 * |
| TAN, ZHIFANG ET AL.: "Highly Efficient Blue-Emitting Bi-Doped Cs2SnCl6 Perovskite Variant: Photoluminescence Induced by Impurity Doping", 《ADVANCED FUNCTIONAL MATERIALS》 * |
Cited By (9)
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| CN111876156A (en) * | 2020-06-03 | 2020-11-03 | 华中科技大学 | White light fluorescent powder and preparation method and application thereof |
| CN112358876A (en) * | 2020-11-17 | 2021-02-12 | 广西大学 | Te-doped Cs2ZrCl6Perovskite derivative material and preparation method and application thereof |
| CN113322516A (en) * | 2021-05-31 | 2021-08-31 | 中山大学 | Lead-free all-inorganic Te4+Doped A2InX5·H2O perovskite material and preparation method and application thereof |
| CN113233496A (en) * | 2021-06-16 | 2021-08-10 | 辽宁科技大学 | Method for preparing tin-based perovskite nano powder by hydrothermal method |
| CN113372915A (en) * | 2021-07-02 | 2021-09-10 | 湘潭大学 | Single-phase fluorescent material for white light LED and preparation method and application thereof |
| CN113372915B (en) * | 2021-07-02 | 2022-08-12 | 湘潭大学 | Single-phase fluorescent material for white light LED and preparation method and application thereof |
| CN115651655A (en) * | 2022-11-16 | 2023-01-31 | 云南民族大学 | Near-infrared luminescent material with ultrahigh fluorescence thermal stability, and preparation method and application thereof |
| CN115651655B (en) * | 2022-11-16 | 2024-03-08 | 云南民族大学 | Near infrared luminescent material with ultrahigh fluorescence thermal stability and preparation method and application thereof |
| CN116285979A (en) * | 2022-12-14 | 2023-06-23 | 景德镇陶瓷大学 | Te doped Rb 2 SnCl 6 Preparation method and application of vacancy ordered double perovskite fluorescent powder |
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Application publication date: 20200218 |