CN110797740B - Intermediate infrared laser based on difference frequency of alkali metal laser - Google Patents
Intermediate infrared laser based on difference frequency of alkali metal laser Download PDFInfo
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- CN110797740B CN110797740B CN201910923865.8A CN201910923865A CN110797740B CN 110797740 B CN110797740 B CN 110797740B CN 201910923865 A CN201910923865 A CN 201910923865A CN 110797740 B CN110797740 B CN 110797740B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
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Abstract
The invention provides a mid-infrared laser based on the difference frequency of an alkali metal laser, which has the characteristics of high power, high efficiency and low threshold. The laser generates mid-infrared laser based on a difference frequency technology. The fundamental frequency light for the difference frequency consists of an alkali metal laser and its pumped neodymium-doped laser. Because the signal light is generated by pumping of the alkali metal laser, the signal light and the alkali metal laser have the coaxial characteristic, and the signal light and the alkali metal laser have better mode matching when difference frequency is carried out, and can efficiently output the mid-infrared laser. Compared with an optical parametric oscillator and an optical parametric amplifier, the laser has the characteristics of low threshold value and narrow line width. This is because the signal light of the present invention is generated by alkali metal laser pumping neodymium-doped crystal, and OPO and OPA generate signal light by nonlinear process under high gain. Compared with OPA, OPO requires higher threshold and has larger line width.
Description
Technical Field
The invention belongs to the technical field of lasers, and particularly relates to a mid-infrared laser based on the difference frequency of an alkali metal laser.
Background
In recent years, mid-infrared laser detectors are more and more widely applied, particularly in the mid-infrared band of 3-5 μm, have strong penetration capacity to smoke and atmosphere, and have wider application prospects in the aspects of gas detection and the like. At present, the types of lasers capable of outputting the wavelength band are various, wherein the mid-infrared laser output by frequency conversion is one of the main means, for example, in 2018, zhrenjiang et al output the mid-infrared wavelength band with the tuning range of 6.7-9.0 μm by using two beams of light with the tuning ranges of 949-. Compared with other methods for generating the mid-infrared light beam through frequency conversion, such as an optical parametric oscillation technology (OPO) and an optical parametric amplification technology (OPA), the mid-infrared light beam generated through the difference frequency technology has the characteristics of narrow line width and low threshold value. However, the mid-infrared output is realized by the difference frequency technology, two beams of seed light are needed, the cavity structure is complex, and the loss in the cavity is large. In addition, the seed sources commonly used at present are all solid lasers, the gain medium is solid, the thermal lens effect is obvious when high-power laser is output, the quality of light beams output under high pumping power density is poor, and the high-power intermediate infrared laser is difficult to realize.
Disclosure of Invention
In view of this, the invention provides an intermediate infrared laser based on the difference frequency of an alkali metal laser, which has the characteristics of high power, high efficiency and low threshold.
In order to achieve the purpose, the technical scheme of the invention is as follows:
the invention relates to a mid-infrared laser based on the difference frequency of an alkali metal laser, which comprises a high-reflection mirror, a semiconductor laser, an off-axis parabolic mirror, an alkali metal vapor chamber, a dichroic mirror, a neodymium-doped crystal, a dichroic mirror I, MgO, a PPLN crystal and a dichroic mirror II;
the high-reflection mirror is high-reflection for alkali metal laser, the dichroscope II is high-reflection for alkali metal laser and near-infrared laser, and the medium-infrared laser is high-transmission;
the high-reflection mirror and the dichroscope II form an alkali metal laser resonant cavity to realize light amplification on alkali metal laser;
the off-axis parabolic mirror, the alkali metal vapor chamber, the dichroic mirror, the neodymium-doped crystal, the dichroic mirror I and the MgO, wherein the PPLN crystal is sequentially positioned in the alkali metal laser resonant cavity along the light emergent direction;
the semiconductor laser is positioned outside the alkali metal laser resonant cavity, and the output semiconductor laser enters the alkali metal vapor chamber through the off-axis parabolic mirror and is used for pumping the alkali metal vapor to generate alkali metal laser;
the dichroic mirror is highly transparent to alkali metal laser and highly reflective to near-infrared laser; the neodymium-doped crystal generates near-infrared laser after being pumped by alkali metal laser; the dichroic mirror and the dichroic mirror II form a near-infrared laser resonant cavity to amplify the near-infrared laser; the dichroscope I is highly transparent to alkali metal laser and near-infrared laser, and highly reflective to intermediate-infrared laser; the alkali metal laser and the near-infrared laser are emitted to the MgO PPLN crystal, the intermediate-infrared laser is generated by the difference frequency of the MgO PPLN crystal, and the intermediate-infrared laser is output by the dichroic mirror II.
The device also comprises a first temperature control furnace and a second temperature control furnace which are respectively used for controlling the temperature of the alkali metal vapor chamber and the temperature of the MgO: PPLN crystal.
Wherein the alkali metal vapor chamber is also filled with methane.
Has the advantages that:
the laser generates mid-infrared laser based on a difference frequency technology. The fundamental frequency light for the difference frequency consists of an alkali metal laser and its pumped neodymium-doped laser. Because the signal light is generated by pumping of the alkali metal laser, the signal light and the alkali metal laser have the coaxial characteristic, and the signal light and the alkali metal laser have better mode matching when difference frequency is carried out, and can efficiently output the mid-infrared laser. Compared with an optical parametric oscillator and an optical parametric amplifier, the laser has the characteristics of low threshold value and narrow line width. This is because the signal light of the present invention is generated by alkali metal laser pumping neodymium-doped crystal, and OPO and OPA generate signal light by nonlinear process under high gain. Compared with OPA, OPO requires higher threshold and has larger line width.
Drawings
Fig. 1 is an overall schematic diagram of an alkali metal laser difference frequency-based mid-infrared laser according to the present invention.
The device comprises a high-reflectivity mirror 1, a semiconductor laser 2, an off-axis parabolic mirror 3, an alkali metal air chamber 4, a first temperature control furnace 5, a dichroic mirror 6, a neodymium-doped crystal 7, a dichroic mirror 8, a dichroic mirror I, a PPLN crystal 9, a second temperature control furnace 10 and a dichroic mirror II 11.
FIG. 2 is a schematic diagram of the nonlinear crystal difference frequency process of the present invention.
Detailed Description
The invention is described in detail below by way of example with reference to the accompanying drawings.
A semiconductor laser pumping alkali metal laser (DPAL) is a novel optical pumping gas laser, when the pumping wavelength of the alkali metal laser is 780nm, a gain medium of the alkali metal laser is rubidium steam in a steam state, and the corresponding laser wavelength is 795 nm. The thermal lens effect of DPAL is insignificant, the laser wavelength is stable and the operating temperature is close to the operating temperature range of nonlinear crystals. DPAL is a gas laser, the output laser spectrum is narrow when the DPAL is free running, the DPAL is used as a pumping source of a neodymium-doped crystal to generate near-infrared laser, and the wave band is subjected to difference frequency with 795nm in a PPLN crystal, so that the high-efficiency and narrow-spectrum-width intermediate infrared laser is realized.
The invention provides a mid-infrared laser based on the difference frequency of an alkali metal laser, which utilizes the alkali metal laser to pump neodymium-doped crystals, outputs laser with 1064nm wave band, and realizes the output of the mid-infrared laser by the difference frequency of the output light of the alkali metal laser and the laser with 1064nm wave band. The alkali metal laser is a gas laser with uniformly broadened spectrum, a spectrum selection element (a grating, an etalon and the like) is not needed, the wavelength of an output laser spectrum is stable, the line width is narrow (10-50 GHz), the influence of slight change of the wavelength of pump light on the center wavelength and the power stability of idler frequency light is weakened or eliminated, meanwhile, the coherence of the pump light is good, and the line width of output mid-infrared light is narrow.
Example 1: as shown in FIG. 1, the intermediate infrared laser of this embodiment includes a high-reflectivity mirror 1, a semiconductor laser 2, an off-axis parabolic mirror 3, an alkali metal gas chamber 4, a first temperature-controlled furnace 5, a dichroic mirror 6, and neodymium-doped yttrium vanadate (Nd: YVO)4) Crystal 7, a three-color mirror I8, a magnesium-doped periodically poled lithium niobate (MgO: PPLN) crystal 9, a second temperature control furnace 10 and a three-color mirror II 11. The fundamental frequency light for generating mid-infrared by difference frequency consists of alkali metal laser and alkali metal laser pumped neodymium-doped laser.
The surface of the high-reflection mirror is plated with a dielectric film, the dielectric film has high reflectivity to alkali metal laser, the reflectivity is generally 99.8%, the optimal value is 99.99%, and the dielectric film and the dichroic mirror II form a plano-concave resonant cavity of the alkali metal laser to realize optical amplification to the alkali metal laser.
The semiconductor laser 2 outputs semiconductor laser with a wavelength of 780.02nm and a line width of 0.1nm in vacuum, and is used for pumping a rubidium vapor chamber (an alkali metal gas chamber 4) in a temperature control furnace to realize the population inversion between the upper energy level and the lower energy level of the rubidium laser. The light beam output by the semiconductor laser 2 is incident on the off-axis parabolic mirror 3.
The off-axis parabolic mirror 3 reflects and focuses the pump light, the diameter of the mirror is 75mm, the focal length of the mirror is 50mm, the light beam focused by the off-axis parabolic mirror 3 is incident into the alkali metal gas chamber 4, the focal point is in the alkali metal gas chamber 4, and the diameter of the focal point is 0.8 mm. The off-axis parabolic mirror 3 can also have other focal lengths and sizes, and aims to reflect and focus the semiconductor laser and improve the power density of the semiconductor laser.
The alkali metal gas chamber 4 is filled with rubidium simple substance and methane (as buffer gas) which are working substances of an alkali metal laser, and after the semiconductor laser pumping after reflection and focusing, the particle number inversion of the upper energy level and the lower energy level of the rubidium atom laser can be realized, and the gain of the rubidium laser corresponding to the wavelength of 795mm is generated.
The first temperature control furnace 5 controls the temperature of the rubidium vapor chamber (the alkali metal gas chamber 4) and is used for providing working temperature conditions required by the rubidium laser to work, the temperature control range of the temperature control furnace is 20-180 ℃, the control progress is +/-0.1 ℃, and the working temperature can be set to be 157.5 ℃. The rubidium steam chamber (alkali metal gas chamber 4) is filled with rubidium simple substance and methane, which are working substances of the rubidium laser, and the methane pressure is selected to be 80 kPa. After the semiconductor laser pump after reflection and focusing, the particle number of upper and lower two energy levels of rubidium atom laser can be turned over.
The surface of the dichroic mirror 6 is plated with a dielectric film, so that the dichroic mirror has higher transmittance to 795nm rubidium laser, wherein the transmittance is generally 99.8 percent, and the preferred value is 99.99 percent; has higher reflectivity to 1064nm laser.
The neodymium-doped crystal 7 generates the stimulated radiation of near-infrared photons after being pumped by alkali metal laser. YVO is Nd in this example4The crystal has the specification of 2mm 5mm, the doping concentration of 0.3at percent, and the crystal is produced into 1064nm after being pumped by rubidium laser with the wavelength of 795 nm. YVO (Nd: YVO) wrapped by indium foil paper by utilizing heat conduction principle4The crystal is placed in the copper groove, so that the working temperature of the crystal can be maintained at room temperature. Nd: YVO4The crystal has a wider absorption peak (the pumping wavelength is 795nm), and the crystal is cut along the x axis, so that the linear polarization laser output can be realized. The neodymium-doped crystal 7 can adopt a double-end bonded neodymium-doped crystal, and mode matching of alkali metal laser in the neodymium-doped crystal is ensured; the Nd doped crystal 7 may be formed of Nd doped yttrium lithium fluoride (Nd: YL)F) Instead, the target generates the stimulated radiation of 1047nm photons after alkali metal laser pumping, and then the difference frequency of 1047nm laser and 795nm laser in the cavity, and the middle infrared laser can still be output by selecting proper nonlinear crystal, and the output wavelength is 3303 nm.
The surface of the dichroic mirror I8 is plated with a dielectric film, so that the dichroic mirror I8 has high transmissivity to alkali metal laser and near-infrared laser, and has high reflectivity to intermediate-infrared laser, so that the alkali metal laser and the near-infrared laser can both irradiate to the PPLN crystal in a cavity, and the intermediate-infrared laser is ensured to be output from the dichroic mirror II 11. In the embodiment, the transmittance of 795nm rubidium laser and 1064nm laser is higher, generally 99.8%, and the preferred value is 99.99%; the reflectivity of the laser is high for 3144nm laser, and the reflectivity is generally more than 99.5%. The dichroic mirror I8 enables both alkali metal laser and 1064nm laser to emit to the PPLN crystal in the cavity, and ensures that 3144nm laser is output from the dichroic mirror II 11.
PPLN Crystal 9 is a nonlinear crystal for difference frequency generation, and the difference frequency process is shown in FIG. 2. In order to fully utilize the maximum nonlinear coefficient of the crystal and improve the conversion efficiency, a phase matching mode (e + e → e) with parallel polarization directions of the pump light, the signal light and the idler light is selected. The invention adopts the periodically polarized lithium niobate with MgO doping concentration of 5 mol%, the specification is 9.5mm multiplied by 1mm multiplied by 20mm, and the working temperature of the crystal is room temperature.
The refractive index of the e light can be calculated by using a Sellmeier equation that the refractive index of the e light is different in the nonlinear crystal with wavelengths of different frequencies
f=(T-24.5)(T+570.82) (0)
Where T is the temperature in degrees Celsius. For a PPLN doping concentration of 5 mol%, the other parameters are:
a1=5.756,a2=0.0983,a3=0.2020,a4=189.32,a5=12.52,a6=1.32×10-2
b1=2.860×10-6,b2=4.700×10-8,b3=6.113×10-8,b4=1.516×10-4
when the three waves are collinear (e + e → e), there are
The PPLN polarization period of MgO obtained from the above three formulae is 21.98um when the crystal operating temperature T is 25 ℃.
The regulation precision of the second temperature control furnace 10 is 0.1 ℃, the initial temperature of the crystal is set to be 25 ℃, and the working temperature of the MgO: PPLN crystal is regulated and optimized according to the precision, so as to provide the working temperature required by the 795nm and 1064nm laser difference frequency process.
The dichroic mirror II11 is a concave mirror with a curvature radius of 400mm, and is coated with a dielectric film on the surface, so that the dichroic mirror has high reflectivity for 795nm and 1064nm lasers, wherein the reflectivity is generally 99.8%, and the preferred value is 99.99%; the high transmittance is realized on 3144nm laser, and the transmittance is generally 99.5%. The dichroic mirror II11 and the high reflection mirror 1 form a flat concave cavity of the alkali metal laser, and light amplification is achieved on the 795nm laser. The three-color mirror II11 and the two-color mirror 6 form a flat concave cavity of neodymium-doped laser to realize light amplification for 1064nm stimulated radiation.
Example 2: in addition to embodiment 1, the alkali metal vapor chamber 4 may also be filled with other buffer gases or components, such as helium, ethane, etc., and only the alkali metal atoms in the vapor chamber can realize population inversion under the action of the pump light.
In summary, the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (3)
1. The intermediate infrared laser based on the difference frequency of the alkali metal laser is characterized by comprising a high-reflection mirror (1), a semiconductor laser (2), an off-axis parabolic mirror (3), an alkali metal vapor chamber (4), a dichroic mirror (6), a neodymium-doped crystal (7), a dichroic mirror I (8), a MgO PPLN crystal (9) and a dichroic mirror II (11);
wherein, the high-reflection mirror (1) is highly reflective to alkali metal laser, the dichroscope II (11) is highly reflective to alkali metal laser and near-infrared laser, and highly transparent to mid-infrared laser;
the high reflection mirror (1) and the dichroscope II (11) form an alkali metal laser resonant cavity to realize optical amplification on alkali metal laser;
the off-axis parabolic mirror (3), the alkali metal vapor chamber (4), the dichroic mirror (6), the neodymium-doped crystal (7), the dichroic mirror I (8) and the MgO, wherein the PPLN crystal (9) is sequentially positioned in the alkali metal laser resonant cavity along the light-emitting direction;
the semiconductor laser (2) is positioned outside the alkali metal laser resonant cavity, and output semiconductor laser enters the alkali metal vapor chamber (4) through the off-axis parabolic mirror (3) and is used for pumping alkali metal vapor to generate alkali metal laser;
the dichroic mirror (6) is highly transparent to alkali metal laser and highly reflective to near-infrared laser; the neodymium-doped crystal (7) generates near-infrared laser after being pumped by alkali metal laser; the dichroic mirror (6) and the dichroic mirror II (11) form a near-infrared laser resonant cavity to amplify the near-infrared laser; the dichroscope I (8) is highly transparent to alkali metal laser and near-infrared laser, and highly reflective to intermediate-infrared laser; the alkali metal laser and the near-infrared laser are emitted to the MgO PPLN crystal (9), and the intermediate-infrared laser is generated by the difference frequency of the MgO PPLN crystal (9) and is output by the three-color mirror II (11).
2. The mid-infrared laser based on the difference frequency of the alkali metal laser according to claim 1, further comprising a first temperature controlled oven (5) and a second temperature controlled oven (10) for temperature control of the alkali metal vapor chamber (4) and the MgO: PPLN crystal (9), respectively.
3. Alkali laser difference frequency based mid-infrared laser according to claim 1, characterized in that the alkali vapor cell (4) is also filled with methane.
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CN104767110A (en) * | 2015-04-22 | 2015-07-08 | 南京中科神光科技有限公司 | Multi-wavelength diode pumped solid state frequency-mixing laser |
CN104767111A (en) * | 2015-04-25 | 2015-07-08 | 南京中科神光科技有限公司 | Structure-compact high power all-solid-state laser |
CN107482433A (en) * | 2017-09-12 | 2017-12-15 | 中国科学院电子学研究所 | Optical parametric oscillator |
CN109412003A (en) * | 2018-12-17 | 2019-03-01 | 中航华东光电有限公司 | Small-Sized Pulsed mid-infrared laser device |
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CN104767110A (en) * | 2015-04-22 | 2015-07-08 | 南京中科神光科技有限公司 | Multi-wavelength diode pumped solid state frequency-mixing laser |
CN104767111A (en) * | 2015-04-25 | 2015-07-08 | 南京中科神光科技有限公司 | Structure-compact high power all-solid-state laser |
CN107482433A (en) * | 2017-09-12 | 2017-12-15 | 中国科学院电子学研究所 | Optical parametric oscillator |
CN109412003A (en) * | 2018-12-17 | 2019-03-01 | 中航华东光电有限公司 | Small-Sized Pulsed mid-infrared laser device |
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