CN110793986A - Method for testing depth of damage layer of InSb wafer - Google Patents
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Abstract
The invention discloses a method for testing the depth of a damaged layer of an InSb wafer, which comprises the following steps: measuring the weight M and the thickness H of the InSb wafer; providing an isolation film on a first surface of the InSb wafer, and measuring a weight M1 of the InSb wafer having the isolation film; etching the InSb wafer with the isolating film, and performing a half-peak width test on the etched InSb wafer; when the half-width test value tended to be stable, the weight M2 of the InSb wafer whose half-width test value tended to be stable was measured, and the InSb wafer damaged layer depth H was calculated from H ═ (M1-M2) × H/M. According to the method, the InSb wafer is corroded, and the depth of the damaged layer is quantitatively determined by utilizing the relation between the half-peak width value and the stripping depth of the damaged layer, so that the quantitative determination of the damaged layer including the stress layer in the InSb wafer is realized, the optimal removal amount of the InSb wafer required by each subsequent process is met, the utilization rate and the processing efficiency of materials of the InSb wafer are improved, the undamaged InSb wafer is obtained, and theoretical basis and scientific guidance are provided for improving the performance of an infrared detector.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a method for testing the depth of a damaged layer of an InSb wafer.
Background
InSb is used as a III-V group compound semiconductor material and has the characteristics of narrow forbidden band width, small electron effective mass and high electron mobility. The material has nearly 100% of quantum efficiency in a medium wave band of 3-5 mu m, and is a key material for preparing a medium wave infrared detector. The infrared detector is subjected to rapid development of units, multi-element, one-dimensional linear arrays and two-dimensional area arrays, so that the performance of an infrared system is greatly improved, and the application of the infrared technology in the fields of astronomical observation, reconnaissance and monitoring, search and tracking, driving assistance, fire fighting, safety production and the like is facilitated.
The number of infrared detector pixels is continuously increased, the size of the pixels is continuously reduced, and the integration level is higher and higher, so that the requirements of device manufacturing on the surface quality of a wafer are higher and higher. The wafer preparation process includes cutting, grinding and polishing, and the damage depth of the machining is one of the key problems of the wafer quality. Wafer surface damage has a great influence on the performance of a device, a damaged layer not only can increase the noise of the device, but also can increase the density of surface dangling bonds, so that the surface adsorption force is enhanced, impurity ions are more easily adsorbed, the electrical performance is reduced, and the overall performance of the device is influenced.
The wafer damage layer is mainly composed of two layers of lattice incomplete areas, the outer surface layer is a cracking layer and comprises microcracks, fractures and defects, and a stress layer is arranged below the cracking layer. In the related art, an atomic force microscope or a step profiler is generally adopted to detect the surface roughness and surface undulation of a wafer or a scanning electron microscope is utilized to observe section cracks and the like to represent the thickness of a damaged layer, but the methods can only quantitatively measure the thickness of a high-deformation cracked layer on the surface of the wafer, and cannot measure the thickness of a stress layer.
Disclosure of Invention
The embodiment of the invention provides a method for testing the depth of a damaged layer of an InSb wafer, which is used for solving the problem that the quantitative determination of a stress layer in the damaged layer cannot be realized in the prior art.
The embodiment of the invention provides a method for testing the depth of a damaged layer of an InSb wafer, which comprises the following steps:
measuring the weight M and the thickness H of the InSb wafer;
providing a separation film on a first surface of the InSb wafer, and measuring a weight M1 of the InSb wafer having the separation film;
etching the InSb wafer with the isolating film, and performing a half-peak width test on the etched InSb wafer;
when the half-width test value tends to be stable, the weight M2 of the InSb wafer with the stable half-width test value is measured, the depth h of the damaged layer of the InSb wafer is calculated according to the formula 1,
h ═ M1-M2 × H/M equation 1.
According to some embodiments of the invention, the measuring the weight M and the thickness H of the InSb wafer comprises:
cleaning the InSb wafer;
the weight M and thickness H of the InSb wafer after cleaning were measured.
Further, the cleaning of the InSb wafer includes:
sequentially adopting acetone, absolute ethyl alcohol and deionized water to carry out ultrasonic cleaning on the InSb wafer;
and drying the cleaned InSb wafer by using a nitrogen gun.
According to some embodiments of the invention, the disposing an isolation film on the first side of the InSb wafer includes:
the first side is covered with an adhesive tape.
According to some embodiments of the present invention, the etching the InSb wafer having the isolation film, and performing a half-width test on the etched InSb wafer includes:
preparing a corrosive liquid;
and immersing the InSb wafer with the isolating film into the etching solution successively for etching, and performing a half-peak width test on the InSb wafer after each etching.
In some embodiments of the invention, the formulated corrosion solution comprises:
preparing hydrofluoric acid HF and hydrogen peroxide H2O2And water H2O；
According to the HF: h2O2：H2O is 1: 1: 5-1: 5: 10 to prepare the corrosive liquid.
In some embodiments of the present invention, the immersing the InSb wafer having the isolation film into the etching solution successively to perform etching includes:
putting the InSb wafer adhered with the isolating membrane into a polytetrafluoroethylene hollow holding piece;
and immersing the polytetrafluoroethylene hollow accommodating piece accommodating the InSb wafer into the corrosive liquid successively for corrosion.
In some embodiments of the present invention, the immersing the InSb wafer having the isolation film into the etching solution successively to perform etching includes:
the InSb wafer having the isolation film is successively immersed in the etching solution so that the isolation film faces downward, and is etched.
In some embodiments of the present invention, the immersing the InSb wafer having the isolation film into the etching solution successively to perform etching includes:
and continuously immersing the InSb wafer with the isolating film into the etching solution for a preset time period each time, wherein the preset time period is more than or equal to 5 seconds and less than or equal to 10 seconds.
In some embodiments of the present invention, the sequentially immersing the InSb wafer having the isolation film into the etching solution to perform etching, and performing a half-width test on the InSb wafer after each etching is completed includes:
after each etching and before the half-peak width test of the InSb wafer, the InSb wafer is cleaned by deionized water and dried by nitrogen.
By adopting the embodiment of the invention, the InSb wafer is corroded, and the depth of the damaged layer is quantitatively determined by utilizing the relation between the half-peak width value and the stripping depth of the damaged layer, so that the quantitative determination of the damaged layer including the stress layer in the InSb wafer is realized, the optimal removal amount of the InSb wafer required by each subsequent process is met, the utilization rate and the processing efficiency of the material of the InSb wafer are improved, the undamaged InSb wafer is obtained, and theoretical basis and scientific guidance are provided for improving the performance of the infrared detector.
The foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.
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Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
FIG. 1 is a flow chart of a method for testing the depth of a damaged layer of an InSb wafer in an embodiment of the invention;
fig. 2 is a flowchart of a method for testing the depth of a damaged layer of an InSb wafer in an embodiment of the invention.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
The embodiment of the invention provides a method for testing the depth of a damaged layer of an InSb wafer, which comprises the following steps of:
s101, the weight M and thickness H of the InSb wafer are measured.
S102, a spacer film was provided on the first surface of the InSb wafer, and the weight M1 of the InSb wafer having the spacer film was measured.
In the step, the first surface is the reverse surface of the InSb wafer, and the reverse surface and the front surface of the InSb wafer can be determined by an X-ray orientation instrument.
And S103, etching the InSb wafer with the isolating film, and performing a half-peak width test on the etched InSb wafer.
Since the first surface of the InSb wafer has the isolation film, the surface of the InSb wafer opposite to the first surface, which is the front surface of the InSb wafer, is etched by etching the InSb wafer. In the case of manufacturing an infrared detector using an InSb wafer, since the front surface of the wafer is used, the measured depth of the damaged layer is also the depth of the damaged layer on the front surface of the wafer, and the back surface of the wafer is etched in the process of micro-layer etching without isolation protection, so that the finally measured depth of the damaged layer is not the depth of the damaged layer on the front surface of the wafer.
S104, when the half-width test value tends to be stable, measuring the weight M2 of the InSb wafer with the stable half-width test value, calculating the depth h of the damaged layer of the InSb wafer according to the formula 1,
h ═ M1-M2 × H/M equation 1.
Here, it should be explained that the larger the half-width value is, the larger the damage of the InSb wafer is, and therefore the depth of the damaged layer can be quantitatively measured from the relationship between the half-width value and the peeling depth of the damaged layer.
By adopting the embodiment of the invention, the InSb wafer is corroded, and the depth of the damaged layer is quantitatively determined by utilizing the relation between the half-peak width value and the stripping depth of the damaged layer, so that the quantitative determination of the damaged layer including the stress layer in the InSb wafer is realized, the optimal removal amount of the InSb wafer required by each subsequent process is met, the utilization rate and the processing efficiency of the material of the InSb wafer are improved, the undamaged InSb wafer is obtained, and theoretical basis and scientific guidance are provided for improving the performance of the infrared detector.
On the basis of the above-described embodiment, various modified embodiments are further proposed, and it is to be noted herein that, in order to make the description brief, only the differences from the above-described embodiment are described in the various modified embodiments.
According to some embodiments of the invention, measuring the weight M and the thickness H of the InSb wafer comprises:
and cleaning the InSb wafer.
The weight M and thickness H of the InSb wafer after cleaning were measured.
By cleaning the InSb wafer, oil stains, organic impurities, metal particles and the like on the InSb wafer can be removed, so that the testing precision of the depth of the damaged layer of the InSb wafer is improved.
Further, cleaning the InSb wafer includes:
and sequentially adopting acetone, absolute ethyl alcohol and deionized water to carry out ultrasonic cleaning on the InSb wafer. It can be understood that the InSb wafer is ultrasonically cleaned by acetone, then by absolute ethyl alcohol, and finally by deionized water.
And drying the cleaned InSb wafer by using a nitrogen gun.
According to some embodiments of the present invention, providing an isolation film on a first side of an InSb wafer includes:
the first side was covered with tape. This protects the surface from the corrosive liquid.
According to some embodiments of the present invention, etching an InSb wafer having an isolation film, and performing a half-width test on the etched InSb wafer, includes:
preparing a corrosive liquid;
the InSb wafer having the isolation film was immersed in an etching solution successively for etching, and the InSb wafer was subjected to a half-peak width test after each etching.
It should be noted that "the InSb wafer having the isolation film is immersed in the etching solution one by one to perform etching, and the InSb wafer is subjected to the half-width test after each etching" mentioned herein is understood to mean that the InSb wafer is immersed in the etching solution for a certain period of time, then taken out to perform the half-width test, and then the InSb wafer is immersed in the etching solution, and so on repeatedly.
In some embodiments of the invention, a corrosion solution is formulated comprising:
preparing hydrofluoric acid HF and hydrogen peroxide H2O2And water H2O；
According to the HF: h2O2：H2O is 1: 1: 5-1: 5: 10 to prepare the corrosive liquid.
For example, HF, H2O2、H2O may be as follows 1: 1: the ratio of 8 is configured.
In some embodiments of the present invention, the etching of the InSb wafer having the isolation film by successively immersing the InSb wafer in an etching solution includes:
putting the InSb wafer adhered with the isolating membrane into a polytetrafluoroethylene hollow holding piece;
and (3) immersing the polytetrafluoroethylene hollow accommodating piece accommodating the InSb wafer into the corrosive liquid successively for corrosion.
From this, the etchant can corrode the InSb wafer through the fretwork of fretwork holding piece, and the specific etchant of research and development can openly carry out controllable, the microlayer corrosion steadily to the InSb wafer.
In some embodiments of the present invention, the etching of the InSb wafer having the isolation film by successively immersing the InSb wafer in an etching solution includes:
the InSb wafer having the spacer was successively immersed in an etching solution so that the spacer was faced downward, and etched. Thus, the opposite surface of the first surface can be sufficiently corroded by the corrosive liquid.
In some embodiments of the present invention, the etching of the InSb wafer having the isolation film by successively immersing the InSb wafer in an etching solution includes:
and continuously immersing the InSb wafer with the isolating film into the etching solution for a preset time period, wherein the preset time period is more than or equal to 5 seconds and less than or equal to 10 seconds.
In some embodiments of the present invention, the method for etching an InSb wafer having a separation film by successively immersing the InSb wafer in an etching solution, and performing a half-width test on the InSb wafer after each completion of the etching includes:
after each etching and before the half-peak width test of the InSb wafer, the InSb wafer is cleaned by deionized water and dried by a nitrogen gun. Thus, the measurement accuracy can be guaranteed.
In some embodiments of the invention, the wafer is an InSb wafer. Further, the crystal orientation of the InSb wafer is a <111> orientation.
It should be noted that in the description of the present specification, reference to the description of the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples", etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
The method for testing the depth of the damaged layer of the wafer according to the embodiment of the invention is described in detail in a specific embodiment with reference to fig. 2. It is to be understood that the following description is illustrative only and is not intended to be in any way limiting. All similar structures and similar variations thereof adopted by the invention are intended to fall within the scope of the invention.
The embodiment of the invention provides a method for testing the depth of a damaged layer of a wafer, wherein the wafer is an InSb wafer, and the method for testing the depth of the damaged layer of the wafer is used for measuring the depth of the damaged layer including a stress layer in the InSb wafer. As shown in fig. 2, the testing method includes:
s201, selecting an InSb wafer with a <111> crystal orientation for preparing the infrared detector.
S202, carrying out ultrasonic cleaning on the InSb wafer by sequentially adopting acetone, absolute ethyl alcohol and deionized water, and blow-drying the cleaned wafer by using a nitrogen gun.
S203, the weight M of the InSb wafer after cleaning is measured with an electronic balance with an accuracy of 0.1mg, and the thickness H of the InSb wafer is measured with a wafer thickness measuring system with an accuracy of 0.1 μ M.
And S204, adhering the back surface of the InSb wafer by using a 3M adhesive tape.
S205, the weight M1 of the InSb wafer with the isolation film was measured with an electronic balance with an accuracy of 0.1 mg.
S206, following HF: h2O2：H2O is 1: 1: 8, preparing the micro-layer corrosive liquid.
And S207, putting the InSb wafer with the isolating film into a polytetrafluoroethylene hollow accommodating piece in a mode that the isolating film faces downwards.
And S208, immersing the polytetrafluoroethylene hollow accommodating piece provided with the InSb wafer into the micro-layer corrosive liquid for 5S-10S, and taking out.
S209, washing the InSb wafer by deionized water and blow-drying the InSb wafer by a nitrogen gun.
And S210, performing a half-peak width test on the InSb wafer by using a high-resolution X-ray diffractometer.
S211, judging whether the half-peak width test value of the InSb wafer tends to be stable, if so, executing step S212, otherwise, repeating the steps S208-S210.
S212, the weight M2 of the InSb wafer was measured with an electronic balance with an accuracy of 0.1 mg.
S213, calculating the damage layer depth h of the InSb wafer according to M, H, M1 and M2.
Here, it should be explained that high-resolution X-ray double crystal diffraction is very sensitive to chipping and strain of damage to an InSb wafer, the damaged layer seriously destroys the ordered arrangement of atoms near the surface of the InSb wafer, and when X-rays are irradiated on the destroyed atom disturbing layer to cause diffraction, the half-width value of the X-ray diffraction curve is broadened at the bragg diffraction angle position, and the larger the half-width value is, the larger the damage to the InSb wafer is, so that the depth of the damaged layer can be quantitatively measured from the relationship between the half-width value and the peeling depth of the damaged layer.
According to the embodiment of the invention, the wafer is etched, and the depth of the damaged layer is quantitatively measured by utilizing the relation between the half-peak width value and the peeling depth of the damaged layer, so that the quantitative measurement of the damaged layer including the stress layer in the wafer is realized, the optimal removal amount of the wafer required by each subsequent process is met, the utilization rate and the processing efficiency of wafer materials are improved, the damaged wafer is obtained, and theoretical basis and scientific guidance are provided for improving the performance of an infrared detector.
It should be noted that the above-mentioned embodiments are merely preferred examples of the present invention, and the present invention is not limited thereto. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A method for testing the depth of a damaged layer of an InSb wafer is characterized by comprising the following steps:
measuring the weight M and the thickness H of the InSb wafer;
providing a separation film on a first surface of the InSb wafer, and measuring a weight M1 of the InSb wafer having the separation film;
etching the InSb wafer with the isolating film, and performing a half-peak width test on the etched InSb wafer;
when the half-width test value tends to be stable, the weight M2 of the InSb wafer with the stable half-width test value is measured, the depth h of the damaged layer of the InSb wafer is calculated according to the formula 1,
h ═ M1-M2 × H/M equation 1.
2. The method of claim 1, wherein measuring the weight M and the thickness H of the InSb wafer comprises:
cleaning the InSb wafer;
the weight M and thickness H of the InSb wafer after cleaning were measured.
3. The method of claim 2, wherein cleaning the InSb wafer comprises:
sequentially adopting acetone, absolute ethyl alcohol and deionized water to carry out ultrasonic cleaning on the InSb wafer;
and drying the cleaned InSb wafer by using a nitrogen gun.
4. The method of claim 1, wherein disposing a barrier film on the first side of the InSb wafer comprises:
the first side is covered with an adhesive tape.
5. The method of claim 1, wherein etching the InSb wafer with the isolation film and performing a half-width test on the etched InSb wafer comprises:
preparing a corrosive liquid;
and immersing the InSb wafer with the isolating film into the etching solution successively for etching, and performing a half-peak width test on the InSb wafer after each etching.
6. The method of claim 5, wherein the formulating the corrosion solution comprises:
preparing hydrofluoric acid HF and hydrogen peroxide H2O2And water H2O；
According to the HF: h2O2：H2O is 1: 1: 5-1: 5: 10 to prepare the corrosive liquid.
7. The method according to claim 5, wherein the step of immersing the InSb wafer having the isolation film into the etching solution successively for etching comprises:
putting the InSb wafer adhered with the isolating membrane into a polytetrafluoroethylene hollow holding piece;
and immersing the polytetrafluoroethylene hollow accommodating piece accommodating the InSb wafer into the corrosive liquid successively for corrosion.
8. The method according to claim 5, wherein the step of immersing the InSb wafer having the isolation film into the etching solution successively for etching comprises:
the InSb wafer having the isolation film is successively immersed in the etching solution so that the isolation film faces downward, and is etched.
9. The method according to claim 5, wherein the step of immersing the InSb wafer having the isolation film into the etching solution successively for etching comprises:
and continuously immersing the InSb wafer with the isolating film into the etching solution for a preset time period each time, wherein the preset time period is more than or equal to 5 seconds and less than or equal to 10 seconds.
10. The method according to claim 5, wherein the step of immersing the InSb wafer having the isolation film in the etching solution successively for etching, and performing a half-width test on the InSb wafer after each completion of etching comprises:
after each etching and before the half-peak width test of the InSb wafer, the InSb wafer is cleaned by deionized water and dried by nitrogen.
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| CN115116881A (en) * | 2022-08-25 | 2022-09-27 | 西安奕斯伟材料科技有限公司 | Method and system for measuring depth of damaged layer on surface of wafer |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111739815A (en) * | 2020-08-21 | 2020-10-02 | 西安奕斯伟硅片技术有限公司 | Method and system for measuring wafer damage depth and computer storage medium |
| CN115116881A (en) * | 2022-08-25 | 2022-09-27 | 西安奕斯伟材料科技有限公司 | Method and system for measuring depth of damaged layer on surface of wafer |
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