CN110789011A - Novel photovoltaic right-angle monocrystalline silicon piece and manufacturing method thereof - Google Patents
Novel photovoltaic right-angle monocrystalline silicon piece and manufacturing method thereof Download PDFInfo
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 84
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 235000012431 wafers Nutrition 0.000 claims abstract description 60
- 239000000463 material Substances 0.000 claims abstract description 51
- 238000005520 cutting process Methods 0.000 claims abstract description 48
- 239000011162 core material Substances 0.000 claims abstract description 46
- 238000005253 cladding Methods 0.000 claims abstract description 10
- 239000010985 leather Substances 0.000 claims abstract description 8
- 239000013078 crystal Substances 0.000 claims description 42
- 239000002994 raw material Substances 0.000 claims description 9
- 238000002050 diffraction method Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 38
- 229910052710 silicon Inorganic materials 0.000 description 37
- 239000010703 silicon Substances 0.000 description 37
- 238000000034 method Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- OBOXTJCIIVUZEN-UHFFFAOYSA-N [C].[O] Chemical compound [C].[O] OBOXTJCIIVUZEN-UHFFFAOYSA-N 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009533 lab test Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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Abstract
The invention provides a novel photovoltaic right-angle monocrystalline silicon piece and a manufacturing method thereof, wherein the manufacturing method comprises the following steps: longitudinally cutting four sides of a square inscribed in the cross section of the single crystal silicon rod to obtain a regular quadrangular prism of a large core material and four side cladding materials; longitudinally cutting along the connecting line of the midpoints of two opposite sides of the cross section of the large core material regular quadrangular prism to obtain four small core material regular quadrangular prisms; transversely cutting the small core material regular quadrangular prism to obtain a plurality of core material right-angle monocrystalline silicon wafers; longitudinally cutting three sides in a rectangle inscribed along the cross section arch surface of the edge leather to obtain a large edge material quadrangular prism of a quadrangular prism shape with the long side length of the long side of the cross section being l'; transversely cutting along the large sapwood quadrangular prism at a transverse cutting interval of l' to obtain a small sapwood quadrangular prism; longitudinally cutting along the small sapwood quadrangular prism to obtain a plurality of sapwood right-angle monocrystalline silicon wafers; the manufacturing method provided by the invention applies the crystallography principle, fully utilizes the boundary leather material, improves the production utilization rate and saves the cost.
Description
Technical Field
The invention belongs to the technical field of right-angle monocrystalline silicon piece manufacturing, and particularly relates to a novel photovoltaic right-angle monocrystalline silicon piece and a manufacturing method thereof.
Background
Since 2000 years, monocrystalline silicon materials for solar energy have been developed rapidly, because silicon is an inexhaustible resource on the earth surface, silicon is one of the most powerful materials in semiconductor materials, the physical and chemical properties are stable, the weather resistance is extremely high, the production process and the use process are not harmful to the environment, and silicon is not only an information basic material in the modern society, but also the most important irreplaceable basic material of new energy.
The production of silicon semiconductor materials, both in terms of yield and quality, has been rapidly advanced in recent years, and the silicon single crystals commonly used for solar energy in China several years ago are mainly 6 inches (152.4mm), are developed to be 8-9 inches (203.2mm-228.6mm) at present, and 18 inches (457.2mm) are also produced in laboratory tests, and in the current production process, the method mainly adopts a method of cutting a rod into sections, and the leftover materials are directly discarded or cleaned again to melt and pull crystal, so that the waste of raw materials is directly discarded, while the leftover materials are cleaned again to melt and pull crystal, so that the cleaning cost is high, the purity is not easy to control, the cleaning is not good but pollution is brought in, the normal crystal pulling is influenced, and the waste of working hours in the early period is caused.
Disclosure of Invention
In order to solve the technical problems, the invention provides a novel photovoltaic right-angle monocrystalline silicon piece and a manufacturing method thereof.
The invention provides a manufacturing method of a novel photovoltaic right-angle monocrystalline silicon piece, which comprises the following steps:
longitudinally cutting four sides of a square inscribed in the cross section of the single crystal silicon rod to obtain a regular quadrangular prism of a large core material and four side cladding materials; longitudinally cutting along the connecting line of the midpoints of two opposite sides of the cross section of the large core material regular quadrangular prism to obtain four small core material regular quadrangular prisms;
transversely cutting the small core material regular quadrangular prism to obtain a plurality of core material right-angle monocrystalline silicon wafers with the thickness of d and the side length of a square of l;
longitudinally cutting three sides in a rectangle inscribed along the cross section arc surface of the edge leather to obtain a large edge material quadrangular prism of a quadrangular prism shape with the long side length of the long side of the cross section being l';
transversely cutting along the large sapwood quadrangular prism at a transverse cutting interval of l' to obtain a small sapwood quadrangular prism;
and longitudinally cutting along the small-edge material quadrangular prism to obtain a plurality of edge material right-angle monocrystalline silicon wafers with the thickness of d 'and the side length of a square of l'.
FIG. 7 is a schematic structural diagram of a single crystal silicon rod being sliced; the thickness d of the right-angle monocrystalline silicon wafer ranges from 0.15 mm to 0.22mm, the shaded part in figure 1 is a square except other materials (which can be used for other purposes) for preparing the silicon wafer, and the silicon wafer provided by the invention can be further processed into a quasi-square shape in the manufacturing process.
Crystal orientation is optional, and in this regard, one generally does not consider what crystal orientation is the skived flaw-piece? Is it in compliance with the requirements for fabricating solar cells? Can the crystal orientation of the solar right-angle monocrystalline silicon wafer be consistent with that of the original solar right-angle monocrystalline silicon wafer? In the development process, the crystal orientation is mainly discussed from the aspect of the crystal structure, and the specific details are as follows:
as shown in fig. 3 and 4, the crystalline silicon structure is a diamond structure, and for the crystal planes (010) and (001), the crystal planes and (100) intersect at 90 °, the edge lines of the cylindrical crystal of silicon single crystal ("two adjacent") are connected with the edge lines, and the arc appearing along the edge line connection ("longitudinal") and cutting down to the bottom is the edge skin, as shown in fig. 5, a round single crystal silicon rod can be cut into four edge skins and shows the directions of the crystal planes of the four skinned materials, fig. 6 shows the directions of the crystal planes of the four skinned materials, and it can be known from the cutting diagram that if the pulled right-angle single crystal silicon wafer is the (100) crystal plane, the directions of the edge skin crystal we cut are the (010) and (001) directions, and because the single crystal silicon has the characteristic of symmetry and belongs to the isometric crystal system, the atom arrangement structure is completely the same in the three crystal planes (100), (010) and (001), that is (100) to (010) to (001), therefore, the arrangement structure of atoms of the four cut edge cladding materials is the same as the direction of (100), namely the crystal direction of the four edge cladding materials is the same as the crystal direction of the original solar right-angle monocrystalline silicon wafer, other parameters are naturally the same, the silicon wafer meeting the solar photovoltaic use can be cut by using the four edge cladding materials, the silicon wafer is equal to the silicon wafer cut in the vertical crystal pulling direction, the silicon wafer meeting the solar silicon wafer requirements can be cut by using the four edge cladding materials by using the crystal structure principle, and the method has very important significance for realizing the maximum utilization rate in the production process.
Further, the shape of the core material right-angle monocrystalline silicon piece is the same as that of the side material right-angle monocrystalline silicon piece, namely: d 'and l' are the same.
Further, a pretreatment step of the silicon single crystal rod:
presetting the side length l and the thickness d of a core material right-angle monocrystalline silicon wafer;
pulling the crystal according to the side length l of the core material right-angle monocrystalline silicon wafer to obtain a monocrystalline silicon rod raw material with the diameter D, wherein,
and removing the head and the tail of the monocrystalline silicon rod raw material to obtain the cylindrical monocrystalline silicon rod, wherein the length of the monocrystalline silicon rod is L.
Furthermore, the length of the short side of the cross section of the edge material quadrangular prism is k, wherein,
furthermore, the crystal orientation symmetry property of the edge material right-angle monocrystalline silicon piece is the same as that of the core material right-angle monocrystalline silicon piece.
The invention also provides a novel photovoltaic right-angle monocrystalline silicon piece, which is prepared by the following steps:
longitudinally cutting four sides of a square inscribed in the cross section of the single crystal silicon rod to obtain a regular quadrangular prism of a large core material and four side cladding materials; longitudinally cutting along the connecting line of the midpoints of two opposite sides of the cross section of the large core material regular quadrangular prism to obtain four small core material regular quadrangular prisms;
transversely cutting the small core material regular quadrangular prism to obtain a plurality of core material right-angle monocrystalline silicon wafers with the thickness of d and the side length of a square of l;
longitudinally cutting three sides in a rectangle inscribed along the cross section arc surface of the edge leather to obtain a large edge material quadrangular prism of a quadrangular prism shape with the long side length of the long side of the cross section being l';
transversely cutting along the large sapwood quadrangular prism at a transverse cutting interval of l' to obtain a small sapwood quadrangular prism;
and longitudinally cutting along the small-edge material quadrangular prism to obtain a plurality of edge material right-angle monocrystalline silicon wafers with the thickness of d 'and the side length of a square of l'.
Further, the shape of the core material right-angle monocrystalline silicon piece is the same as that of the side material right-angle monocrystalline silicon piece, namely: d 'and l' are the same.
Further, a pretreatment step of the silicon single crystal rod:
presetting the side length l and the thickness d of a core material right-angle monocrystalline silicon wafer;
pulling the crystal according to the side length l of the core material right-angle monocrystalline silicon wafer to obtain a monocrystalline silicon rod raw material with the diameter D, wherein,
and removing the head and the tail of the monocrystalline silicon rod raw material to obtain the cylindrical monocrystalline silicon rod, wherein the length of the monocrystalline silicon rod is L.
Furthermore, the length of the short side of the cross section of the edge material quadrangular prism is k, wherein,
furthermore, the crystal orientation symmetry property of the edge material right-angle monocrystalline silicon piece is the same as that of the core material right-angle monocrystalline silicon piece.
The manufacturing method provided by the invention applies the crystallography principle, combines the size condition of the silicon wafers in the market, fully utilizes the edge leather, improves the production utilization rate, saves the cost, produces more silicon wafers with the same one kilogram of silicon, and tests show that the parameters of the service life, the resistivity, the oxygen-carbon content, the content of other impurities and the like of all the silicon wafers prepared by the method are consistent, and the silicon wafers cut from the square column bodies and the rectangular column bodies have no difference.
Drawings
FIG. 1. examples 1-5 top views of silicon single crystal rods cut into silicon wafers;
FIG. 2 is a top view of a silicon single crystal bar cut into silicon wafers in comparative examples 1 to 5;
FIG. 3 is a diagram of the diamond morphology and the spatial position of the crystal face;
FIG. 4 is a polar-ray-erythrography projection of a crystal plane;
FIG. 5 shows the position relationship between the crystal face and the ridge;
FIG. 6 is a crystal diagram of the edge-skin material;
FIG. 7 is a schematic diagram of the structure of examples 1-5 for cutting a silicon single crystal rod into silicon wafers.
Detailed Description
Example 1
The embodiment provides a manufacturing method of a novel photovoltaic right-angle monocrystalline silicon piece, which comprises the following steps:
longitudinally cutting four sides of a square inscribed in the cross section of the single crystal silicon rod to obtain a regular quadrangular prism of a large core material and four side cladding materials; longitudinally cutting along the connecting line of the midpoints of two opposite sides of the cross section of the large core material regular quadrangular prism to obtain four small core material regular quadrangular prisms;
transversely cutting the small core material regular quadrangular prism to obtain a plurality of core material right-angle monocrystalline silicon wafers with the thickness of d and the side length of a square of l;
longitudinally cutting three sides in a rectangle inscribed along the cross section arc surface of the edge leather to obtain a large edge material quadrangular prism of a quadrangular prism shape with the long side length of the long side of the cross section being l';
transversely cutting along the large sapwood quadrangular prism at a transverse cutting interval of l' to obtain a small sapwood quadrangular prism;
and longitudinally cutting along the small-edge material quadrangular prism to obtain a plurality of edge material right-angle monocrystalline silicon wafers with the thickness of d 'and the side length of a square of l'.
Yield increase ratio (%) - (a2-a1)/a 1; a2 is the total area of the silicon wafers prepared in each example, A1 is the total area of the silicon wafers prepared in each comparative example, examples 1 to 5 correspond to comparative examples 1 to 5, respectively.
TABLE 1 parameters and silicon wafer specifications for the preparation of silicon wafers by the method of example 1
TABLE 2 parameters for preparing silicon wafers and silicon wafer specifications for a cut-to-slice crystal pulling silicon wafer process
The silicon wafer pulling method for cutting one wafer is the prior art, and the silicon wafer pulling method for cutting four wafers is the method provided by the invention.
As can be seen from tables 1 and 2, compared with the preparation method in the prior art, the method provided by the invention can significantly improve the yield of the silicon wafer when preparing the silicon wafer, and the improvement rate is more than 30%.
Finally, it should be noted that the above embodiment is only used for illustrating the technical solution of the present invention with the crystal orientation (100) and not for limiting, although the present invention is described in detail with reference to the preferred embodiment, those skilled in the art should understand that the technical solution of the present invention can be modified or substituted with equivalents without departing from the spirit and scope of the technical solution of the present invention, which should be covered by the claims of the present invention.
Claims (10)
1. A manufacturing method of a novel photovoltaic right-angle monocrystalline silicon piece is characterized by comprising the following steps:
longitudinally cutting four sides of a square inscribed in the cross section of the single crystal silicon rod to obtain a regular quadrangular prism of a large core material and four side cladding materials; longitudinally cutting along the connecting line of the midpoints of two opposite sides of the cross section of the large core material regular quadrangular prism to obtain four small core material regular quadrangular prisms;
transversely cutting the small core material regular quadrangular prism to obtain a plurality of core material right-angle monocrystalline silicon wafers with the thickness of d and the side length of a square of l;
longitudinally cutting three sides in a rectangle inscribed along the cross section arc surface of the edge leather to obtain a large edge material quadrangular prism of a quadrangular prism shape with the long side length of the long side of the cross section being l';
transversely cutting along the large sapwood quadrangular prism at a transverse cutting interval of l' to obtain a small sapwood quadrangular prism;
and longitudinally cutting along the small-edge material quadrangular prism to obtain a plurality of edge material right-angle monocrystalline silicon wafers with the thickness of d 'and the side length of a square of l'.
2. The manufacturing method according to claim 1, wherein the shape of the core material right-angle monocrystalline silicon piece and the shape of the rim material right-angle monocrystalline silicon piece are the same, that is: d 'and l' are the same.
3. The manufacturing method according to claim 2, wherein the single crystal silicon rod pretreatment step: presetting the side length l and the thickness d of a core material right-angle monocrystalline silicon wafer;
pulling the crystal according to the side length l of the core material right-angle monocrystalline silicon wafer to obtain a monocrystalline silicon rod raw material with the diameter D, wherein,
and removing the head and the tail of the monocrystalline silicon rod raw material to obtain the cylindrical monocrystalline silicon rod, wherein the length of the monocrystalline silicon rod is L.
4. The manufacturing method according to claim 2, wherein the lateral cross-sectional short side length of the edged quadrangular prism is k, wherein,
5. the manufacturing method according to claim 1, wherein the material of the edge material of the right-angle monocrystalline silicon piece has the same crystal symmetry as the material of the core material of the right-angle monocrystalline silicon piece.
6. The novel photovoltaic right-angle monocrystalline silicon piece is characterized by being prepared by the following steps:
longitudinally cutting four sides of a square inscribed in the cross section of the single crystal silicon rod to obtain a regular quadrangular prism of a large core material and four side cladding materials; longitudinally cutting along the connecting line of the midpoints of two opposite sides of the cross section of the large core material regular quadrangular prism to obtain four small core material regular quadrangular prisms;
transversely cutting the small core material regular quadrangular prism to obtain a plurality of core material right-angle monocrystalline silicon wafers with the thickness of d and the side length of a square of l;
longitudinally cutting three sides in a rectangle inscribed along the cross section arc surface of the edge leather to obtain a large edge material quadrangular prism of a quadrangular prism shape with the long side length of the long side of the cross section being l';
transversely cutting along the large sapwood quadrangular prism at a transverse cutting interval of l' to obtain a small sapwood quadrangular prism;
and longitudinally cutting along the small-edge material quadrangular prism to obtain a plurality of edge material right-angle monocrystalline silicon wafers with the thickness of d 'and the side length of a square of l'.
7. The novel photovoltaic right-angle monocrystalline silicon wafer as set forth in claim 6, wherein the core material right-angle monocrystalline silicon wafer and the edge material right-angle monocrystalline silicon wafer are identical in shape, namely: d 'and l' are the same.
8. The novel photovoltaic right-angle monocrystalline silicon wafer according to claim 7, wherein the pretreatment step of the monocrystalline silicon rod comprises:
presetting the side length l and the thickness d of a core material right-angle monocrystalline silicon wafer;
pulling the crystal according to the side length l of the core material right-angle monocrystalline silicon wafer to obtain a monocrystalline silicon rod raw material with the diameter D, wherein,
and removing the head and the tail of the monocrystalline silicon rod raw material to obtain the cylindrical monocrystalline silicon rod, wherein the length of the monocrystalline silicon rod is L.
9. The novel rectangular monocrystalline silicon wafer for photovoltaic use as claimed in claim 7, wherein the rectangular prism of said edge material has a cross-sectional short side length of k, wherein
10. The novel right-angle monocrystalline silicon wafer for photovoltaic use according to claim 6, wherein the symmetry properties of the crystal orientation of the edge material right-angle monocrystalline silicon wafer are the same as those of the core material right-angle monocrystalline silicon wafer.
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| CN112590032A (en) * | 2020-12-03 | 2021-04-02 | 天津市环智新能源技术有限公司 | Solar silicon wafer and roughness control method thereof |
| WO2021082514A1 (en) * | 2019-11-01 | 2021-05-06 | 常州时创能源股份有限公司 | Method for cutting crystalline silicon edge scrap material |
| CN113601738A (en) * | 2021-07-16 | 2021-11-05 | 宇泽半导体(云南)有限公司 | Processing method for processing rectangular photovoltaic cell silicon wafer by using native single crystal silicon rod |
| CN114454360A (en) * | 2021-08-19 | 2022-05-10 | 青岛高测科技股份有限公司 | Silicon rod cutting method, device and system |
| CN114454362A (en) * | 2021-07-13 | 2022-05-10 | 青岛高测科技股份有限公司 | Silicon rod cutting method, device and system |
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Application publication date: 20200214 |