CN110769944B - Electromagnetic wave shielding coating method - Google Patents
Electromagnetic wave shielding coating method Download PDFInfo
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- CN110769944B CN110769944B CN201880023840.6A CN201880023840A CN110769944B CN 110769944 B CN110769944 B CN 110769944B CN 201880023840 A CN201880023840 A CN 201880023840A CN 110769944 B CN110769944 B CN 110769944B
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- B05D5/12—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/002—Pretreatement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/007—After-treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
- H05K9/0092—Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising electro-conductive pigments, e.g. paint, ink, tampon printing
Abstract
The invention relates to an electromagnetic wave shielding coating method, which is characterized by comprising the following steps: a loading step of attaching one surface of the electronic component to a transport carrier; an impregnation step of impregnating (taping) the electronic component attached to the conveying carrier in a housing tank housing the metal ink, thereby coating the metal ink on the exposed outer surface of the electronic component; a firing step of curing the metal ink coated on the electronic component; and an unloading step of separating the electronic component from the transport carrier.
Description
Technical Field
The present invention relates to an electromagnetic wave shielding coating method, and more particularly, to an electromagnetic wave shielding coating method characterized in that an electromagnetic wave shielding film is formed on a surface of an electronic component by dipping (taping) the surface of the electronic component into a metal ink.
Background
Recently, rapid development of the electronic and electrical industry and information communication technology provides much convenience and moisture to human life. However, in addition to these advantages, various side effects are produced, one of which is the harmfulness of the electromagnetic waves generated thereby. Electromagnetic waves generated from household electrical appliances, information communication equipment, industrial equipment, and the like cause harm to the human body together with electromagnetic interference (EMI) between the equipment, and thus become a new environmental problem. In addition, with the acceleration of high speed and wide bandwidth of electronic and information communication devices, information communication devices such as mobile phones, notebook computers, Personal Digital Assistants (PDAs), and daily necessities have been reduced in size, thickness, and weight, which has led to a serious EMI problem, and thus, there is a strong need for technical development to solve this problem.
Generally, in a packaging process in a semiconductor element process, a semiconductor chip after fabrication is molded with an insulating resin to protect it from an external environment. The finished electronic device may generate electromagnetic waves during operation or may be affected by the electromagnetic waves generated at the periphery to generate errors, thereby causing serious defects of the electronic device.
As another means for solving this problem, there is a method of forming an electron wave-shielding film on the surface of an electronic component or the outer surface of a resin molding by a dry method or a wet method.
The dry method generally employs a method of forming an electromagnetic wave shielding film by sputtering. In the sputtering method, the sputtering apparatus is expensive, and requires a long time for sputtering, which has a problem of low efficiency. Further, the sputtering process has a disadvantage that it is difficult to form the metal layer with a uniform thickness on the upper and side surfaces, and thus a mechanical process apparatus for compensating the disadvantage is required to be further increased. In order to solve the above-mentioned problems, a method and an apparatus for uniformly forming an electromagnetic wave-shielding film on the upper surface and the side surface are disclosed in korean patent publication KR10-1686318B1(2016, 12, 7).
The wet method is a spray method which is more general and is superior to the sputtering method in terms of production efficiency, but has the following problems: it is not easy to spray the entire surface of the electronic component, particularly the side surface of the electronic component, due to its structural characteristics, and dust generated during the spraying process may cause waste of ink material and contamination in the semiconductor clean room. Further, as in the foregoing sputtering process, it is difficult to coat a metal layer of uniform thickness for forming an electromagnetic wave shielding film on the upper and side surfaces in the sputtering process.
In addition, since the plating method is weak in adhesion between the metal layer and the resin, an additional pretreatment process for generating roughness is disclosed in korean patent publication No. 10-0839930 (2008, 6/20). However, the plating solution used in the plating step has a disadvantage that it requires special management and handling in terms of environmental safety.
Most importantly, the sputtering method, the spraying method, and the plating method all cause a problem that the metal shielding film is formed in a region where electromagnetic wave shielding is not required, and form the electromagnetic wave shielding film only on a necessary shielding region except for a mounting surface (PCB surface) in the entire surface of the electronic component. In order to prevent this problem, for example, a mounting surface that does not need shielding may be masked using an adhesive tape, but as a metal shielding film is also applied to the adhesive tape, when an electronic component is unloaded (unloading), cracks are generated in the metal shielding film, and an electromagnetic wave shielding function cannot be performed at all, and thus, in order to prevent such a defect, a further pre-cutting (pre-cutting) process is required.
Disclosure of Invention
Accordingly, the present invention has been made to solve the above-mentioned conventional problems, and an object of the present invention is to provide an electromagnetic wave shielding coating method capable of forming an electromagnetic wave shielding film having a uniform thickness on the surface of an electronic component by immersing the exposed surface of the electronic component in a metal ink.
The object is achieved by an electromagnetic wave shielding coating method of the present invention, comprising: a loading step of attaching one surface of the electronic component to a transport carrier; an impregnation step of impregnating (taping) the electronic component attached to the conveying carrier in a housing tank housing the metal ink, thereby coating the metal ink on the exposed outer surface of the electronic component; a firing step of curing the metal ink coated on the electronic component; and an unloading step of separating the electronic component from the transport carrier.
Here, it is preferable that a surface treatment step of imparting hydrophilicity to the exposed surfaces of the electronic components attached to the transport carrier is further performed before the impregnation step.
In addition, it is preferable that the surface of the electronic component is subjected to plasma treatment in the surface treatment step.
Further, it is preferable that the electronic component attachment surface of the transport carrier has hydrophobicity.
Further, it is preferable that a leveling step of homogenizing a coating thickness of the metallic ink coated on the surface of the electronic component is further performed before the firing step.
Further, it is preferable that in the leveling step, the metallic ink excessively applied on the surface of the electronic component in the dipping step is scraped off with a blade so as to be leveled (leveling) into a flat shape.
Further, it is preferable that in the leveling step, the metallic ink excessively applied on the surface of the electronic component in the dipping step is absorbed with a blade made of an absorbing material, thereby leveling (leveling) into a flat shape.
Further, it is preferable that in the impregnation step, the impregnation depth of the electronic component is controlled in accordance with the specification of the electronic component attached to the transport carrier.
Preferably, the storage tank adjusts a water level of the metal ink to a depth equal to or lower than a thickness of the electronic component.
Preferably, the carrier is a carrier film that is transported by a roll-to-roll method, and a bonding portion is provided on one side surface of the carrier film, and one surface of the electronic component is capable of being attached to the bonding portion.
In the dipping step, it is preferable that the dipping depth of the electronic component is controlled by pressing the opposite surface of the carrier to which the electronic component is attached to the holding tank with a dipping roller controlled to be lifted and lowered on the upper side of the holding tank.
In the dipping step, it is preferable that the dipping roller that absorbs the metal ink in the storage tank is rotated and the metal ink is applied to the outer surface of the electronic component that moves above the dipping roller.
The present invention forms an electromagnetic wave shielding film of uniform thickness on the surface of an electronic component by immersing the surface of the electronic component in a metal ink, and thus can provide an excellent electromagnetic wave shielding effect through a simplified process.
In addition, when the electromagnetic wave shielding film is formed by the conventional sputtering method, an additional process of removing the electromagnetic wave shielding film formed in a necessary or more region is required after sputtering, and in this process, cracks are generated in the electromagnetic wave shielding film, and the original electromagnetic wave shielding function cannot be performed due to the cracks. Unlike this conventional method, in the present invention, after the mounting surface of the electronic component is attached to the attaching portion of the carrier, the electromagnetic wave shielding film is formed by immersing the exposed surface of the electronic component in the metallic ink, so that it is possible to prevent the electromagnetic wave shielding film from being formed on a portion more than necessary, thereby making it possible to omit an additional step for removing a portion of the electromagnetic wave shielding film in the conventional art and to prevent the generation of cracks in the electromagnetic wave shielding film.
Description of the drawings
Fig. 1 is a process sequence diagram of an electromagnetic wave shield coating method according to a first embodiment of the present invention;
FIG. 2 is a process diagram of FIG. 1 in steps;
FIG. 3 is an enlarged view of the receiving groove shown in FIG. 2;
fig. 4 is a process diagram showing a modification of the dipping step of the electromagnetic wave shield coating method according to the first embodiment of the present invention;
fig. 5 is a process diagram of an electromagnetic wave shield coating method according to a second embodiment of the present invention;
fig. 6 is a process diagram of an electromagnetic wave shield coating method according to a third embodiment of the present invention.
Fig. 7 is a characteristic comparison table of the step coverage of the coating film in the electromagnetic shield forming step.
Detailed Description
Hereinafter, an electromagnetic wave shielding coating method according to a first embodiment of the present invention will be described in detail with reference to the drawings.
Fig. 1 is a sequence of steps of an electromagnetic wave shield coating method according to a first embodiment of the present invention, fig. 2 is a process diagram of fig. 1 in steps, and fig. 3 is an enlarged view of a receiving groove shown in fig. 2.
As shown in fig. 1, the electromagnetic wave shield coating method of the first embodiment includes a loading step S10, a dipping step S20, a flattening step S30, a firing step S40, and an unloading step S50.
In the present embodiment, the respective steps are performed while the carrier 10 is being moved laterally, as an example.
In the loading step S10, as shown in fig. 2 a, the mounting surface (PCB surface) of the electronic component D is brought into close contact with the attaching portion 11 of the transport carrier 10, and then pressure is applied to attach the electronic component D to the attaching portion 11 of the transport carrier 10. In addition, a surface treatment step for imparting hydrophilicity to the outer surface of the electronic component D may be performed, in which hydrophilicity is imparted to the surface of the electronic component D by the surface treatment with the plasma P, so that the adhesion of the metal ink M can be increased.
In the dipping step S20, as shown in fig. 2 (b) and (c), the carrier 10 is moved to the upper region of the storage tank 20 containing the metal ink M, and the electronic component D attached to the attaching portion 11 of the carrier 10 is lowered toward the storage tank 20 in the lower region of the carrier 10, so that the electronic component D is dipped in the metal ink M.
Here, since the electromagnetic wave shielding is performed only in the necessary shielding region of the electronic component D, specifically, the emc (epoxy Molding compound) portion other than the mounting surface of the electronic component D attached to the attachment portion 11 needs to be shielded, only the top surface and the side surface of the electronic component D can be immersed in the metallic ink M to form an electromagnetic wave shielding film having a uniform thickness in a state where the water level D2 of the metallic ink M stored in the storage tank 20 is set to be lower than the height D1 of the side surface of the electronic component D, as shown in fig. 2 (b).
As described above, it is most important to form the electromagnetic wave shielding film only on the necessary shielding region except for the mounting surface in the entire surface of the electronic component D, and the known techniques such as the sputtering method and the spraying method are not easy to form a uniform electromagnetic wave shielding film on the side surface of the electronic component D to be shielded, and an additional masking process for protecting the mounting surface is required, and an additional process for preventing cracks of the electromagnetic wave shielding film is required during the unloading process.
However, in the present embodiment, the mounting surface of the electronic component D is inverted so that the surface opposite to the mounting surface (upper surface) faces the storage tub 20 in a state where the mounting surface is in close contact with the joining portion 11 of the carrier 10, and then the electronic component D is immersed, so that the metal ink M can be applied only to the necessary shielding region. In particular, in the present embodiment, since the mounting surface of the electronic component D, which has been a problem in the conventional art, is attached to the attaching portion 11 of the carrier 10 without being exposed, it is possible to prevent the metal ink M from being applied to the mounting surface, and to coat the metal ink M together with the side surface of the electronic component D, so that it is possible to provide an integrated electromagnetic wave shielding film having a uniform thickness. Therefore, the electromagnetic wave shielding film is not formed in the necessary or more region as in the conventional art, and therefore, an additional process for removing the electromagnetic wave shielding film formed in the necessary or more region is not required, and the mounting surface of the electronic component D can be prevented from being contaminated with the metal for forming the electromagnetic wave shielding film without causing cracks in the electromagnetic wave protective layer which may be generated in such a removal process.
As shown in fig. 3, the housing tank 20 is preferably provided with a water level adjusting device inside the housing tank 20, because the housing tank 20 should maintain the water level of the metal ink M required for immersing the electronic component D. More specifically, it is preferable that the water level D2 of the metal ink M stored in the storage tank 20 is equal to or lower than the height D1 of the side surface of the electronic component D, and the water level of the metal ink M is adjustable according to the specification of the electronic component D. In order to accurately adjust the water level of the metal ink M in the storage tank 20, it is preferable to provide a water level sensor 21 to maintain a predetermined water level by replenishing the metal ink M in a predetermined amount according to the amount of the metal ink M used, and a laser system, an ultrasonic system, a magnetostrictive (magnetic distortion) system, a frequency system, and a floating sensor can be used as the water level sensor 21 to be used. In addition to such a sensor, various types of sensors capable of detecting the water level of the metal ink M in the storage tank 20 may be used.
In order to control the uniformity of the electromagnetic wave shielding film more precisely together with the water level adjustment of the storage tank 20, at least one of the height adjusting device of the electronic component D and the height adjusting device of the storage tank 20 is preferably provided at the time of immersion.
As the supply device 22 for supplying the metallic ink M, a diaphragm pump, a tube pump, a piston pump, and a gear pump may be used, and various types of pumps capable of discharging the metallic ink M in a fixed amount may be used. When the metal ink M stored in the receiving groove 20 overflows (overflow), the water level of the metal ink M may be sensed by the water level sensor 21, and the interval between the receiving groove 20 and the electronic component D may be adjusted, or the height of the sidewall of the receiving groove 20 may be adjusted to be lower than the height of the side of the electronic component D, thereby discharging the excessive metal ink M. The excess metal ink M discharged at this time can be stored in the tank 23 and then supplied to the storage tank 20 again by the supply device 22.
The metal ink M used in the dipping step S20 can be any metal ink M containing a conductive metal, and for example, any metal ink M containing conductive metal particles or any particle-free metal ink M can be used, but the metal ink M is not limited thereto.
The metal ink M can be applied in various ways as long as it is a metal having conductivity, and for example, a silver ink containing silver (Ag) can be used. Among metals, silver is a metal capable of providing an excellent electromagnetic wave shielding effect, and thus silver ink is preferably used, but not necessarily limited thereto. In addition to the mixture thereof, a solvent, a stabilizer, a dispersant, a binder resin, a crosslinking agent, a reducing agent, a surfactant, a wetting agent, a thixotropic agent, or an additive such as a leveling agent, a thickener, an antifoaming agent, etc. may be included according to need.
The viscosity of the metallic ink M composition of the present invention is preferably 1 to 50000cPs, and more preferably 5 to 400 cPs. When the viscosity is too low, it is difficult to form a uniform electromagnetic wave shielding film on the upper surface and the side surface of the electronic component D due to increased fluidity, and when the viscosity is too high, the thickness of the electromagnetic wave shielding film is not uniform due to too low fluidity, and sufficient firing cannot be achieved, thereby causing problems in conductivity, adhesion characteristics, and appearance.
In addition, in order to obtain a uniform electromagnetic wave shielding film on the upper surface, the side surface, and the bent portion of the electronic component D, the surface tension of the metal ink M may be adjusted. The maximum value of the surface tension of the metal ink M is preferably 35dyn/cm, and more preferably 30dyn/cm or less. When the surface tension of the metal ink M is high, the ink may be concentrated on the upper surface and the side surface due to the wettability of the metal ink M to the surface of the electronic component D, and the coating may be thin on the bent portion, so that the bent portion may be exposed after firing. Such a defect can be eliminated by repeating the dipping step S20, but it is a matter of course to reduce the number of dipping steps S20 as much as possible in terms of production efficiency.
In order to exhibit the shielding properties of the electromagnetic wave shielding film, the maximum value of the electrical properties of the electromagnetic wave shielding film formed from the metallic ink M of the present embodiment is preferably 800 Ω/□. When the conductivity is low, the thickness of the electromagnetic wave shielding film becomes thick in order to secure desired electromagnetic wave shielding characteristics, and therefore, it may be disadvantageous to make the electronic component D light, thin, and small.
After the sufficient immersion is completed, as shown in fig. 2 (c), the electronic component D is moved upward from the housing tank 20, and the electronic component D is taken out from the metal ink M in the housing tank 20.
By such an impregnation step S20, the metal ink M can be coated on the upper face and the side face of the portion that requires electromagnetic wave shielding in the entire surface of the electronic component D. In addition, when the water level of the metal ink M stored in the storage tank 20 is set according to the height of the electromagnetic wave shielding film, and the electronic component D is immersed in the bottom surface of the storage tank 20 and then taken out, there is an advantage that the electromagnetic wave shielding film can be uniformly formed only up to the height of the side surface of the electronic component D requiring electromagnetic wave shielding.
In the leveling step S30, as shown in fig. 2 (D), in order to prevent the concentration of the metal ink M applied to the surface of the electronic component D, the metal ink M may be removed from the surface of the electronic component D to planarize the metal ink M. For example, when the blade 30 and the electronic component D are relatively moved in a state where the blade 30 made of a material having a predetermined hardness is disposed at a predetermined distance from the upper surface of the electronic component D, the blade 30 can scrape off the metal ink M excessively applied to the electronic component D and planarize the metal ink M. In addition, the blade 30, which is made of an absorbent material such as a porous material, may absorb a certain amount of the metal ink M excessively applied to the electronic component D to prevent the concentration of the metal ink M. As the absorbent material such as a porous material, for example, sponge, EVA foam and urethane foam can be used, and besides, various porous absorbent materials can be used.
In the firing step S40, the electronic component D is heated and fired in a state where the metal ink M is applied to the surface of the electronic component D.
The present firing step S40 may include a primary firing step and a secondary firing step, the primary firing being a preliminary firing under different conditions depending on the type of the electronic component D and the environment in which it is used, but as shown in fig. 2 (D) and (e), the electronic component D coated with the metallic ink M may be subjected to a preliminary firing at 80 ℃ for one minute while supplying thermal energy to the electronic component D by the primary heater 41. The primary purpose of the primary firing step is to maintain uniformity before the secondary firing step by minimizing or eliminating the fluidity of the metallic ink M uniformly applied to the surface of the electronic component D. In the secondary firing step, firing at 150 ℃ for five minutes may be performed by the secondary heater 42, but the firing conditions are not limited thereto.
As shown in fig. 2 (f), the unloading step S50 is a step for separating the electronic component D from the attaching part 11 of the carrier 10, and the electromagnetic wave shielding film formed by coating and baking the metal ink M is formed only on a part of the upper surface and the side surface of the separated electronic component D.
In addition, the attaching portion 11 used in the present embodiment preferably maintains the attaching force while performing the dipping step S20, and loses the attaching force or has a weak attaching force before proceeding to the unloading step S50. In the unloading step S50, since the contamination of the mounting surface of the electronic component D causes product failure, it is needless to say that the adhering substance is never transferred from the adhering portion 11. In order to lose the adhesion force of the electronic component D, an Ultraviolet (UV) curing tape may be used, or more preferably, a foam tape may be used, and a tape capable of selectively losing the adhesion force may also be used. After the electronic component D is attached to the tape and the electromagnetic wave shielding film is formed by the metal ink M, the attachment force before and after the dipping step S20 does not change as long as the attachment portion 11 maintains the attachment force that does not cause difficulty in the process of separating from the attachment portion 11.
As shown in fig. 4, when the metal ink M stored in the storage tank 20 is immersed in the electronic component D with the water level D2 set to be equal to the height D1 of the side surface of the electronic component D, it is preferable to selectively perform the hydrophobic treatment on the surface of the attached portion 11. As described above, by utilizing the difference in characteristics between the surface of the electronic component D after the hydrophilic treatment and the surface of the bonded portion 11 after the hydrophobic treatment, the electromagnetic wave shielding film can be formed without the metal ink M permeating between the mounting portion of the electronic component D and the bonded portion 11. The adhesive portion 11 may contain a hydrophobic substance such as polytetrafluoroethylene or silicone for imparting hydrophobicity, or may be surface-treated with such a substance, or may be formed of fine projections of nanometer size (nano-meter size).
As such, with the present embodiment, the electromagnetic wave-shielding film can be formed on the upper surface and the side surfaces of the electronic component D by immersing the surface of the electronic component D in the metal ink M, and thus an excellent electromagnetic wave-shielding effect can be provided through a simplified process.
If necessary, a protective coating layer may be formed on the electromagnetic wave-shielding film in order to protect the formed electromagnetic wave-shielding film from the external environment. The protective coating layer is preferably made of a polymer resin such as a thermosetting resin or a UV-curable resin. In order to improve the recognition rate or the appearance quality in the semiconductor inspection process, a color (color) may be further added, and when silver (Ag) is used as a metal material of the electromagnetic wave-shielding film, a thiol (thiol) compound or a carboxylic acid (carboxylic acid) compound or a silane (silane) compound may be included in the composition of the protective coating layer. The formation method of the protective coating layer preferably includes a step of coating and curing by a dipping step, as in the metal ink M.
Therefore, according to the present embodiment, the electromagnetic wave shielding film is formed on the surface of the electronic component D by immersing the surface of the electronic component D in the metal ink M, and the protective coating layer is formed as necessary, thereby being capable of providing an excellent electromagnetic wave shielding effect through a simplified process.
Next, an electromagnetic wave shielding coating method according to a second embodiment of the present invention will be described with reference to the drawings.
Fig. 5 is a process diagram of an electromagnetic wave shield coating method according to a second embodiment of the present invention.
As shown in fig. 5, the electromagnetic wave shielding coating method of the second embodiment is different from the first embodiment in that impregnation is indirectly performed using an impregnation roller 24 having a porous absorption structure.
The carrier 10 is formed of a roll-shaped rolled carrier film having a bonding portion on one surface, and the loading step S10, the dipping step S20, the firing step S40, and the unloading step S50 are sequentially performed during roll-to-roll (roll-to-roll) conveyance, which is advantageous for a continuous process.
Specifically, in the loading step S10, the electronic component D is attached by applying pressure to the carrier 10 after it is closely attached to the mounting surface thereof.
The electronic component D attached to the conveying carrier 10 by the loading step S10 moves on a roll-to-roll line (line), and moves to the dipping step S20. In the impregnation step S20, the electronic component D attached to the conveying carrier 10 is brought into contact with the impregnation roller 24. At this time, the dip roller 24 is formed of a porous absorption structure, and in a state where the metal ink M is dipped in the metal ink M in the housing tub 20 in advance and sufficiently contains the metal ink M, the metal ink M can be simultaneously coated on the upper surface and the side surface of the electronic component D requiring electromagnetic wave shielding by the dip roller 24 rotating in the upper region of the housing tub 20. At this time, the material of the dip roller 24 is preferably urethane foam, silicone foam or foam rubber, but in addition to this, it is of course possible to use a material which easily realizes the transfer of the metal ink M and has a coefficient of elasticity necessary for coating the metal ink M on the upper surface and the side surface of the electronic component D. Further, the interval between the impregnation roller 24 and the electronic component D may be adjusted according to the specification of the electronic component D, and for this purpose, a roller supporting the opposite surface of the transport carrier 10 in the upper region of the impregnation roller 24 may be configured to be capable of up-down position adjustment.
The electronic component D coated with the metal ink M is subjected to the next step of firing step S40 by roll-to-roll processing. In the firing step S40, pre-firing and final firing may be performed by the primary heater 41 and the secondary heater 42, and when the metal ink M is completely cured in the firing step S40, an electromagnetic wave shielding film is formed on the upper surface and the side surface of the electronic component D, and then the electronic component D is separated from the carrier 10 in the unloading step S50.
In addition, when the impregnation is indirectly performed using the impregnation roller 24 as in the second embodiment, the coating amount of the metal ink M coated on the surface of the electronic component D can be controlled by the absorptivity of the impregnation roller 24, and thus the leveling step for removing a part of the metal ink M excessively coated on the surface of the electronic component D in the first embodiment can be omitted.
Next, an electromagnetic wave shielding coating method according to a third embodiment of the present invention will be described in detail with reference to the drawings.
As shown in fig. 6, the electromagnetic wave shielding coating method of the third embodiment is different from the first embodiment and is constituted by a roll-to-roll process.
Therefore, the carrier 10 is formed of a roll-shaped rolled carrier film having a bonding portion on one surface, and the loading step S10, the surface treatment step, the dipping step S20, the leveling step S30, the firing step S40, and the unloading step S50 are sequentially performed during roll-to-roll conveyance, which is advantageous for a continuous process.
As shown in fig. 6, the electronic component D attached to the conveying carrier 10 by the loading step S10 moves on the roll-to-roll line, and moves to the dipping step S20. In the dipping step S20, the opposite surface of the carrier 10 to which the electronic component D is attached is pressed by the pressing roller 25 and dipped in the metal ink M in the storage tank 20.
At this time, since the entry angle of the electronic component D into the housing tub 20 is adjusted by angle rollers (angle rollers) disposed at both sides of the pressure roller 25, the uniformity of the metal ink M applied to the electronic component D during the dipping process can be maximized. Here, when the entering angle of the electronic component D is too large than a horizontal level, the side surfaces of the portion first in contact with the bottom of the housing groove 20 and the portion later in contact with the bottom may be coated to a high degree when the electronic component D enters, and when the entering angle is too small, only a part of the side surface of the electronic component D may be coated, and it may be difficult to form an electromagnetic wave shielding film of a necessary portion.
Thereafter, the electronic component D conveyed by the roll-to-roll method is separated from the section pressed toward the housing tank 20 by the pressing roller 25, and is taken out from the metal ink M in the housing tank 20. In this case, since the storage tub 20 should maintain a predetermined water level as described above, a water level adjusting means such as the water level sensor 21 is preferably provided in the storage tub 20. Further, since the housing tank 20 may be further provided with a vibration device for providing ultrasonic vibration, the dipping efficiency may be improved, and the fluidity of the metal ink M may be controlled by disposing the unevenness on the bottom of the housing tank 20, thereby improving the coating property. That is, when it is difficult to achieve uniform coating due to high fluidity of the metal ink M, the flow resistance of the metal ink M can be adjusted by the unevenness of the preliminary housing groove 20 in addition to adjusting the viscosity of the metal ink M, thereby guiding uniform coating.
Through such an impregnation step S20, the metal ink M is coated on the upper face and the side face exposed to the outside and requiring electromagnetic wave shielding in the entire surface of the electronic component D.
The electronic component D is taken out from the storage tub 20 by the continuous process of the roll-to-roll conveying method, and then the electronic component D is moved by the roll-to-roll line and then the process proceeds to the leveling step S30.
In the leveling step S30, in order to prevent a concentration phenomenon of the metallic ink M applied on the surface of the electronic component D in a continuous process in which the electronic component D moves on a roll-to-roll line, a leveling (leveling) operation is performed, which scrapes off the metallic ink M excessively applied on the surface of the electronic component D by the blade 30 so as to level it.
Here, although the leveling is performed by the bar-shaped blade 30 spaced apart from the electronic component D by a predetermined interval, another device capable of performing the leveling by removing a part of the excessively applied metal ink M may be used, and as another example, the blade 30 is formed of a porous absorbing material and absorbs a predetermined amount of the metal ink M concentrated on the surface of the electronic component D, thereby preventing the ink concentration phenomenon.
After the leveling step S30 is completed, the next step, i.e., the firing step S40, is performed by roll-to-roll processing. In the firing step S40, pre-firing and final firing may be performed by the primary heater 41 and the secondary heater 42, and if the metal ink M is completely cured by such firing step S40, the electromagnetic wave shielding film is formed on the upper surface and the side surface of the electronic component D, and then the electronic component D on which the electromagnetic wave shielding film is formed is separated from the carrier 10 by the unloading step S50.
In this way, the present invention forms the electromagnetic wave shielding film by immersing the surface of the electronic component D in the metal ink, and thus can provide an excellent electromagnetic wave shielding effect through a simplified process.
The structure and effects of the present invention will be described in more detail below with reference to examples. These examples are merely illustrative of the present invention, and the scope of the present invention is not limited to these examples.
< detection of physical Properties >
Detecting the surface resistance of the ink coating surface by adopting a surface resistance detector (a four-Probe, 4-Point Probe); for viscosity, 0.5ml of ink was taken and tested using a Brookfield viscometer at 20rpm at 25 ℃; the surface tension was measured by K20(Easy dyne) of KRUSS.
The dispersed particle size was measured by diluting 10% of the ink in butyl carbitol solvent using a dynamic light scattering instrument (dynamic light scattering).
The coating thickness is detected by using an FE-SEM; the electromagnetic wave shielding test was carried out using an electromagnetic wave material shielding performance tester (S21Parameter, ASTM D4935).
< preparation of ink for electromagnetic wave Shielding coating >
Production example 1 production of particle-free silver ink
A particle-free silver ink having a viscosity of 5cps, a surface tension of 23dyne/cm and an area resistance of 650 m.OMEGA./□ was prepared by mixing silver 2-ethylhexyl carbamate (100g) with a solvent (100g butanol, 50g isobutylamine), a dispersant (BYK 145145, 1g), a binder resin (epoxy, 0.5g), a wetting agent (antistera 204, 0.2g) and a leveling agent (EFKA 350, 0.05 g).
Production example 2 production of particle-free metallic ink
A particle-free silver ink having a viscosity of 38cps, a surface tension of 29dyne/cm and an area resistance of 300 m.OMEGA./□ was prepared by mixing 100g of silver 2-ethylhexyl carbamate with a solvent (anisole 20g, 2-ethylhexylamine 40g), a dispersant (BYK 145, 0.5g), a binder resin (epoxy resin, 0.3g), a wetting agent (antitera 204, 0.2g) and a leveling agent (EFKA 350, 0.05 g).
Production example 3 production of nanoparticle dispersed Metal ink
Silver nanoparticles 40g, solvent (butyl carbitol, 60g), dispersant (BYK 145, 4g), stabilizer (ethyl cellulose, 2g) and binder resin (cellulose acetate butyrate, 1g) were mixed in a 500ml reactor and uniformly mixed and reacted for six hours using 0.3mm beads (Beeds).
After the reaction was completed, the beads were removed by a filter to obtain an ink in which silver nanoparticles were uniformly dispersed, and an ink having a viscosity of 50cps, a surface tension of 26dyne/cm and an area resistance of 90 m.OMEGA./□ was prepared.
Production example 4 production of nanoparticle dispersed Metal ink
Silver nanoparticles (40g), a solvent (propylene glycol methyl ether acetate, 50g), a dispersant (BYK 330, 5g), a stabilizer (ethyl cellulose, 2g) and a binder resin (polyvinyl butyral, 1g) were mixed in a 500ml reactor, and the mixing and reaction were uniformly performed for six hours using 0.3mm beads. After the reaction was completed, the beads were removed by a filter to obtain an ink in which silver nanoparticles were uniformly dispersed, and an ink having a viscosity of 400cps, a surface tension of 35dyne/cm and an area resistance of 50 m.OMEGA./□ was prepared.
[ preparation example 5] preparation of paste Metal ink
After mixing silver powder (40g), an adhesive resin (epoxy resin, 10g), an adhesion promoter (BYK 4510, 0.3g), a thixotropic agent (fumed silica, 0.05g) and a solvent (butyl carbitol, 0.5g), mixing was performed using a three-roll mill to prepare a paste ink having a viscosity of 50000cps and a sheet resistance of 60m Ω/□.
< coating Process for electromagnetic wave Shielding >
[ example 1]
An electromagnetic wave shielding film was formed using the particle-free metal ink having a viscosity of 5cps of [ preparation example 1], on five surfaces of six surfaces of the semiconductor package except for the bottom surface through the vertical dipping process of the first example, and then, firing was performed at 150 ℃ for 5 minutes.
The sheet resistance of the thus-formed shielding film was 700m Ω/□, the step coverage was 93%, and the shielding rate was 32 dB.
[ example 2]
An electromagnetic wave shielding film was formed by coating five surfaces of six surfaces of a semiconductor package except for a bottom surface through the vertical dipping process of the first example using the particle-free metal ink having a viscosity of 38cps of [ preparation example 2], then pre-firing at 80 ℃ for 1 minute, and final firing at 150 ℃ for 5 minutes.
The sheet resistance of the thus-formed shielding film was 350 m.OMEGA./□, the step coverage was 95%, and the shielding rate was 42 dB.
[ example 3]
An electromagnetic wave shielding film was formed using the nanoparticle dispersion type metal ink having a viscosity of 50cps of [ preparation example 3], on five surfaces of six surfaces of the semiconductor package except for the bottom surface through the vertical dipping process of the first example, and then, firing was performed at 130 ℃ for 10 minutes.
The sheet resistance of the thus-formed shielding film was 100 m.OMEGA./□, the step coverage was 94%, and the shielding rate was 50 dB.
[ example 4]
An electromagnetic wave shielding film was formed using the silver nanoparticle dispersion type metal ink having a viscosity of 400cps of [ preparation example 4], on five surfaces of six surfaces of the semiconductor package except for the bottom surface through the vertical dipping process of the first example, and then firing was performed at 130 ℃ for 15 minutes.
The sheet resistance of the thus-formed shielding film was 55 m.OMEGA./□, the step coverage was 95%, and the shielding rate was 61 dB.
[ example 5]
An electromagnetic wave shielding film was formed by coating five surfaces except for the bottom surface of six surfaces of a semiconductor package through the vertical dipping process of the first example using a silver paste-like metal ink having a viscosity of 50000cps of [ preparation example 5], and then firing at 130 ℃ for 20 minutes.
The sheet resistance of the thus-formed shielding film was 65 m.OMEGA./□, the step coverage was 95%, and the shielding rate was 57 dB.
[ example 6]
An electromagnetic wave shielding film was formed by using the particle-free metal ink having a viscosity of 5cps as in [ preparation example 1] and coating five surfaces of six surfaces of the semiconductor package except for the bottom surface through the indirect immersion process of the second example, and then pre-firing at 80 ℃ for 1 minute and final firing at 150 ℃ for 5 minutes.
The sheet resistance of the thus-formed shielding film was 750 m.OMEGA./□, the step coverage was 90%, and the shielding rate was 30 dB.
[ example 7]
An electromagnetic wave shielding film was formed using the particle-free metal ink having a viscosity of 38cps of [ preparation example 2], on five surfaces of six surfaces of the semiconductor package except for the bottom surface through the indirect dipping process of the second example, and then firing was performed at 150 ℃ for 5 minutes.
The sheet resistance of the thus-formed shielding film was 400 m.OMEGA./□, the step coverage was 92%, and the shielding rate was 40 dB.
[ example 8]
An electromagnetic wave shielding film was formed using the nanoparticle dispersion type metal ink having a viscosity of 50cps of [ preparation example 3], on five surfaces of six surfaces of the semiconductor package except for the bottom surface through the indirect dipping process of the second example, and then firing was performed at 130 ℃ for 10 minutes.
The sheet resistance of the thus-formed shielding film was 150 m.OMEGA./□, the step coverage was 91%, and the shielding rate was 48 dB.
[ example 9]
An electromagnetic wave shielding film was formed using the silver nanoparticle dispersion type metal ink having a viscosity of 400cps of [ preparation example 4], on five surfaces of six surfaces of the semiconductor package except for the bottom surface through the indirect dipping process of the second example, and then firing was performed at 130 ℃ for 15 minutes.
The sheet resistance of the thus-formed shielding film was 57 m.OMEGA./□, the step coverage was 93%, and the shielding rate was 61 dB.
[ example 10]
An electromagnetic wave shielding film was formed by coating five surfaces except for the bottom surface of six surfaces of the semiconductor package through the indirect dipping process of the second example using the silver paste metal ink having a viscosity of 50000cps of [ preparation example 5], and then firing at 130 ℃ for 20 minutes.
The sheet resistance of the thus-formed shielding film was 70 m.OMEGA./□, the step coverage was 92%, and the shielding rate was 56 dB.
[ example 11]
An electromagnetic wave shielding film was formed by coating five surfaces except for the bottom surface of six surfaces of a semiconductor package through the roll-to-roll dipping process of the third example using the particle-free metal ink having a viscosity of 5cps of [ preparation example 1], and then firing at 150 ℃ for 5 minutes.
The sheet resistance of the thus-formed shielding film was 650 m.OMEGA./□, the step coverage was 95%, and the shielding rate was 34 dB.
[ example 12]
An electromagnetic wave shielding film was formed by coating five surfaces of six surfaces of a semiconductor package except for a bottom surface through a roll-to-roll dipping process of the third example using the particle-free metal ink having a viscosity of 38cps of [ preparation example 2], then pre-firing at 80 ℃ for 1 minute, and finally firing at 150 ℃ for 5 minutes.
The sheet resistance of the thus-formed shielding film was 300 m.OMEGA./□, the step coverage was 96%, and the shielding rate was 43 dB.
[ example 13]
An electromagnetic wave shielding film was formed by coating five surfaces except for the bottom surface of six surfaces of a semiconductor package through the roll-to-roll dipping process of the third example using the nanoparticle dispersion type metal ink having a viscosity of 50cps of [ preparation example 3], and then firing at 130 ℃ for 10 minutes.
The sheet resistance of the thus-formed shielding film was 90 m.OMEGA./□, the step coverage was 97%, and the shielding rate was 52 dB.
[ example 14]
An electromagnetic wave shielding film was formed by coating five surfaces except for the bottom surface of six surfaces of a semiconductor package through the roll-to-roll dipping process of the third example using the silver nanoparticle dispersion type metal ink having a viscosity of 400cps of [ preparation example 4], and then firing at 130 ℃ for 15 minutes.
The sheet resistance of the thus-formed shielding film was 50 m.OMEGA./□, the step coverage was 96%, and the shielding rate was 65 dB.
[ example 15]
An electromagnetic wave shielding film was formed by coating five surfaces except for the bottom surface of six surfaces of a semiconductor package through the roll-to-roll dipping process of the third example using the silver paste metal ink having a viscosity of 50000cps of [ preparation example 5], and then firing at 130 ℃ for 20 minutes.
The sheet resistance of the thus-formed shielding film was 60m Ω/□, the step coverage was 96%, and the shielding rate was 59 dB.
< electromagnetic wave shielding film protective coating >
[ example 19]
A protective coating layer, which is formed by coating five surfaces except for the bottom surface of six surfaces of the semiconductor package with a thermosetting resin through the roll-to-roll impregnation process of the third example, and then firing at 180 ℃ for 10 minutes, is formed on the upper layer of the electromagnetic wave-shielding film prepared in [ example ].
[ example 20]
In the upper layer of the electromagnetic wave-shielding film prepared in [ example ], a protective coating layer was formed by coating five surfaces of six surfaces of the semiconductor package except for the bottom surface with an ultraviolet-curable resin through the roll-to-roll impregnation process of the third example, and then performing ultraviolet curing.
< comparative example of electromagnetic wave shield coating Process >
Comparative example 1/sputtering Process
A film was formed using a metal sintered body as a sputtering target by using a dc magnetron sputtering apparatus as a sputtering apparatus. The annealing was performed under film forming conditions of room temperature, direct current 500W and oxygen concentration 6%, and under annealing conditions of 300 ℃ for 1 hour in an atmospheric atmosphere. The sputtering angle was adjusted so that the remaining five surfaces except the surface having the solder ball could be subjected to coating treatment to sputter the target module on the upper and side surfaces to form a shielding film of an SUS/CU/SUS multilayer structure.
The step coverage of the thus-formed shielding film was 41%.
Comparative example 2 injection step
The nanoparticle dispersion type ink having a viscosity of 50cps of [ preparation example 3] was spray-coated on the upper side and the side surface of the semiconductor package using a spray apparatus (787MS-SS valve), respectively, and then fired at 130 ℃ for 10 minutes to form an electromagnetic wave shielding film.
The step coverage of the thus-formed shielding film was 47%.
< results of measuring physical Properties >
The characteristics of the prepared electromagnetic wave-shielding ink are as follows in table 1.
[ TABLE 1]
The characteristics of the electromagnetic wave-shielding films formed according to the respective electromagnetic wave-shielding impregnation processes, which were prepared in the examples, are shown in table 2.
[ TABLE 2]
Physical properties of electromagnetic wave shielding film according to dipping process and ink type
[ TABLE 3]
Comparison of characteristics of step coverage of coating film in electromagnetic wave shield formation step
The scope of the claims of the present invention is not limited to the above-described embodiments, but may be embodied in various forms within the scope of the appended claims. Various modifications to the present invention can be made by those skilled in the art without departing from the spirit of the present invention claimed in the claims.
Claims (12)
1. An electromagnetic wave shielding coating method comprising:
a loading step of attaching one surface of the electronic component to a transport carrier;
an immersion step of immersing the electronic component attached to the transport carrier in a housing tank housing a metal ink, thereby coating the metal ink on an upper surface and a side surface of the electronic component;
a firing step of curing the metal ink coated on the electronic component; and
an unloading step of separating the electronic component from the transport carrier;
wherein the impregnating step comprises the steps of:
turning over the electronic component attached to the transport carrier so that an opposite surface of a mounting surface of the electronic component faces the housing groove;
moving the transport carrier to an area above the metallic ink; and
dipping only the upper face and the side faces of the electronic component attached to the transport carrier by moving the transport carrier downward toward the housing tub so that the mounting face of the electronic component is excluded, only the upper face and the side faces of the electronic component being coated with the metal ink,
wherein a height (d2) of the metal ink in the housing groove is set to be lower than a height (d1) of the side surface of the electronic component.
2. The electromagnetic wave shield coating method as claimed in claim 1,
a surface treatment step of imparting hydrophilicity to the exposed surface of the electronic component is further performed before the impregnation step.
3. The electromagnetic wave shield coating method according to claim 2,
and performing plasma treatment on the surface of the electronic component in the surface treatment step.
4. The electromagnetic wave shield coating method according to claim 2,
the electronic component attachment surface of the transport carrier has a hydrophobic property.
5. The electromagnetic wave shield coating method as claimed in claim 1,
before the firing step, a leveling step of homogenizing a coating thickness of the metallic ink coated on the surface of the electronic component is further performed.
6. The electromagnetic wave shield coating method as claimed in claim 5,
in the leveling step, the metallic ink excessively applied on the surface of the electronic component in the dipping step is scraped off with a blade to be leveled into a flat shape.
7. The electromagnetic wave shield coating method as claimed in claim 5,
in the leveling step, the metallic ink excessively applied on the surface of the electronic component in the dipping step is absorbed with a blade made of an absorbing material, thereby leveling to be flat.
8. The electromagnetic wave shield coating method as claimed in claim 1,
in the impregnation step, the impregnation depth of the electronic component is controlled in accordance with the specification of the electronic component attached to the transport carrier.
9. The electromagnetic wave shield coating method as claimed in claim 8,
the water level of the metal ink is adjusted to be the same as or lower than the thickness of the electronic component by the accommodating groove.
10. The electromagnetic wave shield coating method as claimed in claim 1,
the carrier is formed of a carrier film which is transported in a roll-to-roll manner, and a bonding portion is provided on one side surface of the carrier film, and one surface of the electronic component can be attached to the bonding portion.
11. The electromagnetic wave shield coating method as claimed in claim 10,
in the dipping step, the opposite surface of the carrier to which the electronic component is attached is pressed against the holding tank by a dipping roller controlled to be lifted and lowered on the upper side of the holding tank, thereby controlling the dipping depth of the electronic component.
12. The electromagnetic wave shield coating method as claimed in claim 10,
in the dipping step, the dipping roller for absorbing the metal ink in the accommodating groove rotates, and the metal ink is coated on the outer surface of the electronic component moving on the upper side of the dipping roller.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2017-0015770 | 2017-02-03 | ||
| KR20170015770 | 2017-02-03 | ||
| KR1020170051819A KR102044773B1 (en) | 2017-02-03 | 2017-04-21 | electromagnetic wave shield coating method |
| KR10-2017-0051819 | 2017-04-21 | ||
| PCT/KR2018/001441 WO2018143718A1 (en) | 2017-02-03 | 2018-02-02 | Method for forming coating that blocks electromagnetic waves |
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| Publication Number | Publication Date |
|---|---|
| CN110769944A CN110769944A (en) | 2020-02-07 |
| CN110769944B true CN110769944B (en) | 2022-03-25 |
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| CN201880023840.6A Active CN110769944B (en) | 2017-02-03 | 2018-02-02 | Electromagnetic wave shielding coating method |
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| CN (1) | CN110769944B (en) |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1481448A (en) * | 2001-03-06 | 2004-03-10 | О | Plating method of metal film on surface of polymer |
| JP2004200599A (en) * | 2002-12-20 | 2004-07-15 | Tokai Rubber Ind Ltd | Manufacturing method for transparent electromagnetic shield film for plasma-display, and transparent electromagnetic shield film for plasma-display obtained thereby |
| CN105658043A (en) * | 2014-11-10 | 2016-06-08 | 东华大学 | Electromagnetic shielding film material and preparation method thereof |
Family Cites Families (6)
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|---|---|---|---|---|
| EP1156521A3 (en) * | 2000-04-24 | 2007-05-23 | Interuniversitair Microelektronica Centrum Vzw | Low cost electroless plating process for single chips and wafer parts and products obtained thereof |
| EP2752470A1 (en) * | 2006-08-07 | 2014-07-09 | Inktec Co., Ltd. | Process for preparation of silver nanoparticles, and the compositions of silver ink containing the same |
| CN101816223A (en) * | 2007-10-02 | 2010-08-25 | 派克汉尼芬公司 | Nano inks for imparting emi shielding to windows |
| KR101226086B1 (en) * | 2010-10-22 | 2013-01-24 | 한국과학기술원 | Pattern fabricating method and pattern transferring apparatus |
| KR101540583B1 (en) * | 2013-12-05 | 2015-07-31 | 에스피텍 주식회사 | Method of manufacturuing Electro-Magnetic Shielding Layer for semiconductor package |
| KR101666786B1 (en) * | 2014-11-21 | 2016-10-17 | (주) 씨앤아이테크놀로지 | Apparatus for Manufacturing Adhesive-Pad for EMI shielding of Semiconductor Packages and Method for Manufacturing Adhesive-Pad Using the Same |
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- 2018-02-02 WO PCT/KR2018/001441 patent/WO2018143718A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1481448A (en) * | 2001-03-06 | 2004-03-10 | О | Plating method of metal film on surface of polymer |
| JP2004200599A (en) * | 2002-12-20 | 2004-07-15 | Tokai Rubber Ind Ltd | Manufacturing method for transparent electromagnetic shield film for plasma-display, and transparent electromagnetic shield film for plasma-display obtained thereby |
| CN105658043A (en) * | 2014-11-10 | 2016-06-08 | 东华大学 | Electromagnetic shielding film material and preparation method thereof |
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| CN110769944A (en) | 2020-02-07 |
| WO2018143718A1 (en) | 2018-08-09 |
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