CN110765612A - Material S parameter measuring method based on de-embedding error - Google Patents

Material S parameter measuring method based on de-embedding error Download PDF

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CN110765612A
CN110765612A CN201911006657.8A CN201911006657A CN110765612A CN 110765612 A CN110765612 A CN 110765612A CN 201911006657 A CN201911006657 A CN 201911006657A CN 110765612 A CN110765612 A CN 110765612A
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clamp
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CN110765612B (en
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任杰
闻映红
王国栋
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Beijing Jiaotong University
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Abstract

The invention provides a method for measuring S parameter of material, which comprises establishing signal flow chart of measuring process, and determining state equation of embedding error; according to a signal flow chart of a measurement process, five state models of a port network in the material S parameter measurement system are constructed by changing a test sample; establishing a fixture S parameter state equation of the five state models, and determining fixture S parameters; and substituting the S parameter of the clamp into a state equation of the embedding error, and calculating to obtain the real S parameter of the material to be measured. Compared with the three states of the traditional TRL principle-based embedded error port network model, the invention provides five state models. Then, a state equation is established according to the five state models. In the analysis of the dual-port cascade network, the correlation equation of the S parameter is directly listed, the traditional S parameter and T parameter conversion method is not adopted, and the data processing is simpler and more visual.

Description

Material S parameter measuring method based on de-embedding error
Technical Field
The invention relates to the technical field of material S parameter measurement, in particular to a material S parameter measurement method based on de-embedding errors.
Background
The S parameter is an important parameter for representing the electromagnetic property of the material, and can provide an important theoretical basis for the analysis of a microwave system. The S parameter is called Scatter parameter, i.e. scattering parameter. The S parameter describes the frequency domain characteristic of the transmission channel, and when the serial link SI analysis is carried out, the accurate S parameter of the channel is an important link, and almost all the characteristics of the transmission channel can be seen through the S parameter. Most of the issues of signal integrity concern, such as signal reflections, crosstalk, and loss, can be found from the S-parameters to find useful information. The vector network analyzer is commonly used for measuring S parameters, and a clamp is required to be introduced between a material to be measured and a testing instrument for conversion. Due to the influence of the system and the fixture, system embedding errors and fixture embedding errors can be generated in the testing process. The system embedding error can be removed by a calibration method, and the removal of the fixture embedding error is complex and is always a hot spot of current research. Therefore, the fixture needs to be subjected to de-embedding error analysis, which is significant for improving the measurement accuracy of the S parameter of the material.
Disclosure of Invention
The present invention is directed to a method for measuring S-parameter of a material based on de-embedding error, so as to solve at least one of the problems in the related art.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a material S parameter measuring method based on de-embedding errors, which comprises the following steps:
step S110: establishing a signal flow chart of a measuring process, analyzing the reasons for the embedding errors of the clamp, and determining a state equation of the embedding errors;
step S120: according to a signal flow chart of a measurement process, five state models of a port network in the material S parameter measurement system are constructed by changing a test sample;
step S130: establishing a fixture S parameter state equation of the five state models, and determining fixture S parameters;
step S140: and substituting the S parameter of the clamp into the state equation of the embedding error, and calculating to obtain the real S parameter of the material to be measured.
Preferably, in step S110, the determined state equation of the embedding error is:
Figure BDA0002242975360000022
Figure BDA0002242975360000023
Figure BDA0002242975360000024
wherein, DeltaSM＝SM11×SM22-SM12×SM21，SMM11Reflection coefficient, SMM, representing the left port of the entire measurement system21Indicating the transmission coefficient of the entire measurement system from the left port to the right port, SMM12Indicating the transmission coefficient of the entire measurement system from the right port to the left port, SMM22Representing the reflection coefficient on the right side of the entire measurement system;
SM11representing the reflection coefficient, SM, of the left port of the material being measured21Representing the transmission coefficient, SM, of the material under test from the left port to the right port12Representing the transmission coefficient, SM, of the material under test from the right port to the left port22Representing the reflection coefficient of the right port of the measured material;
SL11denotes the reflection coefficient of the left clamp left port, SL21Representing the transmission coefficient, SL, of the left clamp from the left port to the right port12Representing the transmission coefficient, SL, of the left clamp from the right port to the left port22Representing the reflection coefficient of the right port of the left clamp;
SR11denotes the reflection coefficient, SR, of the left port of the right clamp21Representing the transmission coefficient, SR, of the right clamp from the left port to the right port12Representing the transmission coefficient, SR, of the right clamp from the right port to the left port22Representing the transmission coefficient of the right port of the left clamp.
Preferably, in step S120, the five state models of the port network are respectively:
the first state: the straight-through model is characterized in that a left clamp and a right clamp are directly connected;
and a second state: short-circuit model-only short-circuit element is included in the calibration element;
and a third state: adding a short circuit model to the left standard test piece;
and a fourth state: adding a short circuit model to the right standard test piece;
and a fifth state: and (4) standard test piece models.
Preferably, the state equation of the S parameter of the fixture in the state one is as follows:
Figure BDA0002242975360000031
Figure BDA0002242975360000032
Figure BDA0002242975360000033
Figure BDA0002242975360000034
in State one, SMM11、SMM21、SMM12、SMM22Are respectively marked as S1、S2、S3、S4。
Preferably, the state equation of the S parameter of the fixture in the second state is as follows:
Figure BDA0002242975360000035
in state two, SMM11、SMM22Are respectively marked as S5、S6。
Preferably, the state equation of the S parameter of the fixture in the state three is as follows:
Figure BDA0002242975360000037
wherein a represents the reflection coefficient of the calibration piece, and b represents the incidence coefficient of the calibration piece; state three, SMM11Is marked as S7。
Preferably, the state equation of the S parameter of the fixture in the state four is as follows:
in State four, SMM22Is marked as S8。
Preferably, the state equation of the S parameter of the fixture in the state five is as follows:
Figure BDA0002242975360000042
Figure BDA0002242975360000044
Figure BDA0002242975360000045
in State five, SMM11、SMM21、SMM12、SMM22Are respectively marked as S9、S10、S11、S12。
Preferably, the data S is utilized in conjunction with the signal flow diagram1、S2、S3、S4、S5、S6、S7、S8、S9、S10、S11And S12Calculate leftFixture S parameters and right fixture S parameters.
The invention has the beneficial effects that: compared with the three states of the traditional TRL principle-based embedded error port network model, the test fixture port network modeling provides five state models. Then, a state equation is established according to the five state models. In the analysis of the dual-port cascade network, the correlation equation of the S parameter is directly listed, the traditional S parameter and T parameter conversion method is not adopted, and the data processing is simpler and more visual.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a flowchart of a measurement process of a material S parameter based on de-embedding error according to an embodiment of the present invention.
Fig. 2 is a schematic block diagram of a material S parameter testing system according to an embodiment of the present invention.
Fig. 3 is a schematic view of an installation state of a measured member in the frankfurt coaxial device according to the embodiment of the present invention.
Fig. 4 is a flow chart of the preparation work before the test according to the embodiment of the present invention.
Fig. 5 is a flowchart illustrating S parameter testing of a material according to an embodiment of the present invention.
Fig. 6 is a signal flow diagram of a measurement process according to an embodiment of the present invention.
Detailed Description
The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
As used herein, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or modules, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, modules, and/or groups thereof.
It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
For the convenience of understanding of the embodiments of the present invention, the following description will be further explained by taking specific embodiments as examples with reference to the drawings, and the embodiments are not to be construed as limiting the embodiments of the present invention.
It will be understood by those of ordinary skill in the art that the figures are merely schematic representations of one embodiment and that the elements or devices in the figures are not necessarily required to practice the present invention.
Examples
As shown in fig. 1, an embodiment of the present invention provides a method for measuring S parameter of a material based on de-embedding error, including the following steps:
step S110: establishing a signal flow chart of a measuring process, analyzing the reasons for the embedding errors of the clamp, and determining a state equation of the embedding errors;
step S120: according to a signal flow chart of a measurement process, five state models of a port network in the material S parameter measurement system are constructed by changing a test sample;
step S130: establishing a fixture S parameter state equation of the five state models, and determining fixture S parameters;
step S140: and substituting the S parameter of the clamp into the state equation of the embedding error, and calculating to obtain the real S parameter of the material to be measured.
As shown in fig. 2, which is a diagram of a test system for actual measurement in the embodiment of the present invention, an E5061 bean vector network analyzer is selected as a test instrument, and Agilent E5061B is an ENA series network analyzer, which can meet the measurement requirements of a wide range of low-frequency to high-frequency electronic components and circuits. E5061B can now provide a new 5Hz to 3GHz frequency domain device analysis standard. A DR-S02 shielding effectiveness instrument is selected as the flange coaxial device. The core component of the DR-S02 plane material shielding effectiveness tester is a coaxial flange testing device (DRS01) completely specified according to ASTM4935 standard, and is combined with an exquisite structural design, so that the problem that the coaxial flange device is heavy and difficult to operate in testing is solved, meanwhile, the coaxial flange component which is processed with high precision has a very small standing-wave ratio and very low insertion loss in a testing frequency range, and the authenticity and accuracy of a testing result are effectively guaranteed.
In the test system, a sample is placed in a flange coaxial device, the flange coaxial device is connected with a vector network analyzer through a test cable, the system performs S parameter test and data acquisition, a test result is stored in the vector network analyzer, and data are derived by a U disk, so that the following data processing work is performed, including other work such as embedded error calculation, material dielectric constant and magnetic permeability calculation. By de-embedding error calculation, the S parameter of the sample port face will be obtained. The S parameter of the sample port face is converted into the dielectric constant and the magnetic permeability of the material through the NRW algorithm, and the dielectric constant and the magnetic permeability of the material are finally obtained.
As shown in fig. 3, which is a diagram of a frankfurt coaxial built-in sample in the embodiment of the present invention, when a test system is constructed by using a flange coaxial test fixture and a vector network analyzer, the test sample is annular and has a diameter of 6138 mm. For hard materials like teflon, a round test specimen can be made by machining; if the material to be tested is in the form of powder, the powder should be uniformly dispersed in the binder and then molded to form the test sample.
The sample should be an isotropic homogeneous medium. The test system has high requirements for sample preparation: the surface of the sample must be smooth and flat without burrs and scratches; the sample should fit tightly with the upper and lower surfaces of the coaxial fixture without gaps. In addition, for high-loss materials such as wave-absorbing materials, the thickness of the sample cannot be too large, and too large thickness easily causes too small or even zero transmission scattering parameter S21, so that the measurement error is too large, and an accurate measurement result cannot be obtained. The thickness of the sample is usually selected to be 2-5 mm.
Because the size of the material sample is small, and the processing precision directly influences the electromagnetic parameter testing result, the preparation of the sample is a key ring. In order to obtain the dielectric constant and magnetic permeability of the material as real as possible, the dielectric constant and magnetic permeability should be customized by manufacturers capable of meeting the processing precision of samples.
Fig. 4 and 5 show a working flow chart and an S parameter testing flow chart for the test process. The method comprises the steps of manufacturing a test sample, preheating a vector network analyzer, connecting a test system and a test fixture through a coaxial test cable, calibrating the vector network analyzer, and adopting the most common SOLT calibration mode in the industry at present. The sample is loaded and the test fixture is closed for testing.
The calibration of the test system refers to the calibration of a set of measurement system consisting of the vector network analyzer E5061B used in the test, a coaxial test cable connected with the vector network analyzer and an adapter. Calibration must be performed before the measurement system can be used to test the material to be measured. After the calibration is finished, the data of the calibration state can be saved, and the data can be repeatedly used when the test is carried out under the condition that the test condition is not changed.
Before loading the material sample to be tested, the surface of the sample should be carefully checked for the adhesion of particles, and if so, the particles should be removed in time. After the sample is loaded, the fixture is connected to a test system for testing.
In the embodiment of the present invention, in order to ensure that the measurement system can operate normally, reduce the test error in the test process, and obtain a true and reliable measurement value, the following aspects need to be noted on the basis of operating according to the test flow:
(1) control of ambient temperature
The components of the vector network analyzer and the test cable are very sensitive to temperature drift, which is mainly caused by the thermal expansion characteristics of the interconnection cables inside the test device and the conversion stability of the microwave frequency converter. In general, providing a stable ambient temperature minimizes temperature drift. Therefore, during the test, a certain ambient temperature should be maintained, typically at 23 ℃. + -. 2 ℃.
(2) Preheating of vector network analyzer
Before the test is started, the vector network analyzer needs to be started and preheated for half an hour to eliminate the influence of the temperature drift of the internal instruments of the vector network analyzer on the test result.
(3) Inspection jig and joint
Before the measurement system is connected, the test fixture and coaxial test cable port need to be inspected to remove any particles and dust that may be present and should be taken out of service if there are scratches, deformations or burrs.
(4) Considerations in sample Loading and System attachment
Before placing the test specimen in the test fixture, the surface of the material specimen should be carefully checked for smoothness and flatness, and if any, for timely removal of dust. If moisture is present on the surface of the test fixture or material sample, the sample should be loaded after the moisture has disappeared. The force is moderate when the sample is loaded and unloaded, so that the material sample and the coaxial part of the inner conductor of the clamp are prevented from being damaged and deformed.
When making the connection of the test system, the operator should work on a grounded conductive table mat and wear a grounded wrist strap to ground all the equipment to prevent static electricity from affecting. When the connection is performed, the force is not required to be excessive, and the tightness degree of all the connection parts is ensured to be equivalent.
When all the devices are connected, attention should be paid to the method of connection rotation, and only the movable nut is allowed to rotate to ensure that the contact pin and the jack move linearly. Otherwise, the pin and the socket may have spiral motion to accelerate wear and possibly loosen the inner pin to be used normally. After the cable connector is assembled, the pin is carefully checked for centering and if necessary, corrected to avoid damaging the connector jack to be connected.
In the embodiment of the present invention, five state models of a port network in a material S parameter measurement system are constructed, which are respectively: the first state: the straight-through model is characterized in that a left clamp and a right clamp are directly connected; and a second state: short-circuit model-only short-circuit element is included in the calibration element; and a third state: adding a short circuit model to the left standard test piece; and a fourth state: adding a short circuit model to the right standard test piece; and a fifth state: and (4) standard test piece models.
Five test conditions required two sets of calibration pieces to be made, a short circuit calibration piece and a standard air scattering calibration piece of known parameters.
The requirements of the short circuit calibration piece are as follows:
the closer the reflection coefficient is to 1, the better.
The requirements for a standard air scattering calibration piece of known parameters are:
(1) the thickness is not more than 5 mm;
(2) the air part can be replaced by a medium with known parameters, but the medium is required to be uniform, and the symmetry of the standard part is good.
And the reflection coefficient is a and the incidence coefficient is b.
Fig. 6 is a signal flow chart of a cascade network of a material S parameter testing system. According to this flowchart, the entire S-parameter equation of state for the fixture and test material is:
Figure BDA0002242975360000091
Figure BDA0002242975360000092
Figure BDA0002242975360000093
wherein, DeltaSM＝SM11×SM22-SM12×SM21，SMM11Indicating the reflection coefficient of the left port of the measurement material, SMM21Indicating the transmission coefficient from the measurement material from the left port to the right port, SMM12Indicating the transmission coefficient from the measurement material from the right port to the left port, SMM22Representing the reflection coefficient on the right side of the measured material;
SM11representing the reflection coefficient, SM, of the left port of the entire measurement system21Representing the transmission coefficient, SM, of the entire measurement system from the left port to the right port12Representing the transmission coefficient, SM, from the right port to the left port of the entire measurement system22Representing the reflection coefficient of the right port of the whole measuring system;
SL11denotes the reflection coefficient of the left clamp left port, SL21Representing the transmission coefficient, SL, of the left clamp from the left port to the right port12Representing the transmission coefficient, SL, of the left clamp from the right port to the left port22Representing the reflection coefficient of the right port of the left clamp;
SR11denotes the reflection coefficient, SR, of the left port of the right clamp21Representing the transmission coefficient, SR, of the right clamp from the left port to the right port12Representing the transmission coefficient, SR, of the right clamp from the right port to the left port22Representing the transmission coefficient of the right port of the left clamp.
It can be known from the above equation system that if the scattering parameters of the left and right clamps are known, the problem of clamp de-embedding errors can be solved, which is the core of de-embedding errors in the invention.
In the embodiment of the present invention, the equation of the relevant S parameter in state one is:
Figure BDA0002242975360000101
Figure BDA0002242975360000102
Figure BDA0002242975360000103
Figure BDA0002242975360000104
SMM in state11、SMM21、SMM12、SMM22Are respectively marked as S1、S2、S3、S4。
The equation for the relevant S parameter in state two is:
Figure BDA0002242975360000111
Figure BDA0002242975360000112
in state two, SMM11、SMM22Are respectively marked as S5、S6。
The equation for the relevant S parameter in state three is:
Figure BDA0002242975360000113
state three, SMM11Is marked as S7。
The equation for the relevant S parameter at state four is:
Figure BDA0002242975360000114
in State four, SMM22Is marked as S8。
The equation of the relevant S parameter under the fifth state is as follows:
Figure BDA0002242975360000116
Figure BDA0002242975360000117
SMM in State five11、SMM21、SMM12、SMM22Respectively record S9、S10、S11、S12。
In the embodiment of the invention, S obtained for five test states1～S12The S parameter of the left and right jigs as the test target is obtained by processing the data. The formula is from the normalization processing of an S parameter equation set under five states, and S is obtained1～S12The S-parameters of the jig can be obtained by processing according to the flowchart.
S obtained for five test states1～S12The data of (2) are processed to obtain the S parameter of the left clamp as the test target as follows:
Figure BDA0002242975360000121
Figure BDA0002242975360000122
E＝AC(S10(a2-b2)+S2b)+aC2S1S10-CS10a,
Figure BDA0002242975360000124
Figure BDA0002242975360000125
thus, SL11＝AΔSL+B,SL22＝CΔSL+D。
S obtained for five test states1～S12The data of (2) are processed to obtain the S parameter of the right clamp as the test target, which is specifically as follows:
Figure BDA0002242975360000126
Figure BDA0002242975360000127
P＝AC(S11(a2-b2)+S2b)+aC2S4S11-CS11a,
Figure BDA0002242975360000128
Figure BDA0002242975360000129
Figure BDA00022429753600001210
thus, SR11＝HΔSL+I,SR22＝JΔSL+K。
From the above, it can be obtained:
Figure BDA0002242975360000131
Figure BDA0002242975360000132
wherein, DeltaSL＝SL11×SL22-SL12×SL21，ΔSR＝SR11×SR22-SR12×SR21，ΔSLShould result in SL11And SL22Is not more than 1, DeltaSRShould result in SR11And SR22Is not more than 1 in absolute value.
After the S parameters of the left clamp and the right clamp are obtained, the S parameters are substituted into a state equation of an embedding error principle, and then the real S parameters of the material can be obtained, so that the embedding error of the clamps is removed.
In summary, the method for measuring S parameter of material based on de-embedding error provided by the embodiments of the present invention is convenient for de-clamping the embedding error in the S parameter measuring process of material, so as to accurately measure the electromagnetic performance parameter of material. Compared with the three states of the traditional TRL principle-based embedded error port network model, the five state models are provided. Then, a state equation is established according to the five state models. In the analysis of the dual-port cascade network, the correlation equation of the S parameter is directly listed, the traditional S parameter and T parameter conversion method is not adopted, and the data processing is simpler and more visual.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims (9)

1. A material S parameter measuring method based on de-embedding errors is characterized by comprising the following steps:
step S110: establishing a signal flow chart of a measuring process, analyzing the reasons for the embedding errors of the clamp, and determining a state equation of the embedding errors;
step S120: according to a signal flow chart of a measurement process, five state models of a port network in the material S parameter measurement system are constructed by changing a test sample;
step S130: establishing a fixture S parameter state equation of the five state models, and determining fixture S parameters;
step S140: and substituting the S parameter of the clamp into the state equation of the embedding error, and calculating to obtain the real S parameter of the material to be measured.
2. The method of claim 1, wherein in step S110, the determined state equation of the embedding error is:
Figure FDA0002242975350000011
Figure FDA0002242975350000012
Figure FDA0002242975350000013
Figure FDA0002242975350000014
wherein, DeltaSM＝SM11×SM22-SM12×SM21，
SMM11Reflection coefficient, SMM, representing the left port of the entire measurement system21Indicating the transmission coefficient of the entire measurement system from the left port to the right port, SMM12Indicating the transmission coefficient of the entire measurement system from the right port to the left port, SMM22Representing the reflection coefficient on the right side of the entire measurement system;
SM11representing the reflection coefficient, SM, of the left port of the material being measured21Representing the transmission coefficient, SM, of the material under test from the left port to the right port12Representing the transmission coefficient, SM, of the material under test from the right port to the left port22Representing the reflection coefficient of the right port of the measured material;
SL11denotes the reflection coefficient of the left clamp left port, SL21Representing the transmission coefficient of the left clamp from the left port to the right port,SL12representing the transmission coefficient, SL, of the left clamp from the right port to the left port22Representing the reflection coefficient of the right port of the left clamp;
SR11denotes the reflection coefficient, SR, of the left port of the right clamp21Representing the transmission coefficient, SR, of the right clamp from the left port to the right port12Representing the transmission coefficient, SR, of the right clamp from the right port to the left port22Representing the transmission coefficient of the right port of the left clamp.
3. The method for measuring S parameter of material based on de-embedding error as claimed in claim 2, wherein in the step S120, the five state models of the port network are respectively:
the first state: the straight-through model is characterized in that a left clamp and a right clamp are directly connected;
and a second state: short-circuit model-only short-circuit element is included in the calibration element;
and a third state: adding a short circuit model to the left standard test piece;
and a fourth state: adding a short circuit model to the right standard test piece;
and a fifth state: and (4) standard test piece models.
4. The method for measuring S parameter of material based on de-embedding error as claimed in claim 3, wherein the S parameter state equation of the fixture in state one is:
Figure FDA0002242975350000021
Figure FDA0002242975350000022
in State one, SMM11、SMM21、SMM12、SMM22Are respectively marked as S1、S2、S3、S4。
5. The method for measuring S parameter of material based on de-embedding error as claimed in claim 4, wherein the S parameter state equation of the fixture in the second state is:
Figure FDA0002242975350000032
in state two, SMM11、SMM22Are respectively marked as S5、S6。
6. The de-embedding error based material S parameter measurement method according to claim 5, wherein the fixture S parameter state equation of state three is:
Figure FDA0002242975350000033
wherein a represents the reflection coefficient of the calibration piece, and b represents the incidence coefficient of the calibration piece; state three, SMM11Is marked as S7。
7. The de-embedding error based material S parameter measurement method of claim 6, wherein the fixture S parameter state equation of state four is:
in State four, SMM22Is marked as S8。
8. The de-embedding error based material S parameter measurement method of claim 7, wherein the fixture S parameter state equation of state five is:
Figure FDA0002242975350000035
Figure FDA0002242975350000036
Figure FDA0002242975350000037
in State five, SMM11、SMM21、SMM12、SMM22Are respectively marked as S9、S10、S11、S12。
9. The method of claim 8, wherein the data S is utilized in conjunction with the signal flow graph1、S2、S3、S4、S5、S6、S7、S8、S9、S10、S11And S12And calculating the S parameter of the left clamp and the S parameter of the right clamp.
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