CN110739398A - Micro-display device anode silver reflecting layer and etching method of anode structure - Google Patents

Micro-display device anode silver reflecting layer and etching method of anode structure Download PDF

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Publication number
CN110739398A
CN110739398A CN201910968847.1A CN201910968847A CN110739398A CN 110739398 A CN110739398 A CN 110739398A CN 201910968847 A CN201910968847 A CN 201910968847A CN 110739398 A CN110739398 A CN 110739398A
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etching
controlled
layer
micro
anode
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曹贺
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Semiconductor Integrated Display Technology Co Ltd
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Semiconductor Integrated Display Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes

Abstract

The invention discloses an etching method for an anode silver reflecting layer and an anode structure of a micro-display device, which adopts argon as etching gas to carry out physical bombardment etching on silver by dry etching.

Description

Micro-display device anode silver reflecting layer and etching method of anode structure
Technical Field
The invention belongs to the technical field of OLED micro-display, and particularly relates to an micro-display device anode silver reflecting layer and an etching method of an anode structure.
Background
The organic light-Emitting Diode (OLED) is superior to an LCD in terms of the performance, so that in the research and development of OLEDs, the OLED technology is also in rapid development at present, top emission and bottom emission are two main processes, wherein top emission has the advantages of high aperture and high brightness and is widely applied by , namely light is emitted from above the device, the circuit design of a substrate does not influence the light Emitting area of the device, the working voltage of the OLED is lower under the same brightness, the service life is relatively longer, the top emission requires an anode material to have high work function and good chemical and morphological stability, and has good conductivity, and the anode part needs to have high reflectivity, so that the light Emitting efficiency of the OLED device can be ensured, the current Micro-OLED part has high reflectivity, and the current reflectivity of a silicon-based reflective electrode (TiN-reflective line width, ITO line width.
Disclosure of Invention
The invention aims to solve the technical problems in the prior art, and provides micro-display device anode silver reflecting layers and an etching method of an anode structure, aiming at realizing the etching of silver in a micro-display device as a reflecting layer.
In order to achieve the purpose, the invention adopts the technical scheme that:
etching method of anode silver reflecting layer of micro display device, using argon as etching gas, and carrying out physical bombardment etching on silver by dry etching.
In the dry etching, the flow rate of etching gas is controlled to be 100-200 sccm, the pressure is controlled to be 1-5 mTorr, the Source Power is controlled to be 500-800W, and the Bias Power is controlled to be 150-200W.
A method for etching anode structure of micro display device, comprising the following steps:
step , sequentially dry-etching the pixel layer and the second buffer layer from top to bottom of the anode structure;
step two, adopting argon as etching gas, and carrying out physical bombardment etching on the silver reflecting layer by dry etching;
and step three, performing dry etching on the th buffer layer.
The dry etching in the step adopts Cl2And BCl3As the etching gas, the flow rate is controlled to be 20-40 sccm, the pressure is controlled to be 3-10 mTorr, the Source Power is controlled to be 500-800W, and the Biaspower is controlled to be 100-150W.
The Cl2And BCl3The gas flow ratio of (2) is 1: 1.
The dry etching in the third step adopts Cl2And BCl3As the etching gas, the flow rate is controlled to be 50-80 sccm, the pressure is controlled to be 3-10 mTorr, the Source Power is controlled to be 500-800W, and the Biaspower is controlled to be 100-150W.
The pixel layer is a pixel electrode ITO, and the thickness of the pixel electrode ITO is
Figure BDA0002231408100000031
The th buffer layer comprises a Ti layer and a TiN layer, wherein the Ti layer has a thickness of
Figure BDA0002231408100000032
The thickness of the TiN layer is
Figure BDA0002231408100000034
The second buffer layer comprises a Ti layer and a TiN layer, wherein the thickness of the Ti layer isThe thickness of the TiN layer is
Figure BDA0002231408100000035
The thickness of the silver reflecting layer is
Figure BDA0002231408100000036
The Micro display device is a silicon-based Micro-OLED Micro display device.
The invention has the beneficial effects that: in the invention, the dry etching bombards the silver film by utilizing the ionization of Ar, thereby achieving the etching effect of the silver film. The dry etching method has the etching rate of 30 nm/min-100 nm/min for Ag. And the physical bombardment is adopted, the CD (line width) can be 0.1-0.25 μm, the profile (appearance) is better, and can be controlled at 70-90 degrees, and the CD is superior to the traditional wet etching. The method has the etching effect on the silver film, and can meet the requirement of an anode reflecting layer of a silicon-based micro-OLED micro-display device.
Drawings
The description includes the following figures, the contents shown are respectively:
FIG. 1 is a schematic diagram of a prior art anode structure;
FIG. 2 is a schematic structural diagram after PVD film formation;
FIG. 3 is a schematic view of a structure of a mask applied to an anode structure after film formation;
fig. 4 is a schematic structural diagram after dry etching of the pixel layer, the second buffer layer, the silver film layer and the th buffer layer;
fig. 5 is a schematic diagram of a structure for removing the mask.
Labeled as:
100. the CMOS driving circuit comprises a silicon-based substrate, a 110 th buffer layer, an th buffer layer, a 120 th reflective layer, a 130 th buffer layer, a 140 th buffer layer, a pixel layer, a 150 th buffer layer, a developed substrate overall structure, a 160 th structure after three times of etching, a 170 th silicon-based substrate and an anode structure.
Detailed Description
In the following description of the embodiments, is described in detail to help those skilled in the art understand, understand and understand the concept and technical solution of the present invention more completely, accurately and deeply, and to help them to practice, referring to the accompanying drawings, it is to be noted that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "inner", "outer", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, but not for indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus not to be understood as limiting the invention.
As shown in fig. 2 to 5, after cleaning the silicon substrate 100 with the cathode fabricated and containing the Drive CMOS circuit, an anode layer is formed by forming th buffer layer 110, Ag reflective layer 120, second buffer layer 130 and pixel layer 140 in sequence on the silicon substrate of the CMOS Drive circuit by PVD plating, wherein the thickness of Ti layer in th buffer layer is
Figure BDA0002231408100000041
The thickness of the TiN layer is
Figure BDA0002231408100000042
Figure BDA0002231408100000043
(Ti is formed first and TiN is formed second and then upper), and the thickness of the Ag reflecting layer is
Figure BDA0002231408100000044
The thickness of the Ti layer in the second buffer layer is
Figure BDA0002231408100000045
The thickness of the TiN layer is
Figure BDA0002231408100000046
(Ti is firstly formed into a film at the lower part, TiN is then formed into a film at the upper part), the pixel layer is a pixel electrode ITO, and the thickness of the pixel electrode ITO is
Figure BDA0002231408100000051
The pixel electrode 140 and the second buffer layer 130 after the film formation can be formed into a desired pattern by using a conventional dry etching method. Since Ag is chemically stable and does not easily react with a chemical (active chemical group) during dry etching, and thus the chemical reaction is insufficient, physical bombardment etching can be performed by controlling Ion to obtain a high Etch rate. Based on this, during dry etching, the ionization of argon gas is used to perform physical bombardment on Ag by adjusting Ar gas Flow, RF power, and etching pressure, so as to achieve the etching effect.
The etching method is suitable for anode graphical etching of the silicon-based Micro-OLED Micro-display device, and the ICP mode (inductively coupled plasma etching method) is selected for the anode graphical etching method of the silicon-based Micro-OLED Micro-display device. The etching method comprises the steps of coating glue, exposing and developing on the pixel electrode ITO after film formation is finished to obtain a developed substrate overall structure 150; then, performing three times of dry etching on the developed substrate overall structure 150 to obtain a structure 160 after three times of etching; STR (wet photoresist removal, namely removing photoresist on the structure 160 by using a conventional photoresist removal solution) is performed on the structure 160 after the third etching to obtain a final anode pattern (a silicon-based substrate and an anode structure 170); wherein the etching of the anode structure is achieved by three main etching steps.
The specific etching steps are as follows:
, etching the pixel layer 140 and the second buffer layer 130 with Cl as the etching gas2And BCl3Gas flow rate 1:1, controlling the flow rate to be 20 sccm-40 sccm,the pressure is controlled to be 3 mTorr-10 mTorr, the Source Power is controlled to be 500W-800W, and the Bias Power is controlled to be 100W-150W.
And step two, finishing the etching of the reflecting layer silver film 120, wherein in the step, Ar is selected as etching gas, the gas flow is controlled to be 100 sccm-200 sccm, the pressure is controlled to be 1 mTorr-5 mTorr, the Source Power is controlled to be 500W-800W, and the BiasPower is controlled to be 150W-200W.
Step three, completing the etching of the buffer layer 110, wherein the etching gas in the step selects Cl2And BCl3Gas flow rate 1:1, the air flow is controlled to be 50 sccm-80 sccm, the pressure is controlled to be 3 mTorr-10 mTorr, the Source Power is controlled to be 500W-800W, and the Bias Power is controlled to be 100W-150W.
The following is illustrated by specific preferred examples:
example 1
In the anode structure formed by PVD electroplating process on the silicon substrate of the CMOS drive circuit, the thickness of the Ti layer in the th buffer layer is
Figure BDA0002231408100000061
The thickness of the TiN layer is
Figure BDA0002231408100000062
The thickness of the Ag reflecting layer is
Figure BDA0002231408100000063
The thickness of the Ti layer in the second buffer layer is
Figure BDA0002231408100000064
The thickness of the TiN layer is
Figure BDA0002231408100000065
The pixel layer is pixel electrode ITO with a thickness of
Figure BDA0002231408100000066
The method for etching the anode of the silicon-based Micro-OLED Micro-display device in a graphical mode comprises the following steps:
, etching the pixel layer 140 and the second buffer layer 130 with Cl as the etching gas2And BCl3Gas flow rate 1:1, the flow rate is controlled at 30sccm, the pressure is controlled at 5mTorr, the Source Power is controlled at 600W, and the Bias Power is controlled at 120W.
And step two, finishing the etching of the reflecting layer silver film, wherein Ar is selected as etching gas in the step, the gas flow is controlled to be 150sccm, the pressure is controlled to be 3mTorr, the Source Power is controlled to be 600W, and the Bias Power is controlled to be 170W.
Step three, completing the etching of the th buffer layer 110, wherein the etching gas in this step is Cl2And BCl3Gas flow rate 1:1, the air flow is controlled at 60sccm, the pressure is controlled at 5mTorr, the Source Power is controlled at 600W, and the Bias Power is controlled at 120W.
Example 2
In the anode structure formed by PVD electroplating process on the silicon substrate of the CMOS drive circuit, the thickness of the Ti layer in the th buffer layer is
Figure BDA0002231408100000067
The thickness of the TiN layer is
Figure BDA0002231408100000068
The thickness of the Ag reflecting layer is
Figure BDA0002231408100000069
The thickness of the Ti layer in the second buffer layer is
Figure BDA00022314081000000610
The thickness of the TiN layer is
Figure BDA00022314081000000611
The pixel layer is pixel electrode ITO with a thickness of
The method for etching the anode of the silicon-based Micro-OLED Micro-display device in a graphical mode comprises the following steps:
, etching the pixel layer 140 and the second buffer layer 130 with Cl as the etching gas2And BCl3Gas flow rate 1:1, the flow rate is controlled at 40sccm, the pressure is controlled at 10mTorr, the Source Power is controlled at 500W, and the Bias Power is controlled at 150W.
And step two, finishing the etching of the reflecting layer silver film, wherein Ar is selected as etching gas in the step, the gas flow is controlled to be 200sccm, the pressure is controlled to be 5mTorr, the Source Power is controlled to be 800W, and the Bias Power is controlled to be 200W.
Step three, completing the etching of the th buffer layer 110, wherein the etching gas in this step is Cl2And BCl3Gas flow rate 1:1, the air flow is controlled at 80sccm, the pressure is controlled at 10mTorr, the Source Power is controlled at 500W, and the BiasPower is controlled at 150W.
Comparative example: and taking aluminum as a reflecting layer to finally form an anode structure.
The result shows that after the aluminum is replaced by the silver in the reflecting layer, the reflectivity is improved by more than 5%. The line width precision of the wet-method etched silver can only reach 3.5 mu m; the line width of the above embodiments can reach 0.25 μm;
the invention is described above with reference to the accompanying drawings. It is to be understood that the specific implementations of the invention are not limited in this respect. Various insubstantial improvements are made by adopting the method conception and the technical scheme of the invention; the present invention is not limited to the above embodiments, and can be modified in various ways.

Claims (10)

  1. The etching method of the anode silver reflecting layer of the micro-display device is characterized in that argon is used as etching gas, and dry etching is used for carrying out physical bombardment etching on silver.
  2. 2. The method for etching an anode silver reflective layer of a microdisplay device according to claim 1, wherein in the dry etching, the flow rate of the etching gas is controlled to be 100-200 sccm, the pressure is controlled to be 1-5 mTorr, the source RF power is controlled to be 500-800W, and the bias RF power is controlled to be 150-200W.
  3. 3, A method for etching anode structure of micro display device, comprising the following steps:
    step , sequentially dry-etching the pixel layer and the second buffer layer from top to bottom of the anode structure;
    step two, adopting argon as etching gas, and carrying out physical bombardment etching on the silver reflecting layer by dry etching;
    and step three, performing dry etching on the th buffer layer.
  4. 4. The method of claim 3, wherein the step dry etching is performed with Cl2And BCl3As an etching gas, the flow rate is controlled to be 20-40 sccm, the pressure is controlled to be 3-10 mTorr, the source RF power is controlled to be 500-800W, and the bias RF power is controlled to be 100-150W.
  5. 5. The method of etching an anode structure of a microdisplay device of claim 4 in which the Cl is2And BCl3The gas flow ratio of (2) is 1: 1.
  6. 6. The method of etching an anode structure of a microdisplay device according to claim 3, wherein the dry etching in step three uses Cl2And BCl3As an etching gas, the flow rate is controlled to be 50-80 sccm, the pressure is controlled to be 3-10 mTorr, the source RF power is controlled to be 500-800W, and the bias RF power is controlled to be 100-150W.
  7. 7. The method of claim 3, wherein the pixel layer is a pixel electrode ITO having a thickness of
    Figure FDA0002231408090000011
  8. 8. The method of etching an anode structure of a microdisplay device of claim 3 in which the th buffer layer comprises a Ti layer and a TiN layer, the Ti layer having a thickness of
    Figure FDA0002231408090000022
    The thickness of the TiN layer is
    Figure FDA0002231408090000021
    The second buffer layer comprises a Ti layer and a TiN layer, wherein the thickness of the Ti layer is
    Figure FDA0002231408090000023
    The thickness of the TiN layer is
    Figure FDA0002231408090000024
  9. 9. The method of etching an anode structure of a micro-display device according to claim 3, wherein the silver reflective layer has a thickness of
  10. 10. The method of etching an anode structure of a Micro-display device according to claim 3, wherein the Micro-display device is a silicon-based Micro-OLED Micro-display device.
CN201910968847.1A 2019-10-12 2019-10-12 Micro-display device anode silver reflecting layer and etching method of anode structure Pending CN110739398A (en)

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CN112103402A (en) * 2020-11-16 2020-12-18 浙江宏禧科技有限公司 Method for preparing silicon-based OLED anode and OLED device through dry etching
CN112420970A (en) * 2020-11-19 2021-02-26 安徽熙泰智能科技有限公司 Method for protecting and etching anode side wall of silicon-based Micro OLED Micro-display device
CN112636164A (en) * 2020-12-18 2021-04-09 勒威半导体技术(嘉兴)有限公司 Ultrathin insulating layer semiconductor laser and preparation method thereof

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CN112636164A (en) * 2020-12-18 2021-04-09 勒威半导体技术(嘉兴)有限公司 Ultrathin insulating layer semiconductor laser and preparation method thereof

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