CN110726915A - Modular multilevel converter valve submodule IGBT fault detection system and method - Google Patents

Modular multilevel converter valve submodule IGBT fault detection system and method Download PDF

Info

Publication number
CN110726915A
CN110726915A CN201910799671.1A CN201910799671A CN110726915A CN 110726915 A CN110726915 A CN 110726915A CN 201910799671 A CN201910799671 A CN 201910799671A CN 110726915 A CN110726915 A CN 110726915A
Authority
CN
China
Prior art keywords
pulse
switch
control signal
control
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201910799671.1A
Other languages
Chinese (zh)
Other versions
CN110726915B (en
Inventor
姚陈果
余亮
董守龙
马剑豪
李孟杰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chongqing University
Original Assignee
Chongqing University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chongqing University filed Critical Chongqing University
Priority to CN201910799671.1A priority Critical patent/CN110726915B/en
Publication of CN110726915A publication Critical patent/CN110726915A/en
Application granted granted Critical
Publication of CN110726915B publication Critical patent/CN110726915B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2608—Circuits therefor for testing bipolar transistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/28—Provision in measuring instruments for reference values, e.g. standard voltage, standard waveform

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

The invention discloses a modular multilevel converter valve submodule IGBT fault detection system and a method. The method comprises the following steps: 1) the pulse generation system generates pulses and sends the pulses to the modular multi-level converter valve sub-module IGBT; 2) the fault detection system acquires a response signal U of a modular multi-level sub-converter valve sub-module IGBT gate pole coupled under pulse excitationk. 3) The data processing system responds to the signal UkAnd processing and judging to obtain the fault type. According to the invention, the self-energy-taking system is used for taking energy from the energy storage capacitor of the sub-module, so that the problem of lack of an external power supply is solved.

Description

Modular multilevel converter valve submodule IGBT fault detection system and method
Technical Field
The invention relates to the technical field of power equipment fault detection, in particular to a modular multilevel converter valve submodule IGBT fault detection system and method.
Background
In recent years, a flexible direct-current transmission system is rapidly developed, a flexible direct-current converter valve adopts a structural form that modular multi-level sub-modules are connected in series, the reliability of the sub-modules is crucial to the system, if the sub-modules have short-circuit faults, the power stress of the other sub-modules is increased, and chain reaction is seriously caused; if the submodule has an open-circuit fault, the submodule cannot operate in a normal working mode, and a bridge arm can generate larger circulation current. Therefore, the modular multilevel fault monitoring has important significance for adjusting a control mode, reducing faults, improving reliability and maintaining power failure.
The core component IGBT in the sub-module is the weakest part, and can be generally divided into a chip and a packaged fault according to the position of the IGBT fault, and the IGBT chip usually breaks down and is short-circuited due to electrical overstress, latch-up effect or overheating; the most common package failures often occur at the bond wire to chip connection, resulting in an open circuit.
At present, the research is directed to the faults of the packaging layer, the detection of the IGBT packaging faults is realized by detecting the state of a packaging lead and the change of packaging thermal resistance, the methods need to measure the voltage and the current of a sub-module in real time, and algorithms such as wavelet singular entropy, Kalman filtering, a sliding mode observer and the like are adopted for data analysis and fault identification. The flexible-straight converter valve comprises a considerable number of sub-modules, the detection data volume is huge, and huge pressure is brought to data processing; the complexity of the algorithm places a heavy computational load on the system.
On the other hand, research on the chip level has been mainly developed around the detection of the chip junction temperature. The traditional methods have the advantages of easiness in online estimation by modifying an IGBT embedded sensor or roughly estimating the chip junction temperature by measuring the shell temperature by adopting an infrared camera, but have the problems of high cost for modifying the IGBT and low measurement accuracy; the new temperature-sensitive inductive parameter junction temperature extraction method overcomes the problems that the IGBT needs to be modified and the measurement accuracy is required, but the method usually needs an additional power supply, has high requirements on the power supply and has higher intrusiveness on the system; meanwhile, the thermosensitive inductive parameter junction temperature extraction method has high requirement on measurement precision, and has huge data flow pressure for numerous sub-modules of the converter valve.
The existing submodule fault detection method has the problems of complex algorithm, large measurement quantity, high system intrusiveness and the like.
Disclosure of Invention
The present invention is directed to solving the problems of the prior art.
The technical scheme adopted for achieving the purpose of the invention is that the modular multilevel converter valve sub-module IGBT fault detection system mainly comprises a self-energy-taking system, a pulse generation system, a trigger control system, a fault detection system and a data processing system.
Energy storage capacitor C of self-energy-taking system and modular multi-level converter valve sub-module0And (4) connecting in parallel. Energy storage capacitor C0Discharging the self-powered system.
The self-energy-taking system supplies power to the pulse generation system.
Further, the self-energy-taking system comprises a capacitor C connected in seriesdiv1And a capacitor Cdiv2。
And the trigger control system generates a control signal according to the fault type signal of the data processing system and sends the control signal to the pulse generation system so as to control the pulse parameter generated by the pulse generation system.
Further, the pulse excitation width range is [10ns, 1000ns ], the frequency range is [1Hz, 1000Hz ], and the maximum output amplitude is 10 kV.
Further, the trigger control system sends a control signal to the pulse generation system. Wherein the control signal IN1Control switch SW1On/off of, control signal IN2Control switch SW2On/off of, control signal IN3Control switch SW5On/off of, control signal IN4Control switch SW6On/off of, control signal OUT1Control switch SW3On/off of, control signal OUT2Control switch SW4On/off of, control signal OUT3Control switch SW7On/off of, control signal OUT4Control switch SW8On/off of (3), control Signal Signal1_1…, control Signal Signal1_nControlling a semiconductor switching tube S1_1、…Semiconductor switch tube S1_nOn/off of (3), control Signal Signal2_1…, control Signal Signal2_(2n)Controlling a semiconductor switching tube S2_1…, semiconductor switch tube S2_2nOn/off of Signal3_1、…、Signal3_nControlling a semiconductor switch S3_1…, semiconductor switch tube S3_nOn/off of (3), control Signal Signal4_1…, control Signal Signal4_(2n)Controlling a semiconductor switching tube S4_1…, semiconductor switch tube S4_2nMake and break of (2).
When the control signal IN1Control switch SW1Closed, control signal IN2Control switch SW2When switched off, the pulse generating system I forms a pulse by means of the pulse forming line TL1 and the pulse forming line TL 2. Control signal OUT1Control switch SW3Closed, control signal OUT2Control switch SW4And the pulse generating system I is switched off and outputs pulses formed by the pulse forming line TL1 and the pulse forming line TL 2. The input end of the pulse generating system I passes through a resistor R1Charging the pulse forming line TL1 and the pulse forming line TL2, and receiving a control Signal of a trigger control system by a pulse generating system I1_1…, control Signal Signal1_nControlling a semiconductor switching tube S1_1…, semiconductor switch tube S1_nIs turned on to pass through the switch SW3And outputting the pulse to an output port.
When the control signal IN1Control switch SW1Off, control signal IN2Control switch SW2When closed, the pulse generating system I passes through a capacitor C1…, capacitor CnA pulse is formed. Control signal OUT1Control switch SW3Open, control signal OUT2Control switch SW4Closed, pulse generating system I output capacitor C1…, capacitor CnThe pulse formed. I input end of pulse generation system passes through device Z1…, device ZnTo the capacitor C1…, capacitor CnThe charging and pulse generation system I receives a control Signal of a trigger control system2_1…, controlSignal2_nControlling a semiconductor switching tube S2_1…, semiconductor switch tube S2_nThe conduction pulse generation system I receives a control Signal of a trigger control system2_(n+1)…, control Signal Signal2_2nControlling a semiconductor switching tube S2_(n+1)…, semiconductor switch tube S2_2nIs turned off so as to pass through the switch SW4And outputting the pulse to an output port.
When the control signal IN3Control switch SW5Closed, control signal IN4Control switch SW6When switched off, the pulse generating system II pulses through the pulse forming line TL3 and the pulse forming line TL 4. Control signal OUT3Control switch SW7Closed, control signal OUT4Control switch SW8And the pulse generating system II is switched off and outputs pulses formed by the pulse forming line TL3 and the pulse forming line TL 4. The input end of the pulse generation system II passes through a resistor R2Charging the pulse forming line TL3 and the pulse forming line TL4, and receiving a control Signal of a trigger control system by a pulse generating system II3_1…, control Signal Signal3_nControlling a semiconductor switching tube S3_1…, semiconductor switch tube S3_nIs turned on to pass through the switch SW7And outputting the pulse to an output port.
When the control signal IN3Control switch SW5Off, control signal IN4Control switch SW6When closed, the pulse generating system II passes through a capacitor C(n+1)…, capacitor C2nA pulse is formed. Control signal OUT3Control switch SW7Open, control signal OUT4Control switch SW8Closed, pulse generating system II output capacitor C(n+1)…, capacitor C2nThe pulse formed. I input end of pulse generation system passes through device Z(n+1)…, device Z2nTo the capacitor C(n+1)…, capacitor C2nThe charging and pulse generation system II receives a control Signal of the trigger control system3_1…, control Signal Signal3_nControlling a semiconductor switching tube S3_1…, semiconductor switch tube S3_nThe conduction pulse generation system II receives a control Signal of the trigger control system4_(n+1)…, control Signal Signal4_2nControlling a semiconductor switching tube S4_(n+1)…, semiconductor switch tube S4_2nIs turned off so as to pass through the switch SW8And outputting the pulse to an output port.
The pulse generation system generates pulses and sends the pulses to the modular multi-level converter valve sub-module IGBT.
Further, the pulse generation system comprises a pulse generation system I and a pulse generation system II.
Pulse generating system I and capacitor Cdiv1And (4) connecting in parallel. Pulse generating system II and capacitor Cdiv2And (4) connecting in parallel.
The circuit structure of the pulse generating system I is as follows:
the input end of the pulse generating system I is an a end and a b end respectively, and the output end is a d end and an e end respectively.
a terminal is sequentially connected with a switch SW in series1Resistance R1Pulse forming line TL1, pulse forming line TL2 and switch SW3And then accessing the e terminal.
a terminal is sequentially connected with a switch SW in series1Resistance R1Pulse forming line TL1 and switch SW3And then the d end is accessed.
a terminal is sequentially connected with a switch SW in series1And a resistance R1Rear-connected semiconductor switch tube S1_1Of the substrate.
Semiconductor switch tube S1_iSource electrode of the series semiconductor switch tube S1_(i+1)Of the substrate.
i＝1,2，…，n-1。
Semiconductor switch tube S1_nThe source series pulse of (a) forms line TL 1.
Semiconductor switch tube S1_1…, semiconductor switch tube S1_nIs in signal connection with the trigger control system.
End b is sequentially connected with a switch SW in series1And a pulse forming line TL 1.
End b is sequentially connected with a switch SW in series1And a semiconductor switching tube S1_nOf the substrate.
a terminal is sequentially connected with a switch SW in series2Device Z1…, device ZnBack series semiconductor switch tube S2_nOf the substrate.
a terminal is sequentially connected with a switch SW in series2Device Z1…, device ZjCapacitor CjRear-connected semiconductor switch tube S2_jOf the substrate. j is 1,2, …, n.
a terminal is sequentially connected with a switch SW in series2Device Z1Capacitor C1And a switch SW4And then the d end is accessed.
b terminal series semiconductor switch tube S2_(n+1)Of the substrate.
Semiconductor switch tube S2_(n+j)Drain electrode of the series connection semiconductor switch tube S2_jOf the substrate.
Semiconductor switch tube S2_jDrain series device ZjAnd device Zj+1One end connected to each other.
Semiconductor switch tube S2_2nDrain series switch SW4And then accessing the e terminal.
Semiconductor switch tube S2_1…, semiconductor switch tube S2_2nIs in signal connection with the trigger control system.
The circuit structure of the pulse generating system II is as follows:
the input end of the pulse generating system II is an f end and a g end respectively, and the output end of the pulse generating system II is an h end and a k end respectively.
f terminal is connected with switch SW in series5Resistance R2Pulse forming line TL3, pulse forming line TL4 and switch SW7And then accessing the k terminal.
f terminal is connected with switch SW in series5Resistance R2Pulse forming line TL3 and switch SW7And then accessing the h end.
The f end is sequentially connected with a switch SW5 and a resistor R in series2Rear-connected semiconductor switch tube S3_1Of the substrate.
Semiconductor switch tube S3_iSource electrode of the series semiconductor switch tube S3_(i+1)Of the substrate.
i＝1,2，…，n-1。
Semiconductor switch tube S3_nThe source series pulse of (a) forms line TL 3.
Semiconductor switch tube S3_1…, semiconductor switch tube S3_nIs in signal connection with the trigger control system.
The g end is sequentially connected with a switch SW in series5And a pulse forming line TL 3.
The g end is sequentially connected with a switch SW in series5And a semiconductor switching tube S3_nOf the substrate.
f terminal is connected with switch SW in series6Device Z(n+1)…, device Z2nBack series semiconductor switch tube S4_nOf the substrate.
f terminal is connected with switch SW in series6Device Z(n+1)…, device ZmCapacitor CmRear-connected semiconductor switch tube S4_jOf the substrate. N, n +1, …, m.
f terminal is connected with switch SW in series6Device Z(n+1)Capacitor C(n+1)And a switch SW8And then accessing the h end.
g-terminal series semiconductor switch tube S4_(n+1)Of the substrate.
Semiconductor switch tube S4_(n+j)Drain electrode of the series connection semiconductor switch tube S4_jOf the substrate.
Semiconductor switch tube S4_jDrain series device Z(n+m)And device Z(n+m+1)One end connected to each other.
Semiconductor switch tube S4_2nDrain series switch SW8And then accessing the k terminal.
Semiconductor switch tube S4_1…, semiconductor switch tube S4_2nIs in signal connection with the trigger control system.
Further, the device Z1…, device Z2nBe a resistor, inductor or semiconductor diode.
The fault detection system acquires a response signal U of a modular multi-level sub-converter valve sub-module IGBT gate pole coupled under pulse excitationkAnd is sent toA data processing system.
Further, the fault detection system comprises an overvoltage protection unit, a signal acquisition unit and a filtering unit.
The overvoltage protection unit protects the signal acquisition device, the filtering unit, the data processing system and the trigger control system from being impacted by the gate coupling overvoltage of the modular multi-level converter valve sub-module IGBT.
The signal acquisition unit acquires a response signal U of the IGBT gate pole of the modular multi-level sub-converter valve sub-module coupled under pulse excitationk。
The filtering unit filters the response signal and filters the filtered response signal UkAnd sending to a data processing system.
The IGBT module comprises an upper bridge arm IGBT T1And a lower arm IGBT T2。
The data processing system responds to the signal UkAnd processing and judging to obtain the fault type.
And the data processing system generates a fault type signal according to the fault type and sends the fault type signal to the trigger control system.
Further, the data processing system responds to the signal UkThe main steps of processing and judging the fault type are as follows:
1) the data processing system receives response signals U at the time k and the time k +1kAnd Uk+1. k is initially 0.
2) Calculating the average response voltage ukNamely:
in the formula,. DELTA.T is time.
'
3) Determining the average response voltage ukWhether or not less than a threshold value epsilon1If yes, let the voltage Uj＝UkAnd proceeds to step 4. If not, enabling k + k +1, and returning to the step 1.
4) And judging whether k is greater than N, if not, enabling k + k +1, and returning to the step 1. If yes, go to step 5.
5) Calculating the average voltage
Figure BDA0002181964470000072
Namely:
Figure BDA0002181964470000073
6) determining the average voltage
Figure BDA0002181964470000074
Whether or not less than a threshold value epsilon2And if so, judging that the IGBT of the modular multi-level converter valve sub-module is in short-circuit fault. If not, go to step 7.
7) Judgment of
Figure BDA0002181964470000075
And judging whether the modular multi-level converter valve sub-module IGBT is in an open-circuit fault state or not, if not, judging that the modular multi-level converter valve sub-module IGBT is in the fault state, and if so, judging that the modular multi-level converter valve sub-module IGBT is in the open-circuit fault state.
The method based on the modular multilevel converter valve sub-module IGBT fault detection system mainly comprises the following steps:
1) the self-energy-taking system supplies power to the pulse generation system. The pulse generation system generates pulses and sends the pulses to the modular multi-level converter valve sub-module IGBT.
2) The fault detection system acquires a response signal U of a modular multi-level sub-converter valve sub-module IGBT gate pole coupled under pulse excitationkAnd sent to the data processing system.
3) The data processing system responds to the signal UkAnd processing and judging to obtain the fault type.
And the data processing system generates a fault type signal according to the fault type and sends the fault type signal to the trigger control system.
4) And the trigger control system generates a control signal according to the fault type signal of the data processing system and sends the control signal to the pulse generation system so as to control the pulse parameter generated by the pulse generation system, and the step 1 is returned to continue to detect the IGBT fault of the modular multi-level converter valve sub-module.
The technical effect of the present invention is undoubted. The invention provides the charged fault detection device which can be operated in a charged mode, is simple in detection method and can be highly integrated with a system.
The invention has the following effects:
1) the whole device comprises a self-energy-taking system, energy is taken from the energy storage capacitor of the sub-module, an additional power supply is not needed, the device cost is reduced, and meanwhile the complexity of the system is reduced.
2) The fault detection device comprises a pulse generation system, is independent of the submodule main loop, and reduces the invasiveness of the system.
3) The fault detection device is connected in parallel with the driving system, can be directly embedded into the driving system, and can realize live detection.
4) According to the invention, the self-energy-taking system is used for taking energy from the energy storage capacitor of the sub-module, so that the problem of lack of an external power supply is solved; the fault detection system is connected with the sub-module driving system in parallel, shares control port data, realizes high integration with the system, and has no invasion to the system; the fault detection system only needs voltage data, and the data processing amount is small.
Drawings
FIG. 1 is a connection diagram of a modular multilevel converter valve submodule IGBT fault detection device and a modular multilevel converter valve submodule based on pulse coupling response;
FIG. 2 is a schematic diagram of a modular multi-level converter valve sub-module;
FIG. 3 is a schematic diagram of a self-powered system;
FIG. 4 is a schematic diagram of a pulse generating system I;
FIG. 5 is a schematic diagram of a pulse generating system II;
FIG. 6 is a schematic diagram of a fault detection system;
FIG. 7 is a schematic diagram I of the working state of a pulse generation system I when the modular multi-level converter valve sub-module fault detection device based on pulse coupling response works;
FIG. 8 is a schematic diagram II of a working state of a pulse generation system I when the modular multi-level converter valve sub-module fault detection device based on pulse coupling response works;
FIG. 9 is a schematic diagram I of a working state of a pulse generation system II during working of the modular multi-level converter valve sub-module fault detection device based on pulse coupling response;
FIG. 10 is a schematic diagram II of the working state of a pulse generation system II during the working of the modular multi-level converter valve sub-module fault detection device based on the pulse coupling response;
FIG. 11 is an IGBT equivalent two-port network;
FIG. 12 is a block diagram of a fault type identification algorithm;
FIG. 13 is an experimental time domain response waveform for a 1200V/60A IGBT module in which the method of the present invention is applied;
FIG. 14 is an experimental spectral response waveform for a 1200V/60A IGBT module to which the method of the present invention is applied.
Detailed Description
The present invention is further illustrated by the following examples, but it should not be construed that the scope of the above-described subject matter is limited to the following examples. Various substitutions and alterations can be made without departing from the technical idea of the invention and the scope of the invention is covered by the present invention according to the common technical knowledge and the conventional means in the field.
Example 1:
referring to fig. 1 to 12, the modular multilevel converter valve sub-module IGBT fault detection system mainly includes a self-energy-taking system, a pulse generation system, a trigger control system, a fault detection system, and a data processing system.
Energy storage capacitor C of self-energy-taking system and modular multi-level converter valve sub-module0And (4) connecting in parallel. Energy storage capacitor C0Discharging the self-powered system.
It should be noted that the modular multi-level converter valve sub-module includes, but is not limited to, a half-bridge topology as shown in fig. 2, and should also include other variant topologies such as a full-bridge topology, a hybrid topology, and the like.
Submodule energy storage capacitor C0The capacitance value is generally between one hundred microfarads and several millifarads, and C is selected to reduce the influence of the energy-taking capacitor on the energy-storing capacitordiv1＝Cdiv2＝10μF。
The self-energy-taking system supplies power to the pulse generation system.
Further, the self-energy-taking system comprises a capacitor C connected in seriesdiv1And a capacitor Cdiv2。
And the trigger control system generates a control signal according to the fault type signal of the data processing system and sends the control signal to the pulse generation system so as to control the pulse parameter generated by the pulse generation system.
Further, the pulse excitation width range is [10ns, 1000ns ], the frequency range is [1Hz, 1000Hz ], and the maximum output amplitude is 10 kV.
Further, the trigger control system sends a control signal to the pulse generation system. Wherein the control signal IN1Control switch SW1On/off of, control signal IN2Control switch SW2On/off of, control signal IN3Control switch SW5On/off of, control signal IN4Control switch SW6On/off of, control signal OUT1Control switch SW3On/off of, control signal OUT2Control switch SW4On/off of, control signal OUT3Control switch SW7On/off of, control signal OUT4Control switch SW8On/off of (3), control Signal Signal1_1…, control Signal Signal1_nControlling a semiconductor switching tube S1_1…, semiconductor switch tube S1_nOn/off of (3), control Signal Signal2_1…, control Signal Signal2_(2n)Controlling a semiconductor switching tube S2_1…, semiconductor switch tube S2_2nOn/off of Signal3_1、…、Signal3_nControlling a semiconductor switch S3_1…, semiconductor switch tube S3_nOn/off of (3), control Signal Signal4_1…, control Signal Signal4_(2n)Controlling a semiconductor switching tube S4_1…, semiconductor switch tube S4_2nMake and break of (2).
When the control signal IN1Control switch SW1Closed, control signal IN2Control switch SW2When switched off, the pulse generating system I forms a pulse by means of the pulse forming line TL1 and the pulse forming line TL 2. Control signal OUT1Control switch SW3Closed, control signal OUT2Control switch SW4And the pulse generating system I is switched off and outputs pulses formed by the pulse forming line TL1 and the pulse forming line TL 2. The input end of the pulse generating system I passes through a resistor R1Charging the pulse forming line TL1 and the pulse forming line TL2, and receiving a control Signal of a trigger control system by a pulse generating system I1_1…, control Signal Signal1_nControlling a semiconductor switching tube S1_1…, semiconductor switch tube S1_nIs turned on to pass through the switch SW3And outputting the pulse to an output port. When the control signal IN1Control switch SW1Off, control signal IN2Control switch SW2When closed, the pulse generating system I passes through a capacitor C1…, capacitor CnA pulse is formed. Control signal OUT1Control switch SW3Open, control signal OUT2Control switch SW4Closed, pulse generating system I output capacitor C1…, capacitor CnThe pulse formed. I input end of pulse generation system passes through device Z1…, device ZnTo the capacitor C1…, capacitor CnThe charging and pulse generation system I receives a control Signal of a trigger control system2_1…, control Signal Signal2_nControlling a semiconductor switching tube S2_1…, semiconductor switch tube S2_nThe conduction pulse generation system I receives a control Signal of a trigger control system2_(n+1)…, control Signal Signal2_2nControlling a semiconductor switching tube S2_(n+1)…, semiconductor switch tube S2_2nIs turned off so as to pass through the switch SW4And outputting the pulse to an output port.
When the control signal IN3Control switch SW5Closed, control signal IN4Control switch SW6At disconnection, the pulse generating system II is pulsed by pulse forming line TL3 and pulse forming line TL 4. Control signal OUT3Control switch SW7Closed, control signal OUT4Control switch SW8And the pulse generating system II is switched off and outputs pulses formed by the pulse forming line TL3 and the pulse forming line TL 4. The input end of the pulse generation system II passes through a resistor R2Charging the pulse forming line TL3 and the pulse forming line TL4, and receiving a control Signal of a trigger control system by a pulse generating system II3_1…, control Signal Signal3_nControlling a semiconductor switching tube S3_1…, semiconductor switch tube S3_nIs turned on to pass through the switch SW7And outputting the pulse to an output port.
When the control signal IN3Control switch SW5Off, control signal IN4Control switch SW6When closed, the pulse generating system II passes through a capacitor C(n+1)…, capacitor C2nA pulse is formed. Control signal OUT3Control switch SW7Open, control signal OUT4Control switch SW8Closed, pulse generating system II output capacitor C(n+1)…, capacitor C2nThe pulse formed. I input end of pulse generation system passes through device Z(n+1)…, device Z2nTo the capacitor C(n+1)…, capacitor C2nThe charging and pulse generation system II receives a control Signal of the trigger control system3_1…, control Signal Signal3_nControlling a semiconductor switching tube S3_1…, semiconductor switch tube S3_nThe conduction pulse generation system II receives a control Signal of the trigger control system4_(n+1)…, control Signal Signal4_2nControlling a semiconductor switching tube S4_(n+1)…, semiconductor switch tube S4_2nIs turned off so as to pass through the switch SW8And outputting the pulse to an output port.
The pulse generation system generates pulses and sends the pulses to the modular multi-level converter valve sub-module IGBT.
Further, the pulse generation system comprises a pulse generation system I and a pulse generation system II.
Pulse generating system I and capacitor Cdiv1And (4) connecting in parallel. Pulse generating system II and capacitor Cdiv2And (4) connecting in parallel.
The circuit structure of the pulse generating system I is as follows:
the input end of the pulse generating system I is an a end and a b end respectively, and the output end is a d end and an e end respectively.
a terminal is sequentially connected with a switch SW in series1Resistance R1Pulse forming line TL1, pulse forming line TL2 and switch SW3And then accessing the e terminal.
a terminal is sequentially connected with a switch SW in series1Resistance R1Pulse forming line TL1 and switch SW3And then the d end is accessed.
a terminal is sequentially connected with a switch SW in series1And a resistance R1Rear-connected semiconductor switch tube S1_1Of the substrate.
Semiconductor switch tube S1_iSource electrode of the series semiconductor switch tube S1_(i+1)Of the substrate.
i＝1,2，…，n-1。
Semiconductor switch tube S1_nThe source series pulse of (a) forms line TL 1.
Semiconductor switch tube S1_1…, semiconductor switch tube S1_nIs in signal connection with the trigger control system.
End b is sequentially connected with a switch SW in series1And a pulse forming line TL 1.
End b is sequentially connected with a switch SW in series1And a semiconductor switching tube S1_nOf the substrate.
a terminal is sequentially connected with a switch SW in series2Device Z1…, device ZnBack series semiconductor switch tube S2_nOf the substrate.
a terminal is sequentially connected with a switch SW in series2Device Z1…, device ZjCapacitor CjRear-connected semiconductor switch tube S2_jOf the substrate. j is 1,2, …, n.
a terminal is sequentially connected with a switch SW in series2Device Z1Capacitor C1And a switch SW4And then the d end is accessed.
b terminal series semiconductor switch tube S2_(n+1)Of the substrate.
Semiconductor switch tube S2_(n+j)Drain electrode of the series connection semiconductor switch tube S2_jOf the substrate.
Semiconductor switch tube S2_jDrain series device ZjAnd device Zj+1One end connected to each other.
Semiconductor switch tube S2_2nDrain series switch SW4And then accessing the e terminal.
Semiconductor switch tube S2_1…, semiconductor switch tube S2_2nIs in signal connection with the trigger control system.
The circuit structure of the pulse generating system II is as follows:
the input end of the pulse generating system II is an f end and a g end respectively, and the output end of the pulse generating system II is an h end and a k end respectively.
f terminal is connected with switch SW in series5Resistance R2Pulse forming line TL3, pulse forming line TL4 and switch SW7And then accessing the k terminal.
f terminal is connected with switch SW in series5Resistance R2Pulse forming line TL3 and switch SW7And then accessing the h end.
The f end is sequentially connected with a switch SW5 and a resistor R in series2Rear-connected semiconductor switch tube S3_1Of the substrate.
Semiconductor switch tube S3_iSource electrode of the series semiconductor switch tube S3_(i+1)Of the substrate.
i＝1,2，…，n-1。
Semiconductor switch tube S3_nThe source series pulse of (a) forms line TL 3.
Semiconductor switch tube S3_1…, semiconductor switch tube S3_nIs in signal connection with the trigger control system.
The g end is sequentially connected with a switch SW in series5And a pulse forming line TL 3.
The g end is sequentially connected with a switch SW in series5And a semiconductor switching tube S3_nOf the substrate.
f terminal is connected with switch SW in series6And a deviceZ(n+1)…, device Z2nBack series semiconductor switch tube S4_nOf the substrate.
f terminal is connected with switch SW in series6Device Z(n+1)…, device ZmCapacitor CmRear-connected semiconductor switch tube S4_jOf the substrate. N, n +1, …, m.
f terminal is connected with switch SW in series6Device Z(n+1)Capacitor C(n+1)And a switch SW8And then accessing the h end.
g-terminal series semiconductor switch tube S4_(n+1)Of the substrate.
Semiconductor switch tube S4_(n+j)Drain electrode of the series connection semiconductor switch tube S4_jOf the substrate.
Semiconductor switch tube S4_jDrain series device Z(n+m)And device Z(n+m+1)One end connected to each other.
Semiconductor switch tube S4_2nDrain series switch SW8And then accessing the k terminal.
Semiconductor switch tube S4_1…, semiconductor switch tube S4_2nIs in signal connection with the trigger control system.
Further, the device Z1…, device Z2nBe a resistor, inductor or semiconductor diode.
The fault detection system acquires a response signal U of a modular multi-level sub-converter valve sub-module IGBT gate pole coupled under pulse excitationkAnd sent to the data processing system.
Further, the fault detection system comprises an overvoltage protection unit, a signal acquisition unit and a filtering unit.
Further, the overvoltage protection includes, but is not limited to, a zener diode.
Furthermore, the number of channels of the signal acquisition device is not less than 2, the sampling rate is not less than 200MS/s, and the number of sampling bits is not less than 12 bits.
Further, the data processing system comprises a DSP chip with the model of DSP28335 or higher, and comprises peripheral circuits such as but not limited to a crystal oscillator, a resistor, a capacitor, an inductor, a diode and the like, a power supply and the like.
Further, the control trigger system comprises an FPGA chip with the model of ALTERA Cyclone IV series or higher specification, and comprises peripheral circuits such as but not limited to a crystal oscillator, a resistor, a capacitor, an inductor, a diode and the like, a power supply and the like.
The overvoltage protection unit protects the signal acquisition device, the filtering unit, the data processing system and the trigger control system from being impacted by the gate coupling overvoltage of the modular multi-level converter valve sub-module IGBT.
The signal acquisition unit acquires a response signal U of the IGBT gate pole of the modular multi-level sub-converter valve sub-module coupled under pulse excitationk。
The filtering unit filters the response signal and filters the filtered response signal UkAnd sending to a data processing system.
The IGBT module comprises an upper bridge arm IGBT T1And a lower arm IGBT T2。
The data processing system responds to the signal UkAnd processing and judging to obtain the fault type.
And the data processing system generates a fault type signal according to the fault type and sends the fault type signal to the trigger control system.
Further, the data processing system responds to the signal UkThe main steps of processing and judging the fault type are as follows:
1) the data processing system receives response signals U at the time k and the time k +1kAnd Uk+1. k is initially 0.
2) Calculating the average response voltage ukNamely:
in the formula,. DELTA.T is time.
3) Determining the average response voltage ukWhether or not less than a threshold value epsilon1If yes, let voltage U'j＝UkAnd proceeds to step 4. If not, orderk + k +1, and return to step 1.
4) And judging whether k is greater than N, if not, enabling k + k +1, and returning to the step 1. If yes, go to step 5. N is the total response time. j is the response sequence number.
5) Calculating the average voltage
Figure BDA0002181964470000142
Namely:
Figure BDA0002181964470000143
in the formula, NjIs the number of responses, j is the response number, voltage U'jSatisfying a threshold epsilon for the average response voltage1The corresponding time k is the response voltage.
6) Determining the average voltage
Figure BDA0002181964470000151
Whether or not less than a threshold value epsilon2And if so, judging that the IGBT of the modular multi-level converter valve sub-module is in short-circuit fault. If not, go to step 7.
7) Judgment of
Figure BDA0002181964470000152
And judging whether the modular multi-level converter valve sub-module IGBT is in an open-circuit fault state or not, if not, judging that the modular multi-level converter valve sub-module IGBT is in the fault state, and if so, judging that the modular multi-level converter valve sub-module IGBT is in the open-circuit fault state. Epsilon3Is a failure determination threshold.
Example 2:
referring to fig. 13 and 14, a method of the modular multi-level converter valve sub-module IGBT fault detection system mainly includes the following steps:
1) the self-energy-taking system supplies power to the pulse generation system. The pulse generation system generates pulses and sends the pulses to the modular multi-level converter valve sub-module IGBT.
2) The fault detection system acquires a response signal U of a modular multi-level sub-converter valve sub-module IGBT gate pole coupled under pulse excitationkAnd sent to the data processing systemAnd (4) a system.
3) The data processing system responds to the signal UkAnd processing and judging to obtain the fault type.
And the data processing system generates a fault type signal according to the fault type and sends the fault type signal to the trigger control system.
4) And the trigger control system generates a control signal according to the fault type signal of the data processing system and sends the control signal to the pulse generation system so as to control the pulse parameter generated by the pulse generation system, and the step 1 is returned to continue to detect the IGBT fault of the modular multi-level converter valve sub-module.
Example 3:
the modular multilevel converter valve sub-module IGBT fault detection system mainly comprises a self-energy-taking system, a pulse generation system, a trigger control system, a fault detection system and a data processing system;
energy storage capacitor C of self-energy-taking system and modular multi-level converter valve sub-module0Parallel connection; energy storage capacitor C0Discharging the self-energy-taking system;
the self-energy-taking system supplies power to the pulse generation system;
the trigger control system generates a control signal according to the fault type signal of the data processing system and sends the control signal to the pulse generation system so as to control the pulse parameter generated by the pulse generation system;
the pulse generation system generates pulses and sends the pulses to the modular multi-level converter valve sub-module IGBT;
the fault detection system acquires a response signal U of a modular multi-level sub-converter valve sub-module IGBT gate pole coupled under pulse excitationkAnd sending to a data processing system;
the data processing system responds to the signal UkProcessing and judging to obtain a fault type;
and the data processing system generates a fault type signal according to the fault type and sends the fault type signal to the trigger control system.
Example 4:
the modular multilevel converter valve sub-module IGBT fault detection system has the main structure shown in embodiment 3, wherein the pulse generation system comprises a pulse generation system I and a pulse generation system II.
Pulse generating system I and capacitor Cdiv1And (4) connecting in parallel. Pulse generating system II and capacitor Cdiv2And (4) connecting in parallel.
The circuit structure of the pulse generating system I is as follows:
the input end of the pulse generating system I is an a end and a b end respectively, and the output end is a d end and an e end respectively.
a terminal is sequentially connected with a switch SW in series1Resistance R1Pulse forming line TL1, pulse forming line TL2 and switch SW3And then accessing the e terminal.
a terminal is sequentially connected with a switch SW in series1Resistance R1Pulse forming line TL1 and switch SW3And then the d end is accessed.
a terminal is sequentially connected with a switch SW in series1And a resistance R1Rear-connected semiconductor switch tube S1_1Of the substrate.
Semiconductor switch tube S1_iSource electrode of the series semiconductor switch tube S1_(i+1)Of the substrate. i is 1,2, …, n-1.
Semiconductor switch tube S1_nThe source series pulse of (a) forms line TL 1.
Semiconductor switch tube S1_1…, semiconductor switch tube S1_nIs in signal connection with the trigger control system.
End b is sequentially connected with a switch SW in series1And a pulse forming line TL 1.
End b is sequentially connected with a switch SW in series1And a semiconductor switching tube S1_nOf the substrate.
a terminal is sequentially connected with a switch SW in series2Device Z1…, device ZnBack series semiconductor switch tube S2_nOf the substrate.
a terminal is sequentially connected with a switch SW in series2Device Z1…, device ZjCapacitor CjRear-connected semiconductor switch tube S2_jOf the substrate. j is 1,2, …, n.
a terminal is connected in series with a switchSW2Device Z1Capacitor C1And a switch SW4And then the d end is accessed.
b terminal series semiconductor switch tube S2_(n+1)Of the substrate.
Semiconductor switch tube S2_(n+j)Drain electrode of the series connection semiconductor switch tube S2_jOf the substrate.
Semiconductor switch tube S2_jDrain series device ZjAnd device Zj+1One end connected to each other.
Semiconductor switch tube S2_2nDrain series switch SW4And then accessing the e terminal.
Semiconductor switch tube S2_1…, semiconductor switch tube S2_2nIs in signal connection with the trigger control system.
The circuit structure of the pulse generating system II is as follows:
the input end of the pulse generating system II is an f end and a g end respectively, and the output end of the pulse generating system II is an h end and a k end respectively.
f terminal is connected with switch SW in series5Resistance R2Pulse forming line TL3, pulse forming line TL4 and switch SW7And then accessing the k terminal.
f terminal is connected with switch SW in series5Resistance R2Pulse forming line TL3 and switch SW7And then accessing the h end.
The f end is sequentially connected with a switch SW5 and a resistor R in series2Rear-connected semiconductor switch tube S3_1Of the substrate.
Semiconductor switch tube S3_iSource electrode of the series semiconductor switch tube S3_(i+1)Of the substrate. i is 1,2, …, n-1.
Semiconductor switch tube S3_nThe source series pulse of (a) forms line TL 3.
Semiconductor switch tube S3_1…, semiconductor switch tube S3_nIs in signal connection with the trigger control system.
The g end is sequentially connected with a switch SW in series5And a pulse forming line TL 3.
The g end is sequentially connected with a switch SW in series5And a semiconductor switching tube S3_nOf the substrate.
f terminal is connected with switch SW in series6Device Z(n+1)…, device Z2nBack series semiconductor switch tube S4_nOf the substrate.
f terminal is connected with switch SW in series6Device Z(n+1)…, device ZmCapacitor CmRear-connected semiconductor switch tube S4_jOf the substrate. N, n +1, …, m.
f terminal is connected with switch SW in series6Device Z(n+1)Capacitor C(n+1)And a switch SW8And then accessing the h end.
g-terminal series semiconductor switch tube S4_(n+1)Of the substrate.
Semiconductor switch tube S4_(n+j)Drain electrode of the series connection semiconductor switch tube S4_jOf the substrate.
Semiconductor switch tube S4_jDrain series device Z(n+m)And device Z(n+m+1)One end connected to each other.
Semiconductor switch tube S4_2nDrain series switch SW8And then accessing the k terminal.
Semiconductor switch tube S4_1…, semiconductor switch tube S4_2nIs in signal connection with the trigger control system.
Further, the device Z1…, device Z2nBe a resistor, inductor or semiconductor diode.
Example 5:
the modular multilevel converter valve sub-module IGBT fault detection system has the main structure shown in the embodiment 3, wherein the trigger control system sends a control signal to the pulse generation system. Wherein the control signal IN1Control switch SW1On/off of, control signal IN2Control switch SW2On/off of, control signal IN3Control switch SW5On/off of, control signal IN4Control switch SW6On/off of, control signal OUT1Control switch SW3On/off of, control signal OUT2Control switch SW4On/off of, control signal OUT3Control switch SW7On/off of, control signal OUT4Control switch SW8On/off of (3), control Signal Signal1_1…, control Signal Signal1_nControlling a semiconductor switching tube S1_1…, semiconductor switch tube S1_nOn/off of (3), control Signal Signal2_1…, control Signal Signal2_(2n)Controlling a semiconductor switching tube S2_1…, semiconductor switch tube S2_2nOn/off of Signal3_1、…、Signal3_nControlling a semiconductor switch S3_1…, semiconductor switch tube S3_nOn/off of (3), control Signal Signal4_1…, control Signal Signal4_(2n)Controlling a semiconductor switching tube S4_1…, semiconductor switch tube S4_2nMake and break of (2).
When the control signal IN1Control switch SW1Closed, control signal IN2Control switch SW2When switched off, the pulse generating system I forms a pulse by means of the pulse forming line TL1 and the pulse forming line TL 2. Control signal OUT1Control switch SW3Closed, control signal OUT2Control switch SW4And the pulse generating system I is switched off and outputs pulses formed by the pulse forming line TL1 and the pulse forming line TL 2. The input end of the pulse generating system I passes through a resistor R1Charging the pulse forming line TL1 and the pulse forming line TL2, and receiving a control Signal of a trigger control system by a pulse generating system I1_1…, control Signal Signal1_nControlling a semiconductor switching tube S1_1…, semiconductor switch tube S1_nIs turned on to pass through the switch SW3And outputting the pulse to an output port. When the control signal IN1Control switch SW1Off, control signal IN2Control switch SW2When closed, the pulse generating system I passes through a capacitor C1…, capacitor CnA pulse is formed. Control signal OUT1Control switch SW3Open, control signal OUT2Control switch SW4Closed, pulse generating system I output capacitor C1…, capacitor CnThe pulse formed. I input end of pulse generation system passes through device Z1…, device ZnTo the capacitor C1…, capacitor CnThe charging and pulse generation system I receives a control Signal of a trigger control system2_1…, control Signal Signal2_nControlling a semiconductor switching tube S2_1…, semiconductor switch tube S2_nThe conduction pulse generation system I receives a control Signal of a trigger control system2_(n+1)…, control Signal Signal2_2nControlling a semiconductor switching tube S2_(n+1)…, semiconductor switch tube S2_2nIs turned off so as to pass through the switch SW4And outputting the pulse to an output port.
When the control signal IN3Control switch SW5Closed, control signal IN4Control switch SW6When switched off, the pulse generating system II pulses through the pulse forming line TL3 and the pulse forming line TL 4. Control signal OUT3Control switch SW7Closed, control signal OUT4Control switch SW8And the pulse generating system II is switched off and outputs pulses formed by the pulse forming line TL3 and the pulse forming line TL 4. The input end of the pulse generation system II passes through a resistor R2Charging the pulse forming line TL3 and the pulse forming line TL4, and receiving a control Signal of a trigger control system by a pulse generating system II3_1…, control Signal Signal3_nControlling a semiconductor switching tube S3_1…, semiconductor switch tube S3_nIs turned on to pass through the switch SW7And outputting the pulse to an output port.
When the control signal IN3Control switch SW5Off, control signal IN4Control switch SW6When closed, the pulse generating system II passes through a capacitor C(n+1)…, capacitor C2nA pulse is formed. Control signal OUT3Control switch SW7Open, control signal OUT4Control switch SW8Closed, pulse generating system II output capacitor C(n+1)…, capacitor C2nThe pulse formed. I input end of pulse generation system passes through device Z(n+1)…, device Z2nTo the capacitor C(n+1)…, capacitor C2nCharging, pulsingThe generation system II receives a control Signal of the trigger control system3_1…, control Signal Signal3_nControlling a semiconductor switching tube S3_1…, semiconductor switch tube S3_nThe conduction pulse generation system II receives a control Signal of the trigger control system4_(n+1)…, control Signal Signal4_2nControlling a semiconductor switching tube S4_(n+1)…, semiconductor switch tube S4_2nIs turned off so as to pass through the switch SW8And outputting the pulse to an output port.
Example 6:
a modular multilevel converter valve submodule IGBT fault detection system is mainly structurally shown in embodiment 3, wherein a data processing system responds to a response signal UkThe main steps of processing and judging the fault type are as follows:
1) the data processing system receives response signals U at the time k and the time k +1kAnd Uk+1. k is initially 0.
2) Calculating the average response voltage ukNamely:
Figure BDA0002181964470000201
in the formula,. DELTA.T is time.
3) Determining the average response voltage ukWhether or not less than a threshold value epsilon1If yes, let voltage U'j＝UkAnd proceeds to step 4. If not, enabling k + k +1, and returning to the step 1.
4) And judging whether k is greater than N, if not, enabling k + k +1, and returning to the step 1. If yes, go to step 5.
5) Calculating the average voltage
Figure BDA0002181964470000202
Namely:
Figure BDA0002181964470000203
6) determining the average voltageWhether or not less than a threshold value epsilon2And if so, judging that the IGBT of the modular multi-level converter valve sub-module is in short-circuit fault. If not, go to step 7.
7) Judgment of
Figure BDA0002181964470000205
And judging whether the modular multi-level converter valve sub-module IGBT is in an open-circuit fault state or not, if not, judging that the modular multi-level converter valve sub-module IGBT is in the fault state, and if so, judging that the modular multi-level converter valve sub-module IGBT is in the open-circuit fault state.

Claims (10)

1. Modularization multi-level converter valve submodule piece IGBT fault detection system which characterized in that: the system mainly comprises the self-energy-taking system, a pulse generation system, a trigger control system, a fault detection system and a data processing system.
Energy storage capacitor C of self-energy-taking system and modular multi-level converter valve sub-module0Parallel connection; energy storage capacitor C0Discharging the self-energy-taking system;
the self-energy-taking system supplies power to the pulse generation system;
the trigger control system generates a control signal according to the fault type signal of the data processing system and sends the control signal to the pulse generation system so as to control the pulse parameter generated by the pulse generation system;
the pulse generation system generates pulses and sends the pulses to the modular multi-level converter valve sub-module IGBT;
the fault detection system acquires a response signal U of a modular multi-level sub-converter valve sub-module IGBT gate pole coupled under pulse excitationkAnd sending to a data processing system;
the data processing system responds to the signal UkProcessing and judging to obtain a fault type;
and the data processing system generates a fault type signal according to the fault type and sends the fault type signal to the trigger control system.
2. The modular multilevel converter valve sub-module IGBT fault detection system of claim 1, characterized in that: the pulse excitation width range is [10ns, 1000ns ], the frequency range is [1Hz, 1000Hz ], and the maximum output amplitude is 10 kV.
3. The modular multilevel converter valve sub-module IGBT fault detection system of claim 1, characterized in that: the fault detection system comprises an overvoltage protection unit, a signal acquisition unit and a filtering unit;
the overvoltage protection unit protects the signal acquisition device, the filtering unit, the data processing system and the trigger control system from being impacted by the gate coupling overvoltage of the modular multi-level converter valve sub-module IGBT;
the signal acquisition unit acquires a response signal U of the IGBT gate pole of the modular multi-level sub-converter valve sub-module coupled under pulse excitationk；
The filtering unit filters the response signal and filters the filtered response signal UkAnd sending to a data processing system.
4. The modular multilevel converter valve sub-module IGBT fault detection system according to claim 1 or 2, characterized in that: the self-energy-taking system comprises a capacitor C connected in seriesdiv1And a capacitor Cdiv2。
5. The modular multilevel converter valve sub-module IGBT fault detection system of claim 1, characterized in that: the pulse generation system comprises a pulse generation system I and a pulse generation system II;
pulse generating system I and capacitor Cdiv1Parallel connection; pulse generating system II and capacitor Cdiv2Parallel connection;
the circuit structure of the pulse generating system I is as follows:
the input end of the pulse generating system I is respectively an a end and a b end, and the output end is respectively a d end and an e end;
a terminal is sequentially connected with a switch SW in series1Resistance R1Pulse forming line TL1, pulse formingLine TL2 and switch SW3Then accessing an e end;
a terminal is sequentially connected with a switch SW in series1Resistance R1Pulse forming line TL1 and switch SW3Then accessing the d end;
a terminal is sequentially connected with a switch SW in series1And a resistance R1Rear-connected semiconductor switch tube S1_1A drain electrode of (1);
semiconductor switch tube S1_iSource electrode of the series semiconductor switch tube S1_(i+1)A drain electrode of (1); 1,2, …, n-1;
semiconductor switch tube S1_nThe source series pulse of (a) forms a line TL 1;
semiconductor switch tube S1_1…, semiconductor switch tube S1_nThe grid is connected with a trigger control system through signals;
end b is sequentially connected with a switch SW in series1And pulse forming line TL 1;
end b is sequentially connected with a switch SW in series1And a semiconductor switching tube S1_nA source electrode of (a);
a terminal is sequentially connected with a switch SW in series2Device Z1…, device ZnBack series semiconductor switch tube S2_nA drain electrode of (1);
a terminal is sequentially connected with a switch SW in series2Device Z1…, device ZjCapacitor CjRear-connected semiconductor switch tube S2_jA source electrode of (a); j is 1,2, …, n;
a terminal is sequentially connected with a switch SW in series2Device Z1Capacitor C1And a switch SW4Then accessing the d end;
b terminal series semiconductor switch tube S2_(n+1)A source electrode of (a);
semiconductor switch tube S2_(n+j)Drain electrode of the series connection semiconductor switch tube S2_jA source electrode of (a);
semiconductor switch tube S2_jDrain series device ZjAnd device Zj+1One end connected with the other end;
semiconductor switch tube S2_2nDrain series switch SW4Then accessing an e end;
semiconductor switch tubeS2_1…, semiconductor switch tube S2_2nThe grid is connected with a trigger control system through signals;
the circuit structure of the pulse generating system II is as follows:
the input end of the pulse generating system II is respectively an f end and a g end, and the output end is respectively an h end and a k end;
f terminal is connected with switch SW in series5Resistance R2Pulse forming line TL3, pulse forming line TL4 and switch SW7Then accessing a k end;
f terminal is connected with switch SW in series5Resistance R2Pulse forming line TL3 and switch SW7Then accessing the h end;
the f end is sequentially connected with a switch SW5 and a resistor R in series2Rear-connected semiconductor switch tube S3_1A drain electrode of (1);
semiconductor switch tube S3_iSource electrode of the series semiconductor switch tube S3_(i+1)A drain electrode of (1); 1,2, …, n-1;
semiconductor switch tube S3_nThe source series pulse of (a) forms a line TL 3;
semiconductor switch tube S3_1…, semiconductor switch tube S3_nThe grid is connected with a trigger control system through signals;
the g end is sequentially connected with a switch SW in series5And pulse forming line TL 3;
the g end is sequentially connected with a switch SW in series5And a semiconductor switching tube S3_nA source electrode of (a);
f terminal is connected with switch SW in series6Device Z(n+1)…, device Z2nBack series semiconductor switch tube S4_nA drain electrode of (1);
f terminal is connected with switch SW in series6Device Z(n+1)…, device ZmCapacitor CmRear-connected semiconductor switch tube S4_jA source electrode of (a); n, n +1, …, m;
f terminal is connected with switch SW in series6Device Z(n+1)Capacitor C(n+1)And a switch SW8Then accessing the h end;
g-terminal series semiconductor switch tube S4_(n+1)A source electrode of (a);
semiconductor switch tube S4_(n+j)Drain electrode of the series connection semiconductor switch tube S4_jA source electrode of (a);
semiconductor switch tube S4_jDrain series device Z(n+m)And device Z(n+m+1)One end connected with the other end;
semiconductor switch tube S4_2nDrain series switch SW8Then accessing a k end;
semiconductor switch tube S4_1…, semiconductor switch tube S4_2nIs in signal connection with the trigger control system.
6. The modular multilevel converter valve sub-module IGBT fault detection system of claim 5, characterized in that: the device Z1…, device Z2nBe a resistor, inductor or semiconductor diode.
7. The modular multilevel converter valve sub-module IGBT fault detection system of claim 1, characterized in that: the trigger control system sends a control signal to the pulse generation system; wherein the control signal IN1Control switch SW1On/off of, control signal IN2Control switch SW2On/off of, control signal IN3Control switch SW5On/off of, control signal IN4Control switch SW6On/off of, control signal OUT1Control switch SW3On/off of, control signal OUT2Control switch SW4On/off of, control signal OUT3Control switch SW7On/off of, control signal OUT4Control switch SW8On/off of (3), control Signal Signal1_1…, control Signal Signal1_nControlling a semiconductor switching tube S1_1…, semiconductor switch tube S1_nOn/off of (3), control Signal Signal2_1…, control Signal Signal2_(2n)Controlling a semiconductor switching tube S2_1…, semiconductor switch tube S2_2nOn/off of Signal3_1、…、Signal3_nControlling a semiconductor switch S3_1…, semiconductor switch tube S3_nOn/off of (3), control Signal Signal4_1…, control Signal Signal4_(2n)Controlling a semiconductor switching tube S4_1…, semiconductor switch tube S4_2nMake-and-break;
when the control signal IN1Control switch SW1Closed, control signal IN2Control switch SW2When the circuit is disconnected, the pulse generating system I forms pulses through a pulse forming line TL1 and a pulse forming line TL 2; control signal OUT1Control switch SW3Closed, control signal OUT2Control switch SW4The pulse generating system I outputs pulses formed by a pulse forming line TL1 and a pulse forming line TL2 after being disconnected; the input end of the pulse generating system I passes through a resistor R1Charging the pulse forming line TL1 and the pulse forming line TL2, and receiving a control Signal of a trigger control system by a pulse generating system I1_1…, control Signal Signal1_nControlling a semiconductor switching tube S1_1…, semiconductor switch tube S1_nIs turned on to pass through the switch SW3Outputting a pulse to an output port;
when the control signal IN1Control switch SW1Off, control signal IN2Control switch SW2When closed, the pulse generating system I passes through a capacitor C1…, capacitor CnForming a pulse; control signal OUT1Control switch SW3Open, control signal OUT2Control switch SW4Closed, pulse generating system I output capacitor C1…, capacitor CnThe pulse formed; i input end of pulse generation system passes through device Z1…, device ZnTo the capacitor C1…, capacitor CnThe charging and pulse generation system I receives a control Signal of a trigger control system2_1…, control Signal Signal2_nControlling a semiconductor switching tube S2_1…, semiconductor switch tube S2_nThe conduction pulse generation system I receives a control Signal of a trigger control system2_(n+1)…, control Signal Signal2_2nControlling a semiconductor switching tube S2_(n+1)…, semiconductorSwitch tube S2_2nIs turned off so as to pass through the switch SW4Outputting a pulse to an output port;
when the control signal IN3Control switch SW5Closed, control signal IN4Control switch SW6When the circuit is disconnected, the pulse generating system II forms pulses through a pulse forming line TL3 and a pulse forming line TL 4; control signal OUT3Control switch SW7Closed, control signal OUT4Control switch SW8The pulse generating system II is disconnected and outputs pulses formed by a pulse forming line TL3 and a pulse forming line TL 4; the input end of the pulse generation system II passes through a resistor R2Charging the pulse forming line TL3 and the pulse forming line TL4, and receiving a control Signal of a trigger control system by a pulse generating system II3_1…, control Signal Signal3_nControlling a semiconductor switching tube S3_1…, semiconductor switch tube S3_nIs turned on to pass through the switch SW7Outputting a pulse to an output port;
when the control signal IN3Control switch SW5Off, control signal IN4Control switch SW6When closed, the pulse generating system II passes through a capacitor C(n+1)…, capacitor C2nForming a pulse; control signal OUT3Control switch SW7Open, control signal OUT4Control switch SW8Closed, pulse generating system II output capacitor C(n+1)…, capacitor C2nThe pulse formed; i input end of pulse generation system passes through device Z(n+1)…, device Z2nTo the capacitor C(n+1)…, capacitor C2nThe charging and pulse generation system II receives a control Signal of the trigger control system3_1…, control Signal Signal3_nControlling a semiconductor switching tube S3_1…, semiconductor switch tube S3_nThe conduction pulse generation system II receives a control Signal of the trigger control system4_(n+1)…, control Signal Signal4_2nControlling a semiconductor switching tube S4_(n+1)…, semiconductor switch tube S4_2nIs turned off so as to pass through the switch SW8And outputting the pulse to an output port.
8. The modular multilevel converter valve sub-module IGBT fault detection system of claim 1, wherein the IGBT module comprises an upper bridge arm IGBT T1And a lower arm IGBT T2。
9. The modular multilevel converter valve sub-module IGBT fault detection system of claim 1, characterized in that the data processing system responds to signal UkThe main steps of processing and judging the fault type are as follows:
1) the data processing system receives response signals U at the time k and the time k +1kAnd Uk+1(ii) a k is initially 0;
2) calculating the average response voltage ukNamely:
Figure FDA0002181964460000061
wherein Δ T is time;
3) determining the average response voltage ukWhether or not less than a threshold value epsilon1If yes, let voltage U'j＝UkAnd entering step 4; if not, enabling k + k +1, and returning to the step 1;
4) judging whether k is greater than N, if not, making k + k +1, and returning to the step 1; if yes, entering step 5; n is the total response time;
5) calculating the average voltage
Figure FDA0002181964460000062
Namely:
Figure FDA0002181964460000063
in the formula, NjIs the number of responses; j is a response serial number;
6) determining the average voltage
Figure FDA0002181964460000064
Whether or not less than a threshold value epsilon2If yes, judging that the modular multilevel converter valve sub-module IGBT is in short circuit fault; if not, entering step 7;
7) judgment of
Figure FDA0002181964460000065
Whether the current converter valve is in an open-circuit fault state or not is judged, if not, the modular multi-level converter valve sub-module IGBT is judged to have no fault, and if so, the modular multi-level converter valve sub-module IGBT is judged to be in an open-circuit fault state; vampIs the breakdown voltage.
10. Method of modular multilevel converter valve sub-module IGBT fault detection system according to claims 1 to 9, characterized in that it mainly comprises the following steps:
1) the self-energy-taking system supplies power to the pulse generation system; the pulse generation system generates pulses and sends the pulses to the modular multi-level converter valve sub-module IGBT;
2) the fault detection system acquires a response signal U of a modular multi-level sub-converter valve sub-module IGBT gate pole coupled under pulse excitationkAnd sending to a data processing system;
3) the data processing system responds to the signal UkProcessing and judging to obtain a fault type;
the data processing system generates a fault type signal according to the fault type and sends the fault type signal to the trigger control system;
4) and the trigger control system generates a control signal according to the fault type signal of the data processing system and sends the control signal to the pulse generation system so as to control the pulse parameter generated by the pulse generation system, and the step 1 is returned to continue to detect the IGBT fault of the modular multi-level converter valve sub-module.
CN201910799671.1A 2019-08-28 2019-08-28 Modular multilevel converter valve submodule IGBT fault detection system and method Active CN110726915B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910799671.1A CN110726915B (en) 2019-08-28 2019-08-28 Modular multilevel converter valve submodule IGBT fault detection system and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910799671.1A CN110726915B (en) 2019-08-28 2019-08-28 Modular multilevel converter valve submodule IGBT fault detection system and method

Publications (2)

Publication Number Publication Date
CN110726915A true CN110726915A (en) 2020-01-24
CN110726915B CN110726915B (en) 2020-08-18

Family

ID=69218782

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910799671.1A Active CN110726915B (en) 2019-08-28 2019-08-28 Modular multilevel converter valve submodule IGBT fault detection system and method

Country Status (1)

Country Link
CN (1) CN110726915B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112630596A (en) * 2020-12-15 2021-04-09 重庆大学 Comprehensive diagnosis method for open-circuit fault of IGBT device of wind power converter
CN112986784A (en) * 2021-04-21 2021-06-18 国网江西省电力有限公司电力科学研究院 Abnormity identification method and device for high-power welding type IGBT module

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2001120A3 (en) * 2007-06-08 2010-11-24 Korean Electro Technology Research Institute Controller of doubly-fed induction generator
CN102118019A (en) * 2011-01-14 2011-07-06 中国电力科学研究院 Modularized multi-level converter sub-module control and protection method
CN102545655A (en) * 2012-02-10 2012-07-04 徐查庆 Current-sharing controller for direct current parallel technology of variable frequency generator set
CN104201871A (en) * 2014-08-26 2014-12-10 河海大学 FPGA (Field Programmable Gate Array) based high-voltage series connection (Insulated Gate Bipolar Transistor) gate driving unit and method
CN104600758A (en) * 2014-12-29 2015-05-06 国家电网公司 Self energy taking device of high voltage direct current circuit breaker and implementing method thereof
CN106357009A (en) * 2016-10-31 2017-01-25 国网江苏省电力公司电力科学研究院 Self-powered supply unit used for electric power device state detection sensor
CN107370393A (en) * 2017-06-29 2017-11-21 全球能源互联网研究院 A kind of Modularized multi-level converter sub-module topological structure and its guard method
CN209264889U (en) * 2018-11-01 2019-08-16 国网安徽省电力有限公司六安供电公司 A kind of self-energizing for insulated overhead line and fault detection integrated apparatus

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2001120A3 (en) * 2007-06-08 2010-11-24 Korean Electro Technology Research Institute Controller of doubly-fed induction generator
CN102118019A (en) * 2011-01-14 2011-07-06 中国电力科学研究院 Modularized multi-level converter sub-module control and protection method
CN102545655A (en) * 2012-02-10 2012-07-04 徐查庆 Current-sharing controller for direct current parallel technology of variable frequency generator set
CN104201871A (en) * 2014-08-26 2014-12-10 河海大学 FPGA (Field Programmable Gate Array) based high-voltage series connection (Insulated Gate Bipolar Transistor) gate driving unit and method
CN104600758A (en) * 2014-12-29 2015-05-06 国家电网公司 Self energy taking device of high voltage direct current circuit breaker and implementing method thereof
CN106357009A (en) * 2016-10-31 2017-01-25 国网江苏省电力公司电力科学研究院 Self-powered supply unit used for electric power device state detection sensor
CN107370393A (en) * 2017-06-29 2017-11-21 全球能源互联网研究院 A kind of Modularized multi-level converter sub-module topological structure and its guard method
CN209264889U (en) * 2018-11-01 2019-08-16 国网安徽省电力有限公司六安供电公司 A kind of self-energizing for insulated overhead line and fault detection integrated apparatus

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
ZIHENG LI等: "Composite fault detection and diagnosis for IGBT and current sensor in CRH2 through modified EEMD and KPCA methods", 《PROCEEDINGS OF THE 38TH CHINESE CONTROL CONFERENCE》 *
李翠，等: "模块化多电平换流器的子模块开路故障检测方法", 《中国电机工程学报》 *
梁宝明，等: "集成IGBT驱动器的故障检测与故障模式识别", 《船电技术》 *
胡亮灯，等: "大功率IGBT的短路故障检测", 《电工技术学报》 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112630596A (en) * 2020-12-15 2021-04-09 重庆大学 Comprehensive diagnosis method for open-circuit fault of IGBT device of wind power converter
CN112630596B (en) * 2020-12-15 2024-06-11 重庆大学 Comprehensive diagnosis method for open-circuit faults of IGBT device of wind power converter
CN112986784A (en) * 2021-04-21 2021-06-18 国网江西省电力有限公司电力科学研究院 Abnormity identification method and device for high-power welding type IGBT module

Also Published As

Publication number Publication date
CN110726915B (en) 2020-08-18

Similar Documents

Publication Publication Date Title
CN104155587B (en) System and method for on-line detection of operating junction temperature of IGBT module
CN110726915B (en) Modular multilevel converter valve submodule IGBT fault detection system and method
CN103872918B (en) Digital Communication Link Between Secondary Side and Primary Side of Switching Power Converter
CN106443358B (en) Overhead power distribution network traveling wave positioning system based on signal injection device
CN105675957B (en) A kind of measurement of MMC module voltages and Fault Locating Method based on status monitoring
CN110765601A (en) IGBT junction temperature estimation method based on IGBT thermoelectric coupling model
US10381836B2 (en) Power converter communications
CN105322810B (en) Power conversion device and protection method thereof when current feedback signal is abnormal
CN104702253A (en) Method and apparatus for short circuit protection of power semiconductor switch
CN106501639B (en) Three-phase and four-line IT system electric energy quality monitoring and insulation fault line selection and location method
CN104837670B (en) For recognizing measurement apparatus and the application of method and measurement apparatus of the alternating voltage as the rail potential in DC railway system
US20200099334A1 (en) Method for detecting a contact fault in a photovoltaic system
CN203178354U (en) Three-phase AC electronic quantities detection circuit suitable for one-chip microcomputer
CN113644899B (en) Compensation method and compensation circuit for pulse current waveform
CN109194245B (en) Servo driver with input open-phase detection function and detection method thereof
US20150061388A1 (en) Method and device for monitoring a converter
CN109459633B (en) Method, device and system for diagnosing fault of thyristor-level circuit of direct-current transmission converter valve
CN208537681U (en) Synchronous rectification chip and its automatic detection circuit of power supply, circuit of synchronous rectification
CN206132911U (en) Overhead distributing net travelling wave positioning system based on signal injection device
CN107579595A (en) A kind of accumulator cell charging and discharging monitoring system based on switch cubicle
CN107328488A (en) Combined type trans system based on electric field induction
CN106226933A (en) Feedback circuit, heater circuit, display device and display system
CN106556779A (en) Train IT electric power system insulating properties on-line monitoring methods
CN105911327A (en) MMC module voltage measurement method having intelligent correction function
CN105515414A (en) Trigger pulse detection circuit for thyristor phase-shifted trigger rectifier

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant