CN110722692B - Method for controlling machining of BOW value of ground product - Google Patents
Method for controlling machining of BOW value of ground product Download PDFInfo
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- CN110722692B CN110722692B CN201910967920.3A CN201910967920A CN110722692B CN 110722692 B CN110722692 B CN 110722692B CN 201910967920 A CN201910967920 A CN 201910967920A CN 110722692 B CN110722692 B CN 110722692B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides a method for controlling the processing of BOW value of a grinding product, which comprises the following steps: cutting the 4-inch sapphire crystal bar into wafers by using a multi-wire cutting machine; sorting; and grinding and thinning. The processing method can effectively control the BOW value of the ground product, improve the yield of the product, better control the consistency of the BOW/WARP of the product after polishing, and better control the reverse growth of the MOCVD in the post-processing procedure, thereby increasing the wavelength hit rate of the product and reducing the wavelength STD.
Description
Technical Field
The invention provides a method for controlling the processing of BOW value of a grinding product.
Background
Sapphire is an ideal LED chip material as a hard material. As an ideal material of the LED, the material not only has good stability and can maintain stability at high temperature, but also has the characteristics of high hardness, high melting point, good light transmittance, excellent heat conductivity and electric insulation, stable chemical performance and the like, and is widely applied to precision instruments and meters, windows and reflectors of lasers, semiconductor epitaxial substrate materials, insulated integrated chips and the like. The performance and quality of each device depend on the precision processing quality of the substrate surface, so sapphire is mainly used as an ideal substrate material in the market at present.
However, in the actual production process, the grinding removal capacity is limited, and only the repair capacity is provided for the bow value and the warp value of the line cutting incoming material. After processing, the deviation of the values of bow and warp is large, and the performance of the product is influenced. Even directly affects the quality of the LED chip product (quantum efficiency, light extraction efficiency, product power, etc.). Control of the bow and warp values during the abrasive processing of the material is therefore particularly important.
In the initial stage of substrate material processing, due to lack of verification, surface division (positive and negative BOW surfaces) processing is not performed on a sliced wafer, so that the dispersion and difference of the BOW and warp values of products are large, the consistency is poor, the surface type is difficult to control, and even the processing yield is seriously influenced (the current substrate products all need to stipulate the positive and negative BOW requirements of the products).
By the processing method, the BOW value of the ground product can be effectively controlled, the product yield is improved, the consistency of the BOW/WARP of the polished product is better controlled, and the reverse growth of the MOCVD in the post-processing procedure is better controlled, so that the wavelength hit rate of the product is increased and the wavelength STD is reduced.
Disclosure of Invention
Grinding the front BOW surface of the product after the wire cutting upwards, wherein the BOW value of the product after grinding is uniformly larger, and the BOW of the product can be better reserved; and processing the negative BOW surface of the product after the wire cutting upwards, wherein the BOW value of the product after grinding can be effectively removed, and the BOW value is reduced greatly. The product BOW can be effectively controlled within a range by controlling the grinding BOW value.
The technical scheme of the invention is as follows:
a method for controlling the BOW value processing of a ground product comprises the following steps:
(1) cutting a 4-inch sapphire crystal bar into wafers by using a multi-wire cutting machine, wherein the cutting time is 5-20H, the linear velocity is 900-1800 m/min, the tension is 30-50N, the BOW of a cut product is controlled within 15um, the WARP is controlled within 50um, and the cutting thickness is 300um larger than the thickness of a final product;
(2) sorting:
sorting positive and negative BOW surfaces of the linear cutting wafer obtained in the step (1), wherein the negative BOW surfaces are uniformly placed towards the U surface of the material box;
(3) grinding and thinning:
(3.1) putting the sorted product in the step (2) in a planetary wheel of a grinding machine with the negative BOW surface facing upwards at the rotating speed of 10-30rpm and the pressure of 10-50g/cm2Removing amount is 50-100um, processing temperature is 18-25 ℃, processing is 30-90min, thickness tolerance of a product in a machine is within 5um, no scratch is caused, TTV is less than or equal to 3um, and BOW value of the product is controlled to be 0-2 um;
(3.2) placing the sorted product in the step (2) in a planetary wheel of a grinding machine with the front BOW side facing upwards, wherein the rotating speed is 10-30rpm, and the pressure is 10-50g/cm2Removing amount is 50-100um, processing temperature is 18-25 ℃, processing is 30-90min, thickness tolerance of a product in a machine is within 5um, no scratch is caused, TTV is less than or equal to 3um, and BOW value of the product is controlled to be 3-6 um;
the aim of controlling the BOW value of the finished product is effectively achieved by processing the ground positive/negative BOW in a split manner.
The invention has the beneficial effects that: by the processing method, the BOW value of the ground product can be effectively controlled, the product yield is improved, the consistency of the BOW/WARP of the polished product is better controlled, and the reverse growth of the MOCVD in the post-processing procedure is better controlled, so that the wavelength hit rate of the product is increased and the wavelength STD is reduced.
Detailed Description
The following further describes the specific embodiments of the present invention in combination with the technical solutions.
Example 1
(1) Cutting a 4-inch sapphire crystal bar into wafers by using a multi-wire cutting machine, wherein the cutting time is 10H, the linear speed is 1500 m/min, the tension is 40N, the BOW of a cut product is controlled within 15um, the WARP is controlled within 50um, and the cutting thickness is 300um larger than the thickness of a final finished product;
(2) sorting:
sorting the positive and negative BOW surfaces of the linear cutting wafer (the thickness, TTV, BOW and WARP of the product can be automatically detected by using an automatic thickness sorting machine), and uniformly placing the negative BOW surfaces towards the U surface of the material box;
(3) grinding and thinning:
placing the sorted product with negative BOW facing upwards in a planetary wheel of a grinding mill at a rotation speed of 20rpm and a pressure of 30g/cm2The removal amount is 70um, the processing temperature is 20 ℃, the processing time is 60min, the thickness tolerance of the product after being taken off the machine is within 5um, no scratch is caused, the TTV is less than or equal to 3um, and the BOW value of the product is controlled to be 0-2 um.
Example 2
(1) Cutting a 4-inch sapphire crystal bar into wafers by using a multi-wire cutting machine, wherein the cutting time is 20H, the linear speed is 1800 m/min, the tension is 50N, the BOW of a cut product is controlled within 15um, the WARP is controlled within 50um, and the cutting thickness is 300um larger than the thickness of a final finished product;
(2) sorting:
sorting positive and negative BOW surfaces of the linear cutting wafer obtained in the step (1), wherein the negative BOW surfaces are uniformly placed towards the U surface of the material box;
(3) grinding and thinning:
if the sorted product is placed in the planetary wheel of a grinder with its front bow facing upwards, the speed is 30rpm and the pressure is 50g/cm2The removal amount is 100um, the processing temperature is 25 ℃, the processing time is 90min, the thickness tolerance of the product after being taken off the machine is within 5um, no scratch is caused, the TTV is less than or equal to 3um, and the BOW value of the product is controlled to be 3-6 um;
the aim of controlling the BOW value of the finished product can be effectively achieved by processing the grinding positive/negative BOW in a split manner.
Claims (1)
1. A method for controlling the BOW value processing of a ground product is characterized by comprising the following steps:
(1) cutting a 4-inch sapphire crystal bar into wafers by using a multi-wire cutting machine, wherein the cutting time is 5-20H, the linear velocity is 900-1800 m/min, the tension is 30-50N, the BOW of a cut product is controlled within 15um, the WARP is controlled within 50um, and the cutting thickness is 300um larger than the thickness of a final product;
(2) sorting:
sorting positive and negative BOW surfaces of the linear cutting wafer obtained in the step (1), wherein the negative BOW surfaces are uniformly placed towards the U surface of the material box;
(3) grinding and thinning:
(3.1) putting the sorted product in the step (2) in a planetary wheel of a grinding machine with the negative BOW surface facing upwards at the rotating speed of 10-30rpm and the pressure of 10-50g/cm2Removing amount is 50-100um, processing temperature is 18-25 ℃, processing is 30-90min, thickness tolerance of a product in a machine is within 5um, no scratch is caused, TTV is less than or equal to 3um, and BOW value of the product is controlled to be 0-2 um;
(3.2) placing the sorted product in the step (2) in a planetary wheel of a grinding machine with the front BOW side facing upwards, wherein the rotating speed is 10-30rpm, and the pressure is 10-50g/cm2Removing amount is 50-100um, processing temperature is 18-25 ℃, processing is 30-90min, thickness tolerance of a product in a machine is within 5um, no scratch is caused, TTV is less than or equal to 3um, and BOW value of the product is controlled to be 3-6 um;
the aim of controlling the BOW value of the finished product is effectively achieved by processing the ground positive/negative BOW in a split manner.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910967920.3A CN110722692B (en) | 2019-10-12 | 2019-10-12 | Method for controlling machining of BOW value of ground product |
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| CN201910967920.3A CN110722692B (en) | 2019-10-12 | 2019-10-12 | Method for controlling machining of BOW value of ground product |
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| CN110722692B true CN110722692B (en) | 2021-09-07 |
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| CN114068773A (en) * | 2022-01-11 | 2022-02-18 | 江西兆驰半导体有限公司 | Sapphire substrate manufacturing method |
Citations (9)
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|---|---|---|---|---|
| DE69518202T2 (en) * | 1994-08-29 | 2001-02-08 | Shinetsu Handotai Kk | Method and device for surface grinding a workpiece |
| CN1787181A (en) * | 2004-12-08 | 2006-06-14 | 中国电子科技集团公司第四十六研究所 | Method for processing chip capable of improving semiconductor chip geometric parameter |
| CN101600539A (en) * | 2006-12-28 | 2009-12-09 | 圣戈本陶瓷及塑料股份有限公司 | Grind the method for sapphire substrate |
| CN102569055A (en) * | 2010-12-14 | 2012-07-11 | 北京天科合达蓝光半导体有限公司 | Adjustment method of SiC (silicon carbide) single crystal flatness by wet etching |
| CN103817806A (en) * | 2013-12-24 | 2014-05-28 | 珠海东精大电子科技有限公司 | Loose wheel and method of producing quartz wafers |
| CN104813439A (en) * | 2012-10-26 | 2015-07-29 | 道康宁公司 | Flat sic semiconductor substrate |
| CN107097148A (en) * | 2017-06-13 | 2017-08-29 | 江苏吉星新材料有限公司 | A kind of sorting technique after sapphire substrate sheet section |
| CN108406575A (en) * | 2018-02-05 | 2018-08-17 | 上海华虹宏力半导体制造有限公司 | CMP grinding method |
| CN110270924A (en) * | 2019-07-31 | 2019-09-24 | 上海华虹宏力半导体制造有限公司 | CMP grinding method |
-
2019
- 2019-10-12 CN CN201910967920.3A patent/CN110722692B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69518202T2 (en) * | 1994-08-29 | 2001-02-08 | Shinetsu Handotai Kk | Method and device for surface grinding a workpiece |
| CN1787181A (en) * | 2004-12-08 | 2006-06-14 | 中国电子科技集团公司第四十六研究所 | Method for processing chip capable of improving semiconductor chip geometric parameter |
| CN101600539A (en) * | 2006-12-28 | 2009-12-09 | 圣戈本陶瓷及塑料股份有限公司 | Grind the method for sapphire substrate |
| CN102569055A (en) * | 2010-12-14 | 2012-07-11 | 北京天科合达蓝光半导体有限公司 | Adjustment method of SiC (silicon carbide) single crystal flatness by wet etching |
| CN104813439A (en) * | 2012-10-26 | 2015-07-29 | 道康宁公司 | Flat sic semiconductor substrate |
| CN103817806A (en) * | 2013-12-24 | 2014-05-28 | 珠海东精大电子科技有限公司 | Loose wheel and method of producing quartz wafers |
| CN107097148A (en) * | 2017-06-13 | 2017-08-29 | 江苏吉星新材料有限公司 | A kind of sorting technique after sapphire substrate sheet section |
| CN108406575A (en) * | 2018-02-05 | 2018-08-17 | 上海华虹宏力半导体制造有限公司 | CMP grinding method |
| CN110270924A (en) * | 2019-07-31 | 2019-09-24 | 上海华虹宏力半导体制造有限公司 | CMP grinding method |
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Address after: 223001 No. 6, Jingxiu Road, Huai'an City, Jiangsu Province Patentee after: Jiangsu Aoyang Shunchang integrated circuit Co.,Ltd. Address before: 223001 No. 6, Jingxiu Road, Huai'an City, Jiangsu Province Patentee before: JIANGSU AUCKSUN INTEGRATED CIRCUIT Co.,Ltd. |
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Effective date of registration: 20220228 Address after: 223001 No. 6, Jingxiu Road, Qinghe New District, Huai'an City, Jiangsu Province Patentee after: HUAIAN AUCKSUN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Address before: 223001 No. 6, Jingxiu Road, Huai'an City, Jiangsu Province Patentee before: Jiangsu Aoyang Shunchang integrated circuit Co.,Ltd. |