CN110718604A - Back surface field of P-type crystalline silicon solar cell and back passivation layer preparation method - Google Patents
Back surface field of P-type crystalline silicon solar cell and back passivation layer preparation method Download PDFInfo
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- 238000002161 passivation Methods 0.000 title claims abstract description 36
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 45
- 239000010703 silicon Substances 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 41
- 230000003647 oxidation Effects 0.000 claims abstract description 19
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 238000001816 cooling Methods 0.000 claims abstract description 10
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 4
- 238000000137 annealing Methods 0.000 claims abstract 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910000521 B alloy Inorganic materials 0.000 claims description 4
- DJPURDPSZFLWGC-UHFFFAOYSA-N alumanylidyneborane Chemical compound [Al]#B DJPURDPSZFLWGC-UHFFFAOYSA-N 0.000 claims description 4
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 4
- 238000002207 thermal evaporation Methods 0.000 claims description 4
- 229910000807 Ga alloy Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000004941 influx Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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Abstract
The invention discloses a method for preparing a back surface field and a back passivation layer of a P-type crystalline silicon solar cell, which comprises the following steps: stable PN formed on light receiving surface (front surface) of P-type solar silicon wafer+Knot formation; putting a P-type solar silicon wafer into a vacuum environment, and forming a very thin P-type doped material film layer on the backlight surface (back surface) of the P-type solar silicon wafer; forming an oxide film layer with negative charges on the surface of the P-type doped material film layer; putting the P-type solar silicon wafer into an oxidation furnace, carrying out heat treatment in an oxygen-free environment, and forming a P on the back of the P-type solar silicon wafer+A back field; then, continuously heating and annealing in an aerobic environment to form a back passivation layer; and cooling the oxidation furnace, taking out the P-type solar silicon wafer from the oxidation furnace and cooling. The invention can realize back surface field of the P-type crystalline silicon solar cell andthe integrated preparation method of the back passivation layer improves the conversion efficiency of the solar cell, simplifies the process and reduces the cost.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a back surface field of a P-type crystalline silicon solar cell and a preparation method of a back passivation layer.
Background
Solar power generation is increasingly widely popularized and applied worldwide as an important new energy industry. With the influx of large investments and the continued release of capacity, the competitive pressure in the industry has come with the cost and price of crystalline silicon batteries going low in recent years. Therefore, researchers search for better methods for improving the efficiency of the solar cell and reducing the cost without losing the power so as to improve the competitiveness of products. At present, research and development personnel mainly start from two aspects of improving the structure and the manufacturing process of a solar cell, and the conversion efficiency of the cell is improved by changing the cell structure, increasing the utilization rate of light, reducing the recombination of current carriers and the like. At present, the mature product on the production line is a P-type crystalline silicon battery, and the conversion efficiency of the product in the industry is about 18% (polycrystal) to 20% (single crystal). It is mainly characterized by PN+The film is bonded on the light incident surface, and the light incident surface is provided with a film which has the functions of passivation and antireflection; and preparing a metal aluminum electrode on the back of the battery directly by screen printing and sintering. The battery is characterized in that: the process is simplified to the utmost extent, so that the cost is lowest, the incident light surface is completely passivated, and although the back surface of the battery forms a back field through sintered metallization, the battery is directly contacted with metal, the surface is not passivated, and the recombination probability of current carriers is higher. The more popular P-type back-passivated cells at present are PERC structures, i.e. emitter-passivated, back-surface-passivated, and local back-field structures. The main process steps are as follows: forming PN on the light receiving surface by diffusion doping+Knot formation; etching the back to remove the doped layer; preparing a passivated antireflection film on the light receiving surface; preparing an aluminum oxide passivation layer on the back surface by using an Atomic Layer Deposition (ALD) or plasma chemical vapor deposition (PECVD) method; laser or printing etching grooving; the back electrode is screen printed and sintered. The problems with this method of processing are: only a local back field can be formed; expensive equipment such as laser, ALD and the like is used in the processing process, so that the equipment cost is high; the laser processing technique is difficult to control and is easy to operate the battery meterThe face is damaged. Therefore, it is a research direction of those skilled in the art to develop a new method for preparing a back surface field and a back passivation layer of a P-type crystalline silicon solar cell, which can realize high efficiency and low cost of the silicon crystalline silicon solar cell.
Disclosure of Invention
The invention provides a preparation method of a back surface field and a back passivation layer of a P-type crystalline silicon solar cell, which can improve the conversion efficiency of the solar cell, simplify the process and reduce the cost.
The specific technical scheme adopted is as follows:
a back surface field and back passivation layer preparation method of a P-type crystalline silicon solar cell comprises the following steps:
s1, forming stable PN on the light receiving surface of the P-type solar silicon wafer+Knot formation;
s2, placing the P-type solar silicon wafer obtained in the step S1 in a vacuum environment, and forming a P-type doped material film layer on the backlight surface of the P-type solar silicon wafer;
s3, processing the P-type solar silicon wafer obtained in the step S2, and forming an oxide film layer with negative charges on the surface of the P-type doped material film layer;
s4, putting the P-type solar silicon wafer obtained in the step S3 into an oxidation furnace, inputting nitrogen into the oxidation furnace to form an oxygen-free environment, carrying out heat treatment on the P-type solar silicon wafer in the oxygen-free environment, and forming a back surface field on the back surface of the P-type solar silicon wafer;
s5, inputting oxygen into the oxidation furnace to form an aerobic environment, continuously carrying out heat treatment on the P-type solar silicon wafer in the aerobic environment, and forming a back passivation layer on the backlight surface of the P-type solar silicon wafer;
and S6, cooling the oxidation furnace, taking the P-type solar silicon wafer out of the oxidation furnace and cooling.
Preferably, in the method for preparing the back field and the back passivation layer of the P-type crystalline silicon solar cell: in step S2, a P-type doped material film layer is formed on the back surface of the P-type solar silicon wafer by thermal evaporation or magnetron sputtering.
More preferably, in the method for preparing the back field and the back passivation layer of the P-type crystalline silicon solar cell: in step S3, a negatively charged oxide film is formed on the P-type doped material film by thermal evaporation or magnetron sputtering.
Further preferably, in the method for preparing the back field and the back passivation layer of the P-type crystalline silicon solar cell: and step S2, the thickness of the P-type doped material film layer is 0.5nm-10 nm.
More preferably, in the method for preparing the back field and the back passivation layer of the P-type crystalline silicon solar cell: step S2, the vacuum degree of the vacuum environment is 10-2~-10Pa。
More preferably, in the method for preparing the back field and the back passivation layer of the P-type crystalline silicon solar cell: and S2, adopting any one of high-purity simple aluminum, aluminum boron alloy and aluminum gallium alloy as the P-type doped material film layer.
More preferably, in the method for preparing the back field and the back passivation layer of the P-type crystalline silicon solar cell: the thickness of the back passivation layer in the step S5 is 10nm-500 nm.
More preferably, in the method for preparing the back field and the back passivation layer of the P-type crystalline silicon solar cell: in step S5, oxygen is input into the oxidation furnace, so that the proportion of oxygen in the oxidation furnace reaches 5% -50%.
More preferably, in the method for preparing the back surface field and the back passivation layer of the P-type crystalline silicon solar cell, the temperature range of the heat treatment in the step S4 is 500 ~ 850 ℃, and the duration time of the heat treatment is 0.5-60 minutes.
By adopting the technical scheme: already has PN+The non-light-receiving surface of the silicon chip of the junction realizes the passivation treatment of the back surface field and the back surface field at the same time. The atoms of the doped material film layer are diffused into the silicon substrate through oxygen-free heat treatment to form a displacement state P+On the other hand, the back field provides more coordinated oxygen atoms through aerobic heat treatment and high-temperature oxygen atmosphere, so that an oxygen-rich silicon-doped oxide layer with negative charges is formed at the interface, the density of interface defect states is reduced, and the passivation method has a good passivation effect, and is simple and convenient in process and low in cost.
Compared with the prior art, the invention greatly improves the conversion efficiency of the solar cell, simplifies the production process, does not need to adopt laser patterning and ALD equipment if a proper mask plate is used, and reduces the production cost.
Drawings
The invention will be described in further detail with reference to the following detailed description and accompanying drawings:
FIG. 1 is a schematic flow diagram of the present invention;
FIG. 2 is a schematic structural diagram of a P-type solar silicon wafer in step 1 according to the present invention;
FIG. 3 is a schematic structural diagram of a P-type solar silicon wafer in step 2 according to the present invention;
FIG. 4 is a schematic structural diagram of a P-type solar silicon wafer in step 3 according to the present invention;
FIG. 5 is a schematic structural diagram of a P-type solar silicon wafer at step 4 according to the present invention;
FIG. 6 is a schematic structural diagram of a P-type solar silicon wafer at step 5 according to the present invention;
the correspondence between each reference numeral and the part name is as follows:
301. a P-type doped material film layer; 401. a negatively charged oxide film layer; 501. a back field; 601. a back passivation layer.
Detailed Description
In order to more clearly illustrate the technical solution of the present invention, the following will be further described with reference to various embodiments.
Example 1:
the first process step is the preparation of the doped film. The surface of the silicon wafer processed by the previous process is a clean surface without other impurities, or a silicon oxide layer with a thickness of a plurality of nanometers is formed by a certain process method. This step is completely identical to the prior art. The following steps are continuously carried out on the surface:
firstly, a high-purity aluminum film 301 with the thickness of 5nm is prepared on a backlight surface by a vacuum magnetron sputtering method, as shown in fig. 3. The side edge of the silicon chip is designed by proper equipment structure to ensure that no aluminum is deposited on the other sideOne side receives the light or the edge side. The target material is high-purity aluminum with the purity of 6N, and the vacuum degree of the vacuum environment is 10-2Pa, filled with N2Gas is used as stable gas;
preparing an alumina film 401 with the thickness of 60 nm on the high-purity aluminum film by a vacuum radio frequency magnetron sputtering method, wherein the used target material is a high-purity alumina target material, and the vacuum degree of a vacuum environment is 10-2Pa, filling N2 gas as stable gas;
the silicon chip which is finished with the coating process is put into an oxidation furnace made of quartz glass for photovoltaic, and the charging temperature is below 500 ℃. Slowly heating to 580 deg.C after the furnace tube temperature is balanced, heating rate is 5 deg.C/min, then maintaining 580 deg.C for 3min, and N in the furnace2The ratio is 100% and the al-si reaches the eutectic temperature, forming the back surface field 501.
Pure O is introduced into the furnace2，O2And N2The ratio of (1: 1) and the temperature is raised to 600 ℃ and kept for 20 min.
Stopping the introduction of O2And cooling to below 500 deg.c, taking out the silicon chip and cooling.
Example 2:
the first process step is the preparation of the doped film. The surface of the silicon wafer processed by the previous process is a clean surface without other impurities, or a silicon oxide layer with a thickness of a plurality of nanometers is formed by a certain process method. This step is completely identical to the prior art. On the surface, the following steps are carried out: firstly, a layer of aluminum-gallium or aluminum-boron alloy film 301 with the thickness of 5nm is prepared on the backlight surface by a vacuum magnetron sputtering method, as shown in fig. 3. The proportion of gallium in the aluminum gallium alloy is 10%, the proportion of boron in the aluminum boron alloy is 5%, and the side edge of the silicon wafer is ensured not to be deposited with metal on the light receiving surface on the other side or the side surface of the edge through proper equipment structure design. The vacuum degree of the vacuum environment is 10-2Pa, filled with N2Gas is used as stable gas;
a hafnium oxide film 401 with a thickness of 100 nm is prepared on the high-purity aluminum film by a vacuum radio frequency magnetron sputtering method, as shown in FIG. 4. The target material is high-purity hafnium oxide targetThe vacuum degree of the material in a vacuum environment is 10-2Pa, filled with N2The gas is used as a stable gas;
the silicon chip which is finished with the coating process is put into an oxidation furnace made of quartz glass for photovoltaic, and the charging temperature is below 500 ℃. Slowly heating to 580 deg.C after the furnace tube temperature is balanced, heating rate is 5 deg.C/min, then maintaining 580 deg.C for 3min, and N in the furnace2The ratio is 100%, at which point the aluminum alloy and silicon reach a eutectic temperature, forming a back surface field 501.
Pure O is introduced into the furnace2，O2And N2The ratio of (A) to (B) is 3:1, the temperature is raised to 600 ℃, and the temperature is kept for 10 min.
Stopping the introduction of O2And cooling to below 500 deg.c, taking out the silicon chip and cooling.
The above description is only an embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. The protection scope of the present invention is subject to the protection scope of the claims.
Claims (9)
1. A back surface field and back passivation layer preparation method of a P-type crystalline silicon solar cell is characterized by comprising the following steps:
s1, forming stable PN on the light receiving surface of the P-type solar silicon wafer+Knot formation;
s2, putting the P-type solar silicon wafer obtained in the step S1 into a vacuum environment, and forming a P-type doped material film layer (301) on the backlight surface of the P-type solar silicon wafer;
s3, processing the P-type solar silicon wafer obtained in the step S2, and forming an oxide film layer (401) with negative charges on the surface of the P-type doping material film layer (301);
s4, putting the P-type solar silicon wafer obtained in the step S3 into an oxidation furnace, inputting nitrogen into the oxidation furnace to form an oxygen-free environment, carrying out annealing heat treatment on the P-type solar silicon wafer in the oxygen-free environment, and forming a back surface field (501) on the back surface of the P-type solar silicon wafer;
s5, oxygen is input into the oxidation furnace to form an aerobic environment, the P-type solar silicon wafer is continuously thermally treated in the aerobic environment, and a back passivation layer (601) is formed on the backlight surface of the P-type solar silicon wafer;
and S6, cooling the oxidation furnace, taking the P-type solar silicon wafer out of the oxidation furnace and cooling.
2. The method for preparing a back surface field and back passivation layer of a P-type crystalline silicon solar cell according to claim 1, characterized in that: in step S2, a P-type doped material film layer is formed on the back surface of the P-type solar silicon wafer by thermal evaporation or magnetron sputtering.
3. The method for preparing a back surface field and back passivation layer of a P-type crystalline silicon solar cell according to claim 1, characterized in that: in step S3, a negatively charged oxide film is formed on the P-type doped material film by thermal evaporation or magnetron sputtering.
4. The method for preparing a back surface field and back passivation layer of a P-type crystalline silicon solar cell according to claim 1, characterized in that: and step S2, the thickness of the P-type doped material film layer is 0.5nm-10 nm.
5. The method for preparing a back surface field and back passivation layer of a P-type crystalline silicon solar cell according to claim 1, characterized in that: step S2, the vacuum degree of the vacuum environment is 10-2~-10Pa。
6. The method for preparing a back surface field and back passivation layer of a P-type crystalline silicon solar cell according to claim 1, characterized in that: and S2, adopting any one of high-purity simple aluminum, aluminum boron alloy and aluminum gallium alloy as the P-type doped material film layer.
7. The method for preparing a back field and back passivation layer of a P-type crystalline silicon solar cell as claimed in claim 1, wherein the thickness of the back passivation layer in step S5 is 10nm ~ 500 nm.
8. The method for preparing a back surface field and back passivation layer of a P-type crystalline silicon solar cell according to claim 1, characterized in that: in step S5, oxygen is input into the oxidation furnace, so that the proportion of oxygen in the oxidation furnace reaches 5% -50%.
9. The method for preparing a back field and back passivation layer of a P-type crystalline silicon solar cell as claimed in claim 1, wherein the temperature range of the heat treatment in the step S4 is 500 ~ 850 ℃, and the duration time of the heat treatment is 0.5-60 minutes.
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