CN110716386A - Optical proximity effect correction method, correction device and mask - Google Patents
Optical proximity effect correction method, correction device and mask Download PDFInfo
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- 230000003287 optical effect Effects 0.000 title claims abstract description 55
- 230000000694 effects Effects 0.000 title claims abstract description 43
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- 238000012360 testing method Methods 0.000 claims abstract description 77
- 238000012216 screening Methods 0.000 claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims abstract description 15
- 238000012545 processing Methods 0.000 claims description 5
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- 238000010586 diagram Methods 0.000 description 8
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- 238000010894 electron beam technology Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
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Abstract
The invention provides a method for correcting optical proximity effect, which comprises the following steps: obtaining a test pattern; exposing based on the mask of the test pattern to obtain exposure data; establishing an OPC (optical proximity correction) first rule base based on the corresponding relation between the data of the test pattern and the exposure data; determining a key area of the layout to be corrected, and obtaining a graphic characteristic parameter of the key area; screening an OPC (optical proximity correction) first rule base according to the graphic characteristic parameters of the key area to obtain an OPC second rule base; and correcting the layout to be corrected based on the OPC second rule base to obtain a corrected layout, and manufacturing a mask for exposure based on the corrected layout. The invention also provides a device for correcting the optical proximity effect. And screening the OPC first rule base according to the graphic characteristic parameters of the key area, reducing the number of rules in the rule base and shortening the correction running time. The invention also provides a mask formed by using the correction method, and the fidelity of the exposed pattern is improved.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing industry, and in particular, to a method, an apparatus and a mask for correcting optical proximity effect.
Background
Photolithography, a main process in integrated circuit fabrication, is a technique for transferring a pattern on a reticle (also called a mask or a reticle) to materials of various layers on a silicon surface, and simply transferring the pattern on the mask to a wafer. The actual realization is that light of a light source irradiates a mask, the mask is provided with a pattern to be transferred, the mask pattern is equivalent to a barrier on a transmission route for light waves, the mask pattern is projected onto photoresist through a projection system, and the photoresist is subjected to chemical reaction after exposure, so that a photoetching pattern related to the mask pattern is obtained on a wafer.
According to the principle of light wave diffraction and interference, light waves are diffracted when passing through a mask, and light waves at different positions of the mask are interfered, so that the light intensity distribution actually projected onto a wafer is the superposition result of the diffracted light waves and is not identical to the pattern on the mask, and the phenomenon that the photoetching pattern is deviated from the mask pattern due to the light wave diffraction and interference is called optical proximity effect (optical proximity effect).
Due to the existence of the diffraction effect, generally speaking, when the line width on the wafer is smaller than the exposure wavelength, the diffraction effect of light is very obvious, the deviation between the photoetching pattern formed on the wafer and the mask pattern cannot be ignored, and as the characteristic size of the integrated circuit is continuously reduced, the deviation between the photoetching pattern and the mask pattern becomes more and more serious, but the existing optical proximity effect has a relatively long correction process, occupies a large amount of computer software and hardware system resources, and has low correction efficiency. Therefore, it is highly desirable to develop an efficient OPC method.
Disclosure of Invention
In view of the above problems, it is an object of the present invention to provide a method, an apparatus and a mask for correcting optical proximity effect when the rule is complicated.
In order to achieve the purpose, the invention adopts the following technical scheme: a method for correcting optical proximity effect comprises the following steps: obtaining a test pattern; exposing the mask based on the test pattern to obtain exposure data; establishing an OPC (optical proximity correction) first rule base based on the corresponding relation between the data of the test pattern and the exposure data; determining a key area of the layout to be corrected, and obtaining a graphic characteristic parameter of the key area; screening an OPC (optical proximity correction) first rule base according to the graphic characteristic parameters of the key area to obtain an OPC second rule base; and correcting the layout to be corrected based on the OPC second rule base to obtain a corrected layout, and manufacturing a mask for exposure based on the corrected layout.
Optionally, the screening the OPC first rule base according to the graphic feature parameters of the key area to obtain an OPC second rule base includes: and determining an OPC second rule base according to the matching result of the graphic characteristic parameters of the key area and the correction rules corresponding to the corresponding relations in the OPC first rule base.
Optionally, determining the second OPC rule base according to the matching result of the graphic feature parameters of the key area and the correction rules corresponding to the respective corresponding relationships in the first OPC rule base, where the determining step includes: determining data of a target test pattern matched with the pattern characteristic parameters of the key area in an OPC (optical proximity correction) first rule base, and a correction rule corresponding to the data of the target test pattern, wherein the correction rule belongs to an OPC second rule base;
alternatively, the first and second electrodes may be,
and determining target exposure data matched with the graphic characteristic parameters of the key area in the OPC first rule base, and a correction rule corresponding to the target exposure data, wherein the correction rule belongs to the OPC second rule base.
Optionally, the data of the test pattern at least includes one of a line width, an interval, and a period of the test pattern, and the exposure data at least includes one of a line width, an interval, and a period of the exposure pattern, and the data of the test pattern corresponds to the exposure data.
Optionally, determining a key region of the layout to be corrected includes: dividing regions of the layout to be corrected to determine a key region and a non-key region of the layout to be corrected;
correcting the layout to be corrected based on the OPC second rule base to obtain a corrected layout, and manufacturing a mask for exposure based on the corrected layout, wherein the method comprises the following steps: and correcting the key area of the layout to be corrected based on the OPC second rule base to obtain a corrected layout, and manufacturing a mask for exposure based on the corrected layout.
Optionally, the key region includes a pattern bearing the electrical property, and the pattern characteristic parameter of the key region includes at least one of a line width, an interval, and a period of the pattern bearing the electrical property.
Optionally, the method for correcting the key area of the layout to be corrected based on the second OPC rule base to obtain the corrected layout includes: and correcting the key area of the layout to be corrected based on the OPC second rule base by taking the line width and the interval of the key area of the layout to be corrected as judgment conditions to obtain the corrected layout.
Optionally, the exposure condition of the mask manufactured based on the corrected layout is the same as the exposure condition of the mask based on the test pattern.
The invention also provides a device for correcting the optical proximity effect, which comprises:
an acquisition unit for acquiring a test pattern;
an exposure unit configured to expose a mask based on the test pattern to obtain exposure data;
the establishing unit is used for establishing an OPC (optical proximity correction) first rule base based on the corresponding relation between the data of the test pattern and the exposure data;
the processing unit is used for determining a key area of the layout to be corrected and acquiring the graphic characteristic parameters of the key area;
the screening unit is used for screening the OPC first rule base according to the graphic characteristic parameters of the key area to obtain an OPC second rule base;
and the correcting unit is used for correcting the layout to be corrected based on the OPC second rule base to obtain a corrected layout, and manufacturing a mask for exposure based on the corrected layout.
The invention also provides a mask formed by using the optical proximity effect correction method.
The method comprises the steps of determining a key area of a layout to be corrected to obtain graphic characteristic parameters of the key area, wherein the graphic characteristic parameters of the key area are generally concentrated in a certain range, screening an OPC first rule base according to the graphic characteristic parameters of the key area, namely forming an OPC second rule base by rules in the OPC first rule base matched with the graphic characteristic parameters of the key area, removing the remaining unmatched rules, reducing the number of the rules in the OPC first rule base by screening to obtain the OPC second rule base, correcting the layout to be corrected based on the OPC second rule base to obtain a corrected layout, and manufacturing a mask for exposure based on the corrected layout. The invention reduces the occupation of computer software and hardware resources, shortens the operation time of optical proximity effect correction and improves the correction efficiency by reducing the number of rules during correction; meanwhile, a key area is screened out for correction, and the optical proximity effect correction efficiency is further improved. Meanwhile, the mask formed by the correction method of the optical proximity effect improves the fidelity of the exposed pattern.
Drawings
FIG. 1 is a schematic diagram of a typical non-EUV exposure system;
FIG. 2 is a schematic illustration of a mask pattern after exposure of lines;
FIG. 3 is a flow chart illustrating a method for correcting optical proximity effect according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a test pattern designed in an embodiment provided by the present invention;
FIG. 5 is a schematic diagram of a plate to be corrected according to an embodiment of the present invention;
FIG. 6 is a schematic diagram illustrating the division of a layout area to be corrected in an embodiment provided by the present invention;
FIG. 7 is a block diagram of an optical proximity correction apparatus according to an embodiment of the present invention;
FIG. 8 is a mask that is not corrected by a method of optical proximity correction according to an embodiment of the present invention;
FIG. 9 is a diagram illustrating a post-exposure lithographic pattern of a mask that has not been corrected by a method for correcting optical proximity effects in one embodiment of the present invention;
FIG. 10 illustrates a mask corrected by a method for correcting optical proximity effect according to an embodiment of the present invention;
FIG. 11 is a diagram illustrating a mask-exposed lithographic pattern corrected by a method for correcting optical proximity effect according to an embodiment of the present invention.
Wherein: 1. the device comprises a light source, 2, a first lens, 3, a mask, 4, a second lens, 5, a third lens, 6, photoresist, 7, a wafer, 8, a non-critical area, 9, a critical area, 10, an acquisition unit, 11, an exposure unit, 12, a building unit, 13, a processing unit, 14, a screening unit and 15, and a correction unit.
Detailed Description
The following describes an embodiment according to the present invention with reference to the drawings.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced in other ways than those specifically described herein, and thus the present invention is not limited to the specific embodiments disclosed below.
Fig. 1 is a schematic diagram of a typical euv exposure system, where light emitted from a light source 1 is irradiated onto a mask 3 through a first lens 2, the mask 3 has a mask pattern to be transferred, the mask pattern on the mask 3 is equivalent to an obstacle on a propagation path for light waves, the mask pattern is projected onto a photoresist 6 through a projection system composed of a second lens 4 and a third lens 5, and the photoresist 6 undergoes a chemical reaction after exposure, so as to obtain a photoresist pattern on a wafer 7, which is related to an original mask pattern.
Fig. 2 is a schematic view of exposure of a mask pattern, and it can be seen from fig. 2 that when the line width of the mask pattern is 200 nm, the period is 460 nm, that is, the sum of the line width 200 nm and the interval 260 nm is equal to the period, the line width of the mask pattern after exposure becomes 192.9 nm, that is, the difference between the line width and the line width of the mask pattern before exposure is 7.1 nm, and therefore, Optical Proximity Correction (OPC) is required to enhance the fidelity of the pattern.
In general, due to the existence of diffraction effect, when the line width of the layout to be corrected is smaller than the exposure wavelength, Optical Proximity Correction (OPC) must be carried out on the layout to be corrected, if a 248 nm wavelength photoetching machine is used, when the line width of a graph is smaller than 250 nm, simple correction must be carried out; when the line width is <180 nm, very complicated corrections are required, otherwise the resulting lithographic pattern on the wafer 7 and the original mask pattern may differ significantly. The number of the actual layouts to be corrected is huge, and the correction rules are many. When the layout is large and the rule is complex, the time consumed for correcting the layout to be corrected is considerable, for example, when a layout area of 5 mm × 5 mm is subjected to about 3000 lines of rule correction, tens of minutes or even longer is required.
In order to solve the problems that the actual layout to be corrected is huge in quantity, many correction rules are provided, the correction rules are complex, more computer software and hardware resources are occupied, the correction operation time is long, and the correction efficiency is very low, the invention provides a correction method, a correction device and a mask of an optical proximity effect, the correction method of the optical proximity effect provided by the invention is based on the optical proximity effect correction of the rules, which is different from the traditional correction method, the invention divides the layout to be corrected into a key area 9 and a non-key area 8 before the layout to be corrected is corrected, the graphic characteristic parameters of the key area 9 are generally concentrated in a certain range, the statistics of the graphic characteristic parameters of the key area 9 in the layout to be corrected is carried out, and an OPC first rule base is screened according to the statistical result of the graphic characteristic parameters of the key area 9, namely, the rule matched with the graphic characteristic parameter of the key area 9 in the first rule base of OPC is used as the second rule base of OPC, and the rest unmatched rules are removed. The number of rules in the OPC first rule base is reduced to obtain an OPC second rule base, and the layout to be corrected is corrected based on the OPC second rule base; meanwhile, the key area 9 is screened out for correction, the correction range is small, and the correction efficiency of the optical proximity effect is further improved. The mask formed by the optical proximity effect correction method improves the fidelity of the pattern of the exposed mask.
Referring to fig. 3 to 6, the present invention provides a method for correcting optical proximity effect, which can shorten the correction running time and improve the correction efficiency, comprising the following steps:
s100: a test pattern was obtained, as shown in fig. 4.
It should be noted that, first, a test pattern is obtained, the test pattern covers various situations of line width (CD) nodes, and only a periodic line is taken as an example, when the line width is 180 nm, a period 360 nm, a period 370 nm, and a period 380 nm … … are designed until a very large period. Similarly, a corresponding number of cycles are designed for a line width of 190 nm and a line width of 200 nm, up to a large number of cycles. The sum of the line width and the interval between each periodic line in the test pattern is equal to the period, and in the following description, the sum of the line width and the interval of the periodic line is also equal to the period.
The embodiment does not specifically limit which step collects the test pattern data, and the test pattern data may also be collected in a later step, where the test pattern data at least includes one of a line width, an interval, and a period of the test pattern, such as a line width, or a line width and a period. The test pattern storage format is a layout file, such as testpatterns.
S101: the mask 3 based on the test pattern is exposed to obtain exposure data.
The test pattern obtained in step S100 is first placed on the mask 3 by electron beam direct writing, and the mask 3 bearing the test pattern is exposed according to exposure conditions such as a light source shape, an exposure dose, and an exposure time (see fig. 2). Specifically, if the line width of the test pattern is 200 nm and the period is 400 nm, the line width after exposure is 190 nm; the line width of the test pattern is 190 nanometers, the period is 400 nanometers, and the line width after exposure is 186 nanometers; the period after exposure and before exposure of the test pattern is constant. Exposure data after exposure of the mask 3 based on the test pattern is collected.
S102: and establishing an OPC (optical proximity correction) first rule base based on the corresponding relation between the data of the test pattern and the exposure data.
It should be noted that, the data of the test pattern at least includes one of the line width, interval and period of the test pattern; the exposure data includes at least one of line width, interval and period of the test pattern after exposure. For example: the line width of the test pattern is 200 nanometers, the period is 400 nanometers, and the line width after exposure is 190 nanometers; the line width of the test pattern is 190 nanometers, the period is 400 nanometers, the line width after exposure is 186 nanometers, and the periods of the test pattern before and after exposure are not changed, so that the line width of the test pattern is 190 nanometers, and when the period is 400 nanometers, the line width needs to be increased to 200 nanometers, so that the desired line width is 190 nanometers. Establishing an OPC (optical proximity correction) first rule base based on the data of the test pattern and the exposure data of the test pattern after exposure, wherein the data of the test pattern corresponds to the exposure data, namely the data types are consistent, and specifically, if the collected data of the test pattern is the line width, the exposure data is the line width; the data of the test pattern is the line width and the period, and the exposure data is also the line width and the period.
S103: determining a key area 9 of the layout to be corrected, and obtaining the graphic characteristic parameters of the key area 9.
It should be noted that the format of the version-to-be-corrected file is gds file or oas file, and the actual version-to-be-corrected is very complex and contains a large number of graphs (see fig. 5 to 6).
Before the correction of the to-be-corrected layout, the to-be-corrected layout is divided into a key area 9 and a non-key area 8, wherein the graph in the key area 9 is a graph bearing electrical performance, i.e. the integrated circuit itself, and the graph in the non-key area 8 is some graphs placed for manufacturing processes or other purposes such as measurement, such as redundant graphs and used for subsequent processes, and the number is a measurement mark and also includes a layer number, an overlay mark, an alignment mark and the like. After the areas are divided, the graph characteristic parameters of the key area 9 are counted, and it can be seen that the graph characteristic parameters of the key area 9 are generally concentrated in a certain range (see fig. 6), and the graph characteristic parameters of the key area 9 at least include one of line width, interval and period, such as line width, or line width and period.
S104: and screening the OPC first rule base according to the graphic characteristic parameters of the key area 9 to obtain an OPC second rule base.
It should be noted that, in step S103, a graphic feature parameter at least including any one of a line width, an interval, and a period is obtained, and the OPC first rule base is screened according to the statistical graphic feature parameter of the key area 9. Specifically, the matching result of the graphic characteristic parameters of the key area 9 and the correction rules corresponding to the respective corresponding relationships in the first OPC rule base is used as the second OPC rule base. Namely target test pattern data or target exposure data matched with the pattern characteristic parameters of the key area 9, and a correction rule of the corresponding relation between the test pattern data and the exposure data is used as a second rule base; the correction rule for testing the corresponding relation between the graph data or the exposure data and the graph characteristics of the key area 9 which are not matched is the rule which is not needed by the version to be corrected, and is removed. For example, if the statistics shows that the layout to be corrected does not have a pattern with the line width of 180 nanometers, the rule containing the line width of 180 nanometers is removed before correction is carried out, and an OPC second rule base is obtained, so that the number of rules in the rule base is reduced, the utilization of computer software and hardware resources is reduced, the operation time of optical proximity effect correction is shortened, and the optical proximity effect correction efficiency is improved.
It should be noted that, since the modification rule is a corresponding relationship between the test pattern data and the exposure data, or even between the test pattern and the modification data, a matching modification rule can be determined as the second rule base by determining the test pattern data or the exposure data that matches the image feature parameters.
S105: and correcting the layout to be corrected based on the OPC second rule base to obtain a corrected layout, and manufacturing a mask 3 for exposure based on the corrected layout.
It should be noted that, specifically, the critical region 9 of the layout to be corrected is corrected based on the second OPC rule base to obtain a corrected layout, and a mask for exposure is manufactured based on the corrected layout.
Based on the second rule base of OPC, the line width and the interval, or the line width and the period, or the interval and the period in the key area 9 of the layout to be corrected are used as judgment conditions during correction, and an EDA tool is used for correcting the key area 9 of the layout to be corrected. For example, in a key region 9 of the layout to be corrected, the line width is greater than or equal to 200 nanometers and less than 210 nanometers, and the interval is between 260 nanometers and 270 nanometers, the line width needs to be reduced by 1 nanometer, namely the first half is a judgment condition, and the second half is a correction quantity; after the corrected layout is obtained, the corrected layout is placed on the mask 3 by means of direct electron beam writing, and subsequent procedures such as exposure are performed under the same exposure conditions as the test pattern in step S101. The key area 9 is screened out for correction, so that the range is small, the operation time of optical proximity effect correction is shortened, and the optical proximity effect correction efficiency is further improved.
Referring to fig. 7, the present invention also provides an optical proximity correction apparatus, including:
an acquisition unit 10 for acquiring a test pattern;
an exposure unit 11 for exposing the test pattern-based mask 3 to light to obtain exposure data;
the establishing unit 12 is used for establishing an OPC first rule base based on the corresponding relation between the data of the test pattern and the exposure data;
the processing unit 13 is used for determining a key region 9 of the layout to be corrected and obtaining a graphic characteristic parameter of the key region 9;
the screening unit 14 is configured to screen the OPC first rule base according to the graphic feature parameters of the key area 9 to obtain an OPC second rule base;
and a correcting unit 15, configured to correct the layout to be corrected based on the second OPC rule base to obtain a corrected layout, and to manufacture the mask 3 for exposure based on the corrected layout.
The screening unit 14 determines the second OPC rule base according to the matching result of the graphic feature parameters of the key area 9 and the correction rules corresponding to the respective corresponding relationships in the first OPC rule base.
The second rule base of OPC comprises: and the correction rule corresponding to the data of the target test pattern or the correction rule corresponding to the target exposure data, wherein the data of the target test pattern and the target exposure data comprise data matched with the pattern characteristic parameters of the key area 9 in the OPC first rule base.
The data of the test pattern at least includes one of a line width, an interval and a period of the test pattern, and the exposure data at least includes one of a line width, an interval and a period of the exposure pattern, the data of the test pattern corresponding to the exposure data.
The processing unit 13 performs region division on the layout to be corrected to determine a key region 9 and a non-key region 8 of the layout to be corrected, and obtains a graphic characteristic parameter of the key region 9.
The correction unit 15 corrects the critical region 9 of the layout to be corrected based on the second OPC rule base to obtain a corrected layout, and then a mask for exposure is manufactured based on the corrected layout.
The key area 9 comprises a pattern bearing the electrical performance, and the pattern characteristic parameter of the key area 9 at least comprises one of line width, interval and period of the pattern bearing the electrical performance.
The correcting unit 15 corrects the critical area 9 of the layout to be corrected based on the second rule base of OPC by using the line width and the interval of the critical area 9 of the layout to be corrected as the judgment conditions, so as to obtain the corrected layout.
The exposure condition of the mask manufactured based on the corrected layout is the same as the exposure condition of the mask based on the test pattern.
Referring to fig. 8-11, the present invention also provides a mask 3 formed by applying the above-mentioned optical proximity correction method, wherein the mask 3 carries a mask pattern. In a larger technology node, a primary mask (see fig. 8) is used as a layout to be corrected, and when the line width in the primary mask is smaller than the exposure wavelength, the primary mask must be corrected by an optical proximity effect, otherwise, a lithographic pattern (see fig. 9) obtained on a wafer and the primary mask (see fig. 8) which we want cause distortion of pattern corners and boundaries due to interference and diffraction effects, and a large deviation is generated. Therefore, the original mask (see fig. 8) is corrected by using the method for correcting the optical proximity effect of the present invention to obtain the corrected mask 3 (see fig. 10), and the corrected mask 3 is exposed under the same exposure condition as the test pattern to obtain the corrected lithography pattern of the mask 3 (see fig. 11). Referring to fig. 8-11, it is clear that the deviation between the lithography pattern (see fig. 11) obtained by exposing the mask 3 (see fig. 10) corrected by the correction method for optical proximity effect of the present invention and the original mask pattern (see fig. 8) is smaller, and the fidelity of the exposed pattern is improved.
In summary, before correction, the layout to be corrected is divided into regions, the layout to be corrected is divided into a key region 9 and a non-key region 8, graphic characteristic parameters of the key region 9 are generally concentrated in a certain range, graphic characteristic parameter statistics are performed on the key region 9 to obtain graphic characteristic parameters at least including one of line width, interval and period, an OPC first rule base is screened according to the graphic characteristic parameters obtained through statistics, matching results of the graphic characteristic parameters of the key region 9 and correction rules corresponding to corresponding relations in the OPC first rule base are used as an OPC second rule base, namely test graphic data or exposure data matched with the graphic characteristic parameters of the key region 9, and the correction rules of the corresponding relations between the test graphic data and the exposure data are used as the second rule base; the correction rule for testing the corresponding relation between the graph data or the exposure data and the graph characteristics of the key area 9 which are not matched is the rule which is not needed by the version to be corrected, and is removed. Therefore, the number of rules in the rule base is reduced, the occupation of software and hardware resources of a computer is reduced, the running time of optical proximity effect correction is shortened, and the optical proximity effect correction efficiency is improved; meanwhile, a key area 9 is screened out for correction, so that the optical proximity effect correction efficiency is further improved; the mask 3 formed by the correction method of the optical proximity effect improves the fidelity of the exposed graph.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A method for correcting optical proximity effect, comprising:
obtaining a test pattern;
exposing a mask based on the test pattern to obtain exposure data;
establishing an optical proximity effect correction OPC (optical proximity correction) first rule base based on the corresponding relation between the data of the test pattern and the exposure data;
determining a key area of a layout to be corrected, and obtaining a graphic characteristic parameter of the key area;
screening the OPC first rule base according to the graphic characteristic parameters of the key area to obtain an OPC second rule base;
and correcting the layout to be corrected based on the OPC second rule base to obtain a corrected layout, and manufacturing a mask for exposure based on the corrected layout.
2. The correction method according to claim 1, characterized in that: the screening the OPC first rule base according to the graphic characteristic parameters of the key area to obtain the OPC second rule base comprises the following steps:
and determining the OPC second rule base according to the matching result of the graphic characteristic parameters of the key area and the correction rules corresponding to the corresponding relations in the OPC first rule base.
3. The correction method according to claim 2, wherein the determining the second OPC rule base according to the matching result of the graphic feature parameters of the key area and the correction rules corresponding to the respective corresponding relationships in the first OPC rule base includes:
determining data of a target test pattern matched with the pattern characteristic parameters of the key area in the OPC first rule base, and a correction rule corresponding to the data of the target test pattern, wherein the correction rule belongs to the OPC second rule base;
alternatively, the first and second electrodes may be,
and determining target exposure data matched with the graphic characteristic parameters of the key area in the OPC first rule base, and a correction rule corresponding to the target exposure data, and belonging to the OPC second rule base.
4. The correction method according to claim 1, characterized in that: the data of the test pattern at least comprises one of line width, interval and period of the test pattern, and the exposure data at least comprises one of line width, interval and period of the exposure pattern, and the data of the test pattern corresponds to the exposure data.
5. The correction method according to claim 1, characterized in that: the determining of the key area of the layout to be corrected comprises the following steps:
dividing the region of the layout to be corrected to determine a key region and a non-key region of the layout to be corrected;
the correcting the layout to be corrected based on the second rule base for OPC to obtain a corrected layout, and manufacturing a mask for exposure based on the corrected layout comprises the following steps:
and correcting the key area of the layout to be corrected based on the OPC second rule base to obtain a corrected layout, and manufacturing a mask for exposure based on the corrected layout.
6. The correction method according to claim 5, characterized in that: the key area comprises a graph bearing electrical performance, and the graph characteristic parameter of the key area at least comprises one of line width, interval and period of the graph bearing the electrical performance.
7. The correction method according to claim 5, characterized in that: the correcting the key area of the layout to be corrected based on the OPC second rule base to obtain a corrected layout, which comprises the following steps:
and correcting the key area of the layout to be corrected based on the OPC second rule base by taking the line width and the interval of the key area of the layout to be corrected as judgment conditions to obtain the corrected layout.
8. The correction method according to claim 1, characterized in that: and the exposure condition of the mask manufactured based on the corrected layout is the same as the exposure condition of the mask based on the test pattern.
9. An optical proximity effect correction apparatus, comprising:
an acquisition unit for acquiring a test pattern;
an exposure unit configured to expose a mask based on the test pattern to obtain exposure data;
the establishing unit is used for establishing an OPC (optical proximity correction) first rule base based on the corresponding relation between the data of the test pattern and the exposure data;
the processing unit is used for determining a key area of the layout to be corrected and acquiring the graphic characteristic parameters of the key area;
the screening unit is used for screening the OPC first rule base according to the graphic characteristic parameters of the key area to obtain an OPC second rule base;
and the correcting unit is used for correcting the layout to be corrected based on the OPC second rule base to obtain a corrected layout, and manufacturing a mask for exposure based on the corrected layout.
10. A mask, comprising: a mask formed by the correction method described in any one of claims 1 to 8.
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