CN110707117B - Flat panel detector - Google Patents
Flat panel detector Download PDFInfo
- Publication number
- CN110707117B CN110707117B CN201911090235.3A CN201911090235A CN110707117B CN 110707117 B CN110707117 B CN 110707117B CN 201911090235 A CN201911090235 A CN 201911090235A CN 110707117 B CN110707117 B CN 110707117B
- Authority
- CN
- China
- Prior art keywords
- layer
- scintillator
- scintillator material
- material layer
- flat panel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000463 material Substances 0.000 claims abstract description 115
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000013078 crystal Substances 0.000 claims abstract description 16
- 238000004806 packaging method and process Methods 0.000 claims abstract description 10
- 238000005538 encapsulation Methods 0.000 claims description 25
- 239000011347 resin Substances 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 10
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 9
- 239000011368 organic material Substances 0.000 claims description 6
- 239000000565 sealant Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 19
- 238000012360 testing method Methods 0.000 abstract description 15
- 229920006280 packaging film Polymers 0.000 abstract description 4
- 239000012785 packaging film Substances 0.000 abstract description 4
- 208000013201 Stress fracture Diseases 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 6
- 238000003384 imaging method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000002601 radiography Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000012945 sealing adhesive Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
- G01T1/2023—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Molecular Biology (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Toxicology (AREA)
- Measurement Of Radiation (AREA)
Abstract
The invention relates to the technical field of digital X-ray photography and discloses a flat panel detector. The flat panel detector comprises an array substrate, packaging layers, a first scintillator material layer, a buffer layer and a second scintillator material layer, wherein the first scintillator material layer, the buffer layer and the second scintillator material layer are located between the array substrate and the packaging layers and are sequentially arranged. In the flat panel detector, the two scintillator layers are arranged, and compared with the arrangement of only one scintillator layer, the length of the crystal column of the scintillator material of each layer in the two scintillator layers is shorter, so that the probability of stress fracture and peeling of the crystal column can be effectively reduced, and the stability and yield of the scintillator material layer are increased; and a buffer layer is arranged between the two scintillator layers, and when the packaging film shrinks and pulls the scintillator layers, the buffer layer can absorb stress, so that the defects caused by stress of the bottom scintillator layer are avoided. Therefore, in the flat panel detector, the scintillator material layer has good stability, is not easy to generate badness in the reliability test, and can effectively improve the defect of the test image.
Description
Technical Field
The invention relates to the technical field of digital X-ray photography, in particular to a flat panel detector.
Background
Digital Radiography (DR) is a new X-ray Radiography technology developed in the last 90 th century, and has the obvious advantages of higher imaging speed, more convenient operation, higher imaging resolution and the like, so that the Digital Radiography technology becomes the leading direction of the Digital Radiography technology and is approved by clinical institutions and imaging experts of all countries in the world. The technical core of DR is a flat panel detector, which is a precise and expensive device and plays a decisive role in the imaging quality.
As shown in fig. 1, a conventional flat panel detector product mainly includes an array substrate 10, a scintillator material layer 30 and an encapsulation layer 20. Taking a cesium iodide flat Panel detector product as an example, the encapsulation method specifically includes evaporating a cesium iodide (CsI) layer on an array substrate (Panel), then attaching an encapsulation film to the upper surface of the CsI in a vacuum environment, and curing and bonding the periphery of the encapsulation film around the Panel by using an optical adhesive (UV adhesive), wherein the encapsulation film is usually an aluminum film + PET laminated structure. The reliability evaluation of the product is generally carried out to assess the characteristics and the packaging stability of the product, however, under the high and low temperature cyclic impact (-20-60 ℃, 30 cycles) condition of the reliability test, the aluminum film in the packaging film is easy to shrink frequently, and pulls and scrapes the Slope region (Slope region, such as the dashed frame region in fig. 1) around the CsI, and the CsI column is often pulled apart, so that the defects (defects) of four sides and four corners displayed on the test image are serious.
Disclosure of Invention
The invention discloses a flat panel detector, and aims to improve the defect of a test image of the flat panel detector.
In order to achieve the purpose, the invention provides the following technical scheme:
the utility model provides a flat panel detector, includes array substrate, packaging layer and is located array substrate with between the packaging layer and the first scintillator material layer, buffer layer and the second scintillator material layer that set gradually.
In the flat panel detector, the first scintillator material layer and the second scintillator material layer are arranged, and compared with the arrangement of only one scintillator layer, the length of the crystal column of the scintillator material on each of the two scintillator layers is shorter, so that the probability of stress fracture and peeling of the crystal column can be effectively reduced, and the stability and yield of the scintillator material layer are improved; and a buffer layer is arranged between the two scintillator layers, when the packaging film shrinks and draws the peripheral slope of the scintillator layer in a reliability test, the buffer layer can generate micro deformation, absorb part of stress and buffer the drawing force, so that the bottom scintillator layer (the scintillator layer close to the array substrate) is effectively protected from being influenced by external force, and defects (such as crystal column breakage, material layer peeling and the like) caused by stress of the bottom scintillator layer are avoided. In summary, the flat panel detector provided by the embodiment of the invention has the advantages that the scintillator material layer has good stability, is not easy to generate defects in the reliability test, and can effectively improve the test image defects of the flat panel detector.
Optionally, the buffer layer is an organic material.
Optionally, the buffer layer is made of a resin material.
Optionally, the buffer layer is configured as a light diffusion layer.
Optionally, the buffer layer includes a resin material and scattering particles distributed in the resin material.
Optionally, the scattering particles have a diameter of 1 μm to 20 μm.
Optionally, a surface of the buffer layer facing the encapsulation layer has a protrusion structure, and a diameter of the protrusion structure is 10 μm to 100 μm.
Optionally, the first scintillator material layer and the second scintillator material layer are scintillator materials formed by adopting a crystal column growth mode.
Optionally, the first scintillator material layer and the second scintillator material layer are cesium iodide materials.
Optionally, the first scintillator material layer is close to the array substrate, and the second scintillator material layer is close to the encapsulation layer;
the thickness of the first scintillator material layer is greater than the thickness of the second scintillator material layer.
Optionally, the sum of the thicknesses of the first scintillator material layer and the second scintillator material layer is 250 μm to 600 μm.
Optionally, projections of the first scintillator material layer and the second scintillator material layer on the array substrate are located in a projection of the organic buffer layer and in a projection of the encapsulation layer;
The flat panel detector further comprises a sealant positioned between the organic buffer layer and the packaging layer, wherein the sealant surrounds the second scintillator material layer and is configured to bond the edge of the organic buffer layer with the edge of the packaging layer in a sealing manner.
Drawings
FIG. 1 is a schematic cross-sectional view of a flat panel detector in the prior art;
fig. 2 is a schematic cross-sectional structural diagram of a flat panel detector according to an embodiment of the present invention;
fig. 3 is a schematic cross-sectional structural diagram of a flat panel detector according to another embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 2 and fig. 3, an embodiment of the present invention provides a flat panel detector, which includes an array substrate 1, an encapsulation layer 2, and a first scintillator material layer 31, a buffer layer 4, and a second scintillator material layer 32, which are located between the array substrate 1 and the encapsulation layer 2 and are sequentially disposed.
In the flat panel detector, the first scintillator material layer 31 and the second scintillator material layer 32 are arranged, and compared with the arrangement of only one scintillator layer, the length of the crystal column of the scintillator material on each of the two scintillator layers is shorter, so that the probability of stress fracture and peeling of the crystal column can be effectively reduced, and the stability and yield of the scintillator material layer are improved; and, be provided with buffer layer 4 between two scintillator layers, when the packaging film shrink draws the slope all around of scintillator layer in the trust test, buffer layer 4 can produce the micro-deformation, absorbs partly stress, cushions the pulling force to effectively protect bottom scintillator layer (the scintillator layer that is close to array substrate 1) not influenced by external force, avoid bottom scintillator layer atress to lead to the fact badly (for example the crystal column is broken, the material layer is peeled off the scheduling is unfavorable). In summary, the flat panel detector provided by the embodiment of the invention has the advantages that the stability of the scintillator material layer is better, the poor performance is not easy to occur in the reliability test, and the defect of the test image of the flat panel detector can be effectively improved.
Specifically, in the flat panel detector, the scintillator material layer is used for converting X-Ray into visible light, the array substrate is used for sensing the intensity of the visible light in the direction perpendicular to the array substrate and converting a visible light signal into an electric signal to realize imaging, and the array substrate specifically comprises a substrate and a Photodiode (PIN) and a thin film transistor (PIN) array and other structures arranged on the substrate.
Specifically, the encapsulation layer is used for sealing and protecting the scintillator material layer, specifically, a laminated structure of an aluminum film and polyethylene terephthalate (PET).
In a specific embodiment of the flat panel detector according to the embodiment of the present invention, the first scintillator material layer 31 and the second scintillator material layer 32 may be scintillator materials formed by using a crystal pillar growth manner, that is, the scintillator material layer is in the form of a crystal pillar extending perpendicular to the direction of the substrate base plate 1.
Illustratively, the first scintillator material layer 31 and the second scintillator material layer 32 may be cesium iodide materials.
Of course, the scintillator material in the flat panel detector according to the embodiment of the present invention is not limited to the above-described embodiment, and may be other materials; moreover, the first scintillator material layer 31 and the second scintillator material layer 32 in the embodiment of the present invention may be made of the same material, or may be made of different materials, which may be determined according to actual needs.
In a specific embodiment, the first scintillator material layer is adjacent to the array substrate, and the second scintillator material layer is adjacent to the encapsulation layer. Of course, it is also possible that the first scintillator material layer is adjacent to the encapsulation layer and the second scintillator material layer is adjacent to the array substrate.
Next, as shown in fig. 2 and fig. 3, a specific embodiment of the flat panel detector of the present invention will be illustrated by taking an example in which the first scintillator material layer 31 is close to the array substrate 1 and the second scintillator material layer 32 is close to the encapsulation layer 2.
In a specific embodiment, the buffer layer 4 is an organic material.
For example, the buffer layer 4 may be made of resin (resin).
On one hand, the organic material has strong deformability and good buffering performance, and can effectively protect the bottom scintillator layer (the first scintillator material layer 31) from being affected by external force to cause defects; on the other hand, the bonding force and the stability of the crystal column of the scintillator material layer and the organic material layer are excellent, the buffer layer 4 is set as the organic material layer, the bonding force of the contact interfaces of the first scintillator material layer 31 and the second scintillator material layer 32 with the buffer layer 4 respectively is high, and the high peel strength is achieved, so that the first scintillator material layer 31 and the second scintillator material layer 32 can be effectively prevented from being peeled off at the interface contacted with the buffer layer 4, and the effect of improving the yield of the two scintillator layers is remarkable.
In a particular embodiment, the buffer layer 4 may be configured as a light diffusion layer.
Specifically, the scintillator layer is used for converting X-Ray into visible light, if a crystal column of the scintillator layer is defective, the intensity of the visible light at the defective position and the intensity of the visible light at the peripheral position in the direction perpendicular to the array substrate are obviously different, and after the light intensity difference is sensed by a Photodiode (PIN) array, scattered point defects (defects) are easily caused to appear on a tested bright image. Although the two scintillator layers in the embodiment of the present application have better stability and yield compared to one scintillator layer in the conventional technology, the second scintillator material layer 32 is close to the encapsulation layer 2 and lacks the protection of the buffer layer 4, so that a certain defect may also occur during the reliability test, resulting in a defect of testing a bright image. In the embodiment of the present application, the buffer layer 4 is configured as a light diffusion layer, and when the second scintillator material layer 32 is poor in reliability test, the light diffusion layer can atomize and homogenize the visible light converted by the second scintillator material layer 32, reduce the local brightness difference, and weaken the influence of the poor second scintillator material layer 32 on the brightness image, thereby reducing the scattered point defects (defects) on the test bright image, and effectively improving the image quality.
In a specific embodiment, as shown in fig. 2, the buffer layer 4 may include a resin material and scattering particles 41 distributed in the resin material; the scattering particles 41 are transparent particles 41, and the buffer layer 4 can have a certain haze, thereby achieving a light diffusion effect.
Specifically, the diameter of the scattering particles 41 may be 1 μm to 20 μm.
In another specific embodiment, as shown in fig. 3, a surface of the buffer layer 4 facing the encapsulation layer 2 has a Bump structure (Bump)42, and the Bump structure 42 can perform a light diffusion effect.
Specifically, the diameter of the protruding structure 42 may be 10 μm to 100 μm.
Specifically, the protruding structures 42 on the surface of the buffer layer 4 or the scattering particles 41 in the buffer layer 4 can play a role in light diffusion, and on the other hand, the surface roughness of the buffer layer 4 can be increased, so that the bonding force between the top layer scintillator layer (second scintillator material layer 32) and the buffer layer 4 is increased, the probability of crystal column peeling of the second scintillator material layer 32 is reduced, and the yield of the second scintillator material layer 32 is improved.
In a specific embodiment, as shown in fig. 2 and 3, the thickness of the first scintillator material layer 31 is greater than the thickness of the second scintillator material layer 32, i.e. the thickness of the scintillator material layer near the array substrate 1 is greater than the thickness of the scintillator material layer near the encapsulation layer 2.
Specifically, the first scintillator material layer 31 is far away from the package layer 2 and protected by the buffer layer 4, so that defects caused by pulling of the package layer 2 can be effectively avoided, and in comparison, the second scintillator material layer 32 is more prone to defects; further, by setting the thickness of the second scintillator material layer to be small, the crystal pillars are made short, and the probability of occurrence of defects in the second scintillator material layer 32 can be reduced. Also, when the buffer layer 4 is configured as a light diffusion layer, the contribution of the visible light converted by the second scintillator material layer 32 to the image resolution is small, and therefore, setting the thickness of the first scintillator material layer 31 to be large has a significant effect on improving the image resolution.
Illustratively, in the flat panel detector according to the embodiment of the present invention, the sum of the thicknesses of the first scintillator material layer 31 and the second scintillator material layer 32 is about 250 μm to about 600 μm. The thickness setting can ensure the sensitivity (sensitivity) of the flat panel detector.
In a specific embodiment, as shown in fig. 2 and 3, the projections of the first scintillator material layer 31 and the second scintillator material layer 32 on the array substrate 1 are located in the projection of the buffer layer 4 and in the projection of the package layer 2, that is, the buffer layer 4 and the package layer 2 both extend beyond the edges of the first scintillator material layer 31 and the second scintillator material layer 32, so as to completely cover and protect the scintillator layer.
Specifically, as shown in fig. 2 and fig. 3, the flat panel detector further includes a sealant 5 located between the buffer layer 4 and the encapsulation layer 2, where the sealant 5 is disposed around the second scintillator material layer 32 and configured to hermetically bond the edge of the buffer layer 4 and the edge of the encapsulation layer 2.
Specifically, as shown in fig. 2, the flat panel detector further includes a frame sealing adhesive (UV adhesive) 6 disposed around the buffer layer 4 and the encapsulation layer 2, and the frame sealing adhesive 6 is used for curing and bonding the peripheral edges of the buffer layer 4 and the encapsulation layer 2 on the array substrate 1.
It will be apparent to those skilled in the art that various changes and modifications may be made in the embodiments of the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (8)
1. The flat panel detector is characterized by comprising an array substrate, an encapsulation layer, and a first scintillator material layer, a buffer layer and a second scintillator material layer which are arranged between the array substrate and the encapsulation layer in sequence; the buffer layer is configured as a light diffusion layer, and comprises a resin material and scattering particles distributed in the resin material; the diameter of the scattering particles is 1-20 μm;
The first scintillator material layer is close to the array substrate, and the second scintillator material layer is close to the packaging layer;
a thickness of the first scintillator material layer is greater than a thickness of the second scintillator material layer;
the projection of the second scintillator material layer on the substrate base plate falls within the projection of the first scintillator material layer on the substrate base plate.
2. The flat panel detector as claimed in claim 1, wherein the buffer layer is an organic material.
3. The flat panel detector as claimed in claim 2, wherein the buffer layer is a resin material.
4. The flat panel detector as claimed in claim 1, wherein a surface of the buffer layer facing the encapsulation layer has a protrusion structure, and the protrusion structure has a diameter of 10 μm to 100 μm.
5. The flat panel detector as claimed in claim 1, wherein the first scintillator material layer and the second scintillator material layer are scintillator materials formed by using a crystal pillar growth method.
6. The flat panel detector as claimed in claim 5, wherein the first and second layers of scintillator material are cesium iodide material.
7. The flat panel detector according to claim 1, wherein the sum of the thicknesses of the first scintillator material layer and the second scintillator material layer is 250 μ ι η to 600 μ ι η.
8. The flat panel detector of claim 1, wherein projections of the first and second layers of scintillator material on the array substrate are within a projection of the buffer layer and within a projection of the encapsulation layer;
the flat panel detector further comprises a sealant located between the buffer layer and the packaging layer, wherein the sealant surrounds the second scintillator material layer and is configured to seal and bond the edge of the buffer layer with the edge of the packaging layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911090235.3A CN110707117B (en) | 2019-11-08 | 2019-11-08 | Flat panel detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911090235.3A CN110707117B (en) | 2019-11-08 | 2019-11-08 | Flat panel detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110707117A CN110707117A (en) | 2020-01-17 |
| CN110707117B true CN110707117B (en) | 2022-07-29 |
Family
ID=69204817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911090235.3A Active CN110707117B (en) | 2019-11-08 | 2019-11-08 | Flat panel detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110707117B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114639689A (en) * | 2020-12-15 | 2022-06-17 | 京东方科技集团股份有限公司 | Flat panel detector, manufacturing method thereof and X-ray imaging system |
| CN113135004A (en) * | 2021-04-26 | 2021-07-20 | 昆山雅锋电子有限公司 | Application of aluminum foil/reflecting film in cesium iodide flat panel detector |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1270318A (en) * | 1998-12-28 | 2000-10-18 | 东芝株式会社 | Radiation detector |
| CN1809762A (en) * | 2003-10-22 | 2006-07-26 | 佳能株式会社 | Radiation detection device, scintillator panel, method of making the same, making apparatus, and radiation image pick-up system |
| CN106443754A (en) * | 2016-11-16 | 2017-02-22 | 奕瑞影像科技（太仓）有限公司 | X-ray image capturing device |
-
2019
- 2019-11-08 CN CN201911090235.3A patent/CN110707117B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1270318A (en) * | 1998-12-28 | 2000-10-18 | 东芝株式会社 | Radiation detector |
| CN1809762A (en) * | 2003-10-22 | 2006-07-26 | 佳能株式会社 | Radiation detection device, scintillator panel, method of making the same, making apparatus, and radiation image pick-up system |
| CN106443754A (en) * | 2016-11-16 | 2017-02-22 | 奕瑞影像科技（太仓）有限公司 | X-ray image capturing device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110707117A (en) | 2020-01-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8497481B2 (en) | Radiation detector and method for manufacturing same | |
| CN110707117B (en) | Flat panel detector | |
| US8853808B2 (en) | Radiation detector | |
| US8957383B2 (en) | Radiation detection apparatus and radiation detection system | |
| US11309451B2 (en) | Flat panel detector and manufacturing method thereof | |
| US20070257198A1 (en) | Radiation Detecting Apparatus, Scintillator Panel, Their Manufacturing Method and Radiation Detecting System | |
| JP5905672B2 (en) | Radiation detector and manufacturing method thereof | |
| US20210149089A1 (en) | Display device | |
| US7759708B2 (en) | Solid-state imaging apparatus | |
| CN107507844A (en) | Flexible X-ray imaging sensor and preparation method thereof | |
| TW201506434A (en) | Radiation detector and manufacturing method thereof | |
| US10361240B2 (en) | Bendable X-ray sensor | |
| TWI486618B (en) | Radiation detector and manufacturing method thereof | |
| JPH0888339A (en) | Solid-state image sensing device | |
| US9513383B1 (en) | Scintillator sealing with foil | |
| JP2002289821A (en) | Flat-panel type image sensor | |
| JP2018179514A (en) | Radiation detector | |
| WO2020100809A1 (en) | Radiation detection module, radiation detector, and radiation detection module production method | |
| KR20110063244A (en) | X-ray detector and method for the same | |
| WO2023206316A1 (en) | Detection substrate, manufacturing method therefor, and flat panel detector | |
| JP2008292401A (en) | Radiation detector | |
| US20230010944A1 (en) | Adhesive sheet and method for manufacturing display device using the same | |
| JP2004271344A (en) | Scintillator panel, radiation detection device, and radiation imaging systems | |
| JP2024051180A (en) | Radiation imaging panel, radiation imaging device, radiation imaging system, method for manufacturing radiation imaging panel, and scintillator plate | |
| EP3940429B1 (en) | Radiation imaging panel, radiation imaging apparatus, radiation imaging system, and scintillator plate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |