CN110699569A - 一种晶粒分布稳固的键合银丝材料及其制备方法 - Google Patents
一种晶粒分布稳固的键合银丝材料及其制备方法 Download PDFInfo
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 72
- 239000000463 material Substances 0.000 title claims abstract description 71
- 239000013078 crystal Substances 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052709 silver Inorganic materials 0.000 claims abstract description 40
- 239000004332 silver Substances 0.000 claims abstract description 40
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 18
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052737 gold Inorganic materials 0.000 claims abstract description 16
- 239000010931 gold Substances 0.000 claims abstract description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000000956 alloy Substances 0.000 claims abstract description 14
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 14
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims abstract description 14
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 13
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 13
- 239000011651 chromium Substances 0.000 claims abstract description 13
- 229910052802 copper Inorganic materials 0.000 claims abstract description 13
- 239000010949 copper Substances 0.000 claims abstract description 13
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 12
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims abstract description 12
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 11
- 239000011575 calcium Substances 0.000 claims abstract description 11
- 239000011573 trace mineral Substances 0.000 claims abstract description 7
- 235000013619 trace mineral Nutrition 0.000 claims abstract description 7
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 4
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052738 indium Inorganic materials 0.000 claims abstract description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 4
- 239000011669 selenium Substances 0.000 claims abstract description 4
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000002844 melting Methods 0.000 claims description 41
- 230000008018 melting Effects 0.000 claims description 41
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 238000002156 mixing Methods 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- LJCRYLPRAFNGFA-UHFFFAOYSA-N [Au].[Ag].[Cr] Chemical compound [Au].[Ag].[Cr] LJCRYLPRAFNGFA-UHFFFAOYSA-N 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 230000003064 anti-oxidating effect Effects 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 238000001291 vacuum drying Methods 0.000 claims description 8
- 238000009749 continuous casting Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- YSFHRHQJDPRCHZ-UHFFFAOYSA-N scandium silver Chemical compound [Sc].[Ag] YSFHRHQJDPRCHZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 239000003575 carbonaceous material Substances 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000007873 sieving Methods 0.000 claims description 4
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 238000003786 synthesis reaction Methods 0.000 abstract description 6
- 150000002739 metals Chemical class 0.000 abstract description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- RZVXOCDCIIFGGH-UHFFFAOYSA-N chromium gold Chemical compound [Cr].[Au] RZVXOCDCIIFGGH-UHFFFAOYSA-N 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229910021654 trace metal Inorganic materials 0.000 description 1
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- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
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Abstract
本发明属于键合丝材料的技术领域,涉及一种晶粒分布稳固的键合银丝材料及其制备方法。该材料的组成成分包括银98%±0.2%、铬0.5%±0.04%、金0.5%±0.03%、钪0.45%±0.04%、钯0.45%±0.02%、钙0.01%±0.001%、镧0.01%±0.004%以及铜0.01%±0.001%,还包括其它微量元素0.001%±0.0001%,微量元素包括铟、铈、钇、硒中的一种或以上;该材料内部为比较稳定、稳固的晶粒形貌,其制备过程使得金属晶粒能够充分分布均匀,提高键合银丝材料合成过程中各成分晶粒的充分吻合,优化各金属合成的之后的晶粒形貌,提高合金丝材料的化学稳定性和机械性能。
Description
技术领域
本发明属于键合丝材料的技术领域,具体涉及一种晶粒分布稳固的键合银丝材料及其制备方法。
背景技术
近年来,银在电子领域的的应用越来越受到重视,且随着半导体和电子行业的发展,对键合丝材料的性能要求也越来越高。
目前对键合丝材料的研究进展中,键合铜丝产品的发展比较好,虽然键合铜丝产品的价格有优势,但其存在抗氧化性能差且机械性能不够优异等问题,会影响使用元件的稳定性和工作效率,增加了生产成本和使用成本,硬度大会造成芯片的损坏,影响成品率。
金属银具有导电性能优异的特点,其电阻率为1.586μΩ·cm在所有金属中最小,还具有比较好的散热性能,但是纯银在大气中容易氧化,熔化成球时,球的表面不光滑导致其使用寿命不长,且纯银的机械性能比较差,延展性较差等问题。
现有的银基键合丝材料中,虽然具有不错的抗氧化性、机械强度等优势,但大多数材料内部的晶粒形貌分布比较不均匀,会造成键合丝材料的键合性能以及使用。
发明内容
针对以上问题,本发明的目的在于提供一种晶粒分布稳固的检核银丝材料及其制备方法,使得金属银更好的用于合成键合丝材料,充分发挥金属银的优势,减少金的使用量,减少成本,并通过添加稀有金属、微量金属元素合成键合性能优异的键合银丝材料。
本发明的发明内容如下:
一种晶粒分布稳固的键合银丝材料,该材料的组成成分包括银98%±0.2%、铬0.5%±0.04%、金0.5%±0.03%、钪0.45%±0.04%、钯0.45%±0.02%、钙0.01%±0.001%、镧0.01%±0.004%以及铜0.01%±0.001%;
该材料的组成成分还包括其它微量元素0.001%±0.0001%,微量元素包括铟、铈、钇、硒中的一种或以上;
该材料的内部形成分布均匀且紧密的金属晶粒形貌,晶粒尺寸为2~10μm;
各组成成分的纯度大于99%。
本发明还提供了一种晶粒分布稳固的键合银丝材料的制备方法,包括如下步骤:
1)预处理:分别将银、铬、金、钪、钯、钙、镧以及铜物质采用氩气清洗之后,磨成粉过筛,之后预热至50~60℃进行真空干燥,同时采用还原碳材料给金属物质进行除氧处理,
2)制备银金铬熔融物:取金属银、金和铬混合放入坩埚中,采用真空熔炼,一开始的熔炼温度升至860~920℃并维持10~30分钟,再升温至975~1030℃并维持10~50分钟,再升温至1750~1830℃并维持20~60分钟,整个过程的升温速度为110~350℃/h,熔解完成即得到银金铬熔融物;
3)制备银钪钯熔融物:取金属银、钪和钯混合放入坩埚中,采用真空熔炼,一开始的熔炼温度升至860~920℃并维持10~30分钟,再升温至1480~1520℃并维持20~60分钟,整个过程的升温速度为200~350℃/h,熔解完成即得到银钪钯熔融物;
4)连铸键合棒材料:取金属钙、镧、铜、剩余的银以及银金铬熔融物和银钪钯熔融物混合放入坩埚中,采用真空熔炼,一开始的熔炼温度升至800~1000℃并维持15~30分钟,再升温至1460~1500℃并维持20~50分钟,整个过程的升温速度为175~225℃/h,熔融之后进行连铸的速度25~50mm/min,形成键合棒材料;
5)拉丝:将键合棒材料进行拉拔制得细丝,每道次平均变形量为10~15%,形成预定线径的合金线材料;
6)退火:细丝在570~620℃温度条件下退火3~6小时,退火处理可消除合金丝冷加工应力,优化了合金晶粒尺寸,进一步提高合金丝的综合性能,退火之后的合金丝表面涂覆混合醇进行防氧化处理,之后进行真空干燥即得键合银丝;
步骤1)所述的还原碳材料包括一氧化碳以及活性炭,能够实现合成过程中的除氧处理;
步骤2)至步骤4)所述坩埚为氮化硅坩埚或者碳化硅坩埚,氮化硅或者碳化硅材质的坩埚能够促进合金材料的熔融结合,提高键合性,还能够进一步达到防氧化的效果;
所述真空熔炼的真空压力条件为10-2~10-4Pa,采用真空能够降低金属材料的熔点,减少成本,也是进一步达到合成过程中的材料的防氧化;
所述步骤2)至步骤6)的操作均置于氢氮气环境中进行,所述氢氮气为氢气和氮气的混合气体,氢气的含量大于3.5%且小于5%,形成效果较好的防氧化保护;
步骤5)所述拉丝包括粗拉、中拉、细拉和微细拉,粗拉的目标直径为1~2mm,中拉的目标直径为0.5~0.8mm,细拉的目标直径为0.06~0.07mm,微细拉的目标直径为0.01~0.05mm。
本发明的有益效果如下:
本发明的的晶粒分布稳固的键合银丝材料,相比现有技术,采用的较高含量的金属银成分、结合较低含量的金以及其它不同比例的稀有元素和微量元素,不仅降低了原料成本,该材料的内部形成分布均匀且紧密的金属晶粒形貌,由于其稳定、稳固的晶粒形貌促进形成键合性能较为优异的键合银丝材料,同时,金属铬优化材料的电子结构、提高导电性能,金属钪能够同时改善其化学性能和机械性能,提高材料的强度、保持材料的塑形且提高耐腐蚀性,金属钯的加入提高了材料的抗氧化性能、抗腐蚀性以及抗变色性,金属镧的加入提高了键合材料的可焊接性;
本发明的的晶粒分布稳固的键合银丝材料的制备方法,本发明的高成球性的键合银丝材料的制备方法,主要通过分步使得各个金属成分分开熔融合成,使得金属晶粒能够充分分布均匀,提高键合银丝材料合成过程中各成分晶粒的充分吻合,优化各金属合成的之后的晶粒形貌,提高合金丝材料的化学稳定性和机械性能等,相比现有技术,所用原料成本较低,能够满足工业化生产且能满足应用于IC集成电路、半导体分立器件、LED等高端电路产品的性能需求。
说明书附图
图1为本发明的键合银丝材料的晶粒形貌图;
图2为金属银、金和铜的键合丝材料的晶粒形貌图。
具体实施方式
以下通过具体的实施案例以及附图说明对本发明作进一步详细的描述,应理解这些实施例仅用于说明本发明而不用于限制本发明的保护范围,在阅读了本发明之后,本领域技术人员对本发明的各种等价形式的修改均落于本申请所附权利要求所限定。
若无特殊说明,本发明的所有原料和试剂均为常规市场的原料、试剂。
实施例1
一种晶粒分布稳固的键合银丝材料的制备方法:
1)预处理:分别将银、铬、金、钪、钯、钙、镧以及铜物质采用氩气清洗之后,磨成粉过筛,之后预热至50~60℃进行真空干燥,同时采用活性炭给金属物质进行除氧处理,
2)制备银金铬熔融物:取金属银20%±0.2%、金0.5%±0.03%和铬0.5%±0.04%混合放入碳化硅坩埚中,采用真空熔炼,一开始的熔炼温度升至860~920℃并维持10~30分钟,再升温至975~1030℃并维持10~50分钟,再升温至1750~1830℃并维持20~60分钟,整个过程的升温速度为110~350℃/h,熔解完成即得到银金铬熔融物;
3)制备银钪钯熔融物:取金属银20%±0.2%、钪0.45%±0.04%和钯0.45%±0.02%混合放入碳化硅坩埚中,采用真空熔炼,一开始的熔炼温度升至860~920℃并维持10~30分钟,再升温至1480~1520℃并维持20~60分钟,整个过程的升温速度为200~350℃/h,熔解完成即得到银钪钯熔融物;
4)连铸键合棒材料:取金属钙0.01%±0.001%、镧0.01%±0.004%、铜0.01%±0.001%、铟和/或铈0.001±0.0001%、剩余的银58%±0.2%以及银金铬熔融物和银钪钯熔融物混合放入碳化硅坩埚中,采用真空熔炼,一开始的熔炼温度升至800~1000℃并维持15~30分钟,再升温至1460~1500℃并维持20~50分钟,整个过程的升温速度为175~225℃/h,熔融之后进行连铸的速度25~50mm/min,形成键合棒材料;
5)拉丝:将键合棒材料进行拉拔制得细丝,每道次平均变形量为10~15%,形成预定线径的合金线材料;
6)退火:细丝在570~620℃温度条件下退火3~6小时,退火之后的合金丝表面涂覆混合醇进行防氧化处理,之后进行真空干燥即得键合银丝;
所述真空熔炼的真空压力条件为10-2~10-4Pa;
所述步骤2)至步骤6)的操作均置于氢氮气环境中进行,所述氢氮气为氢气和氮气的混合气体,氢气的含量大于3.5%且小于5%,形成效果较好的防氧化保护;
步骤5)所述拉丝包括粗拉、中拉、细拉和微细拉,粗拉的目标直径为1~2mm,中拉的目标直径为0.5~0.8mm,细拉的目标直径为0.06~0.07mm,微细拉的目标直径为0.01~0.05mm。
实施例2
一种晶粒分布稳固的键合银丝材料的制备方法:
1)预处理:分别将银、铬、金、钪、钯、钙、镧以及铜物质采用氩气清洗之后,磨成粉过筛,之后预热至50~60℃进行真空干燥,同时采用一氧化碳给金属物质进行除氧处理,
2)制备银金铬熔融物:取金属银20%±0.2%、金0.5%±0.03%和铬0.5%±0.04%混合放入氮化硅坩埚中,采用真空熔炼,一开始的熔炼温度升至860~920℃并维持10~30分钟,再升温至975~1030℃并维持10~50分钟,再升温至1750~1830℃并维持20~60分钟,整个过程的升温速度为110~350℃/h,熔解完成即得到银金铬熔融物;
3)制备银钪钯熔融物:取金属银20%±0.2%、钪0.45%±0.04%和钯0.45%±0.02%混合放入氮化硅坩埚中,采用真空熔炼,一开始的熔炼温度升至860~920℃并维持10~30分钟,再升温至1480~1520℃并维持20~60分钟,整个过程的升温速度为200~350℃/h,熔解完成即得到银钪钯熔融物;
4)连铸键合棒材料:取金属钙0.01%±0.001%、镧0.01%±0.004%、铜0.01%±0.001%、钇和/或硒0.001±0.0001%、剩余的银58%±0.2%以及银金铬熔融物和银钪钯熔融物混合放入氮化硅坩埚中,采用真空熔炼,一开始的熔炼温度升至800~1000℃并维持15~30分钟,再升温至1460~1500℃并维持20~50分钟,整个过程的升温速度为175~225℃/h,熔融之后进行连铸的速度25~50mm/min,形成键合棒材料;
5)拉丝:将键合棒材料进行拉拔制得细丝,每道次平均变形量为10~15%,形成预定线径的合金线材料;
6)退火:细丝在570~620℃温度条件下退火3~6小时,退火之后的合金丝表面涂覆混合醇进行防氧化处理,之后进行真空干燥即得键合银丝;
所述真空熔炼的真空压力条件为10-2~10-4Pa;
所述步骤2)至步骤6)的操作均置于氢氮气环境中进行,所述氢氮气为氢气和氮气的混合气体,氢气的含量大于3.5%且小于5%,形成效果较好的防氧化保护;
步骤5)所述拉丝包括粗拉、中拉、细拉和微细拉,粗拉的目标直径为1~2mm,中拉的目标直径为0.5~0.8mm,细拉的目标直径为0.06~0.07mm,微细拉的目标直径为0.01~0.05mm。
键合银丝材料的性能检测:
选取实施例1中的不同粗细的键合银丝材料做延伸率计算以及断裂负荷测定,结果如表一:
表一
选取实施例2中的不同粗细的键合银丝材料做延伸率计算以及断裂负荷测定,结果如表二:
表二
选取本发明实施例中的键合银丝做SEM电镜扫描,观察键合银丝的截面晶粒形貌,如图1所示,所得晶粒形貌分布比较均匀紧密、可得知得到的键合银丝的具有比较优异的键合性能;
而图2为采用金属银、金和铜制得的键合丝,通过SEM电镜扫描,观察其截面的晶粒形貌,其晶粒的尺寸差别比较大,分布不均匀,可见其键合性能远远不如不如本实施例制备得到的键合银丝材料,材料内部的晶粒形貌会影响键合丝材料的键合以及使用。
Claims (10)
1.一种晶粒分布稳固的键合银丝材料,其特征在于,该材料的组成成分包括银98%±0.2%、铬0.5%±0.04%、金0.5%±0.03%、钪0.45%±0.04%、钯0.45%±0.02%、钙0.01%±0.001%、镧0.01%±0.004%以及铜0.01%±0.001%。
2.由权利要求1所述的键合银丝材料,其特征在于,该材料的组成成分还包括其它微量元素0.001%±0.0001%,微量元素包括铟、铈、钇、硒中的一种或以上。
3.由权利要求1或2所述的键合银丝材料,其特征在于,该材料的内部形成分布均匀且紧密的金属晶粒形貌,晶粒尺寸为2~10 μm。
4.由权利要求1或2所述的键合银丝材料,其特征在于,各组成成分的纯度大于99%。
5.一种晶粒分布稳固的键合银丝材料的制备方法,其特征在于,包括如下步骤:
1)预处理:分别将银、铬、金、钪、钯、钙、镧以及铜物质采用氩气清洗之后,磨成粉过筛,之后预热至50~60℃进行真空干燥,同时采用还原碳材料给金属物质进行除氧处理,
2)制备银金铬熔融物:取金属银、金和铬混合放入坩埚中,采用真空熔炼,一开始的熔炼温度升至860~920℃并维持10~30分钟,再升温至975~1030℃并维持10~50分钟,再升温至1750~1830℃并维持20~60分钟,整个过程的升温速度为110~350℃/h,熔解完成即得到银金铬熔融物;
3)制备银钪钯熔融物:取金属银、钪和钯混合放入坩埚中,采用真空熔炼,一开始的熔炼温度升至860~920℃并维持10~30分钟,再升温至1480~1520℃并维持20~60分钟,整个过程的升温速度为200~350℃/h,熔解完成即得到银钪钯熔融物;
4)连铸键合棒材料:取金属钙、镧、铜、剩余的银以及银金铬熔融物和银钪钯熔融物混合放入坩埚中,采用真空熔炼,一开始的熔炼温度升至800~1000℃并维持15~30分钟,再升温至1460~1500℃并维持20~50分钟,整个过程的升温速度为175~225℃/h,熔融之后进行连铸的速度25~50 mm/min,形成键合棒材料;
5)拉丝:将键合棒材料进行拉拔制得细丝,每道次平均变形量为10~15%,形成预定线径的合金线材料;
6)退火:细丝在570~620℃温度条件下退火3~6小时,退火之后的合金丝表面涂覆混合醇进行防氧化处理,之后进行真空干燥即得键合银丝。
6.由权利要求5所述的键合银丝材料的制备方法,其特征在于,步骤1)所述的还原碳材料包括一氧化碳以及活性炭。
7.由权利要求5所述的键合银丝材料的制备方法,其特征在于,步骤2)至步骤4)所述坩埚为氮化硅坩埚或者碳化硅坩埚。
8.由权利要求5或7所述的键合银丝材料的制备方法,其特征在于,所述真空熔炼的真空压力条件为10-2~10-4 Pa。
9.由权利要求5所述的键合银丝材料的制备方法,其特征在于,所述步骤2)至步骤6)的操作均置于氢氮气环境中进行,所述氢氮气为氢气和氮气的混合气体,氢气的含量大于3.5%且小于5%。
10.由权利要求5或9所述的键合银丝材料的制备方法,其特征在于,步骤5)所述拉丝包括粗拉、中拉、细拉和微细拉,粗拉的目标直径为1~2 mm,中拉的目标直径为0.5~0.8 mm,细拉的目标直径为0.06~0.07 mm,微细拉的目标直径为0.01~0.05 mm。
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