CN110690313A - 一种Si衬底MoS2近红外光探测器及制备方法 - Google Patents
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Abstract
本发明公开了一种Si衬底MoS2近红外光探测器及制备方法,从下到上依次包括Si衬底、MoS2功能层及Ni/Au金属层电极,所述Ni/Au金属层电极位于MoS2功能层上表面的两端,所述MoS2功能层的上表面镀一层纳米级的Ag颗粒。本发明有效降低表面对近红外光的反射损耗,增强近红外光谐振吸收,实现高灵敏度高带宽探测。
Description
技术领域
本发明涉及近红外光探测器领域,具体涉及一种Si衬底MoS2近红外光探测器及制备方法。
背景技术
光电探测器是一种将光信号转换成为电信号的器件,普遍存在于我们日常生活中的每一个角落。而光是一种电磁波,根据其波长的不同可以分为很多种,近红外光就是其中的一种。所谓近红外光,就是指波长范围在780nm~3μm之间的光,而近红外光探测器由于特殊的光谱响应范围,在军民领域具有广泛的应用。
目前为止,得以应用的近红外光探测器按所使用材料的尺寸可以分为块状材料探测器、薄膜材料探测器和纳米材料探测器三种。块状材料探测器目前应用最广泛的是块状硅基光电探测器和InGaAs基探测器等,但是这些探测器具有很明显的缺点,就是这些材料对光的吸收率很低,因此光响应度很低;并且这些材料易碎,在柔性器件方面不能得到应用。为此人们开始寻找新型的具有更高光吸收率和柔韧性的材料,于是纳米材料探测器的研究就应运而生。
纳米薄膜材料拥有许多块状材料所不具备的光电性质,使其在光电探测领域拥有很大优势。首先,纳米材料拥有很大的比表面积,因此对光的吸收面积比较大,能够尽可能的吸收更多的光;其次,纳米材料由于其尺寸很小,使其电荷的运输时间大大缩小,从而提高响应的速度;最后,材料由于其为纳米尺寸,具有量子限域效应,当减少材料厚度时,会导致强烈的束缚激子,增强其对光的吸收效率。
虽然MoS2基探测器研究取得了显著成果,但是由于材料问题和器件问题,导致MoS2基探测器的应用效果不佳。
发明内容
为了克服现有技术存在的缺点与不足,本发明提供一种Si衬底MoS2近红外光探测器。该探测器具有外量子效率高,响应速度快、带宽高等优点。
本发明还提供一种Si衬底MoS2近红外光探测器的制备方法。
本发明采用的技术方案:
一种Si衬底MoS2近红外光探测器,从下到上依次包括Si衬底、MoS2功能层及Ni/Au金属层电极,所述Ni/Au金属层电极位于MoS2功能层上表面的两端,所述MoS2功能层的上表面镀一层纳米级的Ag颗粒。
所述MoS2功能层的厚度为10~12nm。
所述Ni/Au金属层电极为叉指电极。
Ni/Au金属层电极中Ni金属层的厚度为95~105nm,Au金属层的厚度为95~105nm。
一种Si衬底MoS2近红外光探测器,包括如下步骤:
S1在Si衬底上采用PLD低温外延方法生长MoS2功能层,所述PLD低温外延方法生长MoS2功能层的温度为440~460℃,激光能量为0.46~0.50J/cm2,生长时间为40~60min;
S2在MoS2功能层上表面匀胶、烘干、曝光、显影和氧离子处理,确定电极形状,并通过蒸镀工艺将Ni/Au金属层电极蒸镀在MoS2功能层上表面的两端。
所述S2中,烘干时间为42~48s,曝光时间为4~7s,显影时间为44~49s,氧离子处理时间为2.5~3.5min。
本发明先蒸镀Ni金属层再蒸镀Au金属层。
本发明电极的蒸镀速率为0.17~0.21nm/min。
所述生长时间为40min。
本发明的有益效果:
(1)本发明一种Si衬底MoS2近红外光探测器在820nm波段有明显的波峰,响应度为0.0213A/W,表明该探测器在近红外波段范围有较高的响应度,灵敏度高。
(2)本发明探测器的制备方法,结合PLD低温外延方法,在Si衬底上生长高质量MoS2材料,再通过光刻蒸镀工艺,在MoS2上制作Ni/Au电极,该方法具有生长的材料质量高、能在较低温度下生长、制备的器件性能好、省时高效及能耗低的特点,有利于规模化生产。
(3)本发明在探测芯片表面进行红外光增敏微纳结构设计,有效降低表面对近红外光的反射损耗,增强近红外光谱谐振吸收,实现高灵敏度高带宽探测。
附图说明
图1是本发明的结构示意图;
图2是图1的俯视结构图;
图3是采用PLD生长方法的MoS2样品的AFM测试图样;
图4是本实施例制备得到Si衬底MoS2近红外光探测器的光响应特性曲线图。
具体实施方式
下面结合实施例及附图,对本发明作进一步地详细说明,但本发明的实施方式不限于此。
实施例1
一种Si衬底MoS2近红外光探测器,如图1所示,从下到上依次排布的Si衬底1和MoS2功能层2,MoS2功能层2的上表面的两端连接Ni/Au金属层电极3。MoS2功能层2的厚度为10nm。Ni/Au金属层电极3中Ni金属层的厚度为100nm,Au金属层的厚度为100nm,所述MoS2功能层的上表面镀一层纳米级的Ag颗粒。
每层MoS2由S-Mo-S三次原子层组成,上下两层为S原子组成平面,中间为金属Mo原子层。MoS2具有特殊的能带结构,其层数对能带结构具有很大影响,随着MoS2层数的减少,其禁带宽度逐渐变大,能带由间接带隙转变为直接带隙。MoS2材料的禁带宽度在1.29~1.8eV之间。同时MoS2在低温时具有很高的电子迁移率。
本实施例还提供了所述Si衬底MoS2近红外光探测器的制备方法,包括如下步骤:
(1)在Si衬底1上采用PLD方法生长MoS2功能层2,并采用AFM分析样品表面形貌;
(2)在MoS2功能层2上表面的两端进行光刻,在MoS2功能层2上表面匀胶、烘干45s、曝光5s、显影47s和氧离子处理2.5min,确定电极形状,如图2所示,所述电极为叉指电极,通过蒸镀工艺将Ni/Au金属层电极3蒸镀在MoS2功能层2上表面的两端。
采用PLD方法生长MoS2功能层时温度为450℃,激光能量为0.48J/cm2。电极的蒸镀速率为0.18nm/min,生长时间为40min。
将制备得到的Si衬底MoS2近红外光探测器进行测试。
本发明采用PLD低温外延方法能实现交底温度条件下的生长,生长的材料无界面反应,质量比较高,有利于制备高性能器件。
图3为实施例PLD外延生长的MoS2样品的AFM测试图样。可见样品上有MoS2材料的生长,且表面粗糙度为5.9nm。测试表明PLD生长时间为40min时的表面比较平整,粗糙度很小。
图4为本实施例所得Si衬底MoS2近红外光探测器所测得的光响应特性曲线。由曲线可看出,实施例所得Si衬底MoS2近红外光探测器在820nm波段有明显的波峰,响应度为0.0213A/W。测试表明该光电探测器在近红外波段范围有高的响应度,说明该光电探测器有较高的灵敏度。
实施例2
本实施例与实施例1的制备过程相同,不同之处在于:本实施例采用PLD方法生长MoS2功能层时温度为440℃,激光能量为0.46J/cm2。生长时间为60min。
实施例3
本实施例与实施例1的制备过程相同,不同之处在于:本实施例采用PLD方法生长MoS2功能层时温度为460℃,激光能量为0.50J/cm2。生长时间为50min。
上述实施例为本发明较佳的实施方式,但本发明的实施方式并不受所述实施例的限制,其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化,均应为等效的置换方式,都包含在本发明的保护范围之内。
Claims (9)
1.一种Si衬底MoS2近红外光探测器,其特征在于,从下到上依次包括Si衬底、MoS2功能层及Ni/Au金属层电极,所述Ni/Au金属层电极位于MoS2功能层上表面的两端,所述MoS2功能层的上表面镀一层纳米级的Ag颗粒。
2.根据权利要求1所述的一种Si衬底MoS2近红外光探测器,其特征在于,所述MoS2功能层的厚度为10~12nm。
3.根据权利要求1所述的一种Si衬底MoS2近红外光探测器,其特征在于,所述Ni/Au金属层电极为叉指电极。
4.根据权利要求3所述的一种Si衬底MoS2近红外光探测器,其特征在于,Ni/Au金属层电极中Ni金属层的厚度为95~105nm,Au金属层的厚度为95~105nm。
5.一种如权利要求1-4任一项所述Si衬底MoS2近红外光探测器的制备方法,其特征在于,包括如下步骤:
S1在Si衬底上采用PLD低温外延方法生长MoS2功能层,所述PLD低温外延方法生长MoS2功能层的温度为440~460℃,激光能量为0.46~0.50J/cm2,生长时间为40~60min;
S2在MoS2功能层上表面匀胶、烘干、曝光、显影和氧离子处理,确定电极形状,并通过蒸镀工艺将Ni/Au金属层电极蒸镀在MoS2功能层上表面的两端。
6.根据权利要求5所述的制备方法,其特征在于,所述S2中,烘干时间为42~48s,曝光时间为4~7s,显影时间为44~49s,氧离子处理时间为2.5~3.5min。
7.根据权利要求5所述的制备方法,其特征在于,先蒸镀Ni金属层再蒸镀Au金属层。
8.根据权利要求5所述的制备方法,其特征在于,电极的蒸镀速率为0.17~0.21nm/min。
9.根据权利要求5所述的制备方法,其特征在于,所述生长时间为40min。
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CN111952395A (zh) * | 2020-07-20 | 2020-11-17 | 西安电子科技大学 | 一种可见光与红外双波段光输运管探测器及其制备方法 |
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