CN110690304A - Photovoltaic ceramic tile containing barrier layer and preparation method thereof - Google Patents
Photovoltaic ceramic tile containing barrier layer and preparation method thereof Download PDFInfo
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- CN110690304A CN110690304A CN201810730398.2A CN201810730398A CN110690304A CN 110690304 A CN110690304 A CN 110690304A CN 201810730398 A CN201810730398 A CN 201810730398A CN 110690304 A CN110690304 A CN 110690304A
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- layer
- barrier layer
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- solar cell
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- 230000004888 barrier function Effects 0.000 title claims abstract description 57
- 239000000919 ceramic Substances 0.000 title claims abstract description 50
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 16
- 238000002834 transmittance Methods 0.000 claims abstract description 8
- 150000004767 nitrides Chemical class 0.000 claims abstract description 6
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- 239000005416 organic matter Substances 0.000 claims abstract description 3
- 238000004544 sputter deposition Methods 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 5
- -1 polytetrafluoroethylene Polymers 0.000 claims description 5
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 5
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- LAJDTOIDXQYPCZ-UHFFFAOYSA-N [Se]=S.[Sn].[Zn].[Cu] Chemical compound [Se]=S.[Sn].[Zn].[Cu] LAJDTOIDXQYPCZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000004568 cement Substances 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical group Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910052909 inorganic silicate Inorganic materials 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 229920001971 elastomer Polymers 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000002985 plastic film Substances 0.000 claims description 2
- 229920006255 plastic film Polymers 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 229920000098 polyolefin Polymers 0.000 claims description 2
- 230000003746 surface roughness Effects 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract description 6
- 230000007774 longterm Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 239000004566 building material Substances 0.000 description 4
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000005038 ethylene vinyl acetate Substances 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 230000032683 aging Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QLOKJRIVRGCVIM-UHFFFAOYSA-N 1-[(4-methylsulfanylphenyl)methyl]piperazine Chemical compound C1=CC(SC)=CC=C1CN1CCNCC1 QLOKJRIVRGCVIM-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- SEUJAMVVGAETFN-UHFFFAOYSA-N [Cu].[Zn].S=[Sn]=[Se] Chemical compound [Cu].[Zn].S=[Sn]=[Se] SEUJAMVVGAETFN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- QCUOBSQYDGUHHT-UHFFFAOYSA-L cadmium sulfate Chemical compound [Cd+2].[O-]S([O-])(=O)=O QCUOBSQYDGUHHT-UHFFFAOYSA-L 0.000 description 1
- 229910000331 cadmium sulfate Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229940011182 cobalt acetate Drugs 0.000 description 1
- QAHREYKOYSIQPH-UHFFFAOYSA-L cobalt(II) acetate Chemical compound [Co+2].CC([O-])=O.CC([O-])=O QAHREYKOYSIQPH-UHFFFAOYSA-L 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 229920006334 epoxy coating Polymers 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229960002089 ferrous chloride Drugs 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- NMCUIPGRVMDVDB-UHFFFAOYSA-L iron dichloride Chemical compound Cl[Fe]Cl NMCUIPGRVMDVDB-UHFFFAOYSA-L 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011527 polyurethane coating Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- LQURNKRHPRARRS-UHFFFAOYSA-N zirconium(4+);tetrahypochlorite Chemical compound [Zr+4].Cl[O-].Cl[O-].Cl[O-].Cl[O-] LQURNKRHPRARRS-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- E—FIXED CONSTRUCTIONS
- E04—BUILDING
- E04D—ROOF COVERINGS; SKY-LIGHTS; GUTTERS; ROOF-WORKING TOOLS
- E04D1/00—Roof covering by making use of tiles, slates, shingles, or other small roofing elements
- E04D1/28—Roofing elements comprising two or more layers, e.g. for insulation
-
- E—FIXED CONSTRUCTIONS
- E04—BUILDING
- E04D—ROOF COVERINGS; SKY-LIGHTS; GUTTERS; ROOF-WORKING TOOLS
- E04D13/00—Special arrangements or devices in connection with roof coverings; Protection against birds; Roof drainage ; Sky-lights
-
- E—FIXED CONSTRUCTIONS
- E04—BUILDING
- E04F—FINISHING WORK ON BUILDINGS, e.g. STAIRS, FLOORS
- E04F13/00—Coverings or linings, e.g. for walls or ceilings
- E04F13/07—Coverings or linings, e.g. for walls or ceilings composed of covering or lining elements; Sub-structures therefor; Fastening means therefor
- E04F13/08—Coverings or linings, e.g. for walls or ceilings composed of covering or lining elements; Sub-structures therefor; Fastening means therefor composed of a plurality of similar covering or lining elements
- E04F13/0866—Coverings or linings, e.g. for walls or ceilings composed of covering or lining elements; Sub-structures therefor; Fastening means therefor composed of a plurality of similar covering or lining elements composed of several layers, e.g. sandwich panels or layered panels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- E—FIXED CONSTRUCTIONS
- E04—BUILDING
- E04F—FINISHING WORK ON BUILDINGS, e.g. STAIRS, FLOORS
- E04F2290/00—Specially adapted covering, lining or flooring elements not otherwise provided for
- E04F2290/02—Specially adapted covering, lining or flooring elements not otherwise provided for for accommodating service installations or utility lines, e.g. heating conduits, electrical lines, lighting devices or service outlets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Power Engineering (AREA)
- Civil Engineering (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention belongs to the field of photovoltaic building integration, and particularly discloses a photovoltaic ceramic tile containing a barrier layer and a preparation method thereof, wherein the photovoltaic ceramic tile sequentially comprises a ceramic glaze layer (1), the barrier layer (2), a solar cell layer (3) and a substrate (4) from top to bottom; the barrier layer is transparent, and the transmittance in the wave band of 300-700nm is not less than 95%. The barrier layer is an oxide, a nitride or a high molecular organic matter; the weighted average transmittance of the ceramic glaze layer in the wavelength range of 300 nm-1300 nm is more than or equal to 20%. The method for preparing the photovoltaic ceramic tile comprises the following steps: 1) cleaning the surface of the substrate; attaching the solar cell to a substrate, and leading out a positive electrode and a negative electrode; 2) preparing a barrier layer on the solar cell layer; 3) and preparing a ceramic glaze layer on the barrier layer. A barrier layer is prepared between the glaze layer and the battery, and the battery prepared by the method has stable performance and does not attenuate after long-term use.
Description
Technical Field
The invention belongs to the field of building integration, and particularly relates to a barrier layer for a photovoltaic ceramic tile and a preparation method thereof.
Background
At present, in the field of building integration, a solar panel is generally installed on a roof or an outer wall of a building. This approach has several problems: 1. the battery plate is difficult to use for the curved building outer wall and the roof; 2. the installation steps of the battery panel are complex; 3. the installed battery board generally presents dark blue or black, does not have the building to the artistry requirement. Photovoltaic cells are combined with building materials, such as tiles, and such combinations are referred to as "photovoltaic tiles". The ceramic tile belongs to a typical building material, has an internal structure of a solar cell and a power generation function, can solve the problems that the traditional photovoltaic module is difficult to apply to a curved building and is complex to install, and can greatly improve the integration level of the photovoltaic module and the building. However, this still does not meet the aesthetic requirements of building tiles. The photovoltaic cell is coated with the ceramic glaze layer, so that the photovoltaic cell can show a certain color and has good light transmission performance. Both guaranteed the requirement of building to the aesthetic degree to a certain extent, also guaranteed that photovoltaic ceramic tile possesses higher conversion efficiency.
However, this method of preparing a ceramic glaze layer on a solar cell also brings other problems, and the most important one of them is that the efficiency of the prepared cell gradually decreases with time. Analysis shows that the diffusion of elements in the ceramic glaze layer into the cell is the essential cause of cell attenuation.
Disclosure of Invention
The invention aims to provide a photovoltaic ceramic tile containing a barrier layer and a preparation method thereof. A barrier layer is prepared between the solar cell and the glaze layer, which can effectively block the diffusion of each element in the ceramic glaze layer to the interior of the cell, and in addition, the element in the barrier layer does not have adverse effect on the cell performance. The battery prepared by the method has stable performance, and the performance of the battery can not be attenuated after the battery is used for a long time.
The specific technical scheme of the invention is as follows:
the invention provides a photovoltaic ceramic tile containing a barrier layer, which sequentially comprises a ceramic glaze layer 1, the barrier layer 2, a solar cell layer 3 and a substrate 4 from top to bottom;
wherein the barrier layer is transparent, and the transmittance in the wavelength band of 300-700nm is not less than 95%.
Preferably, the barrier layer is an oxide, a nitride or a polymer organic substance.
Preferably, the oxide is one or more of silicon dioxide, zinc oxide and titanium oxide; the nitride is aluminum nitride and/or silicon nitride; the polymer organic matter is one or more of polytetrafluoroethylene, polyolefin, epoxy resin and rubber.
Preferably, the thickness of the barrier layer is 0.4-100 μm, and the barrier layer is transparent.
Preferably, the substrate is a ceramic tile, a cement-based plate, a plastic film, glass or a metal plate, and the thickness of the substrate is 0.01 mm-5 cm.
Preferably, the substrate further includes a white layer having a reflectivity. The white coating is one of an acrylic coating, an epoxy coating, a polyurethane coating, an alkyd coating and an organic titanium polymer coating.
Preferably, in the photovoltaic ceramic tile, the transmittance of the ceramic glaze layer is weighted to be not less than 20% within the wavelength range of 300-1300 nm.
Any of the ceramic glaze layers described are well known in the art.
Preferably, the ceramic glaze layer is made of an inorganic silicate material or an inorganic-organic composite material, the thickness of the ceramic glaze layer is 0.01-5 mm, and the ceramic glaze layer displays a certain color.
Preferably, the solar cell layer comprises a copper indium gallium selenide cell, a copper zinc tin sulfur selenide cell, a cadmium telluride cell, an amorphous silicon cell or a perovskite cell.
Preferably, the photovoltaic ceramic tile does not contain the EVA (ethylene vinyl acetate) serving as the packaging material of the traditional photovoltaic cell.
The invention provides a preparation method of a photovoltaic ceramic tile containing a barrier layer, which comprises the following steps:
1) attaching the solar cell layer to the substrate, and leading out the anode and the cathode, or directly preparing the solar cell layer on the substrate, and leading out the anode and the cathode;
2) preparing a barrier layer on the solar cell layer;
3) and preparing a ceramic glaze layer on the barrier layer.
Preferably, the substrate in the step 1) is subjected to polishing and cleaning treatment before the solar cell layer is prepared, the surface roughness of the treated substrate is less than or equal to 100nm, and the contact angle is less than or equal to 15 degrees.
Preferably, the method for preparing the barrier layer on the solar cell layer in the step 2) includes a sputtering method, an evaporation method, a chemical vapor deposition method or a spin coating method.
Compared with the prior art, the invention has the advantages that:
1) the substrate source is wide, no special requirement exists, and the preparation of the product is not influenced;
2) the building material is combined with the photovoltaic cell, so that the building material has higher integration level compared with the conventional photovoltaic building integrated product;
3) compared with the traditional photovoltaic building integrated product with monotonous color, the photovoltaic ceramic tile disclosed by the invention can present rich colors.
4) A barrier layer is prepared between the photovoltaic cell and the glaze layer, the structure is novel, the cell prepared by the method is stable in performance, and the performance of the cell can not be attenuated after the cell is used for a long time.
Drawings
FIG. 1 is a cross-sectional view of a photovoltaic tile;
FIG. 2a is a graph of the change in photovoltaic tile conversion efficiency over time without a barrier layer being prepared;
fig. 2b is a graph of photovoltaic tile conversion efficiency over time when preparing a barrier layer.
Reference numerals
1 is a ceramic glaze layer, 2 is a barrier layer, 3 is a solar cell layer and 4 is a substrate.
Detailed Description
The invention will be further explained and illustrated with reference to the drawings, which are only intended to illustrate and not to limit the invention.
A photovoltaic ceramic tile containing a barrier layer comprises a ceramic glaze layer 1, the barrier layer 2, a solar cell layer 3 and a substrate 4 from top to bottom in sequence; the ceramic glaze layer displays certain color, the transmittance of the ceramic glaze layer is 50% -95%, and a barrier layer in contact with the ceramic glaze layer is required to be transparent.
The thickness of the barrier layer is 0.4-1000 μm, the barrier layer can be selected from oxides with the forbidden band width larger than 3.0eV, such as silicon dioxide, zinc oxide, titanium oxide and the like, and can also be nitrides and organic matters with larger forbidden band widths, such as aluminum nitride, silicon nitride, polytetrafluoroethylene and the like. The barrier layer can be prepared by sputtering, evaporation, chemical vapor deposition and spin coating.
The solar cell can be a copper indium gallium selenide cell, a copper zinc tin sulfur selenide cell, a cadmium telluride cell, an amorphous silicon cell or a perovskite cell. Wherein the substrate can be also provided with a white layer with reflectivity to improve the output power of the component.
The substrate may be a tile, cement-based board, plastic envelope, glass or metal plate.
The glaze film selected by the invention is preferably an inorganic silicate material or an inorganic organic composite material, and the composition of the glaze film comprises a plurality of elements such as O, Na, Ga, Mg, S, Si, Al, Ca, Co, K, Zr, Ba, P and B, and the glaze material can be formed by reacting raw materials (such as oxides or corresponding salts, such as sodium silicate, magnesium hydroxide and potassium carbonate) containing the elements at a low temperature.
According to the photovoltaic ceramic tile, the weighted average transmittance of the ceramic glaze layer in the wavelength range of 300-1300 nm is more than 20%.
The photovoltaic ceramic tile does not contain EVA (ethylene vinyl acetate) which is an encapsulating material of a traditional photovoltaic cell, and the blocking layer can play a role in blocking elements in the glaze layer from diffusing to the photovoltaic cell and also plays a role in protecting the cell. The photovoltaic ceramic tile prepared by the method is very thin and can adapt to buildings with various curved surface shapes; the surface of the tile is colorful, and the tile can be applied to various buildings with required artistic effects like a common tile, so that the integration level of the photovoltaic cell and the buildings can be greatly improved.
Example 1
A photovoltaic ceramic tile containing a barrier layer is characterized in that a substrate is made of stainless steel, the thickness of the substrate is 2.0mm, a copper indium gallium selenide photovoltaic cell layer is arranged on the substrate, and a lead extraction electrode is arranged on the substrate. Then, a silicon dioxide barrier layer is prepared by a sputtering method, and the thickness of the barrier layer is 0.4 um. A red glaze layer is prepared on the barrier layer, the thickness of the red glaze layer is 0.1mm, the efficiency of the prepared battery is hardly reduced along with the time, and as shown in figure 2b, the prepared battery has almost no aging problem.
The preparation method of the battery layer comprises the following specific steps:
and cleaning the flexible stainless steel foil substrate and putting the cleaned flexible stainless steel foil substrate into a magnetron sputtering machine. In order to prevent the elements in the stainless steel from diffusing into the solar cell, a WTi barrier layer with the thickness of 0.5 mu m is sputtered. Ar gas is used as working gas, the sputtering pressure is 0.7Pa, and the background vacuum is 2.0 multiplied by 10-3Pa, the substrate was not heated during sputtering. The Mo film is prepared by adopting a three-layer process, wherein the sputtering air pressure of the first layer is 1.5Pa, the sputtering air pressure of the second layer is 0.6Pa, and the sputtering air pressure of the third layer is 1.5 Pa. Depositing a CIGS thin film with the thickness of 1.2-2 mu m on the Mo film by a sputtering method, wherein the sputtering pressure is 0.7Pa, and the background vacuum is 1.5 multiplied by 10-3Pa followed by a selenization anneal. And placing the selenized film in a mixed solution of cadmium sulfate, thiourea and ammonia water, and depositing 30-50 nmCDS at 70 ℃. Then, the film is placed in the sputtering chamber again, and the working gas adopts O2+ Ar, sputtering pressure 0.7Pa, background vacuum 2.0X 10-3Pa, keeping the substrate temperature at 150-200 ℃ during sputtering, and respectively depositing an intrinsic ZnO film and an AZO film. And preparing an Ag grid line electrode by adopting screen printing, and then conducting drainage by adopting a tin-plated copper bar. And manufacturing the flexible thin-film solar panel. Finally, a layer of SiO with the thickness of 1 micron is prepared by adopting a sputtering method2The thin film layer serves as a barrier layer.
The silicon dioxide is obtained by reactive sputtering: the vacuum chamber is pumped to 2.0X 10-3And starting to work after Pa. Adopting 600W constant power sputtering, sputtering pressure of 0.6Pa, sputtering atmosphere of Ar + O2Wherein Ar: o is23:1, the film thickness is 0.4 mu m, the target material is monocrystalline silicon with the purity of 6N, and the target base distance is 60 mm.
The ceramic glaze layer is formed by an ink-jet printing mode, selected raw materials of the glaze layer comprise cobalt acetate, ferrous chloride, potassium chromate and zirconium hypochlorite, glaze solution is formed by a conventional mode (dissolved by water or an alcohol solvent, OP and water-based acrylic emulsion are added), and then the glaze solution is put into different printer equipment according to different glaze colors to prepare a red glaze layer with the thickness of 0.1mm, the efficiency of the prepared solar cell is 17.7%, and the change of the efficiency is very small after the solar cell is placed outdoors for 80 days, as shown in figure 2 b.
Control group
Referring to example 1, a photovoltaic tile without a barrier layer, whose substrate was stainless steel and had a thickness of 2.0mm, was provided with a copper indium gallium selenide photovoltaic cell layer thereon, and was provided with a lead extraction electrode. A red glaze layer is directly prepared on the battery layer without arranging a barrier layer, the thickness of the red glaze layer is 0.1mm, the initial efficiency of the prepared battery is 17.7%, the efficiency is gradually reduced after the battery is placed outdoors for a period of time, and the battery efficiency is 15.5% after the battery is placed for 40 days; after 80 days of standing, the cell efficiency was 12.1%.
Example 2
A photovoltaic ceramic tile containing a barrier layer is characterized in that a substrate is toughened glass, the thickness of the substrate is 3.0mm, a cadmium telluride photovoltaic cell layer is arranged on the substrate, and a lead extraction electrode is arranged on the substrate. The cell can be prepared as described in example 1, followed by the preparation of a silicon nitride barrier layer with a thickness of 100um by chemical vapor deposition. The source gas is SiH4、NH3，SiH4、NH3The flow ratio of (A) was 0.54, the plate pitch was 16.60mm, and the deposition temperature was 75 ℃. And a beige glaze layer is prepared on the barrier layer, the thickness of the beige glaze layer is 0.01mm, and the prepared battery has almost no attenuation of efficiency along with the time extension and has no aging problem. The glaze solution can be sprayedAnd the screen printing and the flow paddle are coated on the surface of the battery layer.
Example 3
A photovoltaic ceramic tile containing a barrier layer is characterized in that a substrate is made of polyimide, the thickness of the substrate is 1.2mm, a copper-zinc-tin-sulfur-selenium photovoltaic cell layer is arranged on the substrate, and a lead extraction electrode is arranged on the substrate. The cell can be prepared as in example 1, and then a polytetrafluoroethylene barrier layer is prepared by an ion beam sputtering method, wherein the thickness of the barrier layer is 5 um. The target material is polytetrafluoroethylene target with the background pressure of 1.33 multiplied by 10-3Pa, sputtering energy of 1.5keV, sputtering ion flow of 30-40 mA, sputtering pressure of 0.2Pa and deposition temperature of room temperature. And a light green glaze layer is prepared on the barrier layer, the thickness of the glaze layer is 5mm, and the prepared battery has almost no attenuation of efficiency along with the time extension and has no aging problem.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and are not limited. Although the present invention has been described in detail with reference to the embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (12)
1. The photovoltaic ceramic tile with the barrier layer is characterized by comprising a ceramic glaze layer (1), the barrier layer (2), a solar cell layer (3) and a substrate (4) from top to bottom in sequence;
wherein the barrier layer is transparent, and the transmittance in the wavelength band of 300-700nm is not less than 95%.
2. The photovoltaic tile of claim 1, wherein the barrier layer is an oxide, a nitride, or a polymer organic.
3. The photovoltaic tile according to claim 2, wherein the oxide is one or more of silica, zinc oxide and titanium oxide; the nitride is aluminum nitride and/or silicon nitride; the polymer organic matter is one or more of polytetrafluoroethylene, polyolefin, epoxy resin and rubber.
4. The photovoltaic tile according to claim 1, wherein the barrier layer has a thickness of 0.4 to 1000 μm.
5. The photovoltaic tile according to any one of claims 1-4, wherein said substrate is a tile, a cement-based board, a plastic film, a glass or a metal plate, and said substrate has a thickness of 0.01mm to 5 cm.
6. The photovoltaic tile according to any one of claims 1-4 wherein said substrate further comprises a white layer having a reflectivity.
7. The photovoltaic tile according to any one of claims 1-4, wherein the ceramic glaze layer has a weighted average transmittance of 20% or more over a wavelength range of 300nm to 1300 nm.
8. The photovoltaic ceramic tile according to any one of claims 1 to 4, wherein the ceramic glaze layer is made of an inorganic silicate material or an inorganic-organic composite material, and the thickness of the ceramic glaze layer is 0.01 to 5 mm.
9. The photovoltaic tile according to any one of claims 1-4, wherein the solar cell layer comprises a copper indium gallium selenide cell, a copper zinc tin sulfur selenide cell, a cadmium telluride cell, an amorphous silicon cell, or a perovskite cell.
10. A method of making the photovoltaic tile containing the barrier layer of any one of claims 1-9, comprising the steps of:
1) attaching the solar cell layer to the substrate, and leading out the anode and the cathode, or directly preparing the solar cell layer on the substrate, and leading out the anode and the cathode;
2) preparing a barrier layer on the solar cell layer;
3) and preparing a ceramic glaze layer on the barrier layer.
11. The method according to claim 10, wherein the substrate of step 1) is polished and cleaned before the solar cell layer is prepared, the surface roughness of the substrate after the polishing and cleaning is greater than or equal to 100nm, and the contact angle is less than or equal to 15 °.
12. The method for preparing a solar cell according to claim 10, wherein the method for preparing a barrier layer on the solar cell layer in step 2) comprises a sputtering method, an evaporation method, a chemical vapor deposition method, an ultrasonic spraying method or a spin coating method.
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| CN103367507A (en) * | 2013-03-22 | 2013-10-23 | 韩华新能源（启东）有限公司 | Photovoltaic module |
| CN203277447U (en) * | 2013-05-08 | 2013-11-06 | 江苏爱多光伏科技有限公司 | Photovoltaic tile |
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| CN101755343A (en) * | 2007-03-30 | 2010-06-23 | 大学联合体管理中心陶瓷工业研究与实验陶瓷中心 | The surface has the ceramic tile of photovoltaic cell function |
| CN201738511U (en) * | 2010-04-07 | 2011-02-09 | 江苏华创光电科技有限公司 | Solar ceramic tile capable of generating power |
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