CN110690156A - 静电卡盘单元 - Google Patents
静电卡盘单元 Download PDFInfo
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- 239000007769 metal material Substances 0.000 description 2
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
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- 229910052738 indium Inorganic materials 0.000 description 1
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Abstract
提供了静电卡盘单元。静电卡盘单元包括配置成产生相对弱的静电力的第一布线部分和配置成产生相对强的静电力的第二布线部分。
Description
相关申请的交叉引用
本申请要求于2018年7月4日在韩国知识产权局提交的第10-2018-0077892号韩国专利申请的优先权和权益,该韩国专利申请的公开内容通过引用以其整体并入本文。
技术领域
一个或多个实施方式涉及用于产生沉积源的蒸汽和用于通过掩模在基板上形成薄膜的薄膜沉积装置,并且还涉及包括改进的静电卡盘单元的薄膜沉积装置,其中,所述静电卡盘单元用于使掩模和基板彼此紧密接触以及用于支撑掩模和基板。
背景技术
通常,有机发光显示设备通过根据分别注入到阳极和阴极中的空穴和电子在发射层中的重新组合而发射光来产生图像。有机发光显示设备具有这样的堆叠结构,在所述堆叠结构中,发射层***阳极与阴极之间。然而,由于利用上述结构难以获得高效的光发射,因此选择性地向发射层添加电子注入层、电子传输层、空穴传输层和空穴注入层作为两个电极之间(即,阳极与阴极之间)的中间层。
有机发光显示设备的电极和中间层可通过多种方法形成。沉积方法是所述多种方法中的一种。当通过使用沉积方法制造有机发光显示设备时,具有与要形成的薄膜图案对应的图案孔的掩模在基板上对准,并且薄膜的原材料通过掩模的图案孔沉积在基板上,从而形成具有所需图案的薄膜。
在这种情况下,静电卡盘单元用于使掩模与基板彼此紧密接触,并且牢固地支撑掩模和基板。换言之,静电卡盘单元定位成与掩模相对且以基板位于其间,并且利用静电力拉动基板和掩模,使得在执行沉积时掩模与基板彼此牢固地粘附。
发明内容
由于掩模的周边中的台阶差,单元格的端部部分处发生排斥力而非吸引力,其中单元格是掩模中形成图案孔的区域。因此,基板与掩模之间的粘附性相对降低。在这种情况下,基板与掩模之间形成间隙,并且可能无法在所需位置处精确地执行沉积。因此,以这种方式制造的产品可能有缺陷的可能性高。
一个或多个实施方式包括静电卡盘单元以及包括具有静电卡盘单元的薄膜沉积装置,其中,静电卡盘单元改善单元格的端部部分处的粘附性。
另外的方面将部分地在以下描述中阐述,并且将部分地通过描述而显而易见,或者可通过对所呈现的实施方式的实践而习得。
根据一个或多个实施方式,静电卡盘单元包括静电卡盘主体,静电卡盘主体包括第一布线部分和第二布线部分,第一布线部分和第二布线部分各自包括配置成产生静电力以通过静电力在基板与掩模之间产生吸引力的多条布线,其中,第一布线部分配置成产生比第二布线部分更弱的静电力。
第二布线部分中的布线之间的间隔可小于第一布线部分中的布线之间的间隔。
第二布线部分中的布线中的每条的宽度可大于第一布线部分中的布线中的每条的宽度。
第二布线部分中的布线中的每条的厚度可大于第一布线部分中的布线中的每条的厚度。
静电卡盘单元还可包括位于静电卡盘主体的与基板和掩模面对的表面上的多个按压凸起。
多个按压凸起可位于与第二布线部分对应的位置处。
多个按压凸起可位于与第一布线部分对应的位置处及位于与第二布线部分对应的位置处,并且按压凸起中位于与第二布线部分对应的位置处的按压凸起可比按压凸起中位于与第一布线部分对应的位置处的按压凸起更密集地分布。
静电卡盘主体还可包括冷却器。
静电卡盘单元还可包括磁体,磁体用于产生磁力以吸引掩模。
掩模可包括单元格,单元格中分布有多个图案孔并且在单元格的端部部分中形成有台阶差部分,其中,第二布线部分定位成与台阶差部分对应。
根据一个或多个实施方式,薄膜沉积装置包括腔室、沉积源供应器、掩模和静电卡盘单元,其中,沉积源供应器配置成在腔室中向作为沉积目标的基板供应沉积源;掩模具有单元格,单元格具有形成在其中的多个图案孔,多个图案孔用于对基板进行图案化沉积;静电卡盘单元配置成支撑掩模和基板以在掩模与基板之间产生吸引力并且包括静电卡盘主体,静电卡盘主体配置成产生静电力以通过静电力在基板与掩模之间产生吸引力,并且静电卡盘主体包括各自包括多条布线以产生静电力的第一布线部分和第二布线部分,其中,第一布线部分配置成产生比第二布线部分更弱的静电力。
第二布线部分中的布线之间的间隔可小于第一布线部分中的布线之间的间隔。
第二布线部分中的布线中的每条的宽度可大于第一布线部分中的布线中的每条的宽度。
第二布线部分中的布线中的每条的厚度可大于第一布线部分中的布线中的每条的厚度。
薄膜沉积装置还可包括位于静电卡盘主体的与基板和掩模面对的表面上的多个按压凸起。
多个按压凸起可位于与第二布线部分对应的位置处。
多个按压凸起可位于与第一布线部分对应的位置处及位于与第二布线部分对应的位置处,其中,按压凸起中位于与第二布线部分对应的位置处的按压凸起比按压凸起中位于与第一布线部分对应的位置处的按压凸起更密集地分布。
静电卡盘主体还可包括冷却器。
薄膜沉积装置还可包括磁体,磁体用于利用磁力吸引掩模。
台阶差部分可形成在单元格的端部部分中,其中,第二布线部分定位成与掩模中的台阶差部分对应。
除了上述描述中的方面和特征之外的方面和特征可通过参考以下对实施方式的详细描述、所附附图和权利要求而更容易地理解。
附图说明
从结合附图对实施方式进行的以下描述,这些和/或其他方面将变得显而易见且更容易理解,在附图中:
图1是根据实施方式的包括静电卡盘单元的薄膜沉积装置的剖视图;
图2是图1中所示的掩模框架组件的立体图;
图3是沿图2的线III-III截取的剖视图;
图4是图1中所示的静电卡盘单元的平面图;
图5是根据另一实施方式的静电卡盘单元的平面图;
图6至图10是根据另外的实施方式的静电卡盘单元的剖视图;以及
图11是作为图1中所示的基板的示例的有机发光显示设备的结构的剖视图。
具体实施方式
由于本公开允许各种改变和诸多实施方式,因此将在附图中示出并且在书面描述中详细描述特定实施方式。可通过参考附图和以下对优选实施方式的详细描述来更容易地理解本公开的特征和效果及实现本公开的方法。然而,本发明可以以许多不同的形式实施,并且不应理解为限于本文中所阐述的实施方式。
现在将详细地对实施方式进行参考,实施方式的示例在附图中示出,其中,相同或相应的部件被赋予相同的附图标记而无论图号如何,并且省略冗余说明。
在说明书通篇,如“第一”、“第二”等术语可不出于限制的目的使用,而是可用于将一个部件与另一部件区分开。
在说明书通篇,单数形式可包括复数形式,除非存在与其相反的特定描述。
在说明书通篇,还将理解的是,当在本说明书中使用时,术语“包括(comprise)”、“包括(include)”和/或“具有”指定所述特征和/或部件的存在,但不排除一个或多个其他特征和/或部件的存在或添加。
在附图中,为了清晰,夸大了层和区域的厚度。例如,为了便于描述,附图中的元件的厚度和尺寸是任意示出的,并且本公开的精神和范围不一定由附图限定。
此外,还应注意的是,在一些可替代的实现方式中,本文中描述的所有方法的步骤可以不按顺序发生。例如,连续示出的两个步骤实际上可以基本上同时执行,或者所述两个步骤有时可以以相反的顺序执行。
在说明书通篇,还将理解的是,当层、区域、元件等被称为连接至另一层、区域或元件或者与另一层、区域或元件联接时,其可直接连接至所述另一层、区域或元件或者与所述另一层、区域或元件直接联接,或者其可通过在所述层、区域、元件与所述另一层、区域或元件之间***中间层、区域或元件而间接地连接至所述另一层、区域或元件或者与所述另一层、区域或元件间接联接。例如,在说明书通篇,当层、区域、元件等被称为电连接至另一层、区域或元件或者与另一层、区域或元件电联接时,其可以以直接的方式电连接至所述另一层、区域或元件或者以直接的方式与所述另一层、区域或元件电联接,或者其可通过在所述层、区域、元件与所述另一层、区域或元件之间***中间层、区域或元件以间接的方式电连接至所述另一层、区域或元件或者以间接的方式与所述另一层、区域或元件电联接。
图1是根据实施方式的包括静电卡盘单元100的薄膜沉积装置的剖视图。图2是图1中所示的掩模框架组件200的立体图。图3是沿图2的线III-III截取的剖视图。图4是图1中所示的静电卡盘单元100的平面图。
如图1中所示,根据本实施方式的薄膜沉积装置包括沉积源单元/沉积源供应器300、掩模210和静电卡盘单元100,其中,沉积源单元/沉积源供应器300用于在腔室400中喷射沉积源,掩模210与作为沉积目标的基板10的表面紧密接触,静电卡盘单元100定位在基板10的、与所述表面相对的表面上并且通过静电力吸引基板10和掩模210以使基板10和掩模210彼此紧密接触。
因此,当沉积源供应器300在腔室400中喷射沉积源时,沉积源通过形成在掩模210中的图案孔211a(参见图2)沉积在基板10上,并且因此,形成具有图案的薄膜。
在这种情况下,电力从静电卡盘单元100的电源120供应到静电卡盘主体110的第一布线部分111和第二布线部分112(参见图4中的第一布线部分111和第二布线部分112)以产生静电力,并且掩模210和基板10通过静电力彼此牢固地紧密接触。
掩模210以其中掩模210的边缘部分由框架220支撑的掩模框架组件200的形式使用,并且具有如图2中所示的结构。
如图2中所示,提供了在其中央处具有开口221的框架220,并且多个条状掩模(例如,相对长且薄的掩模)210在框架220上被支撑(例如,通过框架220的端部)。掩模210中的每个具有固定至框架220的两个端部,并且掩模210中的每个的位于两个端部之间的多个单元格211布置在开口221中(例如,与开口221对准或者与开口221对应)。单元格211中的每个是形成有多个图案孔211a的区域,并且当沉积源穿过单元格211的多个图案孔211a时,基板10上形成薄膜。通常,掩模210包括金属材料。
单元格211的在每个掩模210的相应端部附近的端部部分A1和A2中形成有台阶差部分210a,其中所述台阶差部分210a的厚度相对突然地变化。换言之,如图3中所示,其厚度突然地变化的台阶差部分210a(例如,位于掩模210的厚度突然地增加的位置处)形成在端部部分A1和A2中。在形成有台阶差部分210a的区域中,当静电力发生时出现排斥力,并且因此,掩模210和基板10之间的粘附性低于其他区域中的粘附性。
因此,在本实施方式中,以差别的方式在静电卡盘主体110中布置第一布线部分111和第二布线部分112(例如,参见图4)以抑制上述的排斥力的问题。稍后将描述其详细结构。首先,将参照图11简要地描述有机发光显示设备的结构,作为根据本实施方式的通过薄膜沉积装置在其上执行沉积的基板10的示例。
图11是作为图1中所示的基板10的示例的有机发光显示设备的结构的剖视图。
如图11中所示,有机发光显示设备包括薄膜晶体管TFT和有机发光器件EL。
有源层14形成在位于基板10上的缓冲层10a上。有源层14包括大量掺杂有N-型或P-型杂质的源极和漏极。有源层14可包括氧化物半导体。例如,氧化物半导体可包括选自12族、13族和14族金属元素及其组合的材料的氧化物,其中所述12族、13族和14族金属元素诸如为锌(Zn)、铟(In)、镓(Ga)、锡(Sn)、镉(Cd)和锗(Ge)。例如,包括氧化物半导体的有源层14可包括G-I-Z-O[(In2O3)a(Ga2O3)b(ZnO)c](其中a、b和c是分别满足条件a≥0、b≥0和c>0的实数)。栅电极15形成在有源层14上,且栅极绝缘层10b位于栅电极15与有源层14之间。栅电极15包括两个层,即,栅电极15包括栅极下层15a和栅极上层15b。
栅电极15上形成有源电极16和漏电极17。栅电极15与源电极16之间以及栅电极15与漏电极17之间设置有层间绝缘层10c,并且有机发光器件EL的像素电极11与源电极16和漏电极17之间定位有钝化层10d。
像素电极11上方形成有像素限定层10e。像素限定层10e中形成有开口以暴露像素电极11,并且然后通过沉积在像素电极11上形成发射层12。
有机发光器件EL根据电流发射红色光、绿色光和蓝色光,从而显示图像信息。有机发光器件EL包括连接至薄膜晶体管TFT的漏电极17的像素电极11、与像素电极11面对的对电极13和定位在像素电极11与对电极13之间的用于发光的发射层12。
例如,空穴注入层(HIL)、空穴传输层(HTL)、电子传输层(ETL)和电子注入层(EIL)可堆叠成与发射层12相邻。
可通过经由薄膜沉积装置进行沉积在基板10上形成各种薄膜。
在这种情况下,当存在由于掩模210的台阶差而导致基板10的粘附性降低的部分时,可能发生沉积失败。因此,为了补偿该部分中降低的粘附性,如图4中所示,根据本实施方式的静电卡盘单元100具有第一布线部分111和第二布线部分112的差别布置结构。
换言之,布线之间具有相对大间隔的第一布线部分111形成在与掩模210的没有台阶差部分的中央部分对应的位置处,并且布线之间具有相对小间隔的第二布线部分112形成在与相应单元格211的具有相应台阶差部分210a的端部部分A1和A2对应的位置处。第二布线部分112中相对小的布线间隔意指当与第一布线部分111相比时,单位面积中布置有更多的布线。因此,具有相对小布线间隔的第二布线部分112中可产生比具有相对大布线间隔的第一布线部分111中更大的静电力。
总之,具有小布线间隔的第二布线部分112设置在与单元格211的端部部分A1和A2对应的位置处(否则其可能由于台阶差部分210a而具有相对低的粘附性),且具有大布线间隔的第一布线部分111设置在除了与端部部分A1和A2对应的位置之外的位置处,并且因此,通过静电力的差别作用而补偿由于掩模210的结构引起的粘附性的差异。
在这种情况下,可有效地防止由于粘附性的降低而导致的沉积失败,从而改善产品的性能和可靠性。第二布线部分112形成在比形成有台阶差部分210a的端部部分A1和A2的区域更大的区域之上,以增加产品的使用范围。因此,即使在当单元格211的尺寸改变并且端部部分A1和A2的位置稍微地改变时的情况下,也可有效地防止沉积失败。除上述结构之外,还可以不同地控制从电源120供应到第一布线部分111和第二布线部分112的电力的量,使得可更精确地调节静电力的差异。
因此,当使用具有上述结构的静电卡盘单元100执行薄膜沉积时,可以在基板10和掩模210彼此牢固地紧密接触的状态下,即在基板10和掩模210彼此牢固地粘附的状态下,执行稳定的沉积。
对变型进行描述,在所述变型中部件可以在上述实施方式的精神和范围内进行修改并另外实现。
图5是根据另一实施方式的静电卡盘单元的平面图。
参照图5,如图4的静电卡盘单元100中那样,静电卡盘主体110中设置有用于产生相对弱的静电力的第一布线部分111和用于产生相对强的静电力的第二布线部分112a。在图4的静电卡盘单元100中,当与第一布线部分111的布线相比时,第二布线部分112的布线之间的间隔减小,以增加静电力。相比之下,在图5的静电卡盘单元中,第二布线部分112a中的布线中的每条的宽度W大于第一布线部分111中的布线中的每条的宽度以增加静电力。
相应地,在图5的静电卡盘单元中,具有宽的布线的第二布线部分112a设置在与单元格211(参见图2)的端部部分A1和A2对应的位置处(否则其可能由于台阶差部分210a而具有相对低的粘附性),从而通过静电力的差别作用补偿由于掩模210(参见图2)的结构导致的粘附性差异。
图6至图10是根据另外的实施方式的静电卡盘单元的剖视图。
图6示出其中第二布线部分112b中的布线中的每条的厚度T大于第一布线部分111中的布线中的每条的厚度以增加静电力的示例。
相应地,具有厚布线的第二布线部分112b设置在与单元格211(参见图2)的端部部分A1和A2对应的位置处,从而通过静电力的差别作用补偿由于掩模210(参见图2)的结构导致的粘附性的差异。
图7示出其中除了参照图4至图6描述的差别布线结构之外在静电卡盘主体110的与基板10面对的表面上进一步形成按压凸起113的示例。按压凸起113通过向基板10施加物理压力来增加粘附力。本实施方式示出按压凸起113仅位于具有第二布线部分112、112a和112b的端部部分A1和A2中的结构。
图8示出如图7中所示的按压凸起113形成在静电卡盘主体110的整个表面上的结构。按压凸起113稀疏地布置在(例如,相对间隔开)具有第一布线部分111的中央部分中,并且更紧密地布置在具有第二布线部分112的端部部分A1和A2中,并且因此,通过按压凸起113的差别布置也补偿了粘附性的降低。
图9示出其中静电卡盘主体110在具有上述静电力差别结构的同时设置有冷却器130的示例。由于在其中执行沉积的腔室400(参见图1)处于高温环境,如果安装制冷剂管131和制冷剂泵132以使制冷剂循环,则可以防止由于高温导致的变形的风险。
图10示出具有上述静电力差别结构并且还包括磁体单元140的结构。即,包括轭板142和磁体141的磁体单元140被添加到静电卡盘主体110的第一布线部分111上,以使基板10和掩模210不仅通过静电力还通过磁力彼此紧密接触。特别地,当基板10较大时,在安装了基板10和掩模210之后进行沉积时,基板10和掩模210的中央可能由于其重量而下垂;且在这种情况下,包括金属材料的掩模210被磁体141的磁力吸引从而防止下垂。
因此,这样的各种修改是可能的。
如上所述,根据基于所描述的实施方式的静电卡盘单元和薄膜沉积装置,可以在单元格的端部部分中增强静电力(否则在基板与掩模之间具有差的粘附性),并且因此,可以有效地防止由于粘附性降低导致的沉积失败,并且因此可以改善产品的性能和可靠性(例如,可以使沉积源遍布基板更一致地进行沉积)。
应理解的是,本文中描述的实施方式应仅以描述性意义理解而不是出于限制的目的。对每个实施方式中的特征或方面的描述通常应理解为可用于其他实施方式中的其他类似特征或方面。
虽然已经参考附图描述了一个或多个实施方式,但是本领域普通技术人员将理解的是,在不脱离如由所附权利要求及所包括的其功能等同限定的精神和范围的情况下,可以对这些实施方式在形式和细节上进行各种改变。
Claims (10)
1.静电卡盘单元,包括∶
静电卡盘主体,包括第一布线部分和第二布线部分,所述第一布线部分和所述第二布线部分各自包括多条布线,所述多条布线配置成产生静电力以通过所述静电力在基板与掩模之间产生吸引力,
其中,所述第一布线部分配置成产生比所述第二布线部分更弱的静电力。
2.根据权利要求1所述的静电卡盘单元,其中,所述第二布线部分中的布线之间的间隔小于所述第一布线部分中的布线之间的间隔。
3.根据权利要求1所述的静电卡盘单元,其中,所述第二布线部分中的布线中的每条的宽度大于所述第一布线部分中的布线中的每条的宽度。
4.根据权利要求1所述的静电卡盘单元,其中,所述第二布线部分中的布线中的每条的厚度大于所述第一布线部分中的布线中的每条的厚度。
5.根据权利要求1所述的静电卡盘单元,还包括:多个按压凸起,位于所述静电卡盘主体的、与所述基板和所述掩模面对的表面上。
6.根据权利要求5所述的静电卡盘单元,其中,所述多个按压凸起位于与所述第二布线部分对应的位置处。
7.根据权利要求5所述的静电卡盘单元,
其中,所述多个按压凸起位于与所述第一布线部分对应的位置处和与所述第二布线部分对应的位置处,以及
其中,所述按压凸起中位于与所述第二布线部分对应的所述位置处的按压凸起比所述按压凸起中位于与所述第一布线部分对应的所述位置处的按压凸起更密集地分布。
8.根据权利要求1所述的静电卡盘单元,其中,所述静电卡盘主体还包括冷却器。
9.根据权利要求1所述的静电卡盘单元,还包括:磁体,所述磁体用于产生磁力以吸引所述掩模。
10.根据权利要求1所述的静电卡盘单元,
其中,所述掩模包括单元格,所述单元格中分布有多个图案孔,并且在所述单元格的端部部分中形成有台阶差部分,
其中,所述第二布线部分定位成与所述台阶差部分对应。
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KR (1) | KR102584518B1 (zh) |
CN (1) | CN110690156A (zh) |
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KR20220034993A (ko) * | 2020-09-11 | 2022-03-21 | 삼성디스플레이 주식회사 | 증착 장치 및 증착 장치의 마스크 착좌 방법 |
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CN102473669B (zh) * | 2009-06-30 | 2015-07-15 | Asml控股股份有限公司 | 图像补偿可寻址的静电卡盘*** |
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- 2019-05-30 CN CN201910461585.XA patent/CN110690156A/zh active Pending
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US5751538A (en) * | 1996-09-26 | 1998-05-12 | Nikon Corporation | Mask holding device and method for holding mask |
KR20070091437A (ko) * | 2006-03-06 | 2007-09-11 | 주식회사 에이디피엔지니어링 | 바이폴라 전극 패턴이 형성된 정전 척 |
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US20140104743A1 (en) * | 2012-10-16 | 2014-04-17 | Samsung Display Co., Ltd. | Electrostatic chuck |
CN105579612A (zh) * | 2013-09-20 | 2016-05-11 | 应用材料公司 | 具有一体式静电夹盘的基板载体 |
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KR20200004940A (ko) | 2020-01-15 |
US20200013658A1 (en) | 2020-01-09 |
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