CN110687675A - Galvanometer system, micro-projection device and electronic device - Google Patents

Galvanometer system, micro-projection device and electronic device Download PDF

Info

Publication number
CN110687675A
CN110687675A CN201910864673.4A CN201910864673A CN110687675A CN 110687675 A CN110687675 A CN 110687675A CN 201910864673 A CN201910864673 A CN 201910864673A CN 110687675 A CN110687675 A CN 110687675A
Authority
CN
China
Prior art keywords
galvanometer
micro
wheatstone bridge
temperature
laser light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201910864673.4A
Other languages
Chinese (zh)
Other versions
CN110687675B (en
Inventor
王亮舒
陈思颖
施铭镛
许志尤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Goertek Inc
Original Assignee
Goertek Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Goertek Inc filed Critical Goertek Inc
Priority to CN201910864673.4A priority Critical patent/CN110687675B/en
Publication of CN110687675A publication Critical patent/CN110687675A/en
Application granted granted Critical
Publication of CN110687675B publication Critical patent/CN110687675B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/10—Scanning systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/20—Lamp housings
    • G03B21/206—Control of light source other than position or intensity
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N9/00—Details of colour television systems
    • H04N9/12—Picture reproducers
    • H04N9/31—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM]
    • H04N9/3141—Constructional details thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N9/00—Details of colour television systems
    • H04N9/12—Picture reproducers
    • H04N9/31—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM]
    • H04N9/3141—Constructional details thereof
    • H04N9/315—Modulator illumination systems
    • H04N9/3161—Modulator illumination systems using laser light sources

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Mechanical Optical Scanning Systems (AREA)
  • Micromachines (AREA)

Abstract

A galvanometer system, a micro-projection device, and an electronic device are disclosed. The galvanometer system includes: MEMS micro-vibrating mirror; a Wheatstone bridge disposed at a distal end of a rotation axis of the MEMS micro-galvanometer, wherein the Wheatstone bridge detects a rotational position of the MEMS micro-galvanometer; and a temperature detection section for detecting temperature-related information of the Wheatstone bridge.

Description

Galvanometer system, micro-projection device and electronic device
Technical Field
The present invention relates to the field of micro-galvanometer technology, and more particularly, to a galvanometer system, micro-projection equipment and electronic equipment.
Background
The MEMS galvanometer is a micro mirror surface that can reflect various lights, etc. by rotating rapidly around an axis.
The galvanometer scanning is realized by driving a reflecting mirror to rotate through a mechanical device and utilizing the rotation of the reflecting mirror with X, Y two rotating shafts to realize the scanning of a laser beam on a working view field.
Piezoresistive material may be provided at the end of the shaft. By using the characteristic that the resistance change is caused by the deformation of the piezoresistive material, the rotating position of the galvanometer is detected by detecting the change of the resistance of the piezoresistive material, so that the laser beam can be controlled to scan.
However, during laser scanning projection, the temperature of the scanning galvanometer may be increased by the laser beam generated by the laser scanning system. In addition, during the driving process of the scanning galvanometer, the temperature of the scanning galvanometer is increased due to the physical movement of the galvanometer. The resistance value of the piezoresistive material changes under the influence of temperature, so that the detected resistance value of the piezoresistive material has errors, and the measured rotation position of the galvanometer has errors. Such an error may cause a delay in the timing of driving the laser scanning. The image generated in this way is separated left and right, thereby affecting the imaging effect.
Therefore, a new solution for a galvanometer system is needed to solve at least one technical problem in the prior art.
Disclosure of Invention
It is an object of the present invention to provide a new solution for a galvanometer system.
According to a first aspect of the present invention, there is provided a galvanometer system comprising: MEMS micro-vibrating mirror; a Wheatstone bridge disposed at a distal end of a rotation axis of the MEMS micro-galvanometer, wherein the Wheatstone bridge detects a rotational position of the MEMS micro-galvanometer; and a temperature detection section for detecting temperature-related information of the Wheatstone bridge.
Alternatively or preferably, the wheatstone bridge is made of piezoresistive material.
Alternatively or preferably, the temperature detecting member is a detecting resistor which detects a current or a voltage of the wheatstone bridge, and a change of the current or the voltage indicates a temperature change of the wheatstone bridge. The detection resistor is disposed at a position not affected by the temperature of the micro-vibrating mirror.
Optionally or preferably, the galvanometer system further comprises: and the analog-to-digital converter is used for converting the current or the voltage into a digital signal.
Alternatively or preferably, the detection resistor is connected between the wheatstone bridge and its bias supply and is located outside the chip of the MEMS micro-galvanometer.
Alternatively or preferably, the temperature detection means is a non-contact temperature sensor.
According to a second aspect of the present invention, there is provided a micro-projection device comprising: a laser light source; according to a first aspect of the present invention there is provided a galvanometer system, the MEMS micro-oscillator of which reflects light from a laser source to form an image; and a control unit that corrects the laser light emitted by the laser light source based on the information on the temperature of the Wheatstone bridge detected by the temperature detection unit.
Alternatively or preferably, the control unit adjusts a timing at which the laser light source emits the laser light to the MEMS micro-galvanometer based on information on the temperature of the wheatstone bridge, so as to correct the left-right separation of the image screen.
Optionally or preferably, the laser light source comprises a drive control system, and the control part adjusts the time of emitting laser light through the drive control system.
According to a third aspect of the invention, there is provided an electronic device comprising a micro-projection device as provided according to any of the second aspects of the invention.
According to the embodiment of the present invention, a wheatstone bridge is provided at the end of the rotation shaft of the MEMS micro-galvanometer to detect the rotation position of the galvanometer, and information related to the temperature of the wheatstone bridge is detected by a temperature detecting member. The information related to the temperature of the wheatstone bridge is used for driving adjustment related to the galvanometer so as to improve the performance of the system.
Other features of the present invention and advantages thereof will become apparent from the following detailed description of exemplary embodiments thereof, which proceeds with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description, serve to explain the principles of the invention.
Fig. 1 shows a schematic block diagram of a galvanometer system provided by a first embodiment.
Figure 2 shows a schematic diagram of a galvanometer system.
Fig. 3 shows a schematic block diagram of a galvanometer system provided by a second embodiment.
FIG. 4 shows a schematic block diagram of a micro-projection device, according to one embodiment.
Fig. 5 shows a schematic view of a micro-projection device.
Fig. 6 shows a case where left and right separated images are generated.
Fig. 7 shows a schematic block diagram of an electronic device according to another embodiment.
Detailed Description
Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that: the relative arrangement of the components and steps, the numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.
The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses.
Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate.
In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
< first embodiment >
Fig. 1 shows a galvanometer system provided by a first embodiment. The galvanometer system includes a MEMS micro-galvanometer 100, a Wheatstone bridge 200, and a temperature sensing component 300.
The galvanometer system may be used not only for projectors, but also for other applications, such as laser scanning, engraving, etc.
The Micro-Electro-Mechanical System (MEMS) Micro galvanometer 100 may be a dual axis galvanometer or a single axis galvanometer. Under the condition of a double-shaft vibrating mirror, the X-axis and Y-axis reflecting mirrors can be driven to deflect through a rotating shaft of a servo motor. Based on different deflection angles of the X-axis and Y-axis mirrors (namely, the rotation positions of the mirrors according to X, Y two rotating shafts), the laser light source is driven to emit laser to the MEMS micro-vibrating mirror 100, and the scanning of the laser light source on the working field of view can be realized.
The MEMS micro-galvanometer 100 may vibrate rapidly in the X-direction (often referred to as the fast axis) and slowly in the Y-direction (often referred to as the slow axis). For example, the rapid vibration of the X-axis of the MEMS micro-galvanometer 100 can enable scanning of the image to be projected in a horizontal direction. In general, in the scanning process, for two adjacent scanning lines, scanning is performed from the left side to the right side (left scanning line), and then scanning is performed from the right side to the left side (right scanning line). The starting and ending points of the left scan line are aligned with the ending and starting points of the right scan line, respectively, to form a complete image. .
A wheatstone bridge 200 is provided at the end of the rotation axis of the MEMS micro-galvanometer 100. The rotation axis may be one of the rotation axes of the MEMS micro-galvanometer 100, such as the X-axis or the Y-axis, or all of the rotation axes, such as the X-axis and the Y-axis. The wheatstone bridge 200 is used to detect the rotational position of the MEMS micro-galvanometer 100.
For example, the wheatstone bridge 200 may include a first resistor R11, a second resistor R12, a third resistor R13, and a fourth resistor R14. When the MEMS micro-oscillating mirror 100 oscillates, the four resistors of the wheatstone bridge 200 have different resistances. Therefore, the wheatstone bridge 200 can measure the change of the rotational position of the MEMS micro-mirror 100 by detecting the change of the resistance value. Since the wheatstone bridge is not itself the focus of the present invention, it will not be described in detail here.
For example, a wheatstone bridge 200 is provided at the X-axis end of the MEMS micro-mirror 100 to measure a change in the rotational position of the MEMS micro-mirror 100 by detecting a change in the resistance value.
Figure 2 shows a schematic view of a galvanometer system. As shown in fig. 2, the galvanometer surface 12 of the MEMS micro-galvanometer 100 may be rotated about the X-axis and the Y-axis, respectively. A wheatstone bridge 200 is provided at the end of the X-axis. The wheatstone bridge 200 can detect the rotational position of the galvanometer surface 12. In fig. 2, a wheatstone bridge is provided only at the end of the X-axis. A wheatstone bridge may also be provided at the end of the Y-axis.
In one example, the wheatstone bridge 200 is comprised of a piezoresistive material. When a piezoresistive material is subjected to a stress, the resistivity of the piezoresistive material changes. For example, the piezoresistive material may be a single crystal silicon material. The resistivity of the single crystal silicon material changes when subjected to a force.
The temperature detecting unit 300 detects temperature-related information of the wheatstone bridge 200. It will be appreciated by those skilled in the art that although in FIG. 1 the Wheatstone bridge 200 and the temperature sensing member 300 are shown as separate modules for clarity, in an actual circuit, they may be combined.
As the temperature changes, the resistance of the resistors in the wheatstone bridge 200 changes, and the detected rotational position may be subject to error. Here, a temperature detection part is provided in the galvanometer system to detect a temperature state of the wheatstone bridge. In this way, the subsequent processing system can more accurately determine the rotation state of the galvanometer, thereby providing more accurate control for subsequent processing. For example, the rotational position information detected by the wheatstone bridge can be corrected using the temperature-related information, thereby adjusting the drive control of the galvanometer. In addition, the corrected rotation position information can be used for controlling the matching relation between other components and the galvanometer system. Such a galvanometer system may be manufactured separately and form a separate module. The manufacturer of the assembly may use the module in various galvanometer applications.
The temperature detection member 300 may be disposed outside the MEMS micro-mirror 100, and the temperature detection member 300 may be prevented from being affected by temperature.
The temperature sensing part 300 may be in various forms. In one specific example, the temperature sensing component 300 is a non-contact temperature sensor. The non-contact temperature sensor has its sensitive element not contacting the measured object, and may be used in measuring the surface temperature of moving object, small target, object with small heat capacity and fast temperature change, and measuring the temperature distribution in temperature field. For example, the temperature detection part 300 may be a temperature sensor of invisible light. In a scanning laser projection device using a micro-galvanometer, the influence of temperature detection on projection imaging can be avoided by adopting an invisible temperature sensor.
< second embodiment >
Referring to fig. 3, a galvanometer system provided by a second embodiment of the present invention is illustrated. In this embodiment, a detection resistor is employed as the temperature detection means. Other parts in this embodiment may be the same as the corresponding parts in the first embodiment, and therefore, a repetitive description thereof will be omitted herein.
The galvanometer system shown in FIG. 3 includes MEMS micro-galvanometers 100, a Wheatstone bridge 200. In FIG. 3, the resistance R is detecteddetIs used as the temperature detecting member.
Detecting resistance RdetMay be used to sense the current or voltage of the wheatstone bridge 200. For example, in the case where the power source of the Wheatstone bridge 200 is a current source, the detection resistor RdetCan be used to sense the current of the Wheatstone bridge 200, or sense the resistance R in the case where the power supply of the Wheatstone bridge 200 is a voltage sourcedetMay be used to detect the voltage of the wheatstone bridge 200. The detected change in current or voltage may be indicative of a temperature change of the wheatstone bridge 200 and used as temperature-related information. The detection resistor RdetIs disposed at a position not affected by the temperature of the micro-vibrating mirror. The position not affected by the temperature of the micro-vibrating mirror represents the detection resistance R within the error allowable rangedetWhere the temperature influence can be neglected.
For example, the sense resistor is connected between the wheatstone bridge and its bias supply and is located outside the chip of the MEMS micro-galvanometer.
The galvanometer system shown in FIG. 3 may also include an analog-to-digital converter 400 for converting the signal to be detected by the sense resistor RdetThe detected current or voltage is converted into a digital signal for subsequent processing.
Here, since the detection resistor is located at a position not affected by the temperature of the micro-oscillator, the voltage or current detected by the detection resistor can be regarded as a detection value excluding the temperature, and the temperature information of the wheatstone bridge can be more accurately reflected.
The micro-galvanometer mirror system herein may be used in projection devices, laser engraving devices, and the like.
< micro-projection apparatus >
Embodiments of the present description also provide a micro-projection device. As shown in fig. 4, the micro-projection apparatus 3000 includes a laser light source 3100, a galvanometer system 3200, and a control part 3300.
The galvanometer system 3200 may be any of the previously described embodiments. The MEMS micro-galvanometer 100 of the galvanometer system 3200 is used to reflect laser light from a laser light source 3100 to form an image.
Fig. 5 shows an example of an application scenario of the galvanometer system. As shown in fig. 5, the galvanometer system 3100 receives laser light from a laser light source 3200. The micro-galvanometers of the galvanometer system 3200 are rotated about the X-axis and the Y-axis, respectively, to produce the projected image 5000.
Fig. 6 illustrates the effect of temperature variations on a prior art micro-projection device. As shown in fig. 6, as the micro-oscillating mirror system rotates, a scanning line "a" from right to left and a scanning line "B" from left to right are formed in the projected image. Due to the temperature change, an error occurs in the rotational position detected by the wheatstone bridge. This causes a deviation in the scanning position of the laser light when the laser light source emits the laser light to the micro-mirror system. In this case, the start and end points of scan line "A" are not aligned with the end and start points of scan line "B", resulting in a left-right split video image, as shown at 6000.
In this embodiment, the control part 3300 may correct the laser light emitted by the laser light source based on the information related to the temperature of the wheatstone bridge detected by the temperature detecting part. In this way, the detected value of the wheatstone bridge can be corrected by using the information relating to the temperature detected by the temperature detecting means. In this way, errors caused by temperature changes can be corrected, and left-right separation can be eliminated or reduced.
The control unit 3300 may adjust the timing at which the laser light source emits the laser light to the MEMS micro-mirror based on the information on the temperature of the wheatstone bridge, so as to correct the left-right separation of the image screen.
The laser light source 3100 includes a drive control system 3110, and the control unit 3300 adjusts the timing of emitting laser light by the drive control system 3110. As shown in fig. 6, the drive control system 3110 drives the laser 3120.
The relationship between the temperature and the detection error of the wheatstone bridge may be determined in advance in the factory and stored. The relationship may be stored in the form of a look-up table or a corresponding curve of both. The control section 3300 may control the driving of the laser light source 3100 using the stored relationship. In addition, a photosensitive device may be provided for detecting a deviation of the scanning lines in the projected image. In this case, the relationship between the temperature and the detection error of the wheatstone bridge can be automatically determined. In addition, the relationship can be continuously corrected in the using process, so that the projection effect is improved.
The micro-projection device may be a stand-alone module and may be connected to the electronic device through various interfaces or in a wired or wireless manner. Furthermore, the micro-projection device may also be integrated in an electronic device.
< electronic apparatus >
The embodiment of the invention also provides the electronic equipment. As shown in fig. 7, an electronic device 4000 includes any of the micro-projection devices 3000 of the above-described embodiments. Further, the electronic apparatus 4000 may further include a processing unit 4001, a memory unit 4002, an interface unit 4003, an input unit 4004, and the like.
The electronic device may be a computer, wherein the micro-projection device 3000 may be used as a display device of the computer or the like. In addition, the electronic equipment can also be a television, a smart phone and the like.
The embodiments in the present specification are all described in a progressive manner, and the same and similar parts among the embodiments may be referred to each other, and each embodiment focuses on the differences from other embodiments, and the relevant points may be referred to the parts of the other embodiments.
The receiving-end control chip and the control module mentioned in the embodiments of the present invention may include a hardware circuit and a software program. In the receiving-end control chip and the control module mentioned in the embodiments of the present invention, each control function may be implemented by an instruction in a related circuit, and how to implement a specific function by the instruction is a known technology in the art and will not be discussed herein too much.
The control unit and the drive control system according to the embodiments of the present invention may include a computer-readable storage medium on which a computer program is stored, and when the computer program is executed, the computer program implements a response function, and how to implement the specific functions is well known in the art and will not be discussed herein too much. The computer readable storage medium may be a tangible device that can hold and store the instructions for use by the instruction execution device. The computer readable storage medium may be, for example, but is not limited to, a Random Access Memory (RAM), a Read Only Memory (ROM), an erasable programmable read only memory (EPROM or flash memory), a Static Random Access Memory (SRAM).
Having described embodiments of the present invention, the foregoing description is intended to be exemplary, not exhaustive, and not limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The terminology used herein is chosen in order to best explain the principles of the embodiments, the practical application, or improvements made to the technology in the marketplace, or to enable others of ordinary skill in the art to understand the embodiments disclosed herein. The scope of the invention is defined by the appended claims.

Claims (10)

1. A galvanometer system, comprising:
MEMS micro-vibrating mirror;
a Wheatstone bridge disposed at a distal end of a rotation axis of the MEMS micro-galvanometer, wherein the Wheatstone bridge detects a rotational position of the MEMS micro-galvanometer; and
a temperature detection component for detecting information related to the temperature of the Wheatstone bridge.
2. The galvanometer system of claim 1, wherein the wheatstone bridge is made of a piezoresistive material.
3. The galvanometer system of claim 1, wherein the temperature detecting component is a detecting resistor that detects a current or a voltage of the Wheatstone bridge, a change in the current or the voltage being indicative of a change in temperature of the Wheatstone bridge,
wherein the detection resistor is disposed at a position not affected by the temperature of the micro-vibrating mirror.
4. The galvanometer system of claim 3, further comprising:
and the analog-to-digital converter is used for converting the current or the voltage into a digital signal.
5. The galvanometer system of claim 3, wherein the sense resistor is connected between the Wheatstone bridge and its bias supply and is located outside the chip of the MEMS micro-galvanometer.
6. The galvanometer system of claim 1, wherein the temperature detection component is a non-contact temperature sensor.
7. A micro-projection device, comprising:
a laser light source;
the galvanometer system of any one of claims 1-6, a MEMS micro-oscillator of the galvanometer system to reflect light from a laser light source to form an image; and
and a control unit for correcting the laser light emitted from the laser light source based on the information on the temperature of the Wheatstone bridge detected by the temperature detection unit.
8. The micro-projection device according to claim 7, wherein the control means adjusts a timing at which the laser light source emits the laser light to the MEMS micro-galvanometer based on information on the temperature of the wheatstone bridge to correct the left-right separation of the image screen.
9. The micro-projection device of claim 8, wherein the laser light source comprises a drive control system, and the control component adjusts the timing of emitting laser light by the drive control system.
10. An electronic device comprising a micro-projection device according to any of claims 7-9.
CN201910864673.4A 2019-09-09 2019-09-09 Galvanometer system, micro-projection device and electronic device Active CN110687675B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910864673.4A CN110687675B (en) 2019-09-09 2019-09-09 Galvanometer system, micro-projection device and electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910864673.4A CN110687675B (en) 2019-09-09 2019-09-09 Galvanometer system, micro-projection device and electronic device

Publications (2)

Publication Number Publication Date
CN110687675A true CN110687675A (en) 2020-01-14
CN110687675B CN110687675B (en) 2022-04-29

Family

ID=69109075

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910864673.4A Active CN110687675B (en) 2019-09-09 2019-09-09 Galvanometer system, micro-projection device and electronic device

Country Status (1)

Country Link
CN (1) CN110687675B (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111189617A (en) * 2020-02-21 2020-05-22 深圳奥比中光科技有限公司 MEMS micro-galvanometer monitoring device and method based on optical super-surface
CN111323205A (en) * 2020-02-21 2020-06-23 深圳奥比中光科技有限公司 Micro-mirror array-based MEMS micro-galvanometer monitoring device and method
CN111562667A (en) * 2020-04-30 2020-08-21 中国科学院苏州纳米技术与纳米仿生研究所 Driving control method and device of MEMS (micro-electromechanical system) micro-mirror and computer storage medium
CN112729661A (en) * 2020-12-29 2021-04-30 北京金迈捷科技有限公司 Ultralow temperature pressure sensor with temperature signal output function
CN113341560A (en) * 2021-05-22 2021-09-03 南京理工大学 Method for manufacturing curved surface special-shaped MEMS two-dimensional scanning micro-mirror machine
WO2022111975A1 (en) * 2020-11-30 2022-06-02 Asml Netherlands B.V. High accuracy temperature-compensated piezoresistive position sensing system

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060117854A1 (en) * 2004-12-03 2006-06-08 Turner Arthur M Active scan velocity control for torsional hinged MEMS scanner
CN101430340A (en) * 2008-12-06 2009-05-13 中北大学 Silicon micro-piezoresistive accelerometer capable of reducing temperature excursion
CN101936791A (en) * 2010-07-28 2011-01-05 四川蜀谷仪表科技有限公司 Digital pressure gauge
CN202351418U (en) * 2011-07-21 2012-07-25 翁锦深 Mini magnetic field measurement device based on magnetoresistive effect and magnetic field superposition
DE102011006337A1 (en) * 2011-03-29 2012-10-04 Robert Bosch Gmbh Microspigel system and associated control method
CN103250088A (en) * 2010-12-08 2013-08-14 日本电气株式会社 Video projection device, video projection method
CN104516105A (en) * 2013-09-29 2015-04-15 中强光电股份有限公司 Laser scanning device and calibration method thereof
CN107076983A (en) * 2014-07-25 2017-08-18 通快激光标记***公司 Include the system of pressure resistance type position sensor
CN108875718A (en) * 2018-09-25 2018-11-23 中国科学院苏州纳米技术与纳米仿生研究所 Face identification system and its scanning means
DE102017220813A1 (en) * 2017-11-22 2019-05-23 Robert Bosch Gmbh Laser projection device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060117854A1 (en) * 2004-12-03 2006-06-08 Turner Arthur M Active scan velocity control for torsional hinged MEMS scanner
CN101430340A (en) * 2008-12-06 2009-05-13 中北大学 Silicon micro-piezoresistive accelerometer capable of reducing temperature excursion
CN101936791A (en) * 2010-07-28 2011-01-05 四川蜀谷仪表科技有限公司 Digital pressure gauge
CN103250088A (en) * 2010-12-08 2013-08-14 日本电气株式会社 Video projection device, video projection method
DE102011006337A1 (en) * 2011-03-29 2012-10-04 Robert Bosch Gmbh Microspigel system and associated control method
CN202351418U (en) * 2011-07-21 2012-07-25 翁锦深 Mini magnetic field measurement device based on magnetoresistive effect and magnetic field superposition
CN104516105A (en) * 2013-09-29 2015-04-15 中强光电股份有限公司 Laser scanning device and calibration method thereof
CN107076983A (en) * 2014-07-25 2017-08-18 通快激光标记***公司 Include the system of pressure resistance type position sensor
DE102017220813A1 (en) * 2017-11-22 2019-05-23 Robert Bosch Gmbh Laser projection device
CN108875718A (en) * 2018-09-25 2018-11-23 中国科学院苏州纳米技术与纳米仿生研究所 Face identification system and its scanning means

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111189617A (en) * 2020-02-21 2020-05-22 深圳奥比中光科技有限公司 MEMS micro-galvanometer monitoring device and method based on optical super-surface
CN111323205A (en) * 2020-02-21 2020-06-23 深圳奥比中光科技有限公司 Micro-mirror array-based MEMS micro-galvanometer monitoring device and method
CN111323205B (en) * 2020-02-21 2021-08-03 奥比中光科技集团股份有限公司 Micro-mirror array-based MEMS micro-galvanometer monitoring device and method
CN111189617B (en) * 2020-02-21 2021-08-03 奥比中光科技集团股份有限公司 MEMS micro-galvanometer monitoring device and method based on optical super-surface
CN111562667A (en) * 2020-04-30 2020-08-21 中国科学院苏州纳米技术与纳米仿生研究所 Driving control method and device of MEMS (micro-electromechanical system) micro-mirror and computer storage medium
WO2022111975A1 (en) * 2020-11-30 2022-06-02 Asml Netherlands B.V. High accuracy temperature-compensated piezoresistive position sensing system
CN112729661A (en) * 2020-12-29 2021-04-30 北京金迈捷科技有限公司 Ultralow temperature pressure sensor with temperature signal output function
CN112729661B (en) * 2020-12-29 2024-03-19 北京金迈捷科技有限公司 Ultralow-temperature pressure sensor with temperature signal output
CN113341560A (en) * 2021-05-22 2021-09-03 南京理工大学 Method for manufacturing curved surface special-shaped MEMS two-dimensional scanning micro-mirror machine
CN113341560B (en) * 2021-05-22 2022-09-27 南京理工大学 Curved surface special-shaped MEMS two-dimensional scanning micro-mirror and preparation method thereof

Also Published As

Publication number Publication date
CN110687675B (en) 2022-04-29

Similar Documents

Publication Publication Date Title
CN110687675B (en) Galvanometer system, micro-projection device and electronic device
US10792931B2 (en) Optical deflection apparatus, head-up display apparatus, optical writing unit, image forming apparatus, and object recognition apparatus
CN104749764B (en) Optical devices, projection optical system, exposure device and the method for manufacturing article
US7280292B2 (en) Driving control device, portable optical apparatus and driving control method
US8085454B2 (en) Mirror device drive control apparatus and projector
EP2703863A1 (en) Optical device, method for moving lens of optical device, and program for moving lens of optical device
CN108072972B (en) Laser galvanometer device correction system and method
JP6606865B2 (en) Optical scanning device and manufacturing method thereof, optical scanning control device
JP6846567B2 (en) Angular magnetic field sensor for scanner
CN104516212A (en) Optical apparatus, projection optical system, exposure apparatus, and method of manufacturing article
US20160033753A1 (en) Image acquiring apparatus
US7782558B2 (en) Optical device vibrator
JP6229309B2 (en) Optical scanning apparatus, image forming apparatus, and image projection apparatus
US9268129B2 (en) Driving calibration apparatus of electrostatic MEMS scanning mirror and driving calibration method thereof
JP5296423B2 (en) Optical scanning device, image forming device, display device, and input device
KR20110082158A (en) Micromechanical component and a method for operating a micromechanical component
EP3109686B1 (en) Image display device and image display method
JP5196720B2 (en) Imaging apparatus and lens movement control method
US11536949B2 (en) Laser projection device
JP2009075376A (en) Optical axis adjusting device and imaging apparatus
JP4489130B2 (en) A tilt correction method and tilt correction apparatus for an imaging apparatus
JP2005136743A (en) Position adjusting instrument and position adjusting method for image pickup device
JP2003004433A (en) Method and apparatus for measuring minute inside diameter
JP2021033011A (en) Optical scanner, optical scanning method and program
JP2021015239A (en) Measuring system and measuring method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant