CN110684529A - Subminiature perovskite quantum dot and preparation method thereof - Google Patents
Subminiature perovskite quantum dot and preparation method thereof Download PDFInfo
- Publication number
- CN110684529A CN110684529A CN201910978174.8A CN201910978174A CN110684529A CN 110684529 A CN110684529 A CN 110684529A CN 201910978174 A CN201910978174 A CN 201910978174A CN 110684529 A CN110684529 A CN 110684529A
- Authority
- CN
- China
- Prior art keywords
- subminiature
- perovskite quantum
- quantum dot
- mesoporous silica
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/66—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
- C09K11/664—Halogenides
- C09K11/665—Halogenides with alkali or alkaline earth metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a preparation method of a subminiature perovskite quantum dot, which comprises the following steps: respectively weighing solid powder of lead bromide and cesium bromide, dissolving the solid powder in an ethanol solution, and carrying out heat preservation treatment to obtain a reactant precursor solution; dispersing mesoporous silica in a chloroform solution containing oleylamine and oleic acid, stirring, and placing the obtained mesoporous silica suspension in an ice water bath for later use; and adding the reactant precursor solution into the mesoporous silica suspension, reacting and crystallizing under the stirring condition, separating solids in the mixed liquid, and washing to obtain the subminiature perovskite quantum dot. Compared with the prior art, the method has the advantages that the prepared subminiature quantum dots have stable, ordered and controllable growth, have excellent chemical and optical stability and have good application prospect on LED devices.
Description
Technical Field
The invention relates to the field of cesium-lead halogen nano luminescent materials, in particular to a subminiature perovskite quantum dot and a preparation method thereof.
Background
In recent years, all-inorganic perovskite quantum dots (CsPbX), a new member of the perovskite family3) The fluorescent material has the advantages of narrow luminescence peak, high quantum efficiency, good stability, simple preparation process, adjustable color and the like, and is paid more and more attention by researchers. Through the continuous efforts of researchers, all-inorganic perovskite quantum dots have been applied to solar cells, Light Emitting Diodes (LEDs), white light LEDs (wleds), lasers and other fields. Since the perovskite material has the advantages of easy synthesis, low cost, high absorption coefficient, long carrier diffusion distance and the like, the research on hot tide is promoted in the photovoltaic field, and the perovskite material becomes a good-hand 'star material'. In addition, the perovskite material also has high fluorescence quantum yield and a luminescent spectrum range which is easy to regulate and control through components, so that the perovskite material has a wide application prospect field in devices such as light-emitting diodes, solar cells, photoelectric detectors, solar cells, quantum dot lasers and the like.
To date, synthetic colloids CsPbX3The main method of the perovskite quantum dots is a high-temperature thermal injection method, the perovskite nano material with high quality can be prepared by the method, but the reaction time of the method is generally limited within 5s, so that the perovskite quantum dots with uniform order and small size are difficult to obtain by controlling the reaction time. The physical properties of the perovskite quantum dots are closely related to the shape and the size, and the photoelectric properties of the material can be well regulated and controlled by regulating and controlling the size of the material and changing the shape of the material. Therefore, obtaining uniform, ordered and small size without affecting the quality of perovskite quantum dots becomes an urgent problem to be solved. The current research is in laboratory stageThe method can not be used for industrial production in a large scale, and how to improve the preparation efficiency is also an urgent problem to be solved.
Disclosure of Invention
The invention aims to overcome the defects of difficult size control, easy agglomeration and the like in the process of preparing perovskite quantum dots in the prior art, and provides the subminiature perovskite quantum dots which are uniform, ordered, small in size, simple in preparation method and easy to expand production and the preparation method thereof.
The purpose of the invention can be realized by the following technical scheme:
a preparation method of subminiature perovskite quantum dots comprises the following steps:
respectively weighing solid powder of lead bromide and cesium bromide, dissolving the solid powder in an ethanol solution, and carrying out heat preservation treatment to obtain a reactant precursor solution;
dispersing mesoporous silica in a chloroform solution containing oleylamine and oleic acid, stirring, and placing the obtained mesoporous silica suspension in an ice water bath for later use;
and adding the reactant precursor solution into the mesoporous silica suspension, reacting and crystallizing under the stirring condition, separating solids in the mixed liquid, and washing to obtain the subminiature perovskite quantum dot.
The synthesis principle of the invention is as follows: the preparation method can effectively avoid the agglomeration effect of the perovskite quantum dots, realize ordered and controllable growth, the growth process of the perovskite quantum dots is in the mesoporous silica, and the perovskite quantum dots can grow in order along the mesoporous silica pore channels. Firstly, surface modification is carried out on mesoporous silicon oxide by using oleylamine oleic acid, so that quantum dot precursors can smoothly enter silicon oxide pore channels to carry out crystallization reaction, and the growth of perovskite quantum dots is inhibited by utilizing the limiting effect of the pore channels to synthesize perovskite quantum dots with small size; meanwhile, in order to make the crystallization process more stable, the porous silicon oxide suspension is subjected to ice-water bath, the temperature of the crystallization reaction is reduced, the growth of quantum dots can be inhibited through low temperature, the dual-control effect is achieved, and ordered controllable growth is realized.
The reaction crystallization time is 5-10 minutes. By reducing the reaction temperature, the reaction crystallization time is prolonged, and the reaction time is convenient to adjust and control.
The reaction time is not longer than 10 minutes, because the crystallization time is too long, which causes the quantum dots inside the pore channel to continue growing and the crystal size cannot be controlled. The existing reaction temperature is high, generally only about 10 seconds of reaction are needed, the reaction liquid needs to be cooled rapidly in an ice-water bath, the reaction time is short, and if the reaction liquid cannot be cooled in time, well-crystallized perovskite quantum dots cannot be obtained;
in the invention, the reaction time is not shorter than 5 minutes, and the reaction time is too short, so that well-crystallized perovskite quantum dots cannot be obtained.
The concentration of lead bromide in the reactant precursor solution is 0.01-0.02 g/ml, and the concentration of cesium bromide is 0.01-0.015 g/ml;
in the mesoporous silica suspension, the concentration of the mesoporous silica is 0.001-0.01 g/ml;
the volume ratio of the reactant precursor solution to the mesoporous silica suspension is 5-10: 10-20.
The temperature of the heat preservation treatment when preparing the reactant precursor solution is 40-60 ℃, and the heat preservation time is at least 30 min.
When the mesoporous silica suspension is prepared, the stirring treatment time is at least 30 min.
The preparation method of the invention is carried out in air atmosphere.
The preparation process of the invention is carried out in the air atmosphere, because the reaction temperature of the invention is lower, the reactant is more stable, and can not react with the substance in the air, while the high temperature of about 180 ℃ adopted in the prior art needs inert gas to ensure the stability of the reactant.
The average particle diameter of the mesoporous silicon oxide is 350-400 nm, and the average pore diameter is 4.0-9.0 nm.
The particle size of the subminiature perovskite quantum dot obtained by the preparation method is not more than 8 nm.
The subminiature perovskite quantum dots are uniformly distributed in the pore canal of the mesoporous silicon oxide.
Compared with the prior art, the invention has the following advantages:
(1) the subminiature quantum dots with small size are synthesized by utilizing the limiting effect of the pore channel of the mesoporous silicon oxide microreactor, and the prepared subminiature quantum dots have stable, ordered and controllable growth;
(2) due to the protection mechanism of the mesoporous silicon oxide, the perovskite quantum dot has excellent chemical and optical stability and has good application prospect on LED devices;
(3) the whole preparation process is carried out in the air atmosphere, so that the synthesis process is simplified;
(4) the reaction temperature is low, the size of the perovskite quantum dots in the crystallization process is easy to control, and the perovskite quantum dots are not easy to agglomerate.
Drawings
FIG. 1 is an emission spectrum of a subminiature perovskite quantum dot in example 1;
FIG. 2 is a TEM photograph of the composite structure of subminiature perovskite quantum dots and mesoporous silica in example 2;
FIG. 3 is a high-power transmission electron micrograph of the subminiature perovskite quantum dot and mesoporous silica composite structure of example 2;
fig. 4 is a high-power transmission electron micrograph of the composite structure of the subminiature perovskite quantum dot and the mesoporous silica in example 3.
Detailed Description
The present invention will be described in detail with reference to specific examples. The following examples will assist those skilled in the art in further understanding the invention, but are not intended to limit the invention in any way. It should be noted that variations and modifications can be made by persons skilled in the art without departing from the spirit of the invention. All falling within the scope of the present invention.
Example 1
A preparation method of subminiature perovskite quantum dots comprises the following steps:
(1) respectively weighing 0.105g of cesium bromide and 0.138g of lead bromide solid powder, dissolving the cesium bromide and the lead bromide solid powder in a beaker filled with 10ml of ethanol, stirring for 30min to dissolve the cesium bromide and the lead bromide solid powder, and preserving the temperature at 40 ℃ for 30min to obtain a reactant precursor solution for later use;
(2) 9.235mg of mesoporous silica powder is dispersed in chloroform solution containing 1ml of oleylamine and 1ml of oleic acid and stirred for 30min, and then the mesoporous silica suspension is placed in ice water for later use, wherein the concentration of the mesoporous silica is 1.85 multiplied by 10-3g/ml；
(3) And (3) quickly injecting 1ml of the precursor solution into 5ml of mesoporous silica suspension, continuously stirring for 5min, and repeatedly washing, centrifuging, dispersing and the like to obtain the perovskite quantum dots dispersed in the mesoporous silica.
The mesoporous silica adopted in the preparation process is self-prepared by a sol-gel method and a template method, and the particle size is about 400 nm.
The perovskite quantum dot is characterized in structure, as shown in an emission spectrogram of fig. 1, the emission of the perovskite quantum dot is within a visible light region of about 525nm, so that the perovskite quantum dot has excellent optical stability and has good application prospect in LED devices.
Example 2
A preparation method of subminiature perovskite quantum dots comprises the following steps:
(1) respectively weighing 0.105g of cesium bromide and 0.138g of lead bromide solid powder, dissolving the cesium bromide and the lead bromide solid powder in a beaker filled with 10ml of ethanol, stirring for 30min to dissolve the cesium bromide and the lead bromide solid powder, and preserving the temperature at 50 ℃ for 30min to obtain a reactant precursor solution for later use;
(2) dispersing 18.47mg of mesoporous silica powder in chloroform solution containing 1ml of oleylamine and 1ml of oleic acid, stirring for 30min, and then placing the mesoporous silica suspension in ice water for later use, wherein the concentration of the mesoporous silica is 2.31 multiplied by 10-3g/ml；
(3) And (3) quickly injecting 1ml of the precursor solution into 8ml of mesoporous silica suspension, continuously stirring for 8min, and repeatedly washing, centrifuging, dispersing and the like to obtain the perovskite quantum dots dispersed in the mesoporous silica.
The mesoporous silica adopted in the preparation process is self-prepared by a sol-gel method and a template method, and the particle size is about 400 nm.
Performing structural characterization on the perovskite quantum dots, as shown in a TEM image of FIG. 2, wherein the quantum dots are uniformly distributed in the mesoporous silicon oxide; further analyzing the HRTEM of the perovskite quantum dot and mesoporous silica composite structure, as shown in fig. 3, it can be seen from the figure that the quantum dots are distributed orderly along the pore channel of the mesoporous silica.
Example 3
A preparation method of subminiature perovskite quantum dots comprises the following steps:
(1) respectively weighing 0.105g of cesium bromide and 0.138g of lead bromide solid powder, dissolving the cesium bromide and the lead bromide solid powder in a beaker filled with 10ml of ethanol, stirring for 30min to dissolve the cesium bromide and the lead bromide solid powder, and preserving the temperature at 60 ℃ for 30min to obtain a reactant precursor solution for later use;
(2) 92.35mg of mesoporous silica powder is dispersed in chloroform solution containing 1ml of oleylamine and 1ml of oleic acid and stirred for 30min, and then the mesoporous silica suspension is placed in ice water for later use, wherein the concentration of the mesoporous silica is 9.23 multiplied by 10-3g/ml；
(3) And (3) quickly injecting 1ml of the precursor solution into 10ml of mesoporous silica suspension, continuously stirring for 10min, and repeatedly washing, centrifuging, dispersing and the like to obtain the perovskite quantum dots dispersed in the mesoporous silica.
The mesoporous silica adopted in the preparation process is self-prepared by a sol-gel method and a template method, and the particle size is about 400 nm.
The perovskite quantum dot is characterized in structure, as shown in an HRTEM image of FIG. 4, obvious lattice stripes can be seen from the image, and the quantum dot is proved to have good crystallinity.
Example 4
A preparation method of subminiature perovskite quantum dots comprises the following steps:
(1) respectively weighing 0.15g of cesium bromide and 0.2g of lead bromide solid powder, dissolving the cesium bromide and the lead bromide solid powder in a beaker filled with 10ml of ethanol, stirring for 30min to dissolve the cesium bromide and the lead bromide solid powder, and preserving the temperature at 40 ℃ for 30min to obtain a reactant precursor solution for later use;
(2) 9.235mg of mesoporesDispersing silicon oxide powder in chloroform solution containing 1ml oleylamine and 1ml oleic acid, stirring for 30min, and placing mesoporous silicon oxide suspension in ice water for later use, wherein the concentration of mesoporous silicon oxide is 1.85 × 10-3g/ml；
(3) And (3) quickly injecting 1ml of the precursor solution into 5ml of mesoporous silica suspension, continuously stirring for 5min, and repeatedly washing, centrifuging, dispersing and the like to obtain the perovskite quantum dots dispersed in the mesoporous silica.
The mesoporous silica adopted in the preparation process is self-prepared by a sol-gel method and a template method, and the particle size is about 350 nm.
The invention provides a method for preparing subminiature perovskite quantum dots by taking mesoporous silicon oxide as a microreactor, which mainly solves the technical problems that the size is difficult to control, the agglomeration is easy to happen and the like in the process of preparing the perovskite quantum dots; the preparation method can effectively avoid the agglomeration effect of the perovskite quantum dots and realize ordered and controllable growth. According to the invention, the mesoporous silica is subjected to surface modification by using oleylamine oleic acid, so that quantum dot precursors can smoothly enter pores of the silica, the ice-water bath chloroform solution can quickly crystallize quantum dots, and the growth of the quantum dots can be inhibited at low temperature besides the limitation effect of the pores, so that the dual control effect is achieved.
The microminiature quantum dots prepared by the method have the characteristics of stability, order, controllable growth and the like. Meanwhile, due to the protection mechanism of the mesoporous silicon oxide, the perovskite quantum dot has excellent chemical and optical stability, and has a good application prospect in LED devices.
The foregoing description of specific embodiments of the present invention has been presented. It is to be understood that the present invention is not limited to the specific embodiments described above, and that various changes and modifications may be made by one skilled in the art within the scope of the appended claims without departing from the spirit of the invention.
Claims (9)
1. The preparation method of the subminiature perovskite quantum dot is characterized by comprising the following steps:
weighing solid powder of lead bromide and cesium bromide respectively, dissolving the solid powder in ethanol, and carrying out heat preservation treatment to obtain a reactant precursor solution;
dispersing mesoporous silica in a chloroform solution containing oleylamine and oleic acid, stirring, and placing the obtained mesoporous silica suspension in an ice water bath for later use;
and adding the reactant precursor solution into the mesoporous silica suspension, reacting and crystallizing under the stirring condition, separating solids in the mixed liquid, and washing to obtain the subminiature perovskite quantum dot.
2. The method for preparing subminiature perovskite quantum dot according to claim 1, wherein the time of the reaction crystallization is 5-10 minutes.
3. The method for preparing subminiature perovskite quantum dot according to claim 1,
the concentration of lead bromide in the reactant precursor solution is 0.01-0.02 g/ml, and the concentration of cesium bromide is 0.01-0.015 g/ml;
the concentration of the mesoporous silicon oxide in the mesoporous silicon oxide suspension is 0.001-0.01 g/ml;
the volume ratio of the reactant precursor solution to the mesoporous silica suspension is 5-10: 10-20.
4. The method for preparing subminiature perovskite quantum dots according to claim 1, wherein the temperature of the heat preservation treatment during the preparation of the reactant precursor solution is 40-60 ℃ and the heat preservation time is at least 30 min.
5. The method for preparing subminiature perovskite quantum dots according to claim 1, wherein the stirring treatment time is at least 30min when preparing the mesoporous silica suspension.
6. The method for preparing subminiature perovskite quantum dot according to claim 1, wherein the mesoporous silica has an average particle size of 350-400 nm and an average pore size of 4.0-9.0 nm.
7. The method for preparing subminiature perovskite quantum dot according to claim 1, wherein the preparation method is performed in air atmosphere.
8. The subminiature perovskite quantum dot obtained by the preparation method according to claim 1, wherein the subminiature perovskite quantum dot has a particle size of not more than 8 nm.
9. The subminiature perovskite quantum dot according to claim 1, wherein the subminiature perovskite quantum dot is uniformly distributed in the pore channel of the mesoporous silica.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910978174.8A CN110684529B (en) | 2019-10-15 | 2019-10-15 | Subminiature perovskite quantum dot and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910978174.8A CN110684529B (en) | 2019-10-15 | 2019-10-15 | Subminiature perovskite quantum dot and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110684529A true CN110684529A (en) | 2020-01-14 |
| CN110684529B CN110684529B (en) | 2022-08-23 |
Family
ID=69112800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910978174.8A Active CN110684529B (en) | 2019-10-15 | 2019-10-15 | Subminiature perovskite quantum dot and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110684529B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114315165A (en) * | 2021-11-17 | 2022-04-12 | 无锡极电光能科技有限公司 | Colored perovskite glaze glass, preparation method thereof and solar cell |
| CN114471387A (en) * | 2021-08-13 | 2022-05-13 | 松山湖材料实验室 | Aerogel containing quantum dots and preparation method thereof |
| CN114686218A (en) * | 2022-03-24 | 2022-07-01 | 无锡极电光能科技有限公司 | Perovskite quantum dot and preparation method and application thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105733574A (en) * | 2016-01-31 | 2016-07-06 | 南京理工大学 | Method for preparing perovskite quantum dots by low-temperature solution process |
| CN106634986A (en) * | 2016-11-09 | 2017-05-10 | 南京理工大学 | Metal and organic frame complex method capable of improving stability of perovskite |
-
2019
- 2019-10-15 CN CN201910978174.8A patent/CN110684529B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105733574A (en) * | 2016-01-31 | 2016-07-06 | 南京理工大学 | Method for preparing perovskite quantum dots by low-temperature solution process |
| CN106634986A (en) * | 2016-11-09 | 2017-05-10 | 南京理工大学 | Metal and organic frame complex method capable of improving stability of perovskite |
Non-Patent Citations (1)
| Title |
|---|
| CHEN PENG: "In situ growth of ultrasmall cesium lead bromine quantum dots in a mesoporous silica matrix and their application in flexible light-emitting diodes", 《NANOSCALE》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114471387A (en) * | 2021-08-13 | 2022-05-13 | 松山湖材料实验室 | Aerogel containing quantum dots and preparation method thereof |
| CN114471387B (en) * | 2021-08-13 | 2022-12-23 | 松山湖材料实验室 | Aerogel containing quantum dots and preparation method thereof |
| CN114315165A (en) * | 2021-11-17 | 2022-04-12 | 无锡极电光能科技有限公司 | Colored perovskite glaze glass, preparation method thereof and solar cell |
| CN114315165B (en) * | 2021-11-17 | 2023-12-26 | 无锡极电光能科技有限公司 | Colored perovskite glaze glass, preparation method thereof and solar cell |
| CN114686218A (en) * | 2022-03-24 | 2022-07-01 | 无锡极电光能科技有限公司 | Perovskite quantum dot and preparation method and application thereof |
| CN114686218B (en) * | 2022-03-24 | 2024-01-30 | 无锡极电光能科技有限公司 | Perovskite quantum dot and preparation method and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110684529B (en) | 2022-08-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110684529B (en) | Subminiature perovskite quantum dot and preparation method thereof | |
| CN111348674B (en) | Cs3Cu2X5Preparation method of (X ═ Cl, Br and I) nanocrystal and product | |
| US8410470B2 (en) | Core-shell quantum dot fluorescent fine particles | |
| TWI619856B (en) | Continuous synthesis of high quantum yield inp/zns nanocrystals | |
| CN108410467B (en) | Quantum dot, preparation method and application thereof | |
| CN110408379B (en) | Preparation method of narrow half-peak width quantum dot, quantum dot and quantum dot photoelectric device | |
| JP2011190127A (en) | Gallium oxide single crystal and method for producing the same | |
| CN103361066A (en) | Preparation method for synthesizing CdSe/CdS core-shell structure quantum dots through one step | |
| CN111286779A (en) | Method for growing large-size perovskite single crystal by using ternary mixed solvent | |
| CN109852387A (en) | One kind passing through doping Ce4+Ion regulation CsPbBr3The method of perovskite quantum dot size pattern and luminescence generated by light | |
| CN111253942A (en) | Up-conversion nano luminescent material with perovskite structure and preparation method and application thereof | |
| CN111270310A (en) | Pure inorganic narrow-spectrum blue-violet light emitting two-dimensional perovskite single crystal material and growth method | |
| CN109941977B (en) | Method for synthesizing cadmium selenide quantum dots | |
| CN111704168A (en) | Nanocrystalline of manganese-doped pure inorganic perovskite coated by silicon dioxide single particles and preparation method and application thereof | |
| CN112940712B (en) | Blue fluorescent core-shell structure quantum dot and preparation method thereof | |
| CN114605987A (en) | Lead-doped zinc-based halide nano luminescent material and preparation method and application thereof | |
| CN111171814B (en) | Synthesis method of perovskite nanorod | |
| CN110408391B (en) | Preparation method of quantum dot, quantum dot/UV glue solution and quantum dot doped optical fiber | |
| CN107364838B (en) | The preparation method of the gallium nitride nano material of iron series element doping | |
| CN114988462B (en) | Method for preparing perovskite micron sheet with multi-wavelength emission based on chemical vapor deposition method | |
| CN111117615A (en) | Quantum dot material, preparation method and application thereof, and light-emitting device | |
| CN110563030A (en) | Synthesis method and application of high-purity two-dimensional layered lead cesium bromide nanosheet | |
| CN113736459B (en) | Calcium nitrate passivated high efficiency stable cubic phase CsPbI 3 Method for preparing nanocrystalline | |
| US20240023357A1 (en) | Quantum dot and method for preparing the same | |
| CN111441087B (en) | Preparation method of 6H-silicon carbide two-dimensional single crystal nanosheet |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |