CN110683547B - 72-pair rod reduction furnace high-voltage breakdown system and method thereof - Google Patents
72-pair rod reduction furnace high-voltage breakdown system and method thereof Download PDFInfo
- Publication number
- CN110683547B CN110683547B CN201911127195.5A CN201911127195A CN110683547B CN 110683547 B CN110683547 B CN 110683547B CN 201911127195 A CN201911127195 A CN 201911127195A CN 110683547 B CN110683547 B CN 110683547B
- Authority
- CN
- China
- Prior art keywords
- breakdown
- voltage
- phase
- silicon
- pairs
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000015556 catabolic process Effects 0.000 title claims abstract description 175
- 230000009467 reduction Effects 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 186
- 238000012423 maintenance Methods 0.000 claims abstract description 21
- 230000004913 activation Effects 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000013468 resource allocation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000003797 telogen phase Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
Abstract
The utility model discloses a novel high-voltage breakdown system and method of a 72-pair rod reduction furnace, wherein 8 pairs of silicon cores are broken down firstly when a1 st phase silicon core is broken down, and the broken down voltage only needs 1/4 of the highest breakdown voltage, so that the 8 pairs of silicon cores are maintained by a 4-face high-voltage breakdown cabinet, the other 4-face high-voltage breakdown cabinet breaks down the remaining 4 pairs of silicon cores of the first phase, and the 12 pairs of silicon cores are uniformly delivered to a power control cabinet for control after being broken down. After the front 3-phase silicon core breaks down, the temperature of the whole reduction furnace rises, and the breakdown voltage of the rest rear 3-phase silicon core is less than half of that of the front 3-phase silicon core, so that one side of the high-voltage breakdown cabinet is used for simultaneously breaking down 2 pairs of silicon cores, the 6 sides of the high-voltage breakdown cabinet simultaneously work, 12 pairs of silicon cores are broken down, and the breakdown is controlled by the control cabinet after the breakdown is completed. The utility model shortens the high-voltage maintenance time of the silicon core, reduces the damage to the silicon core when the high-voltage state is maintained for a long time while fast breakdown, reduces the traditional 12-surface high-voltage breakdown cabinet to 8-surface high-voltage breakdown cabinet, and saves equipment investment.
Description
Technical Field
The utility model relates to the technical field of polysilicon production, in particular to a novel 72-pair rod reduction furnace high-voltage breakdown system and a method thereof.
Background
At present, a 72-pair rod reduction furnace is generally divided into six phases, 12 pairs of rod reduction furnaces are arranged in each phase, and according to a traditional breakdown mode, a 12-surface high-voltage breakdown cabinet is required to be arranged, so that the rod reduction furnace occupies more resources and has large equipment investment.
The utility model patent CN 204310823U discloses a 72-pair rod polycrystalline silicon reduction furnace power supply system, which utilizes 1 transformer to supply power for 6 power cabinets, divides 72 pairs of silicon rods into 6 phases, utilizes 4 high-voltage starting power supplies to connect different silicon rods of a group of silicon rods in one phase of silicon rods in series so as to break down the silicon rods, and utilizes 1 power cabinet to heat the phase of silicon rods with constant current after the phase of silicon rods are broken down; when 12 pairs of silicon rods of each phase are divided into 3 groups, 4 high-voltage starting power supplies load voltages to the 3 groups of silicon rods in sequence, and the magnitudes of currents on the broken-down 2 groups of silicon rods are respectively maintained by using 2 high-voltage switching maintenance power supplies. However, because the high-voltage starting power supply and the high-voltage switching maintaining power supply have different functions and actions, the functions are relatively independent, namely, the independent high-voltage starting power supply does not have the maintaining function, the independent high-voltage switching maintaining power supply does not have the high-voltage breakdown function, and the resource allocation efficiency is not maximized.
Disclosure of Invention
In order to solve the above problems, two characteristics of the silicon core breakdown process are obtained by analyzing the silicon core breakdown process and analyzing the silicon substance characteristics: (1) After the silicon core breaks down, the resistance is greatly reduced, and the voltage for maintaining the 35A current only needs 1/4 of the highest breakdown voltage; (2) With the increase of the number of the breakdown silicon cores, the temperature in the reduction furnace is increased, and the highest voltage of the breakdown silicon cores is greatly reduced to be less than half of the voltage required for breakdown of the first phase. Therefore, the utility model provides a novel 72-pair rod reduction furnace high-voltage breakdown system, which comprises silicon cores and a chassis, wherein the silicon cores are 72 pairs in total and are arranged on the chassis according to concentric circles to form 6 distribution circles, the silicon cores are divided into 1-6 phases, each phase comprises 12 pairs of silicon cores, and each silicon core in each phase is connected in series and arranged in groups. The system also comprises 8 high-voltage breakdown cabinets and at least 1 power control cabinet, wherein the high-voltage breakdown cabinets are connected in series with each phase of silicon core and can load voltage for breakdown and maintenance of the silicon core; the power control cabinet is connected with 6-phase silicon cores in series, and can heat each phase of silicon core with constant current after the phase of silicon core is broken down.
Further, the 12 pairs of silicon cores of each phase in the 1 st to 3 rd phase silicon cores are arranged into two groups, the 1 st group comprises 8 pairs of silicon cores, the 2 nd group comprises 4 pairs of silicon cores, the 8 pairs of silicon cores of the 1 st group are broken down and maintained by the 1 st to 4 th high-voltage breakdown cabinets, and the 4 pairs of silicon cores of the 2 nd group are broken down by the 5 th to 8 th high-voltage breakdown cabinets.
Furthermore, the 12 pairs of silicon cores of each phase in the 4 th to 6 th phase silicon cores are arranged into one group, and are broken down by the 1 st to 6 th high-voltage breakdown cabinets.
Further, among the 1-6 phase silicon cores, the 1-3 phase silicon core is arranged on the outer ring of the chassis, and the 4-6 phase silicon core is arranged on the inner ring of the chassis. When the 1 st to 3 rd phase silicon cores are arranged on the outer ring, only the water temperature of the furnace barrel of the reduction furnace is 133 ℃, the outer ring silicon cores are subjected to more radiation heat transfer, the temperature of the outer ring silicon cores is relatively high, the high temperature of the semiconductor material is favorable for high-voltage starting, and the breakdown voltage required by the same carrier can be reduced by about 300V every 10 ℃ higher.
The utility model also provides a novel high-voltage breakdown method of the 72-pair rod reduction furnace, which comprises the following steps:
s1, breaking down a1 st phase silicon core: the 1 st to 4 th high voltage breakdown cabinets are used for breakdown of the 8 pairs of silicon cores of the 1 st group of the phase, the 1 st to 4 th high voltage breakdown cabinets are used for maintaining after breakdown, the 5 th to 8 th high voltage breakdown cabinets are used for breakdown of the 4 pairs of silicon cores of the 2 nd group of the phase, and the 12 pairs of silicon cores are controlled by the power control cabinet after all the silicon cores are broken down;
s2, sequentially breaking down the 2 nd and 3 rd phase silicon cores: the breakdown steps of the 2 nd and 3 rd phase silicon cores are the same as the breakdown step S1 of the 1 st phase silicon core;
s3, breaking down a 4 th phase silicon core: meanwhile, the 12 pairs of silicon cores of the phase are broken down by using the 1 st to 6 th high-voltage breakdown cabinets, and the power control cabinet is used for controlling the broken down silicon cores after all the silicon cores are broken down;
s4, sequentially breaking down the 5 th and 6 th phase silicon cores: the breakdown steps of the 5 th and 6 th phase silicon cores are the same as the breakdown step S3 of the 4 th phase silicon core.
Further, before executing step S1, the high voltage breakdown state current and voltage, the high voltage maintenance activation current and voltage, and the initial current, the activation reduction current and voltage of the power control cabinet are set.
Further, in step S1, the 1 st to 4 th high voltage breakdown cabinets breakdown the 8 pairs of silicon cores of the 1 st phase and the 1 st group with the high voltage breakdown state voltage as breakdown voltage, if the breakdown is difficult, the breakdown voltage is increased and the recovery is performed after the breakdown.
Further, in step S1, after the phase 1 group 1 8 pair silicon cores are broken down, if the breakdown current is consistent with the high voltage breakdown state current, but the breakdown voltage is not up to the high voltage maintenance activation voltage, the breakdown current is increased, and meanwhile, the breakdown voltage value state is observed.
Further, in step S1, if the breakdown voltage is consistent with the high voltage maintenance activation voltage, the 8 pairs of silicon cores in the 1 st phase and the 1 st group enter the high voltage maintenance state, and the 4 pairs of silicon cores in the 1 st phase and the 2 nd group enter the high voltage breakdown state.
Further, in step S1, after the 1 st phase 12 breaks down all the silicon cores, the breakdown current is reduced to the activation reduction current, and when the breakdown voltage is reduced to the activation reduction voltage, the 12 pairs of silicon cores are sent to the power control cabinet to be controlled.
The utility model has the beneficial effects that:
(1) According to the characteristics of the high-voltage breakdown process of the silicon core, the traditional high-voltage breakdown mode of the silicon core is improved, the traditional 12-surface of the high-voltage breakdown cabinet is reduced to 8-surface, and the equipment investment is saved.
(2) When the 1 st phase silicon core is broken down, 8 pairs of silicon cores are broken down firstly, and the broken down voltage only needs 1/4 of the highest breakdown voltage, so that the 8 pairs of silicon cores are maintained by a 4-face high-voltage breakdown cabinet, the other 4-face high-voltage breakdown cabinet breaks down the remaining 4 pairs of silicon cores of the first phase, and 12 pairs of silicon cores are broken down and then uniformly delivered to a power control cabinet for control. After the front 3-phase silicon core breaks down, the temperature of the whole reduction furnace rises, and the breakdown voltage of the rest rear 3-phase silicon core is less than half of that of the front 3-phase silicon core, so that one side of the high-voltage breakdown cabinet is used for simultaneously breaking down 2 pairs of silicon cores, the 6 sides of the high-voltage breakdown cabinet simultaneously work, 12 pairs of silicon cores are broken down, and the breakdown is controlled by the control cabinet after the breakdown is completed. The process shortens the high-voltage maintaining time of the silicon core, and reduces the damage to the silicon core caused by long-time maintaining of the high-voltage state while fast breakdown.
(3) The 1 st to 3 rd phase silicon cores are arranged on the outer ring of the chassis, and the temperature is relatively high due to more radiation heat transfer received by the outer ring silicon cores, so that the high-voltage starting is facilitated;
(4) The high-voltage breakdown cabinet of the high-voltage breakdown system of the reduction furnace has both a high-voltage breakdown function and a maintenance function, and the resource allocation efficiency of the high-voltage breakdown system of the reduction furnace is maximized.
Drawings
FIG. 1 is an electrode layout of a 72 pair silicon die of example 2 of the present utility model;
FIG. 2 is a high voltage breakdown electrical connection diagram of embodiment 2 of the present utility model;
fig. 3 is a high voltage breakdown current and voltage set point for example 2 of the present utility model.
Detailed Description
For a clearer understanding of technical features, objects, and effects of the present utility model, a specific embodiment of the present utility model will be described with reference to the accompanying drawings. It should be understood that the particular embodiments described herein are illustrative only and are not intended to limit the utility model, i.e., the embodiments described are merely some, but not all, of the embodiments of the utility model. The components of the embodiments of the present utility model generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the utility model, as presented in the figures, is not intended to limit the scope of the utility model, as claimed, but is merely representative of selected embodiments of the utility model. All other embodiments, which can be made by a person skilled in the art without making any inventive effort, are intended to be within the scope of the present utility model.
Example 1
By analyzing the silicon core breakdown process and the silicon substance characteristics, two characteristics of the silicon core breakdown process can be obtained: (1) After the silicon core breaks down, the resistance is greatly reduced, and the voltage for maintaining the 35A current only needs 1/4 of the highest breakdown voltage; (2) With the increase of the number of the breakdown silicon cores, the temperature in the reduction furnace is increased, and the highest voltage of the breakdown silicon cores is greatly reduced to be less than half of the voltage required for breakdown of the first phase.
According to the analysis, the embodiment provides a novel 72-pair rod reduction furnace high-voltage breakdown system and a method thereof, wherein the high-voltage breakdown system comprises 72 pairs of silicon cores, 1 chassis, 8 high-voltage breakdown cabinets and 1 power control cabinet, the 72 pairs of silicon cores are arranged on the chassis according to concentric circles to form 6 distribution circles, the silicon cores are divided into 1-6 phases, each phase comprises 12 pairs of silicon cores, and each silicon core in each phase is connected in series and arranged in groups. The high-voltage breakdown cabinet is connected with each phase of silicon core in series, voltage can be loaded on the silicon core to breakdown and maintain the silicon core, the power control cabinet is connected with 6 phases of silicon cores in series, and the phase of silicon core can be heated by constant current after each phase of silicon core is broken down.
Specifically, 12 pairs of silicon cores of each phase in the 1 st to 3 rd phase silicon cores are arranged into two groups, the 1 st group comprises 8 pairs of silicon cores, the 2 nd group comprises 4 pairs of silicon cores, the 8 pairs of silicon cores of the 1 st group are broken down and maintained by the 1 st to 4 th high-voltage breakdown cabinets, and the 4 pairs of silicon cores of the 2 nd group are broken down by the 5 th to 8 th high-voltage breakdown cabinets. And the 12 pairs of silicon cores of each phase in the 4 th to 6 th phase silicon cores are only arranged into one group, and are broken down by the 1 st to 6 th high-voltage breakdown cabinets.
The novel high-voltage breakdown method of the 72-pair rod reduction furnace comprises the following steps of:
s1, breaking down a1 st phase silicon core: the 1 st to 4 th high voltage breakdown cabinets are used for breakdown of the 8 pairs of silicon cores of the 1 st group of the phase, the 1 st to 4 th high voltage breakdown cabinets are used for maintaining after breakdown, the 5 th to 8 th high voltage breakdown cabinets are used for breakdown of the 4 pairs of silicon cores of the 2 nd group of the phase, and the 12 pairs of silicon cores are controlled by the power control cabinet after all the silicon cores are broken down;
s2, sequentially breaking down the 2 nd and 3 rd phase silicon cores: the breakdown steps of the 2 nd and 3 rd phase silicon cores are the same as the breakdown step S1 of the 1 st phase silicon core;
s3, breaking down a 4 th phase silicon core: meanwhile, the 12 pairs of silicon cores of the phase are broken down by using the 1 st to 6 th high-voltage breakdown cabinets, and the power control cabinet is used for controlling the broken down silicon cores after all the silicon cores are broken down;
s4, sequentially breaking down the 5 th and 6 th phase silicon cores: the breakdown steps of the 5 th and 6 th phase silicon cores are the same as the breakdown step S3 of the 4 th phase silicon core.
Before step S1 is executed, a high-voltage breakdown state current and a high-voltage breakdown state voltage, a high-voltage maintenance activation current and a high-voltage maintenance activation voltage of the high-voltage breakdown cabinet are set, and an initial current, an activation reduction current and a power control cabinet are set.
The step S1 includes the following sub-steps:
s11, the 1 st to 4 th high-voltage breakdown cabinets take the high-voltage breakdown state voltage as breakdown voltage to breakdown 8 pairs of silicon cores of the 1 st phase and the 1 st group, if the breakdown is difficult, the breakdown voltage is increased, and the silicon cores are recovered after the breakdown.
S12, after the 8 pairs of silicon cores of the 1 st phase and the 1 st group are broken down, if the breakdown current is consistent with the high-voltage breakdown state current, but the breakdown voltage is not higher than the high-voltage maintenance activation voltage, the breakdown current is increased, and meanwhile, the state of the breakdown voltage value is observed.
S13, if the breakdown voltage is consistent with the high-voltage maintenance activation voltage, 8 pairs of silicon cores in the 1 st phase and the 1 st group enter a high-voltage maintenance state, and 4 pairs of silicon cores in the 1 st phase and the 2 nd group enter a high-voltage breakdown state.
S14, after the silicon core is completely broken down by the 1 st phase 12, reducing the breakdown current to an activation reduction current, and when the breakdown voltage is reduced to the activation reduction voltage, controlling the silicon core by the 12 pairs by a power control cabinet.
Example 2
This example is based on example 1:
of the 1 st to 6 th phase silicon cores, the 1 st to 3 rd phase silicon cores are arranged on the outer ring of the chassis, the 4 th to 6 th phase silicon cores are arranged on the inner ring of the chassis, the electrode arrangement diagram of the 6 th phase 72 silicon cores is shown in fig. 1, wherein C1, B1, A1, C2, B2 and A2 respectively represent the 1 st to 6 th phase silicon cores, L, N respectively represent the live wire and the zero wire, the L end is the beginning of one phase, and the N end is the end of one phase. When the 1 st to 3 rd phase silicon cores are arranged on the outer ring, the temperature of the furnace cylinder of the reduction furnace is 133 ℃, the radiation heat transfer of the silicon cores on the outer ring is more, the temperature of the silicon cores on the outer ring is relatively higher, the high temperature of the semiconductor material is favorable for high-voltage starting, and the breakdown voltage required by the same carrier can be reduced by about 300V every 10 ℃ higher.
The specific high voltage breakdown method for the silicon core in this embodiment 72 is as follows:
(1) Preparation stage
An initial current 55A of the power control cabinet is set, a reduction voltage is activated for 600V, and a reduction current 55A (50A/45A) is activated.
A high voltage breakdown state current 39A is set, and a high voltage breakdown state voltage 5000V.
The high voltage maintenance activation voltage 550V of the high voltage breakdown cabinet is set, and the high voltage maintenance activation current 55A (50A/45A) is set.
(2) Breakdown and maintenance process
A high voltage breakdown electrical connection is shown in fig. 2.
High voltage breakdown state current 39A, high voltage breakdown state voltage 5000V. The 1 st phase silicon core (usually C1 phase) is started to be pressed, 8 pairs of silicon cores are arranged before high-voltage breakdown is started, if the silicon cores are not easy to break down, a given voltage value can be properly increased, and the silicon cores are recovered after the silicon cores break down. When the breakdown current is consistent with the given value (39A), the voltage is less than 550V, the given current can be gradually increased, and the state of the voltage value is observed. If the breakdown current is 50A, the high-voltage maintenance activation current can be changed into 50A, so that the current voltage in the high-voltage breakdown state is consistent with the current voltage condition of high-voltage maintenance, the first 8 pairs of silicon cores enter the high-voltage maintenance state, and the second 4 pairs of silicon cores enter the pressing state (the high-voltage breakdown current voltage does not need to be changed). After the 4 pairs of silicon cores are broken down, the current rises to more than 35A, the given current is added, and the current is gradually adjusted to be consistent with the activation current, so that the current reaches the activation current when the voltage is reduced to the activation reduction voltage, and the 1 st phase 12 can be smoothly delivered to the power control cabinet after the silicon cores are completely broken down. The process shortens the high-voltage maintaining time of the silicon core, and reduces the damage to the silicon core caused by long-time maintaining of the high-voltage state while fast breakdown is realized.
The high voltage breakdown state current was set to 40A with 5000V unchanged. The phase 2 silicon core (usually the phase B1) is started to be pressed, and the breakdown process is the same as that of the phase 1 silicon core. Since a phase silicon core is broken down, when the breakdown voltage of the 8 pairs of phase 2 is reduced to 550V, the current is lower (for example, 50A), the high-voltage maintaining current can be reduced to be the same as the breakdown current at the moment, the current voltage in the high-voltage breakdown state is consistent with the current voltage condition of high-voltage maintaining, and the 8 pairs of silicon cores enter the high-voltage maintaining state. If the high-voltage current is 50A, the 12 pairs of silicon cores of the 2 nd phase are completely broken down, and meanwhile, the voltage is reduced to the switching voltage, and the activation current and the current of the power control cabinet can be adjusted to be 50A, so that the activation current and the current of the power control cabinet can be smoothly delivered to the power control cabinet.
It should be noted that the activation reduction current is consistent with the current of the power control cabinet so as to reduce the influence of current fluctuation on the silicon core.
When the 3 rd phase and the rest phases are pressed, the current of the activation, maintenance, pressing and power control cabinet can be directly set to 45A due to the rise of the furnace temperature, and as shown in fig. 3, the pressing breakdown can be smoothly carried out. The current can be slowly added after being successfully delivered to the power control cabinet.
The foregoing is merely a preferred embodiment of the utility model, and it is to be understood that the utility model is not limited to the form disclosed herein but is not to be construed as excluding other embodiments, but is capable of numerous other combinations, modifications and environments and is capable of modifications within the scope of the inventive concept, either as taught or as a matter of routine skill or knowledge in the relevant art. And that modifications and variations which do not depart from the spirit and scope of the utility model are intended to be within the scope of the appended claims.
In the description of the present utility model, it should be noted that, directions or positional relationships indicated by terms such as "center", "upper", "lower", "left", "right", "inner", "outer", etc., are directions or positional relationships based on those shown in the drawings, or are directions or positional relationships conventionally put in use of the present utility model, are merely for convenience of describing the present utility model and simplifying the description, and are not indicative or implying that the apparatus or element to be referred to must have a specific direction, be constructed and operated in a specific direction, and thus should not be construed as limiting the present utility model. Furthermore, the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
In the description of the present utility model, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; either a wired connection or a wireless connection.
Claims (3)
1. The high-voltage breakdown method of the 72-pair rod reduction furnace is characterized by comprising the following steps of:
s1, breaking down a1 st phase silicon core: the 1 st to 4 th high-voltage breakdown cabinets are used for breakdown of 8 pairs of silicon cores of the 1 st group of the phase, the 1 st to 4 th high-voltage breakdown cabinets are used for maintaining after breakdown, the 5 th to 8 th high-voltage breakdown cabinets are used for breakdown of 4 pairs of silicon cores of the 2 nd group of the phase, and the 12 pairs of silicon cores are controlled by the power control cabinet after all the silicon cores are broken down;
s2, sequentially breaking down the 2 nd and 3 rd phase silicon cores: the breakdown steps of the 2 nd and 3 rd phase silicon cores are the same as the breakdown step S1 of the 1 st phase silicon core;
s3, breaking down the 4 th phase silicon core: meanwhile, the 12 pairs of silicon cores of the phase are broken down by using the 1 st to 6 th high-voltage breakdown cabinets, and the power control cabinet is used for controlling the broken down silicon cores after all the silicon cores are broken down;
s4, sequentially breaking down the 5 th and 6 th phase silicon cores: the breakdown steps of the 5 th phase silicon core and the 6 th phase silicon core are the same as the breakdown step S3 of the 4 th phase silicon core;
in the step S1, the 1 st to 4 th high-voltage breakdown cabinets take the high-voltage breakdown state voltage as breakdown voltage to breakdown 8 pairs of silicon cores of the 1 st phase and the 1 st group, if the breakdown is difficult, the breakdown voltage is increased and the silicon cores are recovered after the breakdown; after the 8 pairs of silicon cores of the 1 st phase and the 1 st group are broken down, if the breakdown current is consistent with the high-voltage breakdown state current, but the breakdown voltage is not higher than the high-voltage maintenance activation voltage, the breakdown current is increased, and meanwhile, the state of the breakdown voltage value is observed; and after the 1 st phase 12 breaks down all the silicon cores, reducing the breakdown current to an activation reduction current, and when the breakdown voltage is reduced to the activation reduction voltage, controlling the 12 first phase silicon cores by a power control cabinet.
2. The method according to claim 1, wherein the step S1 is performed by setting a high voltage breakdown state current and voltage of the high voltage breakdown cabinet, and a high voltage sustain activation current and voltage, and setting an initial current, an activation reduction current, and a voltage of the power control cabinet.
3. The method according to claim 2, wherein in step S1, if the breakdown voltage is consistent with the high voltage sustaining activation voltage, the 8 pairs of silicon cores in group 1 of phase 1 enter the high voltage sustaining state, and the 4 pairs of silicon cores in group 2 of phase 1 enter the high voltage breakdown state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911127195.5A CN110683547B (en) | 2019-11-18 | 2019-11-18 | 72-pair rod reduction furnace high-voltage breakdown system and method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911127195.5A CN110683547B (en) | 2019-11-18 | 2019-11-18 | 72-pair rod reduction furnace high-voltage breakdown system and method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110683547A CN110683547A (en) | 2020-01-14 |
| CN110683547B true CN110683547B (en) | 2023-12-26 |
Family
ID=69117420
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911127195.5A Active CN110683547B (en) | 2019-11-18 | 2019-11-18 | 72-pair rod reduction furnace high-voltage breakdown system and method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110683547B (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009126773A (en) * | 2007-11-28 | 2009-06-11 | Mitsubishi Materials Corp | Method and apparatus for manufacturing polycrystal silicon |
| CN202080899U (en) * | 2011-05-31 | 2011-12-21 | 四川新光硅业科技有限责任公司 | Silicon core holding device for polysilicon reduction furnace |
| CN102295288A (en) * | 2011-06-09 | 2011-12-28 | 重庆大全新能源有限公司 | 24-pair silicon rod polysilicon reduction furnace power supply system |
| CN103613099A (en) * | 2013-11-19 | 2014-03-05 | 新特能源股份有限公司 | Polycrystalline silicon reduction furnace power supply system with 48 pairs of rods and starting method thereof |
| US20150017349A1 (en) * | 2012-02-23 | 2015-01-15 | Shin-Etsu Chemical Co., Ltd. | Polycrystalline silicon rod manufacturing method |
| CN205419793U (en) * | 2015-12-17 | 2016-08-03 | 四川英杰电气股份有限公司 | 48 start -up system to excellent polycrystalline silicon reduction furnace |
| CN108111026A (en) * | 2017-12-22 | 2018-06-01 | 南京因泰莱电器股份有限公司 | It is a kind of to possess from the polysilicon power-supply controller of electric implementation method for opening function |
| CN110357108A (en) * | 2019-08-29 | 2019-10-22 | 新疆协鑫新能源材料科技有限公司 | A kind of 72 pairs of stick polycrystalline silicon reducing furnace AC power supply systems |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN211255272U (en) * | 2019-11-18 | 2020-08-14 | 新疆东方希望新能源有限公司 | Novel 72 to excellent reduction furnace high voltage breakdown system |
-
2019
- 2019-11-18 CN CN201911127195.5A patent/CN110683547B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009126773A (en) * | 2007-11-28 | 2009-06-11 | Mitsubishi Materials Corp | Method and apparatus for manufacturing polycrystal silicon |
| CN202080899U (en) * | 2011-05-31 | 2011-12-21 | 四川新光硅业科技有限责任公司 | Silicon core holding device for polysilicon reduction furnace |
| CN102295288A (en) * | 2011-06-09 | 2011-12-28 | 重庆大全新能源有限公司 | 24-pair silicon rod polysilicon reduction furnace power supply system |
| US20150017349A1 (en) * | 2012-02-23 | 2015-01-15 | Shin-Etsu Chemical Co., Ltd. | Polycrystalline silicon rod manufacturing method |
| CN103613099A (en) * | 2013-11-19 | 2014-03-05 | 新特能源股份有限公司 | Polycrystalline silicon reduction furnace power supply system with 48 pairs of rods and starting method thereof |
| CN205419793U (en) * | 2015-12-17 | 2016-08-03 | 四川英杰电气股份有限公司 | 48 start -up system to excellent polycrystalline silicon reduction furnace |
| CN108111026A (en) * | 2017-12-22 | 2018-06-01 | 南京因泰莱电器股份有限公司 | It is a kind of to possess from the polysilicon power-supply controller of electric implementation method for opening function |
| CN110357108A (en) * | 2019-08-29 | 2019-10-22 | 新疆协鑫新能源材料科技有限公司 | A kind of 72 pairs of stick polycrystalline silicon reducing furnace AC power supply systems |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110683547A (en) | 2020-01-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2302772A1 (en) | Inverter | |
| KR101589839B1 (en) | Electricity supply system | |
| CN109894625B (en) | Multi-wire electric explosion device | |
| CN110683547B (en) | 72-pair rod reduction furnace high-voltage breakdown system and method thereof | |
| CN211255272U (en) | Novel 72 to excellent reduction furnace high voltage breakdown system | |
| CN112636415B (en) | Multi-battery-pack parallel charging control method for single charging device | |
| CN104129788A (en) | System for starting polycrystalline silicon reduction furnace | |
| CN111383843B (en) | Electrolytic capacitor aging method and system and automatic aging machine | |
| CN106816652B (en) | Battery system and its starting control method | |
| CN205419793U (en) | 48 start -up system to excellent polycrystalline silicon reduction furnace | |
| CN111391717A (en) | Energy conversion device and method and vehicle | |
| CN106451658A (en) | Charge/discharge control circuit for forming storage battery | |
| KR20110128236A (en) | Power supply arrangement with a first power supply device and a second power supply device | |
| CN104730371B (en) | Test method, circuit, the device and system of household electrical appliance | |
| CN213069091U (en) | Relay switch device full-load test device powered by low-power supply | |
| CN110729795A (en) | Energy storage power station and battery balance control method thereof | |
| CN104003394B (en) | Polycrystalline silicon rod reduction furnace electrical system and starting method thereof | |
| CN115333382A (en) | Power supply system of integrated polycrystalline silicon reduction furnace and operation method thereof | |
| CN113543398B (en) | Device and method for improving reliability of high-power pulse xenon lamp light source | |
| CN114400989A (en) | Pulse generating circuit, pulse generating apparatus, and control method thereof | |
| CN208314155U (en) | Power battery charge-discharge test instrument | |
| CN201957327U (en) | Low-energy-spread trapezoidal radio frequency quadrupole (RFQ) accelerator | |
| CN215072207U (en) | Power supply device of parcel single-piece separation system and parcel single-piece separation system | |
| CN109728715A (en) | A kind of start-up circuit and draw-out power supply of draw-out power supply | |
| CN112531810B (en) | Equalizing device and energy storage system comprising same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |