CN110676549A - Microstrip line vertical transition structure and microwave device - Google Patents
Microstrip line vertical transition structure and microwave device Download PDFInfo
- Publication number
- CN110676549A CN110676549A CN201910841410.1A CN201910841410A CN110676549A CN 110676549 A CN110676549 A CN 110676549A CN 201910841410 A CN201910841410 A CN 201910841410A CN 110676549 A CN110676549 A CN 110676549A
- Authority
- CN
- China
- Prior art keywords
- grounding
- microstrip
- pad
- microstrip probe
- metal frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
- H01P5/082—Transitions between hollow waveguides of different shape, e.g. between a rectangular and a circular waveguide
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention is suitable for the technical field of microwave millimeter wave circuits, and provides a microstrip line vertical transition structure and a microwave device, wherein the microstrip line vertical transition structure comprises: the metal box body is provided with a transition cavity which penetrates through the upper side surface and the lower side surface; the front surface of each microstrip probe device is provided with a microstrip line and a microstrip probe; the metal box body is arranged between the two microstrip probe devices and is connected with the back of each microstrip probe device, and the position of the microstrip probe arranged on each microstrip probe device corresponds to the position of the transition cavity; the two dielectric matching blocks are respectively arranged on the front sides of the two microstrip probe devices and correspond to the positions of the transition cavities to form a short-circuit piston structure, the microstrip line vertical transition structure is simple in structure and easy to assemble, and the short-circuit piston structure is arranged so that a high-frequency, low-loss and miniaturized microwave millimeter wave vertical transition structure can be realized.
Description
Technical Field
The invention belongs to the technical field of microwave and millimeter wave circuits, and particularly relates to a microstrip line vertical transition structure and a microwave device.
Background
The microstrip vertical transition structure is an indispensable part in the microwave millimeter wave component. Various microwave and millimeter wave integrated circuits are widely used in modern wireless systems and radar systems. With the demand for miniaturization becoming higher and higher, microwave millimeter wave components are also becoming more and more widely used.
Inside the microwave millimeter wave component, the microwave signals between different cavities need to be frequently subjected to vertical transition connection, and the vertical transition connection form generally comprises a radio frequency connector, a radio frequency cable, a radio frequency insulator, a microwave transition block, a fuzz button and the like. However, the conventional vertical transition connection structure generally needs to be customized according to the size of the cavity, and then assembled with the cavity and the substrate according to the assembly temperature gradient, so that the assembly is complex; meanwhile, when the application frequency is high, the transient transmission performance of the signal is severely deteriorated, and the use is affected.
Disclosure of Invention
In view of this, embodiments of the present invention provide a microstrip line vertical transition structure and a microwave device, so as to solve the problem in the prior art that signal transition transmission performance is severely deteriorated when assembly is complex and application frequency is high.
A first aspect of an embodiment of the present invention provides a microstrip line vertical transition structure, including: the device comprises a metal box body, two microstrip probe devices and two medium matching blocks;
the metal box body is provided with a transition cavity which penetrates through the upper side surface and the lower side surface;
the front surface of each microstrip probe device is provided with a microstrip line and a microstrip probe; the metal box body is arranged between the two microstrip probe devices and is connected with the back of each microstrip probe device, and the position of the microstrip probe arranged on each microstrip probe device corresponds to the position of the transition cavity, so that a microwave signal is transited from the microstrip line arranged on one microstrip probe device to the microstrip probe and then is vertically transited to the microstrip probe on the opposite microstrip probe device in the transition cavity;
the two medium matching blocks are respectively arranged on the front sides of the two microstrip probe devices, correspond to the positions of the transition cavities and are used for forming a short-circuit piston structure.
In one embodiment, each microstrip probe device further comprises a first dielectric substrate, a front ground pad;
the front surface of the first dielectric substrate is provided with the microstrip line and the microstrip probe, and the microstrip line is connected with the microstrip probe;
the front grounding pad is arranged on the front side of the first dielectric substrate, the front grounding pad is a first metal frame, an opening is formed in the first metal frame, and the microstrip probe is arranged in the first metal frame through the opening.
In one embodiment, each microstrip probe device further comprises a back ground pad thereon;
the back grounding pad is a first metal plate and is arranged on the back of the first dielectric substrate, a window is arranged on the first metal plate, and the position of the window corresponds to the position of the first metal frame.
In one embodiment, the area inside the first metal frame is the same as the cross-sectional area of the transition cavity, and the shape of the first metal frame is consistent with the shape of the cross-section of the transition cavity;
the area of the window on the back grounding pad is the same as the area of the cross section of the transition cavity, and the shape of the window on the back grounding pad is the same as the shape of the cross section of the transition cavity.
In one embodiment, each microstrip probe device further comprises a ground via;
the first metal frame is provided with a plurality of grounding through holes, the first metal plate around the window on the back grounding pad is provided with a plurality of grounding through holes, the first dielectric substrate is provided with a plurality of grounding through holes, and the grounding through holes on the front grounding pad, the grounding through holes on the back grounding pad and the grounding through holes on the first dielectric substrate are the same in number, corresponding in position and consistent in size.
In one embodiment, each dielectric matching block comprises a second dielectric substrate and a matching block grounding pad;
the front surface or the back surface of the second medium substrate is provided with the matching block grounding pad;
the matching block grounding pad is a second metal frame, an opening is formed in the second metal frame, the opening position in the second metal frame is consistent with the opening position in the front grounding pad, the shape of the second metal frame is consistent with that of the first metal frame in the front grounding pad, and the area in the second metal frame is the same with that in the first metal frame in the front grounding pad.
In one embodiment, each dielectric matching block is further provided with a matching block top layer bonding pad;
the matching block top layer bonding pad is arranged on the back surface or the front surface of the second dielectric substrate corresponding to the matching block grounding bonding pad;
the top-layer bonding pad of the matching block is a second metal plate, and the second metal plate and the cross section of the medium matching block have the same shape and size;
and the vertical distance from the top layer bonding pad of the matching block to the microstrip probe on the closest microstrip probe device is a quarter of the wavelength short-circuit surface.
In one embodiment, each dielectric matching block is further provided with a grounding through hole;
a plurality of grounding through holes are formed in the second metal frame, the second metal plate and the second dielectric substrate, and the number of the grounding through holes in the second metal frame, the number of the grounding through holes in the second metal plate and the number of the grounding through holes in the second dielectric substrate are the same, and the grounding through holes in the second metal frame, the grounding through holes in the second metal plate and the grounding through holes in the second dielectric substrate are corresponding in position and are consistent in size.
In one embodiment, the two microstrip probe devices are fixed on the metal box body in a welding or sticking mode, and the windowing position of the back grounding pad corresponds to the position of the transition cavity on the metal box body;
the two dielectric matching blocks are respectively welded on the two microstrip probe devices, the matching block grounding pad corresponds to and contacts with the front side grounding pad, and the grounding through hole on the matching block grounding pad corresponds to the grounding through hole on the front side grounding pad.
A second aspect of an embodiment of the present invention provides a microwave device, including: any one of the above embodiments provides a microwave vertical transition connection structure.
Compared with the prior art, the embodiment of the invention has the following beneficial effects: the transition cavity is arranged in the middle of the microstrip probe device, so that the microstrip probe is arranged in the range of the transition cavity, and a microwave signal is transited from a microstrip line arranged on one microstrip probe device to the microstrip probe and then is vertically transited to the microstrip probe on the opposite microstrip probe device in the transition cavity; the dielectric matching blocks are arranged on the outer sides of the two microstrip probe devices and used for forming a short-circuit piston structure, the microstrip line vertical transition structure is simple in structure and easy to assemble, and the short-circuit piston structure is arranged, so that the microwave millimeter wave vertical transition structure with high frequency, low loss and miniaturization can be realized.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a schematic diagram of a vertical transition structure of a microstrip line according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a transition chamber structure provided in an embodiment of the present invention;
FIG. 3 is a schematic diagram of a microstrip probe apparatus provided in an embodiment of the present invention;
fig. 4 is a schematic cross-sectional view of a vertical transition structure of a microstrip line according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a media matching block structure provided in an embodiment of the present invention;
fig. 6 is a schematic diagram of another microstrip line vertical transition structure provided in the embodiment of the present invention.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
In order to explain the technical means of the present invention, the following description will be given by way of specific examples.
Fig. 1 is a schematic view of a vertical transition structure of a microstrip line according to an embodiment of the present invention, which is described in detail as follows.
As shown in fig. 1, a microstrip line vertical transition structure may include: the device comprises a metal box body 1, two microstrip probe devices 2 and two medium matching blocks 3;
the metal box body 1 is provided with a transition cavity 11 which penetrates through the upper side surface and the lower side surface;
the front surface of each microstrip probe device 2 is provided with a microstrip line and a microstrip probe; the metal box body 1 is arranged between the two microstrip probe devices 2 and connected with the back of each microstrip probe device 2, and the position of the microstrip probe arranged on each microstrip probe device 2 corresponds to the position of the transition cavity 11, so that a microwave signal is transited from the microstrip line arranged on one microstrip probe device 2 to the microstrip probe and then is vertically transited to the microstrip probe on the opposite microstrip probe device 2 in the transition cavity 11;
the two medium matching blocks 3 are respectively arranged on the front sides of the two microstrip probe devices 2, correspond to the positions of the transition cavities and are used for forming a short-circuit piston structure.
According to the microstrip line vertical transition structure, the transition cavity is arranged in the middle of the microstrip probe device, so that the microstrip probe is arranged in the range of the transition cavity, microwave signals are transited from the microstrip line arranged on one microstrip probe device to the microstrip probe, and then the vertical transition is carried out in the transition cavity to the microstrip probe on the opposite microstrip probe device; the dielectric matching blocks are arranged on the outer sides of the two microstrip probe devices and used for forming a short-circuit piston structure, the microstrip line vertical transition structure is simple in structure and easy to assemble, and the short-circuit piston structure is arranged, so that the microwave millimeter wave vertical transition structure with high frequency, low loss and miniaturization can be realized.
The last transition cavity that has a through downside that has of opening of metal carton body, as the transition cavity structure sketch map shown in fig. 2, the transition cavity can be opened in the preset position of metal carton body, and the transition cavity can be the cuboid structure, and the cross section is the rectangle, and the transition cavity still can be other structures, for example the square etc. does not restrict the structure of transition cavity in this application.
Optionally, as shown in fig. 3, each microstrip probe apparatus 2 further includes a first dielectric substrate 21 and a front ground pad 22, and as shown in fig. 3, each microstrip probe apparatus 2 further includes a microstrip line 23 and a microstrip probe 24.
The microstrip line 23 and the microstrip probe 24 are arranged on the front surface of the first dielectric substrate 21, and the microstrip line 23 is connected with the microstrip probe 24;
the front ground pad 22 is disposed on the front surface of the first dielectric substrate 21, the front ground pad 22 is a first metal frame, an opening is disposed on the first metal frame, and the microstrip probe 25 is disposed in the first metal frame through the opening, so that a signal transmitted by the microstrip probe is constrained within a size range of the first metal frame. Alternatively, the front side ground pad 22 may be soldered to the front side of the first dielectric substrate 21.
Alternatively, the shape of the first metal frame may be circular, rectangular, square, pentagonal, or other shapes, and in this embodiment, a first metal frame is rectangular for example.
Optionally, as shown in fig. 3, each microstrip probe apparatus 2 further includes a back ground pad 25 thereon.
The back ground pad 25 is a first metal plate disposed on the back of the first dielectric substrate 21, and the first metal plate is provided with a window, i.e., a metal at the window opening position is removed from the first metal plate, and the window opening position corresponds to the position of the first metal frame. Alternatively, the back ground pad 25 may be soldered to the back surface of the first dielectric substrate 21.
Optionally, as shown in fig. 3, the area inside the first metal frame is the same as the cross-sectional area of the transition cavity 11, and the shape of the first metal frame is consistent with the shape of the cross-section of the transition cavity 11; for example, if the transition cavity is rectangular, the first metal frame is also rectangular, and the size of the cross section of the transition cavity is the same as that of the first metal frame.
The area of the window on the back ground pad 25 is the same as the cross-sectional area of the transition cavity 11, and the shape of the window on the back ground pad 25 is the same as the cross-sectional shape of the transition cavity 11. For example, the transition cavity is rectangular, the window on the back ground pad 25 is also rectangular, and the size of the cross section of the transition cavity is the same as that of the window on the back ground pad 25, so that the microwave signal can be transmitted from the windowed area.
Optionally, each microstrip probe apparatus 2 further includes a ground via 26 for communication.
Be provided with a plurality of ground connection through-holes 26 on the first metal frame, be provided with a plurality of ground connection through-holes 26 on the first metal sheet around windowing on the back ground pad 25, set up a plurality of ground connection through-holes on the first medium base plate 21, and ground connection through-hole 26 on the front ground pad 22 ground connection through-hole 26 on the back ground pad 25 and ground connection through-hole's on the first medium base plate 21 quantity is the same, the position corresponds and the size is unanimous, and front ground pad 22, back ground pad 26 and the ground effect is realized through ground connection through-hole to first medium base plate like this.
Optionally, the front ground pad 22, the back ground pad 25 and the ground via 26 on the first dielectric substrate 21 form a waveguide-like cavity structure, so that signals transmitted by the microstrip probe are constrained within the size range of the waveguide-like cavity structure.
As shown in fig. 4, the two microstrip probe devices are fixed on the metal box body by welding or adhering, and it should be noted that the positions of the front ground pad and the back ground pad on the two microstrip probe devices correspond to the positions of the transition cavity on the metal box body.
Alternatively, as shown in the schematic diagram of fig. 5, each dielectric matching block 3 includes a second dielectric substrate 31 and a matching block ground pad 32.
The matching block ground pad 31 is disposed on the front surface or the back surface of the second dielectric substrate 31, and as shown in fig. 5, the shape of the second dielectric substrate 31 is consistent with the shape of the region formed on the periphery of the matching block ground pad. Alternatively, the mating block ground pad 31 may be soldered to the front or back surface of the second dielectric substrate 31.
As shown in fig. 5, the matching block ground pad 31 is a second metal frame, an opening is formed on the second metal frame, the position of the opening on the second metal frame is identical to the position of the opening on the front ground pad 22, the shape of the second metal frame is identical to the shape of the first metal frame on the front ground pad 22, and the area in the second metal frame is identical to the area in the first metal frame on the front ground pad 22.
Optionally, as shown in fig. 5, a matching block top layer pad 33 is further disposed on each dielectric matching block 3.
The matching block top pad 33 is disposed on the back or front surface of the second dielectric substrate 31 corresponding to the matching block ground pad 31. It will be appreciated that when the matching block ground pads 32 are disposed on the front side of the second dielectric substrate 31, then the matching block top layer pads 33 are disposed on the back side of the second dielectric substrate 31; when the matching block ground pad 31 is disposed on the back surface of the second dielectric substrate 31, the matching block top pad 33 is disposed on the front surface of the second dielectric substrate 31. Alternatively, the matching block top pad 33 may be soldered on the back or front surface of the second dielectric substrate 31 corresponding to the matching block ground pad 32.
The top pad 33 of the matching block is a second metal plate, and the second metal plate has the same shape and size as the cross section of the dielectric matching block, that is, the second metal plate is the same metal plate as the cross section of the dielectric matching block.
As shown in fig. 6, the vertical distance from the top pad 33 of the matching block to the microstrip probe on the nearest microstrip probe arrangement 2 is a quarter of the wavelength short-circuit plane, i.e. the vertical distance from the top pad 33 of the matching block to the microstrip probe on the nearest microstrip probe arrangement 2 is around λ/4, where λ represents a wavelength length. The top pad 33 of the matching block serves as a short-circuit surface, the distance between the top pad and the microstrip probe is kept near the short-circuit surface with the quarter wavelength as much as possible, the function of a short-circuit piston is achieved, the stripline probe can be positioned at the position with the strongest electric field in the waveguide, and transition loss is reduced.
Optionally, as shown in fig. 5, each dielectric matching block 3 is further provided with a ground via 34 to achieve the effect of communication.
A plurality of ground vias 34 are disposed on the second metal frame, the second metal plate, and the second dielectric substrate 31, and the number, the position, and the size of the ground vias 34 on the second metal frame, the number, the position, and the size of the ground vias 34 on the second metal plate, and the number, the position, and the size of the ground vias 34 on the second dielectric substrate 31 are the same.
The dielectric matching block consists of a second dielectric substrate, a matching block grounding bonding pad, a matching block top bonding pad and a grounding through hole, and a short circuit piston structure is formed by the two dielectric matching blocks. The short-circuit piston function with the best transition performance can be realized by optimizing the distance between the short-circuit surface and the microstrip probe and the size of the medium matching block. The matching block grounding pad is installed on the medium substrate through welding and is connected with the matching block top pad through the grounding through hole, so that the matching block top pad realizes a grounding effect, the matching block top pad can realize a short-circuit surface effect, and the distance between the matching block grounding pad and the microstrip probe is near a quarter wavelength. Meanwhile, the matching block grounding pad, the front grounding pad and the grounding through hole jointly realize the shielding effect of the waveguide wall. The height and the volume of the medium matching block and the medium material are optimally selected, and the function of a short-circuit piston is realized. By the optimized design of the dielectric matching block part, a microwave and millimeter wave vertical transition structure with high frequency, low loss and miniaturization is realized.
Optionally, as shown in fig. 6, the microstrip line vertical transition structure includes: the two microstrip probe devices 2 are fixed on the metal box body 1 in a welding or sticking mode, and the windowing position of the back grounding pad corresponds to the position of the transition cavity on the metal box body;
the two dielectric matching blocks 3 are respectively welded on the two microstrip probe devices 1, the matching block grounding pad corresponds to and contacts with the front side grounding pad, and the grounding through hole on the matching block grounding pad corresponds to the grounding through hole on the front side grounding pad. The ground vias on the microstrip probe device 2 and the dielectric matching block 3 correspond in position and size.
As shown in fig. 6, after all the parts are assembled, a microstrip vertical transition structure can be realized. The microwave signal is transited to the microstrip probe through the microstrip line, and then the microstrip probe vertically transmits the microwave signal to the microstrip probe on the other side through the transition cavity, so that the vertical transition transmission of the microwave signal is realized. And then the signals are matched and adjusted through the medium matching blocks, so that the transmission loss is minimum.
The microstrip line vertical transition structure provided by the embodiment is simulated, and the simulation result shows that the transition loss is less than 0.5dB within 40GHz of a Ka wave band, so that the microstrip line vertical transition structure has good practical potential for microwave signal transmission in component products.
According to the microstrip line vertical transition structure, the combination of the metal box body, the two microstrip probe devices and the two medium matching blocks enables a wave signal to be transited to the microstrip probe through the microstrip line, and then the microstrip probe vertically transmits the microwave signal to the microstrip probe on the other side through the transition cavity, so that the vertical transition transmission of the microwave signal is realized. The microstrip line vertical transition structure is simple in structure and easy to assemble, and the short circuit piston structure is arranged, so that the microwave millimeter wave vertical transition structure with high frequency, low loss and miniaturization can be realized.
The embodiment of the present invention further provides a microwave device, which includes the microstrip line vertical transition structure described in any of the above embodiments, and has the beneficial effects brought by the microstrip line vertical transition structure described in any of the above embodiments.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (10)
1. A microstrip line vertical transition structure, comprising: the device comprises a metal box body, two microstrip probe devices and two medium matching blocks;
the metal box body is provided with a transition cavity which penetrates through the upper side surface and the lower side surface;
the front surface of each microstrip probe device is provided with a microstrip line and a microstrip probe; the metal box body is arranged between the two microstrip probe devices and is connected with the back of each microstrip probe device, and the position of the microstrip probe arranged on each microstrip probe device corresponds to the position of the transition cavity, so that a microwave signal is transited from the microstrip line arranged on one microstrip probe device to the microstrip probe and then is vertically transited to the microstrip probe on the opposite microstrip probe device in the transition cavity;
the two medium matching blocks are respectively arranged on the front sides of the two microstrip probe devices, correspond to the positions of the transition cavities and are used for forming a short-circuit piston structure.
2. The microstrip line vertical transition structure of claim 1 wherein each microstrip probe means further comprises a first dielectric substrate, a front ground pad;
the front surface of the first dielectric substrate is provided with the microstrip line and the microstrip probe, and the microstrip line is connected with the microstrip probe;
the front grounding pad is arranged on the front side of the first dielectric substrate, the front grounding pad is a first metal frame, an opening is formed in the first metal frame, and the microstrip probe is arranged in the first metal frame through the opening.
3. The microstrip line vertical transition structure of claim 2 wherein each microstrip probe means further comprises a back ground pad thereon;
the back grounding pad is a first metal plate and is arranged on the back of the first dielectric substrate, a window is arranged on the first metal plate, and the position of the window corresponds to the position of the first metal frame.
4. The microstrip line vertical transition structure of claim 3, wherein the area inside the first metal frame is the same as the cross-sectional area of the transition cavity, and the shape of the first metal frame is the same as the shape of the cross-section of the transition cavity;
the area of the window on the back grounding pad is the same as the area of the cross section of the transition cavity, and the shape of the window on the back grounding pad is the same as the shape of the cross section of the transition cavity.
5. The microstrip line vertical transition structure of claim 3 wherein each microstrip probe means further comprises a ground via;
the first metal frame is provided with a plurality of grounding through holes, the first metal plate around the window on the back grounding pad is provided with a plurality of grounding through holes, the first dielectric substrate is provided with a plurality of grounding through holes, and the grounding through holes on the front grounding pad, the grounding through holes on the back grounding pad and the grounding through holes on the first dielectric substrate are the same in number, corresponding in position and consistent in size.
6. The microstrip line vertical transition structure of claim 3 wherein each dielectric matching block includes a second dielectric substrate and a matching block ground pad thereon;
the front surface or the back surface of the second medium substrate is provided with the matching block grounding pad;
the matching block grounding pad is a second metal frame, an opening is formed in the second metal frame, the opening position in the second metal frame is consistent with the opening position in the front grounding pad, the shape of the second metal frame is consistent with that of the first metal frame in the front grounding pad, and the area in the second metal frame is the same with that in the first metal frame in the front grounding pad.
7. The microstrip line vertical transition structure of claim 6 wherein each dielectric matching block is further provided with a matching block top layer pad;
the matching block top layer bonding pad is arranged on the back surface or the front surface of the second dielectric substrate corresponding to the matching block grounding bonding pad;
the top-layer bonding pad of the matching block is a second metal plate, and the second metal plate and the cross section of the medium matching block have the same shape and size;
and the vertical distance from the top layer bonding pad of the matching block to the microstrip probe on the closest microstrip probe device is a quarter of the wavelength short-circuit surface.
8. The microstrip line vertical transition structure of claim 7, wherein each dielectric matching block is further provided with a ground via;
a plurality of grounding through holes are formed in the second metal frame, the second metal plate and the second dielectric substrate, and the number of the grounding through holes in the second metal frame, the number of the grounding through holes in the second metal plate and the number of the grounding through holes in the second dielectric substrate are the same, and the grounding through holes in the second metal frame, the grounding through holes in the second metal plate and the grounding through holes in the second dielectric substrate are corresponding in position and are consistent in size.
9. The microstrip vertical transition structure of claim 8, wherein,
the two microstrip probe devices are fixed on the metal box body in a welding or sticking mode, and the windowing position of the back grounding pad corresponds to the position of the transition cavity on the metal box body;
the two dielectric matching blocks are respectively welded on the two microstrip probe devices, the matching block grounding pad corresponds to and contacts with the front side grounding pad, and the grounding through hole on the matching block grounding pad corresponds to the grounding through hole on the front side grounding pad.
10. A microwave device comprising a microwave vertical transition junction structure according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910841410.1A CN110676549A (en) | 2019-09-06 | 2019-09-06 | Microstrip line vertical transition structure and microwave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910841410.1A CN110676549A (en) | 2019-09-06 | 2019-09-06 | Microstrip line vertical transition structure and microwave device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110676549A true CN110676549A (en) | 2020-01-10 |
Family
ID=69076089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910841410.1A Pending CN110676549A (en) | 2019-09-06 | 2019-09-06 | Microstrip line vertical transition structure and microwave device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110676549A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112886167A (en) * | 2021-01-06 | 2021-06-01 | 北京邮电大学 | Microstrip line vertical transition structure based on electromagnetic coupling and microwave integrated system |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7486156B2 (en) * | 2005-10-19 | 2009-02-03 | Electronics And Telecommunications Research Institute | Millimeter-wave band broadband microstrip-waveguide transition apparatus having a main patch and a parasitic patch on different dielectric substrates |
| CN106342353B (en) * | 2010-09-14 | 2014-05-14 | 中国航空工业集团公司雷华电子技术研究所 | A kind of microstrip line-coaxial line vertical transition structure |
| CN109216847A (en) * | 2018-09-21 | 2019-01-15 | 成都博芯联科科技有限公司 | A kind of micro-strip vertical transition structure |
-
2019
- 2019-09-06 CN CN201910841410.1A patent/CN110676549A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7486156B2 (en) * | 2005-10-19 | 2009-02-03 | Electronics And Telecommunications Research Institute | Millimeter-wave band broadband microstrip-waveguide transition apparatus having a main patch and a parasitic patch on different dielectric substrates |
| CN106342353B (en) * | 2010-09-14 | 2014-05-14 | 中国航空工业集团公司雷华电子技术研究所 | A kind of microstrip line-coaxial line vertical transition structure |
| CN109216847A (en) * | 2018-09-21 | 2019-01-15 | 成都博芯联科科技有限公司 | A kind of micro-strip vertical transition structure |
Non-Patent Citations (3)
| Title |
|---|
| ERIC S. LI 等: "Bandwidth enhancement of broad-band cavity-coupled microstrip vertical transitions", 《2008 IEEE ANTENNAS AND PROPAGATION SOCIETY INTERNATIONAL SYMPOSIUM》 * |
| KAZUYUKI SEO: "Planar Microstrip-To-Waveguide Transition in Millimeter-Wave Band", 《ADVANCEMENT IN MICROSTRIP ANTENNAS WITH RECENT APPLICATIONS》 * |
| 张国忠 等: "一种微带线到带状线宽带垂直耦合过渡结构", 《电子测量技术》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112886167A (en) * | 2021-01-06 | 2021-06-01 | 北京邮电大学 | Microstrip line vertical transition structure based on electromagnetic coupling and microwave integrated system |
| CN112886167B (en) * | 2021-01-06 | 2021-12-17 | 北京邮电大学 | Microstrip line vertical transition structure based on electromagnetic coupling and microwave integrated system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110707406B (en) | Microstrip line vertical transition structure and microwave device | |
| US6639484B2 (en) | Planar mode converter used in printed microwave integrated circuits | |
| US8089327B2 (en) | Waveguide to plural microstrip transition | |
| KR20190065293A (en) | A packaging structure comprising at least one transition portion forming a contactless interface | |
| US10234479B2 (en) | Resonance suppression structure of a wideband near-field magnetic probe and a construction method thereof | |
| IL132960A (en) | Microwave transmission device | |
| CN113270705B (en) | Microstrip line probe conversion structure of millimeter wave transceiver antenna | |
| US10522894B2 (en) | Coaxial line to microstrip line conversion circuit, where the conversion circuit comprises a waveguide in which the coaxial line and the microstrip line are disposed | |
| CN110676550B (en) | Microstrip line vertical transition structure and microwave device | |
| CN107394329A (en) | Ka wave band micro-strip waveguide transitions circuits | |
| CN110707405B (en) | Microstrip line vertical transition structure and microwave device | |
| CN111628262B (en) | Ka-band double-semicircular-ring magnetic coupling power divider | |
| CN108306084B (en) | Three-hole grounding miniaturized quasi-SIW circulator | |
| CN104331535A (en) | V waveband microstrip probe type waveguide microstrip switching circuit and parameter design method | |
| CN102610880A (en) | Plane miniaturization communication band-pass filter with broadband external inhibition characteristic | |
| CN107275735B (en) | Novel coaxial microstrip converter | |
| CN110676549A (en) | Microstrip line vertical transition structure and microwave device | |
| CN117219999A (en) | Microstrip-coaxial transition device based on suspension microstrip line | |
| Wei et al. | AK/Ka-band reconfigurable substrate integrated coaxial line to waveguide transition technology | |
| WO2020014891A1 (en) | Balun and method for manufacturing the same | |
| CN202564510U (en) | Low loss radiofrequency plane integration band-pass filter | |
| Jakob et al. | WR12 to planar transmission line transition on organic substrate | |
| KR102134332B1 (en) | Adapter connecting waveguide and coaxial cable with open type combination structure | |
| CN110890613B (en) | Ultra-wideband waveguide radial power combiner | |
| US7535316B2 (en) | Self-supported strip line coupler |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200110 |